CN220652573U - Semiconductor laser - Google Patents

Abstract

The application discloses a semiconductor laser belongs to laser technical field. The semiconductor laser comprises a base, a heat sink, a first laser unit and a second laser unit, wherein the heat sink is connected to the middle area of the base and comprises a first heat sink and a second heat sink which are in a ladder shape, and the first heat sink and the second heat sink are opposite at intervals; the first laser unit is provided with a plurality of first single-tube lasers, the second laser unit is provided with a plurality of second single-tube lasers corresponding to the first single-tube lasers, the plurality of first single-tube lasers and the plurality of second single-tube lasers are respectively arranged on steps of the first heat sink and the second heat sink at intervals, and the light emitting direction of the first single-tube lasers is opposite to the light emitting direction of the second single-tube lasers. The semiconductor laser that this application provided, single tube laser set up on the step of heat sink, and the luminous direction of double single tube laser is relative, and semiconductor laser's length and width all reduce, are favorable to semiconductor laser's miniaturization and lightweight.

Description

Semiconductor laser

Technical Field

The utility model relates to the technical field of lasers, in particular to a semiconductor laser.

Background

The existing high-power semiconductor laser integrated by double-row single-tube lasers adopts two rows of single-tube lasers to be arranged on two opposite sides of a heat sink, or the two rows of single-tube lasers are arranged back to back in the middle of the heat sink, and the arranged lasers have double transverse dimensions relative to the single-row single-tube lasers, so that the size of the laser is increased. In addition, the light beams emitted by the traditional double-row arranged opposite single-tube lasers are easy to interfere, and one side of the light beams irradiates the other side of the laser chip, so that the lasers are easy to be unstable or lose efficacy. In order to prevent the interference of the light beams, a part of products are provided with baffles between the oppositely arranged single-tube lasers, which further increases the volume of the lasers and is not beneficial to the miniaturization of the lasers. Therefore, how to reduce the volume of the double-row single-tube laser is a technical problem to be solved.

Disclosure of Invention

The application provides a semiconductor laser which can solve the technical problem of large volume of double-row single-tube lasers.

In order to solve the technical problems, the application provides a semiconductor laser, which comprises a base, a heat sink, a first laser unit and a second laser unit, wherein the heat sink is connected to the middle area of the base and comprises a first heat sink and a second heat sink which are in a ladder shape, and the first heat sink is opposite to the second heat sink at intervals; the first laser unit is provided with a plurality of first single-tube lasers, the second laser unit is provided with a plurality of second single-tube lasers corresponding to the first single-tube lasers, the plurality of first single-tube lasers and the plurality of second single-tube lasers are respectively arranged on steps of the first heat sink and the second heat sink at intervals, the light emitting direction of the first single-tube lasers is opposite to the light emitting direction of the second single-tube lasers, light beams emitted by each first single-tube laser can be emitted through gaps between two adjacent arranged second single-tube lasers on opposite sides, and light beams emitted by each second single-tube laser can be emitted through gaps between two adjacent arranged first single-tube lasers on opposite sides.

According to the semiconductor laser provided by the application, the single-tube laser is arranged on the step of the heat sink, interference between adjacent light beams is not easy to occur, and the double-row arrangement can reduce the length of the semiconductor laser; the light-emitting direction of the first single-tube laser is opposite to the light-emitting direction of the second single-tube laser, and the light beams emitted by the single-tube lasers can be emitted from the gaps of the two adjacent single-tube lasers which are oppositely arranged, so that the length of the single-tube lasers is used as a part of a slow axis collimation propagation path of the light beams, the transverse width of the double-row single-tube lasers can be reduced, and the semiconductor lasers are reduced in length and width, so that the miniaturization and the light weight of the semiconductor lasers are facilitated.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of an embodiment of a semiconductor laser provided herein;

fig. 2 is a schematic diagram illustrating a cross-sectional positional relationship between a first heat sink and a second heat sink according to an embodiment of the present disclosure.

Detailed Description

The utility model is described in further detail below with reference to the drawings and examples. It is specifically noted that the following examples are only for illustrating the present utility model, but do not limit the scope of the present utility model. Likewise, the following examples are only some, but not all, of the examples of the present utility model, and all other examples, which a person of ordinary skill in the art would obtain without making any inventive effort, are within the scope of the present utility model.

In the description of the present utility model, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. The terms "first," "second," "third," and the like in the embodiments of the present application are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", and "a third" may explicitly or implicitly include at least one such feature. All directional indications (such as up, down, left, right, front, back … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a particular gesture (as shown in the drawings), and if the particular gesture changes, the directional indication changes accordingly. The terms "comprising" and "having" and any variations thereof in the embodiments of the present application are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may alternatively include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the utility model. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

The application provides a semiconductor laser. Referring to fig. 1 and 2, a semiconductor laser 100 may include a base 10, a heat sink 20, a first laser unit 30, a second laser unit 40, and a beam combiner 50.

The base 10 may be made of a light metal such as aluminum, magnesium, or titanium, or a light nonmetal such as PEEK (polyetheretherketone) or POM (polyoxymethylene) to reduce the weight of the semiconductor laser 100.

The heat sink 20 is made of copper or aluminum with better heat conduction performance, and the heat sink 20 is used for heat dissipation of the heating elements of the first laser unit 30 and the second laser unit 40. The bottom of the heat sink 20 may be provided with a water channel for heat exchange, which may be macro channels with large apertures or micro channels with fins. A heat sink 20 is attached to a central region of the base 10. The heat sink 20 and the base 10 may be separately disposed, and the heat sink 20 and the base 10 may be integrally formed of the same heat dissipating material. The heat sink 20 includes a first heat sink 21 and a second heat sink 22 having a stepped shape, and the first heat sink 21 is spaced apart from the second heat sink 22.

The first laser unit 30 is provided with a plurality of first single-tube lasers 31, the second laser unit 40 is provided with a plurality of second single-tube lasers 41 corresponding to the first single-tube lasers 31, and the plurality of first single-tube lasers 31 and the plurality of second single-tube lasers 41 are respectively arranged on steps of the first heat sink 21 and the second heat sink 22 at intervals. The single-tube lasers are arranged on the steps of the double-row heat sinks, and as the height difference exists between the two adjacent steps, the length of the hypotenuse of the right triangle is larger than that of the right angle side, and the distance between the two adjacent single-tube lasers is larger than that of orthographic projection on the horizontal plane, that is, the distance between light beams emitted by the two adjacent single-tube lasers is increased relative to the plane arrangement, so that interference between the adjacent light beams is not easy to occur. The single-tube laser is disposed on the steps of the double-row heat sinks, and the size thereof in the length direction and the size thereof in the height direction are smaller with respect to the laser in which the single-row steps are distributed with equal power, so that the length and the height of the semiconductor laser 100 can be reduced. The length direction may be the X direction in fig. 1, and the height direction may be the Z direction in fig. 2.

The light emitting direction of the first single-tube lasers 31 is opposite to the light emitting direction of the second single-tube lasers 41, and the light beam emitted by each first single-tube laser 31 can be emitted through a gap between two adjacent arranged second single-tube lasers 41 on opposite sides, and the light beam emitted by each second single-tube laser 41 can be emitted through a gap between two adjacent arranged first single-tube lasers 31 on opposite sides. So arranged, each first single-tube laser 31 can emit with a gap between two adjacently arranged second single-tube lasers 41 correspondingly arranged on opposite sides, and the length of the second single-tube laser 41 is taken as a part of the propagation path of the light beam emitted by the first single-tube laser 31; accordingly, the length of the first single-tube laser 31 is taken as a part of the propagation path of the light beam emitted by the second single-tube laser 41, so that the lateral width of the double-row single-tube laser can be reduced, and the reduction value can be the sum of the lengths of the first single-tube laser 31 and the second single-tube laser 41 at the maximum. The width direction may be the Y direction in fig. 1. By the above arrangement, the length, height and width of the semiconductor laser 100 are reduced, and the volume of the semiconductor laser 100 is reduced accordingly, which is advantageous for miniaturization and weight saving of the semiconductor laser 100.

The steps of the same level, which are correspondingly arranged on the first heat sink 21 and the second heat sink 22, are equal in vertical height, so that light beams emitted by the single-tube laser can pass through the opposite step surfaces without shielding. The vertical direction may be the Z direction in fig. 2. Alternatively, the height differences between the steps of the first heat sink 21 and the second heat sink 22 may be equal, i.e. the height difference between the step surfaces of the first heat sink 21 and the second heat sink 22 is a fixed value, so as to facilitate the processing of the heat sinks.

The steps of the same level, which are correspondingly arranged on the first heat sink 21 and the second heat sink 22, are arranged in a staggered manner on the horizontal plane, so that light beams emitted by the single-tube lasers can pass through the vertical surfaces of the opposite steps and the single-tube lasers which are oppositely arranged in a non-shielding manner. The horizontal plane may be the XOY plane in fig. 1. The vertical surface of the heat sink step has a certain height, the vertical surface is separated between two adjacent beams, interference between the beams in the same row can be prevented, and the staggered double arrangement can prevent interference between the beams in opposite rows. Alternatively, the outer edge of the single-tube laser may be attached to the outer edge of the step to reduce the size of the semiconductor laser 100 in the length direction.

The first laser unit 30 further includes a plurality of first fast axis collimating lenses 32 and first slow axis collimating lenses 33 disposed corresponding to the first single-tube lasers 31, and correspondingly, the second laser unit 40 may further include a plurality of second fast axis collimating lenses 42 and second slow axis collimating lenses 43 disposed corresponding to the second single-tube lasers 41. The first fast axis collimating lens 32 and the second fast axis collimating lens 42 are respectively disposed at front ends of the light emitting areas of the first single-tube laser 31 and the second single-tube laser 41, and the first fast axis collimating lens 32 and the second fast axis collimating lens 42 are respectively used for fast axis collimation of the light beams emitted by the first single-tube laser 31 and the second single-tube laser 41, so as to improve fast axis quality of the light beams.

If the interval between the first single-tube laser 31 and the second single-tube laser 41 is too small, the jig adjustment setting space between the first fast-axis collimator lens 32 and the second fast-axis collimator lens 42 is affected. In one embodiment, to further reduce the width of the semiconductor laser 100, the first and second fast axis collimating lenses 32 and 42 are optically tuned to be fixed to the first and second single-tube lasers 31 and 41, respectively, before the heat sink 20 is packaged. The first fast axis collimating lens 32 and the second fast axis collimating lens 42 can be respectively and fixedly arranged on the first single-tube laser 31 and the second single-tube laser 41 in a pre-adjusted and adhered mode by using UV glue, and then the first single-tube laser 31 and the second single-tube laser 41 are packaged on the heat sink 20, so that the problem that the fast axis collimating process is inconvenient due to the fact that the space between the first single-tube laser 31 and the second single-tube laser 41 is too small is avoided. Low temperature soldering may be used during packaging to avoid the higher temperature affecting the stability of the adhesive and shifting the first and second fast axis collimating lenses 32, 42.

The first slow axis collimating lens 33 and the second slow axis collimating lens 43 are disposed on opposite sides of the base 10. The first slow axis collimating lens 33 and the second slow axis collimating lens 43 are respectively used for the slow axis collimation of the light beam emitted by the first single-tube laser 31 and the second single-tube laser 41, so as to improve the slow axis quality of the light beam. It will be appreciated that the base 10 is also stepped at the location where the slow axis collimator lens is mounted so that it can receive the beam from the single tube laser.

The light beam emitted by each first single-tube laser 31 can sequentially pass through the first fast axis collimating lens 32, the gap between two adjacent second single-tube lasers 41 arranged correspondingly on the opposite side, and the first slow axis collimating lens 33 and then exit; accordingly, the light beam emitted by each second single-tube laser 41 may sequentially pass through the second fast-axis collimating lens 42, the gap between two adjacent first single-tube lasers 31 disposed on opposite sides, and the second slow-axis collimating lens 43, and then exit.

The number of the first single-tube lasers 31 and the second single-tube lasers 41 may be equal or different from each other, and the number of the first single-tube lasers 31 and the second single-tube lasers 41 may be determined according to actual needs. In one embodiment, the first single-tube lasers 31 and the second single-tube lasers 41 are respectively arranged in a straight line, and the light beams emitted by the first single-tube lasers 31 and the second single-tube lasers 41 are parallel to each other, so as to avoid cross interference between the light beams in each column. The plurality of first single-tube lasers 31 are connected in series, and the connection mode between the positive and negative electrodes of two adjacent first single-tube lasers 31 can be an aluminum wire, a gold wire, a copper wire, and the like, and the laser beams on the opposite sides can pass through without shielding when the connecting wire arc height satisfies the requirements. The connection between the plurality of second single-tube lasers 41 is the same as the connection between the plurality of first single-tube lasers 31.

The arrangement pitch between the plurality of first single-tube lasers 31 and the arrangement pitch between the plurality of second single-tube lasers 41 may be equal or may be unequal, and may be determined according to the use requirements. In an embodiment, the distance between two adjacent first single-tube lasers 31 is greater than or equal to the maximum width of the tail of the first single-tube laser 31, and the distance between two adjacent second single-tube lasers 41 is greater than or equal to the maximum width of the tail of the second single-tube laser 41, so that all the laser beams can pass through without shielding.

To facilitate beam combining of the laser beams, in an embodiment, the first laser unit 30 further comprises a first mirror 34 and a first anti-reflection assembly 35. The first mirrors 34 are disposed corresponding to the first slow axis collimating lenses 33, the light beams reflected by the first mirrors 34 are parallel to each other, and the first anti-reflection component 35 is disposed in the light beam emitting direction of the first mirrors 34, and is configured to receive and emit a plurality of parallel light beams reflected by the first mirrors 34. The first anti-reflection assembly 35 may include a wave plate and a polarizer, and the first anti-reflection assembly 35 may change the propagation direction of the light beam from each first mirror 34 so as to combine the light beams and may also anti-reflect the reflected light beam. Correspondingly, the second laser unit 40 further includes a second reflecting mirror 44 and a second anti-reflection component 45, where the second reflecting mirrors 44 are disposed corresponding to the second slow axis collimating lenses 43, the light beams reflected by the second reflecting mirrors 44 are parallel to each other, and the second anti-reflection component 45 is disposed in the light beam emitting direction of the second reflecting mirror 44, and is configured to receive and emit a plurality of parallel light beams reflected by the second reflecting mirrors 44. The second anti-reflection assembly 45 may include a wave plate and a polarizer, and the second anti-reflection assembly 45 may change a propagation direction of the light beam from each second mirror 44 so as to combine the light beams and may anti-reflect the reflected light beam. The first plurality of mirrors 34 and the second plurality of mirrors 44 are disposed on opposite sides of the base 10. It will be appreciated that the base 10 is also stepped at the mirror mount in order to allow the mirror to receive the beam from the single tube laser. Alternatively, the mirror and the corresponding slow axis collimating lens are mounted on the same step surface of the base 10.

In an embodiment, the semiconductor laser 100 is further provided with a beam combiner 50, and the beam combiner 50 combines the light beams from the first anti-reflection component 35 and the second anti-reflection component 45. The light beam combined by the beam combining lens 50 is coupled into the optical fiber from the focusing lens or directly output, or can be output through a window sheet.

The semiconductor laser provided by the application has the following beneficial effects:

1. the single-tube lasers are arranged on the steps of the double-row heat sinks, compared with the lasers with equal power distributed on the single-row steps, the single-tube lasers are smaller in size in the length direction and smaller in size in the height direction, light beams between adjacent single-tube lasers are not easy to interfere, and the length and the height of the semiconductor laser 100 can be reduced; the light emitting direction of the first single-tube laser 31 is opposite to the light emitting direction of the second single-tube laser 41, and the light beam emitted by the single-tube laser can be emitted from the gap between two adjacent single-tube lasers oppositely arranged, so that the length of the single-tube laser is used as a part of the slow axis collimation propagation path of the light beam, the transverse width of the double-row single-tube laser can be reduced, and the semiconductor laser 100 is beneficial to miniaturization and light weight of the semiconductor laser 100 because the length, the height and the width of the semiconductor laser 100 are reduced.

2. The same-level steps of the first heat sink 21 and the second heat sink 22 which are correspondingly arranged are arranged in a staggered manner on the horizontal plane, the same-level steps of the first heat sink 21 and the second heat sink 22 which are correspondingly arranged are equal in vertical height, the two rows of light beams are staggered and opposite, and interference between the opposite rows of light beams can be prevented.

The foregoing description is only a partial embodiment of the present utility model, and is not intended to limit the scope of the present utility model, and all equivalent devices or equivalent processes using the descriptions and the drawings of the present utility model or directly or indirectly applied to other related technical fields are included in the scope of the present utility model.

Claims (10)

1. A semiconductor laser, comprising:

the laser device comprises a base, a heat sink, a first laser unit and a second laser unit, wherein the heat sink is connected to the middle area of the base and comprises a first heat sink and a second heat sink which are in a ladder shape, and the first heat sink and the second heat sink are opposite at intervals;

the first laser unit is provided with a plurality of first single-tube lasers, the second laser unit is provided with a plurality of second single-tube lasers corresponding to the first single-tube lasers, the first single-tube lasers and the second single-tube lasers are respectively arranged on steps of the first heat sink and the second heat sink at intervals, the light emitting direction of the first single-tube lasers is opposite to the light emitting direction of the second single-tube lasers, light beams emitted by each first single-tube laser can be emitted through gaps between the two second single-tube lasers which are adjacently arranged on opposite sides, and light beams emitted by each second single-tube laser can be emitted through gaps between the two first single-tube lasers which are adjacently arranged on opposite sides.

2. The semiconductor laser according to claim 1, wherein the same-level steps provided in correspondence with the first heat sink and the second heat sink are equal in height in the vertical direction.

3. The semiconductor laser device according to claim 1, wherein the same-level steps of the first heat sink and the second heat sink are arranged in a staggered manner on a horizontal plane.

4. The semiconductor laser according to claim 1, wherein the first laser unit includes a plurality of first fast axis collimator lenses and first slow axis collimator lenses provided corresponding to the first single-tube laser, and the second laser unit includes a plurality of second fast axis collimator lenses and second slow axis collimator lenses provided corresponding to the second single-tube laser;

the light beam emitted by each first single-tube laser can sequentially pass through the first fast axis collimating lens, a gap between two second single-tube lasers which are adjacently arranged at the opposite side and the first slow axis collimating lens and then exit;

the light beam emitted by each second single-tube laser can sequentially pass through the second fast axis collimating lens, a gap between the two first single-tube lasers which are adjacently arranged at the opposite sides, and the second slow axis collimating lens and then exit.

5. The semiconductor laser according to claim 1, wherein the plurality of first single-tube lasers and the plurality of second single-tube lasers are respectively arranged in a straight line, and light beams emitted from the plurality of first single-tube lasers and the plurality of second single-tube lasers are parallel to each other.

6. The semiconductor laser according to claim 4, wherein a distance between two adjacent first single-tube lasers is greater than or equal to a width of a tail of the first single-tube laser, the distance between two adjacent second single-tube lasers is greater than or equal to a width of a tail of the second single-tube laser, and the distance between two adjacent second single-tube lasers is greater than or equal to a width of a tail of the second single-tube laser, the distance between two adjacent first single-tube lasers is greater than or equal to a width of a tail of the second single-tube laser, and the distance between two adjacent first single-tube lasers is greater than or equal to a width of a tail of the second single-tube laser.

7. The semiconductor laser of claim 4, wherein the first fast axis collimating lens and the second fast axis collimating lens are disposed at front ends of light emitting regions of the first single-tube laser and the second single-tube laser, respectively, and the first slow axis collimating lens and the second slow axis collimating lens are disposed on opposite sides of the base.

8. The semiconductor laser according to claim 4, wherein the first laser unit includes a plurality of first reflecting mirrors provided corresponding to the plurality of first slow-axis collimating lenses, and light beams reflected by the plurality of first reflecting mirrors are parallel to each other;

the second laser unit comprises a plurality of second reflecting mirrors which are arranged corresponding to the plurality of second slow-axis collimating lenses, and the light beams reflected by the plurality of second reflecting mirrors are parallel to each other;

the first reflectors and the second reflectors are arranged on two opposite sides of the base.

9. The semiconductor laser according to claim 8, wherein the first laser unit includes a first anti-reflection component, the second laser unit includes a second anti-reflection component, and the first anti-reflection component and the second anti-reflection component are respectively disposed in the beam emitting directions of the first mirror and the second mirror, and are respectively configured to receive and emit a plurality of parallel beams reflected by the plurality of first mirrors and the second mirror.

10. The semiconductor laser of claim 9, comprising a beam combiner that combines the light beams from the first and second anti-reflection assemblies.