CN218941359U - Silicon nitride ceramic wafer - Google Patents
Silicon nitride ceramic wafer Download PDFInfo
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- CN218941359U CN218941359U CN202222857124.4U CN202222857124U CN218941359U CN 218941359 U CN218941359 U CN 218941359U CN 202222857124 U CN202222857124 U CN 202222857124U CN 218941359 U CN218941359 U CN 218941359U
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Abstract
The utility model discloses a silicon nitride ceramic chip, which relates to the technical field of ceramic heating elements, and particularly comprises an inner core and an outer shell, wherein the outer surface of the inner core is wrapped with the outer shell, the inner core comprises a first toughening layer, a second toughening layer and a connecting layer, the first toughening layer is connected with the second toughening layer through the connecting layer, the first toughening layer and the second toughening layer both comprise a first toughening plate and a second toughening plate, and grooves and protrusions are uniformly formed on the outer surfaces of the first toughening layer and the second toughening layer. This silicon nitride potsherd, through the setting of layer one and the layer second of toughening, can improve the toughness of this potsherd, the use of this potsherd of being convenient for, through recess and bellied setting, improve the fastness of being connected between shell and tie layer and the layer first and toughening, the use of this potsherd of being convenient for, through the setting of abrasive material, can improve the antifriction performance of this potsherd, and the air can circulate from the abrasive material to follow, improves the heat dispersion of this potsherd.
Description
Technical Field
The utility model relates to the technical field of ceramic heating elements, in particular to a silicon nitride ceramic wafer.
Background
The ceramic heating element is a high-efficiency, uniform-heat-distribution and insulating heater, and is a product which is obtained by directly printing conductive resistance slurry on a ceramic green body, laminating and discharging glue, and then co-firing at high temperature into a whole. The extremely strong chemical bond nature determines that the grain dislocation density in the ceramic is low, the slip system is few, and the energy for crack growth is small. In the fracture process, besides adding new fracture surface energy, there is almost no other mechanism for dissipating energy, so that the toughness of the silicon nitride ceramic wafer is insufficient, the reliability is low in use, the ceramic heating element takes the silicon nitride ceramic wafer as a substrate, and the service life is short, so that the silicon nitride ceramic wafer is provided.
Disclosure of Invention
The utility model provides a silicon nitride ceramic wafer, which solves the problems of insufficient toughness and low reliability in the prior art.
The utility model provides the following technical scheme: the utility model provides a silicon nitride ceramic wafer, includes inner core and shell, the surface parcel of inner core has the shell, the inner core includes and adds tough layer one, toughen layer two and tie layer, it connects through the tie layer to add tough layer one and toughen layer two, it all includes toughen plate one and toughen plate two to add tough layer one and toughen layer two, it evenly is equipped with recess and arch to add the surface of toughen layer one and toughen layer two.
Preferably, metal powder is distributed in the connecting layer, and nonmetal powder is distributed in the shell.
Preferably, the first firmware on the first toughening layer and the first firmware on the second toughening layer are in a staggered state, and the grooves on the first toughening layer and the grooves on the second toughening layer are in a staggered state.
Preferably, two adjacent first firmware boards are connected through a second firmware board.
Preferably, the outer surface of the shell is fixedly connected with an abrasive.
Compared with the prior art, the utility model has the following beneficial effects:
1. this silicon nitride potsherd through the setting of layer one and the layer second of toughening, can improve the toughness of this potsherd, and the use of this potsherd of being convenient for improves the fastness of being connected between shell and tie layer and the layer first and toughening through recess and bellied setting, and the use of this potsherd of being convenient for.
2. According to the silicon nitride ceramic plate, the abrasion resistance of the ceramic plate can be improved through the arrangement of the abrasive materials, and air can circulate among the abrasive materials, so that the heat dissipation performance of the ceramic plate is improved.
Drawings
FIG. 1 is a schematic diagram of the front of the structure of the present utility model;
FIG. 2 is a schematic diagram of a structural toughening layer according to the present utility model;
FIG. 3 is a schematic diagram of the connection of the first and second firmware boards.
In the figure: 1. a housing; 2. a first toughening layer; 3. a connection layer; 4. a second toughening layer; 5. a first firmware; 6. a groove; 7. a protrusion; 8. and a second firmware.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The utility model provides a silicon nitride ceramic wafer, which comprises an inner core and a shell 1, wherein the shell 1 is wrapped on the outer surface of the inner core, the inner core can increase the toughness of the ceramic wafer, the shell 1 can maintain the original performance of the ceramic wafer unchanged, the toughness of the ceramic wafer is improved, and the ceramic wafer is convenient to use.
Referring to fig. 1 to 3, the inner core includes a first toughening layer 2, a second toughening layer 4 and a connecting layer 3, the first toughening layer 2 and the second toughening layer 4 are connected through the connecting layer 3, and the first toughening layer 2 and the second toughening layer 4 can be connected together through the arrangement of the connecting layer 3, so that the hardness of the ceramic chip can be ensured.
The first and second toughening layers 2 and 4 respectively comprise a first toughening plate 5 and a second toughening plate 8, the adjacent first toughening plates 5 are connected through the second toughening plate 8, the first toughening plate 5 on the first toughening layer 2 and the first toughening plate 5 on the second toughening layer 4 are in a staggered state, the first toughening plate 5 and the second toughening plate 8 are different in material, in one embodiment of the utility model, the first toughening plate 5 is made of silicon carbide fiber, the second toughening plate 8 is made of alumina, the first toughening plate 5 and the second toughening plate 8 are alternately arranged, the influence of the external force acting on the ceramic chip can be reduced, grooves 6 and protrusions 7 are uniformly formed on the outer surfaces of the first toughening layer 2 and the second toughening layer 4, the grooves 6 on the first toughening layer 2 and the grooves 6 on the second toughening layer 4 are in a staggered state, and the firmness of connection between the first toughening layer 3 and the first toughening layer 2 and the second toughening layer 4 is improved through the arrangement of the grooves 6 and the protrusions 7.
The even fixedly connected with abrasive material of surface of shell 1, in the one kind of implementation of this application, the shape of abrasive material is the ball-type, and the material of abrasive material is the silicon nitride pottery, through the surface fixed abrasive material at shell 1, can increase the area of contact of this potsherd with air, and then improves the heat dispersion of this potsherd, the use of this potsherd of being convenient for.
The material of the connection layer 3 is a mixture of silicon nitride ceramic powder and metal powder, the material of the housing 1 is a mixture of silicon nitride ceramic powder and nonmetal powder, in one embodiment of the application, the nonmetal powder is silicon carbide fiber reinforced silicon carbide, and the metal powder is aluminum oxide.
To sum up: when the silicon nitride ceramic chip is used, nonmetal powder in the shell 1 enhances the toughness of the shell 1, metal powder in the connecting layer 3 enhances the toughness of the connecting layer 3, the toughness of the ceramic chip is further improved by the first toughening layer 2 and the second toughening layer 4, and the shapes of the first toughening layer 2 and the second toughening layer 4 are set, so that the connecting layer 3 and the first toughening layer 2 and the second toughening layer 4 can be connected more firmly.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. Silicon nitride ceramic wafer, including inner core and shell (1), its characterized in that: the outer surface parcel of inner core has shell (1), the inner core includes and adds tough layer one (2), toughen layer two (4) and tie layer (3), it connects through tie layer (3) to add tough layer one (2) and toughen layer two (4), toughen layer one (2) and toughen layer two (4) all include toughen board one (5) and toughen board two (8), toughen layer one (2) and toughen layer two (4)'s surface evenly be equipped with recess (6) and arch (7).
2. A silicon nitride ceramic wafer according to claim 1, wherein: the metal powder is distributed in the connecting layer (3), and the nonmetal powder is distributed in the shell (1).
3. A silicon nitride ceramic wafer according to claim 1, wherein: the first firmware (5) on the first toughening layer (2) and the first firmware (5) on the second toughening layer (4) are in a staggered state, and the grooves (6) on the first toughening layer (2) and the grooves (6) on the second toughening layer (4) are in a staggered state.
4. A silicon nitride ceramic wafer according to claim 1, wherein: two adjacent first firmware boards (5) are connected through a second firmware board (8).
5. A silicon nitride ceramic wafer according to claim 1, wherein: the outer surface of the shell (1) is fixedly connected with an abrasive.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202222857124.4U CN218941359U (en) | 2022-10-28 | 2022-10-28 | Silicon nitride ceramic wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202222857124.4U CN218941359U (en) | 2022-10-28 | 2022-10-28 | Silicon nitride ceramic wafer |
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CN218941359U true CN218941359U (en) | 2023-04-28 |
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CN202222857124.4U Active CN218941359U (en) | 2022-10-28 | 2022-10-28 | Silicon nitride ceramic wafer |
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2022
- 2022-10-28 CN CN202222857124.4U patent/CN218941359U/en active Active
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