CN213402949U - Voltage common source amplifying circuit and multistage amplifying circuit - Google Patents
Voltage common source amplifying circuit and multistage amplifying circuit Download PDFInfo
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- CN213402949U CN213402949U CN202022500720.8U CN202022500720U CN213402949U CN 213402949 U CN213402949 U CN 213402949U CN 202022500720 U CN202022500720 U CN 202022500720U CN 213402949 U CN213402949 U CN 213402949U
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Abstract
The application discloses a voltage common-source amplifying circuit and a multistage amplifying circuit, which are applied to the technical field of signal amplification and used for solving the problems that the existing amplifying circuit is not easy to integrate and the process is not compatible and large-area preparation is difficult. The application provides a first thin film transistor as the load tube and second thin film transistor and a constant voltage source as the drive tube, the positive pole of constant voltage source is connected respectively first thin film transistor's drain electrode and grid, first thin film transistor's drain electrode with first thin film transistor's grid is connected, second thin film transistor's grid is as signal input part, second thin film transistor's drain electrode with the node between the first thin film transistor source is as signal output part. The voltage common source amplifying circuit is simple in structure, mature in integrated process and capable of being prepared in a large area.
Description
Technical Field
The application relates to the technical field of signal amplification, in particular to a voltage common source amplification circuit and a multistage amplification circuit.
Background
The input loop of the common source amplifying circuit is a grid-source loop, and the output loop is a drain-source loop. The source is a common port of the input and output loops, so the source is called a common source. By selecting a proper direct-current power supply and a proper resistance value and setting a reasonable static working point, the amplification circuit still works to amplify after the alternating-current small signal is added, so that voltage amplification is realized.
The existing common-source amplifying circuit mainly comprises the following circuits:
(1) resistance load type common source amplifier circuit: large resistors are more difficult to integrate in circuits and are incompatible with thin film transistor processes.
(2) Depletion type TFT (Thin film transistor) type common source amplifier: an Organic Thin Film Transistor (OTFT) is required, and an OTFT (Organic thin film transistor) is required, and the conventional OTFT process is still not mature and is difficult to prepare and mass-produce.
In summary, it is very important to design a common source amplifier circuit that is easy to integrate, can be prepared in a large area, and has a simple structure.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a voltage common-source amplifying circuit and a multistage amplifying circuit, and aims to solve the technical problems that an existing amplifying circuit is not easy to integrate, the process is immature, and large-area preparation is difficult.
According to an aspect of the present application, a voltage common source amplifying circuit is provided, including a constant voltage source, and further including a first thin film transistor as a load tube and a second thin film transistor as a driving tube, the positive electrode of the constant voltage source is connected to the drain and the gate of the first thin film transistor respectively, the drain of the first thin film transistor is connected to the gate of the first thin film transistor, the negative electrode of the constant voltage source is grounded, the source of the first thin film transistor is shorted to the drain of the second thin film transistor, the gate of the second thin film transistor is used as a signal input end, the drain of the second thin film transistor is connected to a node between the sources of the first thin film transistor as a signal output end, and the source of the second thin film transistor is grounded.
According to another aspect of the present application, a multi-stage amplifier circuit is provided, including the above voltage common-source amplifier circuit, the voltage common-source amplifier circuit includes at least two voltage common-source amplifier circuits, each voltage common-source amplifier circuit has a first thin film transistor which is a single-gate thin film transistor, each voltage common-source amplifier circuit has a second thin film transistor which is a double-gate thin film transistor, a back gate of the second thin film transistor of the first voltage common-source amplifier circuit is used as a signal input terminal of the multi-stage amplifier circuit, a signal output terminal of the adjacent first voltage common-source amplifier circuit is connected to the signal input terminal of the second voltage common-source amplifier circuit, and a signal output terminal of the last voltage common-source amplifier circuit is used as the signal input terminal of the multi-stage amplifier circuit.
The application is through providing a voltage common source amplifier circuit and multistage amplifier circuit, through providing a first thin film transistor as the load tube and second thin film transistor and a constant voltage source as the drive tube, the positive pole of constant voltage source is connected respectively first thin film transistor's drain electrode and grid, first thin film transistor's drain electrode with first thin film transistor's grid is connected, second thin film transistor's grid is as signal input part, second thin film transistor's drain electrode with node between the first thin film transistor source is as signal output part. Meanwhile, the multistage amplification power is connected with the at least two voltage common source amplification circuits, so that the circuit structure is simple, the integrated process is mature, and large-area preparation can be realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments of the present application will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a schematic circuit diagram of a voltage common-source amplifier circuit according to an embodiment of the present application;
fig. 2 is a schematic circuit diagram of a voltage common source amplifier circuit according to another embodiment of the present application;
fig. 3 is a schematic circuit diagram of a voltage common source amplifier circuit according to another embodiment of the present application;
fig. 4 is a schematic circuit structure diagram of a voltage common source amplifier circuit according to another embodiment of the present application;
fig. 5 is a schematic circuit diagram of a multi-stage amplifying circuit according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Implementations of the present application are described in detail below with reference to the following detailed drawings:
example one
As shown in fig. 1, a voltage common-source amplifying circuit provided in an embodiment of the present application includes a constant voltage source 10, and further includes a first thin film transistor 11 serving as a load tube and a second thin film transistor 12 serving as a drive tube, where an anode of the constant voltage source 10 is connected to a drain and a gate of the first thin film transistor 11, a drain of the first thin film transistor 11 is connected to a gate of the first thin film transistor 11, a cathode of the constant voltage source 10 is grounded, a source of the first thin film transistor 11 is shorted with a drain of the second thin film transistor 12, the gate of the second thin film transistor 12 is used as a signal input end, a node between the drain of the second thin film transistor 12 and the source of the first thin film transistor 11 is used as a signal output end, and a source of the second thin film transistor 12 is grounded.
Illustratively, the first thin film transistor 11 is a single-gate thin film transistor, and the second thin film transistor 12 is a single-gate thin film transistor.
Specifically, when amplifying the input voltage signal, it is necessary to determine the amplification range of the amplifier, i.e., the input voltage magnitude range. Determining the range of the input voltage requires measuring the output curve under the static input, and selecting the region with larger magnification factor meeting the requirement. When the amplification signal area is selected, small signal analysis can be performed, and the amplification factor is obtained as follows:
wherein, gm1And gm2Transconductance r of the first thin film transistor 11 and the second thin film transistor 12, respectivelyo1And ro2Small signal resistances, A, of the first thin film transistor 11 and the second thin film transistor 12, respectivelyvIs the ratio of the output voltage to the input voltage.
A voltage signal is input from the gate of the second thin film transistor 12, the gate of the second thin film transistor 12 controls the on and off of the second thin film transistor 12, and changes the source-drain current of the second thin film transistor 12, at this time, the first thin film transistor 11 is in an on state, which is equivalent to a resistor, and the current flowing through the first thin film transistor 11 and the second thin film transistor 12 is affected by the voltage input from the gate of the second thin film transistor 12, so that the drain voltage of the second thin film transistor 12 changes.
Example two
As an embodiment of the present invention, as shown in fig. 2, the first thin film transistor 21 is a double-gate thin film transistor, and the second thin film transistor 22 is a single-gate thin film transistor.
The positive electrode of the constant voltage source 20 is connected to the drain and the back gate of the first thin film transistor 21, respectively, and the top gate of the first thin film transistor 21 is connected to the positive electrode of the constant voltage source 20.
EXAMPLE III
As an embodiment of the present invention, as shown in fig. 3, the first thin film transistor 31 is a single-gate thin film transistor, and the second thin film transistor 32 is a double-gate thin film transistor.
A voltage signal is input from the back gate of the second thin film transistor 32, the back gate of the second thin film transistor 32 controls the on and off of the second thin film transistor 32, and changes the source-drain current of the second thin film transistor 32, at this time, the first thin film transistor 31 is in an on state, which is equivalent to a resistor, and the current flowing through the first thin film transistor 31 and the second thin film transistor 32 is affected by the voltage input from the back gate of the second thin film transistor 32, so that the drain voltage of the second thin film transistor 32 changes.
In order to amplify the signal, the threshold voltage of the second thin film transistor 32 needs to be adjusted by the top gate voltage of the second thin film transistor 32, so that the voltage for turning on the second thin film transistor 32 can be adjusted, and the small voltage signal of 0-100mV can be simply amplified by adjusting the amplification region where the amplification region is needed. When amplifying small signals, calculating the amplification factor by the formula (2)
Wherein, gm1And gm2Transconductance, r, of the first thin film transistor 31 and the second thin film transistor 32, respectivelyo1And ro2Small signal resistances, a, of the first thin film transistor 31 and the second thin film transistor 32, respectivelyvIs the ratio of the output voltage to the input voltage.
Example four
As one embodiment of the present invention, as shown in fig. 4, the first thin film transistor 41 is a double-gate thin film transistor, and the second thin film transistor 42 is a double-gate thin film transistor. The back gate of the second thin film transistor 42 is used as a signal input terminal, and the top gate of the second thin film transistor 42 is connected to the positive electrode of the constant voltage source 40.
A voltage signal is input from the back gate of the second thin film transistor 42, the back gate of the second thin film transistor 42 controls the on and off of the second thin film transistor 42, and changes the source-drain current of the second thin film transistor 42, at this time, the first thin film transistor 41 is in an on state, which is equivalent to a resistor, and the current flowing through the first thin film transistor 41 and the second thin film transistor 42 is affected by the voltage input from the back gate of the second thin film transistor 42, so that the drain voltage of the second thin film transistor 42 changes. The amplification region is adjusted to the place where the amplification region is needed, so that a small voltage signal of 0-100mV can be simply amplified. When the small signal is amplified, the amplification factor is calculated by the formula (3).
Wherein, gm1And gm2Transconductance r of the first thin film transistor 41 and the second thin film transistor 42, respectivelyo1And ro2Small signal resistances, a, of the first thin film transistor 41 and the second thin film transistor 42, respectivelyvIs the ratio of the output voltage to the input voltage.
Illustratively, the width-to-length ratio of the drive tube is greater than the width-to-length ratio of the load tube.
Within the range of process allowance and actual needs, the larger the width-length ratio of the driving tube to the width-length ratio of the load tube is, the larger the obtained voltage amplification factor is, so that the driving tube meets the characteristics of small off-state current and enough on-state current, and the on-state current of the load tube should be smaller than that of the driving tube.
Illustratively, the active layer material of the load tube and the active layer material of the driving tube are different, and may be specifically one of amorphous silicon, polysilicon or indium gallium zinc oxide.
EXAMPLE five
As shown in fig. 5, an embodiment of the present invention provides a multi-stage amplifier circuit, which includes the voltage common-source amplifier circuit as claimed in the above, where the voltage common-source amplifier circuit includes at least two voltage common-source amplifier circuits, the first thin-film transistor of each voltage common-source amplifier circuit is a single-gate thin-film transistor, the second thin-film transistor of each voltage common-source amplifier circuit is a double-gate thin-film transistor, the back gate of the second thin-film transistor of the first voltage common-source amplifier circuit serves as the signal input terminal of the multi-stage amplifier circuit, the signal output terminal of the adjacent first voltage common-source amplifier circuit is connected to the signal input terminal of the second voltage common-source amplifier circuit, and the signal output terminal of the last voltage common-source amplifier circuit serves as the signal input terminal of the multi-stage amplifier circuit.
Further, as an embodiment of the present application, as shown in fig. 5, a back gate of the second thin film transistor 62 of the second voltage common-source amplifier circuit 60 is connected to a junction between the source of the first thin film transistor 51 and the drain of the second thin film transistor 52 in the first voltage common-source amplifier circuit 50, a junction between the source of the first thin film transistor 51 and the drain of the second thin film transistor 52 in the first voltage common-source amplifier circuit 50 serves as a signal output terminal of the first voltage common-source amplifier circuit 50, and a back gate of the second thin film transistor 62 of the second voltage common-source amplifier circuit 60 serves as a signal input terminal of the second voltage common-source amplifier circuit 60.
The voltage signal in the amplification region is input from the back gate of the second thin film transistor 52 of the first voltage common-source amplification circuit 50, and the on and off of the second thin film transistor 52 of the first voltage common-source amplification circuit 50 are regulated and controlled by the back gate of the second thin film transistor 52 of the first voltage common-source amplification circuit 50, so as to change the source-drain current of the second thin film transistor 52 of the first voltage common-source amplification circuit 50.
In order to obtain the maximum voltage amplification factor, the amplification range of the second voltage common-source amplification circuit 60 is adjusted to be larger than the output range of the first voltage amplification circuit 50.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (9)
1. The voltage common-source amplifying circuit comprises a constant-voltage source and is characterized by further comprising a first thin film transistor serving as a load tube and a second thin film transistor serving as a driving tube, wherein the positive electrode of the constant-voltage source is respectively connected with the drain electrode and the grid electrode of the first thin film transistor, the drain electrode of the first thin film transistor is connected with the grid electrode of the first thin film transistor, the negative electrode of the constant-voltage source is grounded, the source electrode of the first thin film transistor is in short circuit with the drain electrode of the second thin film transistor, the grid electrode of the second thin film transistor serves as a signal input end, a junction point between the drain electrode of the second thin film transistor and the source electrode of the first thin film transistor serves as a signal output end, and the source electrode of the second thin film transistor is grounded.
2. The voltage-common-source amplification circuit of claim 1, wherein the first thin film transistor is a single-gate thin film transistor or a double-gate thin film transistor.
3. The voltage-common-source amplifier circuit as claimed in claim 2, wherein when the first thin film transistor is a dual-gate thin film transistor, the positive electrode of the constant voltage source is connected to the drain and the back gate of the first thin film transistor, respectively, and the top gate of the first thin film transistor is connected to the positive electrode of the constant voltage source.
4. The voltage-common-source amplification circuit of claim 1, wherein the second thin film transistor is a single-gate thin film transistor or a double-gate thin film transistor.
5. The voltage-common-source amplifier circuit as claimed in claim 4, wherein when the second thin film transistor is a dual-gate thin film transistor, a back gate of the second thin film transistor is used as a signal input terminal, and a top gate of the second thin film transistor is connected to the positive electrode of the constant voltage source.
6. The voltage common-source amplification circuit according to any one of claims 1 to 5, wherein the width-to-length ratio of the driving tube is larger than the width-to-length ratio of the load tube.
7. The voltage common-source amplifier circuit according to any one of claims 1 to 5, wherein the active layer material of the load tube and the active layer material of the driving tube are different.
8. A multi-stage amplifier circuit, comprising the voltage common-source amplifier circuit as claimed in any one of claims 1 to 7, wherein the voltage common-source amplifier circuit comprises at least two voltage common-source amplifier circuits, the first thin film transistor of each voltage common-source amplifier circuit is a single-gate thin film transistor, the second thin film transistor of each voltage common-source amplifier circuit is a double-gate thin film transistor, the back gate of the second thin film transistor of the first voltage common-source amplifier circuit serves as the signal input terminal of the multi-stage amplifier circuit, the signal output terminal of the adjacent first voltage common-source amplifier circuit is connected to the signal input terminal of the second voltage common-source amplifier circuit, and the signal output terminal of the last voltage common-source amplifier circuit serves as the signal input terminal of the multi-stage amplifier circuit.
9. The multi-stage amplifier circuit according to claim 8, wherein a gate of the second thin film transistor of the second voltage common-source amplifier circuit is connected to a junction between a source of the first thin film transistor and a drain of the second thin film transistor in the first voltage common-source amplifier circuit, the junction between the source of the first thin film transistor and the drain of the second thin film transistor in the first voltage common-source amplifier circuit serves as a signal output terminal of the first voltage common-source amplifier circuit, and a back gate of the second thin film transistor of the second voltage common-source amplifier circuit serves as a signal input terminal of the second voltage common-source amplifier circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022500720.8U CN213402949U (en) | 2020-11-02 | 2020-11-02 | Voltage common source amplifying circuit and multistage amplifying circuit |
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| CN202022500720.8U CN213402949U (en) | 2020-11-02 | 2020-11-02 | Voltage common source amplifying circuit and multistage amplifying circuit |
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| CN213402949U true CN213402949U (en) | 2021-06-08 |
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| CN202022500720.8U Active CN213402949U (en) | 2020-11-02 | 2020-11-02 | Voltage common source amplifying circuit and multistage amplifying circuit |
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