CN212587483U

CN212587483U - High-heat-dissipation semiconductor product and electronic product

Info

Publication number: CN212587483U
Application number: CN202020583700.9U
Authority: CN
Inventors: 曹周
Original assignee: Great Team Backend Foundry Dongguan Co Ltd
Current assignee: Great Team Backend Foundry Dongguan Co Ltd
Priority date: 2020-04-17
Filing date: 2020-04-17
Publication date: 2021-02-23
Anticipated expiration: 2030-04-17

Abstract

The utility model discloses a high heat dissipation semiconductor product, be in including base plate, setting the chip of base plate top and be used for the encapsulation the epoxy of chip, the base plate has relative base plate upper surface and the base plate lower surface that sets up, base plate lower surface department is provided with fin installation blind hole, be provided with the bottom fin in the fin installation blind hole, the chip sets up the base plate upper surface with the corresponding position of bottom fin, the chip upper surface is provided with the top fin, the upper surface of top fin with epoxy's upper surface flushes. The radiating fins are arranged on the two sides of the chip, so that heat generated in the working process of the chip can be well transmitted to the radiating fins and transmitted to electronic products such as a circuit board and the like through the radiating fins.

Description

High-heat-dissipation semiconductor product and electronic product

Technical Field

The utility model relates to a semiconductor product technical field especially relates to a high heat dissipation semiconductor product and use its electronic product.

Background

The semiconductor is a material with a conductive capability between a conductor and a non-conductor, and the semiconductor element belongs to a solid-state element according to the characteristics of the semiconductor material, the volume of the semiconductor element can be reduced to a small size, so the power consumption is low, the integration level is high, the semiconductor element is widely applied in the field of electronic technology, and the heat dissipation performance becomes one of important indexes of the semiconductor element along with the gradual increase of the operating power of the semiconductor element, and under the high-heat working environment, the maintenance of the working reliability of the semiconductor element is a very important problem.

Because the power IC chip needs more leading-out terminals, the package is mostly carried out by adopting a substrate, the package appearance is LGA and BGA, but the substrate has poor heat dissipation effect, and the package development of the IC is restricted.

SUMMERY OF THE UTILITY MODEL

The embodiment of the utility model provides an aim at: the patent refers to the field of 'semiconductor devices and electric solid state devices'.

In order to achieve the purpose, the utility model adopts the following technical proposal:

on the one hand, provide a high heat dissipation semiconductor product, be in including base plate, setting the chip of base plate top and be used for the encapsulation the epoxy of chip, the base plate has relative base plate upper surface and the base plate lower surface that sets up, base plate lower surface department is provided with fin installation blind hole, be provided with the bottom fin in the fin installation blind hole, the chip sets up the base plate upper surface with the corresponding position of bottom fin, the chip upper surface is provided with the top fin, the upper surface of top fin with epoxy's upper surface flushes.

As a preferable technical solution of the high heat dissipation semiconductor product, a partition is formed at a portion of the substrate between the bottom heat sink and the chip, and a thickness of the partition is smaller than a thickness of the bottom heat sink.

As a preferable technical solution of the high heat dissipation semiconductor product, the chip and the substrate and the bottom heat sink and the substrate are fixedly connected by an adhesive material, respectively.

As a preferable technical solution of the high heat dissipation semiconductor product, a plurality of heat dissipation grooves are formed in the lower surface of the bottom heat dissipation plate, and the distances between adjacent heat dissipation grooves are the same.

As a preferable technical solution of the high heat dissipation semiconductor product, the number of the heat sink mounting blind holes is plural, and at least one of the bottom heat sinks is respectively disposed in each of the heat sink mounting blind holes.

As a preferable technical solution of the high heat dissipation semiconductor product, the chip corresponds to all the bottom heat sinks simultaneously.

As a preferable technical solution of the high heat dissipation semiconductor product, the bottom heat sink is made of graphene, graphene-modified copper, metallic copper, aluminum, or a ceramic material.

As a preferable technical solution of the high heat dissipation semiconductor product, the chip includes an upper chip surface and a lower chip surface that are oppositely disposed, the lower chip surface is disposed toward the upper substrate surface, and the upper chip surface is electrically connected to the outside through a metal wire.

As a preferable technical solution of the high heat dissipation semiconductor product, an in-board copper line penetrating through the substrate is disposed on the substrate, the upper surface of the chip is electrically connected to the in-board copper line through the metal wire, and the high heat dissipation semiconductor product is electrically connected to the outside through the in-board copper line.

In another aspect, an electronic product is provided, which has the semiconductor product with high heat dissipation as described above.

The utility model has the advantages that: the radiating fins are arranged on the two sides of the chip, so that heat generated in the working process of the chip can be well transmitted to the radiating fins and transmitted to electronic products such as a circuit board and the like through the radiating fins.

Drawings

The present invention will be described in further detail with reference to the accompanying drawings and examples.

Fig. 1 is a schematic structural view of a high heat dissipation semiconductor product according to an embodiment of the present invention.

Fig. 2 is another schematic structural diagram of a high heat dissipation semiconductor product according to an embodiment of the present invention.

Fig. 3 is a schematic view of another structure of a high heat dissipation semiconductor product according to an embodiment of the present invention.

In the figure:

100. a substrate; 101. a partition plate; 110. blind holes are formed in the radiating fins; 200. a chip; 300. an epoxy resin; 400. a bottom heat sink; 500. a bonding material; 600. a copper line in the substrate; 700. a metal wire; 800. A top heat sink.

Detailed Description

In order to make the technical problem solved by the present invention, the technical solutions adopted by the present invention and the technical effects achieved by the present invention clearer, the embodiments of the present invention are described in further detail below, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention.

In the description of the present invention, unless otherwise expressly specified or limited, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, detachably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

As shown in fig. 1, the present embodiment provides a high heat dissipation semiconductor product, including a substrate 100, a chip 200 disposed above the substrate 100, and an epoxy resin 300 for encapsulating the chip 200, where the substrate 100 has an upper surface of the substrate 100 and a lower surface of the substrate 100 that are disposed opposite to each other, a blind heat sink mounting hole 110 is disposed at the lower surface of the substrate 100, a bottom heat sink 400 is disposed in the blind heat sink mounting hole 110, the chip 200 is disposed at a position where the upper surface of the substrate 100 corresponds to the bottom heat sink 400, a top heat sink is disposed at the upper surface of the chip 200, and the upper surface of the top heat sink is flush with the upper surface of the epoxy resin.

The radiating fins are arranged on the two sides of the chip 200, so that heat generated in the working process of the chip 200 can be well transmitted to the radiating fins and can be transmitted to electronic products such as a circuit board and the like through the radiating fins, and the radiating performance of the power IC chip 200 can be greatly improved through the design because the radiating performance of the radiating fins is higher than that of the substrate 100.

By arranging the blind hole 110 for installing the heat sink on the substrate 100 and arranging the heat sink in the blind hole 110 for installing the heat sink, the heat generated in the working process of the chip 200 can be well transferred to the heat sink under the condition of affecting the rigidity of the substrate 100 as little as possible, and transferred to electronic products such as a circuit board and the like through the heat sink, and the heat dissipation capability of the power IC chip 200 can be greatly improved through the design because the heat dissipation performance of the heat sink is higher than that of the substrate 100.

Specifically, in this embodiment, a partition 101 is formed at a portion of the substrate 100 located between the bottom heat sink 400 and the chip 200, and a thickness of the partition 101 is smaller than a thickness of the bottom heat sink 400.

Preferably, the chip 200 and the substrate 100 and the bottom heat sink 400 and the substrate 100 are fixedly connected by an adhesive material 500, respectively.

In order to improve the heat dissipation effect of the high heat dissipation semiconductor product of this embodiment, as shown in fig. 2, a plurality of heat dissipation grooves are disposed on the lower surface of the bottom heat dissipation plate 400, and the distances between adjacent heat dissipation grooves are the same. The heat sink is disposed on the lower surface of the bottom heat sink 400, so that the heat sink has a heat exchange space for exchanging heat with air, and the heat of the bottom heat sink 400 can be rapidly diffused into the air, thereby rapidly dissipating heat from the chip 200.

In the above-mentioned solution, one of the blind heat sink mounting holes 110 is provided, and a bottom heat sink 400 having an integral structure is disposed thereon.

It should be noted that, in other embodiments, a plurality of the heat sink installation blind holes may be provided, and at least one of the bottom heat sinks 400 is respectively provided in each of the heat sink installation blind holes 110. The chip 200 corresponds to all the bottom heat sinks 400 at the same time.

As shown in fig. 3, there are two heat sink mounting blind holes 110, and one bottom heat sink 400 is disposed in each of the two heat sink mounting blind holes 110.

In this scheme bottom fin 400 can adopt graphite alkene, graphite alkene modified copper, metallic copper, aluminium or ceramic material to make.

Specifically, in this embodiment, the bottom heat sink 400 is made of a graphene material.

Meanwhile, in the high heat dissipation semiconductor product of this embodiment, the chip 200 includes an upper surface of the chip 200 and a lower surface of the chip 200, which are oppositely disposed, the lower surface of the chip 200 is disposed toward the upper surface of the substrate 100, and the upper surface of the chip 200 is electrically connected to the outside through the metal wire 700. An in-board copper circuit penetrating through the substrate 100 is arranged on the substrate 100, the upper surface of the chip 200 is electrically connected with the in-board copper circuit through the metal wire 700, and the high-heat-dissipation semiconductor product is electrically connected with the outside through the in-board copper circuit.

Meanwhile, the embodiment also provides an electronic product which is provided with the high-heat-dissipation semiconductor product.

In the description herein, it is to be understood that the terms "upper," "lower," "left," "right," and the like are used merely for convenience in description and simplicity in operation, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. Furthermore, the terms "first" and "second" are used merely for descriptive purposes and are not intended to have any special meaning.

In the description herein, references to the description of "an embodiment," "an example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be appropriately combined to form other embodiments as will be appreciated by those skilled in the art.

The technical principle of the present invention is described above with reference to specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without any inventive effort, which would fall within the scope of the present invention.

Claims

1. The utility model provides a high heat dissipation semiconductor product, includes base plate (100), sets up chip (200) above base plate (100) and is used for the encapsulation epoxy (300) of chip (200), its characterized in that, base plate (100) have relative base plate (100) upper surface and base plate (100) lower surface that sets up, base plate (100) lower surface department is provided with fin installation blind hole (110), be provided with bottom fin (400) in fin installation blind hole (110), chip (200) set up base plate (100) upper surface with the corresponding position of bottom fin (400), chip (200) upper surface is provided with the top fin, the upper surface of top fin with the upper surface of epoxy (300) flushes.

2. The high heat dissipation semiconductor product of claim 1, wherein a portion of the substrate (100) between the bottom heat sink (400) and the chip (200) forms a spacer (101), and a thickness of the spacer (101) is smaller than a thickness of the bottom heat sink (400).

3. The high heat dissipation semiconductor product of claim 2, wherein the chip (200) and the substrate (100) and the bottom heat sink (400) and the substrate (100) are fixedly connected by an adhesive material (500), respectively.

4. The high heat dissipation semiconductor product of claim 3, wherein the bottom surface of the bottom heat sink (400) is provided with a plurality of heat dissipation grooves, and the distances between adjacent heat dissipation grooves are the same.

5. The high heat dissipation semiconductor product as recited in claim 1, wherein the blind heat sink mounting hole (110) is provided in plurality, and at least one of the bottom heat sinks (400) is provided in each of the blind heat sink mounting holes (110).

6. The high heat dissipation semiconductor product of claim 5, wherein the chip (200) is in contact with all of the bottom heat sinks (400) simultaneously.

7. The high heat dissipation semiconductor product of claim 1, wherein the bottom fin (400) is made of graphene, graphene-modified copper, metallic copper, aluminum, or a ceramic material.

8. The high heat dissipation semiconductor product of claim 1, wherein the chip (200) comprises an upper surface of the chip (200) and a lower surface of the chip (200) which are oppositely arranged, the lower surface of the chip (200) is arranged towards the upper surface of the substrate (100), and the upper surface of the chip (200) is electrically connected with the outside through a metal wire (700).

9. The high heat dissipation semiconductor product as recited in claim 8, wherein an in-board copper trace penetrating the substrate (100) is disposed on the substrate (100), the chip (200) upper surface is electrically connected to the in-board copper trace through the metal wire (700), and the high heat dissipation semiconductor product is electrically connected to the outside through the in-board copper trace.

10. An electronic product, characterized in that, the high heat dissipation semiconductor product of any one of claims 1-9 is provided.