CN209913232U - Semiconductor laser pumping source packaging structure - Google Patents
Semiconductor laser pumping source packaging structure Download PDFInfo
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- CN209913232U CN209913232U CN201921010280.9U CN201921010280U CN209913232U CN 209913232 U CN209913232 U CN 209913232U CN 201921010280 U CN201921010280 U CN 201921010280U CN 209913232 U CN209913232 U CN 209913232U
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- heat sink
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Abstract
The utility model relates to the technical field of semiconductor lasers, and discloses a semiconductor laser pumping source packaging structure, which comprises a plurality of semiconductor chips, an insulating base and heat sinks corresponding to the semiconductor chips one by one, wherein the insulating base is in a step shape, a first conducting layer and a second conducting layer are arranged on each step surface at intervals, and the first conducting layer on the step surface is electrically connected with the second conducting layer on the adjacent step surface at one side through a third conducting layer arranged on the side wall of the step; the upper surface of the heat sink is connected to the semiconductor chip, and the lower surface of the heat sink is connected to the step surface. The semiconductor laser pumping source packaging structure cancels an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure and improves the packaging reliability.
Description
Technical Field
The utility model relates to a semiconductor laser technical field especially relates to a semiconductor laser pumping source packaging structure.
Background
The semiconductor laser is a P-N junction diode with optical feedback function using semiconductor material as working substance, and compared with solid laser and gas laser, it has the advantages of compact structure, high reliability, high efficiency and stability, etc., and has been widely used in the industries of machining, material processing, weapon manufacturing and laser display, etc. In order to obtain a larger output power, a plurality of individual semiconductor lasers are generally combined together to form an array, resulting in a high-power semiconductor laser. At present, the electro-optic conversion efficiency of a high-power semiconductor laser is low, most electric power is converted into thermal power, and the optical characteristics, the output power and the reliability of the semiconductor laser are closely related to the working temperature of a device, so that the packaging technology of the high-power semiconductor laser needs to be optimized to ensure that the laser has higher efficiency, better spectrum and higher output power.
At present, a metal base is mainly adopted in a semiconductor pumping source packaging structure, a semiconductor Chip cannot be directly bonded with the base, on one hand, electric heat isolation cannot be realized, on the other hand, the mismatch of Coefficient of Thermal Expansion (CTE) is too large, and the reliability of the semiconductor Chip is lower, so that a Chip on sub-mount (COS module for short) must be manufactured. However, the CTE mismatch between the lens and the metal base is too large, and the lens and the mirror may fail, so that the lens and the mirror need to be bonded to the metal base through a ceramic substrate to prevent the mismatch of the thermal expansion coefficients and the mirror from being broken. Simultaneously, still need adopt the aluminum wire to realize the series connection structure of a plurality of modules between the COS module, and the aluminum wire machine is more expensive, and there is the risk of inefficacy in the aluminum wire.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a semiconductor laser pumping source packaging structure for solve current semiconductor laser pumping source packaging structure and adopt a plurality of modules of aluminium wire series connection to have the problem that the cost is too high, lose efficacy easily, with reliability, the economic nature that improves packaging structure.
The embodiment of the utility model provides a semiconductor laser pumping source packaging structure, including a plurality of semiconductor chips, still include insulating base and with semiconductor chip one-to-one's heat sink, insulating base is the step form, and equal interval is provided with first conducting layer and second conducting layer on every step face, first conducting layer on the step face is connected through the third conducting layer electricity that locates the step lateral wall with the second conducting layer on the adjacent side step face; the upper surface of the heat sink is connected to the semiconductor chip, and the lower surface of the heat sink is connected to the step surface.
The heat sink further comprises a first heat sink wiring board and a second heat sink wiring board which are arranged on the heat sink at intervals, wherein the lower surface of the first heat sink wiring board is connected to the first conductive layer, and the lower surface of the second heat sink wiring board is connected to the second conductive layer; one end of the semiconductor chip is fixedly connected to the upper surface of the first heat sink wiring board, and the other end of the semiconductor chip is electrically connected to the upper surface of the second heat sink wiring board through a gold wire.
Wherein the first heat sink wiring board includes a first upper heat sink wiring board provided on an upper surface of the heat sink and a first lower heat sink wiring board provided on a lower surface of the heat sink; the first upper heat sink wiring board is electrically connected to the first lower heat sink wiring board; the second heat sink wiring board includes a second upper heat sink wiring board provided on an upper surface of the heat sink and a second lower heat sink wiring board provided on a lower surface of the heat sink; the second upper heat sink wiring board is electrically connected to the second lower heat sink wiring board.
The heat sink comprises a first heat sink wiring board, a second heat sink wiring board and a heat sink, wherein the first heat sink wiring board is arranged on the first heat sink; and a second conductive piece is arranged in the second through hole, and the second upper heat sink wiring board is electrically connected to the second lower heat sink wiring board through the second conductive piece.
Wherein the first and second conductive members include conductive pillars and/or metallization layers.
And the lower surface of the heat sink is welded on the step surface through a solder sheet.
Wherein, the insulating base is a ceramic base.
And the upper surface of the heat sink is provided with a gold-tin solder area, and the semiconductor chip is welded in the gold-tin solder area.
The semiconductor chip comprises a semiconductor chip, and is characterized by further comprising a lens and a reflector which correspond to the semiconductor chip one by one, wherein the lens and the reflector are fixedly connected to the insulating base.
The lens and the reflector are bonded to the insulating base through ultraviolet curing glue.
The embodiment of the utility model provides a semiconductor laser pumping source packaging structure, including a plurality of semiconductor chips, still include insulating base and with the heat sink of semiconductor chip one-to-one, all rigid couplings have a semiconductor chip on every heat sink to form a semiconductor chip module; the insulating base is step-shaped, and each step surface is connected with a semiconductor chip module to form a semiconductor laser array. Meanwhile, the first conducting layer and the second conducting layer on the step surface are used for realizing the electric connection with the semiconductor chip modules, and the third conducting layer on the side wall of the step is used for realizing the series connection between the adjacent semiconductor chip modules. The semiconductor laser pumping source packaging structure cancels an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure and improves the packaging reliability.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is an isometric view of a semiconductor laser pump source package in an embodiment of the invention;
fig. 2 is a cross-sectional view of the semiconductor chip module of fig. 1;
description of reference numerals:
1: a semiconductor chip; 2: an insulating base; 21: a step surface;
22: a first conductive layer; 23: a second conductive layer; 24: a third conductive layer;
3: a heat sink; 4: a first heat sink wiring board; 41: a first upper heat sink wiring board;
42: a first lower heat sink wiring board; 43: a first conductive member; 5: a second heat sink wiring board;
51: a second upper heat sink wiring board; 52: a second lower heat sink wiring board;
53: a second conductive member; 6: gold thread; 7: a solder sheet;
8: a lens; 9: a mirror; 10: a semiconductor chip module is provided.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the embodiments of the present invention, it should be noted that the terms "first", "second" and "third" are used for the sake of clarity in describing the numbering of the product parts and do not represent any substantial difference, unless explicitly stated or limited otherwise. The directions of the upper part, the lower part, the left part and the right part are all based on the directions shown in the attached drawings. The specific meaning of the above terms in the embodiments of the present invention can be understood by those skilled in the art according to specific situations.
It is to be understood that, unless otherwise expressly specified or limited, the term "coupled" is used broadly, and may, for example, refer to directly coupled devices or indirectly coupled devices through intervening media. The specific meaning of the above terms in the embodiments of the present invention can be understood in specific cases by those skilled in the art.
Fig. 1 is an isometric view of a semiconductor laser pump source packaging structure in the embodiment of the present invention, and fig. 2 is a cross-sectional view of the semiconductor chip module in fig. 1, as shown in fig. 1-2, an embodiment of the present invention provides a semiconductor laser pump source packaging structure, including a plurality of semiconductor chips 1, still include insulator base 2 and heat sink 3 with semiconductor chip 1 one-to-one, insulator base 2 is the step form, and equal interval is provided with first conducting layer 22 and second conducting layer 23 on every step face 21, and first conducting layer 22 on the left step face 21 is connected through the third conducting layer 24 electricity of locating the step lateral wall with the second conducting layer 23 on the adjacent step face 21 in right side. The upper surface of the heat sink 3 is connected to the semiconductor chip 1, and the lower surface of the heat sink 3 is connected to the step surface 21.
Specifically, the insulating base 2 is made of an insulating material, such as a ceramic base, which has the performance advantages of excellent heat resistance, good corrosion resistance, high mechanical strength, light weight, and the like, and is more and more widely applied in the field of packaging. Because the ceramic base has excellent insulating property, thermoelectric isolation can be realized through local metallization, and the thermal expansion coefficient of the ceramic base is close to that of glass, so that the requirement of bonding a lens and a reflector can be met. In addition, the insulating base 2 may also adopt other insulating bases having thermal conductivity satisfying the heat dissipation requirement of the semiconductor chip 1 and having a thermal expansion coefficient close to that of the lens and the mirror, which is not limited herein.
The heat sink 3 is an insulating heat sink, and may be an aluminum nitride ceramic heat sink or other high thermal conductivity heat sink, where the high thermal conductivity represents a thermal conductivity greater than or equal to 200W/(m · K). The semiconductor chip 1 is fixed on the step surface 21 of the insulating base 2 through the heat sink 3.
The first conductive layer 22, the second conductive layer 23, and the third conductive layer may be gold-plated layers. More specifically, the work of providing the first conductive layer 22, the second conductive layer 23, and the third conductive layer on the insulating base 2 may be performed by using photolithography development or a stainless mask in combination with a magnetron sputtering process.
The semiconductor laser pumping source packaging structure provided by the embodiment comprises a plurality of semiconductor chips, an insulating base and heat sinks corresponding to the semiconductor chips one by one, wherein each heat sink is fixedly connected with one semiconductor chip to form a semiconductor chip module; the insulating base is step-shaped, and each step surface is connected with a semiconductor chip module to form a semiconductor laser array. Meanwhile, the first conducting layer and the second conducting layer on the step surface are used for realizing the electric connection with the semiconductor chip modules, and the third conducting layer on the side wall of the step is used for realizing the series connection between the adjacent semiconductor chip modules. The semiconductor laser pumping source packaging structure cancels an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure and improves the packaging reliability.
Further, as shown in fig. 1 and 2, the semiconductor laser pump source package structure further includes a first heatsink wiring board 4 and a second heatsink wiring board 5 which are disposed on the heatsink 3 at intervals, a lower surface of the first heatsink wiring board 4 is connected to the first conductive layer 22, and a lower surface of the second heatsink wiring board 5 is connected to the second conductive layer 23. The lower end of the semiconductor chip 1 is fixed to the upper surface of the first heat sink wiring board 4, and the upper end of the semiconductor chip 1 is electrically connected to the upper surface of the second heat sink wiring board 5 by gold wires 6.
Specifically, the first heat sink wiring board 4 and the second heat sink wiring board 5 are copper-based heat sink wiring boards, a layer of bottom copper can be deposited on the surface of the heat sink 3 in modes of magnetron vacuum sputtering or chemical deposition, then different wiring areas are formed through photoetching and developing, electroplating is carried out for thickening, finally, the film is removed, the bottom copper is etched, and wiring is completed, so that electrical performance connection is realized.
In this embodiment, the first heat sink wiring board 4 is taken as a positive electrode plate, and the second heat sink wiring board 5 is taken as a negative electrode plate, the lower end of the semiconductor chip 1 is a P-terminal, the upper end of the semiconductor chip 1 is an N-terminal, the P-terminal of the semiconductor chip 1 is fixedly connected to the upper surface of the first heat sink wiring board 4, and the N-terminal of the semiconductor chip 1 is fixedly connected to the upper surface of the second heat sink wiring board 5 by a gold wire 6. The fixation here means metal solder bonding, and electrical connection can be achieved. In addition, the positive and negative polarities of the first heat sink wiring board 4 and the second heat sink wiring board 5 may be exchanged as needed as long as the polarities of the two are ensured to be opposite.
Further, as shown in fig. 2, the first heatsink wiring board 4 includes a first upper heatsink wiring board 41 provided on the upper surface of the heatsink 3 and a first lower heatsink wiring board 42 provided on the lower surface of the heatsink 3. The first upper heat sink wiring board 41 is electrically connected to the first lower heat sink wiring board 42. The second heat sink wiring board 5 includes a second upper heat sink wiring board 51 provided on the upper surface of the heat sink 3 and a second lower heat sink wiring board 52 provided on the lower surface of the heat sink 3. The second upper heat sink wiring board 51 is electrically connected to the second lower heat sink wiring board 52.
Further, the heat sink 3 is also provided with a first through hole and a second through hole penetrating the heat sink 3, the first through hole is provided with a first conductive member 43 therein, and the first upper heat sink wiring board 41 is electrically connected to the first lower heat sink wiring board 42 through the first conductive member 43. A second conductive member 53 is provided in the second through hole, and the second upper heat sink wiring board 51 is electrically connected to the second lower heat sink wiring board through the second conductive member 53. Specifically, the number of the first through holes and the second through holes may be one or more.
By introducing the conductive through holes into the semiconductor chip module 10, the semiconductor chip module 10 can be electrically connected to the insulating base through the back electrode, which is beneficial to realizing a series structure among a plurality of semiconductor chip modules 10.
Further, the first conductive member 43 and the second conductive member 53 include conductive pillars and/or metal plating layers. Specifically, the first via hole and the second via hole may be filled with a conductive post of metal, respectively, to achieve electrical connection of the upper and lower heat sink wiring boards. The metal layer may also be plated directly into the first and second vias.
Further, as shown in fig. 1, the lower surface of the heat sink 3 is soldered to the step surface 21 by the solder piece 7. The solder sheet 7 comprises spaced first and second solder sheets, wherein the first solder sheet corresponds to the first conductive layer 22 and the second solder sheet corresponds to the second conductive layer 23.
Specifically, the solder sheet 7 may be a low temperature solder sheet, the soldering temperature being lower than 200 ℃. The low-temperature solder ensures that the bonding structure of the semiconductor chip module 10 is not damaged. The solder sheet 7 may also be a solder paste as long as a solder temperature gradient can be formed.
Further, the upper surface of the heat sink 3 is provided with a gold-tin solder area, and the semiconductor chip 1 is soldered to the gold-tin solder area.
Further, as shown in fig. 1, the semiconductor device further includes a lens 8 and a mirror 9 corresponding to the semiconductor chip 1 one to one, and the lens 8 and the mirror 9 are fixed to a portion of the non-conductive layer on the insulating base 2. By adopting the insulating base 2, the lens 8 and the reflector 9 can be directly and fixedly connected on the insulating base 2 without arranging ceramic substrates at the bottoms of the lens 8 and the reflector 9, thereby simplifying the packaging process. While the portions of the non-conductive layer match the thermal expansion coefficients of the lens 8 and mirror 9, thermal failure may be reduced.
Further, the lens 8 and the mirror 9 are bonded to the insulating base 2 by an ultraviolet curing adhesive. The curing process of the lens 8 and the reflector 9 is simplified in an ultraviolet curing mode, and the position precision of the lens is improved.
In a specific embodiment, a process flow of a semiconductor laser pumping source package structure is further provided, which specifically includes:
step S1: the outline of the ceramic insulating base 2 with a plurality of step surfaces 21 is finished by adopting die forming and precise carving;
step S2: local metallization of the insulating base 2 is completed by adopting photoetching development or a stainless steel mask and combining a magnetron sputtering process, a first conducting layer 22 and a second conducting layer 23 are arranged on the step surface 21, and a third conducting layer 24 is arranged on the side wall of the step;
step S3: the heat sink 3 (including the first through hole and the second through hole) is manufactured by through hole electroplating;
step S4: the semiconductor chip 1 and the heat sink 3 are bonded through eutectic bonding and gold wires 6, and the preparation of the semiconductor chip module 10 is completed;
step S5: the semiconductor chip module 10 and the step surface 21 of the insulating base 2 complete the welding process through the solder sheet 7;
step S6: the lens 8 and the reflector 9 are adhered to the non-conductive layer part of the insulating base 2 by ultraviolet curing to complete the packaging of the semiconductor laser pumping source.
As can be seen from the above embodiments, the semiconductor laser pump source package structure provided by the present invention includes a plurality of semiconductor chips, further includes an insulating base and heat sinks corresponding to the semiconductor chips one by one, and each heat sink is fixedly connected with a semiconductor chip to form a semiconductor chip module; the insulating base is step-shaped, and each step surface is connected with a semiconductor chip module to form a semiconductor laser array. Meanwhile, the first conducting layer and the second conducting layer on the step surface are used for realizing the electric connection with the semiconductor chip modules, and the third conducting layer on the side wall of the step is used for realizing the series connection between the adjacent semiconductor chip modules. The semiconductor laser pumping source packaging structure cancels an aluminum wire bonding structure, does not need to provide an external electric connection structure, simplifies the packaging process, improves the packaging structure and improves the packaging reliability.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.
Claims (10)
1. A semiconductor laser pumping source packaging structure comprises a plurality of semiconductor chips and is characterized by further comprising an insulating base and heat sinks corresponding to the semiconductor chips one by one, wherein the insulating base is step-shaped, a first conducting layer and a second conducting layer are arranged on each step surface at intervals, and the first conducting layer on each step surface is electrically connected with the second conducting layer on the adjacent step surface through a third conducting layer arranged on the side wall of each step; the upper surface of the heat sink is connected to the semiconductor chip, and the lower surface of the heat sink is connected to the step surface.
2. The semiconductor laser pumping source package structure of claim 1, further comprising a first heat sink wiring board and a second heat sink wiring board which are arranged on the heat sink at intervals, wherein the lower surface of the first heat sink wiring board is connected to the first conductive layer, and the lower surface of the second heat sink wiring board is connected to the second conductive layer; one end of the semiconductor chip is fixedly connected to the upper surface of the first heat sink wiring board, and the other end of the semiconductor chip is electrically connected to the upper surface of the second heat sink wiring board through a gold wire.
3. The semiconductor laser pump source package structure of claim 2, wherein the first heat sink wiring board comprises a first upper heat sink wiring board disposed on an upper surface of the heat sink and a first lower heat sink wiring board disposed on a lower surface of the heat sink; the first upper heat sink wiring board is electrically connected to the first lower heat sink wiring board;
the second heat sink wiring board includes a second upper heat sink wiring board provided on an upper surface of the heat sink and a second lower heat sink wiring board provided on a lower surface of the heat sink; the second upper heat sink wiring board is electrically connected to the second lower heat sink wiring board.
4. The semiconductor laser pump source package structure of claim 3, further comprising a first via hole and a second via hole penetrating the heat sink, wherein a first conductive member is disposed in the first via hole, and the first upper heat sink wiring board is electrically connected to the first lower heat sink wiring board through the first conductive member; and a second conductive piece is arranged in the second through hole, and the second upper heat sink wiring board is electrically connected to the second lower heat sink wiring board through the second conductive piece.
5. The semiconductor laser pump source package structure of claim 4, wherein the first and second conductive members comprise conductive pillars and/or metallization layers.
6. The semiconductor laser pump source package structure of claim 1, wherein the lower surface of the heat sink is soldered to the step surface by a solder pad.
7. The semiconductor laser pump source package of claim 1, wherein the insulating mount is a ceramic mount.
8. The semiconductor laser pump source package structure of claim 1, wherein the heat sink has a gold-tin solder region on an upper surface thereof, and the semiconductor chip is soldered to the gold-tin solder region.
9. The semiconductor laser pump source package structure according to any one of claims 1 to 8, further comprising a lens and a mirror corresponding to the semiconductor chip one to one, wherein the lens and the mirror are fixed to the insulating base.
10. The semiconductor laser pump source package structure of claim 9, wherein the lens and the mirror are bonded to the insulating base by an ultraviolet curing adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921010280.9U CN209913232U (en) | 2019-07-01 | 2019-07-01 | Semiconductor laser pumping source packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921010280.9U CN209913232U (en) | 2019-07-01 | 2019-07-01 | Semiconductor laser pumping source packaging structure |
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| CN209913232U true CN209913232U (en) | 2020-01-07 |
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| CN201921010280.9U Active CN209913232U (en) | 2019-07-01 | 2019-07-01 | Semiconductor laser pumping source packaging structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114498284A (en) * | 2022-01-05 | 2022-05-13 | 深圳活力激光技术有限公司 | Semiconductor laser array packaging assembly and semiconductor laser |
| CN115302445A (en) * | 2022-10-11 | 2022-11-08 | 昆山三智达自动化设备科技有限公司 | Efficient assembly process of laser pumping source based on module unit |
-
2019
- 2019-07-01 CN CN201921010280.9U patent/CN209913232U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114498284A (en) * | 2022-01-05 | 2022-05-13 | 深圳活力激光技术有限公司 | Semiconductor laser array packaging assembly and semiconductor laser |
| CN115302445A (en) * | 2022-10-11 | 2022-11-08 | 昆山三智达自动化设备科技有限公司 | Efficient assembly process of laser pumping source based on module unit |
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