CN209418465U - Accurately measure the layer structural detail and semiconductor device fabrication equipment of temperature - Google Patents
Accurately measure the layer structural detail and semiconductor device fabrication equipment of temperature Download PDFInfo
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Abstract
The embodiments of the present invention disclose a kind of layer structural detail for accurately measuring temperature and semiconductor device fabrication equipment, including element body, thin film thermoelectric double-layer and temperature measuring point, temperature measurement is carried out to the thermometric region of element body by the temperature measuring unit of thin film thermoelectric double-layer.Thin film thermoelectric double-layer is close to element body as layer structure, higher by this contact measurement method precision of thin film thermoelectric double-layer compared to the non-contact measurement method of infrared survey, is able to reflect the true temperature of element body.External measuring device is facilitated to carry out temperature measurement to thermometric region by the temperature measuring point being arranged on thin film thermoelectric double-layer.In addition, thin film thermoelectric double-layer itself only has, several microns, small in size, quality is small, therefore thin film thermoelectric double-layer itself will not measure temperature and generate interference.
Description
Technical field
The utility model embodiment is related to technical field of manufacturing semiconductors, more particularly, to a kind of layer for accurately measuring temperature
Structural detail and semiconductor device fabrication equipment.
Background technique
There are the vacuum equipment such as CVD, PVD for much needing to heat, ALD, evaporation plating etc. in semiconductor processes.It is logical
Often by semiconductor chip directly or be placed on support plate be transmitted in vacuum chamber carry out heating and process, these equipment
The uniformity requirement of temperature control precision and heating for substrate in technical process is very high.Traditional technique is to directly adopt
Specific mechanical structure carries out temperature measurement or carries out temperature measurement by the method for infrared survey.
For example, in traditional method for carrying out temperature measurement to semiconductor chip, by semiconductor chip TC wafer
It is to be welded directly on substrate, be bonded or fixed needed for thermometric by processing some special mechanical structures on substrate
Temperature sensor, by the temperature of temperature sensor measurement semiconductor chip, in this measurement method temperature sensor itself and
Fixed structure and bonding, welding medium can generate interference to measured target surface temperature, therefore measured temperature cannot be accurate
Reaction measured target actual surface temperature.In addition, the mode of this fixed temperature sensor be easy to cause poor contact, make
It obtains measured temperature and does not have confidence level.Furthermore the consistency between more thermocouples can also analyze final data and cause to perplex.
For another example, the prior art is generally using non-contacting infrared measurement of temperature method measurement support plate or the temperature on the surface wafer.But due to
But it is easy to be by bias light and spuious in infrared temperature probe itself low measurement accuracy (usually at ± 3 DEG C) and measurement process
The influence of light and the temperature that cannot accurately measure and react support plate surface.
In actual application, inventor has found in semiconductor fabrication, mostly uses to the temperature measurement of element solid
Determine thermocouple and carry out temperature measurement, or temperature measurement is carried out by infrared survey method, temp measuring method is easy dry by the external world
It disturbs, precision is lower, therefore can not accurately measure the actual temperature of measured object.
Utility model content
The utility model will solve in existing semiconductor fabrication, mostly use fixed thermoelectricity to the temperature measurement of element
It is even to carry out temperature measurement, or temperature measurement is carried out by infrared survey method, temp measuring method is easy by external interference, precision
It is lower, therefore the problem of can not accurately measure the actual temperature of measured object.
Against the above technical problems, the embodiments of the present invention provide a kind of layer structural elements for accurately measuring temperature
Part, including element body, thin film thermoelectric double-layer and temperature measuring point；
The thin film thermoelectric double-layer is arranged on the element body, and the thin film thermoelectric double-layer includes at least one thermometric
Unit is provided with the temperature measuring point in each temperature measuring unit, by the temperature measuring point in temperature measuring unit to described
Thermometric region on element body carries out temperature measurement；
Wherein, to the either objective thermometric region on the element body, by carrying out temperature to target thermometric region
The target temperature measuring unit of acquisition carries out temperature measurement to target thermometric region.
The embodiments of the present invention provide a kind of semiconductor device fabrication equipment, including above-described accurately measure
The layer structural detail of temperature.
The embodiments of the present invention provide a kind of layer structural detail for accurately measuring temperature and semiconductor device fabrication
Equipment, including element body, thin film thermoelectric double-layer and temperature measuring point, by the temperature measuring unit of thin film thermoelectric double-layer to element base
The thermometric region of body carries out temperature measurement.Thin film thermoelectric double-layer is close to element body as layer structure, compared to infrared survey
Non-contact measurement method, it is higher by this contact measurement method precision of thin film thermoelectric double-layer, it is true to be able to reflect element body
Temperature.External measuring device is facilitated to carry out temperature to thermometric region by the temperature measuring point being arranged on thin film thermoelectric double-layer
Measurement.In addition, thin film thermoelectric double-layer itself only has, several microns, small in size, quality is small, therefore thin film thermoelectric double-layer itself is not yet
Temperature can be measured and generate interference.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is
Some embodiments of the utility model, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is the cross-section structure signal for the layer structural detail for accurately measuring temperature that the utility model one embodiment provides
Figure；
Fig. 2 be another embodiment of the utility model provide element body be semiconductor chip when layer structural detail knot
Structure schematic diagram；
Fig. 3 is the element body that the utility model another embodiment provides when being semiconductor chip, and layer structural detail cuts open
Face schematic diagram；
Fig. 4 is the element body that the utility model another embodiment provides when being semiconductor chip, and layer structural detail cuts open
Face decomposition diagram；
Fig. 5 be another embodiment of the utility model provide element body be semiconductor chip when layer structural detail system
Make the schematic diagram of insulating layer；
Fig. 6 be another embodiment of the utility model provide element body be semiconductor chip when layer structural detail system
Make the schematic diagram of thin film thermoelectric double-layer；
Fig. 7 be another embodiment of the utility model provide element body be support plate when layer structural detail production insulation
The schematic diagram of layer；
Fig. 8 is the element body that the utility model another embodiment provides when being support plate, and production thin film thermoelectric double-layer shows
It is intended to；
Fig. 9 be another embodiment of the utility model provide element body be support plate when diagrammatic cross-section.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
There are some process requirement precise control of temperature during semiconductors manufacture, for example, accurate control is sent into and is added
The temperature of substrate (wafer) in hot equipment, the temperature of the support plate of precise measurement carrying substrates or precise measurement some other yuan
The temperature of part is needed to realize and is accurately measured the temperature of these elements to realize the accurate control to temperature.In order to
It avoids directly by being mechanically fixed temperature sensor or when by infrared survey temperature, the temperature of measurement can not response element
This defect of true temperature, present embodiments provides a kind of layer structural detail for accurately measuring temperature, Fig. 1 be the present embodiment provides
The layer structural detail for accurately measuring temperature the schematic diagram of the section structure, referring to Fig. 1, this layer of structural detail includes element body
101, thin film thermoelectric double-layer 102 and temperature measuring point 103；
The thin film thermoelectric double-layer 102 is arranged on the element body 101, and the thin film thermoelectric double-layer 102 includes extremely
A few temperature measuring unit, the temperature measuring point 103 is provided in each temperature measuring unit, passes through the temperature in temperature measuring unit
Measurement point 103 carries out temperature measurement to the thermometric region on the element body 101；
Wherein, to the either objective thermometric region on the element body, by carrying out temperature to target thermometric region
The target temperature measuring unit of acquisition carries out temperature measurement to target thermometric region.
The element body in layer structural detail in the present embodiment is the element for needing to carry out temperature measurement, for example, element
It is substrate that matrix, which is in support plate or element body of the semiconductor fabrication for carrying substrates,.In order to facilitate progress temperature survey
Amount, the present embodiment make thin film thermoelectric double-layer and separation layer on element body, and forming layer structural detail passes through layer structural detail
In thin film thermoelectric double-layer can to the temperature in each thermometric region of element body carry out precise measurement.
Temperature measuring point in layer structural detail is arranged in each temperature measuring unit, is used to measure temperature for external
Measuring device is contacted with the temperature measuring point in temperature measuring unit, can be measured to the temperature in thermometric region.
Present embodiments provide a kind of layer structural detail for accurately measuring temperature, including element body, thin film thermoelectric double-layer
And temperature measuring point, temperature measurement is carried out to the thermometric region of element body by the temperature measuring unit of thin film thermoelectric double-layer.Film
Thermoelectricity double-layer is close to element body as layer structure and passes through film thermocouple compared to the non-contact measurement method of infrared survey
This contact measurement method precision of layer is higher, is able to reflect the true temperature of element body.By being arranged in thin film thermoelectric double-layer
On temperature measuring point facilitate external measuring device to thermometric region carry out temperature measurement.In addition, thin film thermoelectric double-layer itself is only
Have that several microns, small in size, quality is small, therefore thin film thermoelectric double-layer itself will not measure temperature and generate interference.
Further, on the basis of the above embodiments, each thermometric region on the element body passes through described
A temperature measuring unit on thin film thermoelectric double-layer carries out temperature measurement；
Each temperature measuring unit includes the first thermocouple wires, the second thermocouple wires, the first measurement point, the second measurement point
The temperature acquisition point formed with the overlapping region by first thermocouple wires and the second thermocouple wires, the temperature acquisition
Point is located in the thermometric region of the element body, and first thermocouple wires extend to described the by the temperature acquisition point
One measurement point, second thermocouple wires extend to second measurement point by the temperature acquisition point, pass through described first
Measurement point and second measurement point carry out temperature measurement to the thermometric region where the temperature acquisition point；
The temperature measuring point is provided in the first measurement point and the second measurement point of each temperature measuring unit；
Wherein, in the thin film thermoelectric double-layer, the temperature acquisition point of the target temperature measuring unit is located at target survey
In temperature area, surveyed by the temperature on the temperature measuring point and the second measurement point in the first measurement point of the target temperature measuring unit
Amount point carries out temperature measurement to target thermometric region；It forms the material of the first thermocouple wires and forms the second thermocouple cloth
The material of line is not identical.
Make temperature measuring point respectively in the first measurement point and the second measurement point, temperature measuring point can be for it is outer
The pad of the measuring device contact connect, or the interface or jack that are connect with external measuring device, the present embodiment pair
This is not particularly limited.
Each thermometric region corresponds to a temperature measuring unit, and guarantee carries out temperature measurement to each thermometric region.It is surveying
In warm unit, temperature acquisition o'clock is formed by the overlapping region of the first thermocouple wires and the second thermocouple wires, two different
Thermocouple material is overlapped in temperature acquisition point, after two kinds of thermocouple materials are heated, can generate potential in overlapping region, by the
One thermocouple wires and the second thermocouple wires are transferred to the first measurement point and the second measurement point.Pass through the first measurement point and second
Measurement point measures the potential generated in overlapping region, as the thermometric where the corresponding relationship temperature collection point of potential and temperature
The temperature in region.
A kind of layer structural detail for accurately measuring temperature is present embodiments provided, each thermometric region is respectively provided with corresponding survey
Warm unit guarantees to carry out temperature measurement to each thermometric region.Temperature measuring unit by different the first thermocouple wires of material and
Second thermocouple wires realize the temperature measurement to thermometric region, and structure is simple, and the temperature value of measurement has accurately reacted member
The true temperature of part matrix.
Further, on the basis of the various embodiments described above, the thin film thermoelectric double-layer further includes measured zone, each survey
The first measurement point and the second measurement point of warm unit are respectively positioned in the measured zone.
It further, further include separation layer, separation layer is covered on the thin film thermoelectric double-layer in addition to the measured zone
Except region on.
Further, on the basis of the various embodiments described above, the measured zone is located at the edge of the element body.
A kind of layer structural detail for accurately measuring temperature is present embodiments provided, by the first measurement point of each temperature measuring unit
It is converged in measured zone with the second measurement point, wiring is regular, facilitates production, is also convenient to use process.
It further, further include setting if the element body is conductive material on the basis of the various embodiments described above
Insulating layer between the element body and the thin film thermoelectric double-layer, the insulating layer for completely cut off the element body and
The contact of the thin film thermoelectric double-layer.
As temperature measuring unit indeed through the temperature measuring area where the potential temperature collection point of measurement temperature acquisition point
The temperature in domain, therefore the accuracy in order to guarantee measurement result, the position contacted with temperature measuring unit cannot be conductive material.This reality
Example is applied by the way that insulating layer is arranged between element body and thin film thermoelectric double-layer, avoids element body electric conductivity to temperature measuring unit
The influence of measurement result.
Further, the insulating layer covers on the region of the covering of the thin film thermoelectric double-layer on the element body.
The material of the insulating layer is Al2O3、SiO2Deng.
The making material of thin film thermoelectric double-layer includes but is not limited to common film thermocouple material.
A kind of layer structural detail for accurately measuring temperature is present embodiments provided, the case where element body is conductive material
Under, by the way that insulating layer is arranged, influence of the conductive material to temperature measuring unit measurement result is avoided, temperature measuring unit is improved and measures temperature
Accuracy.
Further, on the basis of the various embodiments described above, if the heat of the element body and the thin film thermoelectric double-layer
The coefficient of expansion mismatches, then further includes the transition zone being arranged between the element body and the thin film thermoelectric double-layer, described
Transition zone and the matched coefficients of thermal expansion of the element body and the thermal expansion system of the transition zone and the thin film thermoelectric double-layer
Number matching.
Further, the transition zone covers on the region of the covering of the thin film thermoelectric double-layer on the element body.
It will be appreciated that insulating layer and transition zone are also possible to structure from level to level while reaching insulation and adjusting thermal expansion system
Several functions, the present embodiment are not specifically limited this.
A kind of layer structural detail for accurately measuring temperature is present embodiments provided, by the way that transition zone buffer thin film thermoelectricity is arranged
Thermal expansion coefficient between double-layer and element body avoids heat distortion that temperature acquisition point is caused to be detached from element body and causes to measure
As a result inaccurate.
Further, on the basis of the various embodiments described above, the element body is semiconductor chip or is used to carry half
The support plate of semiconductor substrate.
The surface shape of the element body is circle, polygon, rectangle or square.
Further, the material of semiconductor chip is monocrystalline silicon, polysilicon, GaAs or copper；
Further, the support plate is graphite carrying plate, silicon carbide support plate or carbon composite support plate；The support plate includes
But it is not limited to the combinations such as assembled multiple material, welding, riveting；The shape of the support plate be circle, polygon, rectangle or
Square；The support plate process of surface treatment includes but is not limited to machining, vapor deposition, sputtering, CVD, pyrolytic coating, plasma spray
Apply etc..
Wafer bearing groove on support plate include but is not limited to it is common rectangular or round, insulating materials includes but is not limited to
Al2O3, film thermocouple making material includes but is not limited to common film thermocouple material.
Since film thermocouple thickness itself is generally more than 2 microns, measured target surface temperature is interfered minimum；
Thin film thermoelectric even mass is minimum, and small quality is fast to temperature-responsive, can preferably react the surface temperature of testee.
It further, further include separation layer on the basis of the various embodiments described above, the separation layer is arranged in the film
On thermoelectricity double-layer, be covered on the thin film thermoelectric double-layer in addition to the first measurement point of each temperature measuring unit and the second measurement point it
On outer region, for completely cutting off contact of the thin film thermoelectric double-layer with outside air.
Separation layer is arranged in thin film thermoelectric double-layer, only exposes the first measurement point of each temperature measuring unit and the second measurement point,
For making temperature measuring point in the first measurement point and the second measurement point, so that measuring each thermometric list by external temperature measuring equipment
The temperature of member measurement.Separation layer plays a protective role to thin film thermoelectric double-layer and element body, prevents thin film thermoelectric double-layer and member
Part matrix is corroded or is oxidized.
When being respectively (1) semiconductor chip or be (2) support plate with the element body of layer structural detail below, to layer structure
The specific structure of element is introduced.It should be noted that support plate is made as the layer knot in the present embodiment in actual production process
Constitutive element part obtains being placed on the substrate on support plate by the temperature of the measurement on support plate during support plate transports substrate
Temperature, the substrate being placed on support plate are not encapsulated as a layer structural detail.But before being put into production, need to measure support plate
Temperature and the vs. temperature being placed between the substrate on support plate, it is therefore desirable to pass through experiment measurement base before being put into production
The temperature of on piece.In this process, substrate package is layer structural detail by the method provided through this embodiment, thus to base
The temperature of piece measures.
Fig. 2-Fig. 6 is element body respectively when the being semiconductor chip layer structural schematic diagram of structural detail, diagrammatic cross-section,
Section decomposition diagram, the schematic diagram for making insulating layer and the schematic diagram for making thin film thermoelectric double-layer.Referring to figs. 2 and 3, work as member
When part matrix is semiconductor chip, preset on semiconductor chip 201 in the thermometric region of substrate top half and lower half portion
Thermometric region.Insulating layer 202 is set on semiconductor chip 201, thin film thermoelectric double-layer 203, film are set on the insulating layer
Thermoelectricity double-layer 203 includes two temperature measuring units, and one for the progress temperature measurement of substrate top half, another to be used for base
Piece lower half portion carries out temperature measurement.For any temperature measuring unit, including temperature acquisition point 2031, the first thermocouple wires
2032, the second thermocouple wires 2033, the first measurement point 2034 and the second measurement point 2035.By temperature acquisition point 2031 by thermometric
The temperature transition in region is electric signal, can measure thermometric region by the first measurement point 2034 and the second measurement point 2035
Temperature.204 are used as separation layer, the region other than measured zone are covered, for preventing element to be corroded or aoxidizing.Temperature is surveyed
Amount point setting is in the first measurement point 2034 and in the second measurement point 2035.
Fig. 7-Fig. 9 be respectively element body be support plate when layer structural detail production insulating layer schematic diagram, production film
The schematic diagram and diagrammatic cross-section of thermoelectricity double-layer.It include holding for the Wafer of carrying substrates referring to Fig. 8 and Fig. 9, on support plate 301
Slot 305 is carried, in order to which the temperature to the substrate being placed in every Wafer bearing groove measures, needs to carry every Wafer
Slot carries out temperature measurement.Therefore, in the thin film thermoelectric double-layer 303 on insulating layer 302, in every Wafer bearing groove 305
The temperature acquisition point of temperature measuring unit is arranged, and (two thermocouple wires extend to the first measurement point 3031 and second by temperature acquisition point
Measurement point 3032,3033 indicate the first thermocouple wires and the second thermocouple wires in Fig. 8, actually with two heat in Fig. 2
Galvanic couple wiring is identical, and the first thermocouple wires and the second thermocouple wires only each extend to accordingly after the overlapping of temperature acquisition point
Measurement point, be not shown specifically in Fig. 8), realize and temperature measurement carried out to every Wafer bearing groove 305.304 are used as separation layer,
The region other than measured zone is covered, for preventing element to be corroded or aoxidizing.Temperature measuring point setting is in the first measurement
On point 3031 and in the second measurement point 3032.
Further, on the basis of the various embodiments described above, the thin film thermoelectric double-layer by vapor deposition, sputter or wait from
Son spraying is formed, and the separation layer is formed by vapor deposition, sputtering or plasma spraying.
A kind of layer structural detail for accurately measuring temperature is present embodiments provided, element passes through steaming per structure from level to level
The techniques such as plating, sputtering or plasma spraying are formed, and ensure that the uniformity of layer structure.
On the other hand, a kind of semiconductor device fabrication equipment is present embodiments provided, including essence described in any of the above item
The layer structural detail of locating tab assembly temperature.
For example, wafer cutting equipment, the production equipment including the structure using support plate as carrying wafer.
A kind of semiconductor device fabrication equipment is present embodiments provided, which includes the layer knot for accurately measuring temperature
Constitutive element part, the element include element body, thin film thermoelectric double-layer and temperature measuring point, pass through the temperature measuring unit of thin film thermoelectric double-layer
Temperature measurement is carried out to the thermometric region of element body.Thin film thermoelectric double-layer is close to element body as layer structure, compared to red
The non-contact measurement method of external pelivimetry, it is higher by this contact measurement method precision of thin film thermoelectric double-layer, it is able to reflect element
The true temperature of matrix.Facilitate external measuring device to thermometric region by the temperature measuring point being arranged on thin film thermoelectric double-layer
Carry out temperature measurement.In addition, thin film thermoelectric double-layer itself only has, several microns, small in size, quality is small, therefore thin film thermoelectric double-layer
Itself will not measure temperature and generate interference.
When being respectively (1) semiconductor chip or be (2) support plate with the element body of layer structural detail below, to layer structure
The manufacturing process of element is introduced.
When the element body of layer structural detail is (1) semiconductor chip, referring to fig. 4, thin film thermoelectric double-layer can be regarded as
It is formed by the layer structure 203a where the first thermocouple wires and by the layer structure 203b where the second thermocouple wires.Such as Fig. 5-
Shown in 6, insulating layer is first formed on substrate and obtains structure as shown in Figure 5, then the first thermocouple wires are formed on the insulating layer
The layer structure 203a at place obtains structure as shown in FIG. 6, then re-forms the layer structure 203b where the second thermocouple wires
Structure as shown in Figure 2 is obtained, separation layer 204 is finally re-formed.
Specifically, the manufacturing process of element includes: when the element body of layer structural detail is (1) semiconductor chip
(a) it is laid out according to technique thermometric demand temperature collection point and makes thermocouple layout graph；
(b) it if necessary to production insulating layer or transition zone, then requires to utilize steaming according to thermocouple layout graph on substrate
The modes such as plating or sputtering, plasma spraying form insulating layer or transition zone, if you do not need to making insulating layer or transition zone then, then
It executes (c)；
(c) by sputtering or being deposited, the modes such as plasma spraying form the wherein pole of film thermocouple；
(d) by sputtering or being deposited, the modes such as plasma spraying form the other pole of film thermocouple；Thin film thermoelectric
Even two-stage intersection is the temperature measuring point formed according to thermometric demand；
(e) it makes or does not make above with modes such as sputtering, vapor deposition, plasma sprayings in thin film thermoelectric double-layer on demand
Corrosion-resistant or anti oxidation layer；
(f) after the compensating wire of identical polar being welded on reserved pad in the way of welding or metal bonding etc. i.e.
It can.
The layer structural detail made by the above method, more directly accurately can measure and react substrate surface temperature
Degree；Thin film thermoelectric double-layer itself will not measure temperature and generate interference because thin and small in size；Pass through insulation or transition zone
Adjustment is to match the thermal expansion coefficient of measured target, to keep film not easily to fall off；Since thin film thermoelectric double-layer is according to consistent
Technique processing and fabricating, thermocouple consistency itself can be relatively good, the available guarantor of consistency between thermocouple in the same substrate
Card；Than not needing to be bonded in traditional approach, temperature measuring point is welded, does not need to process various mechanical structures for fixing in substrate surface
Thermocouple.So that measurement result is more direct, it is more accurately, more reliable.
When the element body of layer structural detail is (2) support plate, as shown in Figure 7 and Figure 8, insulating layer is first formed on support plate
Structure as shown in Figure 7 is obtained, then thin film thermoelectric double-layer is formed on the insulating layer and obtains structure as shown in Figure 8, finally shape again
At separation layer 304.
Specifically, the manufacturing process of element includes: when the element body of layer structural detail is (2) support plate
(a) insulating layer is formed in the way of vapor deposition or sputtering, plasma spraying etc. on support plate matrix；
(b) then on the insulating layer face formed in the way of sputtering or vapor deposition, plasma spraying etc. film thermocouple and
Contact measurement point；
(c) it makes or does not make above with modes such as sputtering, vapor deposition, plasma sprayings in thin film thermoelectric double-layer on demand
Corrosion-resistant or anti oxidation layer.
In application process, after support plate is sent in vacuum chamber, by corresponding measurement in the way of machinery positioning
(i.e. first in Fig. 8 surveys for electrode or probe (measuring electrode material should be consistent with corresponding compensating conductor material) and contact measurement point
Amount point and the second measurement point) good contact is formed, it can be obtained support plate surface accurate temperature.
Finally, it should be noted that the above various embodiments is only to illustrate the technical solution of the embodiments of the present invention, and
It is non-that it is limited；Although the embodiments of the present invention are described in detail referring to foregoing embodiments, this field
Those of ordinary skill is it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments or right
Some or all of the technical features are equivalently replaced；And these are modified or replaceed, and do not make corresponding technical solution
Essence is detached from the range of each embodiment technical solution of the embodiments of the present invention.
Claims (10)
1. a kind of layer structural detail for accurately measuring temperature, which is characterized in that including element body, thin film thermoelectric double-layer and temperature
Measurement point；
The thin film thermoelectric double-layer is arranged on the element body, and the thin film thermoelectric double-layer includes at least one thermometric list
Member is provided with the temperature measuring point in each temperature measuring unit, by the temperature measuring point in temperature measuring unit to the member
Thermometric region on part matrix carries out temperature measurement；
Wherein, to the either objective thermometric region on the element body, by carrying out temperature acquisition to target thermometric region
Target temperature measuring unit to target thermometric region carry out temperature measurement.
2. the layer structural detail according to claim 1 for accurately measuring temperature, which is characterized in that on the element body
Each thermometric region carries out temperature measurement by a temperature measuring unit on the thin film thermoelectric double-layer；
Each temperature measuring unit include the first thermocouple wires, the second thermocouple wires, the first measurement point, the second measurement point and by
The temperature acquisition point that the overlapping region of first thermocouple wires and the second thermocouple wires is formed, the temperature acquisition point
In in the thermometric region of the element body, first thermocouple wires extend to described first by the temperature acquisition point and survey
Point is measured, second thermocouple wires extend to second measurement point by the temperature acquisition point, measure by described first
Point and second measurement point carry out temperature measurement to the thermometric region where the temperature acquisition point；
The temperature measuring point is provided in the first measurement point and the second measurement point of each temperature measuring unit；
Wherein, in the thin film thermoelectric double-layer, the temperature acquisition point of the target temperature measuring unit is located at the target temperature measuring area
In domain, pass through the temperature measuring point on the temperature measuring point and the second measurement point in the first measurement point of the target temperature measuring unit
Temperature measurement is carried out to target thermometric region；It forms the material of the first thermocouple wires and forms the second thermocouple wires
Material is not identical.
3. the layer structural detail according to claim 2 for accurately measuring temperature, which is characterized in that the thin film thermoelectric double-layer
It further include measured zone, the first measurement point and the second measurement point of each temperature measuring unit are respectively positioned in the measured zone.
4. the layer structural detail according to claim 3 for accurately measuring temperature, which is characterized in that the measured zone is located at
The edge of the element body.
5. the layer structural detail according to claim 1 for accurately measuring temperature, which is characterized in that if the element body is
Conductive material then further includes the insulating layer being arranged between the element body and the thin film thermoelectric double-layer, the insulating layer
For completely cutting off the contact of the element body with the thin film thermoelectric double-layer.
6. the layer structural detail according to claim 1 for accurately measuring temperature, which is characterized in that if the element body and
The thermal expansion coefficient of the thin film thermoelectric double-layer mismatches, then further includes being arranged in the element body and the film thermocouple
Transition zone between layer, the matched coefficients of thermal expansion of the transition zone and the element body and the transition zone and the film
The matched coefficients of thermal expansion of thermoelectricity double-layer.
7. the layer structural detail according to claim 3 for accurately measuring temperature, which is characterized in that the element body is half
Semiconductor substrate or support plate for bearing semiconductor substrate.
8. the layer structural detail according to claim 3 for accurately measuring temperature, which is characterized in that it further include separation layer, institute
It states separation layer to be arranged on the thin film thermoelectric double-layer, be covered on the thin film thermoelectric double-layer in addition to the of each temperature measuring unit
On region except one measurement point and the second measurement point, for completely cutting off contact of the thin film thermoelectric double-layer with outside air.
9. the layer structural detail according to claim 8 for accurately measuring temperature, which is characterized in that the thin film thermoelectric double-layer
By vapor deposition, sputtering perhaps plasma spraying formed the separation layer by vapor deposition, sputtering or plasma spraying formed.
10. a kind of semiconductor device fabrication equipment, which is characterized in that accurately measure including claim 1-9 is described in any item
The layer structural detail of temperature.
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| CN201822172797.XU CN209418465U (en) | 2018-12-24 | 2018-12-24 | Accurately measure the layer structural detail and semiconductor device fabrication equipment of temperature |
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| CN201822172797.XU Active CN209418465U (en) | 2018-12-24 | 2018-12-24 | Accurately measure the layer structural detail and semiconductor device fabrication equipment of temperature |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111525022A (en) * | 2020-04-22 | 2020-08-11 | 华东师范大学 | Thin film thermocouple and preparation method thereof |
| CN115014427A (en) * | 2021-03-05 | 2022-09-06 | 奥特斯(中国)有限公司 | Measuring physical properties of component carriers based on design data |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111525022A (en) * | 2020-04-22 | 2020-08-11 | 华东师范大学 | Thin film thermocouple and preparation method thereof |
| CN115014427A (en) * | 2021-03-05 | 2022-09-06 | 奥特斯(中国)有限公司 | Measuring physical properties of component carriers based on design data |
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Effective date of registration: 20210114 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: Room a129-1, No. 10, Zhongxing Road, science and Technology Park, Changping District, Beijing Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |