CN207265895U - DC Line Fault passes through MMC submodules and the transverter with the submodule - Google Patents
DC Line Fault passes through MMC submodules and the transverter with the submodule Download PDFInfo
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- CN207265895U CN207265895U CN201721087260.2U CN201721087260U CN207265895U CN 207265895 U CN207265895 U CN 207265895U CN 201721087260 U CN201721087260 U CN 201721087260U CN 207265895 U CN207265895 U CN 207265895U
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Abstract
The utility model provides a kind of DC Line Fault and passes through MMC submodules and the transverter with the submodule, and the utility model DC Line Fault, which passes through MMC submodules, mainly to be included：3 switch elements, 1 diode and 1 capacitor, wherein switch element structure is identical, corresponds to by 1 all-controlling power electronics device and is formed with 1 diode inverse parallel；The converter structure that MMC submodules are passed through with DC Line Fault is symmetrical three-phase structure, and the upper and lower bridge arm of each phase passes through MMC submodules by the DC Line Fault of more than 2 and is in series with inductance.The DC Line Fault of the utility model passes through MMC submodules and transverter device number with the submodule is few, control is simple, fault current can be quickly removed when monopole short trouble or bipolar short trouble occur for DC side, and can realize quickly restarting under transient fault, so that the DC Line Fault for completing system passes through and the stable operation of safeguards system.
Description
Technical field
It the utility model is related to a kind of MMC submodules.MMC submodules are passed through more particularly to a kind of DC Line Fault and are had
The transverter of the submodule.
Background technology
Modularization multi-level converter from the R.Marquardt by German Bundeswehr Munich universities in 2002 and
A.Lesnicar has obtained extensive concern both domestic and external after proposing, as the preferred change of current in high voltage direct current transmission project
Device.Compared with traditional voltage source converter, MMC mainly has the following advantages：
(1) the easy dilatation of modular construction, sets enough submodule quantities to meet the need of different voltages and power grade
Ask；
(2) redundancy submodule makes system possess preferable troubleshooting capability and reliability；
(3) output waveform quality is higher, and harmonic content is low.
Straight-flow system is not since electric current has zero crossing, and fault current climbing is higher when DC side breaks down, and can cause
Larger overcurrent, seriously endangers the security of system, and the removing difficulty of fault current is more than AC system, therefore, directly
The short trouble of Flow Line is one of key issue of MMC urgent need to resolve.Cut-off breaker is that a kind of tradition removes fault current
Means, comprising exchange side breaker and DC side breaker two ways, wherein dc circuit breaker can quickly remove failure electricity
Stream, but suitable for high-power occasion dc circuit breaker exploitation and develop there are larger difficulty.In addition, two kinds disconnected
Road device all there are reboot time it is longer the problem of, it is weaker to the disposal ability of the transient fault of DC side.Compared with breaker, electricity
The switching speed of power electronic device is very fast, therefore, in order to reduce research and development difficulty, improves the dynamic responding speed of system, can be right
The submodule of MMC carries out functions expanding, submodule itself is possessed DC Line Fault ride-through capability.
Submodule topology is half-bridge submodule topology used by common MMC in engineering, even if during system jam
Locking pulse signal, the backward dioded of half-bridge submodule can still provide current path, cause fault current constantly to increase.Can be clear
Except it is most representational in the MMC of fault current be full-bridge submodule and clamping type Shuangzi module.Full-bridge submodule has 4
Switching tube, exportable 0, three level of+U ,-U, and-U belongs to unnecessary state, actual full-bridge submodule in MMC practical applications
Block is equal to two level submodules, which can remove fault current by locking pulse signal, but switching tube is a
Number is more, higher to the coherence request of device trigger signal；Clamper Shuangzi module device has 5 switching tubes, exportable altogether
0, U, tri- level of 2U, are compared with full-bridge submodule, which increases, and device number substantially drops
It is low, but the coupling of the sub-modular structure adds the complexity and control difficulty of system.
Based on the above problem, a kind of control and the fairly simple MMC submodules for removing fault current of structure are studied
Topology, is conducive to the simplification of whole system structure and control system.
The content of the invention
Technical problem to be solved in the utility model is to provide a kind of control simply and can quickly remove fault current
DC Line Fault pass through MMC submodules and with the submodule transverter.
Technical solution is used by the utility model：A kind of DC Line Fault, which passes through MMC submodules, includes the company of being sequentially connected in series
The first switch K connect1, the 4th diode D4With second switch K2, the first switch K1The other end connect the first capacitance C1's
One end and the 3rd switch K3One end, the second switch K2With the 4th diode D4Connected intersection point connects the first capacitance C1
The other end, the second switch K2The other end connection the 3rd switch K3The other end, the first switch K1With the four or two pole
Pipe D4Connected intersection point forms the cathode that DC Line Fault passes through MMC submodules, the second switch K2With the described 3rd switch K3Phase
Intersection point even forms the anode that DC Line Fault passes through MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspond to connection diode D1/D2/D3Anode, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Cathode, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Cathode jointly connection the 4th diode D4Anode, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Anode, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Cathode jointly connection the 4th diode D4Cathode, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Anode jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Cathode.
All-controlling power electronics device T described in the utility model1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
Described has the transverter that DC Line Fault passes through MMC submodules, includes the A phases bridge arm being in parallel, B phase bridge arms
With C phase bridge arms, the A phase bridge arms are connected in series and are formed by bridge arm in A phases and A phase lower bridge arms, and bridge arm is remote in the A phases
The cathode of one end connection dc bus of A phase lower bridge arms, one end connection direct current of the A phases lower bridge arm away from bridge arm in A phases are female
Line anode, the intersection point that bridge arm is connected with A phase lower bridge arms in the A phases draw a phases of three phase mains, and the B phase bridge arms are by B
Bridge arm and B phase lower bridge arms are connected in series composition in phase, and the one end of bridge arm away from B phase lower bridge arms connects dc bus in the B phases
Cathode, the one end of the B phases lower bridge arm away from bridge arm in B phases connects dc bus anode, in the B phases under bridge arm and B phases
The intersection point that bridge arm is connected draws the b phases of three phase mains, and the C phase bridge arms are made of bridge arm in C phases and C phase lower bridge arms, institute
The cathode of one end connection dc bus of the bridge arm away from C phase lower bridge arms in C phases is stated, the C phases lower bridge arm is away from bridge arm in C phases
One end connects dc bus anode, and the intersection point that bridge arm is connected with C phase lower bridge arms in the C phases draws the c phases of three phase mains, it is special
Sign is, bridge arm in the A phases, A phases lower bridge arm, bridge arm in B phases, B phases lower bridge arm, bridge arm and C phase lower bridge arm structures in C phases
It is identical, it is that MMC submodules and inductance (L1/L4/L2/L5/L3/L6) series connection company are passed through by the DC Line Fault of more than 2
Composition is connect, each DC Line Fault, which passes through MMC submodules, to be included：The first switch K being sequentially connected in series1, the 4th diode D4
With second switch K2, the first switch K1The other end connect the first capacitance C1One end and the 3rd switch K3One end, institute
State second switch K2With the 4th diode D4Connected intersection point connects the first capacitance C1The other end, the second switch K2It is another
The 3rd switch K of one end connection3The other end, the first switch K1With the 4th diode D4Connected intersection point forms DC Line Fault
Pass through the cathode of MMC submodules, the second switch K2With the described 3rd switch K3Connected intersection point forms DC Line Fault and passes through
The anode of MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspond to connection diode D1/D2/D3Anode, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Cathode, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Cathode jointly connection the 4th diode D4Anode, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Anode, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Cathode jointly connection the 4th diode D4Cathode, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Source electrode jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Cathode.
Equally, the utility model there is DC Line Fault to pass through in the transverter of MMC submodules, the full-control type electric power
Electronic device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor (IGCT), or
Gate level turn-off thyristor (GTO), or electron injection enhancement gate transistor (IEGT).
The DC Line Fault of the utility model passes through MMC submodules and the transverter with the submodule, submodule control letter
It is single, can directly transplanting half-bridge submodule control method, reduce the research and development difficulty of control system, and bridge-type submodule phase
Than submodule reduces an all-controlling power electronics device under equal voltage class, is conducive to the hardware cost of control system；
Compared with clamper Shuangzi module, reduce the complexity of control and structure, reduce further the construction cost of MMC.
Brief description of the drawings
Fig. 1 is the schematic diagram that the utility model DC Line Fault passes through MMC submodules；
Fig. 2 is the composition block diagram for the transverter that the utility model passes through MMC submodules with DC Line Fault；
Fig. 3 is that electric current flows into MMC submodule current paths when anode flows out from MMC submodules cathode in DC Line Fault；
Fig. 4 is that electric current flows into MMC submodule current paths when cathode flows out from MMC submodules anode in DC Line Fault.
In figure
1：Bridge arm 2 in A phases：Bridge arm in B phases
3：Bridge arm 4 in C phases：A phase lower bridge arms
5：B phases lower bridge arm 6：C phase lower bridge arms
Embodiment
MMC submodules are passed through with reference to embodiment and attached drawing to a kind of DC Line Fault of the utility model to make specifically
It is bright.
As shown in Figure 1, a kind of DC Line Fault of the utility model passes through MMC submodules, including be sequentially connected in series
One switch K1, the 4th diode D4With second switch K2, the first switch K1The other end connect the first capacitance C1One end with
And the 3rd switch K3One end, the second switch K2With the 4th diode D4Connected intersection point connects the first capacitance C1It is another
End, the second switch K2The other end connection the 3rd switch K3The other end, the first switch K1With the 4th diode D4Phase
Intersection point even forms the cathode that DC Line Fault passes through MMC submodules, the second switch K2With the described 3rd switch K3Connected friendship
Point forms the anode that DC Line Fault passes through MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspond to connection diode D1/D2/D3Anode, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Cathode, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Cathode jointly connection the 4th diode D4Anode, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Anode, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Cathode jointly connection the 4th diode D4Cathode, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Anode jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Cathode.
All-controlling power electronics device T described in the utility model1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
A kind of DC Line Fault of the utility model passes through MMC submodules, MMC submodule topologys is possessed failure self-cleaning
The key of power is the first all-controlling power electronics device T1, the first diode D1, the second all-controlling power electronics device T2,
Two diode D2, the 3rd all-controlling power electronics device T3, the 3rd diode D3And the 4th diode D4Link position and company
Connect mode.All switching tube signals of locking when DC Line Fault occurs for system, under submodule diode action, according to submodule
Different current directions introduces the first capacitance of submodule C into current path1Voltage suppress line voltage.In current path
Diode will be forced closed under backward voltage effect, so as to remove fault current.
During normal work, the first all-controlling power electronics device T1Trigger signal is always 1, the second full-control type power electronic
Device T2With the 3rd all-controlling power electronics device T3Using the logical triggering signal of complementary conducting, i.e. the second full-control type electricity
Power electronic device T23rd all-controlling power electronics device T when opening3Turn off, under the operating mode, switching tube difference pulse signal
Combination make submodule two kinds of level of exportable 0, U.
As shown in Fig. 2, the utility model has the transverter that DC Line Fault passes through MMC submodules, include and be in parallel
A phases bridge arm, B phases bridge arm and C phase bridge arms, the A phase bridge arms are to be connected in series structure by bridge arm 1 in A phases and A phases lower bridge arm 4
Into the cathode of one end connection dc bus of the remote A phases lower bridge arm 4 of bridge arm 1 in the A phases, the A phases lower bridge arm 4 is away from A
One end connection dc bus anode of bridge arm 1 in phase, the intersection point extraction three-phase that bridge arm 1 is connected with A phases lower bridge arm 4 in the A phases
The a phases of power supply, the B phase bridge arms are connected in series and are formed by bridge arm 2 in B phases and B phases lower bridge arm 5, bridge arm 2 in the B phases
Remote B phases lower bridge arm 5 one end connection dc bus cathode, one end of bridge arm 2 in the remote B phases of the B phases lower bridge arm 5
Dc bus anode is connected, the b phases for the intersection point extraction three phase mains that bridge arm 2 is connected with B phases lower bridge arm 5 in the B phases are described
C phase bridge arms are made of bridge arm 3 in C phases and C phases lower bridge arm 6, and one end of the remote C phases lower bridge arm 6 of bridge arm 3 connects in the C phases
Connect the cathode of dc bus, one end connection dc bus anode of bridge arm 3, the C phases in the remote C phases of the C phases lower bridge arm 6
The intersection point that upper bridge arm 3 is connected with C phases lower bridge arm 6 draws the c phases of three phase mains.
Bridge arm 1 in the A phases, A phases lower bridge arm 4, bridge arm 2 in B phases, B phases lower bridge arm 5, bridge under bridge arm 3 and C phases in C phases
6 structure of arm is identical, is to pass through MMC submodules A and an inductance L1/L4/L2/L5/L3/L6 by the DC Line Fault of more than 2
Composition is connected in series, each DC Line Fault passes through MMC submodules A to be included as shown in Figure 1：Including be sequentially connected in series
One switch K1, the 4th diode D4With second switch K2, the first switch K1The other end connect the first capacitance C1One end with
And the 3rd switch K3One end, the second switch K2With the 4th diode D4Connected intersection point connects the first capacitance C1It is another
End, the second switch K2The other end connection the 3rd switch K3The other end, the first switch K1With the 4th diode D4Phase
Intersection point even forms the cathode that DC Line Fault passes through MMC submodules, the second switch K2With the described 3rd switch K3Connected friendship
Point forms the anode that DC Line Fault passes through MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspond to connection diode D1/D2/D3Anode, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Cathode, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Cathode jointly connection the 4th diode D4Anode, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Anode, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Cathode jointly connection the 4th diode D4Cathode, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Anode jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Cathode.
Equally, the utility model there is DC Line Fault to pass through in the transverter of MMC submodules, the full-control type electric power
Electronic device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor (IGCT), or
Gate level turn-off thyristor (GTO), or electron injection enhancement gate transistor (IEGT).
Fig. 3 for DC line generation short trouble (including monopolar grounding fault and bipolar short trouble), all open afterwards by locking
The current path of pipe trigger signal is closed, submodule electric current is flowed into by cathode at this time, and anode outflow, electric current flows through the first diode D1
→ the first capacitance C1→ the second diode D2, fault current is the first capacitance C1Charging.The structure is extended in whole MMC, is closed
The sum of all switching tubes in lock system, the capacitance voltage on current path be more than exchange side voltage (monopole is phase voltage when being grounded,
It is line voltage during bipolar short circuit) absolute value of amplitude, all diodes will bear backward voltage and in the voltage in current path
The lower cut-off of effect, so that current path is blocked, by controlling switch pipe come complete under the action of it need not disconnect exchange side breaker
DC Line Fault into system passes through.
Fig. 4 for DC line generation short trouble (including monopolar grounding fault and bipolar short trouble), all open afterwards by locking
The trigger signal of pipe is closed, submodule electric current is flowed into by anode at this time, cathode flows out, and electric current is through the 3rd diode D3→ the first capacitance
C1→ the four diode D4, the first capacitance C1Charging, which is extended in whole MMC, all switching tubes in block sytem,
The sum of capacitance voltage on current path is more than exchange side voltage (monopole is phase voltage when being grounded, and is line voltage when bipolar short-circuit)
Positive amplitude, all switching tubes bear backward voltage cut-off in current path, block current path, break that need not disconnect exchange side
Realize that the DC Line Fault of system passes through by controlling switch pipe signal under the action of the device of road.
Claims (6)
1. a kind of DC Line Fault passes through MMC submodules, it is characterised in that including be sequentially connected in series first switch (K1),
Four diodes (D4) and second switch (K2), the other end of the first switch (K1) connect the first capacitance (C1) one end and
One end of 3rd switch (K3), the second switch (K2) intersection point connected with the 4th diode (D4) are connected the first capacitance (C1)
The other end, the second switch (K2) the other end connection the 3rd switch (K3) the other end, the first switch (K1) with
The connected intersection point of 4th diode (D4) forms the cathode that DC Line Fault passes through MMC submodules, the second switch (K2) and institute
State the connected intersection point of the 3rd switch (K3) and form the anode that DC Line Fault passes through MMC submodules.
2. DC Line Fault according to claim 1 passes through MMC submodules, it is characterised in that the first switch (K1),
Second switch (K2), the 3rd switch (K3) structure are identical, are corresponding by an all-controlling power electronics device (T1/T2/T3)
Connected and composed with diode (D1/D2/D3) inverse parallel, i.e. the leakage of the all-controlling power electronics device (T1/T2/T3)
The anode of extremely corresponding connection diode (D1/D2/D3), the source electrode of the all-controlling power electronics device (T1/T2/T3), which corresponds to, to be connected
Connect the cathode of diode (D1/D2/D3), wherein, the source electrode of the all-controlling power electronics device (T1) in first switch (K1) and
The cathode of diode (D1) connects the anode of the 4th diode (D4), and the first full-control type electric power in first switch (K1) jointly
The drain electrode of electronic device (T1) and the anode of the first diode (D1) one end of the first capacitance of connection (C1) and the 3rd are opened jointly
Close the drain electrode of the 3rd all-controlling power electronics device (T3) in (K3) and the anode of the 3rd diode (D3), second switch (K2)
In all-controlling power electronics device (T2) source electrode and the second diode (D2) cathode jointly connection the 4th diode (D4)
Cathode, and the drain electrode of the second all-controlling power electronics device (T2) in second switch (K2) and the second diode (D2) is negative
The extremely common source electrode for connecting the 3rd all-controlling power electronics device (T3) in the 3rd switch (K3) and the 3rd diode (D3)
Cathode.
3. DC Line Fault according to claim 2 passes through MMC submodules, it is characterised in that the full-control type electric power electricity
Sub- device (T1/T2/T3) is insulated gate bipolar transistor, or integrated gate commutated thyristor, or gate electrode capable of switching off is brilliant
Brake tube, or electron injection enhancement gate transistor.
4. a kind of DC Line Fault with described in claim 1 passes through the transverter of MMC submodules, include the A phases being in parallel
Bridge arm, B phases bridge arm and C phase bridge arms, the A phase bridge arms are to be connected in series structure by bridge arm (1) in A phases and A phases lower bridge arm (4)
Into the cathode of one end connection dc bus of the bridge arm (1) away from A phases lower bridge arm (4), the A phases lower bridge arm (4) in the A phases
One end connection dc bus anode away from bridge arm (1) in A phases, the friendship that bridge arm (1) is connected with A phases lower bridge arm (4) in the A phases
Point draws a phases of three phase mains, and the B phase bridge arms are connected in series and are formed by bridge arm (2) in B phases and B phases lower bridge arm (5),
The cathode of one end connection dc bus of the bridge arm (2) away from B phases lower bridge arm (5), the B phases lower bridge arm (5) are remote in the B phases
One end of bridge arm (2) connects dc bus anode in B phases, and bridge arm (2) draws with the intersection point that B phases lower bridge arm (5) is connected in the B phases
Go out the b phases of three phase mains, the C phase bridge arms are made of bridge arm (3) in C phases and C phases lower bridge arm (6), bridge arm in the C phases
(3) cathode of one end connection dc bus away from C phases lower bridge arm (6), the C phases lower bridge arm (6) is away from bridge arm (3) in C phases
One end connection dc bus anode, the intersection point extraction three phase mains that bridge arm (3) is connected with C phases lower bridge arm (6) in the C phases
C phases, it is characterised in that bridge arm (1) in the A phases, A phases lower bridge arm (4), bridge arm (2), B phases lower bridge arm (5), C phases in B phases
Upper bridge arm (3) is identical with C phases lower bridge arm (6) structure, is to pass through MMC submodules (A) and one by the DC Line Fault of more than 2
Inductance (L1/L4/L2/L5/L3/L6) is connected in series composition, each DC Line Fault, which passes through MMC submodules (A), to be included：Including
The first switch (K1) that is sequentially connected in series, the 4th diode (D4), second switch (K2), the first switch (K1) it is another
One end of end the first capacitance of connection (C1) and the 3rd switch (K3), the second switch (K2) are connected with the 4th diode (D4)
Intersection point connect the first capacitance (C1) the other end, the second switch (K2) the other end connection the 3rd switch (K3) it is another
End, the intersection point that affiliated first switch (K1) is connected with the 4th diode (D4) form the cathode that DC Line Fault passes through MMC submodules,
The intersection point composition DC Line Fault that the second switch (K2) is connected with the described 3rd switch (K3) passes through the anode of MMC submodules.
5. the transverter according to claim 4 that MMC submodules are passed through with DC Line Fault, it is characterised in that described
First switch (K1), second switch (K2), the 3rd switch (K3) structure are identical, are by an all-controlling power electronics device
(T1/T2/T3) correspondence is connected and composed with diode (D1/D2/D3) inverse parallel, i.e. the all-controlling power electronics device
(T1/T2/T3) drain electrode corresponds to the anode of connection diode (D1/D2/D3), the all-controlling power electronics device (T1/T2/
T3 source electrode) corresponds to the cathode of connection diode (D1/D2/D3), wherein, the full-control type power electronic device in first switch (K1)
The source electrode of part (T1) and the cathode of diode (D1) connect the anode of the 4th diode (D4) jointly, and in first switch (K1)
The drain electrode of first all-controlling power electronics device (T1) and the anode of the first diode (D1) connect the first capacitance (C1) jointly
The drain electrode of one end and the 3rd all-controlling power electronics device (T3) in the 3rd switch (K3) and bearing for the 3rd diode (D3)
Pole, the source electrode of all-controlling power electronics device (T2) and the cathode of the second diode (D2) in second switch (K2) connect jointly
The cathode of 4th diode (D4), and the drain electrode and second of the second all-controlling power electronics device (T2) in second switch (K2)
The anode of diode (D2) source electrode of the 3rd all-controlling power electronics device (T3) in the switch of connection the 3rd (K3) and the jointly
The cathode of three diodes (D3).
6. the transverter according to claim 5 that MMC submodules are passed through with DC Line Fault, it is characterised in that described
All-controlling power electronics device (T1/T2/T3) is insulated gate bipolar transistor, or integrated gate commutated thyristor, or
Gate level turn-off thyristor, or electron injection enhancement gate transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721087260.2U CN207265895U (en) | 2017-08-29 | 2017-08-29 | DC Line Fault passes through MMC submodules and the transverter with the submodule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721087260.2U CN207265895U (en) | 2017-08-29 | 2017-08-29 | DC Line Fault passes through MMC submodules and the transverter with the submodule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207265895U true CN207265895U (en) | 2018-04-20 |
Family
ID=61923177
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| Application Number | Title | Priority Date | Filing Date |
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| CN201721087260.2U Expired - Fee Related CN207265895U (en) | 2017-08-29 | 2017-08-29 | DC Line Fault passes through MMC submodules and the transverter with the submodule |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659911A (en) * | 2018-12-13 | 2019-04-19 | 华北电力大学 | A kind of failure self-cleaning MMC topology suitable for multiterminal element and DC grid |
| CN111682576A (en) * | 2020-06-22 | 2020-09-18 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Three-phase series CA-MMC (CA-Modular multilevel converter) with direct-current fault ride-through capability in flexible direct-current power transmission system and system |
| CN113972633A (en) * | 2021-10-21 | 2022-01-25 | 广东电网有限责任公司 | Modular multilevel converter submodule topological structure |
-
2017
- 2017-08-29 CN CN201721087260.2U patent/CN207265895U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659911A (en) * | 2018-12-13 | 2019-04-19 | 华北电力大学 | A kind of failure self-cleaning MMC topology suitable for multiterminal element and DC grid |
| CN111682576A (en) * | 2020-06-22 | 2020-09-18 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Three-phase series CA-MMC (CA-Modular multilevel converter) with direct-current fault ride-through capability in flexible direct-current power transmission system and system |
| CN113972633A (en) * | 2021-10-21 | 2022-01-25 | 广东电网有限责任公司 | Modular multilevel converter submodule topological structure |
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