CN206061136U - Silicon microphone - Google Patents
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- CN206061136U CN206061136U CN201620956132.6U CN201620956132U CN206061136U CN 206061136 U CN206061136 U CN 206061136U CN 201620956132 U CN201620956132 U CN 201620956132U CN 206061136 U CN206061136 U CN 206061136U
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- silicon microphone
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000009413 insulation Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000004044 response Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 230000005534 acoustic noise Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
This utility model provides a kind of silicon microphone, including：Substrate with the operatic tunes, is provided with multiple vibrating diaphragm fixtures of insulation in the substrate at the operatic tunes edge；On each vibrating diaphragm fixture, and the conductive diaphragm of the operatic tunes is covered, wherein, the central area of the conductive diaphragm has the first comb；The central electrode part of the central area is installed in, including：Intersect, and second comb in gap left between first comb with first comb；Wherein, the relative face of first comb and the second comb constitutes two electrodes of electric capacity.This utility model is easily caused the two poles of the earth adhesion when can solve the problems, such as that conductive diaphragm vibrates.
Description
Technical field
This utility model is related to mike field, more particularly to a kind of silicon microphone.
Background technology
Mike is widely applied to mobile phone, video camera etc. as a kind of device that acoustical signal is converted to the signal of telecommunication
In intelligent terminal.
With the development and the continuous progress of high-tech technology of society, micro machine technology (Micro Electro
Mechanical Systems, abbreviation MEMS) gradually incorporate into the production field of mike, MEMS realizes various biographies
The miniaturization of sensor and cost degradation, and occurred the signal conversion of such as MEMS silicon microphone in intelligent terminal
Device.
The conductive diaphragm of existing silicon microphone with below carry on the back chamber electrode surface constitute electrode, the conductive diaphragm it is unique
Direction is identical with direction of an electric field.This is caused bias is too big or during the too big sound intensity, the conductive diaphragm can with electrode surface adhesive, from
And cause silicon wheat not work.In order to avoid inhaling film phenomenon, bias can not be too high, equally, also reduces sensitivity and letter noise ratio.
Therefore, how to solve above-mentioned technological deficiency becomes the direction that those skilled in the art are devoted to studying.
Utility model content
This utility model embodiment provides a kind of silicon microphone, easy during conductive diaphragm vibration in prior art for solving
Cause the problem of the two poles of the earth adhesion.
Based on above-mentioned purpose, this utility model provides a kind of silicon microphone, including：Substrate with the operatic tunes, in the sound
The substrate of cavity edge is provided with multiple vibrating diaphragm fixtures of insulation；On each vibrating diaphragm fixture, and cover the sound
The conductive diaphragm in chamber, wherein, the central area of the conductive diaphragm has the first comb；It is installed in the center of the central area
Electrode piece, is intersected comprising first comb, and second comb in gap is left between first comb；Wherein,
The relative face of first comb and the second comb constitutes two electrodes of electric capacity.
Preferably, in the substrate also fixed insulation electrode fixuture, to support the central electrode part；In described
Heart electrode part is contained in from the operatic tunes edge and extends to the extension component of the central area, and exists positioned at the extension component
End, the comb part comprising the second comb of the central area；Wherein, the extension component and comb part are fixed
On the electrode fixuture；Between institute's extension component and the conductive diaphragm with first comb and the second comb it
Between gap identical gap；The second comb in the comb part is intersected with first comb.
Preferably, each vibrating diaphragm fixture, the conductive diaphragm, each first comb and each second comb are equal
Along the central electrode part axial symmetry.
Preferably, also include：The first electrode post being located on the central electrode part；And/or be located at the vibrating diaphragm and fix
The second electrode post on the conductive diaphragm at part.
Preferably, at least central area of the conductive diaphragm is coated with stress film, covers the first of the stress film
Comb and do not cover stress film the second comb between have difference in height.
Preferably, the quantity of first comb and the second comb is for multiple, and each first comb and the second comb
The electric capacity for being constituted is axisymmetricly or circumference is symmetrical.
Preferably, the operatic tunes is by the multiple acoustic aperture for carrying on the back chamber and be arranged on back of the body chamber top surface and communicate with the back of the body chamber
Constitute；Film layer air gap is separated between the vibrating diaphragm fixture between the conductive diaphragm and the acoustic aperture.
Preferably, also include：In the film layer air gap, the elastic component of the conductive diaphragm, the elastic component phase are affixed on
Retain predetermined interval adjacent to the vibrating diaphragm fixture and with the vibrating diaphragm fixture.
Preferably, the conductive diaphragm is provided with pore.
Preferably, first comb and the second comb pass through dry etching synchronous forming；The conductive diaphragm is monocrystalline
Silicon materials.
As described above, silicon microphone of the present utility model, has the advantages that：By in conductive diaphragm central area
The electrode pair of comb teeth-shaped is set, the area of electrode can be increased, capacitance is improved, and can solve it is easy when conductive diaphragm vibrates
Cause the problem of the two poles of the earth adhesion；Meanwhile, by comb-like electrode to being arranged on the central area of conductive diaphragm, rather than it is arranged on conduction
The marginal area of vibrating diaphragm, moreover it is possible to guarantee that conductive diaphragm produces effectively response in micro-vibration, reduce conductive diaphragm edge and fix
The situation that the vibration for being brought is obstructed；In addition, the operatic tunes is constituted using back of the body chamber and acoustic aperture mode, to reduce cup appearance to greatest extent
Product, it is ensured that excellent high frequency response；For the ease of producing, central electrode part and conductive diaphragm are formed using dry etching between having
Every the first comb and the second comb；Additionally, the central electrode part extends to the center on the electrode fixuture
Region, extension also constitute electrode with conductive diaphragm, so further increase the capacity of electric capacity；On the conductive diaphragm
Pore is set, is easy to accelerate aerofluxuss during production, is effectively reduced the residual stress of conductive diaphragm, improve the sensitivity of conductive diaphragm.
Description of the drawings
For the technical scheme being illustrated more clearly that in this utility model embodiment, below will be to this utility model embodiment
Needed for description, accompanying drawing to be used is briefly described, it should be apparent that, drawings in the following description are only that this practicality is new
Some embodiments of type, for those of ordinary skill in the art, on the premise of not paying creative work, can be with root
Other accompanying drawings are obtained according to the content and these accompanying drawings of this utility model embodiment.
Fig. 1 is the overlooking the structure diagram of one embodiment of silicon microphone of the present utility model.
Fig. 2 is the structural representation of a preferred embodiment of substrate in silicon microphone of the present utility model.
Fig. 3 is the structural representation of a preferred embodiment of silicon microphone of the present utility model.
Fig. 4 is the enlarged drawing in B regions in Fig. 3.
Fig. 5 is the profile along central electrode part of silicon microphone shown in Fig. 3.
Fig. 6 is the profile along second electrode post place centrage of silicon microphone shown in Fig. 3.
Specific embodiment
Technique effect to make this utility model technical problem for solving, the technical scheme for adopting and reach is clearer,
The technical scheme of this utility model embodiment is described in further detail below in conjunction with accompanying drawing, it is clear that described reality
Apply the example only a part of embodiment of this utility model, rather than the embodiment of whole.Based on the embodiment in this utility model,
The every other embodiment obtained under the premise of creative work is not made by those skilled in the art, belongs to this practicality new
The scope of type protection.
Refer to Fig. 1.This utility model provides a kind of silicon microphone.The silicon microphone is applied to mobile device, vehicle-mounted
Equipment, electronic toy, speech robot people etc..The silicon microphone is by semiconductor manufacturing facility through the etching on substrate, deposition
Etc. technique global formation, to realize the high integration and micro-volume of mike.
The silicon microphone includes：Substrate 11, conductive diaphragm 12, and central electrode part 13.
The substrate 11 has the operatic tunes.Wherein, substrate of the substrate 11 for porous silica material, its thickness are 400～420
Micron.A cavity is engraved out using techniques such as etchings in the substrate 11, penetrating acoustic aperture is provided with the bottom of the cavity.Institute
State cavity and acoustic aperture is the operatic tunes.
In the substrate 11, the edge of the cavity be provided with multiple vibrating diaphragm fixtures 14 of insulation.Wherein, the vibrating diaphragm
Fixture 14 is silicon oxide insulation material.
Preferably, as shown in Fig. 2 the operatic tunes by carry on the back chamber 111, and be arranged on 111 top surface of back of the body chamber and with the back of the body
Multiple acoustic aperture 112 that chamber 111 communicates are constituted.The aperture of the acoustic aperture 112 is 20～80 microns.Wherein, the size of acoustic aperture 112,
Quantity and position are set on demand, to adjust air damping and smooth frequency response curve, with needed for can obtaining
Ling Mindu ﹑ bandwidth is defined with extremely low acoustic noise.
The vibrating diaphragm fixture 14 is arranged on the substrate at 111 edge of back of the body chamber, and quantity is multiple.Each vibrating diaphragm
Fixture 14 is centrosymmetric, or axial symmetry.The shape of each vibrating diaphragm fixture 14 is related to wet etching situation.
The conductive diaphragm 12 is located on each vibrating diaphragm fixture 14, and cover the operatic tunes.The conductive diaphragm
Film layer air gap 17 (as shown in Figure 4) is separated between each vibrating diaphragm fixture 14 between 12 and the acoustic aperture 112.Therefore the film layer
The thickness of air gap 17 is identical with the thickness of the vibrating diaphragm fixture 14.
The conductive diaphragm 12 is entered as substrate as substrate or by SOI wafer by the good monocrystal silicon of electric conductivity
Made by after row is thinning, the thickness of the conductive diaphragm 12 that shakes is 2～5 microns.The film layer air gap 17 can be by wet method or steam
Method etching oxidation silicon insulating barrier is formed.
As shown in Figure 3,4, the periphery of the conductive diaphragm 12 has the double wedge 122 of each 14 position of vibrating diaphragm fixture of correspondence.
Each described double wedge 122 covers corresponding vibrating diaphragm fixture 14.
Preferably, in the film layer air gap 17 between adjacent double wedge 122, the conductive diaphragm 12 also posts elastic component
15, the elastic component 15 adjacent to the vibrating diaphragm fixture 14, and with the vibrating diaphragm fixture 14 retain predetermined interval.The bullet
Property part 15 is exemplified as spring.15 one side of the elastic component be prevented from conductive diaphragm 12 with the back of the body chamber top surface it is bonding, the opposing party
Cushioning effect can also be played when the Oscillation Amplitude of conductive diaphragm 12 is excessive in face.
Also there is the first comb 121 in the central area of the conductive diaphragm 12.Wherein, the number of first comb 121
Measure as multiple, multiple first comb 121 constitute centrosymmetry or axisymmetric shape.
Central electrode part 13 is provided with the central area.The central electrode part 13 can be by the back of the body chamber top surface guide
12 direction of electric vibrating diaphragm extends to the position equal with the conductive diaphragm 12.The central electrode part 13 comprising with described first comb
Tooth 121 intersects, and second comb 131 in gap is left between first comb 121.Wherein, first comb 121
The face relative with the second comb 131 constitutes two electrodes of electric capacity.If the quantity of first comb 121 and the second comb 131
It is multiple, then preferably, the electric capacity constituted by first comb 121 and the second comb 131 is axisymmetricly or circumference is symmetrical.
Here, first comb 121 include near the operatic tunes the first plane and it is parallel with first plane and
Away from the second plane of the operatic tunes.Second comb 131 is comprising the 3rd plane near the operatic tunes and away from the sound
The fourth plane in chamber.Thus, the side A1 being connected with the first plane and the second plane in first comb 121 and described
The side A2 being connected with the 3rd plane and fourth plane in two comb 131 constitutes two pole-faces of electrode.When the conductive diaphragm
12 with during acoustic vibration, and side A1 follows the vibration of conductive diaphragm 12 and moves up and down, the side A2 acceptor center electrode pieces
It is fixed, do not move.Thus, side A1 and A2 just to part follow vibration to change, cause the capacity of electric capacity to be sent out therewith
Changing.So as to the signal of telecommunication that silicon microphone output is matched with sound wave.
A kind of alternative is that at least central area of the conductive diaphragm 12 is coated with stress film (being unillustrated),
12 period without friction of the conductive diaphragm, the first comb 121 for covering the stress film and the second comb for not covering stress film
There is between tooth 131 difference in height.For example, in 12 period without friction of the conductive diaphragm, the stress film causes the first comb 121
Less than the second comb 131 for not covering stress film, and the second plane is between the 3rd plane and fourth plane.Work as conductive diaphragm
12 to operatic tunes direction move when, between the first comb 121 and the second comb 131 capacitance reduce；When conductive diaphragm 12 is to away from sound
When cavity direction is moved, between the first comb 121 and the second comb 131, capacitance increases.And for example, it is without friction in the conductive diaphragm 12
Period, the stress film cause the first comb 121 higher than the second comb 131 for not covering stress film, and the first plane is between the
Between three planes and fourth plane.When conductive diaphragm 12 is moved to operatic tunes direction, between the first comb 121 and the second comb 131
Capacitance increases；When conductive diaphragm 12 to move away from the operatic tunes direction when, capacitance between the first comb 121 and the second comb 131
Reduce.
Preferably, as shown in figure 5, in the substrate 11 also fixed insulation electrode fixuture 16, to support it is described in
Heart electrode part 13；During the central electrode part 13 is contained in from the base extension at the operatic tunes edge to the conductive diaphragm 12
The extension component 132 in heart district domain, and positioned at the extension component 132 the central area it is end, comprising the second comb
131 comb part 133.Wherein, the extension component 132 and comb part 133 are installed on electrode fixuture 16.It is described
The edge of extension component 132 can be plane or be laid with the tooth row comprising second comb 131.Corresponding, the conduction is shaken
Film 12 is also plane or the tooth row comprising the first comb 121 with 132 neighboring edge of the extension component.Institute's extension component 132 with
Gap between gap between the conductive diaphragm 12 and first comb 121 and the second comb 131 is identical；The comb
Each second comb 131 and the first comb 121 in part 133 intersect, and be suspended from the film layer air gap 17, the comb portion
Being fixed on centrally through the electrode fixuture 16 for part 133 is carried on the back on the top surface of chamber.For the ease of production, each vibrating diaphragm fixture
14th, the conductive diaphragm 12, each first comb 121 and each second comb 131 are along 13 axial symmetry of central electrode part.
Wherein, the vibrating diaphragm fixture 14 and electrode fixuture 16 are identical insulant.
In addition, be connected with each self-electrode for the ease of the conductive diaphragm 12 and central electrode part 13, except the conduction
Vibrating diaphragm 12 and central electrode part 13 are conductive material, outside electrode is led to corresponding pole-face, also in the conductive diaphragm
12 and central electrode part 13 at least one on electrode column is set, be easy to the silicon microphone to be connected with outer electrode.
In the present embodiment, first electrode post 18 is arranged on the central electrode part 13, and second electrode post 19 is arranged on institute
State on the conductive diaphragm 12 at vibrating diaphragm fixture 14.Each electrode column can adopt aluminum or made of Al-Cu alloy material.With described
13 position of central electrode part and the tooth positions being connected with the second electrode post 19 that one electrode column 18 is connected, it is convex more than other
The area of tooth.It is easy to process and is connected with external pin.
In process of production, what the conductive diaphragm 12 can be overall is covered on the operatic tunes, then by dry etching, together
First comb 121 described in one-step forming and the central electrode part 13.That is, described first comb 121 and the second comb 131 are by dry
Method etches synchronous forming.So can effectively guarantee equidistant precision between electrode.
Due in process of production, inevitably lowering the temperature using liter is gentle so that conductive diaphragm has residual stress, shadow
Ring the precision of vibration.In order to reduce the residual stress, another preferable case is, as shown in figure 4, the conductive diaphragm 12 is with more
It is individual along the axisymmetric pore 123 of the central electrode part, for can speed up aerofluxuss in production.In addition, the pore
123 are also beneficial to penetrate into corrosion material into conductive diaphragm during each fixture is produced.
As shown in figures 2-6, the structure example of silicon microphone of the present utility model is as follows：
The silicon microphone includes：The operatic tunes, conductive diaphragm 12, central electrode part 13.
Wherein, the operatic tunes is by carrying on the back chamber 111, and be arranged on back of the body chamber top surface and multiple with what the back of the body chamber 111 communicated
Acoustic aperture 112 is constituted.Multiple vibrating diaphragm fixtures 14 of insulation and the one of same insulation are provided with the substrate 11 at the operatic tunes edge
Individual electrode fixuture 16.Wherein, the electrode fixuture 16 extends to the center of the conductive diaphragm 12 along back of the body chamber top surface
Region.Conductive central electrode part 13 is located on the electrode fixuture 16, and has multiple second in the central area
Comb 131.
The conductive diaphragm 12 surrounds the central electrode part 13 and sets, and is fixed on each vibrating diaphragm fixture 14.It is described
Gap is left between conductive diaphragm 12 and central electrode part 13.It is solid by the vibrating diaphragm between the conductive diaphragm 12 and back of the body chamber top surface
Determine part 12 and electrode fixuture 16 is spaced out film layer air gap 17.In the central area of the conductive diaphragm 12 with described second
The first comb 121 that comb 131 intersects.Gap is left between first comb 121 and the second comb 131, to form comb
The electric capacity of dentation.Wherein, stress film is also covered at least described central area, in 12 period without friction of the conductive diaphragm, cover
The first comb 121 for having covered the stress film is put down less than the second comb 131 for not covering stress film, and the upper of the first comb 121
Face (i.e. the second plane) is between the lower planes (i.e. the 3rd plane and fourth plane) of the second comb 131.Second comb
The electrode of tooth 131 is by being arranged on 16 position of the electrode fixuture, and the first electrode post 18 that connects of central electrode part 13
Introduce；The electrode of first comb by be arranged on 14 position of vibrating diaphragm fixture, and the conductive diaphragm 12 connect
Second electrode post 19 introduce.
Further, since the central electrode part 13 is different with 12 respective connected electrode of conductive diaphragm.Therefore, the central electrode
The face that the extension component 132 of part 13 is relative with the conductive diaphragm 12 also constitutes electric capacity.
Here, each vibrating diaphragm fixture 14, the conductive diaphragm 12, each first comb 121 and each described second
Comb 131, acoustic aperture 112, pore 123 along the central electrode part 13 axisymmetricly.
During work, the conductive diaphragm 12 follow sound wave near and direction away from film layer air gap on vibrate, and center
Electrode piece 13 is not vibrated by the fixation of electrode fixuture.When conductive diaphragm 12 is moved to operatic tunes direction, 121 He of the first comb
Second capacitance of comb 131 reduces；When conductive diaphragm 12 to move away from the operatic tunes direction when, the first comb 121 and the second comb
131 capacitances of tooth increase.The function that sound wave is changed into the silicon microphone signal of telecommunication is realized so.
In sum, silicon microphone of the present utility model, by the electrode that comb teeth-shaped is arranged in conductive diaphragm central area
It is right, the area of electrode can be increased, capacitance is improved, and can solve asking for the two poles of the earth adhesion to be easily caused when conductive diaphragm vibrates
Topic；Meanwhile, by comb-like electrode to being arranged on the central area of conductive diaphragm, rather than the marginal area of conductive diaphragm is arranged on,
Also ensure that conductive diaphragm produces effectively response in micro-vibration, reduce the brought vibration of conductive diaphragm edge fixation and be obstructed
Situation.So, this utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art all can be carried out to above-described embodiment under without prejudice to spirit and the scope of the present utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in this utility model
All equivalent modifications completed under god and technological thought or change, should be covered by claim of the present utility model.
Claims (10)
1. a kind of silicon microphone, it is characterised in that include：
Substrate with the operatic tunes, is provided with multiple vibrating diaphragm fixtures of insulation in the substrate at the operatic tunes edge；
On each vibrating diaphragm fixture, and the conductive diaphragm of the operatic tunes is covered, wherein, the center of the conductive diaphragm
Region has the first comb；
Be installed in the central electrode part of the central area, comprising with first comb intersect, and with first comb
Between leave second comb in gap；Wherein, the relative face of first comb and the second comb constitutes two electrodes of electric capacity.
2. silicon microphone according to claim 1, it is characterised in that the electrode of also fixed insulation is fixed in the substrate
Part, to support the central electrode part；
The central electrode part is contained in from the operatic tunes edge and extends to the extension component of the central area, and is located at described
End, comb part comprising second comb of the extension component in the central area；Wherein, the extension component and comb
Part is installed on the electrode fixuture；
With the gap identical between first comb and the second comb between institute's extension component and the conductive diaphragm
Gap；The second comb in the comb part is intersected with first comb.
3. silicon microphone according to claim 2, it is characterised in that each vibrating diaphragm fixture, the conductive diaphragm, each
First comb and each second comb are along the central electrode part axial symmetry.
4. silicon microphone according to claim 1, it is characterised in that also include：Be located on the central electrode part
One electrode column；And/or the second electrode post being located on the conductive diaphragm at the vibrating diaphragm fixture.
5. silicon microphone according to claim 1, it is characterised in that at least central area of the conductive diaphragm is coated with
Stress film, has difference in height between the first comb for covering the stress film and the second comb for not covering stress film.
6. silicon microphone according to claim 1, it is characterised in that the quantity of first comb and the second comb is many
It is individual, and the electric capacity that constituted of each first comb and the second comb is axisymmetricly or circumference is symmetrical.
7. silicon microphone according to claim 1, it is characterised in that the operatic tunes is by carrying on the back chamber and be arranged on the back of the body chamber
Top surface and the multiple acoustic aperture compositions communicated with the back of the body chamber；
Film layer air gap is separated between the vibrating diaphragm fixture between the conductive diaphragm and the acoustic aperture.
8. silicon microphone according to claim 7, it is characterised in that also include：In the film layer air gap, it is affixed on described
The elastic component of conductive diaphragm, the elastic component adjacent to the vibrating diaphragm fixture and with the vibrating diaphragm fixture retain it is default between
Every.
9. silicon microphone according to claim 1, it is characterised in that the conductive diaphragm is provided with pore.
10. silicon microphone according to claim 1, it is characterised in that first comb and the second comb pass through dry method
Etching synchronous forming；The conductive diaphragm is single crystal silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620956132.6U CN206061136U (en) | 2016-08-26 | 2016-08-26 | Silicon microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620956132.6U CN206061136U (en) | 2016-08-26 | 2016-08-26 | Silicon microphone |
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| Publication Number | Publication Date |
|---|---|
| CN206061136U true CN206061136U (en) | 2017-03-29 |
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ID=58381955
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620956132.6U Active CN206061136U (en) | 2016-08-26 | 2016-08-26 | Silicon microphone |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107786929A (en) * | 2016-08-26 | 2018-03-09 | 上海微联传感科技有限公司 | Silicon microphone |
| WO2018220344A1 (en) * | 2017-05-31 | 2018-12-06 | Cirrus Logic International Semiconductor Limited | Mems devices and processes |
| CN111943127A (en) * | 2020-07-10 | 2020-11-17 | 瑞声科技（南京）有限公司 | Comb tooth structure, preparation method thereof and microphone |
| WO2024098519A1 (en) * | 2022-11-08 | 2024-05-16 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
-
2016
- 2016-08-26 CN CN201620956132.6U patent/CN206061136U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107786929A (en) * | 2016-08-26 | 2018-03-09 | 上海微联传感科技有限公司 | Silicon microphone |
| CN107786929B (en) * | 2016-08-26 | 2023-12-26 | 华景科技无锡有限公司 | silicon microphone |
| WO2018220344A1 (en) * | 2017-05-31 | 2018-12-06 | Cirrus Logic International Semiconductor Limited | Mems devices and processes |
| US10750291B2 (en) | 2017-05-31 | 2020-08-18 | Cirrus Logic, Inc. | MEMS devices and processes |
| CN111943127A (en) * | 2020-07-10 | 2020-11-17 | 瑞声科技（南京）有限公司 | Comb tooth structure, preparation method thereof and microphone |
| CN111943127B (en) * | 2020-07-10 | 2024-01-05 | 瑞声科技（南京）有限公司 | Comb tooth structure, preparation method thereof and microphone |
| WO2024098519A1 (en) * | 2022-11-08 | 2024-05-16 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
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