CN205319169U - Back contact solar cell - Google Patents
Back contact solar cell Download PDFInfo
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- CN205319169U CN205319169U CN201620021387.3U CN201620021387U CN205319169U CN 205319169 U CN205319169 U CN 205319169U CN 201620021387 U CN201620021387 U CN 201620021387U CN 205319169 U CN205319169 U CN 205319169U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model relates to a back contact solar cell. It includes N type silicon chip main part, and N type silicon chip main part has the relative sensitive surface and the face of being shaded, is provided with first launch site and P+ launch site on the face of being shaded, and first launch site is N+ launch site and N++ launch site, arranges with the P+ launch site in turn in first launch site, one side that N++ kept away from the launch site N type silicon chip main part is provided with N type metal, and the opposite side of N type metal is provided with N type district welding electrode, and N type metal is the point contact with N++ launch site, N type district welding electrode respectively, one side that P+ kept away from the launch site N type silicon chip main part is provided with P type metal, is provided with P type district welding electrode on the P type metal, the side end that N type silicon chip main part was kept away from to P type metal is provided with insulating medium, and insulating medium keeps apart P+ launch site and N type district welding electrode. Because N type metal is the point contact with N++ launch site, N type district welding electrode respectively, can reduce the consumption of N type metal thick liquids to reduce cost.
Description
Technical field
This utility model relates to area of solar cell, particularly relates to a kind of back contact solar battery.
Background technology
Solaode is a kind of semiconductor device that the luminous energy of the sun is converted into electric energy. Owing to it is Green Product, environmental pollution will not be caused, and be Renewable resource, so under current energy starved situation, solaode is a kind of novel energy having broad based growth future.
Development along with solar energy generation technology, for improving the efficiency of the photoelectric conversion of the sun, it has been developed that new a kind of " back contacts " battery, it is characterized in eliminating the grid line of solaode sensitive surface, in shady face relevant position, positive and negative electrode is set, thus the shading of sensitive surface can be reduced, increase photoelectric transformation efficiency. Wherein, most representational is IBC (Interdigitatedbackcontact) battery.
The battery interconnection to assembly is realized after the preparation of IBC battery, weld zone when cell backside needs very wide metal pad to connect as assembly, these metals pad is generally circular in shape, diameter is about 4mm～6mm, but, silver slurry need to be coated in during due to welding the surface of metal pad, and therefore excessive metal electrode makes silver slurry consumption excessive, thus causing relatively costly.
Utility model content
Based on this, it is necessary to for the relatively costly problem of traditional back contact solar battery, it is provided that the back contact solar battery of a kind of low cost.
A kind of back contact solar battery, including N-type silicon chip main body, described N-type silicon chip main body has relative sensitive surface and shady face, and described shady face is provided with the first launch site and P+Launch site, described first launch site is N+Launch site and N++Launch site, described first launch site and described P+Launch site is arranged alternately;
Described N++Launch site is provided with N-type metal away from the side of described N-type silicon chip main body, and the opposite side of described N-type metal is provided with N-type region welding electrode, described N-type metal respectively with described N++Launch site, described N-type region welding electrode are point cantact;
Described P+Launch site is provided with P type metal away from the side of described N-type silicon chip main body, and described P type metal is provided with p type island region welding electrode;
Described P type metal is provided with dielectric away from a side end of described N-type silicon chip main body, and described dielectric isolates described P+Launch site and described N-type region welding electrode.
Introducing dielectric and the N-type region welding electrode being connected with N-type metal electric in above-mentioned back contact solar battery, N-type metal is positioned at a side position of N-type region welding electrode, meanwhile, N-type metal respectively with N++Launch site, N-type region welding electrode be point cantact, overall reduction N-type metal respectively with N++The area that launch site, N-type region welding electrode contact, therefore, it is possible to reduce the consumption of N-type metal paste, thus greatly reducing the processing cost of back contact solar battery.
Additionally, due to define p type island region welding electrode and N-type region welding electrode, greatly facilitate the welding of assembly, whether manual welding or Machine automated welding all can meet, and assembly is reliable and stable, has positive realistic meaning.
Wherein in an embodiment, described N++The doping content of launch site is described N+1.5 times of the doping content of launch site～3 times.
Wherein in an embodiment, described N++The area of launch site accounts for the 3%～7% of the area of described shady face.
Wherein in an embodiment, each described N++The area of the contact surface that launch site is drawn is 0.001mm2～0.005mm2。
Wherein in an embodiment, each described P+The area of the contact surface that launch site is drawn is 0.001mm2～0.005mm2。
Wherein in an embodiment, each described P+Launch site is provided with some discrete non-crystalline silicon media away from the side of described N-type silicon chip main body.
Non-crystalline silicon medium
Wherein in an embodiment, the thickness of described dielectric is 20 μm～40 μm.
Wherein in an embodiment, described N-type metal is silver, and described P type metal is aluminum.
Wherein in an embodiment, described N-type region welding electrode is layers of copper, aluminium lamination or tin layers.
Wherein in an embodiment, described sensitive surface is provided with N+Front-surface field, described N+Front-surface field is pyramid matte, described N+Front-surface field is provided with anti-reflection layer on the surface away from described N-type silicon chip main body.
Accompanying drawing explanation
Fig. 1 is the side sectional view of the back contact solar battery of an embodiment.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail. Elaborate a lot of detail in the following description so that fully understanding the present invention. But the present invention can implement being much different from alternate manner described here, and those skilled in the art can do similar improvement when without prejudice to intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
It should be noted that be referred to as " being fixed on " another element when element, it can directly on another element or can also there is element placed in the middle. When an element is considered as " connection " another element, it can be directly to another element or may be simultaneously present centering elements.
Unless otherwise defined, all of technology used herein is identical with the implication that the those skilled in the art belonging to the present invention are generally understood that with scientific terminology. The term used in the description of the invention herein is intended merely to the purpose describing specific embodiment, it is not intended that in the restriction present invention. Term as used herein " and/or " include the arbitrary and all of combination of one or more relevant Listed Items.
Referring to Fig. 1, the back contact solar battery 100 of an embodiment includes N-type silicon chip main body 3, and N-type silicon chip main body 3 has relative sensitive surface 110 and shady face 120.
Sensitive surface 110 is provided with N+Front-surface field 2. N+Front-surface field 2 is pyramid matte. N+Front-surface field 2 is coated with silicon nitride anti-reflection layer 1 on the surface away from N-type silicon chip main body 3, but anti-reflection layer is not limited, it is also possible to for the anti-reflection layer of other materials.
Shady face 120 is provided with the first launch site and P+Launch site 4. First launch site is N+Launch site 8 and N++Launch site 5, and N++The both sides of launch site 5 are provided with N+Launch site 8. In the present embodiment, N++The doping content of launch site is N+2 times of the doping content of launch site, but it is not limited to this, it is also possible to it is 1.5 times～3 times, also can select other doping multiples as required. As shown in FIG., the first launch site and P+Launch site 4 is arranged alternately.
Each P+Launch site 4 is provided with some discrete non-crystalline silicon media 12 away from the side of N-type silicon chip main body 3. P+Launch site 4 is provided with P type metal 7 away from the side of N-type silicon chip main body 3. P type metal 7 covers P+Launch site 4 and non-crystalline silicon medium 12. P+Launch site 4 traverse non-crystalline silicon medium 12 and P type metal 7 point cantact. Concrete, each P+The area of the contact surface that launch site 4 is drawn is 0.001mm2. But it is not limited to this, it is also possible to for 0.001mm2～0.005mm2Between any number.
P type metal 7 is provided with p type island region welding electrode 11. P type metal in the present embodiment is aluminum, but it is not limited. N++Launch site 5 is provided with N-type metal 6 away from the side of N-type silicon chip main body 3. N-type metal 6 in the present embodiment is silver, can pass through arrange silver slurry and make it solidify to obtain afterwards.
As it is shown in figure 1, N-type metal 6 and N++Launch site 5 is point cantact. Each N in the present embodiment++The area of the contact surface that launch site 5 is drawn is 0.003mm2. But it is not limited to this, it is also possible to for 0.001mm2～0.005mm2Between any number. Additionally, N++The area of launch site 5 accounts for the 3%～7% of the area of shady face 120.
The opposite side of N-type metal 6 is provided with N-type region welding electrode 9, and N-type region welding electrode 9 is also point cantact with N-type metal 6. N-type region welding electrode 9 can be layers of copper, aluminium lamination or tin layers, certainly, is also selected from other metal level or metal alloy layer. N-type region welding electrode 9 is arranged at the outside of N-type metal 6 by the mode that can pass through silk screen printing, spin coating or ultrasonic spraying.
Compared with traditional back contact solar battery, in the back contact solar battery 100 of the present embodiment, due to N-type metal 6 respectively with N++Launch site 5, N-type region welding electrode 9 contact area less, reduce contact area, reducing the consumption reducing N-type metal paste while metal contacts electric leakage with N-type silicon chip main body 3, thus greatly reducing the processing cost of back contact solar battery 100. Additionally, P type metal 7 is provided with dielectric 10 away from a side end of N-type silicon chip main body 3. Dielectric 10 isolates P+Launch site 4 and N-type region welding electrode 9. In the present embodiment, the thickness of dielectric 10 is 25 μm, it is possible to penetrating of barrier metal particle. But the thickness of dielectric 10 also any number between optional 20 μm～40 μm. Additionally, the insulation resistance of dielectric 10 is a megohm rank. Dielectric 10 can pass through insulating cement solidification and obtain, and insulating cement can be selected from any one in epoxy resin, polyimides or acrylic resin, and curing mode can be selected from heat cure or ultra-violet curing.
In sum, in the back contact solar battery 100 of the present embodiment, owing to being provided with dielectric, p type island region welding electrode and N-type region welding electrode, it is very easy to the welding of assembly, whether manual welding or Machine automated welding all can meet, and assembly is reliable and stable, there is positive realistic meaning.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, the all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics is absent from contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed several embodiments of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to utility model patent scope. It should be pointed out that, for the person of ordinary skill of the art, without departing from the concept of the premise utility, it is also possible to make some deformation and improvement, these broadly fall into protection domain of the present utility model. Therefore, the protection domain of this utility model patent should be as the criterion with claims.
Claims (10)
1. a back contact solar battery, including N-type silicon chip main body, described N-type silicon chip main body has relative sensitive surface and shady face, it is characterised in that be provided with the first launch site and P on described shady face+Launch site, described first launch site is N+Launch site and N++Launch site, described first launch site and described P+Launch site is arranged alternately;
Described N++Launch site is provided with N-type metal away from the side of described N-type silicon chip main body, and the opposite side of described N-type metal is provided with N-type region welding electrode, described N-type metal respectively with described N++Launch site, described N-type region welding electrode are point cantact;
Described P+Launch site is provided with P type metal away from the side of described N-type silicon chip main body, and described P type metal is provided with p type island region welding electrode;
Described P type metal is provided with dielectric away from a side end of described N-type silicon chip main body, and described dielectric isolates described P+Launch site and described N-type region welding electrode.
2. back contact solar battery according to claim 1, it is characterised in that described N++The doping content of launch site is described N+1.5 times of the doping content of launch site～3 times.
3. back contact solar battery according to claim 1, it is characterised in that described N++The area of launch site accounts for the 3%～7% of the area of described shady face.
4. back contact solar battery according to claim 1 and 2, it is characterised in that each described N++The area of the contact surface that launch site is drawn is 0.001mm2～0.005mm2。
5. back contact solar battery according to claim 1, it is characterised in that each described P+The area of the contact surface that launch site is drawn is 0.001mm2～0.005mm2。
6. back contact solar battery according to claim 1, it is characterised in that each described P+Launch site is provided with some discrete non-crystalline silicon media away from the side of described N-type silicon chip main body.
7. back contact solar battery according to claim 1, it is characterised in that the thickness of described dielectric is 20 μm～40 μm.
8. back contact solar battery according to claim 1, it is characterised in that described N-type metal is silver, and described P type metal is aluminum.
9. back contact solar battery according to claim 1, it is characterised in that described N-type region welding electrode is layers of copper, aluminium lamination or tin layers.
10. back contact solar battery according to claim 1, it is characterised in that be provided with N on described sensitive surface+Front-surface field, described N+Front-surface field is pyramid matte, described N+Front-surface field is provided with anti-reflection layer on the surface away from described N-type silicon chip main body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620021387.3U CN205319169U (en) | 2016-01-11 | 2016-01-11 | Back contact solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620021387.3U CN205319169U (en) | 2016-01-11 | 2016-01-11 | Back contact solar cell |
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| CN205319169U true CN205319169U (en) | 2016-06-15 |
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| CN201620021387.3U Active CN205319169U (en) | 2016-01-11 | 2016-01-11 | Back contact solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111108609A (en) * | 2017-09-22 | 2020-05-05 | 荷兰应用自然科学研究组织Tno | Interdigitated back contact solar cell with p-type conductivity |
| US11088294B2 (en) | 2016-06-30 | 2021-08-10 | Byd Company Limited | Photovoltaic cell assembly, photovoltaic cell array, and solar cell assembly |
-
2016
- 2016-01-11 CN CN201620021387.3U patent/CN205319169U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11088294B2 (en) | 2016-06-30 | 2021-08-10 | Byd Company Limited | Photovoltaic cell assembly, photovoltaic cell array, and solar cell assembly |
| CN111108609A (en) * | 2017-09-22 | 2020-05-05 | 荷兰应用自然科学研究组织Tno | Interdigitated back contact solar cell with p-type conductivity |
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| C14 | Grant of patent or utility model | ||
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Effective date of registration: 20220119 Address after: 518000 No. 9988 Shennan Road, Nanshan District, Shenzhen, Guangdong Patentee after: HAN'S LASER TECHNOLOGY INDUSTRY GROUP Co.,Ltd. Patentee after: Shenzhen Han's photovoltaic equipment Co., Ltd Address before: 201615 No. nine, Jing Jing Road, Songjiang District, Shanghai, 1000 Patentee before: SHANGHAI HAN'S NEW ENERGY TECHNOLOGY CO.,LTD. |