CN204167243U - Circuit protecting element - Google Patents
Circuit protecting element Download PDFInfo
- Publication number
- CN204167243U CN204167243U CN201420642839.0U CN201420642839U CN204167243U CN 204167243 U CN204167243 U CN 204167243U CN 201420642839 U CN201420642839 U CN 201420642839U CN 204167243 U CN204167243 U CN 204167243U
- Authority
- CN
- China
- Prior art keywords
- region
- base layer
- filler
- circuit protection
- element portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000945 filler Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000011800 void material Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 9
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000006060 molten glass Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Fuses (AREA)
Abstract
The purpose of this utility model is to provide a kind of can carry out with low current the circuit protecting element that fuses.Circuit protecting element of the present utility model possesses: insulated substrate (11); A pair upper surface electrode (12), it is arranged on the both ends of this insulated substrate (11); Element portion (13), it is formed in the mode of this pair upper surface electrode (12) of bridge joint and is electrically connected with described a pair upper surface electrode (12); First basalis (14), it is arranged between this element portion (13) and described insulated substrate (11), described first basalis (14) is by glass and inner hollow or thick matter and formed with the mixture of amorphous silica or alumina multiple fillers that are principal component, described first basalis (14) is made up of first area (14a) and the second area (14b) on the top that is positioned at described first area (14a), and the density of the described filler of described second area (14b) is lower than the density of the described filler of first area (14a).
Description
Technical Field
The present invention relates to a circuit protection element which is fused when an overcurrent flows therethrough and protects various electronic devices.
Background
As shown in fig. 3, the conventional circuit protection element includes: an insulating substrate 1, a pair of upper surface electrodes 2 provided at both ends of the insulating substrate 1, an element section 3 bridging the pair of upper surface electrodes 2, a base layer 4 formed between the element section 3 and the insulating substrate 1 and made of resin, end surface electrodes 5 formed at both ends of the insulating substrate 1 and connected to the upper surface of the element section 3, and an insulating layer 6 protecting the element section 3.
As a prior art document relating to the present invention, for example, patent document 1 is known.
Patent document 1: japanese patent laid-open publication No. 2004-319168
In recent years, low consumption current is urgently desired in the market for electronic devices. Therefore, low current fusing is required as a characteristic required for the circuit protection element. Further, in order to realize low current fusing, the thickness of the element portion needs to be reduced.
However, in the above-described conventional structure, if a necessary or more pressure is applied from above at the time of packaging or the like when the thickness of the element portion 3 is reduced, the base layer 4 is easily deformed because the base layer 4 is made of a soft resin, and thus the element portion 3 located on the upper surface of the base layer 4 is easily deformed or easily damaged. As a result, the thickness of the element portion 3 cannot be reduced, and there is a problem that the fuse cannot be blown at a low current.
SUMMERY OF THE UTILITY MODEL
[ problem to be solved by the utility model ]
The present invention has been made to solve the above problems, and an object of the present invention is to provide a circuit protection element that can be fused at a low current.
[ MEANS FOR solving PROBLEMS ] A method for solving the problems
In order to achieve the above object, the present invention is provided with: an insulating substrate; a pair of upper surface electrodes provided at both end portions of the insulating substrate; an element portion formed so as to bridge the pair of upper surface electrodes and electrically connected to the pair of upper surface electrodes; a first base layer provided between the element section and the insulating substrate; a fuse part formed in the element part, wherein the first base layer is composed of a mixture of glass and a plurality of fillers which are hollow inside or have a coarser inner surface than that of the fillers and mainly contain ceramic, the first base layer is composed of a first region and a second region located above the first region, the density of the filler of the second region is lower than that of the filler of the first region, or the void ratio of the second region is smaller than that of the first region, and according to this structure, since the first base layer is made of glass harder than resin, the first base layer has higher stress resistance, since the element portion on the upper surface of the first base layer is hardly deformed or damaged by almost no deformation of the first base layer even if a pressure is applied from above, the thickness of the element portion can be reduced, and as a result, fusing can be performed with a low current. Further, since air is contained in the filler, the thermal conductivity of the first base layer can be reduced, and the inrush current resistance and the quick-break property can be improved. Further, since the second region having a low filler density and a small porosity is in direct contact with the element portion, the second region can prevent moisture and gas in the atmosphere from reaching the element portion, and thus, an operational effect of preventing deterioration of the element portion can be obtained.
[ Utility model effect ] is provided
As described above, in the circuit protection device of the present invention, since the first base layer is formed of a mixture of glass harder than resin and a plurality of fillers which are hollow or coarse inside and mainly composed of ceramic, the first base layer has high stress resistance, and the first base layer is hardly deformed even if a pressure is applied from above, whereby the device portion on the upper surface of the first base layer is hardly deformed or damaged, and therefore the thickness of the device portion can be reduced, and as a result, an effect of enabling fusing at a low current is obtained.
Drawings
Fig. 1 is a sectional view of a circuit protection device according to embodiment 1 of the present invention;
fig. 2 is a sectional view of a circuit protection element according to embodiment 2 of the present invention;
fig. 3 is a cross-sectional view of a conventional circuit protection device.
Description of the symbols
11 insulating substrate
12 upper surface electrode
13 element part
14 first substrate layer
14a first region
14b second region
15 fusing part
19 second substrate layer
Detailed Description
(embodiment mode 1)
Fig. 1 is a cross-sectional view showing a circuit protection device according to embodiment 1 of the present invention, and as shown in fig. 1, the circuit protection device according to embodiment 1 of the present invention includes: an insulating substrate 11; a pair of upper surface electrodes 12 provided at both ends of the upper surface of the insulating substrate 11; an element portion 13 formed so as to bridge the pair of upper surface electrodes 12 and electrically connected to the pair of upper surface electrodes 12; a first base layer 14 provided between the element section 13 and the insulating substrate 11; and a fuse part 15 formed on the element part 13 positioned on the upper surface of the first base layer 14, the fuse part being formed of a mixture of glass and a plurality of hollow fillers containing silica as a main component.
The first base layer 14 is composed of a first region 14a and a second region 14b located above the first region 14a, and the density of the filler in the second region 14b is lower than the density of the filler in the first region 14 a.
End face electrode layers 16 made of a silver material are formed on both end portions of the insulating substrate 11 so as to overlap with a part of the element portion 13, and a plating film (not shown) is formed on the surfaces of the end face electrode layers 16. An insulating layer 17 made of silicone resin is provided so as to cover the element portion 13.
In the above structure, the insulating substrate 11 has a square shape and contains 55% to 96% of Al2O3The alumina of (1).
The pair of upper surface electrodes 12 are provided at both ends of the upper surface of the insulating substrate 11, and are formed by printing Ag or the like.
The element portion 13 is formed by sputtering so as to cover substantially the entire surface of the insulating substrate 11, and is provided on the upper surfaces of the first base layer 14 and the pair of upper surface electrodes 12. The element portion 13 is formed by sputtering Ti and Cu, and then sputtering Al, Zn, and Sn. Since the element portion 13 is formed only by sputtering, the thickness of the element portion 13 can be reduced. The element portion 13 may be formed by using another material or by thin plating.
In addition, two trimming grooves 18 are formed in the center of the element portion 13 by laser light from the side surfaces of the element portion 13 facing each other toward the center of the element portion 13, and the region surrounded by the two trimming grooves 18 becomes a fusion portion 15 which is melted and broken when an overcurrent is applied. The fusing portion 15 may be formed by patterning the element portion 13.
The first foundation layer 14 is provided in the central portion of the upper surface of the insulating substrate 11, and the first foundation layer 14 is provided between the element portion 13 located between the pair of upper surface electrodes 12 and the insulating substrate 11. The first base layer 14 is made of SiO2Etc. formAnd a filler having a hollow interior and a particle diameter of about 10 μm containing silica as a main component. If an amorphous ceramic is used, alumina other than silica can be used as the main component of the filler. In this case, since the first base layer 14 is mixed with the ceramic having a hollow interior, the first base layer 14 has a predetermined porosity.
The first base layer 14 is composed of a first region 14a and a second region 14b located above the first region 14a, and the density of the filler in the second region 14b is lower than the density of the filler in the first region 14 a.
The first region 14a and the second region 14b may not be provided in a layered manner, and the density of the filler may be gradually decreased from the lower surface toward the upper surface of the first base layer 14.
Here, the density of the filler does not mean the density of each filler monomer, but means the proportion of the content of the filler with respect to the entire first base layer 14, and if the density of the filler is high, the amount of the hollow becomes large and the void ratio becomes large, whereas if the density of the filler is low, the amount of the hollow becomes small and the void ratio becomes small.
The mixing ratio of the filler in the first base layer 14 is preferably 10 to 90 vol%, and particularly preferably 30 vol% or more in the first region 14a and 70 vol% or less in the second region 14 b. Here, if the mixing ratio of the filler in the first region 14a is less than 30 vol%, the air inside the first base layer 14 is reduced, and therefore, heat generated by the element portion 13 may easily escape to the insulating substrate 11, which may cause deterioration (reduction) of quick-break properties. If the mixing ratio of the filler in the second region 14b is more than 70 vol%, the unevenness of the surface becomes large, and thus the element portion 13 may not be formed.
In addition, the filler is preferably a ceramic containing silica or alumina as a main component, and since the silica or alumina has stable chemical properties and excellent heat resistance and fire resistance, it is possible to stabilize the fuse property and the insulation resistance after fuse even when the element portion 13 is heated at a high temperature by passing an overcurrent. As the filler, a material having a density inside larger than that of the surface can be used.
Next, a method for manufacturing a circuit protection element according to an embodiment of the present invention will be described.
In FIG. 1, first, 55% to 96% of Al is contained2O3A silver paste or a silver-palladium alloy conductor paste containing silver as a main component is printed on both end portions of the upper surface of the insulating substrate 11 made of alumina, and fired at about 850 ℃.
Next, a mixture of glass and a filler containing silica as a main component, which is hollow inside, is printed on the center portion of the insulating substrate 11, thereby forming the first foundation layer 14. Here, the first base layer 14 is provided by first printing the first region 14a thereof, and then printing the second region 14b having a lower filler density than that of the first region 14 a. Thereafter, the first base layer 14 is formed by firing at a temperature of about 850 ℃.
At this time, since the main component of the first underlayer 14 is glass, the pair of upper electrodes 12 and the first underlayer 14 can be fired simultaneously, and productivity can be improved.
Next, the element portion 13 is formed on the upper surfaces of the first underlayer 14 and the pair of upper surface electrodes 12. In this case, the element portion 13 is configured to bridge between the pair of upper surface electrodes 12 and to be electrically connected to the pair of upper surface electrodes 12.
The element portion 13 is formed by sputtering Ti and Cu first, and then sputtering Al, Zn, and Sn in this order.
Next, trimming grooves 18 are formed by cutting two portions of the center portion of the element portion 13 on the upper surface of the first base layer 14 from the side surfaces of the element portion 13 facing each other toward the center direction of the element portion 13 with a laser, and thereby, a fusion portion 15 that melts and breaks when an overcurrent is applied is provided in a region surrounded by the two trimming grooves 18.
Next, a resin such as silicone is formed on the element portion 13 so as to cover at least the fuse portion 15, thereby providing an insulating layer 17.
Next, a resin silver paste is applied to both end portions of the insulating substrate 11 so as to overlap with a part of the element portion 13, and is cured to form the end face electrode layers 16. The end face electrode layer 16 may be formed by a thin film process such as sputtering.
Finally, a plating film (not shown) having a double-layer structure of nickel and tin is formed on the end face electrode layer 16, thereby manufacturing a circuit protection element according to an embodiment of the present invention.
In the above-described embodiment of the present invention, since the first base layer 14 is formed of a mixture of glass, which is harder than resin, i.e., is less likely to deform even if stress is applied, and a plurality of fillers, which are hollow inside and mainly composed of silica, the first base layer 14 has high stress resistance, and the first base layer 14 is hardly deformed even if pressure is applied from above, so that the element portion 13 is less likely to deform or damage even if the thickness of the element portion 13 on the upper surface of the first base layer 14 is reduced, and therefore, it is possible to obtain an effect of fusing even a low current of the order of mA, for example.
Further, since the filler contains air therein, the thermal conductivity is very low, and the thermal conductivity of the glass is also low, so that the heat of the element portion 13 can be suppressed from diffusing into the insulating substrate 11. Accordingly, since the first base layer 14 can be used as a heat insulating layer, even if the cross-sectional area of the element unit 13 is increased in order to improve the inrush current resistance, heat generated in the element unit 13 can be accumulated in the element unit 13, and thus the element unit 13 can be rapidly melted when an overcurrent flows, and thus both the inrush current resistance and the quick-break resistance can be achieved.
In order to achieve both the inrush current resistance and the quick-break property as described above, it is necessary to reduce the thermal conductivity of the filler, and therefore it is preferable to use silica as the main component.
Further, since the first foundation layer 14 is constituted by the first region 14a and the second region 14b located above the first region 14a, and the density of the filler in the second region 14b is lower than the density of the filler in the first region 14a, even if the first foundation layer 14 is exposed to the side surface of the insulating substrate 11 and moisture, gas, or the like in the outside atmosphere enters the first foundation layer 14, since the second region 14b which is hollow inside and whose density of the filler mainly composed of silica is low and whose porosity is small is in direct contact with the element portion 13, it is possible to prevent the moisture and the gas in the atmosphere from reaching the element portion 13 by the second region 14b, and thus it is possible to prevent the element portion 13 from being deteriorated.
Further, since the second region 14b has a lower density of the filler than the first region 14a, the thermal conductivity of the second region 14b is higher than that of the first region 14 a. Therefore, when a rated current is applied, the generated heat is easily diffused.
Since the first underlayer 14 contains glass and ceramic (silica, alumina), the adhesion between the insulating substrate 11 made of alumina and the first underlayer 14 is improved.
(embodiment mode 2)
Fig. 2 is a cross-sectional view of a circuit protection device according to embodiment 2 of the present invention. In embodiment 2 of the present invention, members having the same configurations as those of embodiment 1 of the present invention are given the same reference numerals, and the description thereof is omitted.
Embodiment 2 of the present invention is different from embodiment 1 of the present invention described above in that, as shown in fig. 2, a second base layer 19 is provided between the first base layer 14 and the element section 13, that is, the second base layer 19 is formed on the upper portion of the first base layer 14 and on the lower portion of the element section 13.
At this time, the density of the filler in the second ground layer 19 is made lower than the density of the filler in the first ground layer 14, and the second ground layer 19 is brought into contact with the fuse 15.
In this case, since the second foundation layer 19 having a low density of the filler mainly composed of silica, that is, a small porosity, which is hollow inside, can prevent moisture and gas in the atmosphere from reaching the element portion 13, it is possible to prevent deterioration of the element portion 13.
In addition, an insulator such as glass or epoxy resin not mixed with a filler may be used for the second base layer 19. According to this configuration, since almost no void is formed in the second base layer 19, moisture and gas in the atmosphere can be more effectively prevented from reaching the element section 13 in contact with the second base layer 19, and deterioration of the element section 13 can be reliably prevented.
In particular, if glass not mixed with a filler is used for the second base layer 19, the insulation resistance of the element portion 13 after disconnection is increased and the generation of an arc is suppressed when the element portion 13 is melted and disconnected by applying an overcurrent. This is because the glass is simultaneously melted when the fusing portion 15 of the element portion 13 is fused, and therefore the cutting distance of the fused fusing portion 15 can be increased, and thereby the element portion 13 can be prevented from being electrically connected again, current does not flow in the circuit protection element, and further, it is difficult to generate an arc even if a high voltage is applied. On the other hand, when the second base layer 19 is not present and the element section 13 is directly in contact with the first base layer 14 mixed with the filler, the amount of molten glass decreases in accordance with the amount of the filler, the cutting distance of the element section 13 becomes short, and the insulation resistance may deteriorate and arcing may occur.
Further, if the periphery of the first base layer 14 is covered with the second base layer 19, that is, if the second base layer 19 covers not only the upper surface of the first base layer 14 but also the end portion thereof, the end portion of the first base layer 14 does not come into contact with the element portion 13, and therefore, moisture or gas in the atmosphere can be prevented from reaching the element portion 13 from the end portion of the first base layer 14.
The upper surface of the element portion 13 may be covered with the same material as the second base layer 19. This can reliably prevent moisture and gas in the atmosphere from reaching the element portion 13. In this case, when the second ground layer 19 is glass in which no filler is mixed, the amount of molten glass flowing into the glass fusion-cut portion is increased, thereby improving the insulation resistance and the effect of suppressing the generation of arc.
Although the circuit protection element has been described in embodiments 1 and 2 of the present invention, the present invention may be applied to other electronic components such as fuse resistors required for stabilizing the fuse characteristics.
Industrial applicability
The circuit protection element of the present invention has an effect of being fused at a low current, and is useful particularly in a circuit protection element or the like which is fused by an overcurrent flowing therethrough to protect various electronic devices.
Claims (8)
1. A circuit protection element is provided with:
an insulating substrate;
a pair of upper surface electrodes provided at both end portions of the insulating substrate;
an element portion formed so as to bridge the pair of upper surface electrodes and electrically connected to the pair of upper surface electrodes;
a first base layer provided between the element section and the insulating substrate;
a fusing part formed at the element part,
wherein,
the first substrate layer is composed of a mixture of glass and a plurality of fillers which are hollow inside or have a rough inner surface and contain ceramic as a main component,
the first base layer is composed of a first region and a second region located above the first region,
the density of the filler of the second region is lower than the density of the filler of the first region, or the void fraction of the second region is smaller than the void fraction of the first region.
2. A circuit protection element is provided with:
an insulating substrate;
a pair of upper surface electrodes provided at both end portions of the insulating substrate;
an element portion formed so as to bridge the pair of upper surface electrodes and electrically connected to the pair of upper surface electrodes;
a first base layer provided between the element section and the insulating substrate;
a fusing part formed at the element part,
wherein,
the first substrate layer is composed of a mixture of glass and a plurality of fillers which are hollow inside or have a rough inner surface and contain ceramic as a main component,
the circuit protection element is formed with a second base layer located between the first base layer and the element section,
the density of the filler of the second substrate layer is lower than the density of the filler of the first substrate layer, or the void fraction of the second substrate layer is smaller than the void fraction of the first substrate layer.
3. The circuit protection element of claim 2,
the second substrate layer is not mixed with the filler.
4. The circuit protection element of claim 3,
the second substrate layer is composed of glass.
5. The circuit protection element of claim 2,
the periphery of the first substrate layer is covered by the second substrate layer.
6. The circuit protection element of claim 2,
an upper surface of the element section is covered with the same material as the second base layer.
7. The circuit protection element of claim 1,
the mixing ratio of the filler in the first base layer is 30% by volume or more in the first region and 70% by volume or less in the second region.
8. The circuit protection element of claim 1,
the main component of the filler is silica.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013236421A JP6201147B2 (en) | 2013-11-15 | 2013-11-15 | Circuit protection element |
| JP2013-236421 | 2013-11-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204167243U true CN204167243U (en) | 2015-02-18 |
Family
ID=52540903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420642839.0U Expired - Lifetime CN204167243U (en) | 2013-11-15 | 2014-10-31 | Circuit protecting element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6201147B2 (en) |
| CN (1) | CN204167243U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6311115B2 (en) * | 2014-03-14 | 2018-04-18 | パナソニックＩｐマネジメント株式会社 | Circuit protection element and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0963454A (en) * | 1995-08-29 | 1997-03-07 | Kyocera Corp | Chip fuse |
| JP5287154B2 (en) * | 2007-11-08 | 2013-09-11 | パナソニック株式会社 | Circuit protection element and manufacturing method thereof |
| JP5306139B2 (en) * | 2009-10-08 | 2013-10-02 | 北陸電気工業株式会社 | Chip fuse |
| JP2011159410A (en) * | 2010-01-29 | 2011-08-18 | Panasonic Corp | Circuit protection element |
| JP6135895B2 (en) * | 2012-03-19 | 2017-05-31 | パナソニックＩｐマネジメント株式会社 | Circuit protection element |
| JP2014096272A (en) * | 2012-11-09 | 2014-05-22 | Panasonic Corp | Circuit protection element |
-
2013
- 2013-11-15 JP JP2013236421A patent/JP6201147B2/en active Active
-
2014
- 2014-10-31 CN CN201420642839.0U patent/CN204167243U/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP6201147B2 (en) | 2017-09-27 |
| JP2015097141A (en) | 2015-05-21 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150218 |