CN203746850U - High-efficiency LED module group device capable of omnibearing light emission - Google Patents
High-efficiency LED module group device capable of omnibearing light emission Download PDFInfo
- Publication number
- CN203746850U CN203746850U CN201420047465.8U CN201420047465U CN203746850U CN 203746850 U CN203746850 U CN 203746850U CN 201420047465 U CN201420047465 U CN 201420047465U CN 203746850 U CN203746850 U CN 203746850U
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- Prior art keywords
- dlc
- heat conduction
- chip
- led module
- transparent heat
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- Expired - Lifetime
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- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 31
- 239000010980 sapphire Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000007598 dipping method Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 32
- 230000004888 barrier function Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The utility model provides a high-efficiency LED module group device capable of omnibearing light emission. The device comprises a sapphire substrate, the sapphire substrate is provided with LED chips, the upper and lower layers of the LED chips are respectively plated with transparent DLC heat-conductive films, one side of the chip to be fixed is also plated with a transparent DLC heat-conductive film, and the transparent DLC heat-conductive film at the lower layer of the LED chips is provided with a prefabricated circuit or prefabricated metal electrodes which are used as leads connected with an external power supply. The device uses sapphire as a multi-chip module group substrate to realize omnibearing light emission; and the sapphire substrate is plated with transparent DLC heat-conductive films to greatly improve the heat radiation performance of an LED module group.
Description
(1) technical field
The utility model belongs to LED encapsulation technology field, is specifically related to a kind of efficient LED module device of comprehensive bright dipping.
(2) background technology
LED has the advantages such as high light efficiency, low power consuming, long-life, environmental protection, is optimal conventional light source substitute.Yet LED lamp also exists many problems at aspects such as luminous efficiency, heat radiation, light fixture weight at present, wherein, the maximum bottleneck that hinders LED performance boost dispels the heat exactly.In traditional LED structure light source packaged type, low-power LED multichip packaging structure, because caloric value is little, adopts PCB substrate to do support.And high-capacity LED, for meeting its heat radiation requirement, often adopts MCPCB substrate, ceramic substrate or DCB substrate.Wherein good heat dispersion performance is exactly MCPCB encapsulation, in the good metallic substrates of thermal conductivity, makes successively insulating barrier and circuit layer, more just chip or lamp pearl connect thereon.The caloric requirement that chip produces just can be transmitted in heat-conducting metal substrate by insulating barrier.Yet insulating barrier is generally made by macromolecular material, its conductive coefficient is only 0.2 ~ 0.5W/mK, has a strong impact on whole heat-conducting effect, and the heat that causes chip to produce can not shed in time.Especially for high-power die or chip module, its heat dispersion is not by far up to the mark.
In addition, because conventional package substrates is light tight, the light that light source sends cannot penetrate from the back side, after must and absorbing through multiple reflections, could penetrate from front, cause external quantum efficiency low, and then the light extraction efficiency of the even whole lamp of reduction LED module is low, and rising angle is little.
Diamond like carbon film (DLC) is the amorphous carbon-film with the carbon atom spacial framework of SP2 and SP3 hydridization, has the performance that high optical transmission, thermal conductivity, insulating properties, resistance to chemical corrosion and resistance to wear etc. are excellent, and it surpasses thermal conductivity 400W/m.K.Existing about replace the research of the macromolecular material insulating barrier between traditional metal circuit and metal substrate with DLC film, can effectively improve the thermal conductivity of insulating barrier.But this structure exists conventional package substrates because of series of problems such as the light tight rising angle bringing are little, generation heat is more equally.
(3) summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, utilizes the light transmission of sapphire excellence and thermal coefficient of expansion and the DLC film advantage such as match, and a kind of efficient LED module device of comprehensive bright dipping of high reliability is provided.
The purpose of this utility model is achieved in that it comprises sapphire substrate, on sapphire substrate, be provided with LED chip, the upper and lower two-layer transparent heat conduction film of DLC that is all coated with of LED chip, treat to be coated with the transparent heat conduction film of DLC in fixed chip one side, on the transparent heat conduction film of the DLC of lower floor of LED chip, be manufactured with prefabricated circuit or as with the prefabricated metal electrode of external power source connecting lead wire.
The utility model also has some technical characterictics like this:
1, described sapphire substrate is two-sided sapphire polished silicon wafer, and polished silicon wafer is rectangle, square or circular;
2, described LED chip is at least one group of identical photochromic or different photochromic chips, between chip, by wire or prefabricated circuit, is realized and being interconnected;
3, described LED chip is fixed on the transparent heat conduction film of DLC with the form of formal dress or upside-down mounting;
4, described LED chip fixes on the transparent heat conduction film of DLC with crystal-bonding adhesive or eutectic solid welding;
5, the fluorescent material that the transparent heat conduction film of described DLC outside is coated with fluorescent glue or evenly sprays.
The utility model discloses a kind of LED module device architecture, be specifically related to a kind ofly take sapphire as substrate, with DLC film, improve the efficient LED module device of the high reliability of device heat dispersion, comprehensive bright dipping.The utility model is done chip package base plate with sapphire polished silicon wafer, at sapphire substrate, treats to be coated with in fixed chip one side the transparent heat conduction film of DLC.On the transparent heat conduction film of DLC, make prefabricated circuit, or only on the transparent heat conduction film of substrate two ends DLC, make prefabricated metal electrode, as the lead-in wire being connected with external power source.At least one core assembly sheet is fixed on the transparent heat conduction film of DLC, between between chip and two ends chip electrode and prefabricated metal electrode, by wire or prefabricated circuit, realizes and interconnecting.In sapphire substrate fixed chip one side, plate again the transparent heat conduction film of one deck DLC, form sandwich, so far form a naked LED illuminating module.As light that chip sent need to carry out Color Conversion, at the outside coated fluorescent glue of total or evenly spray last layer fluorescent material.The utility model adopts sapphire as multi-chip modules substrate, can realize comprehensive bright dipping; On sapphire substrate, plate the transparent heat conduction film of DLC, can significantly improve the heat dispersion of LED module, and double-deck DLC membrane structure thermal diffusivity is better than single thin film structure; The thermal coefficient of expansion of the transparent heat conduction film of DLC and sapphire approach, and encapsulate more safe and reliable; This structure is conducive to reduce the total reflection of light, improves light extraction efficiency, reduces the generation of heat simultaneously.
The beneficial effects of the utility model are: 1) adopt sapphire surface processed wafer as multi-chip modules substrate, the light that active layer sends can see through substrate, make the LED chip module can comprehensive bright dipping; 2) diamond like carbon film (DLC) has excellent heat conduction, insulation property, plates the transparent heat conduction film of DLC on sapphire, and the heat that chip produces can be directly transferred to DLC film, and then derives fast by two ends metal electrode.Can significantly improve the heat dispersion of LED module, effectively reduce chip PN junction temperature, avoid chip to damage because of overheated; 3) LED chip is all surrounded by the transparent heat conduction film of DLC up and down, and DLC transparent heat conduction film in top plays the double action of heat conduction and protection chip, and thermal diffusivity is better than single thin film structure; 4) thermal coefficient of expansion of the transparent heat conduction film of DLC and sapphire approach, and have improved the reliability of encapsulation; 5) refractive index of DLC film is between semi-conducting material and sapphire, is conducive to reduce the possibility of the light generation total reflection that chip sends, and improves light extraction efficiency, reduces the generation of heat simultaneously.
(4) accompanying drawing explanation
Fig. 1 is the utility model structural representation;
Fig. 2 is profile.
(5) embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is elaborated.
In conjunction with Fig. 1-2, the comprehensive bright dipping high light efficiency LED module device in the present embodiment is strip, and Fig. 1 is LED device structural representation in the longitudinal direction, the profile that Fig. 2 is Width.This device is comprised of sapphire substrate 1, the transparent heat conduction film 2 of DLC, prefabricated metal electrode 3, chip 4, wire 5 and fluorescent glue 6.In embodiment, sapphire substrate 1 is strip sapphire polished silicon wafer, wafer length 10-100mm, width 0.1-10mm, thickness 0.2-2mm.Surface is after processing is processed, and surface roughness is Ra0.1-400nm.By PECVD method, at sapphire substrate one side surface, plate the transparent heat conduction film 2 of one deck DLC, on the transparent heat conduction film of sapphire substrate two ends DLC, make metal electrode 3, be used as the lead-in wire being connected with external power source.With crystal-bonding adhesive, one core assembly sheet 4 is bonded on the transparent heat conduction film of DLC.Between chip, by wire 5, interconnect, chipset two end electrodes is connected with prefabricated metal electrode 3 with wire.On the sapphire substrate of bonding chip, plate the transparent heat conduction film of one deck DLC, finally, at the outside coated one deck fluorescent glue 6 of the whole LED module device except reserved metal electrode, the comprehensive high light efficiency LED module of strip device so far completes again.
In this LED module device architecture, the light that chip sends can comprehensively send, and the transparent heat conduction thermal conductivity of thin film of DLC is high, and the heat that chip produces can be transmitted to metal electrode by the transparent heat conduction film of DLC very soon, and then outwards derives.In addition, the transparent heat conduction film refractive index of DLC is 18-2.2, between semi-conducting material and sapphire, can reduce the total reflection of light, increases light emission rate, reduces heat generation.By above structure, can obtain the efficient LED module device of comprehensive bright dipping.
The utility model is only introduced a kind of LED module device, and this introduction is only applicable to the understanding to the utility model principle.Therefore, for those of ordinary skill in the art, in the situation that not departing from substantive characteristics of the present utility model, may embodiment is out of shape and be changed, all these distortion and change all should belong to claim protection range of the present utility model.
Claims (6)
1. the efficient LED module device of a comprehensive bright dipping, it is characterized in that it comprises sapphire substrate, on sapphire substrate, be provided with LED chip, the upper and lower two-layer transparent heat conduction film of DLC that is all coated with of LED chip, treat to be coated with the transparent heat conduction film of DLC in fixed chip one side, on the transparent heat conduction film of the DLC of lower floor of LED chip, be manufactured with prefabricated circuit or as with the prefabricated metal electrode of external power source connecting lead wire.
2. the efficient LED module device of a kind of comprehensive bright dipping according to claim 1, is characterized in that described sapphire substrate is two-sided sapphire polished silicon wafer, and polished silicon wafer is rectangle, square or circular.
3. the efficient LED module device of a kind of comprehensive bright dipping according to claim 2, is characterized in that described LED chip is at least one group of identical photochromic or different photochromic chips, between chip, by wire or prefabricated circuit, is realized and being interconnected.
4. the efficient LED module device of a kind of comprehensive bright dipping according to claim 3, is characterized in that described LED chip is fixed on the transparent heat conduction film of DLC with the form of formal dress or upside-down mounting.
5. the efficient LED module device of a kind of comprehensive bright dipping according to claim 4, is characterized in that described LED chip fixes on the transparent heat conduction film of DLC with crystal-bonding adhesive or eutectic solid welding.
6. the efficient LED module device of a kind of comprehensive bright dipping according to claim 5, is characterized in that the fluorescent material that the described transparent heat conduction film of DLC outside is coated with fluorescent glue or evenly sprays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420047465.8U CN203746850U (en) | 2014-01-26 | 2014-01-26 | High-efficiency LED module group device capable of omnibearing light emission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420047465.8U CN203746850U (en) | 2014-01-26 | 2014-01-26 | High-efficiency LED module group device capable of omnibearing light emission |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203746850U true CN203746850U (en) | 2014-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420047465.8U Expired - Lifetime CN203746850U (en) | 2014-01-26 | 2014-01-26 | High-efficiency LED module group device capable of omnibearing light emission |
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| Country | Link |
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| CN (1) | CN203746850U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794602A (en) * | 2014-01-26 | 2014-05-14 | 哈尔滨鎏霞光电技术有限公司 | All-directional light-outlet efficient LED module device |
| WO2016049938A1 (en) * | 2014-09-30 | 2016-04-07 | 东莞保明亮环保科技有限公司 | Omnidirectional led light source and manufacturing method therefor |
-
2014
- 2014-01-26 CN CN201420047465.8U patent/CN203746850U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794602A (en) * | 2014-01-26 | 2014-05-14 | 哈尔滨鎏霞光电技术有限公司 | All-directional light-outlet efficient LED module device |
| WO2016049938A1 (en) * | 2014-09-30 | 2016-04-07 | 东莞保明亮环保科技有限公司 | Omnidirectional led light source and manufacturing method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: All-directional light-outlet efficient LED module device Effective date of registration: 20180921 Granted publication date: 20140730 Pledgee: Longjiang bank Limited by Share Ltd. Harbin Development Zone sub branch Pledgor: HARBIN LIUXIA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: 2018990000855 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20200509 Granted publication date: 20140730 Pledgee: Longjiang bank Limited by Share Ltd. Harbin Development Zone sub branch Pledgor: HARBIN LIUXIA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: 2018990000855 |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140730 |