CN203360620U - Graphite crucible and single crystal furnace comprising same - Google Patents
Graphite crucible and single crystal furnace comprising same Download PDFInfo
- Publication number
- CN203360620U CN203360620U CN 201320419405 CN201320419405U CN203360620U CN 203360620 U CN203360620 U CN 203360620U CN 201320419405 CN201320419405 CN 201320419405 CN 201320419405 U CN201320419405 U CN 201320419405U CN 203360620 U CN203360620 U CN 203360620U
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- CN
- China
- Prior art keywords
- plumbago crucible
- butt seam
- graphite crucible
- lobe
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 239000010439 graphite Substances 0.000 title claims abstract description 82
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 229910002804 graphite Inorganic materials 0.000 title abstract description 21
- 241000209456 Plumbago Species 0.000 claims description 61
- 230000000903 blocking effect Effects 0.000 claims description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 231100001010 corrosive Toxicity 0.000 claims description 6
- 239000003518 caustics Substances 0.000 claims description 4
- 210000001364 upper extremity Anatomy 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 230000003245 working effect Effects 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000008595 infiltration Effects 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a graphite crucible and a single crystal furnace comprising the graphite crucible. The graphite crucible comprises a plurality of flap bodies, wherein the flap bodies are provided with butting surfaces; every two adjacent flap bodies are butted by the butting surfaces; a butt seam is formed between every two butted butting surfaces; and barrier layers preventing a corrosive material in the graphite crucible from flowing out of the butt seams are embedded into the butt seam. With the adoption of the graphite crucible and the single crystal furnace comprising the graphite crucible, continuous reaction between silicon monoxide and the graphite crucible at the butt seams can be avoided, so that permeation of silicon atoms and silicon carbide formation are avoided, and the service life of the graphite crucible is prolonged.
Description
Technical field
The utility model relates to monocrystalline producing apparatus field, more specifically, and the single crystal growing furnace that relates to a kind of plumbago crucible and comprise it.
Background technology
The thermal field component of single crystal growing furnace comprises furnace wall, well heater, thermal insulation layer, plumbago crucible, quartz crucible etc.; single crystal growing furnace when by vacuum pump, from venting port, discharging silicon monoxide, the mixed gas formed by silicon monoxide and the shielding gas parts such as plumbago crucible of will flowing through.Because plumbago crucible is graphite product, and in stove, temperature is more than 1420 degree, non-stop run is more than 30 hours, silicon monoxide impurity in single crystal growing furnace and the oxygen of quartz crucible become branch and plumbago crucible reaction with silicon, generate carbon monoxide, carbonic acid gas, silicon carbide etc., thus cause the erosion to plumbago crucible.Simultaneously, the oxidizing reaction of quartz crucible and plumbago crucible contact part, make Siliciumatom be penetrated into the top layer of plumbago crucible, forms one deck silicon carbide layer, causes the crucible fracture, and these all can reduce the life-span of plumbago crucible, increase production cost.
Currently used plumbago crucible is three lobes, pintongs or many valve structures; can there be certain gap in the seam crossing of each lobe; the mixed gas of above-mentioned silicon monoxide and shielding gas will pass from gap; due to silicon monoxide meeting and graphite reaction; the graphite at place, gap is constantly corroded; time has been grown and will rupture, and this can reduce the life-span of plumbago crucible too.In order to overcome above-mentioned defect; prior art is the method adopted at place, graphite crucible gap pad graphite paper; with graphite paper, the place, gap at the graphite crucible separates quartz crucible and graphite crucible; make can reach in this way the purpose of protection graphite crucible; but due to graphite paper under the environment of high temperature can with single crystal growing furnace in impurity generation chemical reaction; graphite paper is used once afterwards can hardening, become fragile; use can not continued; single crystal growing furnace need to use new graphite paper upper while once moving, and has increased production cost.
The utility model content
The single crystal growing furnace that the utility model aims to provide a kind of plumbago crucible and comprises it, can improve the work-ing life of plumbago crucible in single crystal growing furnace.
For solving the problems of the technologies described above, according to an aspect of the present utility model, a kind of plumbago crucible is provided, this plumbago crucible, comprise a plurality of lobe bodies, each lobe body all has binding surface, between adjacent two lobe bodies, by binding surface, docks, form butt seam between two binding surfaces that connect, the butt seam place is embedded with the blocking layer that prevents that the interior corrosives of plumbago crucible from flowing out from butt seam.
Further, on the lobe body, be provided with groove, the side walls collapse of groove from binding surface to the lobe body, the groove of two lobe bodies that connect is relatively to install blocking layer.
Further, the degree of depth of groove is greater than the width of butt seam.
Further, groove equates to the internal surface of lobe body and the distance of outside surface.
Further, groove extends to the bottom of lobe body from the upper limb of lobe body, and blocking layer all stops butt seam or part stops.
Further, blocking layer is the molybdenum sheet layer.
Further, the molybdenum sheet layer is perpendicular to butt seam.
According on the other hand of the present utility model, a kind of single crystal growing furnace is provided, this single crystal growing furnace comprises body of heater and plumbago crucible, and plumbago crucible is arranged in body of heater, and plumbago crucible is above-mentioned plumbago crucible.
The application the technical solution of the utility model, plumbago crucible comprises a plurality of lobe bodies, each lobe body all has binding surface, between adjacent two lobe bodies, by binding surface, dock, form butt seam between two binding surfaces that connect, the butt seam place is embedded with the blocking layer that prevents that the interior corrosives of plumbago crucible from flowing out from butt seam.Use plumbago crucible of the present utility model, the corrosive gases that can prevent plumbago crucible inside that arranges on blocking layer constantly flows out from butt seam under the effect of argon gas, prevent that the butt seam place from having silicon monoxide and plumbago crucible endlessly to react, thereby prevent the infiltration of Siliciumatom and the formation of silicon carbide, improve the work-ing life of plumbago crucible.
The accompanying drawing explanation
The accompanying drawing that forms the application's a part is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, does not form improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 has schematically shown the sectional view of plumbago crucible of the present utility model;
Fig. 2 has schematically shown the vertical view of plumbago crucible of the present utility model; And
Fig. 3 has schematically shown the A section enlarged view in Fig. 2.
Description of reference numerals: 10, lobe body; 11, blocking layer; 12, butt seam; 13, groove; 14, binding surface.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is elaborated, but the multitude of different ways that the utility model can be defined by the claims and cover is implemented.
In conjunction with shown in Fig. 1 to Fig. 3, according to embodiment of the present utility model, plumbago crucible comprises a plurality of lobe bodies 10, each lobe body 10 all has binding surface 14, between adjacent two lobe bodies 10, by binding surface 14, dock, form butt seam 12 between two binding surfaces 14 that connect, butt seam 12 places are embedded with the blocking layer 11 that prevents that the interior corrosives of plumbago crucible from flowing out from butt seam 12.Use plumbago crucible of the present utility model, the corrosive gases silicon monoxide that can prevent plumbago crucible inside that arranges on blocking layer 11 constantly flows out from butt seam 12 under the effect of argon gas, prevent that butt seam 12 places from having silicon monoxide and plumbago crucible endlessly to react, thereby prevent the infiltration of Siliciumatom and the formation of silicon carbide, improve the work-ing life of plumbago crucible.
Generally, in the process of pulling monocrystal silicon, need to use argon gas that a large amount of impurity is taken away, can get rid of from plumbago crucible rapidly in order to make impurity, form butt seam 12 between a plurality of lobe bodies 10 of plumbago crucible.Because argon gas stream has been taken away a large amount of impurity in the thermal field, after long-play, argon gas stream accelerates the chemical reaction velocity of plumbago crucible and quartz crucible contact site.In the present embodiment, blocking layer 11 is embedded at butt seam 12 places, can stops to a certain extent the carrying out of above-mentioned chemical reaction, thereby improve the work-ing life of the plumbago crucible of the present embodiment.
In the present embodiment, be provided with groove 13 on lobe body 10, the side walls collapse of groove 13 from binding surface 14 to lobe body 10, the groove 13 of two lobe bodies 10 that connect is relatively to install blocking layer 11, and Stability Analysis of Structures, prevent that blocking layer 11 from coming off.
Preferably, the degree of depth of groove 13 is greater than the width of butt seam 12, can effectively prevent the infiltration of Siliciumatom and the formation of silicon carbide, improves the work-ing life of plumbago crucible.
Preferably, groove 13 arrives the internal surface of lobe body 10 and the distance of outside surface equates, now, inside and outside two portions can be punished at butt seam 12 by each lobe body 10 in blocking layer 11, can prevent that the Siliciumatom of plumbago crucible inside from, to external penetration, further improving the work-ing life of plumbago crucible.
According to the present embodiment, groove 13 extends to the bottom of lobe body 10 from the upper limb of lobe body 10, and blocking layer 11 all stops butt seam 12 or part stops.
Preferably, blocking layer 11 is the molybdenum sheet layer, and molybdenum chemical property at high temperature is very stable, and the fusing point of molybdenum is more than the height of silicon, and at high temperature can not react with silicon-dioxide and carbon, can play good isolation effect, and can reuse.
Preferably, the molybdenum sheet layer is perpendicular to butt seam 12, in the present embodiment, the molybdenum sheet layer is perpendicular to butt seam 12, the degree of sidewall chemical reaction on same thickness direction that can guarantee lobe body 10 is the same, avoid the too fast fracture that causes plumbago crucible that is corroded of sidewall because of the lobe body 10 on a certain specific thicknesses, and then cause the damage of whole plumbago crucible.
According to another embodiment of the present utility model, a kind of single crystal growing furnace is provided, this single crystal growing furnace comprises body of heater and plumbago crucible, and plumbago crucible is arranged in body of heater, and plumbago crucible is above-mentioned plumbago crucible.
From above description, can find out, the utility model the above embodiments have realized following technique effect: the butt seam place between the lobe body is embedded with blocking layer, and blocking layer can prevent the further infiltration of Siliciumatom, and then prevent the formation of silicon carbide, the work-ing life of improving plumbago crucible.Blocking layer is the molybdenum sheet layer, and molybdenum chemical property at high temperature is very stable, and the fusing point of molybdenum is more than the height of silicon, and at high temperature can not react with silicon-dioxide and carbon, can play good isolation effect.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (8)
1. a plumbago crucible, it is characterized in that, comprise a plurality of lobe bodies (10), each described lobe body all has binding surface (14), between adjacent two described lobe bodies (10), by described binding surface (14), dock, form butt seam (12) between two the described binding surfaces (14) that connect, described butt seam (12) locates to be embedded with the blocking layer (11) that prevents that the interior corrosives of described plumbago crucible from flowing out from described butt seam (12).
2. plumbago crucible according to claim 1, it is characterized in that, be provided with groove (13) on described lobe body (10), the side walls collapse of described groove (13) from described binding surface (14) to described lobe body (10), the described groove (13) of two the described lobe bodies (10) that connect is relatively to install described blocking layer (11).
3. plumbago crucible according to claim 2, is characterized in that, the degree of depth of described groove (13) is greater than the width of described butt seam (12).
4. plumbago crucible according to claim 2, is characterized in that, described groove (13) equates to the internal surface of described lobe body (10) and the distance of outside surface.
5. according to the described plumbago crucible of any one in claim 2 to 4, it is characterized in that, described groove (13) extends to the bottom of described lobe body (10) from the upper limb of described lobe body (10), described butt seam (12) is all stopped described blocking layer (11) or part stops.
6. plumbago crucible according to claim 1, is characterized in that, described blocking layer (11) are the molybdenum sheet layer.
7. plumbago crucible according to claim 6, is characterized in that, described molybdenum sheet layer is perpendicular to described butt seam (12).
8. a single crystal growing furnace, comprise body of heater and plumbago crucible, and described plumbago crucible is arranged in described body of heater, it is characterized in that, described plumbago crucible is the described plumbago crucible of any one in claim 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320419405 CN203360620U (en) | 2013-07-12 | 2013-07-12 | Graphite crucible and single crystal furnace comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320419405 CN203360620U (en) | 2013-07-12 | 2013-07-12 | Graphite crucible and single crystal furnace comprising same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203360620U true CN203360620U (en) | 2013-12-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201320419405 Expired - Fee Related CN203360620U (en) | 2013-07-12 | 2013-07-12 | Graphite crucible and single crystal furnace comprising same |
Country Status (1)
| Country | Link |
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| CN (1) | CN203360620U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109898134A (en) * | 2017-12-07 | 2019-06-18 | 有研半导体材料有限公司 | A kind of direct-pulling single crystal furnace thermal field graphite crucible |
| CN112941618A (en) * | 2019-12-11 | 2021-06-11 | 有研半导体材料有限公司 | Method for prolonging service life of graphite crucible |
-
2013
- 2013-07-12 CN CN 201320419405 patent/CN203360620U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109898134A (en) * | 2017-12-07 | 2019-06-18 | 有研半导体材料有限公司 | A kind of direct-pulling single crystal furnace thermal field graphite crucible |
| CN112941618A (en) * | 2019-12-11 | 2021-06-11 | 有研半导体材料有限公司 | Method for prolonging service life of graphite crucible |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131225 |
|
| CX01 | Expiry of patent term | ||
| CU01 | Correction of utility model |
Correction item: Termination upon expiration of patent Correct: Revocation of Patent Expiration and Termination False: On July 28, 2023, the expiration and termination of the 39-volume 3002 patent Number: 30-02 Volume: 39 |
|
| CU01 | Correction of utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131225 |
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| CF01 | Termination of patent right due to non-payment of annual fee |