CN201126829Y - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN201126829Y CN201126829Y CNU2007201826599U CN200720182659U CN201126829Y CN 201126829 Y CN201126829 Y CN 201126829Y CN U2007201826599 U CNU2007201826599 U CN U2007201826599U CN 200720182659 U CN200720182659 U CN 200720182659U CN 201126829 Y CN201126829 Y CN 201126829Y
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- light
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- gallium nitride
- ohmic contact
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Abstract
The utility model relates to a LED, which is designed by combination of a reflection layer, a substrate, a N-type gallium nitride ohmic contact layer, a nitride indium-gallium luminescent layer, a p-type gallium nitride ohmic contact layer, a light-penetration electrical-conductive layer, a P-type metal electrode and a N-type metal electrode, so as to form a plurality of protruding parts periodically-arranged on the substrate, thereby increasing surface area of the substrate. Light-emitting probability after contact of light and the reflection layer is greatly improved via combination of the reflection layer and the substrate, thereby effectively promoting luminescent efficiency of the LED. The multiple cupped parts of the reflection layer firmly combine with multiple protruding parts of the substrate to increase firm combining force of the reflection layer and the substrate, thereby preventing the reflection layer from falling off the substrate, which is suitable for LED or similar structures.
Description
Technical field
The utility model relates to a kind of light-emitting diode, Combination Design by a reflector, a substrate, a n type gallium nitride ohmic contact layer, an InGaN luminescent layer, a P type gallium nitride ohmic contact layer, a light transmission conductive layer, a P type metal electrode and a N type metal electrode, long-pending with the contact surface that increases this substrate and this reflector, and then effectively reach the luminous efficiency that promotes light-emitting diode, and increase the firm adhesion of this reflector and this substrate, so that this reflector is unlikely by coming off on this substrate, and be applicable to light-emitting diode or similar structures.
Background technology
The prosperity of science and technology and make rapid progress, it is very extensive that light-emitting diode is applied to various compact consumption electronic products, and be the material main flow of technology more of making light-emitting diode with the gallium nitride compound.
Please refer to Fig. 1, be the structural representation of existing gallium nitride light-emitting diode.This gallium nitride light-emitting diode is a substrate 10 with sapphire, and this substrate 10 comprises: a first surface 101 and a second surface 102 that is positioned at these first surface 101 opposite sides are formed with a gallium nitride resilient coating 11, a n type gallium nitride ohmic contact layer 12, an InGaN luminescent layer 13, a P type aluminium gallium nitride alloy coating layer 14, a P type gallium nitride ohmic contact layer 15 and a light transmission conductive layer 16 in this second surface 102 of this substrate 10 crystalline substance from bottom to top of heap of stone respectively in regular turn.On this light transmission conductive layer 16 and this n type gallium nitride ohmic contact layer 12, form a positive electrode liner 17 and a negative electrode liner 18 more respectively, plate a metallic reflector 19 of one deck silver (Ag) or aluminium (Al) at last again in this first surface 101 of this substrate 10.
This this metallic reflector 19 can be with the source reflection launched towards this first surface 101 by this InGaN luminescent layer 13 to this second surface 102, yet the surface of this metallic reflector 19 that contacts with this first surface 101 is the plane, easily cause this metallic reflector 19 on this substrate 10, to come off, and this substrate 10 is limited with the surface area of 19 first surface in contact 101 of this metallic reflector, thereby can't effectively promote the luminous efficiency of gallium nitride light-emitting diode.
Summary of the invention
The shortcoming of prior art in view of the above, main purpose of the present utility model is to overcome the deficiencies in the prior art and defective, a kind of light-emitting diode is proposed, be formed with the concaveconvex structure of periodic arrangement in the surface, reflector, long-pending with the contact surface that increases this substrate and this reflector, and then effectively promote the luminous efficiency of light-emitting diode, to promote whole practicality.
Another purpose of the present utility model is, a kind of light-emitting diode is proposed, being formed with a plurality of depressed parts by a reflector is formed with a plurality of protuberances with a substrate and combines, to increase the adhesion of this reflector and this substrate, to avoid this reflector on this substrate, to come off, and reach the effect of firm combination, to promote whole practicality.
For reaching above-mentioned purpose, the utility model provides a kind of light-emitting diode, comprising: a reflector is formed with a plurality of depressed parts of periodic arrangement; One substrate is formed with a plurality of protuberances of periodic arrangement, and the corresponding a plurality of depressed parts that are incorporated into this reflector; One n type gallium nitride ohmic contact layer is formed at the top of this substrate; One InGaN luminescent layer is formed at the top of this n type gallium nitride ohmic contact layer; One P type gallium nitride ohmic contact layer is formed at the top of this InGaN luminescent layer; One light transmission conductive layer is formed at the top of this P type gallium nitride ohmic contact layer; One P type metal electrode is with this light transmission conductive layer electrical couplings; And a N type metal electrode, with this n type gallium nitride ohmic contact layer electrical couplings.
The utlity model has following useful technique effect:
1, the utility model is formed with the concaveconvex structure of periodic arrangement in the surface, reflector, and the contact surface that can increase this substrate and this reflector is long-pending, thereby effectively promotes the luminous efficiency of light-emitting diode, has promoted whole practicality.
2, the utility model is formed with a plurality of depressed parts by a reflector and is formed with a plurality of protuberances with a substrate and combines, increased the adhesion of this reflector and this substrate, avoid this reflector on this substrate, to come off, thereby reach the effect of firm combination, promoted whole practicality.
Other characteristics of the present utility model and specific embodiment can further be understood in the detailed description of following conjunction with figs..
Description of drawings
Fig. 1 is existing light-emitting diode structure schematic diagram;
Fig. 2 is a structural representation of the present utility model;
Fig. 3 is that of the present utility model another implemented illustration.
Symbol description among the figure
10 substrates
101 first surfaces
102 second surfaces
11 gallium nitride resilient coatings
12 n type gallium nitride ohmic contact layers
13 InGaN luminescent layers
14 P type aluminium gallium nitride alloy coating layers
15 P type gallium nitride ohmic contact layers
16 light transmission conductive layer
17 positive electrode liners
18 negative electrode liners
19 metallic reflectors
20 reflector
201 depressed parts
21 substrates
211 protuberances
22 n type gallium nitride ohmic contact layers
23 InGaN luminescent layers
24 P type gallium nitride ohmic contact layers
25 light transmission conductive layer
26 P type metal electrodes
27 N type metal electrodes
Embodiment
Following embodiment further describes viewpoint of the present utility model, but non-to limit category of the present utility model anyways.
Seeing also Fig. 2 is the utility model light-emitting diode structure schematic diagram.This light-emitting diode comprises: a reflector 20, a substrate 21, a n type gallium nitride ohmic contact layer 22, an InGaN luminescent layer 23, a P type gallium nitride ohmic contact layer 24, a light transmission conductive layer 25, a P type metal electrode 26 and a N type metal electrode 27.
This reflector 20 is formed with a plurality of depressed parts 201 of periodic arrangement, and wherein, a plurality of depressed parts 201 in this reflector 20 are in order to increasing the area in this reflector 20, and the thickness in this reflector 20 can between
Between, and this reflector 20 can be and is selected from the group that is made up of silver, aluminium, nickel, titanium, gold, platinum and alloy thereof.
This substrate 21 is formed with a plurality of these protuberances 211 of periodic arrangement, and the corresponding a plurality of depressed parts 201 that are incorporated into this reflector 20, can be in order to bonded area and the adhesion of increase with this reflector 20, this reflector 20 is unlikely by coming off on this substrate 21, and the thickness of this substrate 21 can be between 80～200 μ m, and this substrate 21 can be sapphire (sapphire), zinc selenide (ZnSe), zinc oxide, carborundum (SiC), glass, gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc sulphide (ZnS), selenium zinc sulphide (ZnSSe) wherein any one.
This n type gallium nitride ohmic contact layer 22 is formed at the top of this substrate 21, and in addition, this n type gallium nitride ohmic contact layer 22 also can be aluminum indium nitride gallium layer or gallium indium nitride layer.
This InGaN luminescent layer 23 is formed at the top of this n type gallium nitride ohmic contact layer 22, and wherein, this InGaN luminescent layer 23 also can be an InGaN compound semiconductor layer.
This P type gallium nitride ohmic contact layer 24 be formed at the top of this InGaN luminescent layer 23, and this P type gallium nitride ohmic contact layer 24 also can be an aluminum indium nitride gallium layer or a gallium indium nitride layer.
This light transmission conductive layer 25, be formed at the top of this P type gallium nitride ohmic contact layer 24, and this light transmission conductive layer 25 can be a light transmitting conductive oxide layer, wherein the material of this light transmission conductive layer 25 can be indium oxide, tin oxide, indium oxide molybdenum, indium oxide cerium, zinc oxide, indium zinc oxide, magnesium oxide zinc, tin oxide cadmium, tin indium oxide wherein any one.
This P type metal electrode 26 is with these light transmission conductive layer 25 electrical couplings.
This N type metal electrode 27 is with these n type gallium nitride ohmic contact layer 22 electrical couplings.
Hold structure, light-emitting diode of the present utility model, its characteristics are by this reflector 20, this substrate 21, this n type gallium nitride ohmic contact layer 22, this InGaN luminescent layer 23, this P type gallium nitride ohmic contact layer 24, this light transmission conductive layer 25, the Combination Design of this P type metal electrode 26 and this N type metal electrode 27, wherein, the design that has a plurality of depressed parts 201 of periodic arrangement by the surface in this reflector 20, to increase the surface area in this reflector 20, and the source reflection that will be launched towards a plurality of depressed parts 201 in this reflector 20 by this InGaN luminescent layer 23 is to the direction of this n type gallium nitride ohmic contact layer 22, and then effectively reach the luminous efficiency that promotes light-emitting diode, simultaneously, a plurality of depressed parts 201 in this reflector 20 firmly combine with a plurality of protuberances 211 of this substrate 21, so that this reflector 20 is unlikely by coming off on this substrate 21, to increase its practicality and convenience.
See also Fig. 3, for of the present utility model another implemented illustration.This light-emitting diode comprises: a substrate 21, a n type gallium nitride ohmic contact layer 22, an InGaN luminescent layer 23, a P type gallium nitride ohmic contact layer 24, a light transmission conductive layer 25, a P type metal electrode 26 and a N type metal electrode 27.
This substrate 21 is formed with a plurality of protuberances 211 of periodic arrangement in the bottom surface of this substrate 21.
This n type gallium nitride ohmic contact layer 22 is formed at the top of this substrate 21.
This InGaN luminescent layer 23 is formed at the top of this n type gallium nitride ohmic contact layer 22.
This P type gallium nitride ohmic contact layer 24 is formed at the top of this InGaN luminescent layer 23.
This light transmission conductive layer 25 is formed at the top of this P type gallium nitride ohmic contact layer 24.
This P type metal electrode 26 and these light transmission conductive layer 25 electrical couplings.
This N type metal electrode 27 and these n type gallium nitride ohmic contact layer 22 electrical couplings.
On actual the use, removable this reflector 20 in this embodiment of Fig. 3 with a plurality of protuberances 211 of the periodic arrangement that exposes outside this substrate 21, and increases the surface area of this substrate 21, equally also can reach the luminous efficiency of effective lifting light-emitting diode, to increase its practicality and convenience.
Above-described specific embodiment, only release characteristics of the present utility model and effect in order to example, but not in order to limit the category of implementing of the present utility model, therefore do not breaking away under above-mentioned spirit of the utility model and the technology category, any utilization the utility model institute's disclosure and the equivalence finished changes and modify, the scope that all still should be claims contains.
Claims (10)
1. a light-emitting diode is characterized in that, comprising:
One reflector is formed with a plurality of depressed parts of periodic arrangement;
One substrate is formed with a plurality of protuberances of periodic arrangement, and the corresponding a plurality of depressed parts that are incorporated into this reflector;
One n type gallium nitride ohmic contact layer is formed at the top of this substrate;
One InGaN luminescent layer is formed at the top of this n type gallium nitride ohmic contact layer;
One P type gallium nitride ohmic contact layer is formed at the top of this InGaN luminescent layer;
One light transmission conductive layer is formed at the top of this P type gallium nitride ohmic contact layer;
One P type metal electrode is with this light transmission conductive layer electrical couplings; And
One N type metal electrode is with this n type gallium nitride ohmic contact layer electrical couplings.
2. light-emitting diode as claimed in claim 1 is characterized in that, this reflector is a metallic reflector.
3. light-emitting diode as claimed in claim 2 is characterized in that this metallic reflector is selected from the group that is made up of silver, aluminium, nickel, titanium, gold, platinum and alloy thereof.
4. light-emitting diode as claimed in claim 1 is characterized in that, this substrate be sapphire, zinc oxide, carborundum, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide wherein any one.
5. light-emitting diode as claimed in claim 1 is characterized in that, this light transmission conductive layer is a light transmitting conductive oxide layer.
6. light-emitting diode as claimed in claim 1 is characterized in that, this light transmission conductive layer be indium oxide, tin oxide, indium oxide molybdenum, indium oxide cerium, zinc oxide, indium zinc oxide, magnesium oxide zinc, tin oxide cadmium, tin indium oxide wherein any one.
7. a light-emitting diode is characterized in that, comprising:
One substrate, a plurality of protuberances that are formed with periodic arrangement are in the bottom surface of this substrate;
One n type gallium nitride ohmic contact layer is formed at the top of this substrate;
One InGaN luminescent layer is formed at the top of this n type gallium nitride ohmic contact layer;
One P type gallium nitride ohmic contact layer is formed at the top of this InGaN luminescent layer;
One light transmission conductive layer is formed at the top of this P type gallium nitride ohmic contact layer;
One P type metal electrode is with this light transmission conductive layer electrical couplings; And
One N type metal electrode is with this n type gallium nitride ohmic contact layer electrical couplings.
8. light-emitting diode as claimed in claim 7 is characterized in that, this substrate be sapphire, zinc oxide, carborundum, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide wherein any one.
9. light-emitting diode as claimed in claim 7 is characterized in that, this light transmission conductive layer is a light transmitting conductive oxide layer.
10. light-emitting diode as claimed in claim 7 is characterized in that, this light transmission conductive layer be indium oxide, tin oxide, indium oxide molybdenum, indium oxide cerium, zinc oxide, indium zinc oxide, magnesium oxide zinc, tin oxide cadmium, tin indium oxide wherein any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201826599U CN201126829Y (en) | 2007-10-24 | 2007-10-24 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201826599U CN201126829Y (en) | 2007-10-24 | 2007-10-24 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201126829Y true CN201126829Y (en) | 2008-10-01 |
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ID=40000295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201826599U Expired - Fee Related CN201126829Y (en) | 2007-10-24 | 2007-10-24 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201126829Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130255A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
| CN102484176A (en) * | 2009-09-30 | 2012-05-30 | 京瓷株式会社 | Light Emitting Element And Method For Manufacturing Light Emitting Element |
| CN102705743A (en) * | 2012-06-01 | 2012-10-03 | 明基电通有限公司 | Illuminating device |
| CN106784220A (en) * | 2016-06-22 | 2017-05-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Light emitting diode and preparation method thereof |
-
2007
- 2007-10-24 CN CNU2007201826599U patent/CN201126829Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484176A (en) * | 2009-09-30 | 2012-05-30 | 京瓷株式会社 | Light Emitting Element And Method For Manufacturing Light Emitting Element |
| CN102484176B (en) * | 2009-09-30 | 2014-12-31 | 京瓷株式会社 | Light emitting element and method for manufacturing light emitting element |
| CN102130255A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
| CN102705743A (en) * | 2012-06-01 | 2012-10-03 | 明基电通有限公司 | Illuminating device |
| CN102705743B (en) * | 2012-06-01 | 2014-08-06 | 明基电通有限公司 | Illuminating device |
| CN106784220A (en) * | 2016-06-22 | 2017-05-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Light emitting diode and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081001 Termination date: 20111024 |