CN118957524A - Plasma generating device in magnetron sputtering equipment - Google Patents
Plasma generating device in magnetron sputtering equipment Download PDFInfo
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- CN118957524A CN118957524A CN202411266655.3A CN202411266655A CN118957524A CN 118957524 A CN118957524 A CN 118957524A CN 202411266655 A CN202411266655 A CN 202411266655A CN 118957524 A CN118957524 A CN 118957524A
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- target
- electromagnet
- magnetron sputtering
- plasma generating
- generating device
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000000994 depressogenic effect Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- 230000006872 improvement Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 239000013077 target material Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Abstract
The invention relates to a plasma generating device in magnetron sputtering equipment, which comprises a cavity, wherein a carrier, a target and an electromagnet are sequentially arranged in the cavity from bottom to top; the electromagnet is arranged on the fixed plate, a plurality of circles of through holes are formed in the fixed plate, each circle of through holes comprise a plurality of through holes which are uniformly formed, and the electromagnet is arranged in each through hole; the plasma generating device can adopt a planar target or a special target for sputtering, and can realize the improvement of the uniformity of the film thickness by selectively electrifying the electromagnets on the back surface of the target and adopting a proper magnetron sputtering process; in the life cycle of the target, the electromagnet is moved regularly, the position is adjusted radially, and the magnetic field intensity of the back surface of the target during sputtering can be changed correspondingly, namely, the magnetic field intensity of the original high sputtering rate region is reduced, the magnetic field intensity of the low sputtering rate region is increased, so that the sputtering degree of the target everywhere is balanced, and the target utilization rate is greatly improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a plasma generating device in magnetron sputtering equipment.
Background
Magnetron sputtering is one type of Physical Vapor Deposition (PVD). The basic principle is that Ar is filled under the vacuum condition, ar atoms are ionized into Ar+ ions and electrons e - by argon glow discharge under the high pressure, ar+ bombards a cathode target material under the action of an electric field, and the target material atoms are deposited on the wafer surface to form a film. Electrons E - drift in the direction indicated by E x B under the action of an electromagnetic field, the electrons do spiral motion on the surface of the target material in a similar cycloid shape, are restrained in a plasma area on the surface of the target material, and collide and ionize a large amount of Ar+ in the area to bombard the target material, so that a high deposition rate is realized.
The prior art plasma generating devices generally employ dynamic magnetic control devices and planar targets. Wherein, dynamic magnetic control device is also called as field scanning type magnetic controller, and the schematic diagram of dynamic magnetic control device is shown in fig. 1. Such magnets are smaller than the target diameter but are rotated at low speed (less = 100 rpm) on the back of the cathode so that the field scan covers the entire target. The E x B drift path is physically translated over the cathode surface to average out the inherent sputtering non-uniformity. This is achieved by arranging a magnet behind the cathode (forming a B field at the cathode surface) to be rotated by a motor. By reasonably designing the shape of the magnet array and selecting the rotation axis, the target surface generates more uniform sputtering rate, and the target utilization rate is improved as much as possible.
In layered metal contact or interconnect structures, it is necessary to deposit diffusion barriers of uniform thickness but thin, etc. at the bottom and sidewalls of the vias, trenches. As device dimensions shrink, the aspect ratio of the contact via and trench increases increasingly, and the difficulty of uniform thin layer deposition and filling increases. Atoms sputtered from the target surface move in different directions and are subject to constant changes due to scattering. As shown in fig. 2 (a) and (b), a pinch-off or unfilled void may even be formed in the steep-step via and trench.
In the prior art, a plasma generating device generally comprises a common plane target material, and the coverage rate of a deposited film on a wafer surface with micropores and grooves is very low. In addition, the dynamic magnetic control device adopted by the plasma generating device in the prior art has higher sputtering uniformity in a circular range driven by the magnet during rotation. However, the sputtering rate is lower at the non-parallel position of the magnetic field direction and the target surface, so that the radial sputtering is uneven, and the surface morphology of the target after sputtering for a period of time is shown in fig. 3. The existing dynamic magnetic control device has limited sputtering uniformity on the target surface and low target utilization rate.
Disclosure of Invention
In order to solve the problems, the invention discloses a plasma generating device in a magnetron sputtering device.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
The invention provides a plasma generating device in magnetron sputtering equipment, which comprises a cavity, wherein a carrier, a target material and an electromagnet are sequentially arranged in the cavity from bottom to top; the electromagnet is arranged on the fixed plate, a plurality of circles of hole sites for installing the electromagnet are formed in the fixed plate, each circle of hole sites comprises a plurality of hole sites which are uniformly arranged, and the electromagnet is arranged in each hole site; the electromagnets are connected with a power supply through wires, and one or more electromagnets input the same current.
Further, the hole site in fixed plate center department is circular, and other the hole site is rectangular shape, and the length direction of hole site radially sets up, and the hole site bottom inwards is provided with limit flange, and the position of electro-magnet is adjustable, sets up the screw hole on the electro-magnet, installs cylindrical electro-magnet with the bolt in rectangular shape's hole site. When the electromagnet needs to be adjusted, the bolt is unscrewed, and the electromagnet is moved to a proper position and then locked.
As a specific embodiment of the invention, the electromagnets of each turn are outwardly flared by the same distance.
The invention also provides a magnetron sputtering method adopting the plasma generating device in the magnetron sputtering equipment, which comprises the following steps: adjusting the distance between the wafer and the target to enable the distance between the wafer and the target to be 100-150mm, and adjusting the input current of the electromagnet to enable the total input power of the target to be 8000W; introducing argon, keeping the pressure at 3.0-4.0Torr, sputtering for 750-850s, and depositing on the surface of the wafer to obtain a metal film; the input current of the adjusting electromagnet is specifically as follows: one or more electromagnets input the same current, the current is 0-1.5A.
Further, the flow rate of the argon is 45-65sccm.
Further, the input current of the adjusting electromagnet is specifically: one or a circle of electromagnets inputs the same current, and the current is 0-1.5A.
Further, after sputtering for N times, the corresponding electromagnet on the target is sunken, and the position of the electromagnet is adjusted so that the electromagnet moves to the position where the target is not sunken.
The invention also provides magnetron sputtering equipment which comprises the plasma generating device.
The beneficial effects of the invention are as follows:
The invention can adopt a planar target material to sputter, and can realize the improvement of the uniformity of the film thickness by selectively electrifying a plurality of electromagnets on the back surface of the target material and adopting a proper magnetron sputtering process; in the life cycle of the target, the electromagnet is moved regularly, the position is adjusted radially, and the magnetic field intensity of the back surface of the target during sputtering can be changed correspondingly, namely, the magnetic field intensity of the original high sputtering rate region is reduced, the magnetic field intensity of the low sputtering rate region is increased, so that the sputtering degree of the target everywhere is balanced, and the target utilization rate is greatly improved.
In the invention, a special target material can be adopted, so that the step coverage rate of the wafer surface film with micropores and grooves is obviously improved. In addition, besides the common planar target material, a special target material can be adopted, and the film thickness uniformity can be improved by selectively electrifying the small electromagnets corresponding to the back surface of the small target material and adopting a proper magnetron sputtering process.
Drawings
FIG. 1 is a schematic diagram of a dynamic magnetic control device;
FIG. 2 is the effect of non-directional and directional sputtering on via hole, trench step coverage, (a) non-directional, (b) directional;
FIG. 3 surface topography of the target after sputtering for a period of time;
FIG. 4 is a schematic view of a planar target structure;
FIG. 5 is a schematic view of a specific target structure;
FIG. 6 is a schematic view of a plasma generating apparatus in a magnetron sputtering apparatus;
FIG. 7 is a schematic view of the structure of the electromagnet position;
FIG. 8 is a cross-sectional view of A-A of FIG. 7;
FIG. 9 is an enlarged view of a portion of FIG. 8;
FIG. 10 is a schematic structural view of an electromagnet;
FIG. 11 is a schematic view of a thin film measurement point;
list of drawing identifiers:
a. A substrate; b. a front face; c. a groove; d. a target material; e. a wafer; f. a carrier; g. an electromagnet; h. a threaded hole; i. a fixing plate; j. hole sites; k. a wire; l, limit flange.
Detailed Description
The present invention is further illustrated in the following drawings and detailed description, which are to be understood as being merely illustrative of the invention and not limiting the scope of the invention.
During etching, only the metal target material near the electromagnet accessory is consumed. As shown in fig. 7, the electromagnet is divided into four turns, and the position of the electromagnet of each turn can be adjusted. The electromagnets of each circle can be folded or unfolded, and after a period of work, the positions of the electromagnets can be moved to the position where the target is not bombarded, so that the target can be further utilized, and the utilization rate of the target is improved.
Example 1
The plasma generating device (shown in figures 6-10) provided by the application comprises a cavity, wherein a carrier f, a target d and an electromagnet g are sequentially arranged in the cavity from bottom to top; the electromagnet g is arranged on the fixed plate i, the fixed plate i is provided with five circles of hole sites j for installing the electromagnet g, each circle of hole sites j comprises a hole site j, each circle of hole sites j comprises a plurality of uniformly arranged hole sites j, each circle of hole sites j at the center of the fixed plate i is circular, the rest of hole sites j are long-strip-shaped, the length direction of each hole site j is arranged along the radial direction, the bottom of each hole site j is internally provided with a limit flange L, the position of the electromagnet g is adjustable, the electromagnet g is provided with a threaded hole h, and the cylindrical electromagnet g is arranged in the long-strip-shaped hole site j by bolts. When the electromagnet g needs to be adjusted, the bolt is unscrewed, and the electromagnet g is moved to a proper position and then locked.
As a specific embodiment of the present invention, the electromagnet g of each turn is outwardly expanded by the same distance.
The electromagnets g are connected to a power source via conductors k, and one or more electromagnets g supply the same current.
Example 2
The plasma generating device provided by the application, such as 61 electromagnets g, is combined with the existing planar target (see figure 4) or special target (see figure 5) to carry out magnetron sputtering coating test. The target d is made of aluminum (copper, tantalum, gold, titanium, nickel, silver and the like), the distance between the wafer e and the target d is 120mm, and the wafer e is an 8-inch silicon wafer. The same current 1 is input to the second round of small electromagnets g and the center electromagnet g from inside to outside, the same current 2 is input to the third round of small electromagnets g from inside to outside, the same current 3 is input to the fourth round of small electromagnets g from inside to outside, and the same current 4 is input to the fifth round of small electromagnets g from inside to outside. Setting the power of the power supply of the planar target material to 8000W; the power supply power of the special target is also set to be 8000W, and the power supply is simultaneously connected with all small targets in the whole special target in parallel, so that the input power of all the small targets is the same when the special target is electrified, and the total power is 8000W. Argon flow is 50sccm, cavity pressure is kept at 3-4 mTorr, sputtering time is 800s, and an aluminum film is obtained through deposition.
The special target shown in fig. 5 includes a substrate a, a target d, and a conductive plate (not shown).
The substrate, one side of the substrate a close to the wafer e is a front side b, the other side is a back side, and a plurality of grooves c are formed in the front side;
the target material d is arranged in the groove c and is 1mm or more lower than the surface of the front surface b;
and a conductive plate mounted on the back surface of the substrate a, and connected with the target d.
The distribution of the film thickness on the surface of the wafer e was observed under a scanning electron microscope, and the film measurement points are shown in fig. 11. Film thickness uniformity was calculated as the standard deviation of film thickness at 49 points divided by the average of film thickness at 49 points. The input currents 1, 2, 3 and 4 corresponding to the small electromagnets of each circle and the film thickness uniformity are shown in Table 1.
TABLE 1
As can be seen from table 1, when the current combinations are adopted for the energizing currents of the electromagnets of each circle, that is, when the magnetic field intensity near the target material of the inner circle increases and the magnetic field intensity near the target material of the outer circle decreases, the uniformity of the film thickness is significantly deteriorated; when the magnetic field strength near the inner ring target is reduced and the magnetic field strength near the outer ring target is increased, the film thickness uniformity is significantly improved, and the optimal film thickness uniformity is less than 1.5%, which is 1.265%. In addition, when the plasma generating device comprises a plurality of small electromagnets and special targets, the overall film thickness uniformity is slightly better than that of the plasma generating device formed by the small electromagnets and the planar targets.
Example 3
The plasma generating device provided by the application, namely 61 electromagnets are combined with the existing planar target (see figure 4), so as to carry out magnetron sputtering coating experiments. The planar target material is aluminum (copper, tantalum, gold, titanium, nickel, silver and the like), the distance between the wafer e and the target material d is 120mm, and the wafer e adopts an 8-inch silicon wafer. The small electromagnets in the center are respectively input with the same current 2 from inside to outside, the small electromagnets in the third round from inside to outside are respectively input with the same current 3, the small electromagnets in the fourth round from inside to outside are respectively input with the same current 4, and the small electromagnets in the fifth round from inside to outside are respectively input with the same current 5. Setting the power of the power supply of the planar target material to 8000W; the power supply power of the special target is also set to be 8000W, and the power supply is simultaneously connected with all the small targets in the whole special target in parallel, so that the input power of all the small targets is the same when the special target is electrified, namely the total power is 8000W. The argon flow is 50sccm, the cavity pressure is kept at 3-4mTorr, the sputtering time is 800s, and the aluminum film is obtained through deposition. The film thickness uniformity is shown in Table 2.
TABLE 2
As can be seen from table 2, when the input current of the third electromagnet was 0A and the input currents of the other electromagnets were 1A, the uniformity of the deposited film thickness was the best 1.275%.
It should be noted that the foregoing merely illustrates the technical idea of the present invention and is not intended to limit the scope of the present invention, and that a person skilled in the art may make several improvements and modifications without departing from the principles of the present invention, which fall within the scope of the claims of the present invention.
Claims (8)
1. The plasma generating device in the magnetron sputtering equipment is characterized by comprising a cavity, wherein a carrier, a target and an electromagnet are sequentially arranged in the cavity from bottom to top; the electromagnet is arranged on the fixed plate, a plurality of circles of hole sites for installing the electromagnet are formed in the fixed plate, each circle of hole sites comprises one or more hole sites which are uniformly arranged, and the electromagnet is arranged in each hole site; one and/or more electromagnets input the same current.
2. The plasma generating apparatus in a magnetron sputtering device according to claim 1, wherein the hole at the center of the fixed plate is circular, the remaining holes are elongated, and the length direction of the hole is arranged in the radial direction.
3. A plasma generating device in a magnetron sputtering apparatus as claimed in claim 1, wherein the hole site bottom is provided with a limit flange inwardly.
4. A magnetron sputtering method using the plasma generating apparatus in the magnetron sputtering apparatus as claimed in any one of claims 1 to 3, characterized by comprising the steps of: adjusting the distance between the wafer and the target to enable the distance between the wafer and the target to be 100-150mm, and adjusting the input current of the electromagnet to enable the total input power of the target to be 8000W; introducing argon, keeping the pressure at 3.0-4.0Torr, sputtering for 750-850s, and depositing on the surface of the wafer to obtain a metal film; the input current of the adjusting electromagnet is specifically as follows: one or more electromagnets input the same current, the current is 0-1.5A.
5. The magnetron sputtering method of claim 4, wherein the flow rate of the argon gas is 45-65sccm.
6. The magnetron sputtering method using the plasma generating device in the magnetron sputtering apparatus as claimed in claim 4, wherein the input current of the adjusting electromagnet is specifically: one or a circle of electromagnets inputs the same current, and the current is 0-1.5A.
7. The magnetron sputtering method using the plasma generating device in the magnetron sputtering apparatus according to claim 4, wherein after N times of sputtering, the corresponding electromagnet on the target is depressed, and the position of the electromagnet is adjusted so that the electromagnet is moved to a position where the target is not depressed.
8. A magnetron sputtering apparatus comprising a plasma generating device as claimed in any one of claims 1 to 3.
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118957524A true CN118957524A (en) | 2024-11-15 |
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