CN118249823A - Radio frequency front-end antenna integrated module, communication circuit and electronic equipment - Google Patents
Radio frequency front-end antenna integrated module, communication circuit and electronic equipment Download PDFInfo
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- CN118249823A CN118249823A CN202410374278.9A CN202410374278A CN118249823A CN 118249823 A CN118249823 A CN 118249823A CN 202410374278 A CN202410374278 A CN 202410374278A CN 118249823 A CN118249823 A CN 118249823A
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0064—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with separate antennas for the more than one band
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
- H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B11/00—Transmission systems employing sonic, ultrasonic or infrasonic waves
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Abstract
The application provides a radio frequency front-end antenna integrated module, a communication circuit and electronic equipment. The radio frequency front end antenna integrated module comprises an integrated equipment front end module and an antenna module; the radio frequency front end module is used for receiving a first radio frequency signal, processing the first radio frequency signal to obtain a second radio frequency signal, and outputting the second radio frequency signal; the antenna module comprises a filter and a magneto-electric antenna which are integrated into a whole, wherein the filter is used for receiving the second radio frequency signal, generating a first sound wave signal passing through a first preset frequency band according to the second radio frequency signal, and the magneto-electric antenna is used for supporting a first electromagnetic wave signal of the first preset frequency band according to the first sound wave signal of the first preset frequency band.
Description
Technical Field
The present application relates to the field of communications technologies, and in particular, to a radio frequency front end antenna integrated module, a communication circuit, and an electronic device.
Background
Electronic devices with communication functions are widely used. For example, the communication function of the electronic device may be applied to implement a scenario such as a voice call or a video call. However, the radio frequency front end antenna integrated module in the communication circuit in the electronic equipment has more devices and low integration level, and miniaturization of the electronic equipment is not utilized.
Disclosure of Invention
In a first aspect, an embodiment of the present application provides a radio frequency front end antenna integrated module, where the radio frequency front end antenna integrated module includes:
The radio frequency front end module is used for receiving a first radio frequency signal, processing the first radio frequency signal to obtain a second radio frequency signal and outputting the second radio frequency signal; and
The antenna module comprises a filter and a magnetoelectric antenna which are integrated into a whole, wherein the filter is used for receiving the second radio frequency signal, generating a first sound wave signal passing through a first preset frequency band according to the second radio frequency signal, and the magnetoelectric antenna is used for supporting a first electromagnetic wave signal of the first preset frequency band according to the first sound wave signal of the first preset frequency band.
In a second aspect, embodiments of the present application provide a communication circuit, including:
a baseband chip;
the transceiver is electrically connected with the baseband chip; and
The rf front-end antenna integrated module of the first aspect, wherein the rf front-end antenna integrated module is electrically connected to the transceiver.
In a third aspect, embodiments of the present application provide an electronic device comprising a communication circuit as described in the second aspect.
In summary, the rf front-end antenna integrated module provided in an embodiment of the present application includes an antenna module, where the antenna module includes a filter and a magneto-electric antenna that are integrated into one body, so that the antenna module has functions of filtering and having an antenna, and no separate filtering device and no frequency-selective switch are required, thereby realizing miniaturization of the antenna module. Because the antenna module has the wave filter, the wave filter can realize the frequency-selecting switch frequency-selecting filtering function of the radio frequency front end module in the prior art, the modularization of the antenna module and the radio frequency front end module can be realized, namely, the antenna module and the radio frequency front end module can be integrated in one chip (namely, the radio frequency front end antenna integrated module). In addition, because the antenna module comprises the integrated filter and the magnetoelectric antenna, a separate filter device is not needed, and a frequency selecting switch in the radio frequency front module in the related technology is not needed, so that the filter device and the magnetoelectric antenna are not needed to be connected together by using a connecting device, and the number of devices of the radio frequency front end antenna integrated module is greatly reduced. In addition, the antenna module in the radio frequency front end antenna integrated module comprises a magnetoelectric antenna, and does not depend on a metal middle frame of the electronic equipment to serve as a radiator, so that when the radio frequency front end antenna integrated module is applied to the electronic equipment, the layout in the electronic equipment is flexible. Further, the filter of the antenna module may pass through the first acoustic signal of the first preset frequency band, so that the filter is also regarded as integrating the filtering function in the antenna module. The antenna module and the antenna module have high isolation and high out-of-band rejection of the acoustic filter. When the radio frequency front end antenna integrated module is applied to a communication circuit comprising a transmitting path (Tx) and a receiving path (Rx), the probability of mutual interference and coupling between the transmitting path and the receiving path is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a communication circuit according to an embodiment of the application;
fig. 2 is a schematic architecture diagram of the rf front-end antenna integrated module provided in fig. 1 according to an embodiment;
Fig. 3 is a schematic structural diagram of an rf front-end antenna integrated module according to an embodiment of fig. 2;
Fig. 4 is a schematic architecture diagram of the rf front-end antenna integrated module provided in fig. 1 according to another embodiment;
fig. 5 is a schematic structural diagram of an antenna module according to an embodiment of the present application;
Fig. 6 is a detailed identification schematic diagram of the antenna module shown in fig. 5;
FIG. 7 is a schematic cross-sectional view of an antenna module according to an embodiment;
FIG. 8 is a schematic cross-sectional view taken along line I-I of FIG. 5 in another embodiment;
FIG. 9 is a schematic cross-sectional view of an antenna module according to another embodiment;
fig. 10 is a schematic side view of an antenna module according to an embodiment of the application;
Fig. 11 is a schematic side view of an antenna module according to another embodiment of the application;
FIG. 12 is a schematic cross-sectional view of a magnetostrictive layer in an antenna module according to an embodiment;
fig. 13 is a schematic structural diagram of an antenna module according to another embodiment of the present application;
Fig. 14 is a schematic structural diagram of an antenna module according to an embodiment of the present application;
fig. 15 is a schematic diagram of a portion of the components of the antenna module shown in fig. 14;
fig. 16 is a schematic diagram of identification of additional parts of the antenna module shown in fig. 14;
Fig. 17 is a schematic cross-sectional view of the antenna module shown in fig. 14 along line I-I in an embodiment;
fig. 18 is a schematic cross-sectional view of the antenna module shown in fig. 14 along line I-I in another embodiment;
Fig. 19 is a schematic cross-sectional view of the antenna module shown in fig. 14 along line I-I in yet another embodiment;
Fig. 20 is a schematic structural diagram of an antenna module according to another embodiment of the present application;
Fig. 21 is a schematic diagram of a portion of the components of the antenna module shown in fig. 20;
fig. 22 is a schematic diagram of identification of additional parts of the antenna module shown in fig. 20;
Fig. 23 is a schematic cross-sectional view of the antenna module shown in fig. 20 along line II-II in an embodiment;
fig. 24 is a schematic diagram of an antenna module according to another embodiment of the present application;
FIG. 25 is a schematic cross-sectional view of the structure of FIG. 24 along line III-III;
FIG. 26 is a schematic cross-sectional view of a magnetostrictive portion of a magnetostrictive layer of an antenna module according to an embodiment;
Fig. 27 is a schematic diagram of an electronic device according to an embodiment of the present application.
Detailed Description
The technical scheme of the present application will be clearly and completely described below with reference to the accompanying drawings. It should be apparent that the described embodiments of the application are only some embodiments, but not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive effort, based on the embodiments provided by the present application are within the scope of protection of the present application.
Reference in the specification to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those skilled in the art will appreciate explicitly and implicitly that the described embodiments of the application may be combined with other embodiments.
The terms first, second and the like in the description and in the claims and in the above-described figures are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example: an assembly or device incorporating one or more components is not limited to the listed one or more components, but may alternatively include one or more components not listed but inherent to the illustrated product, or one or more components that may be provided based on the illustrated functionality.
Referring to fig. 1, fig. 1 is a schematic diagram of a communication circuit according to an embodiment of the application. The communication circuit 2 includes a baseband chip 90, a transceiver 40, and a radio frequency front end antenna integrated module 80. The transceiver 40 is electrically connected to the baseband chip 90. The rf front-end antenna integrated module 80 is electrically connected to the transceiver 40. In this embodiment, the rf front-end antenna integrated module 80 includes an rf front-end module 810 and an antenna module 10. The rf front-end module 810 is electrically connected to the transceiver 40, and the antenna module 10 is electrically connected to the rf front-end module 810. The Baseband (Baseband) chip 90 is configured to convert a first analog signal into a first digital signal. In an embodiment, the first analog signal may be an analog signal characterizing speech information. The Transceiver 40 (transmitter) is configured to convert the first digital signal into a first radio frequency signal. The rf front-end module 810 is configured to process the first rf signal to obtain a second rf signal. The manner in which the rf front-end module 810 processes the first rf signal may be, but is not limited to, power amplifying the first rf signal to obtain a second rf signal. The antenna module 10 is configured to receive a second radio frequency signal, generate a first acoustic wave signal according to the second radio frequency signal and pass through a first preset frequency band, and support a first electromagnetic wave signal of the first preset frequency band according to the acoustic wave signal of the first preset frequency band.
The following describes the rf front-end antenna integrated module 80 according to the embodiment of the present application in detail. Referring to fig. 1 and fig. 2 together, fig. 2 is a schematic diagram of an architecture of the rf front-end antenna integrated module provided in fig. 1 according to an embodiment. The rf front-end antenna integrated module 80 includes an rf front-end module 810 and an antenna module 10 integrated together. The rf front-end module 810 is configured to receive a first rf signal, process the first rf signal to obtain a second rf signal, and output the second rf signal. The antenna module 10 includes an integrated filter 10a and a magneto-electric antenna 10b, where the filter 10a is configured to receive the second radio frequency signal, generate a first acoustic wave signal according to the second radio frequency signal and pass through a first preset frequency band, and the magneto-electric antenna 10b is configured to support a first electromagnetic wave signal of the first preset frequency band according to the first acoustic wave signal of the first preset frequency band.
The rf front-end module 810 is configured to process the first rf signal to obtain a second rf signal. The manner in which the rf front-end module 810 processes the first rf signal may be, but is not limited to, power amplifying the first rf signal to obtain a second rf signal.
The filter 10a is configured to generate and pass a first acoustic wave signal of a first preset frequency band according to the second radio frequency signal, where the acoustic wave signal outside the first preset frequency band has no way to pass. That is, the filter 10a may pass a first acoustic signal of a first preset frequency band and filter out acoustic signals outside the first preset frequency band.
In the related art electronic device (e.g., a mobile phone), the antenna module and the rf front-end module are two devices independent of each other, and cannot be integrated into one device (i.e., look like a chip from the outside). Generally, after the antenna module is designed, the rf module adapted to the antenna module is designed separately. For example, the antenna module in the related art generally includes a radiator, which is generally formed by using a metal middle frame of an electronic device, or the radiator is a printed circuit board radiator, or a laser direct-molding radiator, etc. The radiator in the related art has larger volume and relatively fixed position. Therefore, in the related art, the antenna module and the rf module cannot be integrated into one device.
In this embodiment, the antenna module 10 includes the filter 10a and the magneto-electric antenna 10b integrated into one body, so that the size is small, and the miniaturization of the antenna module 10 is achieved. Since the antenna module 10 has the function of the magnetoelectric antenna 10b and the filter 10a can realize the frequency-selecting function of the frequency-selecting switch in the rf front-end module in the prior art, the antenna module 10 and the rf front-end module 810 can be modularized, i.e., the antenna module 10 and the rf front-end module 810 can be integrated in one chip (i.e., the rf front-end antenna integrated module 80).
In addition, since the antenna module 10 includes the filter 10a and the magneto-electric antenna 10b integrated into one body, a separate filter device is not required and a frequency selecting switch in the radio frequency front module in the related art is not required, so that a connecting device is not required to connect the filter 10a and the magneto-electric antenna 10b together, and the volume of the antenna module 10 is small. Therefore, the number of devices of the rf front-end antenna integrated module 80 can be greatly reduced. In addition, the conventional antenna uses a metal middle frame as a radiator, so that the position of the radiator in the antenna is relatively fixed. In the rf front-end antenna integrated module 80 according to the embodiment of the present application, the antenna module 10 includes the magnetoelectric antenna 10b, and the magnetoelectric antenna 10b does not depend on the metal middle frame, so that the rf front-end antenna integrated module 80 according to the embodiment of the present application does not need to consider the position distribution of the magnetoelectric antenna 10b, and when the rf front-end antenna integrated module 80 is applied to the electronic device 1, the layout in the electronic device 1 is more flexible.
In addition, the antenna module 10 includes a filter 10a and a magneto-electric antenna 10b that are integrated, and the filter 10a of the antenna module 10 can pass through a first acoustic signal of a first preset frequency band, so that the antenna module 10 is also regarded as having a filtering function integrated therein. The antenna module 10 has a high isolation and a high out-of-band rejection of the acoustic filter 10a itself between the antenna modules 10. When the rf front-end antenna integrated module 80 is applied to the communication circuit 2 including the transmit path (Tx) and the receive path (Rx), the probability of mutual interference and coupling between the transmit path and the receive path is reduced.
In summary, the rf front-end antenna integrated module 80 according to an embodiment of the present application includes the antenna module 10, and the antenna module 10 includes the filter 10a and the magneto-electric antenna 10b integrated together, so that the antenna module 10 has the functions of filtering and having an antenna, and no separate filter device and no frequency-selective switch are required, thereby realizing miniaturization of the antenna module 10. Since the antenna module 10 has the filter 10a, the filter 10a can realize the frequency-selecting function of the frequency-selecting switch of the rf front-end module in the prior art, so that the antenna module 10 and the rf front-end module 810 can be modularized, that is, the antenna module 10 and the rf front-end module 810 can be integrated in one chip (that is, the rf front-end antenna integrated module 80). In addition, since the antenna module 10 includes the filter 10a and the magneto-electric antenna 10b integrated together, a separate filter device is not required and a frequency selecting switch in the rf front module in the related art is not required, so that a connecting device is not required to connect the filter 10a and the magneto-electric antenna 10b together, and thus, the number of devices of the rf front-end antenna integrated module 80 can be greatly reduced. In addition, the antenna module 10 in the rf front-end antenna integrated module 80 includes the magnetoelectric antenna 10b, and does not depend on the metal middle frame of the electronic device 1 as a radiator, so that when the rf front-end antenna integrated module 80 is applied to the electronic device 1, the layout in the electronic device 1 is flexible. Further, the filter 10a of the antenna module 10 may pass the first acoustic signal of the first preset frequency band, so that the filter function is also regarded as being integrated in the antenna module 10. The antenna module 10 has a high isolation and a high out-of-band rejection of the acoustic filter 10a itself between the antenna modules 10. When the rf front-end antenna integrated module 80 is applied to the communication circuit 2 including the transmit path (Tx) and the receive path (Rx), the probability of mutual interference and coupling between the transmit path and the receive path is reduced.
Referring to fig. 2 and fig. 3 together, fig. 3 is a schematic diagram of a specific structure of an rf front-end antenna integrated module according to an embodiment of fig. 2. The rf front-end module 810 includes a first switch 811 and a plurality of power amplifiers 812. The first switch 811 includes a first receiving terminal 8111 and a plurality of first output terminals 8112. The first receiving terminal 8111 may be electrically connected to one of the plurality of first output terminals 8112, and the first receiving terminal 8111 is configured to receive a second radio frequency signal. The power amplifiers 812 are electrically connected to the first output ends 8112 in a one-to-one correspondence, and the power amplifiers 812 are configured to power amplify the received second radio frequency signals. Correspondingly, the rf front-end antenna integrated module 80 includes a plurality of antenna modules 10, where the antenna modules 10 are electrically connected to the power amplifier 812 in a one-to-one correspondence manner, and are configured to support the first electromagnetic wave signal according to the second rf signal amplified by the power amplifier.
In this embodiment, the first switch 811 is exemplified as a single pole three throw switch, that is, the first switch 811 includes one first receiving end 8111 and three first output ends 8112, it will be understood that the number of the first output ends 8112 may be other numbers, and the number of the first output ends 8112 is not limited to three, and the number of the first output ends 8112 is greater than or equal to 2.
The first receiving terminal 8111 may be electrically connected with one of the plurality of first output terminals 8112, and a signal received by the first receiving terminal 8111 may be transmitted to the one of the plurality of first output terminals 8112 when the first receiving terminal 8111 is electrically connected with the one of the plurality of first output terminals 8112.
The number of power amplifiers 812 (PA) is equal to the number of first output terminals 8112 in the first switch 811. The power amplifiers 812 are electrically connected to the first output 8112, and one power amplifier 812 is electrically connected to one first output 8112, and different power amplifiers 812 are electrically connected to different first outputs 8112.
In this embodiment, the antenna module 10 is electrically connected to the power amplifier 812, and different antenna modules 10 are electrically connected to different power amplifiers 812. In this embodiment, taking the number of the first output terminals 8112 as three as an example, the number of the antenna modules 10 is correspondingly three. The frequency bands supported by each antenna module 10 of the plurality of antenna modules 10 may be the same or different. Therefore, in the rf front-end antenna integrated module 80 according to the embodiment of the present application, the power amplifier 812 may amplify the received second rf signal, so that the antenna module 10 transmits the first electromagnetic wave signal according to the amplified second rf signal, and the quality of the first electromagnetic wave signal is better. Therefore, the rf front-end antenna integrated module 80 according to the embodiment of the present application has better quality when transmitting the first electromagnetic wave signal.
Further, the antenna module 10 is further configured to receive a second electromagnetic wave signal in a second preset frequency band, and obtain a third radio frequency signal according to the second electromagnetic wave signal. The rf front-end module 810 is further configured to process the third rf signal according to the third rf signal to obtain a fourth rf signal, and output the fourth rf signal.
In this embodiment, the rf front-end antenna integrated module 80 is further configured to receive electromagnetic wave signals. The second preset frequency band may be the same as the first preset frequency band or different from the first preset frequency band, and is not limited herein.
In this embodiment, the antenna module 10 is further configured to receive the second electromagnetic wave signal in the second preset frequency band, so that the rf front-end antenna integrated module 80 can achieve a function of receiving the electromagnetic wave signal.
Further, referring to fig. 3, the rf front-end module 810 further includes a plurality of low noise amplifiers 813 and a second switch 814. The low noise amplifier 813 is electrically connected to the antenna module 10 in a one-to-one correspondence manner, and is configured to receive the third radio frequency signal, and amplify the third radio frequency signal to obtain the fourth radio frequency signal. The second switch 814 includes a plurality of second receiving ends 8141 and second output ends 8142, the second receiving ends 8141 are electrically connected to the low noise amplifiers 813 in a one-to-one correspondence, and one of the second receiving ends 8141 may be electrically connected to the second output end 8142.
The low noise amplifier 813 is electrically connected to the antenna module 10, and different low noise amplifiers 813 are electrically connected to different antenna modules 10. The low noise amplifier 813 is configured to amplify the third radio frequency signal to obtain a fourth radio frequency signal. The rf front-end antenna integrated module 80 includes the low noise amplifier 813, and the low noise amplifier 813 processes the third rf signal to make the noise of the obtained fourth rf signal smaller, so that the processing precision of the fourth rf signal output by the rf front-end antenna integrated module 80 when passing through the transceiver 40 to the base station is higher.
In one embodiment, the plurality of antenna modules 10 includes a first antenna sub-module 100a. The first antenna sub-module 100a includes two filters 10a to form a duplexer, the two filters 10a being integrated with the magneto-electric antenna 10b, and one of the two filters 10a being electrically connected to a power amplifier 812, and the other of the two filters 10a being electrically connected to a low noise amplifier 813.
The first antenna sub-module 100a includes two filters 10a, and the diplexer (duplex) includes the two filters 10a. In this embodiment, the first antenna sub-module 100a includes two filters 10a and a magneto-electric antenna 10b, one of the two filters 10a is electrically connected to the power amplifier 812, and the filter 10a of the two filters 10a is electrically connected to the low noise amplifier 813. The magneto-electric antenna 10b in the first antenna sub-module 100a is electrically connected to two filters 10a. It can be seen that the magneto-electric antenna 10b in the first antenna sub-module 100a can be used as a transmitting antenna as well as a receiving antenna. Thus, the radio frequency front end circuit can implement both a transmit (Tx) function and a receive (Rx) function.
Specifically, when the rf front-end circuit transmits an electromagnetic wave signal, the second rf signal is transmitted by the first switch 811 to the power amplifier 812, the power amplifier 812 performs power amplification on the second rf signal, the power amplifier 812 is electrically connected to the one of the two filters 10a, the power-amplified second rf signal is converted into a first acoustic wave signal of a first preset frequency band through the one of the two filters 10a, the first acoustic wave signal is output to the magneto-electric antenna 10b, and the magneto-electric antenna 10b is configured to support the first electromagnetic wave signal of the first preset frequency band according to the first acoustic wave signal of the first preset frequency band.
When the rf front-end circuit receives an electromagnetic wave signal, the magneto-electric antenna 10b in the antenna module 10, the other of the two filters 10a, the low noise amplifier 813, and the second switch 814 constitute a reception path. The magneto-electric antenna 10b in the antenna module 10 receives a second electromagnetic wave signal in a second preset frequency band, the antenna module 10 is further configured to receive the second electromagnetic wave signal in the second preset frequency band, obtain a third radio frequency signal according to the second electromagnetic wave signal, and perform low noise processing on the third radio frequency signal to obtain a fourth radio frequency signal and output the fourth radio frequency signal.
In this embodiment, the number of the antenna modules 10 is three, and the rf front-end antenna integrated module 80 includes two first antenna sub-modules 100a, but this should not be construed as limiting the rf front-end antenna integrated module 80 provided by the embodiment of the present application, and the number of the first antenna sub-modules 100a in the rf front-end antenna integrated module 80 may be one or more (greater than or equal to 2, for example, 3, or 4, etc.).
Further, referring to fig. 3, the rf front-end antenna integrated module 80 further includes a third switch 815. The third switch 815 includes two first ends 8151 and a second end 8152. One of the two first ends 8151 is electrically connected to a power amplifier 812, the other of the two first ends 8151 is electrically connected to a low noise amplifier 813, and the second end 8152 may be electrically connected to one of the two first ends 8151. Accordingly, the plurality of antenna modules 10 includes a second antenna sub-module 100b. The second antenna sub-module 100b is electrically connected to the second end 8152, and the second antenna sub-module 100b includes a filter 10a and a magneto-electric antenna 10b integrated into a whole.
In this embodiment, taking the number of the antenna modules 10 as three, the rf front-end antenna integrated module 80 includes two first antenna sub-modules 100a, and the rf front-end antenna integrated module 80 includes one second antenna sub-module 100b for illustration.
In this embodiment, since the second antenna sub-module 100b includes the filter 10a and the magneto-electric antenna 10b that are integrated, the magneto-electric antenna 10b in the second antenna sub-module 100b is made to function as a transmitting antenna or a receiving antenna by switching the third switch 815.
When the magneto-electric antenna 10b in the second antenna sub-module 100b is used as a transmitting antenna, the one of the two first ends 8151 of the third switch 815 is electrically connected to the second end 8152, and the power amplifier 812, the third switch 815, the filter 10a and the magneto-electric antenna 10b form a transmitting path.
When the magneto-electric antenna 10b in the second antenna sub-module 100b is used as a receiving antenna, the other of the two first ends 8151 of the third switch 815 is electrically connected to the second end 8152, and the magneto-electric antenna 10b, the filter 10a, the third switch 815, and the low noise amplifier 813 form a receiving path.
In fig. 3, the rf front-end module 810 and the antenna module 10 are separate modules.
Referring to fig. 4, fig. 4 is a schematic diagram of an architecture of the rf front-end antenna integrated module provided in fig. 1 according to another embodiment. In this embodiment, the rf front-end module 810 is integrated with the antenna module 10 into one module.
When the rf front-end module 810 and the antenna module 10 are integrated into one module, the integration level of the rf front-end antenna integrated module 80 is further improved, and when the rf front-end antenna integrated module 80 is applied to the electronic device 1, the layout in the electronic device 1 is more flexible. In addition, the rf front-end module 810 and the antenna module 10 are integrated into one module, which greatly simplifies the architecture of the rf front-end antenna integrated module 80 and further reduces the cost and size of the rf front-end antenna integrated module 80.
In summary, according to the rf front-end antenna integrated module 80 provided in an embodiment of the present application, based on the antenna module 10 including the filtering magnetoelectric antenna 10b, the size and cost of the rf front-end antenna integrated module 80 can be reduced, and the partial integration or even the complete integration of the rf front-end antenna integrated module 80 can be realized.
The filter 10a and the magneto-electric antenna 10b in the antenna module 10 are integrated at a device level, and the rf front-end antenna integrated module 80 includes the antenna module 10, so that a frequency-selective switch (also referred to as a frequency-selective switch) in the rf front-end antenna integrated module 80 can be omitted, and therefore, a separate filter device is not required and a frequency-selective switch is not required, and therefore, the number of devices of the rf front-end antenna integrated module 80 is greatly reduced. Meanwhile, the antenna module 10 can be integrated into the radio frequency front end antenna integrated module 80, so that the architecture of the radio frequency front end antenna integrated module 80 is greatly simplified, and the size and cost of the radio frequency front end antenna integrated module 80 can be reduced.
The following describes the antenna module 10 provided in various embodiments of the present application. The following mainly has two main embodiments, named first and second embodiments, respectively. Note that, the designations and numbers of the same components in the antenna module 10 provided in the first embodiment are the same, and the designations and numbers of the same components in the antenna module 10 provided in the second embodiment are the same, so that the same reference numerals of the same components in the antenna module 10 provided in the first embodiment as those in the antenna module 10 provided in the second embodiment may be different, or the same reference numerals of the same components in the antenna module 10 provided in the first embodiment as those in the antenna module 10 provided in the second embodiment may be different. The components of the antenna module 10 provided in the first embodiment and the components of the antenna module 10 provided in the second embodiment need only be referred to the description in the corresponding embodiments, and the components in the different embodiments need not be referred to.
Next, the structure of the antenna module provided in the first embodiment will be described.
Referring to fig. 5, fig. 5 is a schematic structural diagram of an antenna module according to an embodiment of the application. The antenna module 10 includes an integrated filter 10a and a magneto-electric antenna (Magnetoelectric Antenna, MEA) 10b. The antenna module 10 includes a substrate 110, a first conductive layer 120, a piezoelectric layer 140, a second conductive layer 150, and a magnetostrictive layer 160. The substrate 110 has a carrying surface 110a and has a first region 111 and a second region 112 connected to each other. The first conductive layer 120 is carried on one side of the carrying surface 110a of the substrate 110. The piezoelectric layer 140 is disposed on a side of the first conductive layer 120 facing away from the substrate 110. The second conductive layer 150 is disposed on a side of the piezoelectric layer 140 away from the substrate 110 and corresponds to the first region 111. The magnetostrictive layer 160 is disposed on a side of the piezoelectric layer 140 away from the substrate 110, connected to the second conductive layer 150, and disposed corresponding to the second region 112. The filter 10a comprises a filter located in the first region 111: a portion of the substrate 110, a portion of the first conductive layer 120, a portion of the piezoelectric layer 140, and a second conductive layer 150. The magneto-electric antenna 10b comprises a second antenna element located in a second region 112: a portion of the substrate 110, a portion of the first conductive layer 120, a portion of the piezoelectric layer 140, and the magnetostrictive layer 160.
The filter 10a generates bulk acoustic wave oscillation according to the second radio frequency signal, so as to realize frequency selection of the second radio frequency signal of the first preset frequency band, and the magneto-electric antenna 10b is used for generating the first electromagnetic wave signal of the first preset frequency band according to the second radio frequency signal of the first preset frequency band.
Specifically, the first conductive layer 120 and the second conductive layer 150 of the filter 10a are configured to receive a second radio frequency signal. Generally, the process of selecting the second rf signal with the frequency band being the first preset frequency band from the received second rf signals by the filter 10a is described in detail below. The frequency band of the second radio frequency signal received by the filter 10a is wider, and the frequency band of the second radio frequency signal received by the filter 10a is named as the first original frequency band. The filter 10a generates an acoustic wave oscillation through the second radio frequency signal, the acoustic wave oscillation corresponds to a characteristic frequency and a first preset frequency band including the characteristic frequency, so as to realize frequency selection of the second radio frequency signal of the first preset frequency band, wherein the first preset frequency band is located in the first original frequency band, and the bandwidth of the first preset frequency band is smaller than that of the first original frequency band.
The magneto-electric antenna 10b in the antenna module 10 provided in this embodiment may also be referred to as a solid state assembled (Solid Mounted Resonator, SMR) filter magneto-electric antenna.
It will be appreciated that, in the schematic diagrams in this embodiment and the schematic diagrams in the following embodiments, for convenience in viewing each film layer in the antenna module 10, the schematic diagrams are illustrated by taking the interval between each film layer in the antenna module 10 as an example, and in fact, each adjacent film layer in the antenna module 10 is attached to each other.
In the present embodiment, the filter 10a and the magneto-electric antenna 10b are integrated with the substrate 110. Therefore, the filter 10a and the magneto-electric antenna 10b are structurally integrated. The filter 10a and the magneto-electric antenna 10b are advantageously designed integrally in terms of design and manufacturing process.
The substrate 110 may be, but is not limited to being, a silicon (Si) substrate 110. The thickness of the substrate 110 may be, but is not limited to, 20 μm to 800 μm.
The first conductive layer 120 is also referred to as a bottom electrode layer. The first conductive layer 120 includes a combination of one or more of Mo, al, W, pt, ta thin films, and the thickness of the first conductive layer 120 is 50nm to 1500nm. In one embodiment, the first conductive layer 120 may be directly disposed on the carrying surface 110 a.
In other embodiments, the first conductive layer 120 is indirectly disposed on the carrying surface 110a, for example, the first conductive layer 120 may be disposed on the carrying surface 110a through a buffer layer 130. The buffer layer 130 may be, but is not limited to, a seed layer. The antenna module 10 further includes a buffer layer 130, which will be described in detail later with reference to the drawings.
The piezoelectric layer 140 includes one or more combinations of AlN, znO, PZT, liNbO, liTaO3 thin films. The thickness of the piezoelectric layer 140 is 500nm to 3000nm (i.e., 3 μm). In the embodiment of the present application, the ranges a to b are all inclusive of the end values a and b, and the values greater than a and less than b.
For example, the thickness of the piezoelectric layer 140 may be, but is not limited to, 500nm, or 600nm, or 700nm, or 800nm, or 900nm, or 1000nm (i.e., 1 μm), or 1100nm,1200nm, 1300nm, or 1400nm, or 1500nm, or 1600nm, or 1700nm, or 1800nm, or 1900nm, or 2000nm (i.e., 2 μm), or 2100nm, or 2200nm, or 2300nm, or 2400nm, or 2500nm, or 2600nm, or 2700nm, or 2800nm, or 2900nm, or 3000nm (i.e., 3 μm).
The thickness of the piezoelectric layer 140 is related to the frequency band of the electromagnetic wave signal supported by the antenna module 10. When the thickness of the piezoelectric layer 140 is 500nm to 3000nm, the antenna module 10 can be adapted to different frequency bands, such as a low frequency band, an intermediate frequency band, a high frequency band, or an ultra-high frequency band.
The second conductive layer 150 is disposed corresponding to the first region 111, specifically, an orthographic projection of the second conductive layer 150 on the substrate 110 is located in the first region 111.
The magnetostrictive layer 160 is disposed corresponding to the second region 112, specifically, an orthographic projection of the magnetostrictive layer 160 on the substrate 110 is located at the second region 112.
The magnetostrictive layer 160 will be described in detail later. The working principle of the antenna module 10 is described as follows.
In the antenna module 10, the first conductive layer 120 and the input portion 151 are configured to receive a Radio Frequency (RF) signal, the second RF signal excites the piezoelectric layer 140 to generate and pass through acoustic vibration of a first preset frequency band, and the acoustic vibration of the first preset frequency band drives the magnetic moment of the magnetostrictive layer 160 to generate radiation, so as to generate a first electromagnetic wave signal of the first preset frequency band, thereby realizing an antenna function.
The core of the magneto-electric antenna 10b is a magneto-electric (ME) heterojunction composed of a piezoelectric layer 140 and a magnetostrictive layer 160. The magnetostrictive layer 160 not only acts as the upper electrode of the magneto-electric antenna 10b (here, the thin film bulk acoustic resonator (Film Bulk Acoustic Wave Resonator, FBAR) magneto-electric antenna 10 b) but also acts as the body of strain-induced electromagnetic radiation. Acoustic resonator the magneto-electric antenna 10b uses bulk acoustic wave resonance in the piezoelectric layer 140 as a source for generating a high frequency mechanical stress strain field, and the inverse piezoelectric effect in the piezoelectric layer 140 causes particle vibration under excitation of the second radio frequency signal to generate bulk acoustic waves. The high frequency strain field in the piezoelectric layer 140 is transferred to the previous magnetostrictive layer 160 by interlayer coupling. The stress may change the magnetic domain structure of the ferromagnetic substance as the external magnetic field due to the verari effect (Villari). Dynamic mechanical stress drives the domain wall displacement and domain moment rotation in magnetostrictive layer 160, a process in which the domains are dynamically magnetized. When the magnetic domain is dynamically magnetized under the high-frequency strain drive, the equivalent magnetic dipole will radiate an alternating electromagnetic field outwards. All magnetic domains in the magnetostrictive layer 160 generate superposition of radiated electromagnetic field strength under different strain driving, so that the transmission process of the Film Bulk Acoustic Resonator (FBAR) magneto-electric antenna 10b (MEA) is completed, and the reverse process of receiving electromagnetic wave signals is performed. The driving source of the whole magneto-electric antenna 10b is a stress field of a piezoelectric effect, the coupling process is an interlayer strain-mediated coupling effect, and the radiation source is magnetic moment equivalent magnetic dipole radiation.
Unlike conventional current antennas, the magnetoelectric antenna 10b drives the magnetic moment of the magnetostrictive layer 160 to generate electromagnetic radiation by means of mechanical stress caused by acoustic resonance in the piezoelectric layer 140, so that the characteristic size of the magnetoelectric antenna 10b is comparable to the acoustic wavelength. Since the acoustic wave wavelength is small compared to a conventional current antenna at the same frequency, there is a difference of four to five orders of magnitude. Therefore, the magneto-electric antenna 10b in the antenna module 10 has an advantage of significant miniaturization compared to the conventional current antenna. When the magneto-electric antenna 10b in the antenna module 10 is the same as the conventional current antenna in size, a significant radiation gain advantage can be exerted. In addition, the principle of acoustic resonance driving and magnetic dipole radiation in the induced magnetostriction layer 160 in the magnetoelectric antenna 10b can also provide the magnetoelectric antenna 10b with the advantages of no need of an external matching network and no attenuation radiation by ground plane image current.
The characteristic size of the magnetoelectric antenna can be less than two orders of magnitude of the most advanced electrically small antenna due to the principle of acoustic wave excitation, and the magnetoelectric antenna has obvious radiation performance advantages. Due to the principle of mechanical resonance, an external matching network is not required, and the complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) process can be compatible.
As described above, in the present embodiment, the filter 10a includes the substrate 110 portion located in the first region 111, the first conductive layer 120 portion located in the first region 111, the piezoelectric layer 140 portion located in the first region 111, and the first conductive layer 120 located in the first region 111; the magneto-electric antenna 10b comprises a substrate 110 part located in a second area 112, a second conductive layer 150 part located in the second area 112, a piezoelectric layer 140 part located in the second area 112, and a magnetostrictive layer 160 located in the second area 112; therefore, in the antenna module 10 according to the embodiment of the present application, the filter 10a and the piezoelectric antenna are integrated on the same substrate 110, the filter device and the piezoelectric antenna share the first conductive layer 120 and the piezoelectric layer 140, and no connection piece is required to electrically connect the filter device and the piezoelectric antenna, so that the size of the antenna module 10 according to the embodiment of the present application is smaller. In addition, since the filter 10a and the piezoelectric antenna are integrated on the same substrate 110, the problems of increased size, higher loss, higher cost, and the like caused by electrically connecting the separate filter device and the piezoelectric antenna by using the connecting piece can be further reduced or even avoided. Further, since the filter 10a is integrated with the piezoelectric antenna on the same substrate 110, mass production is facilitated. In addition, the filter 10a generates bulk acoustic wave oscillation according to the second radio frequency signal, so as to realize frequency selection of the second radio frequency signal of the first preset frequency band and filter clutter; the magneto-electric antenna 10b generates the first electromagnetic wave of the first preset frequency band according to the second radio frequency signal of the first preset frequency band, so as to realize the function of the antenna, realize the radiation gain of a high passband, and improve the port impedance matching.
Referring to fig. 5 and 6, fig. 6 is a detailed identification schematic diagram of the antenna module shown in fig. 5. The second conductive layer 150 includes an input portion 151, a first resonant portion 152a, and a second resonant portion 152b. The first conductive layer 120 and the input portion 151 are configured to receive the second radio frequency signal. The first resonant portion 152a is connected to the input portion 151. The second resonant portion 152b is connected to the first resonant portion 152a. The first region 111 of the substrate 110 includes a first sub-region (i.e., a front projection region of the first resonant portion 152a on the substrate 110 in the drawing) and a second sub-region (i.e., a front projection region of the second resonant portion 152b on the substrate 110 in the drawing). The antenna module 10 includes a first resonator 152 and a second resonator 153. The first resonator 152 comprises a first resonator located in the first sub-region: the substrate portion 110, the first conductive layer 120 portion, the piezoelectric layer 140 portion, and the first resonator 152a. The second resonator 153 comprises a second resonator located in the second sub-region: the substrate portion 110, the first conductive layer 120 portion, the piezoelectric layer 140 portion, and the second resonator portion 152b. The first resonator 152 has a first resonant frequency f 1, the second resonator 153 has a second resonant frequency f 2, wherein the second resonant frequency f 2 is smaller than the first resonant frequency f 1, and the frequency f of the first preset frequency band satisfies: f 2≤f≤f1.
In this embodiment, the first resonant frequency f 1 of the first resonator 152 determines the upper frequency limit of the second radio frequency signal corresponding to the sound wave passing through the filter 10a, the second resonant frequency f 2 of the second resonator 153 determines the lower frequency limit of the second radio frequency signal corresponding to the sound wave passing through the filter 10a, and the first resonator 152 and the second resonator 153 cooperate together to realize that the frequency f of the first preset frequency band of the radio frequency signal corresponding to the sound wave passing through the filter 10a satisfies: f 2≤f≤f1. In this embodiment, the filter 10a utilizes the first resonator 152 and the second resonator 153 to realize that the second radio frequency signal corresponding to the sound wave in the preset frequency band passes through, and filters clutter with a frequency greater than the first resonant frequency, and filters clutter with a frequency greater than the second resonant frequency, so that the antenna module 10 generates the first electromagnetic wave signal according to the second radio frequency signal corresponding to the sound wave in the first preset frequency band (i.e., the second radio frequency signal in the first preset frequency band), so that the antenna module 10 has a better communication effect when generating the first electromagnetic wave signal.
Further, in an embodiment, the first resonator 152 comprises one or more series resonators; the second resonator 153 includes one or more parallel resonators.
In the present embodiment, the first resonator 152 is illustrated as including four series resonators, and the second resonator 153 is illustrated as including four parallel resonators. It will be appreciated that in other embodiments, the number of first resonators 152 may be other, such as one, or two, or three, or five, etc. The number of the second resonators 153 may be other numbers, for example, one, or two, or three, or five, etc. The plurality of numbers is equal to or greater than 2. In the schematic diagram of the present embodiment, the first resonator 152 includes four series resonators, each of which includes one first resonant portion 152a, and thus, in the present embodiment, the first resonator 152 has four first resonant portions, which are respectively denoted by S1, S2, S3, and S4. The second resonator 153 includes four parallel resonators, each including one second resonant portion 152b, and thus, in this embodiment, the second resonator 153 has four second resonant portions 152b, which are respectively denoted by P1, P2, P3, and P4.
The first resonator 152 includes one or more series resonators; the second resonator 153 includes one or more parallel resonators, and can better pass through the sound wave of the preset frequency band, so as to filter out clutter with a frequency greater than the first resonant frequency, and filter out clutter with a frequency greater than the second resonant frequency, so that the antenna module 10 supports electromagnetic wave signals according to the sound wave of the preset frequency band, and the antenna module 10 has better communication effect when supporting the electromagnetic wave signals.
The resonance frequency of the first resonator 152 is different from the resonance frequency of the second resonator 153. The first resonator 152 and the second resonator 153 may be excited by a Bulk Acoustic Wave (BAW) generated by the piezoelectric layer 140. The series resonator has a sandwich structure formed by the second conductive layer 150 (also referred to as an upper electrode), the piezoelectric layer 140, and the first conductive layer 120 (also referred to as a lower electrode). The first resonator 152 and the second resonator 153 are electrically connected by a conductive member.
The magneto-electric antenna 10b is also excited by bulk acoustic waves (Bulk Acoustic Wave, BAW) except that the top electrode of the magneto-electric antenna 10b is a magnetostrictive layer 160. The magnetostrictive layer 160 forms a magneto-electric heterojunction (strain coupling effect) with the piezoelectric layer 140. The magneto-electric antenna 10b may have one or more resonance regions, and each resonance region has a resonance frequency. Thus, the magneto-electric antenna 10b has one or more resonant frequencies and is capable of producing a corresponding radiation peak.
Referring to fig. 5, 6 and 7, fig. 7 is a schematic cross-sectional view of an antenna module according to an embodiment. In fig. 7, the adjacent film layers in the antenna module 10 are attached to each other. FIG. 7 (a) is a schematic cross-sectional view taken along line I-I in FIG. 5; fig. 7 (b) is a schematic cross-sectional view of an antenna module 10 according to another embodiment.
The antenna module 10 also has an acoustic wave reflecting structure 170. The acoustic wave reflecting structure 170 serves to confine a longitudinal acoustic wave generated by piezoelectric resonance of the magneto-electric antenna 10b within a resonance region of the magneto-electric antenna 10 b.
The antenna module 10 further comprises an acoustic wave reflecting structure 170, wherein the acoustic wave reflecting structure 170 is configured to limit a longitudinal acoustic wave generated by piezoelectric resonance of the magnetoelectric antenna 10b within a resonance region of the magnetoelectric antenna 10b, so as to reduce or even prevent energy of the acoustic wave from leaking into the substrate 110, so as to improve a mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter 10a, and meanwhile, the magneto-electric antenna 10b can obtain larger radiation capability, so that better communication effect is achieved when the antenna module 10 is used for communication.
With continued reference to fig. 5 and fig. 7, in this embodiment, the substrate 110 further has a back surface 110b facing away from the carrying surface 110a, the substrate 110 further has a cavity 110c, and an opening of the cavity 110c is located on the carrying surface 110a, where the acoustic wave reflecting structure 170 includes the cavity 110c. In the embodiment shown in fig. 7, the cavity 110c is located on the bearing surface 110a and does not penetrate the back surface 110b. In other words, in the embodiment shown in fig. 7, the cavity 110c is a groove with an opening on the bearing surface 110 a. Referring to fig. 8, fig. 8 is a schematic cross-sectional view taken along line I-I in fig. 5 according to another embodiment. The antenna module 10 in this embodiment is substantially the same as the antenna module 10 shown in fig. 7 (b), except that in this embodiment, the opening of the cavity 110c is located on the carrying surface 110a and the back surface 110b, and the acoustic wave reflecting structure 170 includes the cavity 110c. In other words, the cavity 110c penetrates the bearing surface 110a and the back surface 110b.
In this embodiment, the acoustic wave reflecting structure 170 includes the cavity 110c, and the interface of the substrate 110 defining the cavity 110c may act as an acoustic wave reflecting interface of a bulk acoustic wave reflector (BAW) resonator (i.e., the filter 10 a), and the reflectivity of the acoustic wave reflecting interface may be, but is not limited to, 95% or even total reflection. For example, the acoustic resonator magneto-electric antenna 10b uses bulk acoustic wave resonance in the piezoelectric layer 140 as a source for generating a high-frequency mechanical stress strain field, and the inverse piezoelectric effect in the piezoelectric layer 140 causes particle vibration under the excitation of the second radio frequency signal to generate bulk acoustic waves, and the acoustic waves are totally reflected at the upper air interface and the lower air interface of the cavity 110c to form resonance.
The acoustic wave reflecting structure 170 includes a cavity 110c, and the cavity 110c limits a longitudinal acoustic wave generated by piezoelectric resonance of the magneto-electric antenna 10b within a resonance region of the magneto-electric antenna 10b to reduce or even prevent energy of the acoustic wave from leaking into the substrate 110, so as to raise a mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter 10a, and meanwhile, the magneto-electric antenna 10b can obtain larger radiation capability, so that better communication effect is achieved when the antenna module 10 is used for communication.
Referring to fig. 6, fig. 7 (a) and fig. 9, fig. 9 is a schematic cross-sectional view of an antenna module according to another embodiment. In the embodiment shown in fig. 9, the piezoelectric layer 140 further has a piezoelectric through-hole 141, compared to (a) in fig. 7. The piezoelectric via 141 communicates with the cavity 110c, and the second conductive layer 150 includes a ground 154. The antenna module 10 further includes a grounding member 180, where the grounding member 180 is disposed in the piezoelectric through hole 141 and is used for electrically connecting the first conductive layer 120 and the grounding portion 154 of the second conductive layer 150. Referring to fig. 6 and 7, or referring to fig. 6 and 8, the first conductive layer 120 is not electrically connected to the grounding portion 154.
When the first conductive layer 120 is not electrically connected to the ground portion 154, the first conductive layer 120 is at a floating potential (also referred to as a free potential), which may result in a higher antenna gain and antenna efficiency. When the antenna module 10 is used for communication, the communication effect is good.
Referring to fig. 7 (b), the second conductive layer 150 and the magnetostrictive layer 160 have a gap 160a therebetween, and the antenna module 10 further includes a waveguide 190. The waveguide 190 is disposed within the gap 160a and electrically connects the second conductive layer 150 and the magnetostrictive layer 160.
The waveguide 190 may be, but is not limited to, a thin metal film. The waveguide 190 is disposed within the gap 160a and electrically connects the second conductive layer 150 and the magnetostrictive layer 160, such that the waveguide 190 is coplanar with the second conductive layer 150 and the magnetostrictive layer 160, the waveguide 190 also being referred to as a coplanar waveguide 190. The waveguide 190 is disposed in the gap 160a and electrically connects the second conductive layer 150 and the magnetostrictive layer 160, so that the signal output by the filter 10a can be transmitted to the magneto-electric antenna 10b without damage or even with small loss, thereby ensuring high-quality transmission of the signal between the filter 10a and the magneto-electric antenna 10b under high power.
In other embodiments, the waveguide 190 may cover the second conductive layer 150 and the magnetostrictive layer 160 to electrically connect the second conductive layer 150 and the magnetostrictive layer 160. Compared to the waveguide 190 disposed in the gap 160a and electrically connecting the second conductive layer 150 and the magnetostrictive layer 160, when the waveguide 190 covers the second conductive layer 150 and the magnetostrictive layer 160, the signal transmission between the filter 10a and the magneto-electric antenna 10b has a certain signal loss, however, when the waveguide 190 covers the second conductive layer 150 and the magnetostrictive layer 160, the electrical contact between the second conductive layer 150 and the magnetostrictive layer 160 is better, and good electrical contact is realized.
Referring to fig. 10 and 11, fig. 10 is a schematic side view of an antenna module according to an embodiment of the application; fig. 11 is a schematic side view of an antenna module according to another embodiment of the application. In fig. 10, the first conductive layer 120 is disposed directly on the carrying surface 110 a. In fig. 11, the first conductive layer 120 is indirectly disposed on the carrying surface 110a, for example, the first conductive layer 120 may be disposed on the carrying surface 110a through a buffer layer 130. The buffer layer 130 may be, but is not limited to, a seed layer. In other words, the antenna module 10 further includes a buffer layer 130, and the buffer layer 130 is disposed between the substrate 110 and the first conductive layer 120.
The antenna module 10 further includes a buffer layer 130 that may be incorporated into the antenna module 10 provided in any of the previous embodiments, and the antenna module 10 illustrated in the schematic diagram of the present embodiment should not be construed as limiting the antenna module 10 provided in the present embodiment.
In this embodiment, the buffer layer 130 may be disposed on the carrying surface 110a of the substrate 110, and the first conductive layer 120 is disposed on a surface of the buffer layer 130 facing away from the carrying surface 110 a. The antenna module 10 further includes the buffer layer 130, where the buffer layer 130 is disposed between the substrate 110 and the first conductive layer 120, so that the quality of the first conductive layer 120 is higher, and the Q value of the antenna module 10 is improved, so that the antenna module 10 has better antenna performance.
Referring to fig. 12, fig. 12 is a schematic cross-sectional view of a magnetostrictive layer in an antenna module according to an embodiment. The structure of the magnetostrictive layer 160 provided by the embodiments of the present application may be incorporated into the antenna module 10 provided by any of the previous embodiments. In one embodiment, the magnetostrictive layer 160 is made of a composite magnetic material. The magnetostrictive layer 160 includes a plurality of magnetostrictive sublayers 161 stacked in a predetermined direction. The magnetostrictive sub-layer 161 includes a magnetostrictive material layer 1611 and a dielectric material layer 1612 stacked along the preset direction, where the preset direction is a direction in which the substrate 110 points to the first conductive layer 120.
In the same magnetostrictive sub-layer 161: the layer of magnetostrictive material 1611 is closer to the substrate 110 than the layer of dielectric material 1612, and the layer of dielectric material 1612 is away from the substrate 110 than the layer of magnetostrictive material 1611.
The number of the multi-layer magnetostrictive sublayers 161 may be, but is not limited to, 10 layers or the like. In the schematic diagram of the present embodiment, the number of magnetostrictive sublayers 161 is exemplified by 10, and it should be understood that the magnetostrictive layers 160 provided in the embodiment of the present application should not be construed as limited.
The magnetostrictive sub-layer 161 includes a magnetostrictive material layer 1611 and a dielectric material layer 1612 stacked along the predetermined direction, and the dielectric material layer 1612 can reduce the magnetic domain size of the magneto-electric antenna 10b, and reduce eddy current loss, so that the antenna module 10 has better antenna performance.
Further, in an embodiment, the magnetostrictive material layer 1611 comprises FeGaB and the dielectric material layer 1612 comprises Al 2O3.
When the number of the multi-layer magnetostrictive sub-layers 161 is 10 and the magnetostrictive material layer 1611 includes FeGaB and the dielectric material layer 1612 includes Al 2O3, the magnetostrictive layer 160 is (FeGaB/Al 2O3)×10 composite magnetostrictive film.
The magnetostrictive material layer 1611 comprises FeGaB, i.e., B-doped FeGa. The B doping can improve the soft magnetic performance of the magnetostrictive material layer 1611, and the dielectric material layer 1612 includes Al 2O3 to reduce the magnetic domain size of the magnetoelectric antenna 10B, thereby reducing eddy current loss, and enabling the antenna module 10 to have better antenna performance.
Referring to fig. 13, fig. 13 is a schematic structural diagram of an antenna module according to another embodiment of the application. In this embodiment, the acoustic wave reflecting structure 170 is disposed between the substrate 110 and the first conductive layer 120.
The antenna module 10 further includes an acoustic wave reflecting structure 170, where the acoustic wave reflecting structure 170 is disposed between the substrate 110 and the first conductive layer 120, and the acoustic wave reflecting structure 170 is configured to limit a longitudinal acoustic wave generated by piezoelectric resonance of the magnetoelectric antenna 10b within a resonance region of the magnetoelectric antenna 10b, so as to reduce or even prevent energy of the acoustic wave from leaking into the substrate 110, so as to improve a mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter 10a, and meanwhile, the magneto-electric antenna 10b can obtain larger radiation capability, so that better communication effect is achieved when the antenna module 10 is used for communication.
With continued reference to fig. 13, the acoustic wave reflecting structure 170 includes a plurality of sub-reflecting layers 171 stacked along a predetermined direction. The sub-reflection layer 171 includes a first acoustic impedance layer 1711 and a second acoustic impedance layer 1712 stacked along a predetermined direction, where the acoustic impedance of the first acoustic impedance layer 1711 is greater than the acoustic impedance of the second acoustic impedance layer 1712, and the predetermined direction is a direction in which the substrate 110 points to the first conductive layer 120.
In the schematic diagram of the present embodiment, the acoustic wave reflecting structure 170 is illustrated by taking the example that the acoustic wave reflecting structure includes 3 sub-reflecting layers 171 stacked along the preset direction as an example, and in other embodiments, the number of the sub-reflecting layers 171 may be other numbers, for example, 2 layers, 4 layers, 5 layers, or the like. The multiple layers of the multiple sub-reflection layer 171 are greater than or equal to 2 layers.
For the sub-reflection layer 171 located at the same layer: the first acoustic impedance layer 1711 is adjacent to the substrate 110 compared to the second acoustic impedance layer 1712, the second acoustic impedance layer 1712 facing away from the substrate 110 compared to the first acoustic impedance layer 1711.
The acoustic wave reflecting structure 170 includes a plurality of sub-reflecting layers 171 stacked in a predetermined direction. The sub-reflection layer 171 includes a first acoustic impedance layer 1711 and a second acoustic impedance layer 1712 stacked in a predetermined direction, and the acoustic impedance of the first acoustic impedance layer 1711 is greater than that of the second acoustic impedance layer 1712, so that the reflection structure is a bragg reflection structure, which is also called a bragg reflection layer.
The antenna module 10 further includes an acoustic wave reflecting structure 170, and the acoustic wave reflecting structure 170 includes a plurality of sub-reflecting layers 171 stacked along a predetermined direction. The sub-reflection layer 171 includes a first acoustic impedance layer 1711 and a second acoustic impedance layer 1712 stacked along a preset direction, and the acoustic impedance of the first acoustic impedance layer 1711 is greater than that of the second acoustic impedance layer 1712, so that the acoustic wave reflection structure 170 can limit the longitudinal acoustic wave generated by the piezoelectric resonance of the magneto-electric antenna 10b within the resonance area of the magneto-electric antenna 10b, so as to reduce or even prevent the energy of the acoustic wave from leaking into the substrate 110, so as to improve the mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter 10a, and meanwhile, the magneto-electric antenna 10b can obtain larger radiation capability, so that better communication effect is achieved when the antenna module 10 is used for communication.
Next, the structure of the antenna module provided in the second embodiment will be described.
Referring to fig. 14, 15 and 16, fig. 14 is a schematic structural diagram of an antenna module according to an embodiment of the application; fig. 15 is a schematic diagram of a portion of the components of the antenna module shown in fig. 14; fig. 16 is a schematic diagram of identification of additional parts of the antenna module shown in fig. 14. The antenna module 10 includes a substrate 110, a first conductive layer 120, a piezoelectric layer 140, a second conductive layer 150, and a magnetostrictive layer 160. The substrate 110 has a first region 111 and a second region 112. The first conductive layer 120 is disposed on one side of the substrate 110. The piezoelectric layer 140 is disposed on a side of the first conductive layer 120 facing away from the substrate 110. The second conductive layer 150 is disposed on a side of the piezoelectric layer 140 facing away from the substrate 110. The magnetostrictive layer 160 is disposed on a side of the piezoelectric layer 140 facing away from the substrate 110. In the schematic diagram of this embodiment, the second conductive layer 150 is disposed on a surface of the piezoelectric layer 140 facing away from the substrate 110, and the magnetostrictive layer 160 is disposed on a surface of the second conductive layer 150 facing away from the substrate 110 (as shown in the drawing) compared to the magnetostrictive layer 160 adjacent to the piezoelectric layer 140. The magnetostrictive layer 160 includes a first magnetostrictive portion 160a and a second magnetostrictive portion 160b. The first magnetostrictive portion 160a is disposed corresponding to the first region 111, and the first magnetostrictive portion 160a is electrically connected to the input portion 151, and the second magnetostrictive portion 160b is disposed corresponding to the second region 112, and is electrically connected to the first magnetostrictive portion 160 a. It will be appreciated that in other embodiments, the magnetostrictive layer 160 is adjacent to the piezoelectric layer 140 as compared to the second conductive layer 150. Whichever of the second conductive layer 150 and the magnetostrictive layer 160 is adjacent to the piezoelectric layer 140, it is sufficient that the first magnetostrictive portion 160a and the second magnetostrictive portion 160b are electrically connected through the second conductive layer 150. The piezoelectric layer 140 generates a first acoustic wave signal in a first preset frequency band according to the second radio frequency signal, and the first magnetostrictive portion 160a and the second magnetostrictive portion 160b jointly generate a first electromagnetic wave signal in the first preset frequency band according to the first acoustic wave signal in the first preset frequency band.
It will be appreciated that, in the schematic diagrams in this embodiment and the schematic diagrams in the following embodiments, for convenience in viewing each film layer in the antenna module 10, the schematic diagrams are illustrated by taking the interval between each film layer in the antenna module 10 as an example, and in fact, each adjacent film layer in the antenna module 10 is attached to each other.
The substrate 110 may be, but is not limited to being, a silicon (Si) substrate. The thickness of the substrate 110 may be, but is not limited to, 20 μm to 800 μm.
In one embodiment, the substrate 110 has a resistivity greater than or equal to 500Ohm cm.
The substrate 110 has a resistivity of 500Ohm cm or more, which is advantageous in reducing the overall insertion loss of the antenna module 10. Therefore, the antenna module 10 can obtain larger radiation capability, and has better communication effect when the antenna module 10 is used for communication.
In an embodiment, the substrate 110 has a bearing surface 110a facing the first conductive layer 120, and the roughness of the bearing surface 110a is less than 1nm.
When the roughness of the substrate 110 is less than or equal to 1nm, the film forming effect of the film layer deposited on the substrate 110 is good, the Q value of the antenna module 10 is good, and when the antenna module 10 is used for communication, the communication effect is good.
In one embodiment, the substrate 110 has a resistivity greater than or equal to 500Ohm cm.
The substrate 110 has a resistivity of 500Ohm cm or more, which is advantageous in reducing the overall insertion loss of the antenna module 10. Therefore, the magnetoelectric antenna can obtain larger radiation capacity, and has better communication effect when the antenna module 10 is used for communication.
The first conductive layer 120 is also referred to as a bottom electrode layer. The first conductive layer 120 includes a combination of one or more of Mo, al, W, pt, ta thin films, and the thickness of the first conductive layer 120 is 50nm to 1500nm. In an embodiment, the first conductive layer 120 may be disposed directly on the substrate 110.
In other embodiments, the first conductive layer 120 is indirectly disposed on the substrate 110, for example, the first conductive layer 120 may be disposed on the substrate 110 through a buffer layer 130. The buffer layer 130 may be, but is not limited to, a seed layer. The antenna module 10 further includes a buffer layer 130, which will be described in detail later with reference to the drawings.
In an embodiment, the first conductive layer 120 may not be loaded with a signal, i.e., the first conductive layer 120 is at a floating potential (also referred to as a free potential). The first conductive layer 120 may also be grounded, for example, when the second conductive layer 150 includes a ground 152, the first conductive layer 120 is electrically connected to the ground 152.
When the first conductive layer 120 is at a floating potential (also referred to as a free potential), higher antenna gain and antenna efficiency may be achieved. When the antenna module 10 is used for communication, the communication effect is good.
The piezoelectric layer 140 includes one or more combinations of AlN, znO, PZT, liNbO, liTaO3 thin films. The thickness of the piezoelectric layer 140 is 500nm to 3000nm (i.e., 3 μm). In the embodiment of the present application, the ranges a to b are all inclusive of the end values a and b, and the values greater than a and less than b.
For example, the thickness of the piezoelectric layer 140 may be, but is not limited to, 500nm, or 600nm, or 700nm, or 800nm, or 900nm, or 1000nm (i.e., 1 μm), or 1100nm,1200nm, 1300nm, or 1400nm, or 1500nm, or 1600nm, or 1700nm, or 1800nm, or 1900nm, or 2000nm (i.e., 2 μm), or 2100nm, or 2200nm, or 2300nm, or 2400nm, or 2500nm, or 2600nm, or 2700nm, or 2800nm, or 2900nm, or 3000nm (i.e., 3 μm).
The thickness of the piezoelectric layer 140 is related to the frequency band of the electromagnetic wave signal supported by the antenna module 10. When the thickness of the piezoelectric layer 140 is 500nm to 3000nm, the antenna module 10 can be adapted to different frequency bands, such as a low frequency band, an intermediate frequency band, a high frequency band, or an ultra-high frequency band.
The second conductive layer 150 includes a Ti layer and an Au layer, wherein the Ti layer is adjacent to the substrate 110 compared to the Au layer. The Ti layer is used for increasing the adhesive force of the Au layer.
Further, in the present embodiment, the second conductive layer 150 has an input portion 151 and a ground portion 152, and in the figure, the input portion 151 is denoted by S, and the ground portion 152 is denoted by G. In this embodiment, the second conductive layer 150 includes two grounding portions 152. The input portion 151 and the two ground portions 152 in the second conductive layer 150 are also referred to as coplanar waveguides. The input unit 151 and the grounding unit 152 are configured to receive an input second rf signal.
In this embodiment, the magnetostrictive layer 160 is disposed on a side of the second conductive layer 150 facing away from the substrate 110, and the magnetostrictive layer 160 includes a first magnetostrictive portion 160a and a second magnetostrictive portion 160b. The first magnetostrictive portion 160a is disposed corresponding to the first region 111, and the first magnetostrictive portion 160a is electrically connected to the input portion 151. The second conductive layer 150 is used to electrically connect the first magnetostrictive portion 160a and the second magnetostrictive portion 160b. In other words, the second magnetostrictive portion 160b is electrically connected to the first magnetostrictive portion 160a through the second conductive layer 150.
In one embodiment, the magnetostrictive layer 160 itself is a conductive material, for example, the magnetostrictive layer 160 itself is a highly conductive material.
In one embodiment, the second conductive layer 150 has an input portion 151 and a grounding portion 152, the input portion 151 and the grounding portion 152 are configured to receive a second radio frequency signal,
The piezoelectric layer 140 generates a first acoustic wave signal in a first preset frequency band according to the second radio frequency signal, and the first magnetostrictive portion 160a and the second magnetostrictive portion 160b jointly generate a first electromagnetic wave signal in the first preset frequency band according to the first acoustic wave signal in the first preset frequency band.
In the following description, the working principle of the antenna module 10 is described, the input portion 151 and the grounding portion 152 receive a second rf signal, and the second rf signal may cause the first conductive layer 120 and the magnetostrictive layer 160 to generate an alternating electric field, and the alternating electric field may cause the piezoelectric layer 140 to generate a piezoelectric effect (also referred to as a mechanical stress field), so as to generate bulk acoustic wave oscillation in a preset frequency band. It can be seen that the piezoelectric layer 140 generates a first acoustic signal in a first preset frequency band according to the second rf signal and passes through the preset frequency band. It can be seen that the antenna module 10 performs the function of acoustic wave filtering. Further, the bulk acoustic wave oscillation causes electromagnetic oscillation, that is, electromagnetic wave radiation, to be generated in the first magnetostrictive portion 160a and the second magnetostrictive portion 160b in the magnetostrictive layer 160. It can be seen that the first magnetostrictive portion 160a and the second magnetostrictive portion 160b support the first electromagnetic wave signal of the first preset frequency band together according to the first acoustic wave signal of the first preset frequency band. In summary, the antenna module 10 can realize the filtering function and the magnetoelectric antenna function, i.e., the multiplexing design of the filter and the magnetoelectric antenna is realized.
In other words, the filter excites sound wave oscillation through the second radio frequency signal, so that frequency selection of the second radio frequency signal of the first preset frequency band is realized; the magneto-electric antenna generates the first preset first electromagnetic wave signal according to the second radio frequency signal of the first preset frequency band. Typically, the filter is wider from the frequency band of the received second radio frequency signal. The frequency band of the second radio frequency signal received by the filter may be named as a second original frequency band. The filter generates sound wave oscillation (also called sound wave signal) through the second radio frequency signal, and the sound wave oscillation corresponds to a characteristic frequency and a first preset frequency band including the characteristic frequency, so that frequency selection of the second radio frequency signal of the first preset frequency band is realized. The first preset frequency band is located in the second original frequency band, and the bandwidth of the first preset frequency band is smaller than that of the second original frequency band.
It should be noted that, since the acoustic wave signal of the first preset frequency band is obtained from the second radio frequency signal of the first preset frequency band in the second radio frequency signals of the second original frequency band, the first magnetostrictive portion 160a and the second magnetostrictive portion 160b jointly generate the first electromagnetic wave signal of the first preset frequency band according to the acoustic wave signal of the first preset frequency band, and may also be regarded as that the first magnetostrictive portion 160a and the second magnetostrictive portion 160b generate the first electromagnetic wave signal of the first preset frequency band according to the second radio frequency signal of the first preset frequency band.
Specifically, the core of the magnetoelectric antenna is a Magnetoelectric (ME) heterojunction composed of a piezoelectric layer 140 and a magnetostrictive layer 160. The magnetostrictive layer 160 not only acts as the upper electrode of the magnetoelectric antenna (here, the thin film bulk acoustic resonator (Film Bulk Acoustic Wave Resonator, FBAR) magnetoelectric antenna) but also acts as the body of strain-induced electromagnetic radiation. The acoustic resonator magneto-electric antenna takes bulk acoustic resonance in the piezoelectric layer 140 as a source for generating a high-frequency mechanical stress strain field, and the inverse piezoelectric effect in the piezoelectric layer 140 causes particle vibration under the excitation of the second radio frequency signal so as to generate bulk acoustic waves. The high frequency strain field in the piezoelectric layer 140 is transferred to the previous magnetostrictive layer 160 by interlayer coupling. The stress may change the magnetic domain structure of the ferromagnetic substance as the external magnetic field due to the verari effect (Villari). Dynamic mechanical stress drives the domain wall displacement and domain moment rotation in magnetostrictive layer 160, a process in which the domains are dynamically magnetized. When the magnetic domain is dynamically magnetized under the high-frequency strain drive, the equivalent magnetic dipole will radiate an alternating electromagnetic field outwards. All magnetic domains in the magnetostrictive layer 160 generate superposition of radiated electromagnetic field strength under different strain driving, so that the transmission process of a Film Bulk Acoustic Resonator (FBAR) magneto-electric antenna (MEA) is completed, and the reverse process of receiving electromagnetic wave signals is performed. The driving source of the whole magneto-electric antenna is a stress field of piezoelectric effect, the coupling process is interlayer strain-mediated coupling effect, and the radiation source is magnetic moment equivalent magnetic dipole radiation.
Unlike conventional current antennas, the magnetoelectric antenna drives the magnetic moment of the magnetostrictive layer 160 to generate electromagnetic radiation by means of mechanical stress caused by acoustic resonance in the piezoelectric layer 140, so that the characteristic size of the magnetoelectric antenna is comparable to the acoustic wavelength. Since the acoustic wave wavelength is small compared to a conventional current antenna at the same frequency, there is a difference of four to five orders of magnitude. Therefore, the antenna module 10 has an advantage of significant miniaturization compared to the conventional current antenna. When the antenna module 10 and the conventional current antenna have the same size, a significant radiation gain advantage can be exerted. In addition, the magnetic dipole radiation principle in the magnetostrictive layer 160 can be also endowed to the magnetoelectric antenna without an external matching network and without the attenuation radiation of ground plane image current.
The antenna module 10 provided by the embodiment of the application can achieve the characteristic dimension of less than two orders of magnitude of the most advanced small electric antenna due to the principle of acoustic wave excitation, and has obvious radiation performance advantages. Due to the principle of mechanical resonance, an external matching network is not required, and the complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) process can be compatible.
In summary, in the antenna module 10 according to the embodiment of the present application, the piezoelectric layer 140 in the antenna module 10 generates and passes through the first acoustic wave signal of the first preset frequency band according to the second rf signal to realize the function of the filter, and the first magnetostrictive portion 160a and the second magnetostrictive portion 160b of the magnetostrictive layer 160 jointly generate the first electromagnetic wave signal of the first preset frequency band according to the first acoustic wave signal of the first preset frequency band to realize the magnetoelectric antenna function. Therefore, the antenna module 10 provided by the embodiment of the application has the filtering function of the filter and the function of the magnetoelectric antenna, namely, the multiplexing of the filter and the magnetoelectric antenna function is realized, and compared with the independent filter and the independent magnetoelectric antenna, the antenna module 10 provided by the embodiment of the application has smaller size and lower cost.
With continued reference to fig. 14, 15 and 16, the antenna module 10 includes a first resonator 180 and a second resonator 190. The first resonator 180 includes a first resonator located in the first region 111: a portion of the substrate 110, a portion of the first conductive layer 120, a portion of the piezoelectric layer 140, a portion of the second conductive layer 150, and a first magnetostrictive portion 160a. The second resonator 190 includes a second resonator located in the second region 112: a portion of the substrate 110, a portion of the first conductive layer 120, a portion of the piezoelectric layer 140, a portion of the second conductive layer 150, and a second magnetostrictive portion 160b. The first resonator 180 has a first resonant frequency f 1, the second resonator 190 has a second resonant frequency f 2, wherein the second resonant frequency f 2 is smaller than the first resonant frequency f 1, and the frequency f of the first preset frequency band satisfies: f 2≤f≤f1.
In this embodiment, the first resonant frequency f 1 of the first resonator 180 determines the upper frequency limit of the preset frequency band in the sound wave passing through the antenna module 10, the second resonant frequency f 2 of the second resonator 190 determines the lower frequency limit of the preset frequency band in the sound wave passing through the antenna module 10, and the first resonator 180 and the second resonator 190 cooperate together to realize that the frequency f of the first preset frequency band of the sound wave passing through the antenna module 10 satisfies: f 2≤f≤f1. In this embodiment, the antenna module 10 utilizes the first resonator 180 and the second resonator 190 to realize the acoustic wave passing through the preset frequency band, so as to filter the clutter with the frequency greater than the first resonant frequency and the clutter with the frequency greater than the second resonant frequency, so that the antenna module 10 supports the electromagnetic wave signal according to the acoustic wave of the preset frequency band, and the antenna module 10 has a better communication effect when supporting the electromagnetic wave signal.
Further, in an embodiment, the first resonator 180 includes one or more series resonators; the second resonator 190 includes one or more parallel resonators.
In the present embodiment, the first resonator 180 is illustrated as including four series resonators, and the second resonator 190 is illustrated as including four parallel resonators. It will be appreciated that in other embodiments, the number of the first resonators 180 may be other, such as one, two, three, five, or the like. The number of the second resonators 190 may be other numbers, such as one, or two, or three, or five, etc. The plurality of numbers is equal to or greater than 2. In the schematic diagram of the present embodiment, the first resonator 180 includes four series resonators respectively numbered as S1, S2, S3, and S4. The second resonator 190 includes four parallel resonators labeled P1, P2, P3, and P4, respectively.
The first resonator 180 includes one or more series resonators; the second resonator 190 includes one or more parallel resonators, which can better pass through the sound wave of the preset frequency band, and filter out the clutter with the frequency greater than the first resonant frequency, and filter out the clutter with the frequency greater than the second resonant frequency, so that the antenna module 10 supports the electromagnetic wave signal according to the sound wave of the preset frequency band, and the antenna module 10 has better communication effect when supporting the electromagnetic wave signal.
The resonant frequency of the first resonator 180 is different from the resonant frequency of the second resonator 190. The first resonator 180 and the second resonator 190 may be excited by a Bulk Acoustic Wave (BAW) generated by the piezoelectric layer 140.
The first resonator 180 includes a first resonator located in the first region 111: a portion of the substrate 110, a portion of the first conductive layer 120, a portion of the piezoelectric layer 140, a portion of the second conductive layer 150, and a first magnetostrictive portion 160a. The second resonator 190 includes a second resonator located in the second region 112: a portion of the substrate 110, a portion of the first conductive layer 120, a portion of the piezoelectric layer 140, a portion of the second conductive layer 150, and a second magnetostrictive portion 160b. The first resonator 180 and the second resonator 190 are electrically connected by the second conductive layer 150.
The antenna module 10 is excited by bulk acoustic waves (Bulk Acoustic Wave, BAW) except that the top electrode of the magneto-electric antenna in the antenna module 10 is a magnetostrictive layer 160. The magnetostrictive layer 160 forms a magneto-electric heterojunction (strain coupling effect) with the piezoelectric layer 140. The magneto-electric antenna may have one or more resonant regions (one for each series resonator and one for each parallel resonator) and each resonant region has a resonant frequency. Thus, the magneto-electric antenna has one or more resonant frequencies and is capable of generating corresponding radiation peaks.
Referring to fig. 14, 17, 18 and 19, fig. 17 is a schematic cross-sectional view of the antenna module shown in fig. 14 along line I-I in an embodiment; fig. 18 is a schematic cross-sectional view of the antenna module shown in fig. 14 along line I-I in another embodiment; fig. 19 is a schematic cross-sectional view of the antenna module shown in fig. 14 along line I-I in yet another embodiment. In each cross-sectional view, the adjacent film layers in the antenna module 10 are attached to each other. As can be seen in fig. 18 and 19, the antenna module 10 further has an acoustic wave reflecting structure 170. The acoustic wave reflecting structure 170 is configured to limit the acoustic wave of the preset frequency band to a resonance region of the first resonator 180 and a resonance region of the second resonator 190 of the antenna module 10.
The antenna module 10 further comprises an acoustic wave reflecting structure 170, wherein the acoustic wave reflecting structure 170 is used for limiting longitudinal acoustic waves generated by piezoelectric resonance of the magnetoelectric antenna within a resonance region of the magnetoelectric antenna so as to reduce or even prevent energy of the acoustic waves from leaking into the substrate 110, so as to improve the mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter, and meanwhile, the magnetoelectric antenna can obtain larger radiation capacity, so that the antenna module 10 has better communication effect when being used for communication.
With continued reference to fig. 17, 18 and 19, in the present embodiment, the substrate 110 has a carrying surface 110a disposed adjacent to the first conductive layer 120 and a back surface 110b disposed opposite to the carrying surface 110a. In fig. 18, the substrate 110 further has a cavity 110c, and an opening of the cavity 110c is located on the carrying surface 110a. In fig. 19, the opening of the cavity 110c is located on the carrying surface 110a and the back surface 110b, wherein the acoustic wave reflecting structure 170 includes the cavity 110c. In this embodiment, one cavity 110c is provided corresponding to one resonator, and as described above, the resonators identified above are 8 resonators S1 to S4 and P1 to P4, and thus the number of the cavities 110c is 8.
In the embodiment shown in fig. 18, the cavity 110c is located on the bearing surface 110a and does not penetrate the back surface 110b. In other words, in the embodiment shown in fig. 18, the cavity 110c is a groove with an opening on the bearing surface 110 a. The antenna module 10 shown in fig. 19 is substantially the same as the antenna module 10 shown in fig. 18, except that in the present embodiment, the opening of the cavity 110c is located on the carrying surface 110a and the back surface 110b, and the acoustic wave reflecting structure 170 includes the cavity 110c. In other words, the cavity 110c penetrates the bearing surface 110a and the back surface 110b.
In this embodiment, the acoustic wave reflecting structure 170 includes the cavity 110c, and the interface of the substrate 110 defining the cavity 110c may be an acoustic wave reflecting interface, and the reflectivity of the acoustic wave reflecting interface may be, but is not limited to, 95% or even total reflection. For example, the antenna module 10 uses bulk acoustic wave resonance in the piezoelectric layer 140 as a source for generating a high-frequency mechanical stress strain field, and the inverse piezoelectric effect in the piezoelectric layer 140 causes particle vibration under the excitation of the second radio frequency signal, so that bulk acoustic waves are generated, and the acoustic waves are totally reflected at the upper air interface and the lower air interface of the cavity 110c to form resonance.
The antenna module 10 further comprises a cavity 110c, wherein the cavity 110c limits a longitudinal acoustic wave generated by piezoelectric resonance of the magnetoelectric antenna within a resonance region of the magnetoelectric antenna, so as to reduce or even prevent energy of the acoustic wave from leaking into the substrate 110, so as to improve a mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter in the antenna module 10, and meanwhile, the magneto-electric antenna in the antenna module 10 can obtain larger radiation capability, so that the antenna module 10 has better communication effect when being used for communication.
Referring to fig. 20, 21 and 22, fig. 20 is a schematic structural diagram of an antenna module according to another embodiment of the present application; fig. 21 is a schematic diagram of a portion of the components of the antenna module shown in fig. 20; fig. 22 is a schematic diagram of identification of additional parts of the antenna module shown in fig. 20. The acoustic wave reflecting structure 170 is disposed between the substrate 110 and the first conductive layer 120.
In this embodiment, the acoustic wave reflecting structure 170 is disposed between the substrate 110 and the first conductive layer 120.
The antenna module 10 further includes an acoustic wave reflecting structure 170, where the acoustic wave reflecting structure 170 is disposed between the substrate 110 and the first conductive layer 120, and the acoustic wave reflecting structure 170 is configured to limit a longitudinal acoustic wave generated by piezoelectric resonance of the magnetoelectric antenna to a resonance region of the magnetoelectric antenna, so as to reduce or even prevent energy of the acoustic wave from leaking into the substrate 110, so as to improve a mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter, and meanwhile, the magnetoelectric antenna can obtain larger radiation capacity, so that the antenna module 10 has better communication effect when being used for communication.
With continued reference to fig. 20, the acoustic wave reflecting structure 170 includes a plurality of sub-reflecting layers 171 stacked along a predetermined direction. The sub-reflection layer 171 includes a first acoustic impedance layer 1711 and a second acoustic impedance layer 1712 stacked along a predetermined direction, where the acoustic impedance of the first acoustic impedance layer 1711 is greater than the acoustic impedance of the second acoustic impedance layer 1712, and the predetermined direction is a direction in which the substrate 110 points to the first conductive layer 120.
In the schematic diagram of the present embodiment, the acoustic wave reflecting structure 170 is illustrated by taking the example that the acoustic wave reflecting structure includes 3 sub-reflecting layers 171 stacked along the preset direction as an example, and in other embodiments, the number of the sub-reflecting layers 171 may be other numbers, for example, 2 layers, 4 layers, 5 layers, or the like. The multiple layers of the multiple sub-reflection layer 171 are greater than or equal to 2 layers.
For the sub-reflection layer 171 located at the same layer: the first acoustic impedance layer 1711 is adjacent to the substrate 110 compared to the second acoustic impedance layer 1712, the second acoustic impedance layer 1712 facing away from the substrate 110 compared to the first acoustic impedance layer 1711.
The acoustic wave reflecting structure 170 includes a plurality of sub-reflecting layers 171 stacked in a predetermined direction. The sub-reflection layer 171 includes a first acoustic impedance layer 1711 and a second acoustic impedance layer 1712 stacked in a predetermined direction, and the acoustic impedance of the first acoustic impedance layer 1711 is greater than that of the second acoustic impedance layer 1712, so that the reflection structure is a bragg reflection structure, which is also called a bragg reflection layer. The magnetoelectric antenna in the antenna module 10 provided in this embodiment is also referred to as a solid-state-assembly type broadband filtering magnetoelectric antenna.
The antenna module 10 further includes an acoustic wave reflecting structure 170, and the acoustic wave reflecting structure 170 includes a plurality of sub-reflecting layers 171 stacked along a predetermined direction. The sub-reflection layer 171 includes a first acoustic impedance layer 1711 and a second acoustic impedance layer 1712 stacked along a preset direction, where the acoustic impedance of the first acoustic impedance layer 1711 is greater than that of the second acoustic impedance layer 1712, so that the acoustic wave reflection structure 170 can limit the longitudinal acoustic wave generated by the piezoelectric resonance of the magnetoelectric antenna within the resonance area of the magnetoelectric antenna, so as to reduce or even prevent the energy of the acoustic wave from leaking into the substrate 110, so as to improve the mechanical Q value of the antenna module 10. The resonator with high Q value can bring about smaller insertion loss of the filter, and meanwhile, the magnetoelectric antenna can obtain larger radiation capacity, so that the antenna module 10 has better communication effect when being used for communication.
Referring to fig. 20 and 23, fig. 23 is a schematic cross-sectional view of the antenna module shown in fig. 20 along line II-II in an embodiment. In the cross-sectional view, the adjacent film layers in the antenna module 10 are attached to each other. In fig. 23, the substrate 110 has a carrying surface 110a and a back surface 110b opposite to the carrying surface 110a, and the acoustic wave reflecting structure 170 is disposed on the carrying surface 110a.
With continued reference to fig. 14 and 20, the second conductive layer 150 further includes an input portion 151 and an output portion 154. The input unit 151 is electrically connected to the first magnetostrictive unit 160 a. The output portion 154 and the input portion 151 are respectively disposed on opposite sides of the magnetostrictive layer 160, and the output portion 154 is set to a floating potential.
The output 154 is set to a levitation potential (also referred to as a free potential, or no load) that results in higher antenna radiation gain and antenna efficiency. When the antenna module 10 is used for communication, the communication effect is good.
In the present embodiment, the magnetoelectric antenna of the antenna module has a plurality of (eight as shown) magnetoelectric antenna regions (i.e., eight resonators), but is not limited thereto. The thicknesses of the multiple magnetoelectric antenna regions may be set to be the same or different, and the area of the resonance region is directly related to impedance matching (referring to the power of the input second radio frequency signal) and also related to the radiation capability of the magnetoelectric antenna. For example, the radiation capability of the magnetoelectric antenna is related to the thickness ratio of the piezoelectric layer 140 to the magnetostrictive layer 160, and in particular, when the thickness ratio of the piezoelectric layer 140 to the magnetostrictive layer 160 is three to one or about three to one, the radiation capability of the magnetoelectric antenna is better.
In this embodiment, the excitation mode of the magnetoelectric antenna may be based on bulk acoustic wave excitation (Bulk Acoustic Wave, BAW). It will be appreciated that in other embodiments, the excitation of the magneto-electric antenna may be a surface acoustic Wave (Surface Acoustic Wave, SAW) or Lamb Wave (Lamb Wave, lam).
Referring to fig. 24 and 25, fig. 24 is a schematic diagram of an antenna module according to another embodiment of the application; fig. 25 is a schematic cross-sectional view of fig. 24 taken along line III-III. The antenna module 10 further comprises a buffer layer 130. The buffer layer 130 is disposed between the substrate 110 and the first conductive layer 120.
In fig. 17 to 18, the first conductive layer 120 is directly disposed on the carrying surface 110 a. In fig. 25, the first conductive layer 120 is indirectly disposed on the carrying surface 110a, specifically, the first conductive layer 120 is disposed on the carrying surface 110a through a buffer layer 130. The buffer layer 130 may be, but is not limited to, a seed layer. In other words, the antenna module 10 further includes a buffer layer 130, and the buffer layer 130 is disposed between the substrate 110 and the first conductive layer 120.
The antenna module 10 further includes a buffer layer 130 that may be incorporated into the antenna module 10 provided in any of the previous embodiments, and the antenna module 10 illustrated in the schematic diagram of the present embodiment should not be construed as limiting the antenna module 10 provided in the present embodiment.
In this embodiment, the buffer layer 130 may be disposed on the carrying surface 110a of the substrate 110, and the first conductive layer 120 is disposed on a surface of the buffer layer 130 facing away from the carrying surface 110 a. The antenna module 10 further includes the buffer layer 130, where the buffer layer 130 is disposed between the substrate 110 and the first conductive layer 120, so that the quality of the first conductive layer 120 is higher, and the Q value of the antenna module 10 is improved, so that the antenna module 10 has better antenna performance.
Referring to fig. 26, fig. 26 is a schematic cross-sectional view of a magnetostrictive portion in a magnetostrictive layer of an antenna module according to an embodiment. The structure of the magnetostrictive layer 160 provided by the embodiments of the present application may be incorporated into the antenna module 10 provided by any of the previous embodiments. In one embodiment, the magnetostrictive layer 160 is made of a composite magnetic material. The magnetostrictive layer 160 includes a plurality of magnetostrictive sublayers 161 stacked in a predetermined direction. The magnetostrictive sub-layer 161 includes a magnetostrictive material layer 1611 and a dielectric material layer 1612 stacked along the preset direction, where the preset direction is a direction in which the substrate 110 points to the first conductive layer 120.
In the same magnetostrictive sub-layer 161: the layer of magnetostrictive material 1611 is closer to the substrate 110 than the layer of dielectric material 1612, and the layer of dielectric material 1612 is away from the substrate 110 than the layer of magnetostrictive material 1611.
The number of the multi-layer magnetostrictive sublayers 161 may be, but is not limited to, 10 layers or the like. In the schematic diagram of the present embodiment, the number of magnetostrictive sublayers 161 is exemplified by 10, and it should be understood that the magnetostrictive layers 160 provided in the embodiment of the present application should not be construed as limited.
The magnetostrictive sub-layer 161 includes a magnetostrictive material layer 1611 and a dielectric material layer 1612 stacked along the predetermined direction, and the dielectric material layer 1612 can reduce the magnetic domain size of the magnetoelectric antenna and reduce eddy current loss, so that the antenna module 10 has better antenna performance.
Further, in an embodiment, the magnetostrictive material layer 1611 comprises FeGaB and the dielectric material layer 1612 comprises Al 2O3.
When the number of the multi-layer magnetostrictive sub-layers 161 is 10 and the magnetostrictive material layer 1611 includes FeGaB and the dielectric material layer 1612 includes Al 2O3, the magnetostrictive layer 160 is (FeGaB/Al 2O3)×10 composite magnetostrictive film.
The magnetostrictive material layer 1611 comprises FeGaB, i.e., B-doped FeGa. The B doping can improve the soft magnetic performance of the magnetostrictive material layer 1611, and the dielectric material layer 1612 includes Al 2O3 to reduce the magnetic domain size of the magnetoelectric antenna, thereby reducing eddy current loss, and enabling the antenna module 10 to have better antenna performance.
The embodiment of the application also provides the electronic equipment 1. Referring to fig. 27, fig. 27 is a schematic diagram of an electronic device according to an embodiment of the application. The electronic device 1 comprises a communication circuit 2 as described in any of the previous embodiments. The communication circuit is described above, and will not be described in detail herein.
The electronic device 1 may be, but is not limited to, a device capable of receiving and transmitting electromagnetic wave signals, such as a mobile phone, a telephone, a television, a tablet computer, a camera, a personal computer, a notebook computer, an in-vehicle device, an earphone, a watch, a wearable device, a base station, an in-vehicle radar, a customer premise equipment (Customer Premise Equipment, CPE), and the like. The electronic device 1 may be, but is not limited to being, a full screen electronic device 1, or an approximately full screen electronic device 1, or a relatively low screen-to-screen electronic device 1 in general. The electronic device 1 is described by taking a mobile phone as an example in the present application, and it should be understood that the embodiment of the present application is not limited.
In one embodiment, the electronic device 1 further includes a display 50, a middle frame 60, and a battery cover 70. The display 50 and the battery cover 70 are respectively disposed on two opposite sides of the middle frame 60. The middle frame 60 and the battery cover 70 form an accommodating space, and the antenna module 10 is disposed in the accommodating space.
In summary, in the antenna module 10 in the communication circuit 2 of the electronic device 1 according to the embodiment of the present application, the input portion 151 and the grounding portion 152 in the second conductive layer 150 in the antenna module 10 receive the second radio frequency signal, the piezoelectric layer 140 generates and passes the first acoustic wave signal of the first preset frequency band according to the second radio frequency signal, so as to realize the function of the filter, and the first magnetostrictive portion 160a and the second magnetostrictive portion 160b of the magnetostrictive layer 160 jointly support the first electromagnetic wave signal of the first preset frequency band according to the first acoustic wave signal of the first preset frequency band, so as to realize the magnetoelectric antenna function. Therefore, the antenna module 10 provided by the embodiment of the application has the filtering function of the filter and the function of the magnetoelectric antenna, namely, the multiplexing of the filter and the magnetoelectric antenna function is realized, and compared with the independent filter and the independent magnetoelectric antenna, the antenna module 10 provided by the embodiment of the application has smaller size and lower cost.
While the foregoing is directed to embodiments of the present application, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the application, and such changes and modifications are intended to be included within the scope of the application.
Claims (22)
1. The radio frequency front end antenna integrated module is characterized by comprising an integrated structure:
The radio frequency front end module is used for receiving a first radio frequency signal, processing the first radio frequency signal to obtain a second radio frequency signal and outputting the second radio frequency signal; and
The antenna module comprises a filter and a magnetoelectric antenna which are integrated into a whole, wherein the filter is used for receiving the second radio frequency signal, generating a first sound wave signal passing through a first preset frequency band according to the second radio frequency signal, and the magnetoelectric antenna is used for supporting a first electromagnetic wave signal of the first preset frequency band according to the first sound wave signal of the first preset frequency band.
2. The rf front-end antenna integrated module of claim 1, wherein the rf front-end module comprises:
The first switch comprises a first receiving end and a plurality of first output ends, wherein the first receiving end can be electrically connected with one of the first output ends, and the first receiving end is used for receiving a second radio frequency signal; and
The power amplifiers are electrically connected with the first output ends in a one-to-one correspondence manner and are used for amplifying the received second radio frequency signals;
The radio frequency front end antenna integrated module comprises a plurality of antenna modules, wherein the antenna modules are electrically connected with the power amplifier in a one-to-one correspondence manner and are used for supporting the first electromagnetic wave signals according to the second radio frequency signals amplified by the power amplifier.
3. The integrated radio frequency front-end antenna module according to claim 2, wherein the antenna module is further configured to receive a second electromagnetic wave signal in a second preset frequency band, and obtain a third radio frequency signal according to the second electromagnetic wave signal;
the radio frequency front end module is further configured to obtain a fourth radio frequency signal according to the third radio frequency signal and after processing the third radio frequency signal, and output the fourth radio frequency signal.
4. The rf front-end antenna integrated module of claim 3, wherein the rf front-end module further comprises:
The low-noise amplifiers are electrically connected with the antenna modules in a one-to-one correspondence manner, and are used for receiving the third radio frequency signals and amplifying the third radio frequency signals to obtain the fourth radio frequency signals; and
The second switch comprises a plurality of second receiving ends and second output ends, the second receiving ends are electrically connected with the low noise amplifiers in one-to-one correspondence, and one of the second receiving ends can be electrically connected with the second output ends.
5. The rf front-end antenna integrated module of claim 4, wherein the plurality of antenna modules comprises:
the first antenna sub-module comprises two filters to form a duplexer, the two filters are integrated with the magneto-electric antenna, one of the two filters is electrically connected to the power amplifier, and the other of the two filters is electrically connected to the low noise amplifier.
6. The rf front-end antenna integrated module of claim 4, further comprising:
a third switch comprising two first ends, one of the two first ends being electrically connected to the power amplifier, the other of the two first ends being electrically connected to the low noise amplifier, and one second end being electrically connectable with one of the two first ends; the plurality of antenna modules includes:
The second antenna sub-module is electrically connected to the second end, and comprises a filter and a magneto-electric antenna which are integrated into a whole.
7. The rf front-end antenna integrated module of any of claims 1-6, wherein the rf front-end module is integrated with the antenna module as one module.
8. The radio frequency front end antenna integrated module according to any one of claims 1-6, wherein the antenna module comprises:
the substrate is provided with a bearing surface and a first area and a second area which are connected;
a first conductive layer carried on one side of the carrying surface of the substrate;
The piezoelectric layer is arranged on one side of the first conductive layer, which is away from the substrate;
the second conductive layer is arranged on one side of the piezoelectric layer, which is away from the substrate, and corresponds to the first area; and
The magnetostriction layer is arranged on one side, away from the substrate, of the piezoelectric layer, is connected with the second conductive layer and is arranged corresponding to the second area;
the filter includes a filter located in the first region: a substrate portion, a first conductive layer portion, a piezoelectric layer portion, and a second conductive layer; the magneto-electric antenna comprises a first area and a second area: a substrate portion, a first conductive layer portion, a piezoelectric layer portion, and the magnetostrictive layer;
The second radio frequency signal of the filter generates bulk acoustic wave oscillation so as to realize frequency selection of the second radio frequency signal of the first preset frequency band, and the magneto-electric antenna is used for generating a first electromagnetic wave signal of the first preset frequency band according to the second radio frequency signal of the first preset frequency band.
9. The rf front-end antenna integrated module of claim 8, wherein the second conductive layer comprises:
The input part is used for receiving the radio frequency signals;
a first resonance portion connected to the input portion;
a second resonance part connected to the first resonance part;
the first region of the substrate comprises a first sub-region and a second sub-region; the antenna module includes:
A first resonator comprising a first resonator located in the first sub-region: substrate portion, first conductive layer portion, piezoelectric layer portion
The first resonator has a first resonance frequency f 1; and
A second resonator comprising a first resonator located in the first sub-region: the substrate part, the first conducting layer part, the piezoelectric layer part and the second resonance part, wherein the second resonator has a second resonance frequency f 2, the second resonance frequency f 2 is smaller than the first resonance frequency f 1, and the frequency f of the first preset frequency band meets the following conditions: f 2≤f≤f1.
10. The rf front-end antenna integrated module of claim 8, wherein the antenna module further has: and the sound wave signal reflection structure is used for limiting a longitudinal sound wave signal generated by piezoelectric resonance of the magnetoelectric antenna to a resonance area of the magnetoelectric antenna.
11. The rf front-end antenna integrated module of claim 10, wherein the substrate further has a back surface facing away from the carrier surface, the substrate further has a cavity, the opening of the cavity is located on the carrier surface, or the opening of the cavity is located on the carrier surface and the back surface, and wherein the acoustic signal reflecting structure comprises the cavity.
12. The rf front-end antenna integrated module of claim 8, wherein the antenna module further comprises: and the buffer layer is arranged between the substrate and the first conductive layer.
13. The radio frequency front end antenna integrated module of claim 8, wherein the magnetostrictive layer comprises a plurality of magnetostrictive sublayers arranged in a predetermined direction, wherein the magnetostrictive sublayers comprise magnetostrictive material layers and dielectric material layers arranged in the predetermined direction, wherein the predetermined direction is a direction in which a substrate points to the first conductive layer.
14. The radio frequency front end antenna integrated module of any of claims 1-6, the antenna module comprising:
a substrate having a first region and a second region;
the first conductive layer is arranged on one side of the substrate;
The piezoelectric layer is arranged on one side of the first conductive layer, which is away from the substrate;
The second conductive layer is arranged on one side of the piezoelectric layer, which is away from the substrate; and
The magnetostrictive layer is arranged on one side, away from the substrate, of the piezoelectric layer, and comprises a first magnetostrictive part and a second magnetostrictive part, wherein the first magnetostrictive part is arranged corresponding to the first area, the second magnetostrictive part is arranged corresponding to the second area and is electrically connected with the first magnetostrictive part, and the first magnetostrictive part and the second magnetostrictive part are electrically connected through the second conductive layer; the piezoelectric layer generates and passes through the acoustic wave signals of the first preset frequency band according to the second radio frequency signals, and the first magnetostriction part and the second magnetostriction part jointly generate the first electromagnetic wave signals of the first preset frequency band according to the acoustic wave signals of the first preset frequency band.
15. The rf front-end antenna integrated module of claim 14, wherein the second conductive layer is disposed on a surface of the piezoelectric layer facing away from the substrate, and the magnetostrictive layer is disposed on a surface of the second conductive layer facing away from the substrate.
16. The rf front-end antenna integrated module of claim 14, wherein the antenna module comprises:
A first resonator comprising: a substrate portion, a first conductive layer portion, a piezoelectric layer portion, a second conductive layer portion, and a first magnetostrictive portion;
a second resonator comprising a second region: a substrate portion, a first conductive layer portion, a piezoelectric layer portion, a second conductive layer portion, and a second magnetostrictive portion;
the first resonator has a first resonant frequency f 1, the second resonator has a second resonant frequency f 2, wherein the second resonant frequency f 2 is smaller than the first resonant frequency f 1, and the frequency f of the first preset frequency band satisfies: f 2≤f≤f1.
17. The rf front-end antenna integrated module of claim 16, wherein the antenna module further has: and the sound wave reflection structure is used for limiting sound waves of the preset frequency band to the resonance area of the first resonator and the resonance area of the second resonator of the antenna module.
18. The rf front-end antenna integrated module of claim 17, wherein the substrate has a bearing surface disposed adjacent to the first conductive layer and a back surface disposed opposite the bearing surface, the substrate further having a cavity with an opening at the bearing surface or an opening at the bearing surface and the back surface, wherein the acoustic wave reflecting structure comprises the cavity.
19. The rf front-end antenna integrated module of claim 17, wherein the acoustic wave reflecting structure is disposed between the substrate and the first conductive layer.
20. The rf front-end antenna integrated module of claim 19, wherein the acoustic wave reflecting structure comprises: the multilayer sub-reflection layer is arranged in a stacked mode along a preset direction, the sub-reflection layer comprises a first acoustic impedance layer and a second acoustic impedance layer which are stacked along the preset direction, the acoustic impedance of the first acoustic impedance layer is larger than that of the second acoustic impedance layer, and the preset direction is the direction that the substrate points to the first conductive layer.
21. A communication circuit, the communication circuit comprising:
a baseband chip;
the transceiver is electrically connected with the baseband chip; and
The rf front-end antenna integrated module of any one of claims 1-20, electrically connected to the transceiver.
22. An electronic device comprising the communication circuit of claim 20.
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CN202410374278.9A CN118249823A (en) | 2024-03-28 | 2024-03-28 | Radio frequency front-end antenna integrated module, communication circuit and electronic equipment |
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CN202410374278.9A CN118249823A (en) | 2024-03-28 | 2024-03-28 | Radio frequency front-end antenna integrated module, communication circuit and electronic equipment |
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