CN117976550A - Substrate manufacturing method and substrate - Google Patents
Substrate manufacturing method and substrate Download PDFInfo
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- CN117976550A CN117976550A CN202410365553.0A CN202410365553A CN117976550A CN 117976550 A CN117976550 A CN 117976550A CN 202410365553 A CN202410365553 A CN 202410365553A CN 117976550 A CN117976550 A CN 117976550A
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- 239000000758 substrate Substances 0.000 title claims abstract description 398
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 310
- 239000012790 adhesive layer Substances 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 238000012858 packaging process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 9
- 230000004048 modification Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The invention discloses a substrate manufacturing method and a substrate, wherein the substrate manufacturing method comprises the following steps: first, a first glass substrate and a second glass substrate are connected by a photosensitive adhesive layer, wherein the first glass substrate and the second glass substrate are laminated. Next, a through hole is formed in the first glass substrate in the thickness direction thereof, and the through hole is filled. Finally, the photosensitive bonding layer is reacted by laser to separate the first glass substrate from the second glass substrate, thereby obtaining the first glass substrate. The substrate comprises a first glass substrate, wherein through holes are formed in the first glass substrate along the thickness direction, and metal is filled in the through holes. The substrate manufacturing method and the substrate according to the present invention are capable of effectively avoiding chipping, warpage, and the like of the first glass substrate when processing the first glass substrate, and ensuring the processing accuracy and yield of the first glass substrate by laminating and connecting the first glass substrate and the second glass substrate, that is, by increasing the thickness of the first glass substrate.
Description
Technical Field
The present invention relates to the field of chip manufacturing technologies, and in particular, to a substrate manufacturing method and a substrate.
Background
Chiplet heterogeneous integration technology can realize multi-scale and multi-dimensional chip interconnection, so that the power supply efficiency is improved, delay is reduced, and chips with smaller size and higher performance are provided for high-performance computing, artificial intelligence, intelligent terminals and the like. Vertical direction interconnection of chips relies on Through Silicon Vias (TSVs) or glass vias (TGVs) and the like, and interconnection is performed in the horizontal direction by a redistribution line (RDL) technology.
Currently, the TGV substrate is a small-sized substrate, the thickness of the substrate is 0.3 mm-1.1 mm, when the substrate demand is large, a plurality of small-sized TGV substrates need to be processed for many times, and the processing cost is high due to low processing efficiency. In the related art, the TGV substrate processing efficiency can be effectively improved by processing the large-size TGV substrate and dividing the large-size TGV substrate into a plurality of small-size substrates. However, when the TGV substrate is thin, chipping and warpage of the substrate easily occur during processing, which may affect normal production of the substrate and increase processing costs.
Disclosure of Invention
The invention mainly aims to provide a substrate manufacturing method and a substrate, and aims to solve the technical problems of brittleness and warping in thin substrate processing.
To achieve the above object, an embodiment of a first aspect of the present invention provides a method for manufacturing a substrate, including the steps of:
connecting a first glass substrate and a second glass substrate by using a photosensitive bonding layer, wherein the first glass substrate and the second glass substrate are laminated;
forming a through hole on the first glass substrate along the thickness direction of the first glass substrate, and filling the through hole;
And reacting the photosensitive bonding layer by utilizing laser so as to separate the first glass substrate from the second glass substrate, thereby obtaining the first glass substrate.
In some embodiments, the step of reacting the photosensitive adhesive layer with a laser to separate the first glass substrate from the second glass substrate includes:
and irradiating one side of the second glass substrate, which is away from the first glass substrate, by using laser so as to separate the second glass substrate from the photosensitive bonding layer.
In some embodiments, before the step of reacting the photosensitive adhesive layer with a laser to separate the first glass substrate from the second glass substrate, the method comprises:
and carrying out a chip packaging process on one side of the first glass substrate, which is away from the second glass substrate.
In some embodiments, the step of forming the first glass substrate into the through hole in the thickness direction thereof includes:
and performing induced modification on the first glass substrate by laser, and etching the first glass substrate by using an HF solution so as to form the through hole on the first glass substrate along the thickness direction.
In some embodiments, the step of filling the via hole includes:
and performing magnetron sputtering on the through hole to form a seed layer, filling the through hole with a copper body through electroplating, and removing the seed layer at the periphery of the through hole to obtain a copper column.
In some embodiments, the step of forming a through hole in the first glass substrate along the thickness direction thereof, and filling the through hole includes:
and forming through holes on the first glass substrate and the second glass substrate along the thickness direction, and filling the through holes of the first glass substrate.
An embodiment of a second aspect of the present invention provides a substrate obtained by the method for manufacturing a substrate according to the above embodiment, the substrate including:
and the first glass substrate is provided with a through hole along the thickness direction, and the through hole is filled with metal.
An embodiment of a third aspect of the present invention provides a substrate, including:
a first glass substrate;
A second glass substrate connected to the first glass substrate and arranged in a stacked manner;
the first glass substrate is provided with a through hole along the thickness direction of the first glass substrate, and metal fills the through hole.
In some embodiments, the thickness of the second glass substrate is greater than the thickness of the first glass substrate, the thickness of the first glass substrate being L 1, wherein 0.05 mm.ltoreq.L 1.ltoreq.0.3 mm; the thickness of the second glass substrate is L 2, wherein L 2 is more than or equal to 0.5mm and less than or equal to 2mm.
In some embodiments, the substrate comprises a photosensitive adhesive layer, the photosensitive adhesive layer is located between the first glass substrate and the second glass substrate, the material of the photosensitive adhesive layer is polyimide, and the thickness of the photosensitive adhesive layer is L 3, wherein L 3 is more than or equal to 2um and less than or equal to 20um.
Compared with the prior art, the invention has the beneficial effects that:
In the technical scheme of the invention, the substrate manufacturing method comprises the following steps: connecting the first glass substrate and the second glass substrate by using a photosensitive bonding layer, wherein the first glass substrate and the second glass substrate are laminated; forming a through hole on the first glass substrate along the thickness direction of the first glass substrate, and filling the through hole; the photosensitive adhesive layer is reacted by laser to separate the first glass substrate from the second glass substrate, thereby obtaining the first glass substrate. In the prior art, when a thin glass substrate is directly processed, chipping, warpage, and the like of the thin glass substrate are liable to occur. In this embodiment, the first glass substrate and the second glass substrate are laminated and connected, that is, the thickness of the first glass substrate is increased, so that the first glass substrate can be effectively prevented from being broken when the first glass substrate is processed, and the first glass substrate can be prevented from being warped. And after the through holes of the first glass substrate are filled, the first glass substrate is separated from the second glass substrate, so that the first glass substrate with high quality and large size can be obtained, namely, the processing efficiency can be improved, and the production cost can be reduced. Additionally, this scheme is through setting up photosensitive adhesive layer for the connection and the separation convenient operation of first glass substrate and second glass substrate are swift, can further promote machining efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a substrate according to an embodiment of the invention; wherein the first glass substrate and the second glass substrate are not connected and a modified region of the first glass substrate is shown;
FIG. 2 is a schematic diagram of a substrate according to an embodiment of the invention; wherein the first glass substrate and the second glass substrate are connected through the photosensitive bonding layer;
FIG. 3 is a schematic view of a substrate according to an embodiment of the invention; wherein the first glass substrate forms a through hole;
FIG. 4 is a schematic view of a substrate according to an embodiment of the invention; wherein the metal fills the through hole;
FIG. 5 is a schematic view of a substrate according to an embodiment of the invention; wherein the package structure is shown;
FIG. 6 is a schematic diagram of a substrate according to an embodiment of the invention; wherein, the second glass substrate is separated from the photosensitive bonding layer, and a plurality of arrows in the figure indicate the laser irradiation direction;
FIG. 7 is a schematic view of a substrate according to an embodiment of the invention;
FIG. 8 is a flowchart illustrating an exemplary method for fabricating a substrate according to an embodiment of the present invention;
fig. 9 is an operation flowchart of a substrate manufacturing method according to another embodiment of the present invention.
Reference numerals illustrate:
a substrate 10;
a first glass substrate 100; a through hole 110; a metal 120; a modification zone 130; a package structure 140; a wiring layer 141; an encapsulation layer 142; a chip 143;
A second glass substrate 200;
A photosensitive adhesive layer 300;
thickness direction X.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Currently, the TGV substrate is a small-sized substrate, the thickness of the substrate is 0.3 mm-1.1 mm, when the substrate demand is large, a plurality of small-sized TGV substrates need to be processed for many times, and the processing cost is high due to low processing efficiency. In the related art, the TGV substrate processing efficiency can be effectively improved by processing the large-size TGV substrate and dividing the large-size TGV substrate into a plurality of small-size substrates. However, when the TGV substrate is thin, chipping and warpage of the substrate easily occur during processing, which may affect normal production of the substrate and increase processing costs.
In view of this, the embodiment of the first aspect of the present application proposes a substrate manufacturing method by which chipping, warpage, and the like of the substrate 10 can be effectively avoided. The substrate manufacturing method may be used to manufacture the TGV substrate 10, the TSV substrate 10, or the like, and some embodiments of the present application are described with reference to the use of the TGV substrate 10. A substrate manufacturing method according to an embodiment of the present application will be described with reference to fig. 1 to 9. Specifically, referring to fig. 8, the substrate manufacturing method includes the steps of:
S101: referring to fig. 1 and 2, the first glass substrate 100 and the second glass substrate 200 are connected using the photosensitive adhesive layer 300, wherein the first glass substrate 100 and the second glass substrate 200 are laminated. It should be noted that, in some embodiments, the thicknesses of the first glass substrate 100 and the second glass substrate 200 may be the same. In other embodiments, the thicknesses of the first glass substrate 100 and the second glass substrate 200 may also be different. Specifically, the thickness of the second glass substrate 200 may be greater than that of the first glass substrate 100, i.e., the processing difficulty of the second glass substrate 200 may be reduced, and the processing cost may be reduced. Some embodiments of the application are described with reference to the second glass substrate 200 having a thickness greater than that of the first glass substrate 100.
Similarly, in other embodiments, a plurality of second glass substrates 200 may be stacked and connected with the first glass substrate 100 to ensure the stability of the processing of the first glass substrate 100, and the specific number of the second glass substrates 200 may be determined according to practical situations, and in some embodiments, the stacking and connecting of a single second glass substrate 200 with the first glass substrate 100 are described as an example.
Since the first glass substrate 100 and the second glass substrate 200 are connected and laminated in the thickness direction X, that is, the thickness of the first glass substrate 100 is increased, warpage and chipping of the first glass substrate 100 can be reduced when processing the first glass substrate 100, and the processing stability can be ensured.
S102: referring to fig. 2 to 4, the first glass substrate 100 is formed with a through hole 110 along a thickness direction X thereof, and the through hole 110 is filled. Referring to the orientation in fig. 3, the thickness direction X of the first glass substrate 100 is directed in the up-down direction. It should be noted that the number of the through holes 110 may be set to be single or plural, and some embodiments of the present application are described by taking the case of providing plural through holes 110 as an example, and the specific shape of the through holes 110 may depend on the actual situation. By filling the through-hole 110, the processing of the first glass substrate 100 can be completed.
S103: referring to fig. 5 and 6, the photosensitive adhesive layer 300 is reacted by laser to separate the first glass substrate 100 from the second glass substrate 200, thereby obtaining the first glass substrate 100. After the first glass substrate 100 finishes various processing treatments, the first glass substrate 100 and the second glass substrate 200 are separated to obtain the ultrathin first glass substrate 100, so as to meet the chip processing requirement with high requirements.
In the technical scheme of the invention, the substrate manufacturing method comprises the following steps: connecting the first glass substrate 100 and the second glass substrate 200 by using the photosensitive adhesive layer 300, wherein the first glass substrate 100 and the second glass substrate 200 are laminated; forming a through hole 110 in the first glass substrate 100 along the thickness direction X thereof, filling the through hole 110; the photosensitive adhesive layer 300 is reacted by laser to separate the first glass substrate 100 from the second glass substrate 200, thereby obtaining the first glass substrate 100. In the prior art, when a thin glass substrate is directly processed, chipping, warpage, and the like of the thin glass substrate are liable to occur. In this embodiment, the first glass substrate 100 and the second glass substrate 200 are laminated and connected, that is, the thickness of the first glass substrate 100 is increased, so that chipping of the first glass substrate 100 can be effectively avoided when the first glass substrate 100 is processed, and warpage of the first glass substrate 100 can be suppressed. When the filling of the through holes 110 of the first glass substrate 100 is completed, the first glass substrate 100 is separated from the second glass substrate 200, so that the high-quality and large-size first glass substrate 100 can be obtained, that is, the processing efficiency can be improved and the production cost can be reduced. Further, since the thickness of the processed first glass substrate 100 is relatively thin, i.e. the aspect ratio of the through hole 110 is greatly reduced, some products with low aspect ratio can adopt a conventional low-energy magnetron sputtering method to deposit the seed layer of the metal 120, and compared with a method of performing high-energy ionization magnetron sputtering on the through hole 110 with relatively large aspect ratio, the cost of the conventional low-energy magnetron sputtering operation is lower. Additionally, the photosensitive adhesive layer 300 is provided, so that the connection and separation operations of the first glass substrate 100 and the second glass substrate 200 are convenient and quick, and the processing efficiency can be further improved.
In some embodiments, referring to fig. 1 and 2, the first glass substrate 100 is laminated and connected with the second glass substrate 200 in the thickness direction X using the photosensitive adhesive layer 300. It should be noted that in some embodiments, all the intervals between the first glass substrate 100 and the second glass substrate 200 may be filled with the photosensitive adhesive layer 300. In other embodiments, the photosensitive adhesive layer 300 may also be used to fill a portion of the space between the first glass substrate 100 and the second glass substrate 200. Some embodiments of the present application are described taking as an example that the photosensitive adhesive layer 300 fills all the intervals between the first glass substrate 100 and the second glass substrate 200.
It should be noted that, the material of the photosensitive adhesive layer 300 may be polyimide, which is a photosensitive material, and etching can be performed by irradiating the material with laser light, so as to facilitate separation of the second glass substrate 200 from the first glass substrate 100.
In some embodiments, the step of reacting the photosensitive adhesive layer 300 with the laser to separate the first glass substrate 100 from the second glass substrate 200 includes:
Referring to fig. 5 and 6, the second glass substrate 200 is irradiated with laser light at a side facing away from the first glass substrate 100 such that the second glass substrate 200 is separated from the photosensitive adhesive layer 300, thereby achieving separation of the first glass substrate 100 from the second glass substrate 200. Compared with the scheme of connecting two glass substrates by using epoxy resin, the scheme only needs to use laser irradiation when separating the two glass substrates, and can omit the soaking process (using acetone or 3M photoresist remover) of the substrate 10, namely the separation process of the scheme is convenient and quick. And this scheme need not to utilize laser irradiation adhesive layer in order to make its solidification design when connecting the glass substrate, can also ensure the stability that first glass substrate 100 and second glass substrate 200 are connected.
In some embodiments, before the step of reacting the photosensitive adhesive layer 300 with the laser to separate the first glass substrate 100 from the second glass substrate 200, it includes:
A chip packaging process is performed on a side of the first glass substrate 100 facing away from the second glass substrate 200. When the size of the first glass substrate 100 is larger, the packaging process of the first glass substrate 100 before the first glass substrate 100 is separated from the second glass substrate 200 can effectively prevent the first glass substrate 100 from buckling and deforming, and ensure the processing precision and the processing quality of the first glass substrate 100. Referring to fig. 5, it should be noted that the first glass substrate 100 after completing the packaging process may form a package structure 140. The package structure 140 includes a wiring layer 141, a chip 143, and a package layer 142. The wiring layer 141 may be an RDL (re-wiring) layer. The encapsulation layer 142 may be an EMC (epoxy molding) encapsulation layer 142. The wiring layer 141 may be between the encapsulation layer 142 and the first glass substrate 100, and the chip 143 may be disposed in the encapsulation layer 142. The specific operation of the packaging process may be referred to in the related art.
It should be noted that, in other embodiments, when the size of the first glass substrate 100 is smaller, the first glass substrate 100 and the second glass substrate 200 may be separated and then the glass substrate 10 is packaged, where the packaging process of the first glass substrate 100 is less affected.
In some embodiments, the step of forming the first glass substrate 100 into the through-hole 110 along the thickness direction X thereof includes:
referring to fig. 2 and 3, the first glass substrate 100 may be subjected to induced modification by the laser, that is, the first glass substrate 100 may form the modified region 130. It should be noted that the modified region 130 of the first glass substrate 100 is easily dissolved in HF solution after being modified. Specific operations for inducing modification may be referred to in the related art, and will not be described herein.
Referring to fig. 3, the first glass substrate 100 may be etched with an HF solution such that the first glass substrate 100 forms the through-holes 110 in the thickness direction X, i.e., the first glass substrate 100 may be conveniently subjected to a subsequent filling process.
In some embodiments, the step of filling the via 110 includes:
The through holes 110 are magnetically sputtered to form a seed layer, the through holes 110 are filled with copper bodies through electroplating, and the seed layer at the periphery of the through holes 110 is removed to obtain copper pillars. The processing of the first glass substrate 100 can be completed through the above-described operation steps. The specific operation of filling the through-hole 110 may be referred to the related art.
In some embodiments, the step of forming the first glass substrate 100 into the through-hole 110 along the thickness direction X thereof, and filling the through-hole 110 includes:
the through holes 110 are formed in the thickness direction X of both the first glass substrate 100 and the second glass substrate 200, and the through holes 110 of the first glass substrate 100 are filled. By performing laser modification treatment on the through hole region preset in the first glass substrate 100, the processing precision does not need to be controlled deliberately when the first glass substrate 100 is subjected to modification etching, so that the processing difficulty can be reduced, and the processing cost can be reduced.
An embodiment of the second aspect of the present application proposes a substrate 10, the substrate 10 being obtained by the substrate manufacturing method according to the above embodiment. A substrate 10 according to an embodiment of the present application will be described with reference to fig. 1 to 6. Referring to fig. 6, in particular, the substrate 10 includes a first glass substrate 100. Wherein the first glass substrate 100 is provided with a through hole 110 in a thickness direction X, and the metal 120 fills the through hole 110. It is understood that the metal 120 herein may be copper metal 120 or the like. The number of the through holes 110 of the first glass substrate 100 may be plural, and the copper metal 120 is filled in each of the through holes 110. In the substrate 10 of the present embodiment, the first glass substrate 100 and the second glass substrate 200 are laminated and connected during processing, that is, the thickness of the first glass substrate 100 is increased, so that chipping, warpage, and the like of the first glass substrate 100 can be effectively avoided when the first glass substrate 100 is processed, and the processing accuracy and yield of the first glass substrate 100 are ensured. Additionally, the photosensitive adhesive layer 300 is provided, so that the connection and separation operations of the first glass substrate 100 and the second glass substrate 200 are convenient and quick, and the processing efficiency can be further improved.
Referring to fig. 4, a third embodiment of the present invention provides a substrate 10, wherein the substrate 10 includes a first glass substrate 100 and a second glass substrate 200. The second glass substrate 200 is connected to the first glass substrate 100 and is arranged in a stacked manner. Wherein, the first glass substrate 100 is provided with a through hole 110 along a thickness direction X thereof, and the metal 120 fills the through hole 110. In the substrate 10 of the present embodiment, the first glass substrate 100 and the second glass substrate 200 are laminated and connected, that is, the thickness of the first glass substrate 100 is increased, so that chipping of the first glass substrate 100 can be effectively avoided when the first glass substrate 100 is processed, and warpage of the first glass substrate 100 can be suppressed. When the filling of the through holes 110 of the first glass substrate 100 is completed, the first glass substrate 100 is separated from the second glass substrate 200, so that the high-quality first glass substrate 100 can be obtained, that is, the processing efficiency can be improved and the production cost can be reduced.
The specific thickness settings of the first glass substrate 100 and the second glass substrate 200 are described below. In some embodiments, the thickness of the second glass substrate 200 may be greater than the thickness of the first glass substrate 100. The thickness of the first glass substrate 100 may be L 1, wherein 0.05 mm.ltoreq.L 1.ltoreq.0.3 mm. Illustratively, L 1 may be 0.05mm, 0.1mm, 0.14mm, 0.2mm, 0.25mm, 0.3mm, etc., and the specific thickness of the first glass substrate 100 may be practical. Preferably, 0.1 mm.ltoreq.L 1.ltoreq.0.2 mm, i.e. L 1 may be 0.1mm, 0.14mm, 0.17mm or 0.2mm etc.
The thickness of the second glass substrate 200 may be L 2, wherein 0.5 mm.ltoreq.L 2.ltoreq.2 mm. Illustratively, L 2 may be 0.5mm, 0.8mm, 1mm, 1.3mm, 1.5mm, 1.8mm, 2mm, or the like. Preferably, 0.7 mm.ltoreq.L 2.ltoreq.1.1 mm, i.e. L 2 may be 0.7mm, 0.85mm, 0.9mm, 1.05mm or 1.1mm etc. In this embodiment, the second glass substrate 200 adopts the thickness range described above to facilitate processing, and on the other hand, it can be connected with the first glass substrate 100 in a stacked manner, so as to ensure the stability of processing the first glass substrate 100.
The specific connection arrangement of the first glass substrate 100 and the second glass substrate 200 will be described below. In some embodiments, the substrate 10 includes a photosensitive adhesive layer 300, and the photosensitive adhesive layer 300 may connect the first glass substrate 100 and the second glass substrate 200. The photosensitive adhesive layer 300 may be disposed between the first glass substrate 100 and the second glass substrate 200. The material of the photosensitive adhesive layer 300 may be polyimide or the like. The thickness of the photosensitive adhesive layer 300 is L 3, wherein L 3 is more than or equal to 2um and less than or equal to 20um. Illustratively, the thickness of L 3 can be 2um, 4um, 7um, 11um, 15um, 16um, 18um, 20um, or the like. Preferably, 5 um.ltoreq.L 3.ltoreq.10um, i.e. L 3 may be 5um, 5.5um, 7um, 9um or 10um etc. The first glass substrate 100 and the second glass substrate 200 are connected through the photosensitive adhesive layer 300, so that the stability of connection between the first glass substrate 100 and the second glass substrate 200 can be ensured, and the first glass substrate 100 and the second glass substrate 200 can be separated conveniently by utilizing the material characteristic of the photosensitive adhesive layer 300.
Referring to fig. 9, the following describes specific operation steps of a substrate manufacturing method according to an embodiment:
S201: referring to fig. 1, a first glass substrate 100 and a second glass substrate 200 are prepared, and a laser is induced to modify the first glass substrate 100. It can be understood that the first glass substrate 100 forms the modified region 130 after being subjected to the induction modification, and the position of the modified region 130 is the position of the through hole 110 of the first glass substrate 100 to be processed later. It should be noted that the modified region 130 is readily soluble in HF solution.
S202: referring to fig. 2, the first glass substrate 100 is laminated and connected with the second glass substrate 200 in the thickness direction X thereof by the photosensitive adhesive layer 300. The photosensitive adhesive layer 300 is between the first glass substrate 100 and the second glass substrate 200, and the material of the photosensitive adhesive layer 300 may be a polyimide material.
S203: referring to fig. 3, the first glass substrate 100 is etched with an HF solution such that the first glass substrate 100 forms a through hole 110 in a thickness direction X thereof. Specifically, the connected first glass substrate 100 and second glass substrate 200 are placed in an HF solution, and the modified region 130 of the first glass substrate 100 is etched by the HF solution to form the through hole 110.
S204: referring to fig. 4, the via hole 110 is magnetron sputtered to form a seed layer, the via hole 110 is filled with copper body by electroplating, and the seed layer at the periphery of the via hole 110 is removed to obtain a copper pillar.
S205: referring to fig. 5, a packaging process is performed on a side of the first glass substrate 100 facing away from the second glass substrate 200. It should be noted that the first glass substrate 100 may form the package structure 140 after the packaging process is completed. The package structure 140 includes a wiring layer 141, a chip 143, and a package layer 142. The wiring layer 141 may be an RDL (re-wiring) layer. The encapsulation layer 142 may be an EMC (epoxy molding) encapsulation layer 142. The wiring layer 141 may be between the encapsulation layer 142 and the first glass substrate 100, and the chip 143 may be disposed in the encapsulation layer 142. The specific operation of the packaging process may be referred to in the related art.
S206: referring to fig. 6, in some embodiments, a side of the second glass substrate 200 facing away from the first glass substrate 100 is irradiated with laser light to separate the second glass substrate 200 from the photosensitive adhesive layer 300, thereby obtaining the first glass substrate 100.
It should be noted that, in other embodiments, after the second glass substrate 200 is separated from the photosensitive adhesive layer 300, the photosensitive adhesive layer 300 connected to the first glass substrate 100 may be etched to expose the copper pillars. And the packaging process can be continued on that side, and the specific packaging process operation can be consistent with the embodiments described above. It is understood that the signals of the package structures 140 at both sides of the first glass substrate 100 in the thickness direction may be communicated through the copper pillars.
In some embodiments, the photosensitive adhesive layer 300 may be etched using a laser. In other embodiments, the photosensitive adhesive layer 300 may also be etched using plasma. The specific etching operation of the photosensitive adhesive layer 300 may be dependent on the actual situation. It will be appreciated that in some embodiments, portions of the photosensitive adhesive layer 300 on the first glass substrate 100 may be etched away. In other embodiments, all of the photosensitive adhesive layer 300 on the first glass substrate 100 may also be etched away. Referring to fig. 6, some embodiments of the application are illustrated with respect to etching all photosensitive adhesive layers.
It should be noted that, if a directional indication (such as up, down, left, right, front, and rear … …) is included in the embodiment of the present invention, the directional indication is merely used to explain a relative positional relationship, a movement condition, and the like between the components in a specific posture, and if the specific posture is changed, the directional indication is correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, if "and/or", "and/or" and/or "are used throughout, the meaning includes three parallel schemes, for example," a and/or B ", including a scheme, or B scheme, or a scheme where a and B meet simultaneously. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The foregoing description of the preferred embodiments of the present invention should not be construed as limiting the scope of the invention, but rather should be understood to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the following description and drawings or any application directly or indirectly to other relevant art(s).
Claims (10)
1. A method of manufacturing a substrate, comprising the steps of:
connecting a first glass substrate and a second glass substrate by using a photosensitive bonding layer, wherein the first glass substrate and the second glass substrate are laminated;
forming a through hole on the first glass substrate along the thickness direction of the first glass substrate, and filling the through hole;
And reacting the photosensitive bonding layer by utilizing laser so as to separate the first glass substrate from the second glass substrate, thereby obtaining the first glass substrate.
2. The method for manufacturing a substrate according to claim 1, wherein the step of reacting the photosensitive adhesive layer with a laser to separate the first glass substrate from the second glass substrate comprises:
and irradiating one side of the second glass substrate, which is away from the first glass substrate, by using laser so as to separate the second glass substrate from the photosensitive bonding layer.
3. The method for manufacturing a substrate according to claim 1, wherein before the step of reacting the photosensitive adhesive layer with the laser to separate the first glass substrate from the second glass substrate, the method comprises:
and carrying out a chip packaging process on one side of the first glass substrate, which is away from the second glass substrate.
4. The substrate manufacturing method according to claim 1, wherein the step of forming the first glass substrate into the through-hole in the thickness direction thereof comprises:
and performing induced modification on the first glass substrate by laser, and etching the first glass substrate by using an HF solution so as to form the through hole on the first glass substrate along the thickness direction.
5. The method of manufacturing a substrate according to claim 1, wherein the step of filling the through hole includes:
and performing magnetron sputtering on the through hole to form a seed layer, filling the through hole with a copper body through electroplating, and removing the seed layer at the periphery of the through hole to obtain a copper column.
6. The method for manufacturing a substrate according to claim 1, wherein the step of forming a through hole in the first glass substrate in the thickness direction thereof and filling the through hole comprises:
and forming through holes on the first glass substrate and the second glass substrate along the thickness direction, and filling the through holes of the first glass substrate.
7. A substrate obtained by the substrate manufacturing method according to any one of claims 1 to 6, comprising:
and the first glass substrate is provided with a through hole along the thickness direction, and the through hole is filled with metal.
8. A substrate, comprising:
a first glass substrate;
A second glass substrate connected to the first glass substrate and arranged in a stacked manner;
the first glass substrate is provided with a through hole along the thickness direction of the first glass substrate, and metal fills the through hole.
9. The substrate of claim 8, comprising:
the thickness of the second glass substrate is larger than that of the first glass substrate, and the thickness of the first glass substrate is L 1, wherein L 1 is more than or equal to 0.05mm and less than or equal to 0.3mm; the thickness of the second glass substrate is L 2, wherein L 2 is more than or equal to 0.5mm and less than or equal to 2mm.
10. The substrate of claim 8, wherein,
The substrate comprises a photosensitive bonding layer, the photosensitive bonding layer is positioned between the first glass substrate and the second glass substrate, the photosensitive bonding layer is made of polyimide, and the thickness of the photosensitive bonding layer is L 3, wherein L 3 is more than or equal to 2um and less than or equal to 20um.
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| CN202410365553.0A CN117976550A (en) | 2024-03-28 | 2024-03-28 | Substrate manufacturing method and substrate |
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| CN202410365553.0A CN117976550A (en) | 2024-03-28 | 2024-03-28 | Substrate manufacturing method and substrate |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150313020A1 (en) * | 2014-04-28 | 2015-10-29 | Asahi Glass Company, Limited | Method of manufacturing glass component, glass component, and glass interposer |
| US20170358447A1 (en) * | 2014-10-03 | 2017-12-14 | Nippon Sheet Glass Company, Limited | Method for producing glass substrate with through glass vias and glass substrate |
| WO2023100586A1 (en) * | 2021-11-30 | 2023-06-08 | 凸版印刷株式会社 | Multilayer wiring board manufacturing method, and multilayer wiring board |
| CN116631975A (en) * | 2023-03-29 | 2023-08-22 | 厦门云天半导体科技有限公司 | Multilayer glass substrate adopting composite bonding material and manufacturing process |
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- 2024-03-28 CN CN202410365553.0A patent/CN117976550A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150313020A1 (en) * | 2014-04-28 | 2015-10-29 | Asahi Glass Company, Limited | Method of manufacturing glass component, glass component, and glass interposer |
| US20170358447A1 (en) * | 2014-10-03 | 2017-12-14 | Nippon Sheet Glass Company, Limited | Method for producing glass substrate with through glass vias and glass substrate |
| WO2023100586A1 (en) * | 2021-11-30 | 2023-06-08 | 凸版印刷株式会社 | Multilayer wiring board manufacturing method, and multilayer wiring board |
| CN116631975A (en) * | 2023-03-29 | 2023-08-22 | 厦门云天半导体科技有限公司 | Multilayer glass substrate adopting composite bonding material and manufacturing process |
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