CN117754453A - Polishing pad and polishing apparatus - Google Patents
Polishing pad and polishing apparatus Download PDFInfo
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- CN117754453A CN117754453A CN202311847910.9A CN202311847910A CN117754453A CN 117754453 A CN117754453 A CN 117754453A CN 202311847910 A CN202311847910 A CN 202311847910A CN 117754453 A CN117754453 A CN 117754453A
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Abstract
The invention discloses a chemical mechanical polishing pad, which comprises a polishing layer, wherein the polishing layer comprises a central area arranged in the center of the polishing layer, a peripheral area arranged at the periphery of the polishing layer and a connecting area positioned between the central area and the peripheral area, the connecting area comprises annular grooves and annular discontinuous grooves which are concentrically arranged, one or more annular discontinuous grooves are arranged between two adjacent annular grooves, the two adjacent annular grooves are communicated with each other from the discontinuous parts of the annular discontinuous grooves, and the discontinuous parts of the annular discontinuous grooves in an even-circle area and an odd-circle area formed by the two adjacent annular grooves are staggered. The invention provides a new groove design, which enables polishing solution to have different flow field distribution so as to finish grinding application of different processes. The invention staggers the annular intermittent grooves and the annular grooves, so that the retention time of the polishing liquid and the quantity of the polishing liquid on the polishing layer can be balanced, and a better grinding effect can be realized.
Description
Technical Field
The invention relates to the technical field of polishing. More particularly, the present invention relates to a polishing pad and an abrasive apparatus thereof.
Background
Chemical Mechanical Polishing (CMP) is currently the most common technique for polishing the surface of a workpiece. CMP is a composite technique obtained by combining chemical attack and mechanical removal, and is also the most commonly used technique for planarization of semiconductor wafers and the like.
Currently, in conventional CMP processes, a wafer is mounted on a carrier assembly of an abrasive apparatus, and the position at which the wafer contacts a polishing pad during polishing is set by adjusting relevant parameters. During polishing, the wafer is pressed against the polishing pad by a controlled pressure, and the polishing pad is rotated in the same or opposite direction as the wafer by an external drive force. In the relative rotation process, the polishing liquid is continuously dripped on the polishing pad, so that the surface of the wafer is subjected to planarization grinding through the mechanical action of the surface of the polishing pad and the chemical action of the polishing liquid, and the polishing of the wafer is realized.
During polishing, part of the polishing liquid flows from the grooves to the surface of the polishing pad due to the centrifugal force generated by the polishing pad, and part of the polishing liquid still exists in the grooves, so that the shape of the grooves influences the distribution of the flow field of the polishing liquid, thereby influencing the polishing characteristics of the polishing pad. Therefore, the invention provides a polishing pad with different distribution of the grinding fluid flow field so as to adapt to the requirements of different grinding processes.
Disclosure of Invention
It is an object of the present invention to solve at least the above problems and to provide at least the advantages to be described later.
It is a further object of the present invention to provide a chemical mechanical polishing pad having a polishing layer comprising annular grooves spaced apart and a plurality of concentric circular arc grooves of equal radius spaced apart and staggered. The grooves designed in this way can balance the retention time of the polishing liquid and the amount of the polishing liquid on the polishing layer, so as to achieve better grinding effect.
To achieve these objects and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, a chemical mechanical polishing pad is provided, including a polishing layer including a center region disposed at a center of the polishing layer, an outer peripheral region disposed at an outer periphery of the polishing layer, and a connection region between the center region and the outer peripheral region, the connection region including annular grooves and annular discontinuous grooves disposed concentrically, one or more annular discontinuous grooves disposed between adjacent two annular grooves, the adjacent two annular grooves being in communication with each other from a discontinuity of the annular discontinuous grooves, and discontinuities of the annular discontinuous grooves disposed alternately in even-numbered and odd-numbered ring regions formed by the adjacent two annular grooves.
Specifically, the annular intermittent groove at least comprises three concentric circular arc grooves with the same radius.
Specifically, the central angle alpha corresponding to the concentric circular arc grooves is between 20 and 120 degrees.
Specifically, the ratio of the central angle corresponding to the concentric arc grooves to the central angle corresponding to the intermittent position between two adjacent concentric arc grooves is 5-8:1.
Preferably, the connection region comprises a sparse region positioned on the inner side and a dense region positioned on the outer side of the sparse region, the width of the annular discontinuous grooves is recorded as W, the interval distance between the annular discontinuous grooves in the sparse region is 4.0-5.5W, and the interval distance between the annular discontinuous grooves in the dense region is 2.5-4.0W.
Preferably, the distance from the inner side to the outer side of the sparse zone is denoted as L 1 The distance from the inner side to the outer side of the dense region is denoted as L 2 ，L＝L 1 +L 2 ，L 1 /L 2 The range of (2) is 0.1 to 0.8.
Preferably, the annular discontinuous groove and the depth H of the annular groove are distributed in a parabolic shape in the radial direction;
establishing a coordinate axis by taking the circle center O of the polishing layer as an origin, the radial direction as an x axis and the direction perpendicular to the plane of the polishing layer as a y axis, wherein a parabolic equation corresponding to the parabolic shape is recorded as y= (Q-S) x 2 /R 2 -U，R 1 ≤x≤R 2 S is the thickness of the polishing layerThe degree, U is 0.01 to 0.2 times of the thickness of the polishing layer, Q is the minimum thickness allowed by the polishing layer, R 1 For the radius of the central region, R 2 A radius outside the connection region; h takes the absolute value of y.
Preferably, the side walls of the annular intermittent groove and the side wall of the annular groove, which are far away from the center of the polishing layer, are in a parabolic arc shape.
Specifically, the peripheral region includes radial linear grooves or curved grooves.
A second aspect of the present invention provides an abrasive apparatus having a polishing pad in contact with a workpiece to be abraded, the polishing pad being provided in the foregoing first aspect.
The invention at least comprises the following beneficial effects:
1. in the invention, the surface of the polishing layer comprises annular grooves which are arranged at intervals and annular discontinuous grooves which are arranged at intervals and are a plurality of concentric circular arc grooves with the same radius, and a novel groove design is provided, so that the polishing liquid has different flow field distribution, and the application of different processes is completed.
2. The annular intermittent grooves and the annular grooves are arranged at intervals, so that the retention time of the polishing liquid and the quantity of the polishing liquid on the polishing layer can be balanced, and a good grinding effect can be realized.
3. The connecting area is divided into a sparse area and a dense area, and the area of the surface of the polishing layer can be adjusted, so that the polishing pad has different polishing effects in the sparse area and the dense area, and the polishing uniformity effect is better.
4. The depths of the annular grooves and the annular discontinuous grooves are arranged in a parabolic arc shape in the radial direction, so that the polishing pad has proper retention time of polishing liquid and proper overflow percentage of the polishing liquid at different radiuses, and the polishing uniformity can be maintained.
5. The side wall of one side of the groove far away from the center of the polishing layer is arranged into a parabolic arc shape, so that overflow of polishing liquid can be facilitated, accumulation of the polishing liquid at the bottom of the groove is avoided, and the grinding effect is improved.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a trench design of a polishing layer according to one embodiment of the present invention;
FIG. 2 is a schematic illustration of a partial trench structure design of the polishing layer of FIG. 1 according to the present invention;
FIG. 3 is a schematic diagram of a trench design of a polishing layer according to another embodiment of the present invention;
FIG. 4 is a schematic diagram of the trench design of a polishing layer according to a preferred embodiment of the present invention;
FIG. 5 is a schematic diagram of a trench design of a polishing layer according to another preferred embodiment of the present invention;
FIG. 6 is a schematic diagram of a trench depth design in accordance with one preferred embodiment of the present invention;
FIG. 7 is a schematic view of the structure of the shape of the trench in one preferred embodiment of the present invention;
FIG. 8 is a schematic diagram of the trench structure of the polishing layer of comparative example 1 of the present invention;
fig. 9 is a schematic diagram of the trench structure of the polishing layer of comparative example 2 of the present invention.
Detailed Description
The present invention provides a polishing pad and an abrasive apparatus, and the present invention will be described with reference to specific embodiments. It should be noted that the terms "center," "outer periphery," "connection," "interval," "ring," "staggered," "downward," "upward," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the invention. Other combinations and various modifications within the spirit of the invention may be made without departing from the spirit or scope of the invention.
< polishing pad >
The polishing pad according to the present invention includes a polishing layer including a central region disposed at the center of the polishing layer, an outer peripheral region disposed at the outer periphery of the polishing layer, and a connection region between the central region and the outer peripheral region.
The polishing layer is the contact surface of the polishing pad and the wafer. In the present invention, the polishing layer has a diameter of 50 to 100cm, preferably 50 to 90cm; the thickness of the polishing layer is 1.1-3.6mm, and the thickness is 1.27mm and 2.032mm more commonly.
Embodiment one
In this embodiment of the present invention, as shown in fig. 1, the polishing pad includes a polishing layer 100, and a central region 11 is provided at a central position of the polishing layer 100, and the central region 11 is a circular blank region formed centering around the center of the surface of the polishing layer 100. Since the center region 11 does not require trimming of the wafer, the center region 11 of the present invention is provided with a smooth surface, and the residence time of the polishing liquid in the center region 11 during the polishing process can be reduced.
The center of the polishing layer 100 is denoted as O, the radius of the polishing layer 100 is denoted as R, and the radius of the central region 11 is denoted as R 1 The ratio of the radius of the central region 11 to the radius of the polishing layer 100 is: r is more than or equal to 0.02 1 R is less than or equal to 0.15. For example, the radius of the central region 11 may be 12.7mm, 17.0mm, 18.0mm, 22.6mm, 24.6mm, 25.4mm, 32.5mm, or 62.7mm.
The connecting area 12 is arranged outside the central area 11 in a surrounding way, the connecting area 12 is a placement area in the wafer grinding process, and grooves arranged in the connecting area 12 are all centered on the center O of the upper surface of the polishing layer 100. The radius outside the connecting region 12 is R 2 The distance l=r from the inside to the outside of the connection region 12 2 -R 1 The ratio of the distance of the connection region 12 to the radius of the polishing layer 100 satisfies the following conditions: the specific ratio in the range of 0.50L/R0.80, preferably 0.65L/R0.80, can be selected according to the size of the polishing pad and the size of the wafer, the diameter of an 8 inch wafer is about 200mm, and the diameter of a 12 inch wafer is about 300mm.
Specifically, in order to balance the residence time of the abrasive particles in the polishing layer 100 and the grooves during polishing, and to increase the flow of the abrasive particles between the grooves, the grooves of the connection region 12 are configured as concentrically spaced annular grooves 121 and annular discontinuous grooves 122. The annular groove 121 maintains the flow of abrasive particles in the slurry within the grooves of the polishing pad under centrifugal force, so that it reduces the accumulation of abrasive particles within the grooves. Under the action of centrifugal force, the annular intermittent grooves 122 can enable the grinding particles to overflow into the annular intermittent grooves 122 to the surface of the polishing layer 100, so that more polishing liquid is provided for the surface, the grinding time is shortened, the defect generation quantity is reduced, and a good grinding effect is achieved. The staggered use of the annular intermittent grooves 122 and the annular grooves 121 can prolong the retention time of the polishing liquid, enable the polishing liquid to overflow to the surface of the polishing layer 100 to perform a grinding function, increase the circulation of the polishing liquid, enable the polishing liquid to be uniformly distributed on the polishing layer 100, and reduce the generation of wafer defects compared with the independent use. In addition to the excellent properties described above, the useful life of the polishing pad can be extended.
In addition, the spacing distance between any two adjacent annular grooves 121 in the radial direction of the polishing layer 100 may be equal or unequal, and any two adjacent annular discontinuous grooves 122 may be equally spaced, regularly or irregularly spaced, or regionally equally spaced, and regionally regularly spaced or irregularly spaced in the radial direction of the polishing layer 100. In this embodiment, there is one annular discontinuous groove 122 between two adjacent annular grooves 121. To increase the uniformity of the distribution of the polishing liquid, the discontinuities of adjacent annular discontinuity grooves 122 are staggered.
In the present embodiment, the annular groove 121 and the annular intermittent groove 122 have the same width, denoted as W, and the groove width W is 0.2 to 1.2mm, preferably 0.25 to 0.8mm, and more preferably 0.30 to 0.58mm. For example, it may be 0.25mm, 0.29mm, 0.30mm, 0.33mm, 0.38mm, 0.39mm, 0.43mm, 0.44mm, 0.46mm, 0.48mm, 0.49mm, 0.53mm, 0.54mm, 0.58mm. The spacing between the circumferential grooves is 1 to 9W, preferably 3 to 8W, more preferably 3.5 to 6.7W. For example, it may be 1.47mm, 1.57mm, 1.72mm, 1.82mm, 2.99mm, or 3.09mm.
As shown in fig. 2, fig. 2 is a partial view of the polishing layer 100, where the partial annular intermittent groove 122 includes four concentric circular arc grooves 122a with the same radius, the central angle α corresponding to the concentric circular arc grooves 122a is 84 degrees, and the central angle β corresponding to the intermittent portion 122b is 6 degrees. It should be noted that the illustration in fig. 2 is not to be construed as limiting the annular intermittent groove 122, and the annular intermittent groove 122 includes three or more concentric circular arc grooves 122a with the same radius. The central angle α corresponding to the concentric arc groove 122a is between 20 and 120 degrees. For example, 35 degrees, 40 degrees, 55 degrees, 80 degrees may be used. The concentric circular arc grooves 122a with the same radius are not connected, the disconnected part forms a discontinuous part 122b, and the central angle beta corresponding to two end points of the discontinuous part 122b is between 5 and 20 degrees. Preferably, the ratio of the central angle corresponding to the concentric arc groove 122a to the central angle corresponding to the discontinuity 122b is 5-8:1.
More specifically, the two adjacent annular grooves 121 are connected to each other at the intermittent position of the annular intermittent groove 122, namely, the connecting groove 123, so that the abrasive particles in the polishing solution move in the connecting grooves and flow out, and the ground fragments can be filled in the grooves of the polishing layer 100 after long-time grinding, so that the fragments can be removed along with the connecting grooves 123. The annular intermittent grooves 122 adjacent to each other are not communicated with each other, and the purpose of the non-communication is to facilitate the flow of the polishing liquid to the surface of the polishing layer 100.
In this embodiment of the present invention, the length m=r—r of the outer peripheral region 13 in the radial direction 2 The ratio of the length of the peripheral region 13 to the radius of the polishing layer 100 is: M/R is more than or equal to 0.01 and less than or equal to 0.20. The peripheral region 13 includes a plurality of radial first linear grooves 131 and second linear grooves 132, the plurality of first linear grooves 131 are uniformly distributed in the circumferential direction, one end of each first linear groove 131 is communicated with the annular groove 121, and the other end extends to the outside of the polishing layer 100. The second linear groove 132 has one end communicating with the annular intermittent groove 122 and the other end extending to the outside of the polishing layer 100. The first linear grooves 131 andthe depth of the second linear groove 132 is the same as the depth of the outermost annular groove 121. In the present embodiment, the depths of all the annular intermittent grooves 122 and the annular grooves 121 are the same. For example, the depth of the first and second linear grooves 131 and 132 may be 0.70mm, 0.72mm, 0.85mm, 0.87mm, 0.88mm, 0.93mm, 0.95mm, 0.97mm, 1.09mm, 1.10mm, 1.12mm, 1.21mm, 1.36mm, 1.44mm, 1.60mm.
Second embodiment
As another embodiment of the present invention, similar to the first embodiment, there may be another way of defining the attachment region 22 of the polishing layer 200 of the polishing pad in connection with the groove pattern design of the present invention.
In this embodiment of the present invention, as shown in fig. 3, for the polishing layer 200 of the polishing pad, a plurality of annular discontinuous grooves 222 are provided between two adjacent annular grooves 221, and the interval between the adjacent annular grooves 221 is at most not more than 0.1 times the radius of the polishing layer 200, and the interval between the annular discontinuous grooves 222 is 1 to 6.5 times the groove width, preferably 2.5 to 5.5 times, and most preferably 3.5 times. The adjacent two annular grooves 221 are communicated with each other from the intermittent position of the annular intermittent groove 222, and the intermittent positions of the annular intermittent grooves 222 in the even-numbered circle area and the odd-numbered circle area formed by the adjacent two annular grooves 221 are staggered. According to the groove design layout, the polishing solution can circulate in the circumferential direction and the radial direction, and the uniform, easy-circulation and easy-maintenance polishing solution flow field layout is achieved.
Embodiment III
As another embodiment of the present invention, the groove pattern design incorporating the present invention is the same as the first embodiment, except that there is a more preferable definition of the connection region 32 for the polishing layer 300 of the polishing pad.
In this embodiment of the present invention, as shown in FIG. 4, the connection region 32 is divided into a sparse region 301 and a dense region 302, the sparse region 301 being located on the side close to the center of the polishing layer 300, the dense region 302 being located on the side away from the center of the polishing layer 300, the distance from the inside to the outside of the sparse region 301 being denoted as L 1 The distance from the inner side to the outer side of the dense region 302 is denoted as L 2 ，L＝L 2 +L 1 ，L 1 /L 2 The range of (2) is 0.1 to 0.8, preferably 0.1 to 0.5. The widths of the grooves are all denoted as W, the spacing distance between the annular discontinuous grooves 322 in the dense region 302 is 2.5W to 4.0W, and the spacing distance between the annular discontinuous grooves 312 in the sparse region 301 is 4.0W to 5.5W. The annular discontinuous grooves in the two areas of the sparse area 301 and the dense area 302 have the same pitch from annular groove to annular groove as the distance between the adjacent two annular discontinuous grooves. The annular discontinuous grooves 312 in the sparse region 301 comprise concentric circular grooves with corresponding central angles alpha 2 70-80 degrees, and the central angle alpha corresponding to the concentric circular arc grooves 322 of the dense region 302 1 30-40 degrees. The connection regions 32 are arranged in stages so that the polishing pad has different polishing effects in the sparse region 301 and the dense region 302, thereby making the polishing uniformity effect better.
Fourth embodiment
As another embodiment of the present invention, similarly to the first embodiment, the grooves for the outer peripheral region 43 of the polishing layer 400 of the polishing pad are more preferably defined in combination with the outer peripheral region 43 of the first embodiment of the present invention.
As shown in fig. 5, the outer peripheral region 43 includes a plurality of radial first curved grooves 431 and second curved grooves 432, the plurality of first curved grooves 431 are uniformly distributed in the circumferential direction, and one end of the first curved groove 431 is communicated with the annular intermittent groove 421, and the other end extends to the outside of the polishing layer 400. The second curved groove 432 has one end communicating with the annular groove 422 and the other end extending outside the polishing layer 400. The first curved groove 431 and the second curved groove 432 have the same depth as the outermost annular break groove 421. In this embodiment, the depths of all the annular break grooves 421 and 422 are the same. For example, the depths of the first curved groove 431 and the second curved groove 432 may be 0.70mm, 0.72mm, 0.85mm, 0.87mm, 0.88mm, 0.93mm, 0.95mm, 0.97mm, 1.10mm, 1.12mm.
Fifth embodiment
As another embodiment of the present invention, similarly to the first embodiment, the grooves of the connection region 52 of the polishing layer 500 of the polishing pad are more preferably defined in combination with the groove pattern of the first embodiment of the present invention.
In the present invention, as the radius increases, the centrifugal force applied to the polishing layer 500 is greater as the polishing layer is closer to the outside, so that the grooves on the inner side of the polishing layer 500 are set to a shallower depth, and the outer side of the polishing layer 500 is set to a deeper depth, so as to prolong the retention time of the polishing liquid on the outer side, not to affect the polishing effect due to rapid removal of the polishing liquid on the outer side, and not to excessively increase the usage amount of the polishing liquid. It has been studied that the depths H of the annular intermittent grooves 522 and 521 are distributed in a parabolic shape in the radial direction due to centrifugal force, as shown in fig. 6, so that the polishing pad has a proper slurry retention time and a proper slurry overflow percentage at different radii, and can maintain polishing uniformity. Establishing a coordinate axis by taking the circle center O of the polishing layer 500 as an origin, taking the radial direction of the polishing layer 500 as an x-axis and taking the direction perpendicular to the plane of the polishing layer 500 as a y-axis, wherein a parabolic equation corresponding to the parabolic shape is recorded as y= (Q-S) x 2 /R 2 -U，R 1 ≤x≤R 2 S is the thickness of the polishing layer, U is 0.01-0.2 times the thickness of the polishing layer, Q is the minimum thickness allowed by the polishing layer, R 1 For the radius of the central region, R 2 A radius outside the connection region 52; h takes the absolute value of y. The minimum thickness allowed for the polishing layer 500 is 0.1 to 0.4 times the thickness of the polishing layer 500.
Embodiment six
As another embodiment of the present invention, similarly to the fifth embodiment, in combination with the groove pattern of the fifth embodiment of the present invention, grooves for the connection region 62 of the polishing layer 600 of the polishing pad are more preferably defined. In the polishing process, as the radius increases, the centrifugal force applied to the polishing layer 600 is greater as the polishing layer approaches the outside, if the cross section of the groove is rectangular or the lower part is elliptical, the polishing particles in the polishing solution will cling to the outer side wall due to the action of the centrifugal force, and are not easy to be discharged from the inside of the groove and accumulated at the bottom of the outer side of the groove. Therefore, according to the stress condition of the grooves, as shown in fig. 7, the side walls of the annular intermittent groove 622 and the annular groove 621 on the side away from the center of the polishing layer 600 are arranged in a parabolic arc shape. The parabolic arc is the left portion of the upwardly convex arc to facilitate the spilling of abrasive particles onto the surface of the polishing layer 600. The larger the parabolic coefficient, the steeper the parabola, and the smaller the parabolic coefficient, the flatter. The parabolic curve of the annular groove 621 may be somewhat flatter than the parabolic curve of the annular discontinuous groove 622, allowing for more advantageous draining of abrasive particles to the surface of the polishing layer 600 when the slurry residence time is balanced. With the increase of polishing time, the grooves having the shape shown in fig. 7 reduce the aggregation of polishing particles, thereby slowing down the glazing of the polishing pad and increasing the service life of the polishing pad.
< preparation of polishing pad >
The polishing pad of the invention comprises a polishing layer and may also comprise a buffer layer. The polishing layer and the buffer layer can be self-made by the following methods, or can be directly purchased as a commercial product. The method of bonding the polishing layer and the buffer layer to each other to prepare the polishing pad is not particularly limited, and there may be mentioned a method of laminating an adhesive layer made of a polyester-based hot-melt adhesive on the buffer layer, melting the adhesive layer by heating with a heater, and then laminating and pressing the polishing layer on the melted adhesive layer.
As the polishing layer, the polishing layer of the invention can be prepared by adopting the known prepolymer method, one-step method and the like, and the method selected by the skilled in the art according to the need does not influence the conception and the protection scope of the invention as long as the polishing layer related to the invention can be prepared.
The polishing layer is made of materials conventionally used in the art, such as polyurethane, which refers to a product derived from difunctional or polyfunctional isocyanate, for example, one or more of polyether urea, polyisocyanurate, polyurethane, polyurea and polyurethane urea, and also a copolymer of two or more of polyether urea, polyisocyanurate, polyurethane, polyurea and polyurethane urea. Preferably, the polyurethane is prepared from an isocyanate-terminated prepolymer obtained by reacting an isocyanate and a polyol and then reacting with a curing agent, or from an isocyanate-terminated prepolymer obtained by reacting an isocyanate and a polyol and then reacting with a mixture of a curing agent and hollow microspheres.
The isocyanate may be, for example, an aromatic isocyanate and/or an aliphatic isocyanate, which are known in the polyurethane field. The isocyanate may be, for example, one or more of an aromatic diisocyanate compound, an aliphatic diisocyanate compound, and an alicyclic diisocyanate compound. The aromatic diisocyanate is preferably one or more of 2, 4-toluene diisocyanate, 2, 6-toluene diisocyanate, 2' -diphenylmethane diisocyanate, 2,4' -diphenylmethane diisocyanate, 4' -diphenylmethane diisocyanate, 1, 5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate, p-phenylene diisocyanate and m-phenylene diisocyanate. The aliphatic diisocyanate is preferably one or more of ethylene diisocyanate, 2, 4-trimethylhexamethylene diisocyanate and 1, 6-hexamethylene diisocyanate. The alicyclic diisocyanate is preferably one or more of 1, 4-cyclohexane diisocyanate, 4' -dicyclohexylmethane diisocyanate, isophorone diisocyanate and norbornane diisocyanate.
The polyol is not particularly limited, and may be any compound known in the polyurethane field, for example, polyether polyol and/or polyester polyol. Preferably, the polyol is one or more of polytetramethylene ether glycol, polyethylene glycol, polypropylene glycol, polybutylene glycol, ethylene adipate and butylene adipate, or a copolymer of two or more of the above six substances.
The prepolymer is preferably of the typeAndone or more of the following.
The curing agent may be, for example, one or more of a polyol, a polyamine and an alcohol amine, which are known in the polyurethane art, and the polyamine may be used, for example, without particular limitation. Preferably, the curing agent is one or more of 4,4 '-methylene-bis-o-chloroaniline, 4' -methylenebis (3-chloro-2, 6-diethylaniline), dimethylthiotoluenediamine, 1, 3-propanediol di-p-aminobenzoate, diethyltoluenediamine, 5-t-amyl-2, 4-and 3-t-amyl-2, 6-toluenediamine and chlorotoluenediamine. More preferably, the curing agent is preferably MOCA which is 3, 3-dichloro-4, 4-diaminodiphenylmethane and/or MCDEA which is 4, 4-methylenebis (3-chloro-2, 6-diethylaniline).
A polishing layer comprising hollow microspheres, the hollow microspheres being uniformly dispersed in the polishing layer. The hollow microspheres have a capsule-like structure of outer walls of polyacrylonitrile or a polyacrylonitrile copolymer. More preferably, the hollow microsphere is of the Expancel series hollow microsphere or the Sorbon microsphere F series. Even more preferably, the hollow microspheres are of the typeThe hollow microsphere polymer is dispersed in the polishing layer, so that the polishing layer finally has the porosity of 10-40%, and the pore diameter is less than 120 mu m; more preferably, the porosity is 15-35%, and the pore diameter is<50μm。
The content of the curing agent and the content of the microspheres control the physical parameters such as different hardness, density, compressibility and the like of the polishing layer through the prepolymer of different components. And pouring the composition into a mold to form a cylinder, slicing the cylinder to obtain a sheet, and grooving the sheet to obtain the polishing layer with the groove pattern, thereby preparing the polishing layer.
Examples of the buffer layer include a fibrous nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric; resin-impregnated nonwoven fabrics such as polyurethane-impregnated polyester nonwoven fabrics; polymer resin foams such as polyurethane foam and polyethylene foam; rubber resins such as butadiene rubber and isoprene rubber; photosensitive resins, and the like.
The density, hardness and compressibility of the buffer layer can be adjusted by using different nonwoven fabrics and polyurethane DMF solutions of different viscosities. After soaking for a period of time, forming and attaching TPU on non-woven fabrics through a solidification tank of DMF with low concentration and solution exchange, then placing into a water washing tank of clean water, washing off solvent, then drying in a tunnel furnace at 150 ℃, forming, and polishing to the required thickness.
< grinding apparatus >
A second aspect of the present invention provides an abrasive apparatus having a polishing pad in contact with a workpiece to be abraded, the polishing pad being provided in the first aspect of the present invention.
The present invention is described in further detail below with reference to examples to enable those skilled in the art to practice the same by referring to the description.
The experimental methods described in the following embodiments are conventional methods unless otherwise indicated, and the reagents and materials are commercially available.
Examples of the invention As shown in Table 1, in these examples of the invention, the radius R of the polishing pad was 387.4mm, the thickness S of the polishing layer was about 2mm, and the radius R of the center region was R 1 Both 32.5mm and the radial length L of the connection region is approximately 309.9mm. The radial length of the sparse zone and the radial length of the dense zone of polishing layer 300 were 92.9mm and 217mm, respectively.
The polishing layer 700 of comparative example 1 is shown in fig. 8, and the polishing layer 800 of comparative example 2 is shown in fig. 9.
TABLE 1
Note that: y=1.066×10 -5 x 2 +0.2, (32.5 mm. Ltoreq.x. Ltoreq. 342.4 mm), u=0.1s, q=0.2s, (1) represents sparse regions, and (2) represents dense regions.
Method for evaluating polishing pad:
the polished wafer was Oxide 10K wafer, the slurry was a silica abrasive slurry D2000E, the flow rate was 120ml/min, the conditioner was a Saeseol C4 diamond disk, the pressure was 5lbf, the polishing head pressure was 4.5psi, the platen speed was 102rpm, and the carrier speed was 108rpm.
Average grinding rate: under the above conditions, a nonmetallic oxide film having a thickness of 1 μm was deposited on a test wafer and polished, and the average polishing rate was determined from the abrasion loss in units of
The defect degree testing method comprises the following steps: defect level is a count of defects on a measurement wafer using an instrument such as a KLA-Tencor SP2 analyzer that counts the average number of defects in 10 wafers.
Polishing rate non-uniformity: the thickness of the polishing object was measured before and after the polishing experiment, respectively. 49 positions were selected in advance on the surface of the object to be polished for measurement, and the polishing rate unevenness of the polished wafer at the time of polishing for 1 hour and after polishing for 10 hours was recorded. The polishing rate unevenness can be calculated from the maximum value (Max) and the minimum value (Min) of the difference between the thicknesses of 49 positions measured before and after the test and the average value of these values, and the calculation formula is: grinding rate non-uniformity = 100 x (Max-Min)/average.
Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown, it is well suited to various fields of use for which the invention is suited, and further modifications may be readily made by one skilled in the art, and the invention is therefore not to be limited to the particular details and examples shown and described herein, without departing from the general concepts defined by the claims and the equivalents thereof.
Claims (10)
1. The chemical mechanical polishing pad is characterized by comprising a polishing layer, wherein the polishing layer comprises a central area arranged in the center of the polishing layer, a peripheral area arranged at the periphery of the polishing layer and a connecting area positioned between the central area and the peripheral area, the connecting area comprises annular grooves and annular discontinuous grooves which are concentrically arranged, one or more annular discontinuous grooves are arranged between two adjacent annular grooves, the discontinuous parts of the annular discontinuous grooves are communicated, and the discontinuous parts of the annular discontinuous grooves in an even-circle area and an odd-circle area formed by the two adjacent annular grooves are staggered.
2. The polishing pad of claim 1, wherein the annular intermittent grooves comprise at least three concentric circular grooves of equal radius.
3. The polishing pad of claim 2, wherein the concentric circular grooves have a corresponding central angle α of between 20 and 120 degrees.
4. The polishing pad of claim 3, wherein the ratio of the central angle corresponding to the concentric circular arc grooves to the central angle corresponding to the break between two adjacent concentric circular arc grooves is 5-8:1.
5. The polishing pad of claim 1, wherein the connection region comprises a sparse region on the inner side and a dense region on the outer side of the sparse region, the annular discontinuous grooves having a width denoted as W, the annular discontinuous grooves within the sparse region being spaced apart by a distance of 4.0W to 5.5W, and the annular discontinuous grooves within the dense region being spaced apart by a distance of 2.5W to 4.0W.
6. The polishing pad of claim 5, wherein the distance between the inner side and the outer side of the sparse zone is denoted as L 1 The distance from the inner side to the outer side of the dense region is denoted as L 2 ，L＝L 1 +L 2 ，L 1 /L 2 The range of (2) is 0.1 to 0.8.
7. The polishing pad of claim 1, wherein the annular intermittent grooves and the depth H of the annular grooves are radially parabolic in shape;
establishing a coordinate axis by taking the center of a circle on the upper surface of the polishing layer as an origin, the radial direction as an x-axis and the direction perpendicular to the plane of the polishing layer as a y-axis, wherein a parabolic equation corresponding to the parabolic shape is recorded as y= (Q-S) x 2 /R 2 -U，R 1 ≤x≤R 2 S is the thickness of the polishing layer, U is 0.01-0.2 times the thickness of the polishing layer, Q is the minimum thickness allowed by the polishing layer, R 1 For the radius of the central region, R 2 A radius outside the connection region; h takes the absolute value of y.
8. The polishing pad of claim 1, wherein the annular intermittent grooves and the side walls of the annular grooves on the side away from the center of the polishing layer are parabolic arcs.
9. The polishing pad of claim 1, wherein the peripheral region comprises radial linear grooves or curvilinear grooves.
10. An abrasive apparatus having a polishing pad in contact with a workpiece to be abraded, the polishing pad being as claimed in any one of claims 1 to 9.
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| CN118404492A (en) * | 2024-07-01 | 2024-07-30 | 万华化学集团电子材料有限公司 | Polishing pad and preparation method and application thereof |
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| CN118404492A (en) * | 2024-07-01 | 2024-07-30 | 万华化学集团电子材料有限公司 | Polishing pad and preparation method and application thereof |
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