CN117558632A - Intelligent power module and preparation method thereof - Google Patents

Intelligent power module and preparation method thereof Download PDF

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Publication number
CN117558632A
CN117558632A CN202311623033.7A CN202311623033A CN117558632A CN 117558632 A CN117558632 A CN 117558632A CN 202311623033 A CN202311623033 A CN 202311623033A CN 117558632 A CN117558632 A CN 117558632A
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CN
China
Prior art keywords
chip
electrode
power module
silver paste
substrate
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Pending
Application number
CN202311623033.7A
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Chinese (zh)
Inventor
杨景城
李正凯
刘剑
谢地林
成章明
周文杰
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Hisense Home Appliances Group Co Ltd
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Hisense Home Appliances Group Co Ltd
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Application filed by Hisense Home Appliances Group Co Ltd filed Critical Hisense Home Appliances Group Co Ltd
Priority to CN202311623033.7A priority Critical patent/CN117558632A/en
Publication of CN117558632A publication Critical patent/CN117558632A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

The invention discloses a preparation method of an intelligent power module and the intelligent power module, wherein the preparation method comprises the following steps: s1, fixing a power chip on a substrate, and fixing a driving chip on a frame; s2, brushing silver paste on a first electrode and a second electrode of the power chip and a substrate, and pre-fixing a conductive piece of the frame with the first electrode, the second electrode and the substrate respectively; s3, carrying out silver sintering on the substrate and the frame to obtain a power module; s4, performing injection molding on the power module to obtain the intelligent power module. According to the preparation method of the intelligent power module, through the steps S1-S4, the aluminum wire welding process can be saved, the phenomena of crater, bonding non-sticking, failure and the like are prevented, the conductive piece is connected with the power chip or the substrate through silver paste, the connection mode is simple, the operation is convenient, and the substrate core mounting step and the frame core mounting step can be synchronously carried out, so that the packaging efficiency of the intelligent power module can be greatly improved.

Description

Intelligent power module and preparation method thereof
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to a preparation method of an intelligent power module and the intelligent power module.
Background
In the related art, in the production process of the intelligent power module, an emitter of the IGBT chip is bonded to an anode of the FRD chip and then bonded to a power pin of the frame by adopting a thick-wire-diameter aluminum wire, and a grid of the IGBT chip is bonded to a control pin of the frame by adopting a thin-wire-diameter aluminum wire, wherein the wire diameter is required to be switched twice, the aluminum wire is more in quantity, extremely time-consuming and low in efficiency, and in the welding process, the risks of a spring pit, non-sticking bonding, failure and the like possibly exist. In addition, the power pins of the existing intelligent power module are required to be welded on the substrate after being bent, and the control pins are required to be bonded with the driving chip, so that the size of the substrate is limited between the control pins and the power pins.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide a method for manufacturing an intelligent power module, which saves the aluminum wire welding process, prevents the occurrence of phenomena such as craters, bonding non-sticking, failure, etc., has a simple connection mode, is convenient to operate, and can greatly improve the packaging efficiency of the intelligent power module.
The invention also aims at providing an intelligent power module prepared by adopting the preparation method.
According to the preparation method of the intelligent power module, the intelligent power module comprises a substrate and a frame, wherein the frame is positioned on one side of the thickness direction of the substrate, a conductive piece is arranged on the frame, and the conductive piece extends along the direction facing the substrate;
the preparation method comprises the following steps:
s1, fixing a power chip on the substrate, and fixing a driving chip on the frame;
s2, brushing silver paste on a first electrode and a second electrode of the power chip and the substrate, wherein the conductive piece of the frame is pre-fixed with the first electrode, the second electrode and the substrate respectively;
s3, carrying out silver sintering on the substrate and the frame to obtain a power module;
s4, performing injection molding on the power module to obtain the intelligent power module.
According to the preparation method of the intelligent power module, compared with the traditional preparation method of the intelligent power module, through the steps S1-S4, the aluminum wire welding process can be saved, the phenomena of crater, bonding non-sticking, failure and the like are prevented, the conductive piece is connected with the power chip or the substrate through silver paste, the connection mode is simple, the operation is convenient, and meanwhile, the substrate core mounting step and the frame core mounting step can be synchronously carried out, so that the packaging efficiency of the intelligent power module can be greatly improved.
According to some embodiments of the invention, the frame includes a base island, a control pin, and a power pin, the driving chip is fixed on the base island, the conductive member includes a first conductive member and a second conductive member, the first conductive member is disposed on the control pin, and the second conductive member is disposed on the power pin; in step S2, the first conductive member is pre-fixed to the second electrode by the silver paste, and the second conductive member is pre-fixed to the first electrode by the silver paste.
According to some embodiments of the invention, the cross-sectional area of the first conductive member is smaller than the cross-sectional area of the second electrode, and the cross-sectional area of the second conductive member is smaller than the cross-sectional area of the first electrode.
According to some embodiments of the invention, the cross-sectional area of the first conductive member is smaller than the cross-sectional area of the second conductive member.
According to some embodiments of the invention, the power chip is an RC-IGBT chip having an emitter and a source, the emitter being the first electrode, the gate being the second electrode, the first conductive member being pre-fixed to the gate by the silver paste, the second conductive member being pre-fixed to the emitter by the silver paste; or the power chip is a MOSFET chip, the MOSFET chip is provided with a source electrode and a grid electrode, the source electrode is the first electrode, the grid electrode is the second electrode, the first conductive piece is pre-fixed with the grid electrode through the silver paste, and the second conductive piece is pre-fixed with the source electrode through the silver paste; or the second conductive piece comprises a first sub conductive piece and a second sub conductive piece, the power chip comprises an IGBT chip and an FRD chip, the first conductive piece is pre-fixed with the grid electrode of the IGBT chip through silver paste, the first sub conductive piece is pre-fixed with the emitter electrode of the IGBT chip through silver paste, and the second sub conductive piece is pre-fixed with the anode electrode of the FRD chip through silver paste respectively.
According to some embodiments of the invention, the conductive element further comprises a third conductive element disposed on the power pin; in step S2, the third conductive member is pre-fixed to the substrate by the silver paste.
According to some embodiments of the invention, step S1 comprises in particular A1 and A2,
a1: brushing the silver paste on the substrate, and fixing the power chip on the substrate through the silver paste; a2, brushing the silver paste on the frame, and fixing the driving chip on the frame through the silver paste.
According to some embodiments of the invention, step A1 specifically comprises:
a11, dividing the circuit layer of the substrate into a plurality of function areas which are distributed at intervals;
a12, brushing the silver paste on the functional area, and pre-fixing the power chip on the functional area through the silver paste;
a13, sintering the substrate and the power chip.
According to some embodiments of the invention, step A2 specifically comprises:
a21, brushing the silver paste on the frame, and pre-fixing the driving chip on the base island through the silver paste;
a22, sintering the frame and the driving chip;
a23, bonding wires, wherein the driving chip is connected with the control pins of the frame through conductive wires.
According to some embodiments of the invention, step a21 is preceded by:
a20, the conductive piece is connected with the frame through an ultrasonic welding mode, a solder paste welding mode or the silver paste.
According to the second aspect of the invention, the intelligent power module is prepared by adopting the preparation method of the intelligent power module according to the first aspect of the invention.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a flow chart of a method of manufacturing a smart power module according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a framework of a smart power module according to an embodiment of the invention;
FIG. 3 is a top view of a frame of the smart power module shown in FIG. 2;
FIG. 4 is a side view of a frame of the smart power module shown in FIG. 2;
FIG. 5 is a schematic diagram of a power module of a smart power module according to an embodiment of the present invention;
FIG. 6 is a top view of a power module of the smart power module shown in FIG. 5;
FIG. 7 is a schematic diagram of a smart power module according to an embodiment of the invention;
FIG. 8 is a schematic diagram of another angle of a smart power module according to an embodiment of the present invention;
FIG. 9 is a cross-sectional view of a smart power module according to an embodiment of the present invention;
fig. 10 is a schematic diagram of a substrate and a power chip of a smart power module according to an embodiment of the invention.
Reference numerals:
100: an intelligent power module;
110: a power module; 10: a substrate; 101: a functional area; 20: a frame; 201: a base island; 202: a control pin; 2021: a first pin segment; 2022: a second pin segment; 203: a power pin; 2031: a third pin segment; 2032: a fourth pin segment; 30: a power chip; 301: a first electrode; 302: a second electrode; 303: an IGBT chip; 304: an FRD chip; 3041: an anode; 40: a driving chip; 401: a low voltage driving chip; 402: a high voltage driving chip; 404: a bootstrap diode; 50: a conductive member; 501: a first conductive member; 502: a second conductive member; 5021: a first sub-conductive member; 5022: a second sub-conductive member; 503: a third conductive member; 60: and (5) plastic packaging the shell.
Detailed Description
A method for manufacturing the intelligent power module 100 according to an embodiment of the first aspect of the present invention will be described with reference to fig. 1 to 10
As shown in fig. 2 to 10, the smart power module 100 includes a substrate 10 and a frame 20, the frame 20 being located at one side of the thickness direction (e.g., left-right direction in fig. 8) of the substrate 10, and the frame 20 being provided with a conductive member 50, the conductive member 50 extending in a direction toward the substrate 10. The conductive member 50 is located at a side of the frame 20 adjacent to the substrate 10 for connection of the frame 20 and the power chip 30 on the substrate 10.
As shown in fig. 1, a method for manufacturing an intelligent power module 100 according to an embodiment of the first aspect of the present invention includes the following steps:
s1, fixing the power chip 30 on the substrate 10, and fixing the driving chip 40 on the frame 20. That is, the substrate 10 and the frame 20 can be performed simultaneously, and the substrate 10 and the frame 20 can be performed without interference, so that the core loading efficiency can be improved, and the packaging efficiency of the intelligent power module 100 can be improved.
S2, coating silver paste on the first electrode 301 and the second electrode 302 of the power chip 30 and the substrate 10, and pre-fixing the conductive piece 50 of the frame 20 with the first electrode 301, the second electrode 302 and the substrate 10 respectively. In this step, the power chip 30 can be electrically connected to the frame 20 through the conductive member 50, and the frame 20 can be electrically connected to the substrate 10 through the conductive member 50. Since the conductive member 50 is located between the frame 20 and the substrate 10, the conductive member 50 is used for conducting electricity and simultaneously can play a supporting role to support the frame 20 above the substrate 10.
And S3, performing silver sintering on the substrate 10 and the frame 20 to obtain the power module 110. By curing the silver paste in this step, it is ensured that the conductive member 50 can be reliably connected to the first electrode 301, the second electrode 302, and the substrate 10.
S4, performing injection molding on the power module 110 to obtain the intelligent power module 100. Thus, the substrate 10, the power chip 30, the driving chip 40 and the partial frame 20 are positioned in the plastic package case 60, so that the chip and the substrate 10 can be effectively isolated from the outside, and the chip and the substrate 10 are prevented from being impacted by the external environment. Alternatively, the plastic package case 60 may be made of an epoxy material, but is not limited thereto.
Optionally, the substrate 10 may be a ceramic copper-clad plate, where the ceramic copper-clad plate includes a first copper layer (circuit layer) 102, a ceramic layer 103 (insulating layer) and a second copper layer 104 arranged along a thickness direction, the power chip 30 is connected with the first copper layer 102, a side surface of the second copper layer 104 far away from the power chip 30 is flush with a bottom surface of the plastic package shell 60 and exposed outside the plastic package shell 60, when the power chip 30 works to generate heat, the heat can be transferred to the second copper layer 104 through the first copper layer 102 and the ceramic layer 103, and the second copper layer 104 exchanges heat with the outside to realize heat dissipation of the intelligent power module 100.
According to the preparation method of the intelligent power module 100 in the embodiment of the invention, compared with the traditional preparation method of the intelligent power module, through the steps S1-S4, the aluminum wire welding process can be saved, the phenomena of crater, bonding non-sticking, failure and the like are prevented, the conductive piece 50 is connected with the power chip 30 or the substrate 10 through silver paste, the connection mode is simple, the operation is convenient, and simultaneously the core loading step of the substrate 10 and the core loading step of the frame 20 can be synchronously performed, so that the packaging efficiency of the intelligent power module 100 can be greatly improved.
According to some embodiments of the present invention, as shown in fig. 2-6, the frame 20 includes a base 201, a control pin 202, and a power pin 203, the driving chip 40 is fixed on the base 201, the conductive member 50 includes a first conductive member 501 and a second conductive member 502, the first conductive member 501 is disposed on the control pin 202, and the second conductive member 502 is disposed on the power pin 203.
For example, in the examples of fig. 2 to 6, both sides in the width direction (for example, up-down direction in fig. 6) of the substrate 10 are a control side and a power side, respectively, the control pins 202 are arranged on the control side of the substrate 10, and the power pins 203 are arranged on the power side of the substrate 10. The number of the islands 201 is seven, the seven islands 201 are spaced apart along the length direction (for example, the left-right direction in fig. 6) of the substrate 10, the driving chip 40 includes one low-voltage driving chip 401, three high-voltage driving chips 402, and three bootstrap diodes 404, the low-voltage driving chip 401 is disposed on the outermost island 201 among the seven islands 201, and the low-voltage driving chip 401 may be connected with the control pins 202 through gold wires or copper wires. The high voltage driving chip 402 and the bootstrap diode 404 are connected to the control pin 202 through gold wires or copper wires, and three high voltage driving chips 402 and three bootstrap diodes 404 are respectively provided on the remaining six islands 201. Of course, the control pin 202 may be connected to the low voltage driver chip 401, the high voltage driver chip 402, and the bootstrap diode 404 by other materials with low resistivity.
The first conductive member 501 and the second conductive member 502 are plural, and in the description of the present invention, "plural" means two or more. The first conductive member 501 is provided on one side in the thickness direction of the control pin 202 for connection to the power chip 30. The second conductive member 502 is provided on one side in the thickness direction of the power pin 203.
In step S2, the first conductive member 501 is pre-fixed to the second electrode 302 by silver paste, and the second conductive member 502 is pre-fixed to the first electrode 301 by silver paste. Therefore, the relative positions of the control pin 202 and the power pin 203 and the power chip 30 are determined, the reliable connection of the control pin 202 and the power pin 203 and the power chip 30 can be realized through sintering, the steps are simple, and the operation is convenient.
Referring to fig. 5 and 7, each control pin 202 includes a first pin segment 2021 and a second pin segment 2022 connected to each other, the second pin segment 2022 is perpendicular to the first pin segment 2021 and located on a side of the first pin segment 2021 away from the substrate 10, the first pin segment 2021 is located in the plastic package housing 60, and the second pin segment 2022 is located outside the plastic package housing 60. Likewise, each power pin 203 includes a third pin segment 2031 and a fourth pin segment 2032 connected to each other, the fourth pin segment 2032 being perpendicular to the third pin segment 2031 and on a side of the third pin segment 2031 remote from the substrate 10, the third pin segment 2031 being located inside the plastic housing 60, the fourth pin segment 2032 being located outside the plastic housing 60.
The side surface of the first lead segment 2021 away from the substrate 10, the side surface of the third lead segment 2031 away from the substrate 10, and the side surface of the island 201 away from the substrate 10 are flush in the thickness direction of the substrate 10. Therefore, the size of the substrate 10 is not limited between the control pins 202 and the power pins 203, and two sides of the substrate 10 in the width direction in the application can be extended to the edge of the plastic package housing 60, so that the size of the substrate 10 is increased, and the heat dissipation efficiency of the intelligent power module 100 can be improved.
According to some embodiments of the invention, the cross-sectional area of the first conductive element 501 is smaller than the cross-sectional area of the second electrode 302. By doing so, while ensuring that the first conductive member 501 can be connected to the second electrode 302, the first conductive member 501 is prevented from being connected to other positions of the power chip 30 through silver paste, so that occurrence of a short circuit can be prevented.
Likewise, the cross-sectional area of the second conductive member 502 is smaller than the cross-sectional area of the first electrode 301. By this arrangement, while ensuring that the second conductive member 502 can be connected to the first electrode 301, the second conductive member 502 is prevented from being connected to other positions of the power chip 30 through silver paste, so that occurrence of a short circuit can be prevented.
Further, the cross-sectional area of the first conductive member 501 is smaller than the cross-sectional area of the second conductive member 502. Since the size of the second electrode 302 on the power chip 30 is smaller than the size of the first electrode 301, by making the cross-sectional area of the first conductive member 501 smaller than the cross-sectional area of the second conductive member 502, the size of the first conductive member 501 can be adapted to the size of the second electrode 302, the size of the second conductive member 502 can be adapted to the size of the first electrode 301, and the space between the first electrode 301 and the second electrode 302 is smaller, and the cross-sectional area of the first conductive member 501 is smaller, so that the connection of the first conductive member 501 to the first electrode 301 can be avoided.
According to some embodiments of the present invention, as shown in fig. 5, 6 and 10, the power chip 30 is an RC-IGBT (reverse conducting insulated gate bipolar transistor) chip having an emitter and a gate, the emitter being a first electrode 301, the gate being a second electrode 302, the first conductive member 501 being pre-fixed to the gate by silver paste, the second conductive member 502 being pre-fixed to the emitter by silver paste. Alternatively, the power chip 30 is a MOSFET (metal oxide semiconductor field effect transistor) chip (not shown), the MOSFET chip has a source and a gate, the source is the first electrode 301, the gate is the second electrode 302, the first conductive member 501 is pre-fixed to the gate by silver paste, and the second conductive member 502 is pre-fixed to the source by silver paste.
Alternatively, the second conductive member 502 includes a first sub conductive member 5021 and a second sub conductive member 5022, the power chip 30 includes an IGBT (insulated gate bipolar transistor) chip 303 and an FRD (fast recovery diode) chip 304, the first conductive member 501 is pre-fixed to the gate of the IGBT chip 303 by silver paste, the first sub conductive member 5021 is pre-fixed to the emitter of the IGBT chip 303 by silver paste, and the second sub conductive member 5022 is pre-fixed to the anode 3041 of the FRD chip 304 by silver paste, respectively. As shown in fig. 6, the IGBT chip 303 and the FRD chip 304 are spaced apart in the width direction of the substrate 10, the IGBT chip 303 is disposed adjacent to the control pin 202, the FRD chip 304 is disposed adjacent to the power pin 203, the first and second sub-conductors 5021 and 5022 on the power pin 30 are also spaced apart in the width direction of the substrate 10, the first sub-conductor 5021 is electrically connected with the emitter of the IGBT chip 303, and the second sub-conductor 5022 is electrically connected with the anode 3041 of the FRD chip 304 to realize the electrical connection of the IGBT chip 303 and the FRD chip 304.
In this way, the types of the power chips 30 can be selected according to the use situations of the intelligent power module 100, the intelligent power module 100 has more various structures, and the intelligent power module 100 has more applicable situations.
In some alternative embodiments, the conductive element 50 further includes a third conductive element 503, the third conductive element 503 being disposed on the power pin 203. In step S2, the third conductive member 503 is pre-fixed with the substrate 10 by silver paste.
Referring to fig. 2 and 3, the number of the third conductive members 503 is four, the four third conductive members 503 are respectively disposed on the four power pins 203, and the four third conductive members 503 are disposed adjacent to the edge of the substrate 10, the power pins 203 may be connected with the substrate 10 through the third conductive members 503, and meanwhile, the third conductive members 503 may cooperate with the second conductive members 502 to effectively support the power pins 203, so as to avoid bending of the power pins 203.
According to some embodiments of the invention, as shown in fig. 1, step S1 specifically includes A1 and A2,
a1: brushing silver paste on the substrate 10, and fixing the power chip 30 on the substrate 10 through the silver paste;
a2, brushing silver paste on the frame 20, and fixing the driving chip 40 on the frame 20 through the silver paste.
By such arrangement, the thermal resistance of the power chip 30 and the driving chip 40 can be reduced while the power chip 30 is fixed on the substrate 10 and the driving chip 40 is fixed on the frame 20, so that the energy consumption of the intelligent power module 100 can be reduced, and the excessive temperature of the intelligent power module 100 after long-time use can be avoided.
According to some embodiments of the invention, as shown in fig. 1, the step A1 specifically includes:
a11, dividing the circuit layer of the substrate 10 into a plurality of functional areas 101 which are arranged at intervals. For example, the first copper layer 102 of the substrate 10 is divided into four functional areas 101, the four functional areas 101 are spaced apart along the length direction of the substrate 10, the four functional areas 101 are sequentially a first area, a second area, a third area and a fourth area along the length direction of the substrate 10, one power chip 30 is disposed in each of the first area, the second area and the third area, three power chips 30 are disposed in the fourth area, and the three power chips 30 are spaced apart along the length direction of the substrate 10.
A12, brushing silver paste on the functional area 101, and pre-fixing the power chip 30 on the functional area 101 through the silver paste;
a13, sintering the substrate 10 and the power chip 30.
Thus, by the steps a11 to a13, the plurality of power chips 30 can be fixed in the plurality of functional areas 101, respectively, and the connection reliability between the substrate 10 and the power chips 30 is ensured.
According to some embodiments of the invention, step A2 specifically comprises:
a21, brushing silver paste on the frame 20, and pre-fixing the driving chip 40 on the base island 201 through the silver paste;
a22, sintering the frame 20 and the driving chip 40;
a23, bonding wires, the driving chip 40 is connected to the control pins 202 of the frame 20 through conductive wires.
Thus, through the steps a21 to a23, the plurality of driving chips 40 can be fixed on the plurality of islands 201 of the frame 20, respectively, so that the connection reliability between the islands 201 and the driving chips 40 is ensured, and the driving chips 40 can be electrically connected with the corresponding control pins 202. The driving chip 40 can be bonded with the corresponding control pin 202 through an aluminum wire with a small wire diameter.
According to some embodiments of the invention, step a21 is preceded by:
a20, the conductive member 50 is connected with the frame 20 by ultrasonic welding, solder paste welding or silver paste. By this step, the conductive member 50 is integrally connected with the frame 20, which facilitates the connection of the subsequent conductive member 50 with the power chip 30.
Alternatively, the frame 20 and the conductive member 50 may be made of copper material. But is not limited thereto.
As shown in fig. 6 to 8, according to the second aspect of the present invention, the smart power module 100 is manufactured by using the manufacturing method of the smart power module 100 according to the first aspect of the present invention.
According to the intelligent power module 100 provided by the embodiment of the invention, the through-flow capacity and the heat dissipation effect of the intelligent power module 100 can be improved, and the energy consumption of the intelligent power module 100 can be reduced by adopting the preparation method.
Other configurations and operations of the intelligent power module 100 according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description of the present invention, it should be understood that the terms "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships that are based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present application, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "electrically conductive" are to be construed broadly, and may be, for example, either fixedly conductive, detachably conductive, or integrally conductive; can be mechanically conductive or electrically conductive; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.

Claims (11)

1. The preparation method of the intelligent power module is characterized in that the intelligent power module comprises a substrate and a frame, wherein the frame is positioned at one side of the thickness direction of the substrate, a conductive piece is arranged on the frame, and the conductive piece extends along the direction facing the substrate;
the preparation method comprises the following steps:
s1, fixing a power chip on the substrate, and fixing a driving chip on the frame;
s2, brushing silver paste on a first electrode and a second electrode of the power chip and the substrate, wherein the conductive piece of the frame is pre-fixed with the first electrode, the second electrode and the substrate respectively;
s3, carrying out silver sintering on the substrate and the frame to obtain a power module;
s4, performing injection molding on the power module to obtain the intelligent power module.
2. The method for manufacturing an intelligent power module according to claim 1, wherein the frame comprises a base island, a control pin and a power pin, the driving chip is fixed on the base island, the conductive member comprises a first conductive member and a second conductive member, the first conductive member is arranged on the control pin, and the second conductive member is arranged on the power pin;
in step S2, the first conductive member is pre-fixed to the second electrode by the silver paste, and the second conductive member is pre-fixed to the first electrode by the silver paste.
3. The method of manufacturing a smart power module as recited in claim 2, wherein the cross-sectional area of the first conductive member is smaller than the cross-sectional area of the second electrode, and
the cross-sectional area of the second conductive member is smaller than the cross-sectional area of the first electrode.
4. The method of claim 3, wherein the cross-sectional area of the first conductive member is smaller than the cross-sectional area of the second conductive member.
5. The method for manufacturing an intelligent power module according to claim 2, wherein the power chip is an RC-IGBT chip having an emitter and a gate, the emitter being the first electrode, the gate being the second electrode, the first conductive member being pre-fixed to the gate by the silver paste, the second conductive member being pre-fixed to the emitter by the silver paste; or (b)
The power chip is a MOSFET chip, the MOSFET chip is provided with a source electrode and a grid electrode, the source electrode is the first electrode, the grid electrode is the second electrode, the first conductive piece is pre-fixed with the grid electrode through the silver paste, and the second conductive piece is pre-fixed with the source electrode through the silver paste; or (b)
The power chip comprises an IGBT chip and an FRD chip, the first conductive piece is pre-fixed with a grid electrode of the IGBT chip through silver paste, the first conductive piece is pre-fixed with an emitter electrode of the IGBT chip through silver paste, and the second conductive piece is pre-fixed with an anode electrode of the FRD chip through silver paste.
6. The method for manufacturing an intelligent power module according to claim 1, wherein the conductive member further comprises a third conductive member, the third conductive member being disposed on the power pin;
in step S2, the third conductive member is pre-fixed to the substrate by the silver paste.
7. The method for manufacturing an intelligent power module according to any one of claims 1 to 6, wherein step S1 comprises A1 and A2,
a1: brushing the silver paste on the substrate, and fixing the power chip on the substrate through the silver paste;
a2, brushing the silver paste on the frame, and fixing the driving chip on the frame through the silver paste.
8. The method for manufacturing an intelligent power module according to claim 7, wherein the step A1 specifically includes:
a11, dividing the circuit layer of the substrate into a plurality of function areas which are distributed at intervals;
a12, brushing the silver paste on the functional area, and pre-fixing the power chip on the functional area through the silver paste;
a13, sintering the substrate and the power chip.
9. The method for manufacturing an intelligent power module according to claim 7, wherein step A2 specifically comprises:
a21, brushing the silver paste on the frame, and pre-fixing the driving chip on the base island through the silver paste;
a22, sintering the frame and the driving chip;
a23, bonding wires are used for conducting wire bonding between the driving chip and the control pins of the frame.
10. The method for manufacturing an intelligent power module according to claim 9, further comprising, before step a 21:
a20, the conductive piece is connected with the frame through an ultrasonic welding mode, a solder paste welding mode or the silver paste.
11. An intelligent power module, characterized in that it is manufactured by the manufacturing method of the intelligent power module according to any one of claims 1-10.
CN202311623033.7A 2023-11-29 2023-11-29 Intelligent power module and preparation method thereof Pending CN117558632A (en)

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Application Number Priority Date Filing Date Title
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200266129A1 (en) * 2019-02-15 2020-08-20 Fuji Electric Co., Ltd. Semiconductor module and semiconductor module manufacturing method
CN113394114A (en) * 2020-03-11 2021-09-14 珠海零边界集成电路有限公司 Chip packaging method, chip and electronic device
CN116798967A (en) * 2022-03-20 2023-09-22 上海沛塬电子有限公司 High-frequency high-power packaging module, manufacturing method of module and hybrid substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200266129A1 (en) * 2019-02-15 2020-08-20 Fuji Electric Co., Ltd. Semiconductor module and semiconductor module manufacturing method
CN113394114A (en) * 2020-03-11 2021-09-14 珠海零边界集成电路有限公司 Chip packaging method, chip and electronic device
CN116798967A (en) * 2022-03-20 2023-09-22 上海沛塬电子有限公司 High-frequency high-power packaging module, manufacturing method of module and hybrid substrate

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