CN117175347B - Semiconductor laser - Google Patents
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- CN117175347B CN117175347B CN202311120961.1A CN202311120961A CN117175347B CN 117175347 B CN117175347 B CN 117175347B CN 202311120961 A CN202311120961 A CN 202311120961A CN 117175347 B CN117175347 B CN 117175347B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
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- 239000000203 mixture Substances 0.000 claims description 19
- 230000003247 decreasing effect Effects 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
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- 229910052751 metal Inorganic materials 0.000 claims description 9
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- 239000010432 diamond Substances 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 3
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 description 22
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- 239000000969 carrier Substances 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a semiconductor laser which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and a p-type contact layer, wherein the substrate, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the upper limiting layer and the p-type contact layer are sequentially arranged from bottom to top, and the p-type contact layer is provided with Mg doping concentration distribution, al component distribution, in component distribution, si doping concentration distribution, C content concentration distribution, H content concentration distribution and O content concentration distribution. According to the invention, the Mg doping concentration distribution, the Al component distribution, the In component distribution, the Si doping concentration distribution, the C content concentration distribution, the H content concentration distribution and the O content concentration distribution are designed In the p-type contact layer of the semiconductor laser, so that the hole ionization efficiency and the hole concentration of the p-type contact layer of the semiconductor laser can be greatly improved, the contact resistance and the series resistance are reduced, the voltage of the laser is reduced, the voltage stability between Run and Run is improved, the voltage is reduced from 7.5V to below 4.5V, and the discontinuous or abrupt change phenomenon of junction voltage jump is solved.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm 2, which is higher than that of the nitride light-emitting diode by more than 2 orders of magnitude, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation Droop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems: the p-type semiconductor has large Mg acceptor activation energy and low ionization efficiency, the hole concentration is far lower than the electron concentration, and the hole mobility is far lower than the electron mobility, so that the p-type contact layer has high resistivity, the voltage directly contacted with metal (non-transparent oxide layer) is high, the voltage is unstable, and the discontinuous or abrupt change phenomenon of junction voltage jump easily occurs.
Disclosure of Invention
In order to solve one of the above technical problems, the present invention provides a semiconductor laser.
The embodiment of the invention provides a semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and a p-type contact layer, wherein the substrate, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the upper limiting layer and the p-type contact layer are sequentially arranged from bottom to top, and the p-type contact layer is provided with Mg doping concentration distribution, al component distribution, in component distribution, si doping concentration distribution, C content concentration distribution, H content concentration distribution and O content concentration distribution.
Preferably, the Mg doping concentration distribution of the p-type contact layer is exponentially distributed, y=a X, 0 < a < 1;
the Al component distribution of the p-type contact layer is in two-section linear function distribution, wherein the slope of a first section linear function close to the upper limiting layer direction is smaller than that of a second section linear function close to the p-type contact layer direction;
The In component distribution of the p-type contact layer is In inverted V-shaped distribution;
The Si doping concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=b X, wherein a is more than 0 and less than 1;
The H content concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=c X, wherein a is more than 0 and less than 1;
the O content concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=d X, wherein a is more than 0 and less than 1;
The C content concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=e X, 0 < a < 1.
Preferably, the base number relationship of the exponential function distribution of the Mg doping concentration distribution, the Si doping concentration distribution, the C content concentration distribution, the H content concentration distribution and the O content concentration distribution of the p-type contact layer is: b.gtoreq.c.gtoreq.e.gtoreq.d.gtoreq.a.
Preferably, the Mg doping concentration of the p-type contact layer is in a decreasing trend towards the upper limiting layer;
the peak position of the In component of the p-type contact layer is In a descending trend towards the upper limiting layer;
the Si doping concentration of the p-type contact layer is in a descending trend towards the upper limiting layer;
The O content concentration of the p-type contact layer is in a descending trend towards the upper limiting layer;
the H content concentration of the p-type contact layer is in a descending trend towards the upper limiting layer;
the concentration of C content of the p-type contact layer is in a descending trend towards the upper limiting layer;
the Al component concentration of the p-type contact layer is in a decreasing trend towards the surface direction of the p-type contact layer.
Preferably, the angle of decrease of Mg doping concentration of the p-type contact layer is α: alpha is more than or equal to 90 degrees and more than or equal to 40 degrees;
the decreasing angle of the peak position of the In component of the p-type contact layer is theta: 85 DEG or more, theta or more than 35 DEG;
the decreasing angle of the Si doping concentration of the p-type contact layer is delta: the delta is more than or equal to 70 degrees and is more than or equal to 25 degrees;
the angle of decrease of the O content concentration of the p-type contact layer is beta: beta is more than or equal to 80 degrees and more than or equal to 35 degrees;
The H content concentration of the p-type contact layer is reduced by an angle of
The decreasing angle of the C content concentration of the p-type contact layer is phi 65 degrees or more and phi 20 degrees or more;
the decreasing angle of the Al component concentration of the p-type contact layer is gamma: 60 degrees or more and gamma is or more than 15 degrees.
Preferably, the angle relation of variation of Mg doping concentration, al composition, in composition, si doping concentration, C content concentration, H content concentration and O content concentration of the p-type contact layer is:
Preferably, the Mg doping concentration of the p-type contact layer decreases from 5E19cm -3 to 1E22cm -3 to 1E18cm -3 to 5E19cm -3 toward the active layer;
The Si doping concentration of the p-type contact layer is reduced from 1E19cm -3 to 5E20cm -3 to 5E17cm -3 to 1E19cm -3 towards the active layer;
the H content concentration of the p-type contact layer is reduced from 5E19cm -3 to 1E21cm -3 to 1E18cm -3 to 5E19cm -3 towards the active layer;
The O content concentration of the p-type contact layer is reduced from 1E19cm -3 to 1E21cm -3 to 5E17cm -3 to 5E18cm -3 towards the active layer;
The C content concentration of the p-type contact layer is reduced from 1E18cm -3 to 1E19cm -3 to 1E17cm -3 to 1E18cm -3 towards the active layer.
Preferably, the p-type contact layer is any one or any combination of AlInGaN, alGaN, inGaN, gaN a and the thickness of the p-type contact layer is 5 a to 1000 a.
Preferably, a metal electrode layer is disposed on the p-type contact layer, and the metal electrode layer is any one or any combination of Pd, au, ni, cr, pt, al, ti, cu, W, rh, nb.
Preferably, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer and the upper confinement layer comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、BN、 diamond;
The substrate comprises any one of sapphire, silicon, ge, siC, BN, diamond, mo, cu, tiW, cuW, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: according to the invention, the Mg doping concentration distribution, the Al component distribution, the In component distribution, the Si doping concentration distribution, the C content concentration distribution, the H content concentration distribution and the O content concentration distribution are designed In the p-type contact layer of the semiconductor laser, so that the hole ionization efficiency and the hole concentration of the p-type contact layer of the semiconductor laser can be greatly improved, the contact resistance and the series resistance are reduced, the voltage of the laser is reduced, the voltage stability between Run and Run is improved, the voltage is reduced from 7.5V to below 4.5V, and the discontinuous or abrupt change phenomenon of junction voltage jump is solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser according to an embodiment of the present invention;
Fig. 3 is a partial SIMS secondary ion mass spectrum of a semiconductor laser according to an embodiment of the present invention.
Reference numerals:
100. A substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an upper confinement layer, 106, a p-type contact layer, 107, a metal electrode layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 to 3, the present embodiment proposes a semiconductor laser element having a non-reciprocal topology laser oscillation layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an upper confinement layer 105, and a p-type contact layer 106, which are disposed in this order from bottom to top. Among them, in the p-type contact layer 106, it has Mg doping concentration distribution, al composition distribution, in composition distribution, si doping concentration distribution, C content concentration distribution, H content concentration distribution, and O content concentration distribution.
Specifically, in the present embodiment, the semiconductor laser is provided with the substrate 100, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the upper confinement layer 105, and the p-type contact layer 106 in this order from bottom to top. The p-type contact layer 106 is uppermost. The p-type contact layer 106 has a thickness of 5 to 1000 a m, any one or any combination of AlInGaN, alGaN, inGaN, gaN a. The p-type contact layer 106 has a specific Mg doping concentration distribution, al composition distribution, in composition distribution, si doping concentration distribution, C content concentration distribution, H content concentration distribution, and O content concentration distribution therein, and is specifically expressed as follows:
mg doping concentration profile:
The Mg doping concentration profile of the p-type contact layer 106 is exponentially distributed, y=a X, 0 < a < 1;
distribution of Al component:
The Al component distribution of the p-type contact layer 106 is in a two-section linear function distribution, wherein the slope of the first section linear function in the direction close to the upper limiting layer 105 is smaller than that of the second section linear function in the direction close to the p-type contact layer 106;
In composition distribution:
The In composition distribution of the p-type contact layer 106 is In an inverted V-shaped distribution;
si doping concentration profile:
The Si doping concentration profile of the p-type contact layer 106 is exponentially distributed, y=b X, 0 < a < 1;
H content concentration distribution:
The concentration distribution of H content of the p-type contact layer 106 is distributed in an exponential function, and Y=c X, 0 < a < 1;
distribution of O content concentration:
the O content concentration profile of the p-type contact layer 106 is exponentially distributed, y=d X, 0 < a < 1;
C content concentration distribution:
The C content concentration profile of the p-type contact layer 106 is exponentially distributed, y=e X, 0 < a < 1.
In the p-type contact layer 106, mg doping concentration distribution, si doping concentration distribution, C content concentration distribution, H content concentration distribution, and O content concentration distribution are all exponentially distributed, but the base of their exponential functions has the following relationship: b.gtoreq.c.gtoreq.e.gtoreq.d.gtoreq.a.
Further, in the p-type contact layer 106, in addition to the characteristics possessed by the Mg doping concentration distribution, the Al composition distribution, the In composition distribution, the Si doping concentration distribution, the C content concentration distribution, the H content concentration distribution, and the O content concentration distribution described above, the Mg doping concentration distribution, the Al composition distribution, the In composition distribution, the Si doping concentration distribution, the C content concentration distribution, the H content concentration distribution, and the O content concentration distribution have the following characteristics:
mg doping concentration profile:
The Mg doping concentration of the p-type contact layer 106 tends to decrease toward the upper confinement layer 105;
distribution of Al component:
the Al component concentration of the p-type contact layer 106 tends to decrease toward the surface of the p-type contact layer 106;
In composition distribution:
the peak position of the In component of the p-type contact layer 106 tends to decrease toward the upper confinement layer 105;
si doping concentration profile:
the Si doping concentration of the p-type contact layer 106 tends to decrease toward the upper confinement layer 105;
H content concentration distribution:
The H content concentration of the p-type contact layer 106 tends to decrease toward the upper confinement layer 105;
distribution of O content concentration:
The O content concentration of the p-type contact layer 106 tends to decrease toward the upper confinement layer 105;
C content concentration distribution:
the C content concentration of the p-type contact layer 106 tends to decrease toward the upper confinement layer 105.
Wherein, the Mg doping concentration, al component, in component, si doping concentration, C content concentration, H content concentration and O content concentration also have the specific angle changes In the descending process, specifically:
the angle of decrease in Mg doping concentration of the p-type contact layer 106 is α: alpha is more than or equal to 90 degrees and more than or equal to 40 degrees;
the peak position of the In component of the p-type contact layer 106 falls by an angle θ:85 DEG or more, theta or more than 35 DEG;
the p-type contact layer 106 has a Si doping concentration decrease angle δ: the delta is more than or equal to 70 degrees and is more than or equal to 25 degrees;
The angle of decrease in the O content concentration of the p-type contact layer 106 is β: beta is more than or equal to 80 degrees and more than or equal to 35 degrees;
The H content concentration of the p-type contact layer 106 decreases by an angle of
The C content concentration of the p-type contact layer 106 is reduced by an angle phi of more than or equal to 65 DEG and more than or equal to 20 DEG;
The p-type contact layer 106 has an Al component concentration falling at an angle γ:60 degrees or more and gamma is or more than 15 degrees.
Meanwhile, the angles of variation of Mg doping concentration, al composition, in composition, si doping concentration, C content concentration, H content concentration, and O content concentration also have the following relationship:
According to the embodiment, the Mg doping concentration distribution, the Al component distribution, the In component distribution, the Si doping concentration distribution, the C content concentration distribution, the H content concentration distribution and the O content concentration distribution of the specific p-type contact layer 106 and the change angles of the Mg doping concentration, the Al component, the In component, the Si doping concentration, the C content concentration, the H content concentration and the O content concentration are designed, so that the hole ionization efficiency and the hole concentration of the p-type contact layer 106 of the semiconductor laser are greatly improved, the contact resistance and the series resistance are reduced, the voltage of the laser is reduced, the voltage stability between Run and Run is improved, and the voltage is reduced from 7.5V to below 4.5V, thereby solving the discontinuous or abrupt change phenomenon of junction voltage jump.
Further, in the present embodiment, the Mg doping concentration of the p-type contact layer 106 decreases from 5E19cm -3 to 1E22cm -3 to 1E18cm -3 to 5E19cm -3 toward the active layer 103;
The Si doping concentration of the p-type contact layer 106 decreases from 1E19cm -3 to 5E20cm -3 to 5E17cm -3 to 1E19cm -3 toward the active layer 103;
The H content concentration of the p-type contact layer 106 decreases from 5E19cm -3 to 1E21cm -3 to 1E18cm -3 to 5E19cm -3 toward the active layer 103;
The O content concentration of the p-type contact layer 106 decreases from 1E19cm -3 to 1E21cm -3 to 5E17cm -3 to 5E18cm -3 toward the active layer 103;
The C content concentration of the p-type contact layer 106 decreases from 1E18cm -3 to 1E19cm -3 to 1E17cm -3 to 1E18cm -3 toward the active layer 103.
Further, in the present embodiment, a metal electrode layer 107 is disposed on the p-type contact layer 106. The p-type contact layer 106 is in direct contact with the metal electrode layer 107, and a transparent conductive layer (such as ITO, GZO, IZO, IGZO, ga 2O3 and a ZnO transparent conductive layer) is not arranged in the middle, so that the structure of the semiconductor laser is simplified, and the structure of the semiconductor laser is more compact. The metal electrode layer 107 may be any one or any combination of Pd, au, ni, cr, pt, al, ti, cu, W, rh, nb.
In this embodiment, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, and the upper confinement layer 105 of the semiconductor laser include any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、BN、 diamond.
In this embodiment, the substrate 100 of the semiconductor laser includes any one of sapphire, silicon, ge, siC, BN, diamond, mo, cu, tiW, cuW, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate 100, a sapphire/AlN composite substrate 100, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate 100.
The following table shows the comparison of the performance parameters of the semiconductor laser proposed in this embodiment and the conventional semiconductor laser:
It can be seen that the threshold voltage of the semiconductor laser proposed in this embodiment is reduced from 6.5V to 4.5V, the external quantum efficiency is increased from 31.5% to 48.5%, and the threshold current density is reduced from 2.4kA/cm 2 to 0.65kA/cm 2. The hole ionization efficiency and hole concentration of the p-type contact layer 106 of the semiconductor laser can be greatly improved, the contact resistance and series resistance are reduced, the voltage of the laser is reduced, the voltage stability between Run and Run is improved, and the discontinuous or abrupt change phenomenon of junction voltage jump is solved.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (8)
1. A nitride semiconductor laser comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper confinement layer and a p-type contact layer which are arranged In sequence from bottom to top, wherein the p-type contact layer is provided with a Mg doping concentration distribution, an Al composition distribution, an In composition distribution, a Si doping concentration distribution, a C content concentration distribution, an H content concentration distribution and an O content concentration distribution;
The Mg doping concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=a X, wherein a is more than 0 and less than 1;
the Al component distribution of the p-type contact layer is in two-section linear function distribution, wherein the slope of a first section linear function close to the upper limiting layer direction is smaller than that of a second section linear function close to the p-type contact layer direction;
The In component distribution of the p-type contact layer is In inverted V-shaped distribution;
The Si doping concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=b X, wherein b is more than 0 and less than 1;
The H content concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=c X, wherein c is more than 0 and less than 1;
the O content concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=d X, wherein d is more than 0 and less than 1;
the C content concentration distribution of the p-type contact layer is distributed in an exponential function, and Y=e X, wherein e is more than 0 and less than 1.
2. The nitride semiconductor laser according to claim 1, characterized in that the Mg doping concentration of the p-type contact layer is in a decreasing trend toward the upper confinement layer;
the peak position of the In component of the p-type contact layer is In a descending trend towards the upper limiting layer;
the Si doping concentration of the p-type contact layer is in a descending trend towards the upper limiting layer;
The O content concentration of the p-type contact layer is in a descending trend towards the upper limiting layer;
the H content concentration of the p-type contact layer is in a descending trend towards the upper limiting layer;
the concentration of C content of the p-type contact layer is in a descending trend towards the upper limiting layer;
the Al component concentration of the p-type contact layer is in a decreasing trend towards the surface direction of the p-type contact layer.
3. The nitride semiconductor laser according to claim 2, characterized in that the angle of decrease of Mg doping concentration of the p-type contact layer is α: alpha is more than or equal to 90 degrees and more than or equal to 40 degrees;
the decreasing angle of the peak position of the In component of the p-type contact layer is theta: 85 DEG or more, theta or more than 35 DEG;
the decreasing angle of the Si doping concentration of the p-type contact layer is delta: the delta is more than or equal to 70 degrees and is more than or equal to 25 degrees;
the angle of decrease of the O content concentration of the p-type contact layer is beta: beta is more than or equal to 80 degrees and more than or equal to 35 degrees;
The decreasing angle of the H content concentration of the p-type contact layer is phi: the phi is more than or equal to 30 degrees and is more than or equal to 75 degrees;
The decreasing angle of the C content concentration of the p-type contact layer is phi 65 degrees or more and phi 20 degrees or more;
The decreasing angle of the Al component concentration of the p-type contact layer is gamma: 60 degrees or more and gamma is or more than 15 degrees.
4. The nitride semiconductor laser according to claim 3, wherein the p-type contact layer has a change angle relationship of Mg doping concentration, al composition, in composition, si doping concentration, C content concentration, H content concentration, and O content concentration of: alpha is more than or equal to theta is more than or equal to beta is more than or equal to phi is more than or equal to delta is more than or equal to phi is more than or equal to gamma.
5. The nitride semiconductor laser according to claim 1, characterized in that the Mg doping concentration of the p-type contact layer decreases from 5E19cm -3 to 1E22cm -3 to 1E18cm -3 to 5E19cm -3 toward the active layer;
The Si doping concentration of the p-type contact layer is reduced from 1E19cm -3 to 5E20cm -3 to 5E17cm -3 to 1E19cm -3 towards the active layer;
the H content concentration of the p-type contact layer is reduced from 5E19cm -3 to 1E21cm -3 to 1E18cm -3 to 5E19cm -3 towards the active layer;
The O content concentration of the p-type contact layer is reduced from 1E19cm -3 to 1E21cm -3 to 5E17cm -3 to 5E18cm -3 towards the active layer;
The C content concentration of the p-type contact layer is reduced from 1E18cm -3 to 1E19cm -3 to 1E17cm -3 to 1E18cm -3 towards the active layer.
6. The nitride semiconductor laser according to claim 1, characterized in that the thickness of the p-type contact layer is 5 to 1000 a.
7. The nitride semiconductor laser according to claim 1, characterized in that a metal electrode layer is provided on the p-type contact layer, the metal electrode layer being any one or any combination of Pd, au, ni, cr, pt, al, ti, cu, W, rh, nb.
8. The nitride semiconductor laser according to claim 1, wherein the lower confinement layer, lower waveguide layer, active layer, upper waveguide layer, upper confinement layer comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP;
The substrate comprises any one of sapphire, silicon, ge, siC, BN, diamond, mo, cu, tiW, cuW, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
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