CN116665751B

CN116665751B - Test method and electronic equipment

Info

Publication number: CN116665751B
Application number: CN202211621424.0A
Authority: CN
Inventors: 程雪涛; 沙贝; 李玮; 孙岩宾
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2022-12-16
Filing date: 2022-12-16
Publication date: 2024-04-02
Anticipated expiration: 2042-12-16
Also published as: CN116665751A

Abstract

The method for testing the memory of the electronic equipment performs more severe aging test on the memory of the electronic equipment through a plurality of image files with different versions, so that memory particles with poor quality can be forced to display quality defects as early as possible in the aging test process, manufacturers can conveniently screen and reject the memory particles with poor quality before selling the products, the failure rate of the electronic equipment in the use process of users after being sold is reduced, and the probability of returning the electronic equipment to the goods by the users after being sold is also reduced.

Description

Test method and electronic equipment

Technical Field

The application relates to the technical field of terminals, in particular to a testing method and electronic equipment.

Background

The memory in electronic devices such as mobile phones and computers is composed of a plurality of memory particles, and if any memory particle has a quality problem, the stability of the memory is affected. When memory products are produced, some particles with poor quality are inevitably mixed in some products, and if the memory particles are not screened out, blue screen halt of electronic equipment in the subsequent use process is likely to occur.

The particles in the memory are currently typically screened and rejected by means of burn-in testing. The traditional aging test is to perform simple test by using a test program running on a main board at normal temperature before the memory product leaves a factory. However, this aging test method only can test the real-time status of the memory particles, and the memory particles with poor quality will generally show problems gradually after 1-3 months of use. Therefore, the existing aging test method has poor identification effect on memory particles with poor quality, which can certainly increase the failure rate of equipment in the use process and increase the probability of the equipment being returned by users after being sold.

Therefore, a test method with better identification effect on the memory particles with poor quality needs to be studied.

Disclosure of Invention

The invention aims to provide a testing method and electronic equipment, wherein the testing method performs more severe aging test on a memory of the electronic equipment through a plurality of image files with different versions, so that memory particles with poor quality can be forced to display quality defects as early as possible in the aging test process, a manufacturer can conveniently screen and reject the memory particles with poor quality before selling products, the failure rate of the electronic equipment in the use process of a user after being sold is reduced, and the probability of returning the electronic equipment to the market by the user after being sold is also reduced.

The above and other objects are achieved by the features of the independent claims. Further implementations are presented in the dependent claims, the description and the figures.

In a first aspect, the present application provides a test method comprising: determining a first storage partition from at least two storage partitions according to the test requirement of a user, wherein the voltage values configured by mirror files in any two storage partitions in the at least two storage partitions for storage media are different; and brushing the first image file in the first storage partition to a target storage partition, and performing aging test on the storage medium based on the first image file in the target storage partition.

The aging test is to conduct simulation operation test on the product in a targeted manner before the product leaves the factory, and has the significance of screening and removing the products or parts with weak constitution and easy aging, thereby improving the overall quality and stability of the product. For most of the conventional markets of electronic devices, the burn-in test of the memory in the device is generally performed simply by using the motherboard to run the test program at normal temperature. The conventional burn-in test is generally performed under the default working voltage of the storage medium, and the test method only can test the real-time state of the memory particles, but the memory particles with poor quality gradually show problems after being used for 1-3 months, so that the memory particles with poor quality are likely to be unable to be screened and removed in the process of the burn-in test.

In the method, the image files in the at least two memory partitions can provide different working voltages for the memory of the electronic device, wherein the different working voltages comprise limit test voltage values which are obviously higher and/or lower than conventional voltage values, so that more severe aging test is carried out on memory particles in the memory (e.g. DDR), poor-quality memory particles can be forced to show quality defects as early as possible in the aging test process, namely, poor-quality memory particles can be caused to fail in an early aging period rather than be caused to occur in a few months after being used by customers, so that manufacturers can screen and reject the poor-quality memory particles before selling products, the failure rate of the electronic device in the use process of the users after being sold is reduced, and the probability that the electronic device is returned to the customers after being sold is reduced.

With reference to the first aspect, in a possible implementation manner, the at least two memory partitions include the first memory partition; the first image file in the first storage partition is configured to configure VDDQ of the storage medium to a first limit low voltage, and configure VDD2 of the storage medium to a second limit low voltage, where the first limit low voltage is smaller than a first voltage and a difference value between the first voltage and the second limit low voltage is larger than a first threshold, and the second limit low voltage is smaller than a second voltage and a difference value between the second voltage and the second voltage value is larger than the first threshold, the first voltage is a rated voltage corresponding to VDDQ of the storage medium, and the second voltage is a rated voltage corresponding to VDD2 of the storage medium.

It can be understood that, on the premise of ensuring that the storage medium can maintain the working state, the voltage with larger difference from the default voltage value is used for testing during the aging test, and the better the filtering effect on the memory particles with poor quality is. Therefore, in this embodiment, the first image file in the first storage partition is used to configure the storage medium to a voltage value that is different from the rated operating voltage value of the storage medium by a larger amount, so that the quality performance of the memory product can be further improved.

With reference to the first aspect, in one possible implementation manner, the at least two memory partitions further include a second memory partition, where a second image file in the second memory partition is used to configure VDDQ of the storage medium to a first limit high voltage, and configure VDD2 of the storage medium to a second limit high voltage, where the first limit high voltage is greater than a first voltage and a difference from the first voltage value is greater than a second threshold, and the second limit high voltage is greater than a second voltage and a difference from the second voltage value is greater than the second threshold, and the first voltage is a rated voltage corresponding to VDDQ of the storage medium, and the second voltage is a rated voltage corresponding to VDD2 of the storage medium.

It is understood that both high pressure and low pressure environments may cause accelerated aging of poor quality memory particles in the storage medium. Therefore, in this embodiment, the second image file in the second storage partition may provide a testing environment with a high limit voltage for the storage medium, and when the user has a high requirement on the performance of the storage medium, the user may specifically select to use the testing environment with the low limit voltage and the high limit voltage to perform the aging test on the storage medium respectively.

With reference to the first aspect, in one possible implementation manner, the determining, according to a test requirement of a user, a first storage partition from at least two storage partitions includes: displaying a first user interface, wherein the first user interface comprises at least two voltage value options, the at least two voltage value options correspond to the at least two storage partitions, the at least two voltage value options comprise a first voltage option, and the first voltage option corresponds to the first storage partition; and responding to the user operation of the first voltage option, and determining the first storage partition corresponding to the first voltage option.

In this embodiment, the electronic device may display the aging test voltage items provided by the image files in each of the at least two storage partitions through a visual user interface, and the user may select a corresponding voltage item according to the test requirement and the product requirement to perform the aging test. Specifically, the electronic device may store a mapping table, where the mapping table records a name or a storage address of an image file corresponding to each voltage option (for example, an array xbl _addr is set according to the voltage configuration options (0 x 1-low voltage, 0x 2-normal, 0x 3-high voltage), and a corresponding low voltage, normal, and high voltage partition name is obtained in the array xbl _addr); when a user clicks a certain voltage item, the electronic device can query the storage address of the image file corresponding to the voltage item, after the image file is acquired based on the storage address, the read image file is written into the target partition according to the partition name using command, and after the writing is completed, a reboot restarting command is sent, so that the electronic device can use the image file to complete relevant configuration of a test environment required by the aging test, and the configuration comprises the step of configuring the working voltage of the memory as a voltage value corresponding to the image file.

With reference to the first aspect, in one possible implementation manner, the flushing the first image file stored in the first storage partition to the target storage partition, performing an aging test on the storage medium based on the first image file in the target storage partition includes: brushing a first image file stored in the first storage partition to a target storage partition; after restarting the electronic equipment, configuring the working voltage of the storage medium into a voltage value corresponding to the first image file according to the first image file in the target storage partition; and under the condition that the working voltage of the storage medium is the voltage value corresponding to the first image file, detecting the performance of each memory particle in the storage medium to obtain an aging test result.

It will be appreciated that for memories, the yield of memory granules is an important reference indicator reflecting how good the overall performance of the memory is. Therefore, in the embodiment, the qualification rate of the memory particles is used as the performance index of the aging test, so that the overall performance of the memory can be accurately judged, and the memory particles with poor quality can be screened out.

Further optionally, in this embodiment, after the burn-in test is started, the user may observe a progress process of the burn-in test in the first user interface and terminate the process of the burn-in test at any time.

In a second aspect, the present application provides a method for adjusting an operating voltage of a storage medium, where the method is applied to an electronic device, a first storage partition and at least one second storage partition exist in a storage medium of the electronic device, a first image file in the first storage partition is used to configure the operating voltage of the storage medium to a rated operating voltage, an image file in any one of the at least one second storage partition is used to update the operating voltage of the storage medium, and an operating voltage corresponding to the image file in any one of the at least one second storage partition is different from the rated operating voltage, where the method includes: displaying a second user interface under the condition that the electronic equipment is restarted due to the abnormal storage medium, wherein the second user interface comprises at least one voltage option, and the at least one voltage value option corresponds to the at least one second storage partition; and responding to the user operation of the user on a first voltage option in the at least one voltage option, determining a storage partition corresponding to the first voltage option, and adjusting the working voltage of the storage medium based on the image file in the storage partition corresponding to the first voltage option.

In the method, a plurality of storage partitions are arranged in a storage medium (namely a memory) in the electronic equipment, and the voltage values configured for the storage medium by the image files in any two storage partitions are different. The image files in any one of the memory partitions may provide the electronic device with all the contents for running the burn-in test program, such as instruction code, libraries when running the program, environment variables, and configuration files. When the electronic equipment is shut down due to abnormal storage media, the electronic equipment can utilize the image files in the storage partitions to change the working voltage of the memory of the electronic equipment so as to improve the stability of the electronic equipment in the subsequent use process of a user.

Specifically, before the electronic device is restarted, recording an abnormal error type before restarting the electronic device; for example PANIC, AOP, DDR, TZ, where "DDR" means that the electronic device is restarted because of a storage medium anomaly. If the electronic device recognizes that the cause of the abnormal restart is related to the abnormal memory, the electronic device may output a prompt message to ask the user if he agrees to attempt to change the voltage of the storage medium to improve the operation condition of the electronic device. And if the user agrees, changing the working voltage of the storage medium by utilizing the image files in the storage partitions.

In a third aspect, the present application provides a test system, where the test system includes a first terminal and a second terminal, the first terminal is provided with an aging test program, the aging test program includes an initial configuration file, the initial configuration file is used to provide at least one initial voltage option for a storage medium of the first terminal in an aging test process, the second terminal is used to obtain the initial configuration file in the first terminal, and update the initial configuration file according to a test requirement of a user to obtain a target configuration file, and the target configuration file includes at least one target voltage option; the first terminal is used for acquiring the target configuration file, and after updating the configuration file of the aging test program into the target configuration file, performing aging test on the storage medium based on the aging test program.

It will be appreciated that image files are typically stored in memory partitions that are likely to have partition signatures in order to ensure that the files they store cannot be tampered with by a person. That is, once the image files in each storage partition are stored in the corresponding partition, it may not be easy or even possible for the user to edit the image files in those partitions. However, during the burn-in process of the memory product, the voltage values of the image files in each memory partition that can be configured for the memory may not meet the requirements of the user. Therefore, in the test system, the test system may include a first terminal and a second terminal, where the test terminal stores a burn-in test program, where the burn-in test program may be used for performing a burn-in test on a memory, where the burn-in test program includes a configuration file, where the configuration file is an XML file or an XBL file for controlling program set binding, and may redirect an application program from one version using a parallel program set to another version of the same program set, where the configuration file is generally stored in the same location where an application program list is located, for example, in a "/user" folder of the test terminal, where the configuration file may be easily obtained by a user, and is received by the second terminal, and re-stored in the burn-in test program of the test terminal after re-writing a voltage item required for the burn-in test on the re-in terminal, so that the user may change a voltage value used for the burn-in test according to his own test requirement, which may be beneficial to efficiently performing the burn-in test, and saving an operation cost of the burn-in test.

In a fourth aspect, an embodiment of the present application provides an electronic device, including: one or more processors and memory; the memory is coupled with the one or more processors, the memory for storing computer program code comprising computer instructions that the one or more processors call to cause the electronic device to perform the method as in the first aspect or any possible implementation of the first aspect, or as in the second aspect.

In a fifth aspect, there is provided a chip system for application to an electronic device, the chip system comprising one or more processors for invoking computer instructions to cause the electronic device to perform the method as in the first aspect or any possible implementation of the first aspect, or the method as in the second aspect.

In a sixth aspect, a computer readable storage medium is provided, comprising instructions which, when run on an electronic device, cause the electronic device to perform the method as in the first aspect or any possible implementation of the first aspect, or the method as in the second aspect.

Drawings

FIG. 1 is a schematic diagram of a memory partition according to an embodiment of the present application;

FIG. 2 is a schematic content diagram of a storage medium according to an embodiment of the present disclosure;

FIG. 3 is a schematic content diagram of a storage medium according to an embodiment of the present disclosure;

FIG. 4 is a block diagram of a test system according to an embodiment of the present disclosure;

FIGS. 5-7 are some of the user interface diagrams provided by embodiments of the present application;

fig. 8 is a schematic diagram of an electronic device according to an embodiment of the present application;

FIG. 9 is a flow chart of a testing method according to an embodiment of the present application;

FIG. 10 is a flowchart of a method for adjusting an operating voltage of a storage medium according to an embodiment of the present application.

Detailed Description

The terminology used in the following embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the specification and the appended claims, the singular forms "a," "an," "the," and "the" are intended to include the plural forms as well, unless the context clearly indicates to the contrary. It should also be understood that the term "and/or" as used in this application refers to and encompasses any or all possible combinations of one or more of the listed items.

Since the embodiments of the present application relate to the application of neural networks, for ease of understanding, the following description will refer to related terms.

(1) Double rate synchronous dynamic random access memory

Double rate synchronous dynamic random access memory (DDR SDRAM), which is simply referred to as DDR, is a storage medium developed on the basis of SDRAM memory. Almost every electronic device, from a smart phone to a server, uses some form of RAM memory. Although flash NAND continues to prevail (due to the popularity of a wide variety of consumer electronics products), SDRAM remains the dominant memory technology for most computers and computer-based products because SDRAM provides a very good combination of speed and storage for relatively low cost per bit. DDR is a double data rate SDRAM memory that has become the memory technology of choice today. DDR technology is continually evolving, increasing speed and capacity, while reducing costs, power and physical size of memory devices.

Compared with SDRAM, DDR uses more advanced synchronous circuit, so that the main steps of the designated address, data transmission and output are independently executed and kept completely synchronous with CPU; DDR uses DLL (Delay Locked Loop ) technology, where the memory controller can use this data filtered signal to pinpoint the data, once every 16 outputs, and resynchronize the data from different memory modules when the data is valid. DDR essentially doubles the speed of SDRAM without increasing the clock frequency, which allows data to be read on the rising and falling edges of the clock pulses, thus doubling the speed of standard SDRAM. For memory manufacturers, only the equipment for manufacturing the common SDRAM is slightly improved, so that the DDR memory can be produced, and the cost can be effectively reduced.

(2) Aging

With the increase of the service cycle and the continuous operation time, a large amount of data exchange of the memory can cause the temperature of memory particles to rise rapidly when the memory is used, and the long-term dust accumulation can prevent heat from being quickly emitted, so that the memory particles in the memory can be gradually damaged, the performance of the memory can be reduced, and the process is an aging process of the memory; in addition, the aging process is particularly rapid for some poor quality memory particles. There are two end results of memory particle aging: 1. the memory performance is reduced, and once the electronic equipment operates at a high frequency, the blue screen dead phenomenon is easy to occur; 2. when the system and software use memory particles damaged by aging, prompts such as program errors, read-write errors and the like can occur.

(3) Memory partitioning

A storage partition (hereinafter simply referred to as a "partition") is a portion of a physical disk that acts as the same physical partition unit. A partition is typically referred to as a main partition or an extended partition. For operating systems based on UNIX or similar to Unix like Linux, partition systems create/,/boot,/home,/tmp,/usr,/var,/opt, and swap partitions. This ensures that if one of the file systems is corrupted, the other data (the other file system) is unaffected, thus reducing data loss. One disadvantage of this is that the whole drive is divided into small partitions of fixed size, e.g. one user may fill up/home partitions and run out of available hard disk space, even though there is sufficient free space on other partitions.

(4) Mirror image file

Mirror image files (Mirroring) are a form of file storage, i.e. a specific series of files are made into a single file according to a certain format, so as to be convenient for users to download and use. The most important feature of the data on one disk is that it can be identified by specific software and written directly to the disk.

In general, when a user needs to start up different versions of image files, it is usually necessary to erase the image files stored in the original storage partition by means of an external device erasable programmable logic device, then store the image files of the replaced version in the original storage partition, and finally restart the system to complete the replacement.

In the application, the electronic device can perform the burn-in test on the electronic device by using different versions of image files, and the different versions of the image files can provide test environments with different voltage values for the burn-in test process of the memory. It will be appreciated that different quality memory particles are also resistant to voltage to a different extent, for example, for poor quality memory particles, a low or high voltage environment may greatly accelerate their degree of aging compared to conventional voltages. Therefore, in the application, the aging test environments with different voltage values are provided for the DDR through the image files with different versions, so that the memory particles in the DDR can be screened more pertinently, the identification rate of the memory particles with poor quality is further improved, and the failure rate of the equipment in the use process is reduced.

(5) Drain supply voltage (virtual device driver, VDD)

In this application, VDD may represent a supply voltage of a virtual device driving a north bridge chip or a supply voltage of an input buffer and core logic of a memory chip. Numbered VDD, for example (VDD 1, VDD 2), represent voltages of different magnitudes or voltages that are isolated from each other. VDDQ represents the output buffered supply voltage of the memory chip, and generally VDDQ is a power supply that requires filtering, and has a higher stability requirement than VDD.

In the process of using electronic equipment such as a computer and a mobile phone in daily life, a user may encounter the phenomenon that the computer or the mobile phone frequently starts to crash due to the aging of the particle constitution of the memory in the equipment.

It will be appreciated that a memory is made up of a plurality of memory particles, and any one of them presents a quality problem that affects the stability of the memory. In particular, some memory products produced by counterfeit or variegated memory manufacturers select particles with poor quality when purchased, and effective quality test on each memory particle is not guaranteed when the memory is produced, so that the quality of the same memory particle is uneven, and the hidden danger is buried for the subsequent blue screen crash.

Such an internal presence does not present any problem at the beginning of use and allows normal operation of the equipment system and associated software. However, with the increase of the service cycle and the continuous operation time, a large amount of data exchange during the use of the memory can cause the rapid rise of the temperature of memory particles, and the long-term dust accumulation can not quickly emit heat, so that some IC particles with poor quality are easily aged, even heat damage of the IC particles is caused, finally the performance of the memory is reduced, and the blue screen crash phenomenon is easily generated once the memory is operated at a high frequency. In addition, when the system and software use particles which are damaged by heat, the system and software may have prompts such as program errors, read-write errors and the like, and the stability of the electronic equipment is seriously affected.

Therefore, in order to ensure stability of the electronic device during use by a user, a strict burn-in test is required before the electronic device or the memory product is shipped. The aging test is to conduct simulation operation test on the product in a targeted manner before the product leaves the factory, and has the significance of screening and removing the products or parts with weak constitution and easy aging, thereby improving the overall quality and stability of the product. However, in the DDR memory world, such burn-in test methods are limited to the most threshold-level memory or industry with higher specifications due to excessive cost of labor, hardware and time (4000 tens of thousands of cents per DBT burn-in tester). For most of the conventional markets of electronic devices, the burn-in TEST of the MEMORY in the device is generally performed simply by using only a motherboard to run a TEST program (e.g., r.s.t. or MEMORY TEST) at normal temperature.

It will be appreciated that the above-described test program may be stored in the form of program code in the electronic device to be tested, and that the test procedure generally needs to be completed by means of an image file. In the conventional burn-in process, the electronic device generally performs the burn-in test on the inner particle by using a fixed version of the image file. Fig. 1 is a schematic diagram of a storage partition provided in an embodiment of the present application, as shown in fig. 1, where the default storage partition in fig. 1 may be a default storage partition of an electronic device that facilitates a storage medium 01, and a default image file is stored in the default storage partition, where the default image file is an image file used for an aging test. In particular, the default image file may provide the electronic device with all of the content for running the burn-in test program described above, including instruction code, libraries at the time of running the program, environment variables, and configuration files. It should be understood that, for a fixed image file, the index of the test environment provided for the burn-in process on each parameter is also fixed, that is, for each burn-in test, the temperature value, the voltage value and the current value provided by the electronic device for the memory based on the default image file are all the same; in the conventional burn-in process, the voltage value configured by the memory granule by the default image file is the voltage value required by the memory granule during actual operation, i.e. the default voltage shown in fig. 1.

However, with the conventional burn-in method, only the real-time state of the memory particles can be tested, and the memory particles with poor quality are characterized by gradually showing problems after 1-3 months of use, so that the memory particles with poor quality are likely to not be screened and removed in the process of burn-in test, and always exist in a memory (e.g. DDR) and are sold to users along with the delivery of the electronic device, which is why some consumers find the reason that the product performance gradually declines or even cannot be used after 1-3 months of use. If the memory particles with poor quality cannot be screened and removed at first, the failure rate of the electronic device in the use process is likely to be increased, and the probability of returning the device to the user after the device is sold is also increased.

Accordingly, the present application provides a testing method and an electronic device, where the testing method provides a limit test voltage value (for example, the voltage values corresponding to VDD2 and VDDQ of the memory are set to be much higher and/or much lower than a default value during an aging test) for a memory of the electronic device through a plurality of image files of different versions, so as to perform a more severe aging test on memory particles in the memory (for example, DDR), and force the memory particles with poor quality to manifest quality defects as early as possible during the aging test, so that the memory particles with poor quality can appear in the early aging period instead of a few months after the use of the customer, so that manufacturers can screen and reject the memory particles with poor quality before the sale of the product, so as to reduce the failure rate of the electronic device during the use of the customer after the sale, and also reduce the probability of the electronic device being returned by the customer after the sale.

Reference is first made to multi-version image files involved in implementing the test methods provided herein and to storage media for storing these image files.

Fig. 2 is a schematic content diagram of a storage medium provided in the present application. Included in the storage medium are a plurality of storage partitions, including storage partition 20-storage partition 23. Wherein: the storage partition 21-storage partition 23 is used for storing multiple versions of image files (i.e. image file 201-image file 203), and each storage partition stores only one image file, and the image files can be any one of iso, bin, img, tao, gho and other formats, which are not limited in this application; the storage partition 20 may also be called a default storage partition, and when performing the burn-in test, the electronic device may select a corresponding image file (i.e. one of the image files 201-203) from the storage partition 21-storage partition 23 according to the test requirement, and write the image file into the storage partition 20, where any image file may provide the electronic device with all contents for running the burn-in test program, such as instruction codes, libraries when running the program, environment variables, and configuration files. Specific:

Stored in memory partition 21 is image file 201, which may be used to configure the operating voltage of the memory to a default voltage; it should be understood that, the voltage value corresponding to the "default voltage" is the rated operating voltage value of the memory, and the voltage value is uniformly specified when the memory is designed and produced. For example, for most DDR, the default values of VDDQ and VDD2 are 600mV and 1128mV, respectively, and the corresponding values of the default voltages are set to vddq=600 mV and vdd2=1128 mV. When performing the burn-in test for the electronic device, the electronic device may write the image file 201 to the memory partition 20, and then, based on the image file 201, may provide the same voltage value as the voltage value corresponding to the default voltage to the memory in the electronic device.

Stored in storage partition 22 is image file 202, which may be used to configure the operating voltage of the memory to a very low voltage; it should be understood that the term "extreme low voltage" is used herein to refer to a voltage value that is less than the default voltage, but still maintains the memory and electronic devices in normal operation and the burn-in test process. Specifically, the difference between the voltage value corresponding to the extreme low voltage and the voltage value corresponding to the default voltage may be set to be greater than a certain threshold (e.g., 50 mV), so that when the aging test is performed on the memory by means of the low voltage environment, the performance defect of the memory particles with poor quality may be more easily exposed as early as possible, so as to screen out the memory particles with poor quality. As can be seen from the foregoing description, for most DDRs, the default values of VDDQ and VDD2 are 600mV and 1128mV, respectively, and the voltage values corresponding to the above-mentioned extreme low voltages can be set to vddq=540 mV and vdd2=1016 mV, or can be set to other values according to the user's requirements, which is not limited in this application. Similarly, when the electronic device is subjected to burn-in testing, after the electronic device has written the image file 202 to the memory partition 20, the electronic device can provide the same voltage value as the above-mentioned extreme low voltage to the memory in the electronic device based on the image file 202.

Stored in memory partition 23 is image file 203, which may be used to configure the operating voltage of the memory to an extreme high voltage; similarly, the "limit high voltage" is a voltage value that is greater than the default voltage, but still maintains the normal operation of the memory and the electronic device and the normal performance of the burn-in test process. The difference between the voltage value corresponding to the limit high voltage and the voltage value corresponding to the default voltage may be set to be greater than a certain threshold (for example, 50 mV), specifically, the voltage value corresponding to the limit high voltage may be set to vddq=660 mV and vdd2=1240 mV, or may be set to other values according to the user's requirement, which is not limited in this application. Similarly, when the electronic device is subjected to burn-in testing, after the electronic device can write the image file 203 to the memory partition 20, the electronic device can provide the same voltage value as the above-mentioned extreme low voltage to the memory in the electronic device based on the image file 203.

It should be noted that, when performing the aging test on the memory, the electronic device may call the image files (i.e. image file 201-image file 203) in the corresponding storage partition (i.e. storage partition 21-storage partition 23) according to the specific requirements and operations of the user; the specific process of the electronic device for retrieving the image file in the corresponding storage partition under the operation of the user may refer to the related description of the subsequent embodiment, which is not described herein. After the image file is written to the storage partition 20, the electronic device can not only supply the memory particles with the corresponding voltages based on the image file, but also supply the electronic device with, for example, instruction codes, libraries at the time of running the program, environment variables, and configuration files necessary for running the burn-in program during the burn-in test.

In addition, in a specific aging test process, since the performance levels of the memory particles may be different under the environments of different voltages, the electronic device may brush the image files 201 to 203 into the storage partition 20 under the operation of the user, and perform multiple aging tests on the memory by using different voltage values, so as to ensure that the memory particles with poor quality in the memory can be more accurately selected. Of course, in order to save time and cost, the electronic device may also select only one or more image files from the image files 201-203 to complete the aging test of the memory, for example, only perform the aging test on the memory in the environment of a low limit voltage, or only perform the aging test on the memory in the environment of a high limit voltage. Accordingly, in an alternative embodiment, the storage medium 02 provided in the embodiment of the present application may only include any one of the storage partition 22 or the storage partition 23, and in addition to the image file 201, only any one of the image file 202 or the image file 203 may be stored in the storage medium 02.

It should be appreciated that the memory partition 20 may not store any image files prior to the initial execution of the burn-in program in the electronic device. After the electronic device completes the aging test once by means of a certain image file (here, image file 202 is assumed to be image file) in the image files 201-203, as can be seen from the foregoing description, when the image file 202 should be stored in the storage partition 20, the electronic device immediately deletes the image file 202 in the storage partition 20, so that the next aging test can be performed by using the image files corresponding to other voltage values; alternatively, the electronic device may temporarily not delete the image file 202 in the storage partition 20, and delete the image file 202 in the storage partition 20 if the subsequent user needs to use other image files to perform the next aging test on the memory.

The memory of the electronic device is provided with different limit test voltage values which are obviously higher and/or lower than the conventional voltage values through a plurality of image files of different versions (for example, the voltage values corresponding to VDD2 and VDDQ of the memory are set to be much higher and/or lower than the default values in the aging test process), so that more severe aging test is carried out on memory particles in the memory (for example DDR), the memory particles with poor quality are forced to show quality defects as early as possible in the aging test process, the memory particles with poor quality can be screened and removed before the product is sold, so that the failure rate of the electronic device in the use process of a user after the electronic device is sold can be reduced, and the probability that the electronic device is returned by the user after the electronic device is sold can be reduced.

It will be appreciated that the memory is burn-in tested using a threshold voltage (i.e., a high threshold voltage and a low threshold voltage), while it is possible to screen out poor quality memory particles, overscreening may occur. For example, when the memory is subjected to aging test by only using the limit high voltage and/or the limit low voltage, and some memory particles are screened out, the remaining memory particles in the memory are high probability memory particles with enough quality; however, among those memory particles that are screened out, there may be a portion of memory particles whose quality performance, while perhaps slightly inferior to those of the remaining memory particles, is nearly comparable, and may even be as excellent as those of the remaining memory particles, which still function properly. However, due to the limitation of the extreme high pressure environment and the extreme low pressure environment, this part of the particles is regarded as particles with poor quality and is screened out, which certainly wastes resources and increases the production cost of the manufacturer.

Therefore, on the basis of the foregoing test method and the storage medium 02, the present application also provides another test method and the storage medium 03, in which, in addition to the image files for providing the default voltage, the limit low voltage and the limit high voltage for the memory, some image files for configuring the low operating voltage and the high operating voltage for the memory are stored in the storage medium 03. The difference between the image files corresponding to the limit low voltage and the limit high voltage is that the voltage values provided by the image files of the image files providing the low voltage for the memory are different, but are larger than the limit low voltage, and the voltage values provided by the image files of the image files providing the high voltage for the memory are different, but are smaller than the limit high voltage. In a specific aging test process, a user can select a corresponding image file and a corresponding aging test voltage item according to a specific requirement level for the quality performance of the memory particles.

Please refer to fig. 3 in detail. As shown in fig. 3, the storage medium 03 stores therein a plurality of storage partitions including a storage partition 30, a storage partition 31, a storage partition 32-a storage partition 3N, and a storage partition 32 '-a storage partition 3M'. The storage partition 31, the storage partition 32-the storage partition 3N and the storage partition 32 '-the storage partition 3M' are used for storing a plurality of versions of image files, each storage partition only stores one image file, and the formats of the image files can be any one of iso, bin, img, tao, gho and other formats; in addition, N and M are integers greater than 1, and N and M may be the same or different values, which is not limited in this application. The storage partition 30 may also be referred to as a default storage partition, and when performing the burn-in test, the electronic device may select one image file (i.e., one image file among the image files 301, 302-30N, 302' -30M ') from the storage partition 31, the storage partition 32-3N, and the storage partition 32' -3M ' according to the user's requirements, and brush the selected image file into the storage partition 30, where any one image file may provide the electronic device with all contents for running the burn-in test program, such as instruction codes, libraries when running the program, environment variables, and configuration files. Specific:

Stored in the memory partition 31 is an image file 301 that may be used to configure the operating voltage of the memory to a default voltage; it should be understood that, the voltage value corresponding to the "default voltage" is the working voltage value of the memory where the memory particle is located, and the voltage value is the setting of the memoryThe production of the meter is uniformly specified, and specific reference can be made to the above related description, which is not repeated here. Specifically, the image file 301 may be used to configure the operating voltage of the memory to vddq=v _n1 And VDD2 = V _n2 Wherein V is _n1 And V _n2 May have values of 600mV and 1128mV, respectively; understandable V _n1 And V _n2 Other values may be set depending on the particular model of memory, as this application is not limiting. After the electronic device has been able to write the image file 301 to the memory partition 30 during burn-in testing of the electronic device, the electronic device may then configure VDDQ and VDD2, respectively, for memory in the electronic device as V based on the image file 301 _n1 And V _n2 Is set in the above-described state.

The storage partition 32-storage partition 3N stores the image files 302-30N, and a total of (N-1) image files, one image file is stored in each storage partition. Wherein:

The image file 30N stored in the memory partition 3N may be used to configure the operating voltage of the memory to an extreme low voltage. The specific value of VDDQ and VDD2 corresponding to the extreme low voltage is V _min1 And V _min2 . Similarly, V _min1 Voltage value and default value of VDDQ (i.e. V described above _n1 ) Difference between, V _min2 Default to VDD2 (i.e., V as described above _n2 ) The difference between these may be set to be greater than a certain threshold (e.g., 50 mV) to facilitate screening out these bad quality memory particles. Specifically, V _min1 And V _min2 Can be set to be V _min1 ＝540mV，V _min2 =1016 mV, of course, V _min1 And V _min2 And the specific values may also be set to other values according to the user's needs, which is not limited in this application.

Each image file stored in memory partition 32-memory partition 3 (N-1) (memory partition 3 (N-1) is not shown in FIG. 3) may configure the memory with a different value of low voltage. It should be understood that "low voltage" as used herein means that the value of VDDQ of the image file configuration is less than V _n1 And is greater than V _min1 The value of VDD2 is less than V _n2 And is greater than V _min2 . Further, the values of VDDQ configured by the respective image files in the memory partition 32-memory partition 3 (N-1) may be different, and the values of VDD2 provided by the respective image files may be different.

Specifically, the values of VDDQ for image files 301-30N may exhibit a decreasing trend, such as an arithmetic progression. For example, in the foregoing V _n1 =600 mV and V _min1 =540 mV, and the above N is equal to 5 for example: when N is equal to 5, then this indicates that the storage partition 32-storage partition 35 stores image files 302-305 for a total of 4 image files. Wherein the image file stored in memory partition 35 may be used to configure the VDDQ of the memory to extreme low voltage V _min1 =540 mV, the voltage value of VDDQ provided by image file 304 (not shown in fig. 3) in memory partition 34 (not shown in fig. 3) may be V ₃₄₁ =555 mV, the voltage value of VDDQ provided by image file 303 in memory partition 33 may be V ₃₃₁ =570 mV; the voltage value of VDDQ configured by image file 304 in storage partition 32 may be V ₃₂₁ =585 mV. That is, the voltage values of VDDQ for image files 301-305 are 600mV, 585mV, 570mV, 555mV, and 540mV, respectively, which are an arithmetic progression with a tolerance of 15.

Similarly, the values of VDD2 corresponding to image 301-image 30N may exhibit a gradual decrease trend, and the values of VDD2 corresponding to image 301, image 304-image 30M may exhibit a gradual increase trend. For example, in V _n2 =1128 mV and V _min2 For example, when N is equal to 5, the voltage value of VDD2 configured in image files 301-305 may be 1128mV, 1110mV, 1072mV, 1044mV, and 1016mV, respectively, which are an arithmetic series with a tolerance of 28.

The storage partition 32 '-storage partition 3M' stores the image files 302 '-image file 30M', and a total of (M-1) image files, one image file is stored in each storage partition. Wherein:

mirror image text stored in memory partition 3MThe element 30M' may be used to configure the operating voltage of the memory to an extreme high voltage. The specific value of VDDQ and VDD2 corresponding to the extreme high voltage is V _max1 And V _max2 . Similarly, V _max1 Voltage value and default value of VDDQ (i.e. V described above _n1 ) Difference between, V _max2 Default to VDD2 (i.e., V as described above _n2 ) The difference between these may be set to be greater than a certain threshold (e.g., 50 mV) to facilitate screening out these bad quality memory particles. Specifically, V _max1 And V _max2 Can be set to be V _max1 ＝660mV，V _max2 1240mV, of course, V _max1 And V _max2 And the specific values may also be set to other values according to the user's needs, which is not limited in this application.

The various image files stored in memory partition 32' -memory partition 3 (M-1) ' (memory partition 3 (M-1) ', not shown in fig. 3) may configure the memory with different values of high voltage. Similarly, the term "high voltage" as used herein means that the value of VDDQ for the memory configuration of the image file is greater than V _n1 And is smaller than V _max1 The value of VDD2 is greater than V _n2 And is smaller than V _max2 . Further, the values of VDDQ configured by the respective image files in the memory partition 32 '-memory partition 3 (M-1)' may be different, and the values of VDD2 configured by the respective image files may be different.

Specifically, the values of VDDQ corresponding to image file 301, image file 302 '-image file 30M' may be shown as increasing trend, such as an arithmetic progression. For example, in the foregoing V _n1 =600 mV and V _max1 =660 mV, and the above M is equal to 5 for example: when M equals 5, then image files 301, 302 '-305' stored in memory partition 31, 32 '-3M' are voltage values of VDDQ for the memory configuration of 600mV, 615mV, 630mV, 645mV, and 660mV, respectively, which are an arithmetic progression with a tolerance of 15.

Similarly, the values of VDD2 provided by mirror 301, 302 '-30M' may also be presented as increasing valuesTrend, and the values of VDD2 provided by image 301, 302 '-image 30M' may appear to be a gradual increasing trend. For example, in V _n2 =1128 mV and V _max2 For example, when M is equal to 5, the voltage value of VDD2 for the memory configuration of image file 301-image file 305 may be 1128mV, 1156mV, 1184mV, 1212mV, and 1240mV, respectively, which are an arithmetic progression with a tolerance of 28.

It will be appreciated that when performing burn-in testing for an electronic device, after the electronic device has swiped any of image files 302-30N into memory partition 30, the electronic device may provide a corresponding voltage value to memory in the electronic device based on the image file. After the image file is written to the memory partition 30, the electronic device may not only provide the memory granules with the corresponding test voltages based on the image file, but may also provide the electronic device with, for example, instruction code, libraries at run-time, environment variables, and configuration files needed for running the burn-in program during the burn-in test. Reference may be made specifically to the foregoing description of fig. 2, and details thereof are not repeated here.

It should be noted that, for each image file stored in the storage partition 31, the storage partition 32-storage partition 3N, and the storage partition 32 '-storage partition 3M', the effect of blocking (herein, "blocking" that is, identifying bad memory particles and deleting them from the memory) of one image file on memory particles depends on VDDQ and the value of VDDQ that it can provide; that is, the larger the voltage value of VDDQ and/or VDD2 provided by an image file is different from the corresponding default voltage value, the more the image file is used to perform an aging test on the memory, the more the image file is used to identify and screen out poor-quality particles, and the quality performance of the remaining memory particles in the memory is relatively superior. For example, memory particles intercepted by burn-in using image file 302 are generally less than those intercepted by burn-in using image file 303, and accordingly, the performance of the product obtained by burn-in using image file 302 is generally poorer than that obtained by burn-in using image file 302; similarly, the performance of the product obtained using image file 30N and the product obtained using image file 30M' is generally best.

Therefore, in the process of performing the burn-in test on the memory, the electronic device may select the image files in a single one of the memory partition 31, the memory partition 32-memory partition 3N and the memory partition 32 '-memory partition 3M' to perform a single test or perform multiple tests from multiple image files in multiple or all memory partitions, respectively, according to the specific needs of the user. For example, when the user has extremely high memory performance in the electronic device, the manufacturer may use image file 30N and/or image file 30M' to age the memory product; for another example, the manufacturer may sequentially use the image files in the storage partition 31, the storage partition 32-storage partition 3N and the storage partition 32 '-storage partition 3M' to perform the aging test on the memory product, and grade the quality of the memory product according to the voltage value provided by the image file used each time (for example, the performance of the memory a and the memory B is almost unchanged when the image file 301 is used for performing the aging test, but when the image file 302 is used for performing the aging test on the two memories, the quality of the memory a is obviously less than that of the memory B, so that the performance of the memory a can be considered to be better than that of the memory B, so that the memory product with the quality suitable for the quality is selected according to the requirement of the specific product. Thus, the resources can be saved, and the production cost of manufacturers is greatly reduced.

It will be appreciated that in the foregoing description of storage medium 02 and storage medium 03, the image files of each version are stored in different storage partitions, which are likely to have partition signatures in order to ensure that the files they store cannot be tampered with by a person. That is, in the storage medium 02 and the storage medium 03, once the image files in the respective storage partitions are stored in the corresponding partitions, it may not be easy or even possible for the user to edit the image files in the partitions. However, during the burn-in process of the memory product, the voltage values of the image files in each memory partition that can be configured for the memory may not meet the requirements of the user. For example, if the manufacturer wants to require a voltage higher than the default voltage value but lower than the limit voltage as the voltage used in the burn-in test for each of the files in the storage medium 02, then none of the image files in the storage partition 21-storage partition 23 can meet the user's needs, and the manufacturer can only re-brush the partition to edit the image file in the partition to meet the test needs, which certainly does not require much effort.

Accordingly, the application further provides a test system, which can comprise a test terminal and a rewriting terminal, wherein the test terminal stores an aging test program which can be used for performing aging test on the memory, the aging test program comprises a configuration file, the configuration file can be received by the rewriting terminal and is stored in the aging test program of the test terminal again after rewriting voltage items required by the aging test on the rewriting terminal, so that a user can change voltage values used by the aging test more flexibly according to own test requirements, the aging test can be performed efficiently, and the operation cost of the aging test is saved.

As shown in fig. 4, the test system 40 includes a test terminal 401 and a rewrite terminal 402. Wherein:

the test terminal 401 may be a terminal device with a memory installed, such as a mobile phone (mobile phone), a vehicle-mounted device (e.g., on Board Unit (OBU)), a tablet (pad), a computer with a data transceiving function (e.g., a notebook, a palm computer, etc.), a mobile internet device (mobile internet device, MID), a terminal in industrial control (industrial control), a wireless terminal in unmanned (self driving), a terminal in transportation safety (transportation safety), a terminal in smart city (smart city), a terminal in smart home (smart home), a terminal device in a 5G network, or a terminal device in a future evolved public land mobile communication network (public land mobile network, PLMN), etc. It will be appreciated that the specific form of the test terminal 401 is not limited in this application; all the terminal devices with storage media disposed therein fall within the protection scope of the test terminal 401. In particular, the test terminal 401 may be an electronic device as described in the foregoing description.

The rewriting terminal 402 may be an electronic device with program writing and development functions, such as a tablet computer (pad), a computer with data transceiving function (such as a notebook computer, a palm computer, etc.). It is understood that the present application is not limited to the specific form of the rewriting terminal 402.

In addition, a burn-in test program is installed in the test terminal 401, and the test terminal 401 can perform burn-in test on a storage medium deployed by itself based on the burn-in test program. In particular, the burn-in test program may exist in the form of program code on a storage medium in the test terminal 401. In general, when an electronic device downloads an application program, file data for running the application program is downloaded at the same time, and the file data is generally included in a package of the application program. Similarly, when the test terminal 401 downloads and installs the burn-in test program, the configuration file of the burn-in test program is also downloaded to the test terminal 401. It should be understood that the configuration file of the application is an XML file or an XBL file for binding the control program set, and its name is the name of the executable file of the application, and the common file name is with a suffix of config. It may redirect an application from one version using a parallel program set to another version of the same program set. Most importantly, unlike storing an image file in a storage partition with a signature, the configuration file of an application is typically stored in the same location where the application manifest is located, e.g., in the "/user" folder of the test terminal 401, which can be easily obtained by the user, and which only needs to be transferred to the PC (e.g., the rewrite terminal 402), where the user can re-edit the configuration file to change some parameters therein.

As shown in fig. 4, it is assumed that the current profile of the burn-in test program installed in the test terminal is an initial profile, which can provide the memory with a default voltage, a limit high voltage, and a limit low voltage only during the burn-in test. However, at this time, when the user performs the burn-in test on the memory through the limit high voltage and the limit low voltage, the screening rate of the memory particles of the memory is found to be too high, resulting in too high production cost, and it is desirable to perform the burn-in test by using a voltage value having a smaller difference from the default voltage, so that the user may obtain the initial configuration file from the test terminal 401 and rewrite the initial configuration file through the rewrite terminal 402. Specifically, the rewriting of the initial configuration file may be completed through specific instruction codes, for example, the user may clear the content in the initial configuration file, such as parameters of the aging test voltage item, through instruction codes similar to ">/usr/local/xbl.conf", and then the user may write the data, such as the aging test voltage item, required by the user into the configuration file through instruction codes similar to "vim/usr/local/xbl.conf", so as to obtain the target configuration file in fig. 4. As can be seen from fig. 4, the burn-in voltage terms that the target profile can provide are different from those of the initial profile, and it should be understood that the "different" may be different in number or different in voltage value. That is, fig. 4 only illustrates the number of the burn-in test items in the target configuration file and the voltage value corresponding to each burn-in test item, and when the configuration file is rewritten, the user may not only change the voltage value corresponding to each test item in the original burn-in test items, but also add or delete the original voltage items, so that the user can flexibly adjust the number and the number of the burn-in test voltage items according to the test requirements and the product requirements of the user, which is not limited in this application.

It should be noted that, after the target configuration file is obtained by the overwriting terminal, the user needs to restore the target configuration file to the test terminal (generally, in the directory where the original initial configuration file is located) to enable the target configuration file to be effective. Specifically, after storing the target configuration file in the test terminal 401, the user may restart the test terminal, because the configuration file of the software has been changed, and only if the test terminal is restarted, the test terminal 401 can successfully modify the registry of the system to validate the burn-in test software operating environment. When the user restarts the test terminal 401, the test terminal reads all the burn-in test voltage items and voltage values corresponding to each burn-in test voltage item provided by the target configuration file in the shared memory through the corresponding parameter transfer function, which is equivalent to integrating all the burn-in test voltage items and voltage values corresponding to each burn-in test voltage item in the target configuration file into the system registry of the test terminal 401, and then the test terminal 401 can normally operate the burn-in test program. After the user opens the burn-in test program, all burn-in test voltage items in the target configuration file are displayed in a user interface displayed on the electronic device (refer to the subsequent embodiments, and are not described herein in detail); after a user selects a voltage item from a user interface displayed by the test terminal 401 and starts the aging test, a voltage value corresponding to the voltage item can be sent to an abl module in the test terminal 401 through an interface function, and after the abl module receives parameters, the abl module can write the parameters into a corresponding memory address through a shared memory interface, so that the test terminal 401 can use the voltage value corresponding to the voltage item as a storage to perform the aging test.

The user interface to which the present application relates is described next.

As can be seen from the foregoing description, after the electronic device opens the burn-in test program, all the burn-in test voltage items provided by the configuration file of the burn-in test program (or all the burn-in test voltage items provided by the image file in the memory partition) may be displayed in the interface of the electronic device, and the user may select the corresponding voltage item according to the test requirement and the product requirement thereof to perform the burn-in test. Fig. 5 illustrates a user interface displayed by the electronic device after a user opens the burn-in test program. As shown in fig. 5, the user interface 50 includes a options box 501, a read-write test card 502, and a memory granule test card 503, a "start" control 504, and a "stop" control 505, among others:

option box 501 is used to show all burn-in voltage items provided by the configuration file of the burn-in program (or all burn-in voltage items provided by the image file in the memory partition), and the electronic device may respond to an operation, such as a click operation, of any one voltage item by a user, so that the voltage item is in a selected state (such as "VDDQ-600mV vddc 2-1128mV (default voltage)") so that the electronic device may use a voltage value corresponding to the voltage item as an operating voltage of the memory during the burn-in test.

Specifically, when the burn-in test is completed based on the image file stored in the storage partition, a mapping table may be stored in the electronic device, where the mapping table records the name or the storage address of the image file corresponding to each voltage option (for example, an array xbl _addr [ ] is set according to the voltage configuration options (0 x 1-low voltage, 0x 2-normal, 0x 3-high voltage), and the corresponding low voltage, normal, and high voltage partition names are obtained in the array xbl _addr [ ]; when a user clicks a certain voltage item, the electronic device may query a storage address of an image file corresponding to the voltage item, write the read image file into a target partition (for example, the storage partition 20 or the storage partition 30 in the foregoing description) according to a partition name use command after acquiring the image file based on the storage address, and send a reboot restart command after writing is completed, so that the electronic device can use the image file to complete relevant configuration of a test context required by the burn-in test, including configuring an operating voltage of a memory to be a voltage value corresponding to the image file.

Or when the aging test is completed based on the configuration file stored in the user folder, when the user clicks a certain voltage item, the electronic device can send a voltage value corresponding to the voltage item to the abl module through the interface function, the abl module writes the voltage value into a corresponding memory address through the shared memory interface after receiving the voltage value, and the electronic device can configure the working voltage of the memory into the voltage value corresponding to the image file subsequently.

The read/write test card 502 may test the read/write rate of the memory at a given operating voltage (i.e., the voltage corresponding to the voltage item selected by the user in option box 501).

The memory granule test card 503 may sequentially store each memory granule in the memory, and screen out the memory granule with poor quality performance.

It is to be appreciated that after the user clicks the "start" control 504, the electronic device can automatically restart in response to the operation and complete the relevant configuration of the burn-in test procedure based on the voltage item previously selected by the user (e.g., "VDDQ-600mV vddb 2-1128mV (default voltage)") including configuring the operating voltage of the storage medium to the voltage value corresponding to the voltage item. Optionally, after the electronic device is restarted, the electronic device may redisplay the user interface 50 directly to facilitate the user's view of the specific data for the burn-in test.

When the burn-in test begins, the user may observe the progress of the burn-in test in the user interface 50 and terminate the burn-in test by clicking on the "stop" control 505 at any time. It can be understood that, for the memory, the read-write rate and the qualification rate of the memory particles are important reference indexes for reflecting the overall performance quality of the memory, so that the overall performance quality of the memory can be accurately judged by taking the read-write rate and the qualification rate of the memory particles as the performance indexes of the aging test, and the memory particles with poor quality can be screened out.

It should be understood that fig. 5 is merely an exemplary illustration of a user interface displayed by the electronic device after the user opens the burn-in test program, and is not meant to limit the present embodiment. For example, in the actual user interface, the burn-in test voltage items displayed in the option box 501 may be other numbers, and the voltage value corresponding to each voltage item may also be other values; alternatively, the performance index of the burn-in test may be other content, such as the robustness of the memory (e.g., by repeatedly powering down the firmware), etc.

Based on the aging test method based on the multi-version image file mentioned in the foregoing description, the present application further provides a method for changing the working voltage of the memory, where the method can utilize the image file in the electronic device to change the working voltage of the memory of the electronic device when the electronic device is powered off due to abnormal storage medium, so as to improve the stability of the electronic device in the subsequent use process of the user. Please refer to fig. 6 and fig. 7 in detail.

When the electronic device is abnormally restarted, the electronic device can identify whether the reason of the abnormal restart is related to the abnormal memory. If so, the electronic device may display a user interface 60 as shown in FIG. 6 after reboot.

As shown in fig. 6 (a), the user interface 60 may include an information prompt box 601. Information prompt box 601 may be used to display a prompt that "is a system-occurrence-abnormal-restart, possibly related to a memory (DDR) abnormality, is a voltage-improvement device system operating state attempting to adjust DDR? ".

After the user clicks on the "ok" control 601A in the information prompt 601, the electronic device may respond to the user operation and display the user interface 61 as shown in fig. 6 (B). The user interface 61 may include an options box 611 and a history box 612. Wherein:

option box 611 may be used to expose the voltage items provided by the image files in the memory partition. It should be appreciated that, in general, the memory in the electronic device is operated at a default voltage, and when the electronic device is restarted due to a memory abnormality, it is indicated that the default voltage of the memory, i.e., VDDQ-600mV vddc 2-1128mV (default voltage) shown in fig. 6 (B), may not be applicable to the current memory. Therefore, the voltage items for providing the default voltage are not shown in the option box, but voltage items corresponding to a plurality of image files for providing the low voltage (including the limit low voltage) and the high voltage (including the limit high voltage) are shown; the electronic device may respond to an operation, such as a click operation, of a user on any one of the voltage items, so that the voltage item is in a selected state (such as "VDDQ-570mV vddb 2-1072mV (low voltage)", in the option box 611), so that the electronic device may use a voltage value corresponding to the voltage item as an operating voltage of the memory during the burn-in test.

It should be noted that, because the memory abnormality is not known, the user cannot determine whether the current memory is stably operated at a high voltage or at a low voltage. Thus, in embodiments of the present application, a user may randomly select a voltage term (e.g., "VDDQ-570mV VDDH 2-1072mV (low voltage)") in option box 611 and use the image file corresponding to the voltage term to change the operating voltage of the memory.

History box 612 is used to show voltage entries that have been used in the process of user history adjusting the operating voltage of the memory, such as voltage entries "VDDQ-600v VDD2-1128mV (default voltage)", in history box 612.

In connection with the foregoing description, it is not possible for the user to determine whether the current memory is operating stably at a high voltage or at a low voltage, and thus the user may not be able to accurately select an operating voltage value suitable for the current memory, for example, when the user selects the voltage item "VDDQ-560 mV vddb 2-1072mV (low voltage)", clicks the "restart device" control 611A, the operating voltage of the memory in the electronic device may be adjusted to vddq=570 mV and vdd2=1072 mV, and if the voltage value is still not suitable for the current memory, the electronic device may possibly be restarted due to the memory abnormality during the subsequent operation. Thus, the user may need to try the voltage items in option box 611 one by one to determine the voltage value applicable to the current memory. In order to prevent the user from reusing the previously used but unsuitable voltage items, the history box 612 may display the voltage items used in the process of adjusting the operating voltage of the memory by the user, so that when the user selects the voltage items, the user may more conveniently select the voltage items that have not been tried.

Assuming vddq=570 mV and vdd2=1072 mV are still not applicable to the current memory, the next time the user reselects the voltage term, the voltage term "VDDQ-570mV VDD2-1072mV (low voltage)" will also be displayed in the history box. Further, the voltage item may be displayed at the top of the history information box, indicating that it is the most recently used voltage item. As shown in FIG. 7, in the history information box 702 of the user interface 70, the voltage items "VDDQ-600mV VDD2-1128mV (default voltage)" and the voltage item "VDDQ-570mV VDD2-1072mV (low voltage)" are both displayed in the history information box 702, and the voltage item "VDDQ-570mV VDD2-1072mV (low voltage)" is displayed at the top of the history information box 702.

It should be noted that, in this embodiment of the present application, after a user selects a certain voltage item and reboots the device, the electronic device may query a storage address of an image file corresponding to the voltage item, and after acquiring the image file based on the storage address, brush the image file into a corresponding storage partition (for example, the storage partition 20 or the storage partition 30 in the foregoing description), and configure the working voltage of the memory to be a voltage value corresponding to the image file. Thereafter, if the electronic device is operating properly (i.e., is no longer rebooted due to a memory exception), the image file will always be saved in the memory partition.

Next, an electronic device provided by the present application is described.

The electronic device may be a mobile phone, a tablet computer, a wearable device, a vehicle-mounted device, an augmented reality (augmented reality, AR)/Virtual Reality (VR) device, a notebook computer, an ultra-mobile personal computer (UMPC), a netbook, a personal digital assistant (personaldigital assistant, PDA), or a special camera (e.g., a single-lens reflex camera, a card-type camera), etc., which is not limited in the specific type of the electronic device.

Fig. 8 exemplarily shows a structure of the electronic device.

The electronic device 100 may include a processor 110, an external memory interface 120, an internal memory 121, a universal serial bus (universal serial bus, USB) interface 130, a charge management module 140, a power management module 141, a battery 142, an antenna 1, an antenna 2, a mobile communication module 150, a wireless communication module 160, an audio module 170, a speaker 170A, a receiver 170B, a microphone 170C, an earphone interface 170D, a sensor module 180, keys 190, a motor 191, an indicator 192, a camera 193, a display 194, and a subscriber identity module (subscriber identification module, SIM) card interface 195, etc. The sensor module 180 may include a pressure sensor 180A, a gyro sensor 180B, an air pressure sensor 180C, a magnetic sensor 180D, an acceleration sensor 180E, a distance sensor 180F, a proximity sensor 180G, a fingerprint sensor 180H, a temperature sensor 180J, a touch sensor 180K, an ambient light sensor 180L, a bone conduction sensor 180M, and the like.

It should be understood that the illustrated structure of the embodiment of the present invention does not constitute a specific limitation on the electronic device 100. In other embodiments of the present application, electronic device 100 may include more or fewer components than shown, or certain components may be combined, or certain components may be split, or different arrangements of components. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

The processor 110 may include one or more processing units, such as: the processor 110 may include an application processor (application processor, AP), a modem processor, a graphics processor (graphics processing unit, GPU), an image signal processor (image signal processor, ISP), a controller, a video codec, a digital signal processor (digital signal processor, DSP), a baseband processor, and/or a neural network processor (neural-network processing unit, NPU), etc. Wherein the different processing units may be separate devices or may be integrated in one or more processors.

The controller can generate operation control signals according to the instruction operation codes and the time sequence signals to finish the control of instruction fetching and instruction execution.

A memory may also be provided in the processor 110 for storing instructions and data. In some embodiments, the memory in the processor 110 is a cache memory. The memory may hold instructions or data that the processor 110 has just used or recycled. If the processor 110 needs to reuse the instruction or data, it can be called directly from the memory. Repeated accesses are avoided and the latency of the processor 110 is reduced, thereby improving the efficiency of the system.

In some embodiments, the processor 110 may include one or more interfaces. The interfaces may include an integrated circuit (inter-integrated circuit, I2C) interface, an integrated circuit built-in audio (inter-integrated circuit sound, I2S) interface, a pulse code modulation (pulse code modulation, PCM) interface, a universal asynchronous receiver transmitter (universal asynchronous receiver/transmitter, UART) interface, a mobile industry processor interface (mobile industry processor interface, MIPI), a general-purpose input/output (GPIO) interface, a subscriber identity module (subscriber identity module, SIM) interface, and/or a universal serial bus (universal serial bus, USB) interface, among others.

The I2C interface is a bi-directional synchronous serial bus comprising a serial data line (SDA) and a serial clock line (derail clock line, SCL). In some embodiments, the processor 110 may contain multiple sets of I2C buses. The processor 110 may be coupled to the touch sensor 180K, charger, flash, camera 193, etc., respectively, through different I2C bus interfaces. For example: the processor 110 may be coupled to the touch sensor 180K through an I2C interface, such that the processor 110 communicates with the touch sensor 180K through an I2C bus interface to implement a touch function of the electronic device 100.

The I2S interface may be used for audio communication. In some embodiments, the processor 110 may contain multiple sets of I2S buses. The processor 110 may be coupled to the audio module 170 via an I2S bus to enable communication between the processor 110 and the audio module 170. In some embodiments, the audio module 170 may transmit an audio signal to the wireless communication module 160 through the I2S interface, to implement a function of answering a call through the bluetooth headset.

PCM interfaces may also be used for audio communication to sample, quantize and encode analog signals. In some embodiments, the audio module 170 and the wireless communication module 160 may be coupled through a PCM bus interface. In some embodiments, the audio module 170 may also transmit audio signals to the wireless communication module 160 through the PCM interface to implement a function of answering a call through the bluetooth headset. Both the I2S interface and the PCM interface may be used for audio communication.

The UART interface is a universal serial data bus for asynchronous communications. The bus may be a bi-directional communication bus. It converts the data to be transmitted between serial communication and parallel communication. In some embodiments, a UART interface is typically used to connect the processor 110 with the wireless communication module 160. For example: the processor 110 communicates with a bluetooth module in the wireless communication module 160 through a UART interface to implement a bluetooth function. In some embodiments, the audio module 170 may transmit an audio signal to the wireless communication module 160 through a UART interface, to implement a function of playing music through a bluetooth headset.

The MIPI interface may be used to connect the processor 110 to peripheral devices such as a display 194, a camera 193, and the like. The MIPI interfaces include camera serial interfaces (camera serial interface, CSI), display serial interfaces (display serial interface, DSI), and the like. In some embodiments, processor 110 and camera 193 communicate through a CSI interface to implement the photographing functions of electronic device 100. The processor 110 and the display 194 communicate via a DSI interface to implement the display functionality of the electronic device 100.

The GPIO interface may be configured by software. The GPIO interface may be configured as a control signal or as a data signal. In some embodiments, a GPIO interface may be used to connect the processor 110 with the camera 193, the display 194, the wireless communication module 160, the audio module 170, the sensor module 180, and the like. The GPIO interface may also be configured as an I2C interface, an I2S interface, a UART interface, an MIPI interface, etc.

The USB interface 130 is an interface conforming to the USB standard specification, and may specifically be a Mini USB interface, a Micro USB interface, a USB Type C interface, or the like. The USB interface 130 may be used to connect a charger to charge the electronic device 100, and may also be used to transfer data between the electronic device 100 and a peripheral device. And can also be used for connecting with a headset, and playing audio through the headset. The interface may also be used to connect other electronic devices, such as AR devices, etc.

It should be understood that the interfacing relationship between the modules illustrated in the embodiments of the present invention is only illustrative, and is not meant to limit the structure of the electronic device 100. In other embodiments of the present application, the electronic device 100 may also use different interfacing manners, or a combination of multiple interfacing manners in the foregoing embodiments.

The charge management module 140 is configured to receive a charge input from a charger. The charger can be a wireless charger or a wired charger. In some wired charging embodiments, the charge management module 140 may receive a charging input of a wired charger through the USB interface 130. In some wireless charging embodiments, the charge management module 140 may receive wireless charging input through a wireless charging coil of the electronic device 100. The charging management module 140 may also supply power to the electronic device through the power management module 141 while charging the battery 142.

The power management module 141 is used for connecting the battery 142, and the charge management module 140 and the processor 110. The power management module 141 receives input from the battery 142 and/or the charge management module 140 to power the processor 110, the internal memory 121, the display 194, the camera 193, the wireless communication module 160, and the like. The power management module 141 may also be configured to monitor battery capacity, battery cycle number, battery health (leakage, impedance) and other parameters. In other embodiments, the power management module 141 may also be provided in the processor 110. In other embodiments, the power management module 141 and the charge management module 140 may be disposed in the same device.

The wireless communication function of the electronic device 100 may be implemented by the antenna 1, the antenna 2, the mobile communication module 150, the wireless communication module 160, a modem processor, a baseband processor, and the like.

The antennas 1 and 2 are used for transmitting and receiving electromagnetic wave signals. Each antenna in the electronic device 100 may be used to cover a single or multiple communication bands. Different antennas may also be multiplexed to improve the utilization of the antennas. For example: the antenna 1 may be multiplexed into a diversity antenna of a wireless local area network. In other embodiments, the antenna may be used in conjunction with a tuning switch.

The mobile communication module 150 may provide a solution for wireless communication including 2G/3G/4G/5G, etc., applied to the electronic device 100. The mobile communication module 150 may include at least one filter, switch, power amplifier, low noise amplifier (low noise amplifier, LNA), etc. The mobile communication module 150 may receive electromagnetic waves from the antenna 1, perform processes such as filtering, amplifying, and the like on the received electromagnetic waves, and transmit the processed electromagnetic waves to the modem processor for demodulation. The mobile communication module 150 can amplify the signal modulated by the modem processor, and convert the signal into electromagnetic waves through the antenna 1 to radiate. In some embodiments, at least some of the functional modules of the mobile communication module 150 may be disposed in the processor 110. In some embodiments, at least some of the functional modules of the mobile communication module 150 may be provided in the same device as at least some of the modules of the processor 110.

The modem processor may include a modulator and a demodulator. The modulator is used for modulating the low-frequency baseband signal to be transmitted into a medium-high frequency signal. The demodulator is used for demodulating the received electromagnetic wave signal into a low-frequency baseband signal. The demodulator then transmits the demodulated low frequency baseband signal to the baseband processor for processing. The low frequency baseband signal is processed by the baseband processor and then transferred to the application processor. The application processor outputs sound signals through an audio device (not limited to the speaker 170A, the receiver 170B, etc.), or displays images or video through the display screen 194. In some embodiments, the modem processor may be a stand-alone device. In other embodiments, the modem processor may be provided in the same device as the mobile communication module 150 or other functional module, independent of the processor 110.

The wireless communication module 160 may provide solutions for wireless communication including wireless local area network (wireless local area networks, WLAN) (e.g., wireless fidelity (wireless fidelity, wi-Fi) network), bluetooth (BT), global navigation satellite system (global navigation satellite system, GNSS), frequency modulation (frequency modulation, FM), near field wireless communication technology (near field communication, NFC), infrared technology (IR), etc., as applied to the electronic device 100. The wireless communication module 160 may be one or more devices that integrate at least one communication processing module. The wireless communication module 160 receives electromagnetic waves via the antenna 2, modulates the electromagnetic wave signals, filters the electromagnetic wave signals, and transmits the processed signals to the processor 110. The wireless communication module 160 may also receive a signal to be transmitted from the processor 110, frequency modulate it, amplify it, and convert it to electromagnetic waves for radiation via the antenna 2.

In some embodiments, antenna 1 and mobile communication module 150 of electronic device 100 are coupled, and antenna 2 and wireless communication module 160 are coupled, such that electronic device 100 may communicate with a network and other devices through wireless communication techniques. The wireless communication techniques may include the Global System for Mobile communications (global system for mobile communications, GSM), general packet radio service (general packet radio service, GPRS), code division multiple access (code division multiple access, CDMA), wideband code division multiple access (wideband code division multiple access, WCDMA), time division code division multiple access (time-division code division multiple access, TD-SCDMA), long term evolution (long term evolution, LTE), BT, GNSS, WLAN, NFC, FM, and/or IR techniques, among others. The GNSS may include a global satellite positioning system (global positioning system, GPS), a global navigation satellite system (global navigation satellite system, GLONASS), a beidou satellite navigation system (beidou navigation satellite system, BDS), a quasi zenith satellite system (quasi-zenith satellite system, QZSS) and/or a satellite based augmentation system (satellite based augmentation systems, SBAS).

The electronic device 100 implements display functions through a GPU, a display screen 194, an application processor, and the like. The GPU is a microprocessor for image processing, and is connected to the display 194 and the application processor. The GPU is used to perform mathematical and geometric calculations for graphics rendering. Processor 110 may include one or more GPUs that execute program instructions to generate or change display information.

The display screen 194 is used to display images, videos, and the like. The display 194 includes a display panel. The display panel may employ a liquid crystal display (liquid crystal display, LCD), an organic light-emitting diode (OLED), an active-matrix organic light-emitting diode (AMOLED) or an active-matrix organic light-emitting diode (matrix organic light emitting diode), a flexible light-emitting diode (flex), a mini, a Micro led, a Micro-OLED, a quantum dot light-emitting diode (quantum dot light emitting diodes, QLED), or the like. In some embodiments, the electronic device 100 may include 1 or N display screens 194, N being a positive integer greater than 1.

The electronic device 100 may implement photographing functions through an ISP, a camera 193, a video codec, a GPU, a display screen 194, an application processor, and the like.

The ISP is used to process data fed back by the camera 193. For example, when photographing, the shutter is opened, light is transmitted to the camera photosensitive element through the lens, the optical signal is converted into an electric signal, and the camera photosensitive element transmits the electric signal to the ISP for processing and is converted into an image visible to naked eyes. ISP can also optimize the noise, brightness and skin color of the image. The ISP can also optimize parameters such as exposure, color temperature and the like of a shooting scene. In some embodiments, the ISP may be provided in the camera 193.

The camera 193 is used to capture still images or video. The object generates an optical image through the lens and projects the optical image onto the photosensitive element. The photosensitive element may be a charge coupled device (charge coupled device, CCD) or a Complementary Metal Oxide Semiconductor (CMOS) phototransistor. The photosensitive element converts the optical signal into an electrical signal, which is then transferred to the ISP to be converted into a digital image signal. The ISP outputs the digital image signal to the DSP for processing. The DSP converts the digital image signal into an image signal in a standard RGB, YUV, or the like format. In some embodiments, electronic device 100 may include 1 or N cameras 193, N being a positive integer greater than 1.

The digital signal processor is used for processing digital signals, and can process other digital signals besides digital image signals. For example, when the electronic device 100 selects a frequency bin, the digital signal processor is used to fourier transform the frequency bin energy, or the like.

Video codecs are used to compress or decompress digital video. The electronic device 100 may support one or more video codecs. In this way, the electronic device 100 may play or record video in a variety of encoding formats, such as: dynamic picture experts group (moving picture experts group, MPEG) 1, MPEG2, MPEG3, MPEG4, etc.

The NPU is a neural-network (NN) computing processor, and can rapidly process input information by referencing a biological neural network structure, for example, referencing a transmission mode between human brain neurons, and can also continuously perform self-learning. Applications such as intelligent awareness of the electronic device 100 may be implemented through the NPU, for example: image recognition, face recognition, speech recognition, text understanding, etc.

The external memory interface 120 may be used to connect an external memory card, such as a Micro SD card, to enable expansion of the memory capabilities of the electronic device 100. The external memory card communicates with the processor 110 through an external memory interface 120 to implement data storage functions. For example, files such as music, video, etc. are stored in an external memory card.

The internal memory 121 may be used to store computer executable program code including instructions. The internal memory 121 may include a storage program area and a storage data area. The storage program area may store an application program (such as a sound playing function, an image playing function, etc.) required for at least one function of the operating system, etc. The storage data area may store data created during use of the electronic device 100 (e.g., audio data, phonebook, etc.), and so on. In addition, the internal memory 121 may include a high-speed random access memory, and may further include a nonvolatile memory such as at least one magnetic disk storage device, a flash memory device, a universal flash memory (universal flash storage, UFS), and the like. The processor 110 performs various functional applications of the electronic device 100 and data processing by executing instructions stored in the internal memory 121 and/or instructions stored in a memory provided in the processor.

The electronic device 100 may implement audio functions through an audio module 170, a speaker 170A, a receiver 170B, a microphone 170C, an earphone interface 170D, an application processor, and the like. Such as music playing, recording, etc.

The audio module 170 is used to convert digital audio information into an analog audio signal output and also to convert an analog audio input into a digital audio signal. The audio module 170 may also be used to encode and decode audio signals. In some embodiments, the audio module 170 may be disposed in the processor 110, or a portion of the functional modules of the audio module 170 may be disposed in the processor 110.

The speaker 170A, also referred to as a "horn," is used to convert audio electrical signals into sound signals. The electronic device 100 may listen to music, or to hands-free conversations, through the speaker 170A.

A receiver 170B, also referred to as a "earpiece", is used to convert the audio electrical signal into a sound signal. When electronic device 100 is answering a telephone call or voice message, voice may be received by placing receiver 170B in close proximity to the human ear.

Microphone 170C, also referred to as a "microphone" or "microphone", is used to convert sound signals into electrical signals. When making a call or transmitting voice information, the user can sound near the microphone 170C through the mouth, inputting a sound signal to the microphone 170C. The electronic device 100 may be provided with at least one microphone 170C. In other embodiments, the electronic device 100 may be provided with two microphones 170C, and may implement a noise reduction function in addition to collecting sound signals. In other embodiments, the electronic device 100 may also be provided with three, four, or more microphones 170C to enable collection of sound signals, noise reduction, identification of sound sources, directional recording functions, etc.

The earphone interface 170D is used to connect a wired earphone. The headset interface 170D may be a USB interface 130 or a 3.5mm open mobile electronic device platform (open mobile terminal platform, OMTP) standard interface, a american cellular telecommunications industry association (cellular telecommunications industry association of the USA, CTIA) standard interface.

The pressure sensor 180A is used to sense a pressure signal, and may convert the pressure signal into an electrical signal. In some embodiments, the pressure sensor 180A may be disposed on the display screen 194. The pressure sensor 180A is of various types, such as a resistive pressure sensor, an inductive pressure sensor, a capacitive pressure sensor, and the like. The capacitive pressure sensor may be a capacitive pressure sensor comprising at least two parallel plates with conductive material. The capacitance between the electrodes changes when a force is applied to the pressure sensor 180A. The electronic device 100 determines the strength of the pressure from the change in capacitance. When a touch operation is applied to the display screen 194, the electronic apparatus 100 detects the touch operation intensity according to the pressure sensor 180A. The electronic device 100 may also calculate the location of the touch based on the detection signal of the pressure sensor 180A. In some embodiments, touch operations that act on the same touch location, but at different touch operation strengths, may correspond to different operation instructions. For example: and executing an instruction for checking the short message when the touch operation with the touch operation intensity smaller than the first pressure threshold acts on the short message application icon. And executing an instruction for newly creating the short message when the touch operation with the touch operation intensity being greater than or equal to the first pressure threshold acts on the short message application icon.

The gyro sensor 180B may be used to determine a motion gesture of the electronic device 100. In some embodiments, the angular velocity of electronic device 100 about three axes (i.e., x, y, and z axes) may be determined by gyro sensor 180B. The gyro sensor 180B may be used for photographing anti-shake. For example, when the shutter is pressed, the gyro sensor 180B detects the shake angle of the electronic device 100, calculates the distance to be compensated by the lens module according to the angle, and makes the lens counteract the shake of the electronic device 100 through the reverse motion, so as to realize anti-shake. The gyro sensor 180B may also be used for navigating, somatosensory game scenes.

The air pressure sensor 180C is used to measure air pressure. In some embodiments, electronic device 100 calculates altitude from barometric pressure values measured by barometric pressure sensor 180C, aiding in positioning and navigation.

The magnetic sensor 180D includes a hall sensor. The electronic device 100 may detect the opening and closing of the flip cover using the magnetic sensor 180D. In some embodiments, when the electronic device 100 is a flip machine, the electronic device 100 may detect the opening and closing of the flip according to the magnetic sensor 180D. And then according to the detected opening and closing state of the leather sheath or the opening and closing state of the flip, the characteristics of automatic unlocking of the flip and the like are set.

The acceleration sensor 180E may detect the magnitude of acceleration of the electronic device 100 in various directions (typically three axes). The magnitude and direction of gravity may be detected when the electronic device 100 is stationary. The electronic equipment gesture recognition method can also be used for recognizing the gesture of the electronic equipment, and is applied to horizontal and vertical screen switching, pedometers and other applications.

A distance sensor 180F for measuring a distance. The electronic device 100 may measure the distance by infrared or laser. In some embodiments, the electronic device 100 may range using the distance sensor 180F to achieve quick focus.

The proximity light sensor 180G may include, for example, a Light Emitting Diode (LED) and a light detector, such as a photodiode. The light emitting diode may be an infrared light emitting diode. The electronic device 100 emits infrared light outward through the light emitting diode. The electronic device 100 detects infrared reflected light from nearby objects using a photodiode. When sufficient reflected light is detected, it may be determined that there is an object in the vicinity of the electronic device 100. When insufficient reflected light is detected, the electronic device 100 may determine that there is no object in the vicinity of the electronic device 100. The electronic device 100 can detect that the user holds the electronic device 100 close to the ear by using the proximity light sensor 180G, so as to automatically extinguish the screen for the purpose of saving power. The proximity light sensor 180G may also be used in holster mode, pocket mode to automatically unlock and lock the screen.

The ambient light sensor 180L is used to sense ambient light level. The electronic device 100 may adaptively adjust the brightness of the display 194 based on the perceived ambient light level. The ambient light sensor 180L may also be used to automatically adjust white balance when taking a photograph. Ambient light sensor 180L may also cooperate with proximity light sensor 180G to detect whether electronic device 100 is in a pocket to prevent false touches.

The fingerprint sensor 180H is used to collect a fingerprint. The electronic device 100 may utilize the collected fingerprint feature to unlock the fingerprint, access the application lock, photograph the fingerprint, answer the incoming call, etc.

The temperature sensor 180J is for detecting temperature. In some embodiments, the electronic device 100 performs a temperature processing strategy using the temperature detected by the temperature sensor 180J. For example, when the temperature reported by temperature sensor 180J exceeds a threshold, electronic device 100 performs a reduction in the performance of a processor located in the vicinity of temperature sensor 180J in order to reduce power consumption to implement thermal protection. In other embodiments, when the temperature is below another threshold, the electronic device 100 heats the battery 142 to avoid the low temperature causing the electronic device 100 to be abnormally shut down. In other embodiments, when the temperature is below a further threshold, the electronic device 100 performs boosting of the output voltage of the battery 142 to avoid abnormal shutdown caused by low temperatures.

The touch sensor 180K, also referred to as a "touch device". The touch sensor 180K may be disposed on the display screen 194, and the touch sensor 180K and the display screen 194 form a touch screen, which is also called a "touch screen". The touch sensor 180K is for detecting a touch operation acting thereon or thereabout. The touch sensor may communicate the detected touch operation to the application processor to determine the touch event type. Visual output related to touch operations may be provided through the display 194. In other embodiments, the touch sensor 180K may also be disposed on the surface of the electronic device 100 at a different location than the display 194.

The bone conduction sensor 180M may acquire a vibration signal. In some embodiments, bone conduction sensor 180M may acquire a vibration signal of a human vocal tract vibrating bone pieces. The bone conduction sensor 180M may also contact the pulse of the human body to receive the blood pressure pulsation signal. In some embodiments, bone conduction sensor 180M may also be provided in a headset, in combination with an osteoinductive headset. The audio module 170 may analyze the voice signal based on the vibration signal of the sound portion vibration bone block obtained by the bone conduction sensor 180M, so as to implement a voice function. The application processor may analyze the heart rate information based on the blood pressure beat signal acquired by the bone conduction sensor 180M, so as to implement a heart rate detection function.

The keys 190 include a power-on key, a volume key, etc. The keys 190 may be mechanical keys. Or may be a touch key. The electronic device 100 may receive key inputs, generating key signal inputs related to user settings and function controls of the electronic device 100.

The motor 191 may generate a vibration cue. The motor 191 may be used for incoming call vibration alerting as well as for touch vibration feedback. For example, touch operations acting on different applications (e.g., photographing, audio playing, etc.) may correspond to different vibration feedback effects. The motor 191 may also correspond to different vibration feedback effects by touching different areas of the display screen 194. Different application scenarios (such as time reminding, receiving information, alarm clock, game, etc.) can also correspond to different vibration feedback effects. The touch vibration feedback effect may also support customization.

The indicator 192 may be an indicator light, may be used to indicate a state of charge, a change in charge, a message indicating a missed call, a notification, etc.

The SIM card interface 195 is used to connect a SIM card. The SIM card may be inserted into the SIM card interface 195, or removed from the SIM card interface 195 to enable contact and separation with the electronic device 100. The electronic device 100 may support 1 or N SIM card interfaces, N being a positive integer greater than 1. The SIM card interface 195 may support Nano SIM cards, micro SIM cards, and the like. The same SIM card interface 195 may be used to insert multiple cards simultaneously. The types of the plurality of cards may be the same or different. The SIM card interface 195 may also be compatible with different types of SIM cards. The SIM card interface 195 may also be compatible with external memory cards. The electronic device 100 interacts with the network through the SIM card to realize functions such as communication and data communication. In some embodiments, the electronic device 100 employs esims, i.e.: an embedded SIM card. The eSIM card can be embedded in the electronic device 100 and cannot be separated from the electronic device 100.

In this embodiment, the electronic device 100 is installed with a burn-in test program, and the internal memory 121 of the electronic device or the memory in the processor 110 may be provided with a plurality of memory partitions, where each memory partition stores an image file, and the image file may provide the electronic device with all contents for running the burn-in test program, such as instruction codes, a library when running the program, environment variables, and configuration files, including a size of an operating voltage specifying a storage medium (the storage medium may be the internal memory 121 or the memory in the processor 110) when running the burn-in test program. The image files of each storage partition are different from other image files in the size of the working voltage specified by the storage medium, and in a specific test process, a user can select the image files in the corresponding storage partition to perform one or more ageing tests on the storage value through user operation according to the test requirements. The memory of the electronic equipment is subjected to more severe aging test through a plurality of mirror image files with different versions, so that memory particles with poor quality can be forced to show quality defects as early as possible in the aging test process, and the memory particles with poor quality can be screened and removed before the product is sold, so that the failure rate of the electronic equipment in the use process of a user after the electronic equipment is sold is reduced, and the probability of returning the electronic equipment to the commodity by the user after the electronic equipment is sold is also reduced.

Optionally, when the electronic device 100 is turned off due to abnormal storage medium, the electronic device 100 may further change the operating voltage of the memory of the electronic device 100 by using the image files in the plurality of storage partitions, so as to improve the stability of the electronic device 100 during the subsequent use process of the user. Specifically, after the electronic device 100 is abnormally restarted, the electronic device 100 may identify whether the cause of the abnormal restart is related to the memory abnormality. If yes, the electronic equipment can display a corresponding user interface after restarting so that a user can randomly select a corresponding voltage item and change the working voltage of the memory by using an image file corresponding to the voltage item.

In addition, optionally, the electronic device 100 stores a burn-in test program, where the burn-in test program includes a configuration file, and the configuration file may be received by another terminal (e.g., a PC terminal), and the voltage item required in the burn-in test may be rewritten on the terminal and then stored in the burn-in test program of the test terminal again.

Next, a test method provided in the present application is described. According to the testing method, more severe aging tests are carried out on the memory of the electronic equipment through the image files with different versions, so that memory particles with poor quality can be forced to show quality defects as early as possible in the aging test process, a manufacturer can conveniently screen and reject the memory particles with poor quality before selling the products, the failure rate of the electronic equipment in the use process of a user after being sold is reduced, and the probability of returning the electronic equipment to the commodity by the user after being sold is also reduced. As shown in fig. 9, the test method includes the steps of:

s101, the electronic equipment determines a first storage partition from at least two storage partitions according to the test requirement of a user.

The electronic device may be a mobile phone (mobile phone), a vehicle-mounted device (e.g., on Board Unit (OBU)), a tablet (pad), a computer with a display function (e.g., a notebook computer, a palm computer, etc.), etc. Specifically, the electronic device may be the electronic device 100 provided in the embodiments of the present application. It is understood that the present application is not limited to the specific form of the electronic device described above.

It should be understood that, in the method, the aging test is performed on the storage medium (i.e., the memory) in the electronic device, and the at least two memory partitions may be stored in the memory of the electronic device, where the memory and the memory to be tested may be the same memory or different memories (taking the electronic device 100 as an example, the memory where the at least two memory partitions are located may be the memory in the processor 110 of the electronic device 100, and the memory to be detected is the internal memory 121 of the electronic device 100), which is not limited in this application.

The voltage values configured for the storage medium by the image files in any two storage partitions in the at least two storage partitions are different. That is, any one of the at least two storage partitions stores an image file, and the image file may have any one of iso, bin, img, tao, gho, and other formats, which are not limited in this application; the image file in any one of the at least two memory partitions may provide the electronic device with all content for running the burn-in test program, such as instruction code, libraries at run-time, environment variables, and configuration files.

Optionally, the first image file in the first storage partition is configured to configure VDDQ of the storage medium to a first limit low voltage, and configure VDD2 of the storage medium to a second limit low voltage, where the first limit low voltage is smaller than a first voltage and a difference from the first voltage is greater than a first threshold, and the second limit low voltage is smaller than a second voltage and a difference from the second voltage is greater than the first threshold, and the first voltage is a rated voltage corresponding to VDDQ of the storage medium, and the second voltage is a rated voltage corresponding to VDD2 of the storage medium.

Optionally, the at least two memory partitions further include a second memory partition, where a second image file in the second memory partition is configured to configure VDDQ of the storage medium to a first limit high voltage, and configure VDD2 of the storage medium to a second limit high voltage, where the first limit high voltage is greater than a first voltage and a difference from the first voltage value is greater than a second threshold, and the second limit high voltage is greater than a second voltage and a difference from the second voltage value is greater than the second threshold, and the first voltage is a rated voltage corresponding to VDDQ of the storage medium, and the second voltage is a rated voltage corresponding to VDD2 of the storage medium.

It should be understood that the memory of the electronic device is configured with a limit test voltage value that is significantly higher and/or significantly lower than a conventional voltage value, so as to perform a more severe burn-in test on the memory particles in the memory (e.g., DDR), so that the memory particles with poor quality can be forced to show quality defects as early as possible in the burn-in test process, and the memory particles with poor quality can be screened and removed before the product is sold, so as to reduce the failure rate of the electronic device during the use process of the user after the electronic device is sold, and also reduce the probability of the electronic device being returned by the user after the electronic device is sold.

Specifically, in the method, the operating voltage determined for the storage medium by the image file of each of the at least two storage partitions is different. For example, taking three memory partitions as an example, the image file of the first of the three partitions may be used to configure the operating voltage of the memory to be the default voltage; for example, VDDQ and VDD2 of the memory are configured to vddq=600 mV and vdd2=1128 mV, respectively; the image file of the second partition (which may be the first storage partition described above) may be used to configure the operating voltage of the memory to a default voltage; for example, VDDQ and VDD2 of the memory are configured to vddq=600 mV and vdd2=1128 mV, respectively; the image file of the third partition (which may be the second storage partition) may be used to configure the operating voltage of the memory to a default voltage; VDDQ and VDD2 of the memory are configured to vddq=600 mV and vdd2=1128 mV, respectively, for example. When the aging test is performed on the memory, the electronic device can call the image files in the corresponding memory partition according to specific requirements and operations of a user to complete the aging test.

Optionally, in order to determine the first storage partition, the electronic device may display a first user interface, where the first user interface includes at least two voltage value options, where the at least two voltage value options correspond to the at least two storage partitions, and the at least two voltage value options include a first voltage option, where the first voltage option corresponds to the first storage partition; when the user performs the user operation on the first voltage option, the electronic device can determine the first storage partition corresponding to the first voltage option. Reference may be made specifically to the foregoing description of fig. 5, and details thereof are not repeated here.

S102, the electronic equipment writes the first image file in the first storage partition into a target storage partition, and performs aging test on the storage medium based on the first image file in the target storage partition.

After determining the first storage partition, the electronic device may write the first image file to the target storage partition. It should be understood that, when performing the burn-in test, the electronic device obtains the image file in the target storage partition by directly accessing the target storage partition, and configures a responsive test environment for the burn-in test process based on the image file. Therefore, for each aging test, after the electronic device determines the corresponding storage partition according to the requirement of the user, the electronic device can brush the image file in the storage partition into the target storage partition.

Specifically, after the first image file stored in the first storage partition is written to the target storage partition, the electronic device may automatically restart, and after restarting, the working voltage of the storage medium is configured to be a voltage value corresponding to the first image file according to the first image file in the target storage partition; and then, under the condition that the working voltage of the storage medium is the voltage value corresponding to the first image file, the electronic equipment can detect the performance of each memory particle in the storage medium to obtain an aging test result.

In addition, in a specific aging test process, because the performance advantages and disadvantages of the memory particles under the environments of different voltages may be different, the electronic device may respectively brush the image files in the at least two memory partitions into the target memory partition under the operation of a user, that is, perform multiple aging tests on the memory by adopting different voltage values, so as to ensure that the memory particles with poor quality in the memory can be more accurately selected; that is, after the burn-in test is completed by using the image in a certain partition, the electronic device may further select the image file in a different storage partition according to the user operation to perform the next burn-in test. Of course, in order to save time and cost, the electronic device may also only select the image files in one or more of the at least two memory partitions to complete the aging test on the memory, for example, only perform the aging test on the memory in the environment of a low limit voltage, or only perform the aging test on the memory in the environment of a high limit voltage.

Based on the aging test method and the electronic device mentioned in the foregoing description, the present application further provides a method for adjusting the working voltage of the memory, where the method can utilize the image file in the electronic device to change the working voltage of the memory of the electronic device when the electronic device is turned off due to abnormal storage medium, so as to improve the stability of the electronic device in the subsequent use process of the user. As shown in fig. 10, the method for adjusting the operating voltage of the memory may include the steps of:

S201, the electronic equipment is restarted.

S202, judging whether the abnormal restart is related to the abnormality of the storage medium.

It should be understood that the storage medium (i.e., the memory) in the electronic device has a plurality of storage partitions, and that the image files in any two storage partitions of the storage partitions have different voltage values configured for the storage medium. The image files in any one of the memory partitions may provide the electronic device with all the contents for running the burn-in test program, such as instruction code, libraries when running the program, environment variables, and configuration files.

When the user uses the electronic equipment, the electronic equipment is restarted abnormally, and the electronic equipment records the abnormal error type before restarting; for example PANIC, AOP, DDR, TZ, where "DDR" means that the electronic device is restarted because of a storage medium anomaly.

S203, outputting prompt information to prompt a user whether to agree to adjust the working voltage of the storage medium.

When the electronic device is abnormally restarted, the electronic device can output prompt information to inquire whether the user agrees to try to change the voltage of the storage medium to improve the operation condition of the electronic device after identifying whether the reason of the abnormal restarting is related to the abnormal memory. If the user agrees, the electronic device may directly execute the following steps S204-S206; if the user does not agree, ending the flow of the method.

S204, displaying a second user interface under the condition that the user agrees to adjust the voltage of the storage medium, and determining a corresponding storage partition according to the user operation.

S205, reading the image file in the corresponding storage partition, and brushing the image file to the target storage partition.

S206, restarting the electronic equipment.

The details of steps S204 to S206 may refer to the foregoing description of fig. 6, and will not be repeated here.

The embodiment of the application also provides electronic equipment, which comprises: one or more processors and memory; wherein a memory is coupled to the one or more processors, the memory for storing computer program code comprising computer instructions that the one or more processors call to cause the electronic device to perform the method shown in the previous embodiments.

As used in the above embodiments, the term "when …" may be interpreted to mean "if …" or "after …" or "in response to determination …" or "in response to detection …" depending on the context. Similarly, the phrase "at the time of determination …" or "if detected (a stated condition or event)" may be interpreted to mean "if determined …" or "in response to determination …" or "at the time of detection (a stated condition or event)" or "in response to detection (a stated condition or event)" depending on the context.

In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, produces a flow or function in accordance with embodiments of the present application, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a computer network, or other programmable apparatus. The computer instructions may be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by a wired (e.g., coaxial cable, fiber optic, digital subscriber line), or wireless (e.g., infrared, wireless, microwave, etc.). The computer readable storage medium may be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that contains an integration of one or more available media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid state disk), etc.

Those of ordinary skill in the art will appreciate that implementing all or part of the above-described method embodiments may be accomplished by a computer program to instruct related hardware, the program may be stored in a computer readable storage medium, and the program may include the above-described method embodiments when executed. And the aforementioned storage medium includes: ROM or random access memory RAM, magnetic or optical disk, etc.

Claims

1. A method of testing, comprising:

determining a first storage partition from at least two storage partitions according to the test requirement of a user, wherein the voltage values configured by mirror files in any two storage partitions in the at least two storage partitions for storage media are different; the first image file in the first storage partition is used for configuring VDDQ of the storage medium as a first limit low voltage, and configuring VDD2 of the storage medium as a second limit low voltage, wherein the first limit low voltage is smaller than a first voltage value and a difference value between the first voltage value and the first voltage value is larger than a first threshold value, the second limit low voltage is smaller than a second voltage value and a difference value between the second voltage value and the second voltage value is larger than the first threshold value, the first voltage value is a rated voltage corresponding to VDDQ of the storage medium, the second voltage value is a rated voltage corresponding to VDD2 of the storage medium, the VDDQ represents an output buffer supply voltage of the storage medium, and the VDD2 represents an input buffer and a supply voltage of core logic of the storage medium;

And brushing the first image file in the first storage partition to a target storage partition, and performing aging test on the storage medium based on the first image file in the target storage partition.

2. The method of claim 1, wherein the at least two memory partitions further comprise a second memory partition,

the second image file in the second storage partition is configured to configure VDDQ of the storage medium to a first limit high voltage, and configure VDD2 of the storage medium to a second limit high voltage, where the first limit high voltage is greater than the first voltage value and a difference from the first voltage value is greater than a second threshold, and the second limit high voltage is greater than the second voltage value and a difference from the second voltage value is greater than the second threshold, and the first voltage value is a rated voltage corresponding to VDDQ of the storage medium, and the second voltage value is a rated voltage corresponding to VDD2 of the storage medium.

3. The method according to claim 1 or 2, wherein determining a first memory partition from at least two memory partitions according to a test requirement of a user comprises:

displaying a first user interface, wherein the first user interface comprises at least two voltage value options, the at least two voltage value options correspond to the at least two storage partitions, the at least two voltage value options comprise a first voltage option, and the first voltage option corresponds to the first storage partition;

And responding to the user operation of the first voltage option, and determining the first storage partition corresponding to the first voltage option.

4. The method of any of claims 1-3, wherein the swiping a first image file stored in the first storage partition to a target storage partition, performing an aging test on the storage medium based on the first image file in the target storage partition, comprises:

brushing a first image file stored in the first storage partition to a target storage partition;

after restarting the electronic equipment, configuring the working voltage of the storage medium into a voltage value corresponding to the first image file according to the first image file in the target storage partition, wherein the storage medium is the storage medium in the electronic equipment, and the restarting is used for changing the VDDQ and VDD2 provided by the electronic equipment for the storage medium from rated voltage values into voltage values corresponding to the first image file;

and under the condition that the working voltage of the storage medium is the voltage value corresponding to the first image file, detecting the performance of each memory particle in the storage medium to obtain an aging test result.

5. A method for adjusting an operating voltage of a storage medium, the method being applied to an electronic device, a first storage partition and at least one second storage partition exist in a storage medium of the electronic device, a first image file in the first storage partition is used for configuring the operating voltage of the storage medium to be a rated operating voltage, an image file in any one of the at least one second storage partition is used for updating the operating voltage of the storage medium, and an operating voltage corresponding to the image file in any one of the at least one second storage partition is different from the rated operating voltage, the method comprising:

displaying a second user interface under the condition that the electronic equipment is restarted due to the abnormal storage medium, wherein the second user interface comprises at least one voltage option, and the at least one voltage value option corresponds to the at least one second storage partition;

and responding to the user operation of the user on a first voltage option in the at least one voltage option, determining a storage partition corresponding to the first voltage option, and adjusting the working voltage of the storage medium based on the image file in the storage partition corresponding to the first voltage option.

6. An electronic device, the electronic device comprising: one or more processors, memory, and a display screen;

the memory is coupled with the one or more processors, the memory for storing computer program code comprising computer instructions that the one or more processors invoke to cause the electronic device to perform the method of any of claims 1-5.

7. A chip system for application to an electronic device, the chip system comprising one or more processors for invoking computer instructions to cause the electronic device to perform the method of any of claims 1-5.

8. A computer readable storage medium comprising instructions which, when run on an electronic device, cause the electronic device to perform the method of any one of claims 1-5.