CN115505932A - Tungsten chemical mechanical polishing solution and application thereof - Google Patents

Tungsten chemical mechanical polishing solution and application thereof Download PDF

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CN115505932A
CN115505932A CN202211087131.9A CN202211087131A CN115505932A CN 115505932 A CN115505932 A CN 115505932A CN 202211087131 A CN202211087131 A CN 202211087131A CN 115505932 A CN115505932 A CN 115505932A
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chemical mechanical
mechanical polishing
aldehyde
polishing solution
tungsten chemical
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CN115505932B (en
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王瑞芹
崔晓坤
卞鹏程
王庆伟
徐贺
李国庆
王永东
卫旻嵩
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Wanhua Chemical Group Electronic Materials Co ltd
Wanhua Chemical Group Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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Abstract

The invention discloses a tungsten chemical mechanical polishing solution and application thereof. The rate inhibitor can generate Schiff base with aldehyde compound, and the Schiff base bond is sensitive to temperature, so that the unevenness of the polished surface can be adjusted, and the quality of the polished surface can be improved.

Description

Tungsten chemical mechanical polishing solution and application thereof
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to tungsten chemical mechanical polishing solution and application thereof.
Background
With the gradual reduction of the size of semiconductor devices and the increasing number of metal layers, the chemical mechanical polishing technology of metal layers and insulating dielectric layers becomes more critical.
In Chemical Mechanical Polishing (CMP), the top surface of a substrate is brought into direct contact with a polishing pad and rotated under pressure relative to the pad, while an abrasive-containing mixture (commonly referred to as slurry) is applied to the pad surface, and planarization of the substrate surface is accomplished by the chemical etching of the slurry and the mechanical action of the abrasive.
It is known that in the polishing process of a metal layer, a Metal Oxide (MO) with low hardness is generally formed on the surface of the metal layer by an oxidizing agent x ) Then mechanically removing the oxide layer by the grinding action of the abrasive, generating a new metal surface which is continuously oxidized, and repeating the process until the polishing is finished.
Tungsten, which is one of the objects of Chemical Mechanical Polishing (CMP), has strong electromigration resistance at high current density, excellent hole-filling ability, and can form a good ohmic contact with silicon, and thus can be used as a metal-filling and diffusion barrier layer for contact windows and via holes.
The chemical mechanical polishing method of tungsten at present mainly oxidizes the surface of metal tungsten through Fenton reaction, as shown in formulas (1), (2) and (3), and then removes a soft oxidation film through mechanical grinding.
H 2 O 2 +Fe 3+ ＝Fe 2+ +O 2 +2H + (1)
Fe 3+ +H 2 O 2 ＝Fe 2+ +OH - +OH· (2)
6OH·+W+6H + ＝3H 2 O+WO 3 (3)
The Fenton reaction is very violent, so that the polishing disc and the polished wafer generate obvious temperature rise, and the temperature can rise to 50-70 ℃ within 60 seconds of polishing time. In actual polishing, the temperature of the edge portion of the wafer is low because the continuous supply of the polishing liquid has a cooling effect while performing the polishing function, and the closer to the center of the wafer, the more the generated heat is hard to be taken away by the new polishing liquid, the higher the temperature is than that of the edge, and therefore, a large temperature difference is generated between the center and the edge of the wafer. It is known that the fenton reaction has a faster reaction speed at a high temperature, which results in that in metal polishing, the polishing rate often shows a tendency of a fast center and a slow edge, so that the polished surface is very uneven, and NU (non-uniformity) is very large.
The U.S. Pat. Nos. 10676647, 9631122 and 9238754 utilize amino acid, cationic ammonium isorate inhibitors to reduce static corrosion of the tungsten sheet being polished, but their polishing rates are very low and are difficult to apply for bulk removal of tungsten material. The US patents US6083419 and US9771496 also investigated rate inhibitors, but do not mention polishing rate and surface irregularities. The US patent 2019085209 uses polyamino acids as rate inhibitors, which can achieve high polishing rates (3000A/min) and very low static corrosion, but it is also not studied for NU, and the amount of polyamino acids added is only 25ppm, and it is known that too small an amount of addition results in uneven distribution of the auxiliary agent on the surface to be polished, leading to poor surface quality, and even more so in the case of polymers used in the patent.
Therefore, a new tungsten chemical mechanical polishing solution is needed, which can automatically adjust the polishing rate according to the temperature of the polishing disk/polishing surface while having a higher polishing rate, and improve the difference between the polishing rates of the edge and the center, thereby realizing the flat polishing of the wafer and improving the surface quality.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a novel tungsten chemical mechanical polishing solution, which can reduce the difference between the edge speed and the central speed of a polished surface, realize the flat polishing of a wafer and further greatly improve the surface quality.
The invention also aims to provide the application of the tungsten chemical mechanical polishing solution in tungsten chemical mechanical polishing.
In order to realize the purpose, the invention adopts the following technical scheme:
a tungsten chemical mechanical polishing solution comprises a silicon dioxide abrasive, an iron salt catalyst, an oxidant, a stabilizer, a rate inhibitor, an aldehyde compound and water; wherein the rate inhibitor is a small molecule nitrogen-containing compound containing a primary amine group; preferably, the rate inhibitor is at least any one of an α -amino acid other than proline, a nitrogen-containing heterocycle having a primary amine group, an aliphatic or aromatic primary amine.
In a preferred embodiment, the tungsten chemical mechanical polishing solution comprises, by mass, 1-10% of silica abrasive, 0.001-0.1% of iron salt catalyst, 1.5-2.5% of oxidizing agent, 0.01-0.2% of stabilizing agent, 0.005-0.2% of rate inhibitor, 0.0001-0.1% of aldehyde compound, and the balance of water.
In a preferred embodiment, the tungsten chemical mechanical polishing solution comprises, by mass, 1-5% of a silica abrasive, 0.01-0.1% of an iron salt catalyst, 2.0% of an oxidizing agent, 0.05-0.2% of a stabilizer, 0.01-0.2% of a rate inhibitor, 0.005-0.1% of an aldehyde compound, and the balance of water.
In a specific embodiment, the rate inhibitor is an alpha-amino acid other than proline, preferably the alpha-amino acid is selected from one or more of glycine, alanine, glutamic acid, leucine, tyrosine, serine, histidine, valine, lysine or arginine, more preferably the alpha-amino acid is selected from one or both of glycine or lysine.
In a specific embodiment, the rate inhibitor is a nitrogen-containing heterocyclic ring with a primary amine group, and preferably, the rate inhibitor is selected from one or more of 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 5-amino-1H-tetrazole, 2-aminomethyl pyridine, 4-aminopyridine, 2-aminopyrimidine, adenine or N-aminoethyl piperazine.
In a specific embodiment, the rate inhibitor is aliphatic or aromatic primary amine, preferably, the rate inhibitor is selected from one or more of diethylenetriamine, tetraethylenepentamine, pentaethylenehexamine, octylamine, dodecylamine, ethylenediamine or aniline.
In a specific embodiment, the aldehyde-based compound is not limited, and may be a small molecule aldehyde having a molecular weight of 2000 daltons or less, such as any one preferably selected from octanal, laurnal, myristyl aldehyde, nonadienal, methylcitral, vanillin, pyridoxal, lilac aldehyde, citral, and the like; the macromolecular aldehydes have a molecular weight above 2000 daltons and are preferably selected, for example, from polymers of unsaturated aldehydes, such as poly citral, poly nonadienal, dextran oxide, and the like. Preferably, the aldehyde is not selected from formaldehyde, glyoxal and other aldehydes with higher biological toxicity.
Figure BDA0003835577860000041
The primary amine group of the rate inhibitor and the aldehyde group of the aldehyde-based compound may undergo a schiff base reaction as shown in formula (4) to generate a schiff base bond C = N. The reaction is a reversible reaction, the reaction balance is very sensitive to temperature, at low temperature, the reaction balance moves to the right, more rate inhibitors and aldehyde form Schiff base, the rate inhibition activity is greatly reduced, and the polishing rate is kept at a higher level; when the temperature rises, the reaction balance moves to the left, the rate inhibitor is released, the inhibition efficiency of the polishing rate can be improved, the rate difference caused by the temperature difference is reduced, and the polishing smoothness is improved.
In a particular embodiment, the silica abrasive is a silica sol or fumed silica, preferably the silica abrasive is a silica sol.
In a specific embodiment, the iron salt catalyst is an iron salt capable of ionizing iron ions in an aqueous solution, and the anion of the iron salt is not limited and can be organic anions such as citrate, oxalate, gluconate, phthalate and the like, and can also be inorganic anions such as nitrate, sulfate and the like; the iron salt is preferably ferric nitrate.
In a specific embodiment, the stabilizer is an organic acid, preferably, the organic acid is selected from one or more of oxalic acid, malonic acid, succinic acid, citric acid and tartaric acid, and more preferably, malonic acid.
In a specific embodiment, the oxidizing agent is hydrogen peroxide; preferably, the pH of the tungsten chemical mechanical polishing solution is 2.0-2.5.
In another aspect of the present invention, the tungsten chemical mechanical polishing solution is used for tungsten chemical mechanical polishing.
By adopting the technical scheme, the invention can obtain the following beneficial effects:
1) The activity of the rate inhibitor can be adjusted by temperature by utilizing the dynamic bond characteristic of the Schiff base bond, and the polishing rate difference caused by the temperature difference between the center and the edge of the polished wafer is reduced, so that the surface flatness and uniformity after polishing are improved;
2) The rate inhibitor has stronger activity at high temperature, inhibits the violent static corrosion of tungsten at high temperature, and improves the surface quality of the polished wafer.
3) The polishing speed is fast enough while the above two points are realized, and the requirement of removing a large amount of tungsten materials can be met.
Detailed Description
The following examples will further illustrate the method provided by the present invention in order to better understand the technical solution of the present invention, but the present invention is not limited to the listed examples, and should also include any other known modifications within the scope of the claims of the present invention.
A tungsten chemical mechanical polishing solution comprises 1-10% of silicon dioxide abrasive, 0.001-0.1% of iron salt catalyst, 2.0% of oxidant, 0.01-0.2% of stabilizer, 0.005-0.2% of rate inhibitor, 0.001-0.1% of aldehyde compound and the balance of water by mass percentage; wherein the rate inhibitor is a small molecule nitrogen-containing compound containing a primary amine group. Preferably, the tungsten chemical mechanical polishing solution comprises 1-5% of silicon dioxide abrasive, 0.01-0.1% of iron salt catalyst, 2.0% of oxidant, 0.05-0.2% of stabilizer, 0.01-0.2% of rate inhibitor, 0.005-0.1% of aldehyde compound and the balance of water.
Specifically, the rate inhibitor is an α -amino acid other than proline, a nitrogen-containing heterocycle having a primary amine group, or an aliphatic or aromatic primary amine. The alpha-amino acid is selected from one or more of glycine, alanine, glutamic acid, leucine, tyrosine, serine, histidine, valine, lysine or arginine, but not limited thereto, and more preferably, the alpha-amino acid is selected from one or more of glycine or lysine. The nitrogen-containing heterocycle with primary amine group is selected from one or more of 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 5-amino-1H-tetrazole, 2-aminomethyl pyridine, 4-aminopyridine, 2-aminopyrimidine, adenine or N-aminoethyl piperazine, but is not limited thereto. The aliphatic or aromatic primary amine is selected from one or more of diethylenetriamine, tetraethylenepentamine, pentaethylenehexamine, octylamine, dodecylamine, ethylenediamine or aniline, but is not limited thereto.
Specifically, the aldehyde-based compound is not limited, and may be a small molecule aldehyde or a large molecule aldehyde as long as the aldehyde-based compound contains an aldehyde group, and the molecular weight of the small molecule aldehyde is less than 2000 daltons, and is selected from, but not limited to, octanal, laurnal, myristyl aldehyde, nonadienal, methylcitral, vanillin, pyridoxal, lilac aldehyde, citral, and the like; the molecular weight of the macromolecular aldehyde is above 2000 daltons, and is selected from, for example, polymers of unsaturated aldehydes, such as, but not limited to, poly citral, poly nonadienal, dextran oxide, and the like. Preferably, the aldehyde-based compound is not selected from aldehydes with higher biological toxicity such as formaldehyde and glyoxal, but it should be noted that aldehydes with higher biological toxicity such as formaldehyde and glyoxal can also be used in the present invention, but are not preferred because of their biological toxicity.
The rate inhibitor is present in an amount of 0.005 to 0.2%, for example including but not limited to 0.005%, 0.01%, 0.03%, 0.05%, 0.07%, 0.1%, 0.15%, 0.2%, preferably 0.01 to 0.2%; the aldehyde-based compound is contained in an amount of 0.001 to 0.1%, including, for example, but not limited to, 0.001%, 0.003%, 0.005%, 0.007%, 0.01%, preferably 0.005 to 0.1%.
The silica abrasive is silica sol or fumed silica, preferably silica sol, and the addition amount of the silica abrasive is generally 1-10% of the total mass of the polishing solution, such as but not limited to 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, preferably, the addition amount of the silica abrasive is 1-5% of the total mass of the polishing solution.
The silica sol has a particle size of 40-200nm, preferably 60-120nm, and may be any qualified silica sol, such as those available from Nissan Chemical, fuso, dupont, bayer, etc., and is preferably selected from PL-3, PL-5, or PL-7 (particle sizes of 70, 100, and 120nm, respectively) from Fuso.
The iron salt catalyst is generally added in an amount of 0.001% to 0.1% by mass of the total polishing solution, for example, including but not limited to 0.001%, 0.005%, 0.01%, 0.05%, 0.07%, 0.1%, and preferably, the iron salt catalyst is added in an amount of 0.01% to 0.1% by mass of the total polishing solution.
The oxidizing agent is typically hydrogen peroxide, and is typically added in an amount of 2.0%, typically separately before use, to avoid premature decomposition. Wherein the pH of the tungsten chemical mechanical polishing solution is adjusted to 2.0-2.5 by nitric acid or potassium hydroxide.
The invention is further illustrated, but not limited, by the following more specific examples.
Table 1 shows the components and contents of the tungsten polishing solutions of comparative examples 1-3 and examples 1-12 of the present invention, according to Table 1, the chemical mechanical polishing solutions were prepared by simply stirring and mixing, after mixing uniformly, the pH value was adjusted to 2.0-2.5 with nitric acid or KOH, hydrogen peroxide was added before use, mixing uniformly, and the balance was made up with water, thus obtaining the examples and comparative examples of the present invention.
TABLE 1 ingredient tables of polishing solutions for comparative examples 1 to 3 and examples 1 to 12
Figure BDA0003835577860000081
To verify the polishing effect of the polishing solutions of the present invention, the polishing solutions of comparative examples 1 to 3 and examples 1 to 12 were polished.
The polishing conditions were as follows: the polishing machine is a Mirra polishing machine, the polishing pad is IC1010, the polishing pressure is 4.2psi, the rotating speed of the polishing head and the polishing disc is 93/87rpm, the flow rate of the polishing solution is 100mL/min, and the polishing time is 60s.
And respectively testing the conductivity of the tungsten Wafer by using a four-probe conductivity meter before and after polishing, selecting a 'Half-Wafer Mapping' mode, and measuring 49 points on a Wafer X axis so as to calculate the thickness of the tungsten Wafer before and after polishing, wherein the tungsten polishing rate is obtained by dividing the thickness difference of the tungsten Wafer before and after polishing by the polishing time. The non-uniformity (NU) of a tungsten wafer after polishing is calculated from equation (5), where σ MRR The MRR is an average of 49 point polishing rates as a standard deviation of the polishing rate. The maximum difference in polishing rates at 49 points was calculated and named Range. And detecting the roughness of the surface of the polished tungsten WAFER by adopting a Park NX-WAFER atomic force microscope, wherein the detection range is 10 multiplied by 10 mu m, and the final result is the average value of three tests of center, middle and edge. The results are shown in Table 2.
NU＝σ MRR /MRR (5)
TABLE 2 polishing effects of comparative examples 1 to 3 and examples 1 to 12
Polishing liquid MRR(A/min) NU(％) Range(A) Roughness (nm)
Comparative example 1 1012 5.89 679 2.37
Comparative example 2 997 6.02 556 2.06
Comparative example 3 6218 12.63 1897 7.49
Example 1 3521 2.75 358 1.083
Example 2 3587 2.53 319 0.861
Example 3 3614 2.66 291 1.113
Example 4 3698 3.25 399 10.88
Example 5 3634 3.65 260 1.182
Example 6 3640 2.62 267 0.891
Example 7 3590 2.86 258 0.970
Example 8 3634 3.27 392 0.908
Example 9 3554 3.39 287 0.944
Example 10 3604 3.37 260 0.957
Example 11 3675 3.19 257 0.842
Example 12 3597 2.87 276 0.954
As shown in Table 2, comparative example 3, in which no rate inhibitor was added, resulted in an uncontrollable polishing rate, a fast average MRR, but a very poor NU and roughness, and a maximum Range of polishing rates, indicating that the rates of tungsten wafers being polished varied widely from location to location. The polishing performance of comparative examples 1 and 2 is much better than that of comparative example 3 because the rate inhibitor reduces static corrosion and improves surface quality while reducing polishing rate, but Range and roughness are still at a higher level, and the polishing rate is too low to meet the requirement of bulk tungsten polishing because the rate inhibitor has very high activity. When the aldehyde-based compound is added on the basis of the rate inhibitor, as in examples 1 to 12, the activity of a part of the rate inhibitor is inhibited during polishing, and the average polishing rate is improved. Meanwhile, due to the temperature sensitivity of Schiff base bonds formed by the rate inhibitor and the aldehyde-based compound, range is greatly reduced, which shows that the polishing rates of different areas of the tungsten wafer are approximately consistent, so that NU and roughness are synchronously reduced, and the polishing performance reaches an excellent standard.
In conclusion, the tungsten polishing solution disclosed by the invention has the advantages of controllable polishing rate, high polishing flatness and small surface roughness when being applied to the chemical mechanical polishing of tungsten-containing wafers, so that the tungsten wafers have good surface quality after being polished.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. It will be appreciated by those skilled in the art that modifications or adaptations to the invention may be made in light of the teachings of the present specification. Such modifications or adaptations are intended to be within the scope of the present invention as defined in the claims.

Claims (11)

1. The tungsten chemical mechanical polishing solution is characterized by comprising a silicon dioxide abrasive, an iron salt catalyst, an oxidant, a stabilizer, a rate inhibitor, an aldehyde compound and water; wherein the rate inhibitor is a small molecule nitrogen-containing compound containing a primary amine group; preferably, the rate inhibitor is at least any one of an α -amino acid other than proline, a nitrogen-containing heterocycle having a primary amine group, an aliphatic or aromatic primary amine.
2. The tungsten chemical mechanical polishing solution according to claim 1, comprising, by mass%, 1 to 10% of a silica abrasive, 0.001 to 0.1% of an iron salt catalyst, 1.5 to 2.5% of an oxidizing agent, 0.01 to 0.2% of a stabilizer, 0.005 to 0.2% of a rate inhibitor, 0.001 to 0.1% of an aldehyde compound, and the balance being water; preferably, the polishing agent comprises 1-5% of silicon dioxide abrasive, 0.01-0.1% of iron salt catalyst, 2.0% of oxidizing agent, 0.05-0.2% of stabilizing agent, 0.01-0.2% of rate inhibitor, 0.005-0.1% of aldehyde compound and the balance of water.
3. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the α -amino acid is selected from one or more of glycine, alanine, glutamic acid, leucine, tyrosine, serine, histidine, valine, lysine or arginine; preferably selected from one or both of glycine and lysine.
4. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the nitrogen-containing heterocycle having a primary amine group is one or more selected from 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 5-amino-1H-tetrazole, 2-aminomethylpyridine, 4-aminopyridine, 2-aminopyrimidine, adenine or N-aminoethylpiperazine.
5. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the aliphatic or aromatic primary amine is selected from one or more of diethylenetriamine, tetraethylenepentamine, pentaethylenehexamine, octylamine, dodecylamine, ethylenediamine or aniline.
6. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the aldehyde-based compound is a small-molecule aldehyde or a large-molecule aldehyde; preferably, the molecular weight of the small molecule aldehyde is below 2000 daltons, more preferably any one of caprylic aldehyde, lauric aldehyde, myristic aldehyde, nonadienal, methyl citral, vanillin, pyridoxal, lilial and citral; the molecular weight of the macromolecular aldehyde is more than 2000 daltons, more preferably selected from unsaturated aldehyde polymers, and further preferably selected from any one of poly citral, poly nonadienal and dextran oxide.
7. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the silica abrasive is silica sol or fumed silica; preferably, the oxidizing agent is hydrogen peroxide.
8. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the iron salt catalyst is an iron salt capable of ionizing iron ions in an aqueous solution; preferably ferric nitrate.
9. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the stabilizer is an organic acid; preferably one or more selected from oxalic acid, malonic acid, succinic acid, citric acid and tartaric acid; more preferably malonic acid.
10. The tungsten chemical mechanical polishing solution according to claim 1 or 2, wherein the pH of the tungsten chemical mechanical polishing solution is 2.0 to 2.5.
11. Use of the tungsten chemical mechanical polishing solution according to any one of claims 1 to 10 in tungsten chemical mechanical polishing.
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