CN115443548A - Magnetic tunnel junction and storage unit - Google Patents
Magnetic tunnel junction and storage unit Download PDFInfo
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- CN115443548A CN115443548A CN202080100135.9A CN202080100135A CN115443548A CN 115443548 A CN115443548 A CN 115443548A CN 202080100135 A CN202080100135 A CN 202080100135A CN 115443548 A CN115443548 A CN 115443548A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Hall/Mr Elements (AREA)
Abstract
A magnetic tunnel junction and a memory cell, the magnetic tunnel junction includes a first electrode layer (210), a first fixed magnetic layer (220), a tunneling insulating layer (230), a free magnetic layer (240), a capping layer (250), a second fixed magnetic layer (260), and a second electrode layer (270) which are sequentially stacked in a longitudinal direction, the first fixed magnetic layer (220) and the second fixed magnetic layer (260) each have a fixed magnetization direction, the magnetization direction of the first fixed magnetic layer (220) has a longitudinal component, and a component of the magnetization direction of the second fixed magnetic layer (260) in the longitudinal direction is opposite to a component of the magnetization direction of the first fixed magnetic layer (220) in the longitudinal direction, the free magnetic layer (240) has a perpendicular magnetic anisotropy property, such that, when a write current passes through the magnetic tunnel junction, the free magnetic layer (240) is subjected to two concurrent spin transfer torques from the first fixed magnetic layer (220) and the second fixed magnetic layer (260), having a higher current efficiency, and thus requiring a smaller switching current, thereby reducing write power consumption of the device.
Description
The present application relates to the field of semiconductor technology, and more particularly, to a magnetic tunnel junction and a memory cell.
A Magnetic Random Access Memory (MRAM) is a novel non-volatile magnetic random access memory, which has the characteristics of non-volatility, unlimited read/write durability, fast access time, low operating voltage, and the like, has the high-speed read/write capability of a Static Random Access Memory (SRAM), and the high integration of a Dynamic Random Access Memory (DRAM), and has good compatibility with a Complementary Metal Oxide Semiconductor (CMOS), and thus gradually receives wide attention.
The MRAM device may store information using a magnetic polarization direction change, and a basic memory cell thereof includes a Magnetic Tunnel Junction (MTJ) which may include a fixed magnetic layer, a tunneling insulating layer on the fixed magnetic layer, and a free magnetic layer on the tunneling insulating layer, wherein a magnetic property of the fixed magnetic layer is not changed, a magnetic property of the free magnetic layer is changed according to a write current, a resistance of the magnetic tunnel junction is minimized when magnetization directions of the fixed magnetic layer and the free magnetic layer are identical, and a resistance of the magnetic tunnel junction is maximized when the magnetization directions of the first magnetic layer and the second magnetic layer are different by 180 degrees, so that data may be judged to be 0 or 1 through a circuit design.
However, the current MRAM device has a large write current for changing the magnetic polarization direction of the free magnetic layer, which easily causes large write power consumption.
Disclosure of Invention
In view of the above, a first aspect of the present application provides a magnetic tunnel junction and a memory cell, which can reduce the write current of the device and reduce the write power consumption.
In a first aspect of the embodiments of the present application, a magnetic tunnel junction is provided, including a first electrode layer, a first fixed magnetic layer, a tunneling insulating layer, a free magnetic layer, a capping layer, a second fixed magnetic layer, and a second electrode layer, which are longitudinally stacked in sequence, where the first fixed magnetic layer and the second fixed magnetic layer each have a fixed magnetization direction, a component of the magnetization direction of the second fixed magnetic layer in the longitudinal direction is opposite to a component of the magnetization direction of the first fixed magnetic layer in the longitudinal direction, and the free magnetic layer has perpendicular magnetic anisotropy. That is, the magnetization direction of the free magnetic layer may be upward or downward, and the magnetization directions of the first and second fixed magnetic layers located at both sides of the free magnetic layer have opposite components in the longitudinal direction, so that when a write current passes through the magnetic tunnel junction, the free magnetic layer may be subjected to two co-directional spin transfer torques from the first and second fixed magnetic layers, which have higher current efficiency than that of a spin transfer torque from only the first fixed magnetic layer, and thus a smaller switching current is required, and thus a write current of the device may be reduced, reducing write power consumption.
As one possible embodiment, the second fixed magnetic layer includes a first perpendicular magnetization layer having a bulk perpendicular magnetic anisotropy energy.
In the embodiment of the present application, the second fixed magnetic layer may include the first perpendicular magnetization layer having the bulk perpendicular magnetic anisotropy energy, so that the magnetization direction of the second fixed magnetic layer is related to its own material, and is not related to the material of the adjacent film layer, thereby providing a reliable magnetic field and being suitable for more diverse scenes.
As a possible embodiment, the thickness of the first perpendicular magnetization layer is less than or equal to 10nm.
In the embodiment of the present application, the first perpendicular magnetization layer can have bulk perpendicular magnetic anisotropy energy, and therefore, a smaller film thickness can be realized, which is advantageous for reducing the device size.
As one possible embodiment, the first perpendicular magnetization layer is a rare earth-transition metal material having a bulk perpendicular magnetic anisotropy energy.
In the embodiment of the application, the first perpendicular magnetization layer can be made of a rare earth-transition metal material, has good bulk perpendicular magnetic anisotropy performance and can provide a reliable magnetic field.
As a possible embodiment, the rare earth-transition metal material is at least one of the following materials: cobalt terbium, terbium cobalt iron, iron palladium boron, cobalt gadolinium, cobalt iron gadolinium and cobalt chromium.
As one possible embodiment, the second fixed magnetic layer includes a first perpendicular magnetization layer which is a ferromagnetic metal material, and a longitudinal dimension of the first perpendicular magnetization layer is larger than a transverse dimension.
In the embodiment of the present application, the first perpendicular magnetization layer may be a ferromagnetic metal material, the perpendicular magnetic anisotropy of which can be provided by the structure of the first perpendicular magnetization layer, for example, the longitudinal dimension of the first perpendicular magnetization layer is larger than the transverse dimension to produce the magnetization direction in the longitudinal direction, and the thickness of the first perpendicular magnetization layer is larger to serve as a hard mask in the manufacturing process.
As a possible embodiment, the ferromagnetic metal material comprises at least one of the following materials: cobalt-iron-boron, cobalt-gadolinium, terbium-cobalt-iron, iron-palladium-boron, cobalt-terbium, cobalt-iron-gadolinium, cobalt-chromium, heusler alloys.
As one possible embodiment, the second fixed magnetic layer further includes a horizontal magnetization layer between the first vertical magnetization layer and the second electrode layer, the horizontal magnetization layer having a horizontal magnetic anisotropy energy, the horizontal magnetization layer and the first vertical magnetization layer having a ferromagnetic coupling therebetween.
In the embodiment of the application, due to the existence of the horizontal magnetization layer, the magnetization direction of the second fixed magnetic layer has a certain included angle with the vertical direction, so that the current flowing through the second fixed magnetic layer has an inclined spin transfer torque, the incubation time is reduced, and the device switching speed is improved.
As a possible embodiment, the second fixed magnetic layer further includes a horizontal antiferromagnetic layer between the first vertical magnetization layer and the second electrode layer, the horizontal antiferromagnetic layer having horizontal magnetic anisotropy energy, the horizontal antiferromagnetic layer and the first vertical magnetization layer having antiferromagnetic coupling therebetween.
In the embodiment of the present application, because the horizontal antiferromagnetic layer exists, and the magnetization direction of the second fixed magnetic layer has a certain included angle with the vertical direction, the current flowing through the second fixed magnetic layer has an inclined spin transfer torque, so that the incubation time is reduced, and the device switching speed is increased.
As a possible embodiment, the horizontal antiferromagnetic layer comprises a layer of antiferromagnetic material, or a plurality of antiferromagnetically coupled layers of ferromagnetic material.
As one possible embodiment, the second fixed magnetic layer further includes a second perpendicular magnetization layer between the first perpendicular magnetization layer and the free magnetic layer, the second perpendicular magnetization layer having perpendicular magnetic anisotropy energy.
In the embodiment of the present application, the second perpendicular magnetization layer is located on the side of the first perpendicular magnetization layer facing the free magnetic layer, thereby improving the spin transfer efficiency.
As a possible embodiment, the second perpendicular magnetization layer is cofeb, coffe or feb.
As a possible implementation, the first fixed magnetic layer includes a pinning layer and a reference layer, the pinning layer being located between the first electrode layer and the reference layer, the reference layer and the pinning layer having a ferromagnetic coupling therebetween.
In the embodiment of the present application, the pinning layer is used to fix the magnetization direction of the reference layer, so that the reference layer has a fixed magnetization direction, so that the first fixed magnetic layer has a fixed magnetization direction, and the reference layer and the pinning layer have strong ferromagnetic coupling, so that the magnetization direction of the reference layer is not inverted when current is written.
As a possible embodiment, the pinning layer includes a first magnetic layer, a nonmagnetic layer, and a second magnetic layer stacked in this order, and the first magnetic layer and the second magnetic layer have antiferromagnetic coupling.
In the embodiment of the application, the pinning layer can be an artificial antiferromagnetic structure, and the structure can reduce stray fields generated by the pinning layer.
As a possible embodiment, the first magnetic layer and the second magnetic layer are at least one of the following materials: cobalt platinum multilayer films, cobalt palladium multilayer films, cobalt nickel multilayer films, iron platinum, cobalt platinum, iron palladium boron, cobalt palladium, platinum manganese, palladium manganese, iron manganese, cobalt iron boron, cobalt iron, cobalt boron; the material of the nonmagnetic layer is at least one of the following materials: iridium, ruthenium, copper, chromium.
As a possible embodiment, the pinning layer is a layer of material having perpendicular magnetic anisotropy energy.
In the embodiment of the present application, the pinned layer may be a material layer having perpendicular magnetic anisotropy energy without constituting an artificial antiferromagnetic structure, so that the pinned layer and the second fixed magnetic layer located at the other side of the free magnetic layer have opposite magnetization components, and the magnetizations of the pinned layer and the second fixed magnetic layer are adjusted by adjusting the respective thicknesses thereof, so that the stray field near the free magnetic layer may be made zero.
As a possible embodiment, the reference layer and the free magnetic layer are each one of cofeb, cob, feb, cofe.
As a possible implementation, a structure conversion layer is formed between the pinning layer and the reference layer, and the structure conversion layer is at least one of the following materials: tantalum, titanium nitride, aluminum, magnesium, titanium magnesium, tungsten, molybdenum.
In the embodiment of the application, a structural inversion layer can be further formed between the pinning layer and the reference layer, and the structural inversion layer can provide a better growth plane for an upper layer film layer of the structural inversion layer.
As a possible embodiment, the first electrode layer is a bottom electrode located at the bottom layer, and the second electrode layer is a top electrode located at the top layer; or, the first electrode layer is a top electrode positioned on the top layer, and the second electrode layer is a bottom electrode positioned on the bottom layer.
In the embodiment of the application, one of the first electrode layer and the second electrode layer is a bottom electrode at the bottom, and the other is a top electrode at the top, so that the device can adapt to more various device structures.
As a possible embodiment, the magnetic tunnel junction further includes a seed layer;
when the first electrode layer is a bottom electrode, the seed layer is positioned between the first electrode layer and the first fixed magnetic layer; when the second electrode layer is a bottom electrode, the seed layer is located between the second electrode layer and the second fixed magnetic layer.
In the embodiment of the application, the seed layer can be formed on the bottom electrode, so that a better growth plane is provided for the film layer on the seed layer, the quality of the film layer in the device is improved, and the performance of the device is improved.
As a possible implementation, the seed layer is at least one of the following materials: nickel chromium, tantalum nitride, platinum, palladium, ruthenium, iridium, copper nitride.
As a possible embodiment, each of the first electrode layer and the second electrode layer is at least one of titanium nitride, tantalum, platinum manganese, ruthenium, copper, tungsten, and aluminum.
As a possible implementation, the resistance of the capping layer is less than or equal to the tunneling insulating layer.
In embodiments of the present application, the capping layer has a resistance less than or equal to the tunneling insulating layer, thereby reducing the overall resistance in the magnetic tunnel junction while ensuring device performance.
As a possible embodiment, the tunneling insulating layer is at least one of the following materials: magnesium oxide, magnesium gallium oxide, magnesium gadolinium oxide, titanium oxide, tantalum oxide, aluminum oxide, magnesium titanium oxide, strontium oxide, barium oxide, radium oxide, hafnium oxide; the covering layer material is at least one of the following materials: magnesium oxide, magnesium gallium oxide, magnesium gadolinium oxide, titanium oxide, tantalum oxide, aluminum oxide, magnesium titanium oxide, strontium oxide, barium oxide, radium oxide, hafnium oxide, tantalum, tungsten, platinum, palladium, molybdenum, ruthenium, titanium nitride, vanadium, magnesium, iridium.
In a second aspect of the embodiments of the present application, there is provided a memory cell, including: a transistor, and a magnetic tunnel junction as provided in the first aspect of the embodiments of the present application electrically connected to the transistor.
As a possible implementation, an interconnection line is formed between the transistor and the magnetic tunnel junction, and the transistor and the magnetic tunnel junction are electrically connected through the interconnection line.
As a possible implementation, the transistor includes a source, a drain, and a gate, and the magnetic tunnel junction is connected between the drain and a bit line.
In a third aspect of the embodiments of the present application, a storage device is provided, which includes a storage controller and a storage unit as provided in the third aspect of the embodiments of the present application, where the storage controller is configured to read and write data from and to the storage unit.
According to the technical scheme, the embodiment of the application has the following advantages:
embodiments of the present invention provide a magnetic tunnel junction and a memory cell, the magnetic tunnel junction includes a first electrode layer, a first fixed magnetic layer, a tunneling insulating layer, a free magnetic layer, a capping layer, a second fixed magnetic layer, and a second electrode layer, which are sequentially stacked in a longitudinal direction, the first fixed magnetic layer and the second fixed magnetic layer each have a fixed magnetization direction, the magnetization direction of the first fixed magnetic layer has a longitudinal component, and a component of the magnetization direction of the second fixed magnetic layer in the longitudinal direction is opposite to a component of the magnetization direction of the first fixed magnetic layer in the longitudinal direction, the free magnetic layer has perpendicular magnetic anisotropy performance, that is, the first fixed magnetic layer and the second fixed magnetic layer are respectively located at both sides of the free magnetic layer and have opposite magnetization components in the longitudinal direction, so that when a write current passes through the magnetic tunnel junction, the free magnetic layer is subjected to two same-direction spin transfer torques from the first fixed magnetic layer and the second fixed magnetic layer, and has higher power consumption than a write current only from the first fixed magnetic layer.
In order that the detailed description of the present application may be clearly understood, a brief description of the drawings that will be used when describing the detailed description of the present application will be provided. It is to be understood that these drawings are merely illustrative of some of the embodiments of the application.
Fig. 1 is a schematic structural diagram of a basic memory cell of an MRAM device according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a magnetic tunnel junction;
FIG. 3 is a schematic diagram of a magnetic tunnel junction according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of another magnetic tunnel junction structure provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of another magnetic tunnel junction according to an embodiment of the present application.
The embodiment of the application provides a magnetic tunnel junction and a storage unit, which can reduce the writing current of a device and reduce the writing power consumption.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be implemented in other sequences than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The present application will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially in general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
The basic memory cell of the MRAM device may include a magnetic tunnel junction and a transistor, which may be connected through an interconnection line, and the transistor and the magnetic tunnel junction may be further connected to a wiring for writing and reading, respectively. Specifically, referring to fig. 1, a schematic structural diagram of a basic memory cell of an MRAM device provided in an embodiment of the present disclosure is shown, where a transistor may include a source 101, a drain 103, and a gate 102, a connection for writing and reading may include a source line (source line) 300, a word line (word line) 200, and a bit line (bit line) 400, where the source 101 of the transistor may be connected to the source line 300 through an interconnection line 30, the gate 102 may be connected to the word line 200 through an interconnection line 20, the drain 103 is connected to the bit line 400 through an interconnection line 40 and a Magnetic Tunnel Junction (MTJ) 500, and the interconnection lines 30, 20, and 40 may include a via (via) or a metal connection line, and may further include a connection pad, for example, a lower electrode of the magnetic tunnel junction is connected to the drain 103 of the transistor through the via and the connection pad. Writing and reading of the basic memory cell can be performed by the voltages of the source line 300, the word line 200, and the bit line 300 of the transistor.
Referring to fig. 2, a schematic structural diagram of a magnetic tunnel junction may include a bottom electrode 110, a fixed magnetic layer 111, a tunneling insulating layer 112, a free magnetic layer 113, and a top electrode 114, which are sequentially stacked, wherein the magnetic property of the fixed magnetic layer 111 is unchanged, the magnetic polarization direction of the free magnetic layer 113 is changed with a write current, when the magnetization directions of the fixed magnetic layer 111 and the free magnetic layer 113 are the same, the resistance of the magnetic tunnel junction is the smallest, and when the magnetization directions of the fixed magnetic layer 111 and the free magnetic layer 113 are different by 180 degrees, the resistance of the magnetic tunnel junction is the largest, so that the data may be determined as 0 or 1 through circuit design.
For example, a spin transfer torque based magnetic random access memory (STT-MRAM), the magnetic tunnel junction of which may be based on a CoFeB/MgO (CoFeB/MgO) system, i.e., the free magnetic layer 113 and the fixed magnetic layer 111 both include CoFeB, and the tunneling insulating layer 112 is MgO, which provides Perpendicular Magnetic Anisotropy (PMA), and there may be an upward or downward magnetization direction in the fixed magnetic layer 111 and the free magnetic layer 113. Referring to fig. 2, the magnetization direction of the fixed magnetic layer 111 is upward and can be represented by an arrowed line on the left side of the fixed magnetic layer 111, and the magnetization of the free magnetic layer 113 can be adjusted upward or downward according to the write current and can be represented by an arrowed line on the left side of the free magnetic layer 113.
In practical memory applications, the magnetic direction of free magnetic layer 113 changes only with a change in the direction of the write current, and when the written information is different from the originally stored information, the magnetic direction of free magnetic layer 113 is flipped by 180 degrees, while when read and not operated, the magnetic direction of free magnetic layer 113 does not change. While the critical write current I of the MRAM device c Proportional to the magnetic damping (damping) α of the free magnetic layer 113, the amount of electron charge E, and the energy barrier E at which the free magnetic layer 113 flips, and is proportional to the spin transfer efficiency g (θ) of the device m ) In inverse proportion, i.e. critical write current I c Can be expressed by the following formula:
therefore, the device often needs a large write current, which easily causes large write power consumption, and since repeated writing is performed, the current needs to pass through the magnetic tunnel junction, and the large write current may cause breakdown of the magnetic tunnel junction to cause permanent damage, which cannot meet the actual requirement.
In view of the above technical problems, embodiments of the present invention provide a magnetic tunnel junction and a memory cell, in which the magnetic tunnel junction includes a first electrode layer, a first fixed magnetic layer, a tunneling insulating layer, a free magnetic layer, a capping layer, a second fixed magnetic layer, and a second electrode layer, which are sequentially stacked in a longitudinal direction, the first fixed magnetic layer and the second fixed magnetic layer each have a fixed magnetization direction, and a component of the magnetization direction of the second fixed magnetic layer in the longitudinal direction is opposite to a component of the magnetization direction of the first fixed magnetic layer in the longitudinal direction, and the free magnetic layer has perpendicular magnetic anisotropy performance, that is, the first fixed magnetic layer and the second fixed magnetic layer are respectively located at both sides of the free magnetic layer and have opposite magnetization components in the longitudinal direction, so that when a write current passes through the magnetic tunnel junction, the free magnetic layer is subjected to two homodromous spin transfer torques from the first fixed magnetic layer and the second fixed magnetic layer, and has higher spin transfer torque efficiency and higher current efficiency than a spin transfer torque from the first fixed magnetic layer and the second fixed magnetic layer only when the write current passes through the magnetic tunnel junction, and thus a switching current is smaller, and a write current of the write device can be reduced.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.
Referring to fig. 3, which is a schematic structural diagram of a magnetic tunnel junction according to an embodiment of the present disclosure, the magnetic tunnel junction may include a first electrode layer 210, a first fixed magnetic layer 220, a tunneling insulating layer 230, a free magnetic layer 240, a capping layer 250, a second fixed magnetic layer 260, and a second electrode layer 270, which are sequentially stacked in a longitudinal direction.
The first electrode layer 210 and the second electrode layer 270 may be respectively connected to a semiconductor device, so that a voltage is applied to the magnetic tunnel junction to form a write current, a read current, and the like through the magnetic tunnel junction. The first electrode layer 210 and the second electrode layer 270 have a conductive function, and may be made of a material with a good conductive property, a metal, or another conductive material, for example, at least one of titanium nitride, tantalum, platinum, manganese, ruthenium, copper, tungsten, or aluminum. The materials of the first electrode layer 210 and the second electrode layer 270 may be uniform or may not be uniform.
One of the first electrode layer 210 and the second electrode layer 270 is a bottom electrode at the bottom, and the other is a top electrode at the top. Specifically, the first electrode layer 210 may be a bottom electrode, the second electrode layer 270 may be a top electrode, and the magnetic tunnel junction may sequentially include, from bottom to top, the first electrode layer 210, the first fixed magnetic layer 220, the tunneling insulating layer 230, the free magnetic layer 240, the capping layer 250, the second fixed magnetic layer 260, and the second electrode layer 270, as shown in fig. 3; or, the first electrode layer 210 is a top electrode, and the second electrode layer 270 is a bottom electrode, that is, the magnetic tunnel junction may include, in order from top to bottom, the second electrode layer 270, the second fixed magnetic layer 260, the capping layer 250, the free magnetic layer 240, the tunneling insulating layer 230, the first fixed magnetic layer 220, and the first electrode layer 210, as shown in fig. 4, which is a schematic structural diagram of another magnetic tunnel junction provided in the embodiment of the present application. That is, the first fixed magnetic layer 220 and the second fixed magnetic layer 260 are located at both sides of the free magnetic layer 240, the second fixed magnetic layer 260 is located above the free magnetic layer 240 when the first fixed magnetic layer 220 is located below the free magnetic layer 240, and the second fixed magnetic layer 260 is located below the free magnetic layer 240 when the first fixed magnetic layer 220 is located above the free magnetic layer 240.
In the embodiment of the application, in order to improve the quality of the film layer on the bottom electrode, a seed layer may be formed on the bottom electrode, so as to provide a better growth plane for the film layer thereon. For example, when the first electrode layer 210 is a bottom electrode, a seed layer 211 may be formed between the first electrode layer 210 and the first fixed magnetic layer 220, so as to improve the film quality of the first fixed magnetic layer 220, and refer to fig. 5, which is a schematic structural diagram of another magnetic tunnel junction provided in this embodiment of the present application; when the second electrode layer 270 is a bottom electrode, a seed layer (not shown) may be formed between the second electrode layer 270 and the second fixed magnetic layer 260, so as to improve the film quality of the second fixed magnetic layer. The material of the seed layer may be at least one of the following materials: tantalum (Ta), titanium nitride (TiN), platinum (Pt), palladium (Pd), ruthenium (Ru), iridium (Ir), nickel chromium (NiCr), copper nitride (CuN).
The first fixed magnetic layer 220 has a fixed magnetization direction, and in particular, may have a longitudinal component. For example, the first fixed magnetic layer 220 includes a film layer having Perpendicular Magnetic Anisotropy (PMA) and thus has perpendicular magnetic anisotropy, and the magnetization direction of the film having perpendicular magnetic anisotropy is perpendicular to the film surface, for example, when the first fixed magnetic layer 220 is a longitudinally stacked and horizontally extending film, the magnetization direction is perpendicular to the surface of the first fixed magnetic layer 220, and may be vertically upward or vertically downward. In addition, the first fixed magnetic layer 220 includes a film layer having a perpendicular magnetic anisotropy energy and a film layer having a horizontal magnetic anisotropy energy, and the magnetization direction thereof may be obliquely upward or obliquely downward.
In the embodiment of the present application, the first fixed magnetic layer 220 may include a pinning layer 221 and a reference layer 223, wherein the pinning layer 221 is used to fix the magnetization direction of the reference layer 223, the reference layer 223 has a fixed magnetization direction, so that the first fixed magnetic layer 220 has a fixed magnetization direction, and there is strong ferromagnetic coupling between the reference layer 221 and the pinning layer 223, so that the magnetization direction of the reference layer 223 is not inverted at the time of current writing. The pinning layer 221 may be located between the first electrode layer 210 and the reference layer 223.
As a possible implementation, the pinning layer 221 may be an artificial antiferromagnetic structure, which may reduce stray fields generated by the pinning layer 221. Specifically, the pinning layer 221 may include a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, which are thus stacked, the first magnetic layer and the second magnetic layer having antiferromagnetic coupling. When the first fixed magnetic layer has perpendicular magnetic anisotropy, the first magnetic layer and the second magnetic layer may also have a magnetization direction perpendicular to the surface of the self film layer. Specifically, the first magnetic layer and the second magnetic layer are at least one of the following materials: cobalt platinum (Co/Pt) multilayer films, cobalt palladium (Co/Pd) multilayer films, cobalt nickel (Co/Ni) multilayer films, iron platinum (FePt), cobalt platinum (CoPt), iron palladium (FePd), iron palladium boron (FePdB), cobalt palladium (CoPd), platinum manganese (PtMn), palladium manganese (PdMn), iron manganese (FeMn), cobalt iron boron (CoFeB), iron boron (FeB), cobalt iron (CoFe), cobalt boron (CoB), and the like; the material of the nonmagnetic layer is at least one of the following materials: iridium (Ir), ruthenium (Ru), copper (Cu), chromium (Cr), and the like.
As another possible embodiment, the pinning layer 221 may be a material layer having perpendicular anisotropy without constituting an artificial antiferromagnetic structure, so that the pinning layer 221 and the second fixed magnetic layer 260 located at the other side of the free magnetic layer 240 have opposite magnetization components, and the magnetizations of the two are adjusted by adjusting the respective thicknesses, so that the stray field near the free magnetic layer 240 may be zero.
The magnetization direction of the reference layer 223 is fixed by the pinned layer 221 and thus may have a fixed magnetization direction, for example, the reference layer 223 may have perpendicular magnetic anisotropy, the magnetization direction may be longitudinally upward perpendicular to the surface of the reference layer 223 or longitudinally downward perpendicular to the surface of the reference layer 223, and of course, the magnetization direction may also be at an angle with respect to the longitudinal direction, i.e., the magnetization direction may be obliquely upward or obliquely downward. The reference layer 223 may be cobalt iron boron (CoFeB), iron boron (FeB), cobalt iron (CoFe), or cobalt boron (CoB), etc., i.e., the reference layer 223 may be represented as (Co) 223 x Fe 1-x ) 1-y B y Structures wherein x and y are between 0 and 0.50. The reference layer 223 may have a thickness ranging from 0.1 nm to 5nm, may be a doped material, and may have a single-layer thin film structure or a multi-layer thin film structure.
A structure transforming layer 222 may also be formed between the pinning layer 221 and the reference layer 223, the structure transforming layer 222 may provide a better growth plane for the upper film layer of the structure transforming layer 222, for example, when the reference layer 223 is located above the pinning layer 221, the structure transforming layer 222 may provide a better growth plane for the reference layer 223, thereby improving the film forming quality of the reference layer 223, for example, when the pinning layer 221 is located above the reference layer 222, the structure transforming layer 222 may provide a better growth plane for the pinning layer 221, thereby improving the film forming quality of the pinning layer 221. The structural conversion layer 222 may be at least one of tantalum (Ta), titanium (Ti), titanium nitride (TiN), aluminum (Al), magnesium (Mg), titanium magnesium (TiMg), tungsten (W), molybdenum (Mo), etc., and may have a thickness of less than or equal to 5nm.
The tunneling insulation layer 230 is formed between the first fixed magnetic layer 220 and the free magnetic layer 240, exhibits a high resistance state, and is a main source of resistance in the magnetic tunnel junction, there is no electromagnetic coupling between the first fixed magnetic layer 220 and the free magnetic layer 240 on both sides of the tunneling insulation layer 230, and the tunneling insulation layer 230 can make the device have a high Tunneling Magnetoresistance (TMR). The tunneling insulating layer 230 may be a single-layer film or a multi-layer film, and may be made of at least one of the following materials: magnesium oxide (MgO), magnesium gallium oxide (MgGaO), magnesium gadolinium oxide (MgGdO), titanium oxide (TiOx), tantalum oxide (TaOx), aluminum oxide (AlOx), magnesium titanium oxide (MgTiOx), strontium oxide (SrO), barium oxide (BaO), radium oxide (RaO), hafnium oxide (HfOx), and the like.
The free magnetic layer 240 is a film layer capable of changing its magnetization direction with a write current, and the free magnetic layer 240 may have a perpendicular magnetic anisotropy property, and the magnetization direction of the free magnetic layer 240 may be vertically upward or vertically downward when it extends in a horizontal direction. The resistance of the magnetic tunnel junction is the smallest when the magnetization directions of the free magnetic layer 240 and the first fixed magnetic layer 220 coincide, and the resistance of the magnetic tunnel junction is the largest when the magnetization directions of the free magnetic layer 240 and the first fixed magnetic layer 220 differ by 180 degrees. For example, when the magnetization direction of the first fixed magnetic layer 220 is upward, the resistance of the magnetic tunnel junction is the smallest if the magnetization direction of the free magnetic layer 240 is also upward, and the resistance of the magnetic tunnel junction is the largest if the magnetization direction of the free magnetic layer 240 is downward.
The materials of the free magnetic layer 240 and the reference layer 223 may or may not be the same, the free magnetic layer 240 may be cobalt iron boron (CoFeB), iron boron (FeB), cobalt iron (CoFe), or cobalt boron (CoB), that is, the free magnetic layer 240 may be represented as (Co) layer 240 x Fe 1-x ) 1-y B y Structures where x and y are between 0 and 0.50, where the ratio may be the same as for the reference layer 223 or different from the reference layer 223, (Co) of the free magnetic layer 240 and the reference layer 223 x Fe 1-x ) 1-y B y The values of x and y in the structure determine the cobalt and iron content therein, and generally, the interfacial perpendicular magnetic anisotropy energy of Fe/MgO is significantly larger than that of CoFe/MgO, so the value of x can be appropriately reduced to reduce the cobalt content, thereby improving the perpendicular magnetic anisotropy energy of free magnetic layer 240 and reference layer 223. However, magnetic damping and TMR values are consideredThe ratio of cobalt in the free magnetic layer 240 and the reference layer 223 cannot be too low, and x and y can be made to be between 0.15-0.30. The thickness of the free magnetic layer 240 may be in the range of 0.1-3nm, and may be a doped material, a single-layer thin film structure, or a multi-layer thin film structure, where multiple layers have magnetic coupling.
The capping layer 250 is disposed between the free magnetic layer 240 and the second fixed magnetic layer 260 for introducing an interface between the capping layer 250 and the free magnetic layer 240, thereby increasing perpendicular magnetic anisotropy of the free magnetic layer 240 for the purpose of increasing data retention time. The capping layer 250 may have a resistance less than or equal to that of the tunneling insulating layer 230, may be identical to that of the tunneling insulating layer 230, and may be, for example, at least one of the following materials: magnesium oxide (MgO), magnesium gallium oxide (MgGaO), magnesium gadolinium oxide (MgGdO), titanium oxide (TiOx), tantalum oxide (TaOx), aluminum oxide (AlOx), magnesium titanium oxide (MgTiOx), strontium oxide (SrO), barium oxide (BaO), radium oxide (RaO), hafnium oxide (HfOx), and the like, and may be a metal material, for example, at least one of tantalum (Ta), tungsten (W), platinum (Pt), palladium (Pd), molybdenum (Mo), ruthenium (Ru), titanium (Ti), titanium nitride (TiN), vanadium (V), magnesium (Mg), iridium (Ir), and the like. The cover layer 250 may have a single-layer structure or a multi-layer structure.
The second fixed magnetic layer 260 and the first fixed magnetic layer 220 are symmetrically disposed on both sides of the free material layer 240, the second fixed magnetic layer 260 may have a fixed magnetization direction, the magnetization direction of the second fixed magnetic layer 260 also has a component in the longitudinal direction, and the component in the longitudinal direction of the magnetization direction of the second fixed magnetic layer 260 is opposite to the component in the longitudinal direction of the magnetization direction of the first fixed magnetic layer 220, specifically, the magnetization direction of the second fixed magnetic layer 260 and the first fixed magnetic layer 220 may be antiparallel or may form a certain angle. Referring to fig. 5, the magnetization direction of the second fixed magnetic layer 260 is indicated by the arrowed line on the left side of the second fixed magnetic layer 260, and when the magnetization direction of the first fixed magnetic layer 220 is upward in the longitudinal direction, the magnetization direction of the second fixed magnetic layer 260 may be vertically downward, or diagonally downward, i.e., downward in the longitudinal direction.
Since the component of the magnetization direction of the second fixed magnetic layer 260 in the longitudinal direction is opposite to the component of the magnetization direction of the first fixed magnetic layer 220 in the longitudinal direction, and the second fixed magnetic layer 260 and the first fixed magnetic layer 220 are disposed on both sides of the free magnetic layer, when the magnetic tunnel junction passes through the write current, the first fixed magnetic layer 220 and the second fixed magnetic layer 260 can provide the same-direction spin transfer torque, both of which can promote the inversion of the magnetization direction of the free magnetic layer 240, and compared with the first fixed magnetic layer 220 alone, the embodiment of the present application can obtain higher spin transfer efficiency and higher current efficiency, thereby reducing the write current of the device and reducing the power consumption of the device.
As one possible embodiment, the second fixed magnetic layer 260 may include a first perpendicular magnetic layer 262, the first perpendicular magnetic layer 262 having a perpendicular magnetic anisotropy property, and when the magnetization direction of the first fixed magnetic layer 220 is a vertical direction, the magnetization direction of the first perpendicular magnetic layer 262 may be opposite to the magnetization direction of the first fixed magnetic layer 220. For example, the magnetization direction of the first fixed magnetic layer 220 is upward, and the magnetization direction of the second fixed magnetic layer 262 is vertically downward.
Specifically, the first perpendicular magnetization layer 262 may have bulk perpendicular magnetic anisotropy energy (bulk PMA), which may be realized by a thin film having a small thickness, and the perpendicular anisotropy energy of a film layer having the bulk perpendicular magnetic anisotropy energy may depend on the material characteristics of the first perpendicular magnetization layer 262 itself, not on the material of a film layer adjacent thereto, may provide a reliable magnetic field, and may be suitable for more diverse scenarios. The first perpendicular magnetization layer 262 may be a thin film whose thickness may be less than or equal to 10nm, and a smaller-sized device may be realized. The first perpendicular magnetization layer 262 may be an amorphous material, which is insensitive to roughness and stress due to the amorphous characteristic of the first perpendicular magnetization layer 262, and may reduce the influence of the first perpendicular magnetization layer 262 on the quality of the entire film layer, specifically, the film layer formed on the first perpendicular magnetization layer 262 may not have the problem of dislocation and the like caused by the lattice constant difference with the first perpendicular magnetization layer 262, and may improve the quality of the film layer thereon, and due to the amorphous characteristic, the surface thereof is relatively flat, and therefore, no matter above the bottom electrode or below the top electrode, a relatively flat interface may be formed with other film layers, which is beneficial to obtaining higher device performance.
The first perpendicular magnetization layer 262 may be, for example, a rare earth-transition metal (RE-TM) material having a bulk perpendicular anisotropy energy, and the material of the first perpendicular magnetization layer 262 may be, for example, at least one of the following materials: cobalt terbium (CoTb), terbium colbalt iron (TbCoFe), iron palladium boron (FePdB), cobalt gadolinium (CoGd), cobalt iron gadolinium (cofedg), cobalt chromium (CoCr), and the like.
Since the coercive force of the reference layer 223 and the first perpendicular magnetization layer 262 are different, the reference layer 223 and the first perpendicular magnetization layer 262 can be initialized to have opposite magnetization directions by the external magnetic field. Specifically, a magnetic field larger than the coercive fields of the two layers may be applied to magnetize the two layers in the same direction, and then a magnetic field between the coercive fields and opposite to the direction of the magnetic field may be applied to magnetize the softer first perpendicular magnetization layer 262 in the opposite direction to the reference layer 223.
In particular, the first perpendicular magnetization layer 262 may also be a ferromagnetic material, and its perpendicular magnetic anisotropy energy may be realized by a shape magnetic anisotropy energy, for example, the longitudinal dimension of the layer is larger than its transverse dimension, that is, its thickness is larger than its width, so that the magnetic anisotropy energy in the longitudinal direction is obtained, and in particular, for the first perpendicular magnetization layer 262 having a transverse dimension of 30nm, its thickness may be larger than 30nm. The first perpendicular magnetization layer 262 can be any ferromagnetic material, which can include, by way of example, at least one of the following materials: cobalt iron boron (CoFeB), iron boron (FeB), cobalt boron (CoB), cobalt (Co), cobalt gadolinium (CoGd), terbium cobalt iron (TbCoFe), iron palladium boron (FePdB), cobalt terbium (CoTb), cobalt iron gadolinium (cofedg), cobalt chromium (CoCr), heusler alloy (Heusler alloy), and the like. When the first perpendicular magnetization layer 262 is a ferromagnetic material, the first perpendicular magnetization layer 262 can simultaneously serve as a part of a hard mask when etching a film layer thereunder.
As another possible embodiment, the second fixed magnetic layer 260 may include a first vertical magnetization layer 262 and a horizontal magnetization layer 263, the horizontal magnetization layer 263 having a horizontal magnetic anisotropy energy, the magnetization direction being parallel to the surface, the magnetization direction of the horizontal magnetization layer 263 being along the horizontal direction when the respective film layers are longitudinally stacked. The horizontal magnetization layer 263 is located between the first vertical magnetization layer 262 and the second electrode layer 270, that is, the horizontal magnetization layer 263 is located on the side of the first vertical magnetization layer 262 far away from the free magnetic layer 240, and there is ferromagnetic coupling between the first vertical magnetization layer 262 and the horizontal magnetization layer 263, and due to the existence of the horizontal magnetization layer 263, the magnetization direction of the second fixed magnetic layer 260 has a certain angle with the vertical direction, so that the current flowing through the second fixed magnetic layer 260 has an oblique spin transfer torque, the incubation time (incubation time) is reduced, and the device switching speed is increased. The material of the horizontal magnetization layer 263 may be at least one of the following materials: iridium manganese (IrMn), platinum manganese (PtMn), cobalt (Co), cobalt boron (CoB), nickel iron (NiFe), cobalt iron (CoFe), and the like.
As still another possible embodiment, the second fixed magnetic layer 260 may include a first perpendicular magnetization layer 262 and a horizontal antiferromagnetic layer having antiferromagnetic property with a magnetization direction parallel to the surface and a magnetization direction along the horizontal direction when the respective film layers are longitudinally stacked. The horizontal antiferromagnetic layer is located between the first vertical magnetization layer 262 and the second electrode layer 270, that is, the horizontal antiferromagnetic layer is located on the side of the first vertical magnetization layer 262 far from the free magnetic layer 240, and there is antiferromagnetic coupling between the first vertical magnetization layer 262 and the horizontal antiferromagnetic layer, and the magnetization direction of the second fixed magnetic layer 260 has a certain angle with the vertical direction due to the existence of the horizontal antiferromagnetic layer, so that the current flowing through the second fixed magnetic layer 260 has an inclined spin transfer torque, the incubation time (incubation time) is reduced, and the device switching speed is increased. The horizontal antiferromagnetic layer may be an antiferromagnetic material layer or may include a plurality of antiferromagnetically coupled ferromagnetic material layers.
As still another possible embodiment, the second fixed magnetic layer 260 may include a first perpendicular magnetization layer 262 and a second perpendicular magnetization layer 261, the second perpendicular magnetization layer 261 having a perpendicular magnetic anisotropy energy, the first perpendicular magnetization layer 262 being located between the second perpendicular magnetization layer 261 and the second electrode layer 270, that is, the second perpendicular magnetization layer 261 being located on the side of the first perpendicular magnetization layer 262 facing the free magnetic layer 240, thereby improving the spin transfer efficiency. The material of the second perpendicular magnetization layer 261 may be at least one of cobalt iron boron (CoFeB), cobalt boron (CoB), cobalt iron (CoFe), iron boron (FeB), and the thickness of the second perpendicular magnetization layer 261 may be less than or equal to 2nm.
As still another possible embodiment, the second fixed magnetic layer 260 may include a first vertical magnetization layer 262, a second vertical magnetization layer 261, and a horizontal magnetization layer 263, wherein the horizontal magnetization layer 263 is located on the side of the first vertical magnetization layer 262 away from the free magnetic layer 240, the second vertical magnetization layer 261 is located on the side of the first vertical magnetization layer 262 toward the free magnetic layer 240, and the magnetization direction of the second fixed magnetic layer 260 has an angle with the vertical direction, so that the spin transfer efficiency may be improved while the incubation time is reduced, thereby increasing the device switching speed.
As still another possible implementation, the second fixed magnetic layer 260 may include a first vertical magnetization layer 262, a second vertical magnetization layer 261, and a horizontal antiferromagnetic layer, wherein the horizontal antiferromagnetic layer is located on the side of the first vertical magnetization layer 262 away from the free magnetic layer 240, the second vertical magnetization layer 261 is located on the side of the first vertical magnetization layer 262 facing the free magnetic layer 240, and the magnetization direction of the second fixed magnetic layer 260 has an angle with the vertical direction, which may provide spin transfer efficiency while reducing the incubation time, thereby increasing the device switching speed.
In a specific implementation, the magnetic tunnel junction may include, from bottom to top, the first electrode layer 210, the seed layer 211, the pinning layer 221, the structure transformation layer 222, the reference layer 223, the tunneling insulation layer 230, the free magnetic layer 240, the capping layer 250, the second fixed magnetic layer 260, and the second electrode layer 270, or may include, from bottom to top, the second electrode layer 270, the seed layer, the capping layer 250, the free magnetic layer 240, the tunneling insulation layer 230, the reference layer 223, the structure transformation layer 222, the pinning layer 221, and the first electrode layer 210, and further, other intervening layers may be formed between these film layers for improving lattice matching between the film layers, or for blocking layers of different film layers, or for causing an interface effect, which is not illustrated herein.
Embodiments provide a magnetic tunnel junction including a first electrode layer, a first fixed magnetic layer, a tunneling insulating layer, a free magnetic layer, a capping layer, a second fixed magnetic layer, and a second electrode layer, which are sequentially stacked in a longitudinal direction, wherein the first fixed magnetic layer and the second fixed magnetic layer each have a fixed magnetization direction, and a component of the magnetization direction of the second fixed magnetic layer in the longitudinal direction is opposite to a component of the magnetization direction of the first fixed magnetic layer in the longitudinal direction, and the free magnetic layer has perpendicular magnetic anisotropy, that is, the first fixed magnetic layer and the second fixed magnetic layer are respectively located on both sides of the free magnetic layer and have opposite magnetization components in the longitudinal direction, so that when a write current passes through the magnetic tunnel junction, the free magnetic layer receives two homodromous spin transfer torques from the first fixed magnetic layer and the second fixed magnetic layer, and has higher current efficiency than a spin transfer torque only received from the first fixed magnetic layer, and thus a smaller switching current is required, and thus write current of the device can be reduced, and write power consumption can be reduced.
An embodiment of the present application further provides a storage unit, including: a transistor, and said magnetic tunnel junction electrically connected to said transistor. And an interconnection line is formed between the transistor and the magnetic tunnel junction, and the transistor and the magnetic tunnel junction are electrically connected through the interconnection line. Specifically, the transistor comprises a source, a drain and a gate, and the magnetic tunnel junction is connected between the drain and a bit line. In addition, the source of the transistor may be connected to a source line, and the gate may be connected to a word line.
The embodiment of the application also provides a storage device, which comprises a storage controller and the storage units, wherein the storage controller is used for reading and writing data of the storage units. Specifically, the memory controller may supply a write voltage or a read voltage to the memory cell to write data to the memory cell or read data from the memory cell. For example, a memory controller may control the voltages of the word line, bit line, and source line to control the operating state of the transistors to provide a write voltage or a read voltage between the upper and lower electrodes of the magnetic tunnel junction. The write voltage may generate a write current through the magnetic tunnel junction, which may cause the magnetization direction of the free magnetic layer in the magnetic tunnel junction to be inverted, thereby changing the storage state, while the read voltage may generate a read current through the magnetic tunnel junction, which may reflect the resistance of the magnetic tunnel junction, thereby reflecting whether the magnetization direction of the free magnetic layer is the same as or opposite to the magnetization direction of the first fixed magnetic layer, thereby reflecting the storage state.
The "first" in the names of "first fixed magnetic layer", "first perpendicular magnetization layer", "first electrode layer", and the like mentioned in the embodiments of the present application is used only for name notation and does not represent the first in sequence. The same applies to "second" etc.
All the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the embodiments of the memory cell and the memory device, since they are substantially similar to the structural embodiments of the magnetic tunnel junction, the description is simple, and the relevant points can be referred to the partial description of the structural embodiments.
The above is a specific implementation of the present application. It should be understood that the above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (25)
- A magnetic tunnel junction, comprising:the tunneling magnetic memory comprises a first electrode layer, a first fixed magnetic layer, a tunneling insulating layer, a free magnetic layer, a covering layer, a second fixed magnetic layer and a second electrode layer which are sequentially stacked in the longitudinal direction;the first fixed magnetic layer and the second fixed magnetic layer each have a fixed magnetization direction, and a component of the magnetization direction of the second fixed magnetic layer in the longitudinal direction is opposite to a component of the magnetization direction of the first fixed magnetic layer in the longitudinal direction; the free magnetic layer has perpendicular magnetic anisotropy energy.
- The magnetic tunnel junction of claim 1 wherein the second fixed magnetic layer comprises a first perpendicular magnetization layer having bulk perpendicular magnetic anisotropy energy.
- The magnetic tunnel junction of claim 2 wherein the first perpendicular magnetization layer is a rare earth-transition metal material having bulk perpendicular magnetic anisotropy energy.
- The magnetic tunnel junction of claim 3 wherein the rare earth-transition metal material is at least one of: cobalt terbium, terbium cobalt iron, iron palladium boron, cobalt gadolinium, cobalt iron gadolinium and cobalt chromium.
- The magnetic tunnel junction of claim 1 wherein the second fixed magnetic layer comprises a first perpendicular magnetization layer, the first perpendicular magnetization layer being a ferromagnetic metal material, the first perpendicular magnetization layer having a longitudinal dimension greater than a transverse dimension.
- The magnetic tunnel junction of claim 5 wherein the ferromagnetic metal material comprises at least one of: cobalt-iron-boron, cobalt-gadolinium, terbium-cobalt-iron, iron-palladium-boron, cobalt-terbium, cobalt-iron-gadolinium, cobalt-chromium, heusler alloys.
- The magnetic tunnel junction of any of claims 2-6 wherein the second fixed magnetic layer further comprises a horizontal magnetization layer between the first vertical magnetization layer and the second electrode layer, the horizontal magnetization layer having horizontal magnetic anisotropy energy, the horizontal magnetization layer and the first vertical magnetization layer having ferromagnetic coupling therebetween.
- The magnetic tunnel junction of any of claims 2-6 wherein the second fixed magnetic layer further comprises a horizontal antiferromagnetic layer between the first vertical magnetization layer and the second electrode layer, the horizontal antiferromagnetic layer having horizontal magnetic anisotropy energy, the horizontal antiferromagnetic layer and the first vertical magnetization layer having antiferromagnetic coupling therebetween.
- The magnetic tunnel junction of claim 8 wherein the horizontal antiferromagnetic layer comprises a layer of antiferromagnetic material or a plurality of layers of antiferromagnetically coupled ferromagnetic material.
- The magnetic tunnel junction of any of claims 2-9 wherein the second fixed magnetic layer further comprises a second perpendicular magnetization layer between the first perpendicular magnetization layer and the free magnetic layer, the second perpendicular magnetization layer having perpendicular magnetic anisotropy energy.
- The magnetic tunnel junction of claim 10 wherein the second perpendicular magnetization layer is cofeb, or feb.
- The magnetic tunnel junction of any of claims 1-11 wherein the first fixed magnetic layer comprises a pinning layer and a reference layer, the pinning layer being between the first electrode layer and the reference layer, the reference layer and the pinning layer having a ferromagnetic coupling therebetween.
- The magnetic tunnel junction of claim 12 wherein the pinning layer comprises a first magnetic layer, a nonmagnetic layer, and a second magnetic layer stacked in sequence, the first magnetic layer and the second magnetic layer having antiferromagnetic coupling.
- The magnetic tunnel junction of claim 13 wherein the first and second magnetic layers are at least one of: cobalt platinum multilayer films, cobalt palladium multilayer films, cobalt nickel multilayer films, iron platinum, cobalt platinum, iron palladium boron, cobalt palladium, platinum manganese, palladium manganese, iron manganese, cobalt iron boron, cobalt iron, cobalt boron; the material of the nonmagnetic layer is at least one of the following materials: iridium, ruthenium, copper, chromium.
- The magnetic tunnel junction of claim 14 wherein the reference layer and the free magnetic layer are each one of cofeb, cob, feb, cofe.
- The magnetic tunnel junction of claim 12 wherein the pinning layer is a layer of material having perpendicular magnetic anisotropy energy.
- The magnetic tunnel junction of any of claims 11-16 wherein a structural inversion layer is formed between the pinned layer and the reference layer, the structural inversion layer being at least one of the following materials: tantalum, titanium nitride, aluminum, magnesium, titanium magnesium, tungsten, molybdenum.
- The magnetic tunnel junction of any of claims 1-17 wherein the first electrode layer is a bottom electrode on a bottom layer and the second electrode layer is a top electrode on a top layer; or, the first electrode layer is a top electrode positioned on the top layer, and the second electrode layer is a bottom electrode positioned on the bottom layer.
- The magnetic tunnel junction of claim 18 further comprising a seed layer;when the first electrode layer is a bottom electrode, the seed layer is positioned between the first electrode layer and the first fixed magnetic layer; when the second electrode layer is a bottom electrode, the seed layer is located between the second electrode layer and the second fixed magnetic layer.
- The magnetic tunnel junction of claim 19 wherein the seed layer is at least one of the following materials: nickel chromium, tantalum nitride, platinum, palladium, ruthenium, iridium, copper nitride.
- The magnetic tunnel junction of any of claims 1-20 wherein the first electrode layer and the second electrode layer are each at least one of titanium nitride, tantalum, platinum manganese, ruthenium, copper, tungsten, aluminum.
- The magnetic tunnel junction of any of claims 1-21 wherein the capping layer has a resistance less than or equal to the tunneling insulating layer.
- The magnetic tunnel junction of claim 22 wherein the tunneling insulating layer is at least one of: magnesium oxide, magnesium gallium oxide, magnesium gadolinium oxide, titanium oxide, tantalum oxide, aluminum oxide, magnesium titanium oxide, strontium oxide, barium oxide, radium oxide, hafnium oxide; the covering layer material is at least one of the following materials: magnesium oxide, magnesium gallium oxide, magnesium gadolinium oxide, titanium oxide, tantalum oxide, aluminum oxide, magnesium titanium oxide, strontium oxide, barium oxide, radium oxide, hafnium oxide, tantalum, tungsten, platinum, palladium, molybdenum, ruthenium, titanium nitride, vanadium, magnesium, iridium.
- A memory cell, comprising: a transistor, and the magnetic tunnel junction of any of claims 1-23 electrically connected to the transistor.
- A memory device comprising a memory controller and a memory unit as claimed in claim 24, wherein the memory controller is adapted to read and write data from and to the memory unit.
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| PCT/CN2020/105660 WO2022021169A1 (en) | 2020-07-30 | 2020-07-30 | Magnetic tunnel junction and storage unit |
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| US7859892B2 (en) * | 2008-12-03 | 2010-12-28 | Seagate Technology Llc | Magnetic random access memory with dual spin torque reference layers |
| US8907436B2 (en) * | 2010-08-24 | 2014-12-09 | Samsung Electronics Co., Ltd. | Magnetic devices having perpendicular magnetic tunnel junction |
| US9024398B2 (en) * | 2010-12-10 | 2015-05-05 | Avalanche Technology, Inc. | Perpendicular STTMRAM device with balanced reference layer |
| CN104993046A (en) * | 2015-06-25 | 2015-10-21 | 华中科技大学 | MTJ unit and manufacturing method thereof |
| CN105428522B (en) * | 2015-12-01 | 2018-07-20 | 中电海康集团有限公司 | A kind of magnetic tunnel junction for STT-MRAM |
| US10522590B2 (en) * | 2018-03-14 | 2019-12-31 | Avalanche Technology, Inc. | Magnetic memory incorporating dual selectors |
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