CN114839716B - Optical modulator structure capable of realizing low roughness of end face and preparation method - Google Patents
Optical modulator structure capable of realizing low roughness of end face and preparation method Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
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Abstract
The invention discloses an optical modulator structure capable of realizing low roughness of an end face and a preparation method thereof, belonging to the technical field of integrated optics and being characterized by sequentially comprising the following components from bottom to top: the photoelectric composite film comprises a substrate layer, an optical transition layer, an optical function layer, an electro-optical interconnection layer, a coating buffer layer, an adhesion fixing layer and an accompanying sheet; wherein: the refractive index of the material of the optical transition layer is not higher than that of the material of the optical function layer; the optical function layer is a light guide layer; the electro-optical interconnection layer is an electric signal transmission channel. The invention aims to solve the problem of rough end surface in the process of packaging optical modulators made of different materials; the end face with low roughness is obtained by adopting an optimized structure and matching with a processing technology, and the method is suitable for the packaging technology of optical modulators made of various materials.
Description
Technical Field
The invention belongs to the technical field of integrated optics, and particularly relates to an optical modulator structure capable of realizing low end surface roughness and a preparation method thereof.
Background
With the comprehensive development of application scenes such as big data, the internet of things and the like with extremely high requirements on information processing and communication capacity and speed, information processing and communication modes which completely depend on electric signals are gradually lagged behind, and information processing and interactive networks are actively entering the era of all-optical communication networks. In order to meet the requirements of high throughput, high concurrency of information processing and miniaturization of communication network equipment, the field of integrated optics is receiving more and more attention from all parties, and the main research contents of the integrated optics field include collimation, deflection, filtering, spatial radiation, light oscillation, conduction, amplification and modulation of light waves in thin film materials, nonlinear optical effects of the thin film materials related to the collimation, deflection, filtering, spatial radiation, light oscillation, conduction, amplification and modulation of the light waves, integration of homogeneous and heterogeneous materials and the like. In the face of the complex optical communication network requirements and the different current situations of the device principles in the system, various types of materials are required to realize the complex optical communication network, and completely different device configurations and preparation process methods need to be developed for different integrated optical devices of different material systems.
The modulator, as a core device for converting a high-speed electrical signal into an optical signal in an optical communication network, determines the information transmission rate and capacity of the optical communication network, and therefore the performance, especially the loss, of the modulator needs to be focused. Currently, the main modulator materials include silicon, silicon nitride, indium phosphide, lithium niobate, etc., where the natural plane of dissociation of Si is (111) and dissociation can also be achieved at the (110) plane, the plane of dissociation of InP is (110) (Ws Lei, et al, "dimension isolation technologies for advanced packaging: a critical review", j. Vac, sci. Technology. B, vol 30, 2012), the silicon nitride material plane of broadband modulators is not accurately determined in relation to the composition ratio (SixNy), and the plane of lithium niobate for high speed modulators is not in the standard orientation (0112). In addition, different materials can be bonded for multiple times to form more complex composite materials. In the face of modulators of different material systems, a general universal modulator structure and a preparation method are provided, and it is very important that an end face structure with low roughness can be obtained to realize a modulator with low loss.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides an optical modulator structure capable of realizing low roughness of an end face and a preparation method thereof, aiming at solving the problem of rough end face in the process of packaging optical modulators made of different materials; the end face with low roughness is obtained by adopting an optimized structure and a processing technology, and the method is suitable for the optical modulator packaging technology of various types of materials.
The first purpose of the present invention is to provide an optical modulator structure capable of achieving low roughness of end surfaces, which comprises, from bottom to top: the photoelectric composite film comprises a substrate layer, an optical transition layer, an optical function layer, an electro-optical interconnection layer, a coating buffer layer, an adhesion fixing layer and an accompanying sheet; wherein:
the refractive index of the material of the optical transition layer is not higher than that of the material of the optical function layer;
the optical function layer is a light guide layer; the electro-optical interconnection layer is an electric signal transmission channel.
Preferably, the light guide layer is one or more of a strip waveguide, a ridge waveguide, a circular waveguide, a slit waveguide and a diffusion waveguide.
Preferably, the optical function layer is a light guide layer made of a single material or a composite light guide layer made of M materials; m is a natural number greater than 1.
Preferably, the electro-optical interconnection layer adopts coplanar traveling wave electrodes or coplanar lumped electrodes; the electro-optical interconnection layer is positioned on the upper surface of the optical function layer or embedded into the optical function layer.
Preferably, an optical cladding layer is arranged between the optical function layer and the electro-optical interconnection layer.
Preferably, the refractive index of the material of the optical cladding layer is not higher than that of the material of the optical functional layer; the optical coating layer is made of SiO 2 、Al 2 O 3 、SiO x N y SU-8 and polymethyl methacrylate.
Preferably, the coating buffer layer is of a one-layer structure or a two-layer structure, when a two-layer structure is adopted, the second layer is made of the same material as the first layer, and the second layer can cover the whole surface of the chip or only covers the edge of the chip.
Preferably, the adhesive fixing layer is made of adhesive material and is coated on the whole or partial area of the chip on the coating buffer layer.
Preferably, the substrate layer is made of Si or SiO 2 、Al 2 O 3 、LiNbO 3 One or more of InP; the material of optics transition layer and optical function layer is one or more in polymethyl methacrylate, fluorine-containing polyimide, the benzocyclobutene, or the material of optics transition layer and optical function layer is refractive index and is higher than 1.5's dielectric material, the material of electro-optical interconnection layer is single component's metal material or alloy material, but the material of coating buffer layer is for having the material of mobility spin coating and solidification, but the material of adhesion fixed layer is the stickness material of polymer or the material mixture that contains the polymer.
The second purpose of the invention is to provide a method for preparing an optical modulator structure capable of realizing low roughness of the end face, which comprises the following steps:
the method comprises the following steps: preparing a graphical waveguide structure on an optical function layer by adopting photoresist or metal as a mask on a wafer material containing a substrate layer, an optical transition layer and the optical function layer through photoetching and etching processes;
step two: adopting electron beam evaporation or magnetron sputtering growth, and matching with photoetching and etching processes to prepare an electro-optical interconnection layer;
step three: spin-coating and curing the optical function layer and the electro-optical interconnection layer to prepare a coating buffer layer, and when the coating buffer layer adopts a two-layer structure, performing partial spin-coating and curing on the first layer after the spin-coating and curing on the second layer;
step four: cutting the position of the chip, which needs to be subjected to end face polishing, to expose the end face;
step five: coating an adhesion fixing layer on the coating buffer layer of the cut chip;
step six: pressing and attaching the auxiliary sheet to the adhesive fixing layer by using the auxiliary sheet with the same size as the chip;
step seven: placing the chip and the accompanying sheet into a fixture, pressing, bonding and fixing, and polishing the chip by a polyurethane polishing disc;
step eight: after polishing, the glass is placed in a glue removing solution, the coating buffer layer is removed, and the accompanying sheet and the adhesion fixing layer can automatically separate along with the removal of the coating buffer layer.
The beneficial effect of this application is:
1. the invention adopts the coating buffer layer and the adhesion fixing layer, and is matched with the accompanying sheet and the clamp, so that the effect of fixing the chip can be well achieved, the position of the chip is more stable in the grinding and polishing process, and the end surface roughness is lower.
2. The coating buffer layer is arranged below the adhesion fixing layer, so that the pollution and damage to the chip caused by the larger viscosity of the adhesion fixing layer and the possible external force at the end face in the grinding and polishing process can be avoided, and the coating buffer layer can be directly removed in the process of removing the adhesive after grinding and polishing, so that the adhesion fixing layer can be separated from the chip, and the surface cleanliness of the chip is further improved.
3. The coating buffer layer adopted in the invention wraps the optical function layer and the electro-optical interconnection layer, so that the problems of edge cracking and edge breakage caused by a graphical structure and a non-positive direction material dissociation surface are well inhibited in the cutting and polishing process, and the end surface flatness is improved.
4. According to the preparation method provided by the invention, the surface stress caused by fixture fixing can be well distributed by adopting the accompanying sheet, and the risk of chip cracking caused by uneven pressurization in fixing is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
FIG. 1 is a front view of a preferred embodiment of the present application;
FIG. 2 is a block diagram of a preferred embodiment of the present application;
FIG. 3 is a partial flow diagram of a preferred embodiment of the present application; displaying steps a to f;
FIG. 4 is a partial flow diagram of a preferred embodiment of the present application; for displaying step g;
FIG. 5 is a partial flow diagram of a preferred embodiment of the present application; for displaying step h.
Wherein: 101. a substrate layer; 102. an optical transition layer; 103. an optically functional layer; 104. an electro-optical interconnect layer; 105. coating a buffer layer; 106. adhering a fixing layer; 107. an optical cladding layer; 200. and (5) carrying out accompany.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the accompanying drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the present application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate an orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used in other meanings besides orientation or positional relationship, for example, the term "upper" may also be used in some cases to indicate a certain attaching or connecting relationship. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "mounted," "disposed," "provided," "connected," and "sleeved" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Referring to fig. 1 to 4, an optical modulator structure capable of achieving low end surface roughness includes, from bottom to top, a substrate layer 101, an optical transition layer 102, an optical function layer 103, an electro-optical interconnection layer 104, a coating buffer layer 105, an adhesion fixing layer 106, and a chip 200; wherein:
the substrate layer 101, the optical transition layer 102 and the optical function layer 103 may be made of the same optical material, or may be made of different optical materials, wherein a material refractive index of the optical transition layer 102 is not higher than a material refractive index of the optical function layer 103;
the optical function layer 103 is a light guide layer, and the light guide region is one or more layers of strip waveguides, ridge waveguides, circular waveguides, slit waveguides and diffusion waveguides in the light guide layer;
the optical function layer 103 may be a light guide layer made of a single material, or may be a composite light guide layer made of two or more materials;
the electro-optical interconnection layer 104 is an electric signal transmission channel and adopts a coplanar traveling wave electrode or a lumped electrode;
the electro-optical interconnection layer 104 is made of metal materials and is arranged above the optical function layer 103, or is horizontal to the optical function layer 103, or is embedded into the optical function layer 103;
an optical cladding layer 107 can be selectively added between the optical function layer 103 and the electro-optical interconnection layer 104;
the refractive index of the material of the optical cladding layer 107 is not higher than that of the optical functional layer 103;
the coating buffer layer 105 is made of a material which can be flowable, spin-coated and cured in a natural environment, a heating environment or an irradiation environment;
the coating buffer layer 105 may have a one-layer or two-layer structure, and when the two-layer structure is adopted, the second layer is made of the same material as the first layer, and the second layer may cover the whole surface of the chip or only the edge of the chip.
The adhesive fixing layer 106 is made of a material with viscosity, and is coated on the whole surface or partial area of the chip coated on the buffer layer;
the substrate layer 101 may be selected from Si and quartz (SiO) 2 ) Sapphire (Al) 2 O 3 ）、LiNbO 3 For the optical device substrate such as InP, the optical transition layer 102 and the optical function layer 103 may be made of polymer materials such as PMMA (polymethyl methacrylate), PI (fluorine-containing polyimide), BCB (benzocyclobutene), or Si, siC, liNbO3, si x N y 、SiO x N y A dielectric material having a refractive index higher than 1.5, such as InP, a metal material or an alloy material thereof, such as Au, al, cr, ni, ti, and Cu, is used as the electro-optical interconnection layer 104, a material that is spin-coatable and curable with fluidity, such as PI (fluorine-containing polyimide), BCB (benzocyclobutene), PMMA (polymethyl methacrylate), epoxy resin, photosensitive ink, and photoresist, is used as the coating buffer layer 105, and a polymer, such as BCB (benzocyclobutene), PMMA (polymethyl methacrylate), cyanoacrylate, and paraffin, or a polymer containing such as BCB, PMMA (polymethyl methacrylate), cyanoacrylate, and paraffin is used as the adhesion fixing layer 106, or a material containing such a polymer or a polymerA viscous material of a mixture of the above substances,
the material of the optical cladding layer 107 which is selectively added adopts SiO 2 、Al 2 O 3 、SiO x N y SU-8 and polymethyl methacrylate.
A method for manufacturing the optical device structure capable of realizing low roughness of the end face comprises the following steps:
step a: through a series of photoetching and etching processes, photoresist or metal is adopted as a mask on a wafer material containing a substrate layer 101, an optical transition layer 102 and an optical function layer 103;
step b: preparing an electro-optical interconnection layer 104 by adopting electron beam evaporation or magnetron sputtering growth and matching with photoetching and etching processes;
step c: spin-coating and curing the optical function layer 103 and the electro-optical interconnection layer 104 to prepare a coating buffer layer 105, and when a two-layer structure is adopted, the first layer is subjected to spin-coating and curing and then the second layer is subjected to local spin-coating and curing;
step d: cutting the position of the chip, which needs to be subjected to end surface polishing, to expose an end surface;
step e: coating an adhesive fixing layer 106 on the coating buffer layer 105 of the cut chip;
step f: pressing and adhering the accompanying sheet 200 on the adhesion fixing layer 106 by using the accompanying sheet 200 with the same size as the chip;
step g: placing the chip and the accompanying sheet 200 in a fixture integrally, finishing pressurization bonding and fixation, and polishing and grinding the chip through a polyurethane polishing disc;
step h: after polishing, the wafer is placed in a degumming solution to remove the coating buffer layer 105, and the cosheet 200 and the adhesive fixing layer 106 are automatically separated along with the removal of the coating buffer layer 105.
As shown in FIG. 1, the basic structure of the modulator structure capable of realizing low roughness of the end face comprises a substrate layer 101, an optical transition layer 102, an optical function layer 103, an electro-optical interconnection layer 104, a coating buffer layer 105 and an adhesion fixing layer 106. The substrate layer 101 is used for supporting a wafer, the optical transition layer 102 is a transition layer between the substrate layer 101 and the optical function layer 103 and has functions of bonding, separation and the like, the optical function layer 103 is a light guide layer of a device, light signals can be guided to be transmitted in the layer through various optical waveguides, the layer of waveguides can be formed by growing, etching or diffusing one or more materials, the electro-optical interconnection layer 104 is an electric signal conducting layer and is used for providing a metal signal passage for electric regulation of a modulator, the buffer layer 105 is coated to serve as a buffer layer of the adhesion fixing layer 106, the optical function layer 103 and the electro-optical interconnection layer 104, the effect of protecting the optical function layer 103 and the electro-optical interconnection layer 104 in a grinding and polishing process can be well achieved, a structural supporting effect is provided for end face grinding and polishing, the adhesion fixing layer 106 fixes a chip and the accompanying sheet 200, and the accompanying sheet 200 is used for enabling the stress of the chip to be uniform in a fixture and avoiding chip fragmentation caused by overlarge local stress on the surface of the chip.
As shown in fig. 2 and 3, when the buffer layer 105 is a double-layer structure, the second layer is only located at the two end edges of the chip to be polished, and the adhesive fixing layer 106 may not cover the whole surface of the chip.
As shown in fig. 3 to 5, the method for preparing the optimized structure provided by the present invention comprises eight steps, specifically comprising:
the method comprises the following steps: through a series of photoetching and etching processes, 20-20 mm thick Si is adopted as a substrate layer 101, and SiO is adopted as an optical transition layer 102 2 The optically functional layer 103 is Si 3 N 4 On the wafer material, a photoresist is used as a mask, and a strip-shaped waveguide structure is prepared on the optical function layer 103;
step two: adopting electron beam evaporation growth, and matching with photoetching and etching processes to prepare an electro-optical interconnection layer 104 of a traveling wave electrode structure, wherein the material is Au;
step three: spin coating and curing on the optical function layer 103 and the electro-optical interconnection layer 104 to prepare a coating buffer layer 105, selecting AZ5214 photoresist, rotating at 3000rpm, curing at 90 ℃, and when adopting a two-layer structure, partially spin coating and curing a second layer after the first layer is spin-coated and cured;
step four: taking the position 2mm away from the edge of the chip as the position needing end face polishing, and cutting the chip at the position to expose the end face;
step five: coating an adhesion fixing layer 106 on the coating buffer layer 105 of the cut chip, wherein the material is 502 glue, and the main component is cyanoacrylate;
step six: using a 20-20 mm Si chip 200 with the same size as the chip, and pressing and adhering the chip 200 on the adhesive fixing layer 106;
step seven: placing the chip and the accompanying sheet 200 in a fixture integrally, pressing, bonding and fixing, and polishing the chip through a polyurethane polishing disc;
step eight: after polishing, the wafer is placed in a photoresist degumming solution, the coating buffer layer 105 is removed, and the accompanying wafer 200 and the adhesive fixing layer 106 are automatically separated along with the removal of the coating buffer layer 105.
Compared with a chip without the polishing solution, the chip provided by the invention is cleaner and smoother in polished end face.
The coating buffer layer 105 and the adhesion fixing layer 106 are adopted, the auxiliary sheet 200 and the clamp are matched, the effect of fixing the chip can be well achieved, the position of the chip is more stable in the grinding and polishing process, the end face roughness is lower, the phenomena that the adhesion of the adhesion fixing layer 106 is large and the chip is polluted and damaged by possible external force at the end face in the grinding and polishing process can be avoided, in the process of removing the adhesive after grinding and polishing, the coating buffer layer 105 can be directly removed, the adhesion fixing layer 106 can be separated from the chip, and the surface cleanliness of the chip is further improved. In addition, the optical function layer 103 and the electro-optical interconnection layer 104 are wrapped by the coating buffer layer 105, so that the problems of edge cracking and edge chipping caused by a graphical structure and a non-positive direction material dissociation surface are well inhibited in the cutting and polishing process, and the end surface flatness is improved.
According to the preparation method provided by the invention, the accompanying sheet 200 adopted can well share the surface stress caused by fixture fixing, and the risk of chip cracking caused by uneven pressurization in fixing is avoided.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and any simple modifications, equivalent variations and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. The utility model provides an optical modulator structure that can realize terminal surface low roughness which from the bottom up includes in proper order: the photoelectric composite film comprises a substrate layer, an optical transition layer, an optical function layer, an electro-optical interconnection layer, a coating buffer layer, an adhesion fixing layer and an accompanying sheet; wherein:
the refractive index of the material of the optical transition layer is not higher than that of the material of the optical function layer;
the optical function layer is a light guide layer; the electro-optical interconnection layer is an electric signal transmission channel.
2. The structure of the optical modulator capable of realizing the low roughness of the end face according to claim 1, wherein the light guiding layer is one or more layers of a strip waveguide, a ridge waveguide, a circular waveguide, a slit waveguide and a diffusion waveguide.
3. The optical modulator structure according to claim 1, wherein the optically functional layer is a light guiding layer made of a single material or a composite light guiding layer made of M materials; m is a natural number greater than 1.
4. The optical modulator structure capable of realizing low end surface roughness according to claim 1, wherein the electro-optical interconnection layer adopts coplanar traveling wave electrodes or coplanar lumped electrodes; the electro-optical interconnection layer is positioned on the upper surface of the optical function layer or embedded into the optical function layer.
5. The optical modulator structure of claim 1, wherein: and an optical coating layer is arranged between the optical function layer and the electro-optical interconnection layer.
6. The optical modulator structure of claim 5, wherein: the refractive index of the material of the optical cladding layer is not higher than that of the material of the optical functional layer; the optical coating layer is made of SiO 2 、Al 2 O 3 、SiO x N y SU-8 and polymethyl methacrylate.
7. The optical modulator structure of claim 1, wherein: the coating buffer layer is of a one-layer structure or a two-layer structure, when the two-layer structure is adopted, the second layer is made of the same material as the first layer, and covers the whole surface of the chip or only covers the edge of the chip.
8. The optical modulator structure of claim 1, wherein: the adhesive fixing layer is made of adhesive material and is coated on the whole or partial area of the chip coated on the buffer layer.
9. The optical modulator structure of claim 1, wherein: the substrate layer is made of Si and SiO 2 、Al 2 O 3 、LiNbO 3 One or more of InP; the material of optics transition layer and optical function layer is one or more in polymethyl methacrylate, fluorine-containing polyimide, the benzocyclobutene, or the material of optics transition layer and optical function layer is refractive index and is higher than 1.5's dielectric material, the material of electro-optical interconnection layer is single component's metal material or alloy material, the material of coating buffer layer is the material that has mobility spin coating and solidification, the material of adhesion fixed bed is the stickness material of polymer or the material mixture that contains the polymer.
10. A method for preparing an optical modulator structure capable of realizing low roughness of end face, which is used for preparing the optical modulator structure capable of realizing low roughness of end face according to any one of claims 1 to 9, and comprises the following steps:
the method comprises the following steps: preparing a graphical waveguide structure on an optical function layer by adopting photoresist or metal as a mask on a wafer material containing a substrate layer, an optical transition layer and the optical function layer through photoetching and etching processes;
step two: adopting electron beam evaporation or magnetron sputtering growth, and matching with photoetching and etching processes to prepare an electro-optical interconnection layer;
step three: spin coating and curing on the optical function layer and the electro-optical interconnection layer to prepare a coating buffer layer, and when the coating buffer layer adopts a two-layer structure, performing partial spin coating and curing on the first layer after the spin coating and curing is completed to cure the second layer;
step four: cutting the position of the chip, which needs to be subjected to end surface polishing, to expose an end surface;
step five: coating an adhesion fixing layer on the coating buffer layer of the chip;
step six: pressing and attaching the auxiliary sheet to the adhesive fixing layer by using the auxiliary sheet with the same size as the chip;
step seven: placing the chip and the accompanying sheet into a fixture, pressing, bonding and fixing, and polishing the chip by a polyurethane polishing disc;
step eight: after polishing, the glass is placed in a glue removing solution, the coating buffer layer is removed, and the accompanying sheet and the adhesion fixing layer can automatically separate along with the removal of the coating buffer layer.
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Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0667045A (en) * | 1992-08-21 | 1994-03-11 | Alps Electric Co Ltd | Optical device and its production |
| TWI244171B (en) * | 2003-07-15 | 2005-11-21 | Siliconware Precision Industries Co Ltd | Semiconductor package and method for fabricating the same |
| CN101188259A (en) * | 2006-11-15 | 2008-05-28 | 杭州士兰明芯科技有限公司 | Low thermal resisting LED chip and making method |
| CN105690239B (en) * | 2014-11-24 | 2018-02-16 | 上海亨通光电科技有限公司 | LiNbO3Integrated optical device chip Ginding process |
| CN108732795A (en) * | 2017-04-14 | 2018-11-02 | 天津领芯科技发展有限公司 | A kind of silicon substrate lithium niobate high-speed optical modulator and preparation method thereof |
| JP6646187B1 (en) * | 2018-11-08 | 2020-02-14 | 日本碍子株式会社 | Composite substrate for electro-optical element and method of manufacturing the same |
| CN113467109A (en) * | 2020-03-31 | 2021-10-01 | Tdk株式会社 | Optical modulator |
| CN114695283A (en) * | 2020-12-28 | 2022-07-01 | 欣兴电子股份有限公司 | Chip packaging structure and manufacturing method thereof |
| CN215342513U (en) * | 2021-02-26 | 2021-12-28 | 中国电子科技集团公司第二十研究所 | Device for batch eutectic welding of single-chip microwave integrated circuit chips |
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