CN114686057B - Anti-reflection coating composition for patterning and patterning method - Google Patents
Anti-reflection coating composition for patterning and patterning method Download PDFInfo
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- CN114686057B CN114686057B CN202011606828.3A CN202011606828A CN114686057B CN 114686057 B CN114686057 B CN 114686057B CN 202011606828 A CN202011606828 A CN 202011606828A CN 114686057 B CN114686057 B CN 114686057B
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000000059 patterning Methods 0.000 title claims abstract description 35
- 239000008199 coating composition Substances 0.000 title description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 239000000975 dye Substances 0.000 claims description 16
- 238000000206 photolithography Methods 0.000 claims description 11
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 229920003169 water-soluble polymer Polymers 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 62
- 239000006117 anti-reflective coating Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000001459 lithography Methods 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 239000011295 pitch Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 229920000877 Melamine resin Polymers 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- -1 for example Polymers 0.000 description 1
- ZHUXMBYIONRQQX-UHFFFAOYSA-N hydroxidodioxidocarbon(.) Chemical compound [O]C(O)=O ZHUXMBYIONRQQX-UHFFFAOYSA-N 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
- C09D129/02—Homopolymers or copolymers of unsaturated alcohols
- C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The application relates to a water-soluble anti-reflection coating for patterning and a method for patterning by using the water-soluble anti-reflection coating, which can be used for avoiding the problems of bad effect and the like caused by the reaction of directly coating a negative photoresist layer on a positive photoresist layer as the water-soluble anti-reflection coating is coated between the positive photoresist layer and the negative photoresist layer, so that the double photoresist layer coating of the positive photoresist layer and the negative photoresist layer can be well carried out, the process flow is greatly simplified, and the process time and the cost are saved.
Description
Technical Field
The present application relates to a method for manufacturing a semiconductor device, and more particularly, to an antireflective coating composition for patterning and a patterning method using the antireflective coating composition.
Background
Photolithography (Photolithography) is a commonly used patterning method in semiconductor manufacturing processes. However, the minimum Pitch (Pitch) of the formed pattern is limited by the photolithography process, and as the integrated circuit is developed toward smaller size and higher density, challenges are continuously presented to the photolithography process, and development of the photolithography machine is from G-line (G-line lithography), 365nm I-line (I-line lithography), 248nm DUV (deep ultraviolet lithography), 193nm ArF excimer lithography and ArF immersion lithography, and EUV (extreme ultraviolet lithography), leading to continuous reduction of line width dimensions. With the continuous rise of the cost of the photoetching machine, the photoetching development cost is increased by times.
How to extend the process lifetime of a lithographic machine so that it can form smaller critical dimensions is a challenge for the lithographic process. Typically, the limiting Resolution (Resolution Limit) of a deep ultraviolet lithography machine is 0.045um. If the critical dimensions required for integrated circuit processing are below 0.045um, EUV lithography machines are used for lithography, which means a significant increase in cost, and challenges to the lithography process are presented as to how to extend the process lifetime of the lithography machine to a smaller minimum pitch. Therefore, how to obtain smaller minimum pitch under the premise of controlling cost is a technical problem to be solved by those skilled in the art.
Therefore, in order to obtain smaller minimum pitches, multiple patterning techniques for performing multiple exposure to multiple lithography, including double patterning (Double Patterning Technology, DPT), quad patterning (Quadrable Patterning Technology), etc., are all methods that enable the lithography process to overcome the lithography limit resolution, for example, double patterning commonly used is Photo-etching-Photo-etching (PEPE). However, this requires two separate photolithography-etching processes, which increases the time and cost of the overall process.
Disclosure of Invention
The purpose of the application is realized through the following technical scheme:
in accordance with one or more embodiments, the present application discloses an antireflective coating composition comprising: 90-99.8wt% of water-soluble polymer and 0.2-10wt% of water-soluble dye.
In accordance with one or more embodiments, the present application also discloses a patterning method comprising:
coating a positive photoresist layer on the layer to be patterned;
coating a water-soluble anti-reflection coating on the positive photoresist layer;
coating a negative photoresist layer on the water-soluble anti-reflection coating;
patterning the negative photoresist layer by photolithography;
removing the water-soluble anti-reflection coating;
the positive photoresist layer is patterned by photolithography.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. The objectives and other advantages of the application will be realized and attained by the structure particularly pointed out in the written description and claims thereof as well as the appended drawings.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
fig. 1-5 are schematic diagrams of patterning processes according to embodiments of the present application.
Detailed Description
The present application will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the application are shown. However, the present application is not limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art. In the drawings, the thickness of layers and regions may be exaggerated for clarity. Like numbers refer to like elements throughout. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or extending "onto" another element, it can be directly on or extend directly onto the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the spirit of the present application.
Moreover, relative terms, such as "lower" or "bottom" and "upper" or "top," are used herein to describe one element's relationship to another element as illustrated in the figures. It should be understood that relative terms include different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as being below another element would then be oriented on top of the other element. The exemplary term "lower" therefore includes both "lower" and "upper" directions, depending on the particular orientation of the figure. Likewise, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented above the other elements. Thus, the exemplary terms "below" or "beneath" encompass both an orientation of above and below.
Embodiments of the present application are described herein with reference to cross-sectional views (and/or plan views) that schematically illustrate idealized embodiments of the present application. Likewise, deviations from the schematic shape due to, for example, manufacturing processes and/or tolerances, may be expected. Thus, embodiments of the present application are not to be considered as limiting the specific shape of the regions described herein, but rather as including deviations in shape that result, for example, from manufacturing. For example, etched regions illustrated or described as rectangular typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the present application.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. Those skilled in the art will appreciate that a reference to a structural or functional component configured adjacent to another component may have portions that overlap or underlie the other component.
The present application discloses a method for manufacturing a semiconductor structure, which can be applied to any suitable multiple patterning manufacturing method such as a double patterning manufacturing method, a quadruple patterning manufacturing method, etc., and is not limited to the multiple patterning manufacturing method, and can be applied to the manufacturing method disclosed in the present application as long as a side wall is formed and utilized therein. The following examples take the sidewall structure forming method in the double patterning manufacturing method as an example, but as mentioned above, the present application is not limited thereto, and the sidewall structure manufacturing process according to one embodiment of the present application is specifically described below.
As shown in fig. 1, in the embodiment of the present application, a component to be patterned, for example, a semiconductor substrate, for example, a substrate of common Si, siGe, or the like, a semiconductor substrate including a circuit element of a MOS (Metal Oxide Semiconductor) transistor, for example, a semiconductor substrate on which functional components such as a gate electrode, a source/drain electrode, a bit line, or the like are formed may be provided, and of course, the film 100 to be patterned may be a specific film 100 to be patterned, for example, an oxide or nitride film, and may be formed by, for example, chemical Vapor Deposition (CVD), plasma Enhanced Chemical Vapor Deposition (PECVD), physical Vapor Deposition (PVD), or the like.
Subsequently, a mask layer 200 may be formed on the surface of the film layer 100 to be patterned. The mask layer 200 may be formed by spin coating or the like, for example, by selecting a material such as spin-on-carbon (SOC), hard mask spin-on (SOH), or Amorphous Carbon (ACL).
Subsequently, an underlayer antireflective coating 300 (BARC) may be formed on the surface of the mask layer 200, and the antireflective coating 300 may be formed, for example, by spin coating or the like, with the option of a conventional developer-soluble ARC.
Subsequently, a positive photoresist layer (PTD) 400 may be formed on the surface of the underlying antireflective coating 300, which may comprise, for example, a chemically amplified photoresist that may be formed by a photoacid-catalyzed deprotection reaction of acid labile groups of one or more components of the composition, such as ester groups having tertiary-acyclic alkyl carbons covalently linked to the carboxyl oxygen of the ester, acetal photoacid labile groups, and the like, that render the exposed regions of the photoresist layer more soluble in an aqueous developer than the unexposed regions, may be formed using spin coating or the like.
Subsequently, a water-soluble anti-reflective coating layer 500 may be formed on the surface of the positive photoresist layer 400, the water-soluble anti-reflective coating layer 500 including a water-soluble polymer and a water-soluble dye, wherein the water-soluble polymer may be one or a combination of two or more of polyvinyl alcohol (PVA), polyacrylic acid (PAA), polyvinylpyrrolidone (PVP), etc., preferably polyvinyl alcohol (PVA), particularly preferably polyvinyl alcohol (PVA) having a molecular weight of 1000 to 20000g/mol; wherein the water-soluble dye may be a water-soluble dye of the YELLOW series such as AY36, AY3, AY23, a water-soluble dye of the RED series such as AR131, 1R, AV54, a water-soluble dye of the VIOLET series such as AV17, AV43, AV76, a water-soluble dye of the ORANGE series such as AO10, AO7, AO8, or a combination of two or more of the above dyes; preferably, the water-soluble anti-reflective coating 500 includes 90 to 99.8wt% of the water-soluble polymer and 0.2 to 10wt% of the water-soluble dye in terms of mass%.
Subsequently, a negative photoresist layer 600 (NTD) may be formed on the surface of the water-soluble anti-reflective coating 500, which may include, for example, a crosslinking component, typically an amine-based crosslinking agent such as melamine, for example, melamine resin, may be formed by spin coating or the like.
Subsequently, a first photolithography is performed to pattern the negative photoresist layer 600, the exposure may be an immersion scanning exposure using an immersion lithography tool, such as 193nm ArF, and then the negative photoresist layer 600 may be patterned by development, as shown in FIG. 2, and exposing portions of the surface of the water-soluble anti-reflective coating 500, with suitable developer and development techniques being well known in the art in light of the particular material of the negative photoresist layer.
Subsequently, as shown in fig. 3, a developing process is performed on a portion of the surface of the water-soluble anti-reflection coating 500 exposed after patterning the negative photoresist layer 600 to pattern the water-soluble anti-reflection coating 500 and expose the positive photoresist layer 400, and the developer may be water or ethanol.
Subsequently, as shown in FIG. 4, a second photolithography is performed to pattern the positive photoresist layer 400, which may be immersion scanning exposure using an immersion lithography tool such as 193nm ArF, and then the positive photoresist layer 400 may be patterned by development to expose a portion of the surface of the bottom antireflective coating 300, with suitable developer and development techniques being well known in the art based on the particular material of the positive photoresist layer.
Subsequently, the mask layer 200 is etched according to the pattern of the double exposure, the underlying anti-reflective coating 300 may be patterned by a developing process, the developer and developing techniques are well known techniques according to the specific materials used for the underlying anti-reflective coating, the mask layer 200 may then be etched by conventional techniques such as dry etching or wet etching, and the underlying anti-reflective coating, the positive photoresist layer, the water-soluble anti-reflective coating and the negative photoresist layer remaining over the mask layer may then be removed by, for example, a wet photoresist removal process, to form the patterned mask layer.
Subsequently, the layer to be patterned 100 is etched according to the patterned mask layer 200, and conventional techniques such as dry etching or wet etching may be used, and then the remaining mask layer 200 is removed to obtain a patterned layer satisfying the minimum pitch requirement, as shown in fig. 5.
Since the positive photoresist layer and the negative photoresist layer are usually photoresist materials dissolved in the same solvent, if the negative photoresist layer is directly coated on the positive photoresist layer, a mutual reaction may occur to cause a defect. In order to solve the problems, the water-soluble anti-reflection coating is coated between the positive photoresist layer and the negative photoresist layer, so that direct contact of the positive photoresist layer and the negative photoresist layer is avoided, the water-soluble anti-reflection coating is not dissolved in solvents in which the negative photoresist layer and the positive photoresist layer can be dissolved, and double photoresist layer coating of the positive photoresist layer and the negative photoresist layer can be well carried out. Meanwhile, as the double photoresist layers are coated, the process method can directly carry out photoetching on the positive photoresist layer again after photoetching on the negative photoresist layer and developing the water-soluble anti-reflection coating, thereby avoiding the PEPE process of carrying out first photoetching after coating the first photoresist layer and carrying out second photoetching after coating the second photoresist layer as in the prior art, greatly simplifying the process flow and saving the process time and the cost.
In the above description, technical details of patterning, etching, and the like of each layer are not described in detail. Those skilled in the art will appreciate that layers, regions, etc. of the desired shape may be formed by a variety of techniques. In addition, to form the same structure, those skilled in the art can also devise methods that are not exactly the same as those described above. In addition, although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (5)
1. A patterning method, comprising:
coating a positive photoresist layer on the layer to be patterned;
coating a water-soluble anti-reflection coating on the positive photoresist layer;
coating a negative photoresist layer on the water-soluble anti-reflection coating;
patterning the negative photoresist layer by photolithography;
developing a part of the surface of the water-soluble anti-reflection coating exposed after the negative photoresist layer is patterned to pattern the water-soluble anti-reflection coating and expose the positive photoresist layer;
patterning the positive photoresist layer by photolithography;
the water-soluble anti-reflection coating comprises 90-99.8wt% of water-soluble polymer and 0.2-10wt% of water-soluble dye;
the water-soluble polymer is one or the combination of more than two of polyvinyl alcohol, polyacrylic acid and polyvinylpyrrolidone;
the water-soluble dye is one of water-soluble dyes AY36, AY3 and AY23 of a YELLOW series, water-soluble dyes AR131 and 1R, AV of a RED series, water-soluble dyes AV17, AV43 and AV76 of a VIOLET series, water-soluble dyes AO10, AO7 and AO8 of an ORANGE series, or a combination of two or more dyes.
2. A patterning method according to claim 1, wherein:
the developer used in the developing treatment is water or ethanol.
3. A patterning method according to claim 1, wherein:
coating a positive photoresist layer on the layer to be patterned includes: and coating a mask layer on the layer to be patterned, coating a bottom anti-reflection coating on the mask layer, and coating the positive photoresist layer on the bottom anti-reflection coating.
4. A patterning process according to claim 3, wherein:
after patterning the positive photoresist layer, further comprising,
patterning the mask layer;
and patterning the layer to be patterned.
5. A patterning method according to claim 1, wherein:
the water-soluble polymer is polyvinyl alcohol with the molecular weight of 1000-20000 g/mol.
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|---|---|---|---|---|
| US5994430A (en) * | 1997-04-30 | 1999-11-30 | Clariant Finance Bvi) Limited | Antireflective coating compositions for photoresist compositions and use thereof |
| US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
| CN103309164A (en) * | 2012-03-09 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | Formation method for semiconductor structure |
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| KR970004447B1 (en) * | 1993-09-08 | 1997-03-27 | 삼성전자 주식회사 | A method for forming anti-reflect-film and its application to manufacturing semiconductor devices |
| JP3694703B2 (en) * | 1996-04-25 | 2005-09-14 | Ａｚエレクトロニックマテリアルズ株式会社 | Anti-reflection coating composition |
| US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
| KR100822621B1 (en) * | 2007-04-06 | 2008-04-16 | 주식회사 하이닉스반도체 | Method of forming a micro pattern in a semiconductor device |
| CN103365092B (en) * | 2012-03-31 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Dual photoresist and disposal route thereof |
| CN105632886B (en) * | 2014-10-30 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
| CN108121156A (en) * | 2017-12-12 | 2018-06-05 | 深圳市晶特智造科技有限公司 | Photoresist step cutting pattern production method |
| CN110660733B (en) * | 2019-09-30 | 2022-02-01 | 上海华力集成电路制造有限公司 | Photoetching process method and dual damascene process method |
| CN111312657A (en) * | 2020-03-24 | 2020-06-19 | 上海华力集成电路制造有限公司 | Method for forming dual damascene pattern through double exposure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994430A (en) * | 1997-04-30 | 1999-11-30 | Clariant Finance Bvi) Limited | Antireflective coating compositions for photoresist compositions and use thereof |
| US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
| CN103309164A (en) * | 2012-03-09 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | Formation method for semiconductor structure |
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