CN114650019B - Amplifier circuit with arbitrary gain temperature coefficient - Google Patents
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Abstract
The invention discloses an amplifier circuit with any gain temperature coefficient, which comprises a transconductance generating circuit and a signal amplifierThe transconductance generating circuit is respectively connected with the signal amplifier circuit and the bias circuit and is used for respectively providing bias voltage for the signal amplifier circuit and the bias circuit; the bias circuit is used for providing bias voltage for the amplifier circuit. By the mode, the current temperature coefficient TC of the invention can be adjusted by adjusting the positive temperature coefficient p 、TC n Constant bias current I 0p 、I 0n Coefficient of proportionality k 1 、k 2 To realize the arbitrary adjustment of the temperature coefficient of the gain of the amplifier.
Description
Technical Field
The invention relates to the field of amplifier circuits, in particular to an amplifier circuit with any gain temperature coefficient.
Background
The conventional amplifier circuit structure is shown in fig. 5, and includes a coupling capacitor CC, a bias resistor Rb, an amplifying transistor M1, and a load resistor RL. The signal is input from the Vin end, output from the Vo end, and Vb provides bias voltage for the amplifying transistor.
The gain of a conventional amplifier is:
wherein gm is the transconductance of the amplifying transistor, un is the electron mobility, Cox is the thickness of the gate oxide layer of the transistor, W is the communication width of the transistor, L is the channel length of the transistor, ID is the drain current of the transistor, and RL is the load resistance.
Due to the large variation of electron mobility and transistor drain current with temperature. In addition, in different processes, under different bias voltages, the relationship between the electron mobility and the drain current along with the temperature change is different, so that the gain of the traditional amplifier circuit along with the temperature change is large, the gain temperature coefficient is uncertain, and the circuit performance is uncertain.
On the other hand, a temperature gain compensation circuit is usually required in the circuit system to compensate for the gain fluctuation of other circuits due to temperature change. And different system gains are different along with temperature fluctuation states, so that the amplifier with the arbitrarily adjustable gain temperature coefficient has wide and important application value.
Disclosure of Invention
In view of the above-mentioned deficiencies in the prior art, the present invention provides an amplifier circuit with an arbitrary gain temperature coefficient.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
an arbitrary gain temperature coefficient amplifier circuit comprises a transconductance generating circuit, a signal amplifier circuit and a bias circuit,
the transconductance generating circuit is respectively connected with the signal amplifier circuit and the bias circuit and is used for respectively providing bias voltage for the signal amplifier circuit and the bias circuit; the bias circuit is used for providing bias voltage for the amplifier circuit.
Further, the signal amplifier circuit comprises a coupling capacitor Cc and a bias resistor R b A signal amplifying transistor M1 and a load transistor M2, wherein one end of the coupling capacitor Cc is connected to the gate of the amplifying transistor M1, and the other end is connected to the input voltage signal; the bias resistor R b One end of the second resistor is connected with the grid electrode of the amplifying transistor M1, and the other end of the second resistor is connected with the output end of the transconductance generating circuit; the source electrode of the amplifying transistor M1 is grounded, and the drain electrode is connected with the drain electrode of the load transistor M2; the gate and source of the load transistor M2 are connected to the bias circuit.
Further, the bias circuit includes a transistor M b1 Transistor M b2 Transistor M b3 Transistor M b4 Wherein the transistor M b1 And a transistor M b4 Is connected to the transconductance generating circuit, the transistor M b4 Is grounded and has a drain connected to the transistor M b3 A source electrode of (a); the transistor M b1 Is grounded and has a drain connected to the transistor M b2 A source electrode of (a); the transistor M b1 And a transistor M b2 Are connected to the gate of the load transistor M2, and transistor M is connected to the drain of the load transistor M2 b2 Are interconnected with the source.
Further, the transconductance generating circuit comprises a positive temperature coefficient transconductance generating circuit and a negative temperature coefficient transconductance generating circuit, wherein when the negative temperature coefficient transconductance generating circuit is connected with the transistor M b4 A positive temperature coefficient transconductance generating circuit is connected with the transistor M b1 When the temperature coefficient amplifier circuit is used, the arbitrary gain temperature coefficient amplifier circuit generates positive temperature coefficient amplification output; when the PTC transconductance generating circuit is connected with the transistor M b1 A negative temperature coefficient transconductance generating circuit connected to the transistor M b4 And when the temperature coefficient amplifier circuit with any gain generates the negative temperature coefficient amplification output.
Further, the negative temperature coefficient transconductance generating circuit comprises a transistor M3, a transistor M4, a transistor M5, a transistor M6, a first error amplifier EA1, and a first drain voltage resistor R 1n A first positive temperature coefficient current source I PTATn A first constant current source I 0n The gates and the drains of the transistor M4 and the transistor M5 are interconnected, and the sources of the transistors are connected with a system voltage VCC; the gates of the transistor M4 and the transistor M5 are connected to the output terminal of the first error amplifier EA 1; the source of the transistor M5 is connected to a comparison terminal of the first error amplifier EA1 and to ground via the transistor M3; the drain and the gate of the transistor M3 are interconnected, and the drain is connected with the source of the transistor M5; the source of transistor M3 is connected to ground; the source of the transistor M6 is connected to the other comparison terminal of the first error amplifier EA1 and to ground through the transistor M4; the source of transistor M4 is connected to ground,the drain electrode is connected with the source electrode of the transistor M6, and the gate electrode is the output V of the negative temperature coefficient transconductance generating circuit b_neg (ii) a The source electrode of the transistor M6 also passes through a drain voltage resistor R in turn 1n And a first positive temperature coefficient current source I PTATn The series circuit of (1) is grounded; the source of the transistor M6 is also connected to a first constant current source I 0n Grounding; the transistor M3 and the transistor M4 are the same size, and the transistors M5 and M6 are the same size.
Further, the positive temperature coefficient transconductance generating circuit comprises a transistor M7, a transistor M8, a transistor M9, a transistor M10, a second error amplifier EA2 and a second drain voltage resistor R 1p A second constant current source I 0p A second positive temperature coefficient current source I PTATp The gates and the drains of the transistor M9 and the transistor M10 are interconnected, and the sources of the transistors are connected with a system voltage VCC; the gates of the transistor M9 and the transistor M10 are connected to the output terminal of the second error amplifier EA 2; the source of the transistor M9 is connected to a comparison terminal of the second error amplifier EA2 and to ground via the transistor M7; the drain and the gate of the transistor M7 are interconnected, and the drain is connected with the source of the transistor M9; the source of transistor M7 is connected to ground; the source of the transistor M10 is connected to the other comparison terminal of the second error amplifier EA2 and to ground through the transistor M8; the source of the transistor M8 is grounded, the drain is connected with the source of the transistor M10, and the gate is the output V of the negative temperature coefficient transconductance generating circuit b_pos (ii) a The source electrode of the transistor M10 also passes through a second drain voltage resistor R in turn 1p And a second constant current source I 0p The series circuit of (1) is grounded; the source of the transistor M10 is also connected with a second positive temperature coefficient current source I PTATp Grounding; the transistor M7 and the transistor M8 are the same size, and the transistor M9 and the transistor M10 are the same size.
Further, when the arbitrary gain temperature coefficient amplifier circuit generates a positive temperature coefficient amplification output, the output gain is:
wherein,
is the size ratio of the transistor M1 to the transistor M8;
is a transistor M b4 In proportion to the size of the transistor M8,
is a first positive temperature coefficient current source I PTATn The magnitude of the current generated is such that,
is a second positive temperature coefficient current source I PTATp The magnitude of the current generated is such that,
is a first drain voltage resistor R 1n The resistance value of (1);
is the second drain voltage resistor R 1p Resistance value;
the current value of the second constant current source;
the current value of the first constant current source.
Further, when the arbitrary gain temperature coefficient amplifier circuit generates a negative temperature coefficient amplified output, the output gain is:
wherein, among others,
ruler for transistor M1 and transistor M8Cun ratio;
is a transistor M b4 In proportion to the size of the transistor M8,
as a positive temperature coefficient current source I PTATn The magnitude of the current generated is such that,
is a second positive temperature coefficient current source I PTATp The magnitude of the current generated is such that,
is a first drain voltage resistor R 1n The resistance value of (1);
is the second drain voltage resistor R 1p Resistance value;
。
the invention has the following beneficial effects:
the amplifier circuit with any gain temperature coefficient has the function of adjusting the gain temperature coefficient randomly and accurately, can make up the defect that the gain of the traditional amplifier is uncertain along with the temperature fluctuation, and can be used for compensating the negative influence of the gain of other circuits in a system along with the temperature fluctuation, thereby improving the reliability of the whole system.
Drawings
Fig. 1 is a schematic diagram of a negative temperature coefficient transconductance generating circuit according to an embodiment of the invention.
Fig. 2 is a schematic diagram of a positive temperature coefficient transconductance generating circuit according to an embodiment of the invention.
Fig. 3 is a schematic diagram of a positive temperature coefficient amplifier circuit according to an embodiment of the invention.
FIG. 4 is a schematic diagram of a negative temperature coefficient amplifier according to an embodiment of the invention.
Fig. 5 is a circuit diagram of a conventional amplifier in the prior art.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
An arbitrary gain temperature coefficient amplifier circuit comprises a transconductance generating circuit, a signal amplifier circuit and a bias circuit,
the transconductance generating circuit is respectively connected with the signal amplifier circuit and the bias circuit and is used for respectively providing bias voltage for the signal amplifier circuit and the bias circuit; the bias circuit is used for providing bias voltage for the amplifier circuit.
Specifically, as shown in fig. 1, the negative temperature coefficient transconductance generating circuit includes a transistor M3, a transistor M4, a transistor M5, a transistor M6, a first error amplifier EA1, and a first drain voltage resistor R 1n A first positive temperature coefficient current source I PTATn A first constant current source I 0n The grid electrodes and the drain electrodes of the transistor M4 and the transistor M5 are mutually connected, and the source electrodes of the transistors are connected with a system voltage VCC; the gates of the transistor M4 and the transistor M5 are connected to the output terminal of the first error amplifier EA 1; the source of the transistor M5 is connected to a comparison terminal of the first error amplifier EA1 and to ground via the transistor M3; the drain and the gate of the transistor M3 are interconnected, and the drain is connected with the source of the transistor M5; the source of transistor M3 is grounded; the source of the transistor M6 is connected to the other comparison terminal of the first error amplifier EA1 and to ground through the transistor M4; the source of the transistor M4 is grounded, the drain is connected with the source of the transistor M6, and the gate is the output V of the negative temperature coefficient transconductance generating circuit b_neg (ii) a The source electrode of the transistor M6 also passes through a drain voltage resistor R in turn 1n And a first positive temperature coefficient current source I PTATn In the clusterThe connecting circuit is grounded; the source of the transistor M6 is also connected to a first constant current source I on Grounding; the transistor M3 and the transistor M4 are the same size, and the transistors M5 and M6 are the same size.
Transistor M in FIG. 1 3 /M 4 Having the same size, M 5 /M 6 Have the same dimensions. The negative feedback loop passes M through the error amplifier EA 3 Drain voltage and M 4 The drain voltages are clamped to be equal. Because M is 3 Gate and drain voltages being equal, M 4 Gate lower than drain voltage by resistance R 1n Voltage difference of (I) PTATn *R 1n (ii) a On the other hand, M 5 And M 6 Having the same drain current, M 3 Drain current and M 5 Same, M 4 Drain current, bias current I PTATn Bias current I 0n -I PTATn The sum being equal to M 6 Drain current, therefore M 3 And M 4 Has a drain current difference of I PTATn +I 0n -I PTATn I.e. I 0n . In which I PTATn Is a positive temperature coefficient current, I 0n Is a constant current. Thus, M 4 May be approximated as M 3 And M 4 Ratio of drain current difference to gate voltage difference, i.e. I 0n /(I PTATn *R 1n ). Due to I PTATn Has a positive temperature coefficient, so that the transconductance thereof has a negative temperature coefficient.
The positive temperature coefficient transconductance generating circuit comprises a transistor M7, a transistor M8, a transistor M9, a transistor M10, a second error amplifier EA2 and a second drain voltage resistor R 1p A second constant current source I 0p A second positive temperature coefficient current source I PTATp The gates and the drains of the transistor M9 and the transistor M10 are interconnected, and the sources of the transistors are connected with a system voltage VCC; the gates of the transistor M9 and the transistor M10 are connected to the output terminal of the second error amplifier EA 2; the source of the transistor M9 is connected to a comparison terminal of the second error amplifier EA2 and to ground via the transistor M7; the drain and the gate of the transistor M7 are interconnected, and the drain is connected with the source of the transistor M9; the source of transistor M7 is grounded; the source of transistor M10 is connected to the second errorThe other comparison terminal of the difference amplifier EA2 is connected to ground through a transistor M8; the source of the transistor M8 is grounded, the drain is connected with the source of the transistor M10, and the gate is the output V of the negative temperature coefficient transconductance generating circuit b_pos (ii) a The source electrode of the transistor M10 also passes through a second drain voltage resistor R in turn 1p And a second constant current source I 0p The series circuit of (a) is grounded; the source of the transistor M10 is also connected with a second positive temperature coefficient current source I PTATp Grounding; the transistor M7 and the transistor M8 are the same size, and the transistor M9 and the transistor M10 are the same size.
As shown in fig. 2, the transistor M 7 /M 8 Having the same size, M 9 /M 10 Have the same dimensions. The negative feedback loop passes M through the error amplifier EA 1 Drain voltage and M 2 The drain voltages are clamped to be equal. Because M is 7 Gate and drain voltages being equal, M 8 Gate lower than drain voltage by resistance R 1p Voltage difference of (I) 0p *R 1p (ii) a On the other hand, M 9 And M 10 Having the same drain current, M 7 Drain current and M 9 Same, M 8 Drain current, bias current I 0p Bias current I PTATp -I 0p The sum being equal to M 10 Drain current, therefore M 7 And M 8 Has a drain current difference of I 0p +I PTATp -I 0p I.e. I PTATp . In which I PTATp Is a positive temperature coefficient current, I 0p Is a constant current. Thus, M 2 May be approximated as M 7 And M 8 Ratio of drain current difference to gate voltage difference, i.e. I PTATp /(I 0p *R 1p ). Due to I PTATp Has a positive temperature coefficient, so that the transconductance thereof has a negative temperature coefficient.
The signal amplifier circuit includes a coupling capacitor Cc and a bias resistor R as shown in FIG. 3 or FIG. 4 b A signal amplifying transistor M1 and a load transistor M2, wherein one end of the coupling capacitor Cc is connected to the gate of the amplifying transistor M1, and the other end is connected to the input voltage signal; the bias resistor R b Is connected to the amplifying transistor M1The other end of the grid is connected with the output end of the transconductance generating circuit; the source electrode of the amplifying transistor M1 is grounded, and the drain electrode is connected with the drain electrode of the load transistor M2; the gate and source of the load transistor M2 are connected to the bias circuit.
The bias circuit comprises a transistor M b1 Transistor M b2 Transistor M b3 Transistor M b4 Wherein the transistor M b1 And a transistor M b4 Is connected to the transconductance generating circuit, the transistor M b4 Is grounded and has a drain connected to the transistor M b3 A source electrode of (a); the transistor M b1 Is grounded and has a drain connected to the transistor M b2 A source electrode of (a); the transistor M b1 And a transistor M b2 Has drains connected to the gate of the load transistor M2, and a transistor M b2 Are interconnected with the source.
The transconductance generating circuit comprises a positive temperature coefficient transconductance generating circuit and a negative temperature coefficient transconductance generating circuit, wherein when the negative temperature coefficient transconductance generating circuit is connected with the transistor M b4 A positive temperature coefficient transconductance generating circuit is connected with the transistor M b1 When the temperature coefficient amplifier circuit is used, the arbitrary gain temperature coefficient amplifier circuit generates positive temperature coefficient amplification output; when the PTC transconductance generating circuit is connected with the transistor M b1 A negative temperature coefficient transconductance generating circuit connected to the transistor M b4 And when the temperature coefficient amplifier circuit with any gain generates the negative temperature coefficient amplification output.
As shown in fig. 3, the signal amplifier part is composed of a signal coupling capacitor C C Bias resistor R b Transistor M for signal amplification 1 Load transistor M 2 Is composed of a bias circuit part consisting of M b1 、M b2 、M b3 、M b4 And (4) forming. Wherein M is 1 The bias voltage is generated by a positive temperature coefficient transconductance generating circuit, in which the amplifier circuit is M 1 M in the positive temperature coefficient transconductance generating circuit 2 Dimension ratio of k 1 (ii) a M in bias circuit b1 Bias voltage of (2) from positive temperatureA degree-coefficient transconductance generation circuit provides b1 Size and positive temperature coefficient transconductance generating circuit 2 Is also k 1 (ii) a M in bias circuit b4 Is provided by a negative temperature coefficient transconductance generating circuit, M b4 The size ratio of M2 in the PTC transconductance generating circuit is also k 2 . Furthermore M b2 And M b3 Having the same size, load transistors M 2 M in the negative temperature coefficient generation circuit 2 The size ratio is also k 2 . In the amplifying circuit shown in fig. 3, the amplifying transistor M 1 The current being derived from a bias voltage V b_pos Determining M in a PTC transconductance generating circuit 2 Current ratio of k 1 Then amplifying transistor M 1 M in transconductance generation circuit with positive temperature coefficient transconductance 2 K of transconductance 1 Doubling; negative carrier tube M 2 The current being derived from a bias voltage V b_neg Determining M in a negative temperature coefficient transconductance generating circuit 2 Current ratio of k 2 Then the carrier tube M is supported 2 Transconductance is M in a negative temperature coefficient transconductance generating circuit 2 K of transconductance 2 And (4) doubling. Therefore, when the arbitrary gain temperature coefficient amplifier circuit generates a positive temperature coefficient amplification output, the output gain is:
wherein,
is the size ratio of the transistor M1 to the transistor M8;
is a transistor M b4 In proportion to the size of the transistor M8,
is a first positive temperature coefficient current source I PTATn The magnitude of the current generated is such that,
is a second positive temperature coefficient current source I PTATp The magnitude of the current generated is such that,
is a first drain voltage resistor R 1n The resistance value of (1);
is the second drain voltage resistor R 1p Resistance value;
the current value of the second constant current source;
the current value of the first constant current source.
If I PTATp Has a temperature coefficient of TC p ，I PATAn Has a temperature coefficient of TC n The temperature coefficient of the amplifier gain is
Therefore, the temperature coefficient TC of the current can be adjusted by adjusting the positive temperature coefficient p 、TC n Constant bias current I 0p 、I 0n Coefficient of proportionality k 1 、k 2 The temperature coefficient of the amplifier is adjusted.
If V in FIG. 3 is exchanged b_pos And V b_neg The negative temperature coefficient gain can be obtained by the connection relation of (3), as shown in fig. 4, when the arbitrary gain temperature coefficient amplifier circuit generates the negative temperature coefficient amplified output, the output gain is:
wherein, in the process,
is the size ratio of the transistor M1 to the transistor M8;
is a transistor M b4 In proportion to the size of the transistor M8,
is a positive temperature coefficient current source I PTATn The magnitude of the current generated is such that,
is a second positive temperature coefficient current source I PTATp The magnitude of the current generated is such that,
is a first drain voltage resistor R 1n The resistance value of (1);
is the second drain voltage resistor R 1p Resistance value;
the current value of the second constant current source;
the current value of the first constant current source.
The temperature coefficient is negative, and the current temperature coefficient TC can be adjusted by adjusting the positive temperature coefficient p 、TC n Constant bias current I 0p 、I 0n Coefficient of proportionality k 1 、k 2 The temperature coefficient of the amplifier is adjusted.
The principle and the implementation mode of the invention are explained by applying specific embodiments in the invention, and the description of the embodiments is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (6)
1. An arbitrary gain temperature coefficient amplifier circuit, comprising a transconductance generating circuit, a signal amplifier circuit, and a bias circuit, wherein,
the bias circuit is used for providing bias voltage for the signal amplifier circuit, wherein the bias circuit comprises a transistor M b1 Transistor M b2 Transistor M b3 Transistor M b4 Wherein the transistor M b1 And a transistor M b4 Is connected to the transconductance generating circuit, the transistor M b4 Is grounded and has a drain connected to the transistor M b3 A source electrode of (a); the transistor M b1 Is grounded and has a drain connected to the transistor M b2 A source electrode of (a); the transistor M b1 And a transistor M b2 Is connected to the signal amplifier circuit, and a transistor M b2 The grid electrode and the source electrode are interconnected;
the transconductance generating circuit is respectively connected with the signal amplifier circuit and the bias circuit and is used for respectively providing bias voltage for the signal amplifier circuit and the bias circuit, wherein the transconductance generating circuit comprises a positive temperature coefficient transconductance generating circuit and a negative temperature coefficient transconductance generating circuit, and when the negative temperature coefficient transconductance generating circuit is connected with the transistor M b4 A positive temperature coefficient transconductance generating circuit is connected with the transistor M b1 When the temperature coefficient amplifier circuit is used, the arbitrary gain temperature coefficient amplifier circuit generates positive temperature coefficient amplification output; when the positive temperature coefficientA transconductance generating circuit connected with the transistor M b1 A negative temperature coefficient transconductance generating circuit connected to the transistor M b4 And when the temperature coefficient amplifier circuit with any gain generates the negative temperature coefficient amplification output.
2. The arbitrary gain temperature coefficient amplifier circuit according to claim 1, wherein the signal amplifier circuit comprises a coupling capacitor Cc and a bias resistor R b A signal amplifying transistor M1 and a load transistor M2, wherein one end of the coupling capacitor Cc is connected to the gate of the amplifying transistor M1, and the other end is connected to the input voltage signal; the bias resistor R b One end of the second resistor is connected with the grid electrode of the amplifying transistor M1, and the other end of the second resistor is connected with the output end of the transconductance generating circuit; the source electrode of the amplifying transistor M1 is grounded, and the drain electrode is connected with the drain electrode of the load transistor M2; the gate and source of the load transistor M2 are connected to the bias circuit.
3. The amplifier circuit of claim 1, wherein the negative temperature coefficient transconductance generating circuit comprises a transistor M3, a transistor M4, a transistor M5, a transistor M6, a first error amplifier EA1, and a first drain voltage resistor R 1n A first positive temperature coefficient current source I PTATn A first constant current source I 0n The gates and the drains of the transistor M4 and the transistor M5 are interconnected, and the sources of the transistors are connected with a system voltage VCC; the gates of the transistor M4 and the transistor M5 are connected to the output terminal of the first error amplifier EA 1; the source of the transistor M5 is connected to a comparison terminal of the first error amplifier EA1 and to ground via the transistor M3; the drain and the gate of the transistor M3 are interconnected, and the drain is connected with the source of the transistor M5; the source of transistor M3 is connected to ground; the source of the transistor M6 is connected to the other comparison terminal of the first error amplifier EA1 and to ground through the transistor M4; the source of the transistor M4 is grounded, the drain is connected with the source of the transistor M6, and the gate is the output V of the negative temperature coefficient transconductance generating circuit b_neg (ii) a The source electrode of the transistor M6 also passes through a drain voltage resistor R in turn 1n And a positive temperature coefficient current source I PTATn The series circuit of (1) is grounded; the source of the transistor M6 is also grounded through a first constant current source; the transistor M3 and the transistor M4 are the same size, and the transistors M5 and M6 are the same size.
4. The amplifier circuit as claimed in claim 3, wherein the PTC transconductance generating circuit includes a transistor M7, a transistor M8, a transistor M9, a transistor M10, a second error amplifier EA2, and a second drain voltage resistor R 1p A second constant current source I 0p A second PTC current source I PTATp The gates and the drains of the transistor M9 and the transistor M10 are interconnected, and the sources of the transistors are connected with a system voltage VCC; the gates of the transistor M9 and the transistor M10 are connected to the output terminal of the second error amplifier EA 2; the source of the transistor M9 is connected to a comparison terminal of the second error amplifier EA2 and to ground via the transistor M7; the drain and the gate of the transistor M7 are interconnected, and the drain is connected with the source of the transistor M9; the source of transistor M7 is connected to ground; the source of the transistor M10 is connected to the other comparison terminal of the second error amplifier EA2 and to ground through the transistor M8; the source of the transistor M8 is grounded, the drain is connected with the source of the transistor M10, and the gate is the output V of the negative temperature coefficient transconductance generating circuit b_pos (ii) a The source electrode of the transistor M10 also passes through a second drain voltage resistor R in turn 1p And a second constant current source I 0p The series circuit of (1) is grounded; the source of the transistor M10 is also connected with a second positive temperature coefficient current source I PTATp Grounding; the transistor M7 and the transistor M8 are the same size, and the transistor M9 and the transistor M10 are the same size.
5. The temperature-coefficient of arbitrary gain amplifier circuit of claim 4, wherein when the temperature-coefficient of arbitrary gain amplifier circuit produces a positive temperature coefficient amplified output, its output gain is:
wherein k is 1 Is the size ratio of the transistor M1 to the transistor M8; k is a radical of 2 Is a transistor M b4 To the size of the transistor M8, I PTATn As a positive temperature coefficient current source I PTATn Magnitude of the generated current I PTATp Is a second positive temperature coefficient current source I PTATp Magnitude of the generated current, R 1n Is a first drain voltage resistor R 1n The resistance value of (1); r 1p Is the second drain voltage resistor R 1p Resistance value; I.C. A 0p The current value of the positive temperature coefficient constant current source; i is 0n The current value of the negative temperature coefficient constant current source.
6. The temperature-coefficient of arbitrary gain amplifier circuit of claim 5, wherein when the temperature-coefficient of arbitrary gain amplifier circuit produces a negative temperature-coefficient amplified output, its output gain is:
wherein, k is 1 Is the size ratio of the transistor M1 to the transistor M8; k is a radical of 2 Is a transistor M b4 To the size of the transistor M8, I PTATn As a positive temperature coefficient current source I PTATn Magnitude of the generated current I PTATp Is a second positive temperature coefficient current source I PTATp Magnitude of the generated current, R 1n Is a first drain voltage resistor R 1n The resistance value of (1); r 1p Is the second drain voltage resistor R 1p Resistance value; i is 0p The current value of the positive temperature coefficient constant current source; i is 0n The current value of the negative temperature coefficient constant current source.
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| CA2150502A1 (en) * | 1994-08-05 | 1996-02-06 | Michael F. Mattes | Method and apparatus for measuring temperature |
| CN101043199A (en) * | 2006-03-24 | 2007-09-26 | 苏州中科半导体集成技术研发中心有限公司 | Voltage controlled oscillator with automatic amplitude control |
| CN101470458B (en) * | 2007-12-26 | 2010-10-27 | 中国科学院微电子研究所 | Band-gap reference voltage reference circuit |
| TWI470399B (en) * | 2012-12-20 | 2015-01-21 | Integrated Circuit Solution Inc | Low voltage bandgap reference circuit |
| CN103595402B (en) * | 2013-11-18 | 2017-05-24 | 四川和芯微电子股份有限公司 | High-accuracy oscillator |
| CN112332786B (en) * | 2020-10-30 | 2023-09-05 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Chip-level fully-integrated low-gain temperature drift radio frequency amplifier |
| CN113359932B (en) * | 2021-06-21 | 2021-12-17 | 东南大学 | Constant transconductance biasing circuit |
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2022
- 2022-05-20 CN CN202210546448.8A patent/CN114650019B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109116904A (en) * | 2018-09-25 | 2019-01-01 | 聚辰半导体(上海)有限公司 | A kind of biasing circuit |
| CN112039444A (en) * | 2020-11-04 | 2020-12-04 | 成都铱通科技有限公司 | Gain amplifier for improving variation range of positive temperature coefficient |
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| CN114650019A (en) | 2022-06-21 |
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