CN114123736B - Semiconductor circuit and application device thereof - Google Patents
Semiconductor circuit and application device thereof Download PDFInfo
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- CN114123736B CN114123736B CN202111281057.XA CN202111281057A CN114123736B CN 114123736 B CN114123736 B CN 114123736B CN 202111281057 A CN202111281057 A CN 202111281057A CN 114123736 B CN114123736 B CN 114123736B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a semiconductor circuit and an application device thereof, wherein the semiconductor circuit comprises a heat dissipation substrate and a plastic package shell wrapping the heat dissipation substrate, a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat dissipation substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit. According to the technical scheme, the design difficulty and cost of the main control board of the single-phase direct current converter are reduced, the anti-interference capability is improved, and the single-phase direct current converter works more stably and reliably; and only two half-bridges are adopted, so that the cost is lower, the two half-bridges are fully utilized when in use, unused half-bridges are not existed, and the resource waste is avoided.
Description
Technical Field
The present invention relates to the field of power semiconductors, and more particularly, to a semiconductor circuit and an application apparatus thereof.
Background
The semiconductor circuit is a power driving product combining power electronics and integrated circuit technology, in the manufacturing process, a heat dissipation substrate assembled with all components (including chips and resistance-capacitance parts) and pins is placed in a die cavity, and the product is finally formed into a product by injection molding, high-temperature curing and molding, so that an Intelligent Power Module (IPM) is one type of semiconductor circuit.
At present, the single-phase direct current converting machine mainly adopts a circuit scheme that an H bridge and a driving circuit thereof are formed by single power tube devices because the space arranged by a power control part is smaller, the whole circuit design is complex, the whole area of a PCB is large, the design difficulty is high, the cost is high, and the normal operation is also easily affected by interference. The main control board adopts the existing intelligent power module to drive the single-phase direct current power conversion machine, although the whole area of a PCB of the main control board can be reduced, as the intelligent power module is usually used for driving three-phase direct current motor equipment, three-phase full-bridge power modules are adopted inside, when the single-phase direct current power conversion machine works, one half bridge in the three-phase full-bridge power modules cannot be utilized, resource waste is caused, and the cost is high.
Disclosure of Invention
The invention mainly aims to provide a semiconductor circuit which aims to simplify the design of a peripheral circuit of a single-phase direct current converter, reduce the area of a PCB and reduce the overall cost.
In order to achieve the above purpose, the semiconductor circuit provided by the invention comprises a heat dissipation substrate and a plastic package shell coating the heat dissipation substrate, wherein a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat dissipation substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit.
Preferably, the high-voltage power integrated circuit further comprises a first bootstrap capacitor and a second bootstrap capacitor which are arranged on the heat dissipation substrate, a bootstrap module is arranged in the high-voltage power integrated circuit, the bootstrap module comprises two charging ends, the high-voltage power integrated circuit is provided with a first high-side floating power supply end, a second high-side floating power supply end, a first high-side floating power supply ground end and a second high-side floating power supply ground end, one charging end is electrically connected with the first high-side floating power supply end, and the other charging end is electrically connected with the second high-side floating power supply end;
the first high-side floating power supply end is electrically connected with the first phase output end of the H-bridge inverter circuit and the first high-side floating power supply ground end through the first bootstrap capacitor, and the second high-side floating power supply end is electrically connected with the second phase output end of the H-bridge inverter circuit and the second high-side floating power supply end through the second bootstrap capacitor.
Preferably, a control signal module is further disposed in the high-voltage power integrated circuit, the bootstrap module includes two switch units, the input ends of the two switch units are all electrically connected with the power supply end of the high-voltage power integrated circuit, the output end of one switch unit is one charging end, the output end of the other switch unit is the other charging end, and the control signal module is electrically connected with the on-off control ends of the two switch units.
Preferably, the switching unit comprises a switching tube, a first conduction end of the switching tube is an input end of the switching unit, a second conduction end of the switching tube is an output end of the switching unit, and a triggering end of the switching tube is an on-off control end of the switching unit.
Preferably, the bootstrap module further includes a voltage boosting unit, a power supply end of the high-voltage power integrated circuit is electrically connected with an input end of the switching unit through the voltage boosting unit, the power supply end is electrically connected with a voltage input end of the voltage boosting unit, and a voltage output end of the voltage boosting unit is electrically connected with an input end of the switching unit.
Preferably, the control signal module is further electrically connected with the boost unit, and detects the voltage of the voltage output end of the boost unit; and during the precharge period after the high-voltage power integrated circuit is electrified, the control signal module controls the two switch units to be conducted when detecting that the voltage of the voltage output end of the boosting unit reaches a preset voltage value.
Preferably, the control signal module is further electrically connected to the two low-voltage driving signal output ends, and when detecting that the voltage of the voltage output end of the boost unit reaches a preset voltage value during the precharge period, the control signal module outputs a conducting signal to the two low-voltage driving signal output ends, and after the precharge period, the control signal module outputs opposite pulse driving signals to the two low-voltage driving signal output ends.
Preferably, a delay/enable module is further arranged in the high-voltage power integrated circuit, the delay/enable module is provided with an enable control end connected with an enable pin of the high-voltage power integrated circuit, and the delay/enable module is electrically connected with the boost unit; and during the precharge period, the delay/enable module controls the enable control terminal to output a protection signal, and after the delay/enable module delays for a preset period of time, the signal of the enable control terminal is closed.
Preferably, all the strong current pins of the semiconductor circuit are arranged on one side of the heat dissipation substrate, and all the weak current pins are arranged on the other side of the heat dissipation substrate.
The invention also provides an application device of the semiconductor circuit, which comprises an MCU and a semiconductor circuit, wherein the semiconductor circuit comprises a heat dissipation substrate and a plastic package shell for coating the heat dissipation substrate, a plurality of signal pins distributed on two opposite sides of the heat dissipation substrate are welded on the heat dissipation substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat dissipation substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit; the MCU is electrically connected with the high-voltage power integrated circuit.
According to the semiconductor circuit, the high-voltage power integrated circuit and the four-channel driving H-bridge inverter circuit are arranged on the heat dissipation substrate and are encapsulated and coated by the plastic package shell, so that a single-phase full-bridge integrated power module is formed, the whole size is small, and the anti-interference capability is high; when the anti-interference device is applied to a main control board of the single-phase direct current converter, the occupied area is small, the whole area of the main control board is reduced, the design difficulty and cost of the main control board are reduced, the anti-interference capability is improved, and the single-phase direct current converter works more stably and reliably; compared with the intelligent power module of which the main control board adopts a three-phase full bridge, the semiconductor circuit of the invention adopts only two half bridges, has lower cost, fully utilizes the two half bridges when in use, does not have unused half bridges and avoids resource waste.
Drawings
FIG. 1 is a circuit diagram of a semiconductor circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating a partial module connection of a high voltage power integrated circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a partial module connection of a high voltage power integrated circuit according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a partial module connection of a high voltage power integrated circuit according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The semiconductor circuit is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like and performs sealing and encapsulation on the appearance, and is widely applied to the power electronics field, such as the fields of frequency converters of driving motors, various inversion voltages, variable-frequency speed regulation, metallurgical machinery, electric traction, variable-frequency household appliances and the like. The semiconductor circuits herein have a variety of other names such as modular smart power systems (Modular Intelligent Power System, MIPS), smart power modules (Intelligent Power Module, IPM), or names known as hybrid integrated circuits, power semiconductor modules, power modules, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
The embodiment of the invention provides MIPS.
Referring to fig. 1, fig. 1 is a circuit diagram of the MIPS in an embodiment of the invention.
In this embodiment, the MIPS includes a heat-dissipating substrate and a plastic package housing covering the heat-dissipating substrate, and a plurality of signal pins including a strong current pin and a weak current pin are soldered on the heat-dissipating substrate, which are distributed on opposite sides of the heat-dissipating substrate. The heat dissipation substrate is made of a metal material, and can be a rectangular plate made of aluminum or other metal materials with good heat dissipation performance; the heat-dissipating substrate has thereon a circuit wiring layer including an insulating layer and conductive layer traces (e.g., copper traces) formed on the insulating layer; the plastic package shell is a shell for coating each heat dissipation substrate, and is formed by injection molding and high-temperature curing, and the plastic package shell can be made of a mixture of epoxy resin, phenolic resin, filling materials (silicon dioxide or other solid powder) and other materials such as a release agent, a coloring agent, a flame retardant and the like; and circuit pins welded on each heat-dissipating substrate extend out of the side wall of the plastic package shell.
The high-voltage power integrated circuit 10 and the H-bridge inverter circuit 20 are arranged on the heat dissipation substrate, and the high-voltage power integrated circuit 10 and the H-bridge inverter circuit 20 are arranged on a conductive layer wiring of a circuit wiring layer of the heat dissipation substrate. The high-voltage power integrated circuit 10 has two high-voltage driving signal output ends (HO 1 and HO 2) and two low-voltage driving signal output ends (LO 1 and LO 2), where the two high-voltage driving signal output ends are correspondingly and electrically connected to power tubes of two upper bridge arms of the H-bridge inverter circuit 20 to drive and control on/off of the power tubes of the two upper bridge arms of the H-bridge inverter circuit 20, and the two low-voltage driving signal output ends are respectively and electrically connected to power tubes of two lower bridge arms of the H-bridge inverter circuit 20 to drive and control on/off of the power tubes of the two lower bridge arms of the H-bridge inverter circuit 20.
The MIPS of the embodiment sets the high-voltage power integrated circuit 10 and the four-channel driving H-bridge inverter circuit 20 on the heat dissipation substrate, and forms a single-phase full-bridge integrated power module through plastic package cladding of the plastic package shell, so that the overall size is small and the anti-interference capability is strong; when the anti-interference device is applied to a main control board of the single-phase direct current converter, the occupied area is small, the whole area of the main control board is reduced, the design difficulty and cost of the main control board are reduced, the anti-interference capability is improved, and the single-phase direct current converter works more stably and reliably; compared with the intelligent power module of which the main control board adopts a three-phase full bridge, the MIPS of the embodiment only adopts two half bridges, the cost is lower, the two half bridges are fully utilized when in use, the unused half bridges are not existed, and the resource waste is avoided.
Referring to fig. 1, in this embodiment, the MIPS further includes a first bootstrap capacitor C1 and a second bootstrap capacitor C2 disposed on the heat dissipating substrate, a bootstrap module 11 is disposed in the high-voltage power integrated circuit 10, the bootstrap module 11 includes two charging terminals, the high-voltage power integrated circuit 10 has a first high-side floating power supply terminal VB1, a second high-side floating power supply terminal VB2, a first high-side floating power supply ground terminal VS1 and a second high-side floating power supply ground terminal VS2, one charging terminal is electrically connected to the first high-side floating power supply terminal VB1, and the other charging terminal is electrically connected to the second high-side floating power supply terminal VB2; the first high-side floating power supply terminal VB1 is electrically connected to the first phase output terminal of the H-bridge inverter circuit 20 and the first high-side floating power supply ground terminal VS1 through the first bootstrap capacitor C1, and the second high-side floating power supply terminal VB2 is electrically connected to the second phase output terminal of the H-bridge inverter circuit 20 and the second high-side floating power supply terminal VB2 through the second bootstrap capacitor C2. The bootstrap module 11 charges the first bootstrap capacitor C1 and the second bootstrap capacitor C2, so that the driving output voltage of the MIPS is increased, and the load capacity of the MIPS is increased.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a partial module connection of a high voltage power integrated circuit 10 according to an embodiment of the present invention.
In this embodiment, a control signal module 12 is further disposed in the high-voltage power integrated circuit 10, the bootstrap module 11 includes two switch units 111, the input ends of the two switch units 111 are all electrically connected to the power supply end VDD of the high-voltage power integrated circuit 10, the output end of one switch unit 111 is a charging end, the output end of the other switch unit 111 is another charging end, and the control signal module 12 is electrically connected to the on-off control ends of the two switch units 111. In the MIPS of this embodiment, the control signal module 12 controls the on/off of the switch unit 111 by controlling the signal output to the on/off control end of the switch unit 111, so as to control the switching between the charging state and the off-charging state of the first bootstrap capacitor C1 and the second bootstrap capacitor C2, respectively.
Further, the switching unit 111 includes a switching tube Q, a first conducting end of the switching tube Q is an input end of the switching unit 111, a second conducting end of the switching tube Q is an output end of the switching unit 111, and a trigger end of the switching tube Q is an on-off control end of the switching unit 111. When the control signal module 12 outputs a first level signal to the trigger end of the switching tube Q, the switching tube Q is turned on, and when the control signal module 12 outputs a second level signal (opposite to the first level signal) to the trigger end of the switching tube Q, the switching tube Q is turned off. In the embodiment, the switching tube Q is preferably an LDMOS tube which can resist high voltage, so that the stability is better; of course, in other embodiments, the switch Q may be other types of MOS transistors or switch transistors (e.g., transistors).
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a partial module connection of the high voltage power integrated circuit 10 according to an embodiment of the present invention.
In this embodiment, the bootstrap module 11 further includes a voltage boosting unit 112, where a power supply terminal VDD of the high-voltage power integrated circuit 10 is electrically connected to an input terminal of the switching unit 111 through the voltage boosting unit 112, the power supply terminal VDD is electrically connected to a voltage input terminal of the voltage boosting unit 112, and a voltage output terminal of the voltage boosting unit 112 is electrically connected to an input terminal of the switching unit 111. After the voltage of the power supply end VDD is boosted by the boost unit 112, the first bootstrap capacitor C1 and the second bootstrap capacitor C2 are charged, so that the problem that the bootstrap charging voltage of the bootstrap module 11 is lower due to the conduction voltage drop of the low-side power tube of the H-bridge inverter circuit 20 and the voltage division generated by the conduction high resistance value of the switching tube Q of the bootstrap module 11 during the precharge period (the conduction of the low-side power tube and the non-conduction of the high-side power tube) after the high-voltage power integrated circuit 10 is electrified is avoided. Wherein, the precharge period refers to: the high voltage power integrated circuit 10 is charged for a period of time between the first bootstrap capacitor C1 and the second bootstrap capacitor C2 to a preset desired value from the moment of power-on.
Further, in the present embodiment, the control signal module 12 is further electrically connected to the voltage boosting unit 112 to detect the voltage of the voltage output end of the voltage boosting unit 112; the control signal module 12 is also electrically connected to the two low-voltage driving signal output terminals respectively. During the precharge period after the high voltage power integrated circuit 10 is powered on, the control signal module 12 controls the two switch units 111 to be turned on and outputs a turn-on signal to the two low voltage driving signal output ends when detecting that the voltage of the voltage output end of the boost unit 112 reaches a preset voltage value; the problem that the boost unit 112 charges the first bootstrap capacitor C1 and the second bootstrap capacitor C2 without boosting to the preset voltage value, resulting in too low bootstrap voltage and abnormal operation is avoided.
Further, after the precharge period, the control signal module 12 outputs opposite pulse driving signals to the two low voltage driving signal output terminals, so as to alternately charge the first bootstrap capacitor C1 and the second bootstrap capacitor C2, and alternately turn on the two half-bridges of the H-bridge inverter circuit 20.
Referring to fig. 4, fig. 4 is a schematic diagram illustrating a partial module connection of the high voltage power integrated circuit 10 according to an embodiment of the present invention.
In this embodiment, a delay/enable module 13 is further disposed in the high-voltage power integrated circuit 10, the delay/enable module 13 has an enable control terminal EN connected to an enable pin of the high-voltage power integrated circuit 10, and the delay/enable module 13 is electrically connected to the boost unit 112. During the precharge period, the delay/enable module 13 controls the enable control terminal EN thereof to output the protection signal, and after the delay/enable module 13 delays for a preset period of time, the signal of the enable control terminal EN thereof is turned off. The protection signal is a level signal, and the protection signal has the function of enabling the external MCU to detect the protection signal fed back by the enabling pin of the high-voltage power integrated circuit 10, controlling the high-voltage power integrated circuit 10 to shield the input signal, avoiding driving during the period, avoiding working under the under-voltage state and ensuring the reliable driving work. During the precharge period, the delay/enable module 13 starts to delay when detecting that the voltage of the voltage output terminal of the boost unit 112 reaches the preset voltage value, after the preset time of delay, the first bootstrap capacitor C1 and the second bootstrap capacitor C2 are already charged to the preset expected value, the delay/enable module 13 closes the signal of the enable control terminal EN thereof, the external MCU detects that the signal fed back by the enable pin of the high-voltage power integrated circuit 10 disappears, controls the high-voltage power integrated circuit 10 to receive the input signal, and starts the normal driving operation.
In some embodiments, all the high current pins of the MIPS are arranged on one side of the heat sink substrate and all the low current pins are arranged on the other side of the heat sink substrate. Namely, the strong current pins and the weak point pins of the MIPS are respectively distributed on two opposite sides of the heat dissipation substrate, so that signal interference of the strong current pins to the weak point pins is effectively avoided, and MIPS works more stably and reliably.
The invention also provides an application device of the MIPS, such as a single-phase electric transfer machine driving main control board, a frequency conversion electric appliance main control board, or a frequency conversion electric appliance product. The application device of the MIPS comprises an MCU and the MIPS, and the specific structure of the MIPS can refer to the embodiment. The MCU is electrically connected with the high-voltage power integrated circuit. The MIPS application apparatus of the present invention adopts all the technical solutions of all the above embodiments, so at least has all the beneficial effects brought by the technical solutions of the above embodiments, and will not be described in detail herein.
The above description of the preferred embodiments of the present invention should not be taken as limiting the scope of the invention, but rather should be understood to cover all modifications, variations and adaptations of the present invention using its general principles and the following detailed description and the accompanying drawings, or the direct/indirect application of the present invention to other relevant arts and technologies.
Claims (4)
1. The semiconductor circuit is characterized by comprising a heat-dissipating substrate and a plastic package shell wrapping the heat-dissipating substrate, wherein a plurality of signal pins distributed on two opposite sides of the heat-dissipating substrate are welded on the heat-dissipating substrate, a high-voltage power integrated circuit and an H-bridge inverter circuit are arranged on the heat-dissipating substrate, the high-voltage power integrated circuit is provided with two high-voltage driving signal output ends and two low-voltage driving signal output ends, the two high-voltage driving signal output ends are correspondingly and electrically connected with power tubes of two upper bridge arms of the H-bridge inverter circuit, and the two low-voltage driving signal output ends are respectively and electrically connected with power tubes of two lower bridge arms of the H-bridge inverter circuit;
the semiconductor circuit further comprises a first bootstrap capacitor and a second bootstrap capacitor which are arranged on the radiating substrate, a bootstrap module is arranged in the high-voltage power integrated circuit, the bootstrap module comprises two charging ends, the high-voltage power integrated circuit is provided with a first high-side floating power supply end, a second high-side floating power supply end, a first high-side floating power supply ground end and a second high-side floating power supply ground end, one charging end is electrically connected with the first high-side floating power supply end, and the other charging end is electrically connected with the second high-side floating power supply end;
the first high-side floating power supply end is electrically connected with the first phase output end of the H-bridge inverter circuit and the first high-side floating power supply ground end through the first bootstrap capacitor, and the second high-side floating power supply end is electrically connected with the second phase output end of the H-bridge inverter circuit and the second high-side floating power supply end through the second bootstrap capacitor;
the bootstrap module comprises two switch units, the input ends of the two switch units are electrically connected with the power supply end of the high-voltage power integrated circuit, the output end of one switch unit is one charging end, the output end of the other switch unit is the other charging end, and the control signal module is electrically connected with the on-off control ends of the two switch units;
the bootstrap module further comprises a boost unit, wherein a power supply end of the high-voltage power integrated circuit is electrically connected with an input end of the switch unit through the boost unit, the power supply end is electrically connected with a voltage input end of the boost unit, and a voltage output end of the boost unit is electrically connected with an input end of the switch unit; the control signal module is also electrically connected with the boosting unit and used for detecting the voltage of the voltage output end of the boosting unit; during the precharge period after the high-voltage power integrated circuit is electrified, the control signal module controls the two switch units to be conducted when detecting that the voltage of the voltage output end of the boosting unit reaches a preset voltage value;
the control signal module is also electrically connected with the two low-voltage driving signal output ends respectively, and outputs a conducting signal to the two low-voltage driving signal output ends when detecting that the voltage of the voltage output end of the boosting unit reaches a preset voltage value in the precharge period, and outputs opposite pulse driving signals to the two low-voltage driving signal output ends after the precharge period;
the high-voltage power integrated circuit is internally provided with a delay/enable module which is provided with an enable control end connected with an enable pin of the high-voltage power integrated circuit, and the delay/enable module is electrically connected with the boosting unit; and during the precharge period, the delay/enable module controls the enable control terminal to output a protection signal, and after the delay/enable module delays for a preset period of time, the signal of the enable control terminal is closed.
2. The semiconductor circuit according to claim 1, wherein the switching unit includes a switching tube, a first conducting end of the switching tube is an input end of the switching unit, a second conducting end of the switching tube is an output end of the switching unit, and a triggering end of the switching tube is an on-off control end of the switching unit.
3. The semiconductor circuit of claim 2, wherein all of the high current pins of the semiconductor circuit are arranged on one side of the heat sink substrate and all of the low current pins are arranged on the other side of the heat sink substrate.
4. A semiconductor circuit application device comprising an MCU and the semiconductor circuit of any one of claims 1 to 3, the MCU being electrically connected to the high voltage power integrated circuit.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203368422U (en) * | 2013-06-26 | 2013-12-25 | 深圳市朗驰欣创科技有限公司 | Chip enabling signal delay control circuit |
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
| CN105827101A (en) * | 2016-05-06 | 2016-08-03 | 成都芯源系统有限公司 | Voltage conversion integrated circuit, bootstrap circuit, and switch driving method |
| CN107147083A (en) * | 2017-06-30 | 2017-09-08 | 广东美的制冷设备有限公司 | SPM and variable frequency drives |
| CN110165872A (en) * | 2019-05-29 | 2019-08-23 | 成都芯源系统有限公司 | Switch control circuit and control method thereof |
| CN111884536A (en) * | 2020-08-06 | 2020-11-03 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN111969879A (en) * | 2020-07-31 | 2020-11-20 | 广东汇芯半导体有限公司 | Intelligent power module of integrated switching power supply |
| EP3767315A1 (en) * | 2019-07-16 | 2021-01-20 | Infineon Technologies Austria AG | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
| CN112600408A (en) * | 2020-12-02 | 2021-04-02 | 矽力杰半导体技术(杭州)有限公司 | Switch capacitor converter and driving circuit thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007221890A (en) * | 2006-02-15 | 2007-08-30 | Renesas Technology Corp | Semiconductor integrated circuit |
-
2021
- 2021-10-29 CN CN202111281057.XA patent/CN114123736B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
| CN203368422U (en) * | 2013-06-26 | 2013-12-25 | 深圳市朗驰欣创科技有限公司 | Chip enabling signal delay control circuit |
| CN105827101A (en) * | 2016-05-06 | 2016-08-03 | 成都芯源系统有限公司 | Voltage conversion integrated circuit, bootstrap circuit, and switch driving method |
| CN107147083A (en) * | 2017-06-30 | 2017-09-08 | 广东美的制冷设备有限公司 | SPM and variable frequency drives |
| CN110165872A (en) * | 2019-05-29 | 2019-08-23 | 成都芯源系统有限公司 | Switch control circuit and control method thereof |
| EP3767315A1 (en) * | 2019-07-16 | 2021-01-20 | Infineon Technologies Austria AG | Short circuit detection and protection for a gate driver circuit and methods of detecting the same using logic analysis |
| CN111969879A (en) * | 2020-07-31 | 2020-11-20 | 广东汇芯半导体有限公司 | Intelligent power module of integrated switching power supply |
| CN111884536A (en) * | 2020-08-06 | 2020-11-03 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN112600408A (en) * | 2020-12-02 | 2021-04-02 | 矽力杰半导体技术(杭州)有限公司 | Switch capacitor converter and driving circuit thereof |
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