CN114068292A - Ion trap system and ion trapping method - Google Patents
Ion trap system and ion trapping method Download PDFInfo
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- 238000005040 ion trap Methods 0.000 title claims abstract description 106
- 238000001926 trapping method Methods 0.000 title claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 522
- 238000012546 transfer Methods 0.000 claims abstract description 101
- 230000005684 electric field Effects 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 28
- 230000009467 reduction Effects 0.000 claims description 6
- 239000002245 particle Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 14
- 238000002679 ablation Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 238000000608 laser ablation Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000007769 metal material Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000010584 magnetic trap Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011575 calcium Substances 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000960 laser cooling Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000004812 paul trap Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004150 penning trap Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/16—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission
- H01J49/161—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission using photoionisation, e.g. by laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/34—Dynamic spectrometers
- H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
- H01J49/426—Methods for controlling ions
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Abstract
An ion trap system and an ion trapping method are provided, and the ion trap system is used for solving the problem that redundant atoms are easy to deposit in an ion trapping module in the prior art, so that an electrode in the ion trap system is polluted. In the present application, an ion trap system may include: the ion generating module is used for generating ions and emitting the ions to the ion transferring module; the ion transfer module is used for changing the movement direction of the received ions and transferring the ions to the ion trapping module; the ion trapping module is used for trapping the ions transferred by the ion transfer module. After the movement direction of the ions is changed through the ion transfer module, the ions are transferred to the ion trapping module, so that the ions are directly sprayed to the ion trapping module by the avoided ion generation module, and redundant ions are deposited to the ion trapping module.
Description
Technical Field
The application relates to the technical field of quantum computing, in particular to an ion trap system and an ion trapping method.
Background
With the development of information technology, quantum computing is receiving more and more attention. Quantum computing is peculiar in that the superposition properties of the quantum states make large-scale "parallel" computing possible. This is because the basic principle of quantum computing is to encode information using qubits (i.e., ions), where the states of a single qubit not only have two classical states, 0 and 1, but also have a superposition of 0 and 1, and n qubits can be simultaneously in 2nQuantum ofThe superposition of states. Each quantum algorithm carries out different quantum operations on different quantum bits, the greater the number of the quantum bits is, the stronger the parallel acceleration capability is, and the faster the solving speed is for the same problem.
The construction of qubits is realizable by a variety of physical architectures. Such as ion trap systems, superconducting circuits, nitrogen-vacancy centers (NV), semiconductor quantum dots, topological quantum computing, and the like. The ion trap has very large development potential due to the advantages of relatively long bit coherence time, good fidelity, potential expandability and the like. The ion trap system utilizes the internal energy level of ions as natural quantum bits (qubits), has the advantages of small interaction with the environment, long coherence time and high operation and readout fidelity, and is one of the more promising systems for future scalable quantum computing. The formation of ion trap systems can be broadly divided into: loading (load) ions, laser cooling, state operation and state readout, wherein the loading of ions is an important process for forming the ion trap system.
Currently, common methods for loading ions include resistive heating (resistive heating) and laser ablation (laser ablation). Wherein, the process of loading ions by resistance heating mainly comprises the following steps: passing a large current through an atomic furnace (oven) filled with required metal element simple substances or compounds, continuously heating for about 5-10 minutes, heating to a temperature of more than several hundred ℃ (for example, 650K for Ca), ejecting atoms to a central area of an ion trap potential field from a narrow caliber of the atomic furnace, forming a large number of atoms into an atom beam, and ejecting the atom beam to the central area of the ion trap potential field. When the atomic beam moves to the central area of the potential field of the ion trap, ionized light (generally comprising two wavelengths) focused in the central area is photoionized to form ions, so that the ions can be trapped under the action of the potential field, and after the operation of laser cooling, the ions can be stably trapped in the ion trap. The operation of loading ions by resistance heating is relatively simple, but because the heating needs to be continued for a long time, the temperature of the atomic furnace region is high, and when the high-temperature atomic beam is sprayed to the central region of the ion trap potential field, relatively large heat load may be introduced, thereby affecting the refrigeration effect of the ion trap system. The process of loading ions by laser ablation mainly comprises the following steps: the high-intensity laser is focused on the metal surface, the temperature of a local area of the metal surface is increased along with the deposition of the laser energy, even the metal surface is melted and vaporized, and a large number of metal particles (including ions, atoms and the like) are emitted from the metal surface to form a particle beam. When the laser ablation is used for loading ions, the outlet direction of the atomic furnace is required to be directed to the central area of the ion trap, and therefore, pulse ablation light is required to penetrate through the central area of the ion trap to be directed to the outlet direction of the atomic furnace. Thus, the pulsed ablative light may also ablate the electrode surfaces of the ion trap, thereby affecting the electrode surface structure.
Disclosure of Invention
The application provides an ion trap system and an ion trapping method, which are used for avoiding redundant atoms from being deposited on an ion trapping module as far as possible.
In a first aspect, the present application provides an ion trap system that may include an ion generation module, an ion transfer module, and an ion trapping module; the ion generating module is used for generating ions and emitting the ions to the ion transferring module; the ion transfer module is used for changing the movement direction of the received ions and transferring the ions to the ion trapping module; the ion trapping module is used for trapping the ions transferred by the ion transfer module.
Based on the scheme, the ion trap system can spatially separate the ion generation module and the ion trapping module through the ion transfer module, namely the ion generation module can not directly spray atoms to the ion trapping module, and the ion transfer module can change the movement direction of generated ions from the ion generation module so as to realize transfer to the ion trapping module, so that the avoided redundant ions are deposited to the ion trapping module.
In one possible implementation, the ion transfer module is specifically configured to change the direction of motion of the ions by an electric and/or magnetic field.
Through electric field and/or magnetic field, can accurate control ion's direction of motion to can accurate control ion get into the direction of ion trapping module.
In one possible implementation, the ion transfer module is further configured to stop transferring ions to the ion trapping module by turning off the electric and/or magnetic field.
By controlling the closing of the electric field and/or the magnetic field, the ion transfer module can be stopped from transferring ions to the ion trapping module. Also can understand as, when the ion imprisoned the number of the ion that the module imprisoned was imprisoned satisfied the demand, can close the electric field immediately to can no longer have the ion to get into the ion imprisoned module, can effectively control the ion quantity that gets into the ion imprisoned module, thereby can help further avoiding unnecessary ion to deposit in the imprisoned module.
In one possible implementation, the ion transfer module is further configured to select isotopes of ions by a magnetic field. That is, if the ion transfer module changes the direction of motion of the received ions via a magnetic field, the magnetic field may also be used to select isotopes of the ions.
By selecting isotopes of ions, the requirements of the ion trap system on elemental purity can be reduced, which in turn helps to reduce the cost of selecting materials.
In one possible implementation, the ion transfer module comprises a helmholtz coil or a permanent magnet; the ion transfer module is specifically configured to change a moving direction of the received ions through a magnetic field generated by the helmholtz coil or the permanent magnet, and adjust a direction of the ions leaving the ion transfer module to point to the first region of the ion trapping module.
In one possible implementation, the ion transfer module includes an electrode plate or a conductive tube; the ion transfer module is specifically configured to change a moving direction of the received ions through an electric field generated by the electrode plate or the conductive tube, and adjust a direction of the ions leaving the ion transfer module to point to the second region of the ion trapping module.
In one possible implementation, the ion transfer module is a first ion trap; the first ion trap is used for trapping the received ions; the ion transfer module is specifically configured to adjust a direction of ions leaving the ion transfer module to point to a third region of the ion trapping module by adjusting a magnitude of an electric field of the first ion trap.
In one possible implementation, the ion generation module includes a laser generation module and an atom generation module; the atom generation module is used for generating atoms and/or ions; the laser generation module is used for emitting first laser to the atoms generated by the atom generation module, and the first laser is used for ionizing the atoms into ions.
In one possible implementation, the ion trap system further includes a deceleration module, the deceleration module being located between the ion transfer module and the ion generation module; the speed reduction module is used for reducing the speed of the ions generated by the ion generation module and transmitting the reduced ions to the ion transfer module.
Through the speed reduction module, the speed of the ions from the ion generation module can be effectively reduced, so that the ion transfer efficiency of the ion transfer module is improved.
In a second aspect, the present application provides an ion trapping method, applicable to an ion trap system, comprising an ion trapping module; the method comprises the following steps: generating ions; changing the direction of movement of the ions to transfer the ions to the ion trapping module; and trapping the transferred ions by the ion trapping module.
In one possible implementation, the direction of motion of the ions can be changed by an electric and/or magnetic field.
In one possible implementation, the transfer of ions to the ion trapping module can also be stopped by switching off the electric and/or magnetic field.
Further, optionally, an isotope of the ion is selected by the magnetic field.
In one possible implementation, the direction of movement of the ions as they leave the magnetic field is adjusted to point towards the first region of the ion trapping module by means of a magnetic field generated by a helmholtz coil or a permanent magnet.
In a possible implementation manner, the moving direction of the ions when the ions leave the electric field is adjusted to point to the second region of the ion trapping module through the electric field generated by the electrode plate or the conductive tube.
In one possible implementation, the direction of movement of the ions as they exit the first ion trap is adjusted to point to the third region of the ion trapping module by adjusting the magnitude of the electric field of the first ion trap.
In one possible implementation, the ions may be slowed.
For technical effects that can be achieved by any one of the second aspect or the second aspect, reference may be made to the description of the advantageous effects in the first aspect, and details are not repeated here.
Drawings
Fig. 1 is a schematic structural diagram of an ion trap system provided herein;
FIG. 2a is a schematic diagram illustrating the operation of an atom generation module provided herein;
FIG. 2b is a schematic diagram of the operation of another atom generation module provided herein;
FIG. 3 is a schematic diagram of an ion trapping module provided in the present application as a chip trap;
fig. 4 is a schematic structural diagram of an ion trap provided herein;
figure 5 is a schematic diagram of another ion trap configuration provided herein;
fig. 6 is a schematic diagram of a further ion trap according to the present application;
fig. 7 is a schematic diagram of a further ion trap according to the present application;
fig. 8 is a schematic diagram of yet another ion trap provided herein;
FIG. 9 is a schematic flow chart of a method for ion trapping according to the present application.
Detailed Description
The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
Hereinafter, some terms in the present application will be explained. It should be noted that these explanations are for the convenience of those skilled in the art, and do not limit the scope of protection claimed in the present application.
1) Penning (Penning) ion trap
Penning ion traps (or Penning traps) are devices that can store charged particles, typically using a uniform axial magnetic field and a non-uniform quadrupole electric field to confine the ions. Specifically, the radial trajectory of the charged particles is constrained using an axially strong shimming field, and the axial trajectory of the charged particles is constrained using a quadrupole electric field. Electrostatic potential generated using a triplet of electrodes: one ring electrode and two end electrodes. In an ideal penning ion trap, the ring and end rotate to pull out an extended hyperboloid. In the case of trapping positive (negative) ions, the tip electrode is maintained at a positive (negative) potential with respect to the ring. This potential creates a "saddle point" in creating the potential well, thereby confining the ions to the center of the axis. The electric field causes the ions to oscillate continuously (ideally into simple harmonic motion) as they move about the axial center. The magnetic field used in conjunction with the electric field causes the charged particles to draw an epitrochoid in motion in a radial plane.
2) Paul ion trap
A Paul ion trap (or Paul trap) generally refers to a device that uses a potential well formed by quadrupole electric fields to store charged particles in a specific region within the trap. The inner surface of the Paul ion trap is composed of two hyperboloid electrodes (called cap electrodes or end electrodes) rotating around the Z-axis and a hyperboloid ring electrode (called ring electrode) with the XY-plane as the symmetric tangent plane, as shown in the first ion trap shown in fig. 7 below.
As background, common methods of loading ions in current ion trap systems include resistive heating and laser ablation. Resistance heating and laser ablation all need the export direction of atomic furnace to point to the region of imprisoned ion for the atomic beam that erupts from atomic furnace directly spouts to the ion imprisoned region, because the atomic number of spouting from atomic furnace is great, deposits the surface at the electrode that the ion imprisoned region includes very easily, can change the structure on electrode surface and introduce stray electric field, thereby reduces the fidelity of controlling the ion. In addition, in the resistance heating method, since long-time continuous heating is required, the temperature of the atomic furnace region is high, and relatively large heat may be introduced into the low-temperature ion trap system. For the laser ablation approach, it is required that the atomic furnace exit direction is directed to the central region of the ion trap, and therefore, it is required that the ablation laser passes through the central region of the electrode in the ion trap to be directed to the atomic furnace exit direction. Due to the high instantaneous energy of the ablation laser, ablation may also occur on the electrode surface of the ion trap, thereby affecting the electrode surface structure.
In view of the above, the present application proposes an ion trap system. The ion trap system can spatially separate the ion generation module and the ion trapping module through the ion transfer module, namely, ions generated by the ion generation module cannot be directly sprayed to the ion trapping module, but are transferred to the ion trapping module after the movement direction of the ions is changed through the ion transfer module, so that the redundant ions are prevented from being deposited on the ion trapping module.
The ion trap system proposed in the present application will be specifically explained with reference to fig. 1 to 8.
Based on the above, as shown in fig. 1, a schematic structural diagram of an ion trap system provided by the present application is shown. The ion trap system may include an ion generation module, an ion transfer module, and an ion trapping module. The ion generation module may be configured to generate ions and direct the ions toward the ion transfer module. The ion transfer module is used for changing the movement direction of the received ions so as to transfer the ions to the ion trapping module; illustratively, the direction of movement of ions exiting the ion transfer module is directed toward the ion trapping module. The ion trapping module is used for trapping the ions transferred by the ion transfer module.
Based on this ion trap system, accessible ion transfer module separates ion generation module and ion trapping module in space, and the ion generation module can not directly spray the atom to ion trapping module promptly, but changes the back through ion transfer module with the motion direction of the ion that produces from ion generation module to realize shifting to ion trapping module, thereby help the unnecessary ion deposition who avoids to ion trapping module.
The various functional components and structures shown in fig. 1 are described separately below to provide exemplary embodiments.
Ion generation module
The ion generation module may be referred to as an ion source, and may generate ions, a large number of which may form an ion beam stream.
In one possible implementation, the ion generation module may include an atom generation module that may generate atoms and/or ions (which may be collectively referred to as particles) through resistive heating or laser ablation, and a laser generation module for emitting a first laser to the atoms generated by the atom generation module, the first laser being used to ionize the atoms into ions. Generally, the laser generation module is used for generating two first lasers, and an atom absorbs energy of a photon from one of the first lasers, and after the atom transitions to an excited state, the atom absorbs energy of a photon from the other of the first lasers, so that the atom loses electrons on the outermost layer to form ions. It should be noted that the wavelengths of the two first lasers may be equal or may not be equal, which is not limited in this application. For example, the laser generation module may generate two beams of first laser light, where one beam of the first laser light has a wavelength of 399nm, and the other beam of the first laser light has a wavelength of 369nm, electrons in the outermost layer of atoms may be excited from a ground state to an excited state by the 399nm first laser light, and the electrons in the outermost layer of atoms in the excited state may be ionized by the 369nm first laser light to form ions.
As shown in fig. 2a, the atom generation module provided in this application is intended to work according to the principle. The atom generating module generates particles by a resistance heating mode. The atom generating module can comprise an atom furnace filled with metal materials, and after the metal materials in the atom furnace are heated to a certain temperature (such as hundreds of degrees), a large amount of original products are sprayed out of the atom furnace through the atom furnace filled with the metal materials. It is understood that resistive heating produces atoms.
Fig. 2b is a schematic diagram illustrating the operation principle of another atom generation module provided in the present application. The atom generating module generates atoms and/or ions by means of laser ablation. The atom generating module can comprise an atom furnace filled with metal materials, wherein an ablation laser is focused on the surface of the metal materials in the atom furnace, the temperature of the metal surface is increased along with the increase of the intensity of the ablation laser, even the metal surface is melted and vaporized, and a large amount of metal particles (including atoms and ions) escape from the metal surface to form a particle beam. By adjusting the intensity of the ablation laser, the ratio of atoms to ions in the generated particle beam can be changed. When the intensity of the ablation laser is weak, most atoms in the particle beam flow occupy; as the intensity of the ablation laser increases, the majority of the ions in the particle beam flow.
The ablation laser may be a pulsed laser or a continuous laser. In addition, typically the ablation laser is from a different laser than the first laser. This is because the instantaneous energy required by the ablation laser is relatively high and the first laser needs to be relatively frequency stable. The wavelength of the ablation laser may be equal to or different from the wavelength of the first laser, which is not limited in this application.
It should be understood that if the particle generated by the atom generating module includes atoms, the atoms need to be further ionized to obtain ions; if the particles generated by the atom generation module are ions, the ions can be directly injected into the ion transfer module. Illustratively, if the atom generation module is a nuclear reactor, a first laser may be directed at the bore of the nuclear reactor to ionize the atoms into ions.
In one possible implementation, the metallic material used for generating the particles may Be, for example, an element suitable for quantum computing, such as ytterbium (Yb), calcium (Ca), or beryllium (Be).
The ion generating module includes, but is not limited to, a metal material installed in the atomic furnace, and may be a metal block, a metal wire, or the like, which is not limited in the present application.
Second, ion trapping module
In one possible implementation, the ion trapping module can be used to trap ions transferred from the ion transfer module. In this application, the ion trap trapping module may be a quadrupole trap (four-rod trap), a blade trap (blade trap), or a chip trap (surface trap), which is not limited in this application.
As shown in fig. 3, a schematic structure diagram of an ion trapping module provided in the present application is a chip well. The ion trapping module may include a substrate and a Direct Current (DC) electrode and a Radio Frequency (RF) electrode disposed on the substrate. Ions can be trapped in the ion trapping region by the electric field created by the DC electrode and the RF electrode. The ions trapped by the ion trapping region can be arranged in a one-dimensional mode (namely, a one-dimensional ion chain) or in a two-dimensional plane. In two-dimensional planar arrangement, the ions have more freedom of transfer and a more stable structure.
It should be noted that the intervals between two adjacent ions in the one-dimensional ion arrangement or the two-dimensional ion arrangement may be equal or unequal. The specific arrangement and number of ions trapped in the ion trapping module are related to the quantum algorithm to be executed. In addition, the ions trapped in the ion trapping module need to be isolated from the external environment, so that collision of other particles to the trapped ions is prevented, and the trapped ions are lost.
Further, optionally, after ions are trapped in the trapping region of the ion trapping module, quantum manipulation may be performed on the ions in the ion trap system to complete quantum tasks, such as quantum computation, quantum simulation, quantum precision measurement, and the like.
Ion transfer module
In one possible implementation manner, the ion transfer module may change the movement direction of the ions through an electric field, or a magnetic field, or an electric field and an electric field, or a magnetic field and an electric field, so that the ions are transferred to the ion trapping module. That is, the moving direction of the ions entering the ion transfer module can be changed by any one of an electric field, a magnetic field, an electric field and an electric field, a magnetic field and an electric field, so as to transfer the ions generated from the ion generation module to the ion trapping module. For example, the direction of motion of ions entering the ion transfer module can be deflected at an angle to transfer the ions to the ion trapping module.
As follows, the ion transfer module will be described based on different cases, respectively.
Case 1, the ion transfer module changes the moving direction of ions by a magnetic field.
In one possible implementation, the direction of the received ions as they leave the ion transfer module (i.e., the magnetic field) can be adjusted by changing the direction of motion of the received ions via a magnetic field to point at the first region of the ion trapping module, see fig. 4. After the ions enter the magnetic field, the ions are influenced by the action of the Lorentz magnetic force in the magnetic field and can deflect, so that the moving direction of the ions is changed, and further, the direction of the ions leaving the magnetic field can be adjusted to point to the first area of the ion trapping module. Wherein the first region can be a central region of the ion trapping module, the central region being generally for trapping ions; the ion trapping module can also be any region which is at a certain distance from the central region of the ion trapping module, and the application does not limit the distance.
In conjunction with fig. 4, since the direction and speed of the ions generated by the ion generating module are within a range, the exit direction of the ions leaving the magnetic field can be directed to the first region of the ion trapping module by adjusting the magnitude of the magnetic field. Namely, the ion transfer module can select ions with proper speed to enter the ion trapping module. For example, if the magnetic field is a uniform magnetic field, ions with a suitable speed can be selected to enter the ion trapping module according to equation 1.
If the included angle between the direction of the ions leaving the ion transfer module and the central line of the first region of the ion trapping module is 0 degree, the ions can just enter the first region of the ion trapping module; when the ions leave the ion transfer module, the included angle between the direction of the ions and the center line of the first region of the ion trapping module is alpha which is larger than 0 degree, which indicates that the deflection angle of the ions is smaller, and the magnetic field intensity can be increased, so that the turning radius of the ions is reduced (namely, the deflection angle is increased), and the included angle between the direction of the ions leaving the ion transfer module and the center line of the first region of the ion trapping module is 0 degree as much as possible. When the included angle between the direction of the ions leaving the ion transfer module and the center line of the first region of the ion trapping module is beta smaller than 0 degree, the larger the deflection angle of the ions is, the magnetic field strength can be reduced, so that the turning radius of the ions is increased (i.e. the deflection angle is reduced), and the included angle between the direction of the ions leaving the ion transfer module and the center line of the first region of the ion trapping module is as 0 degree as possible.
Further, optionally, the charge-to-mass ratio due to different isotopes of the ion
Different, different isotopes of the same metal material exit from different directions of the magnetic field, so that if the ion transfer module is a magnetic field, the magnetic field can also be used for selecting isotopes of ions, thereby reducing the requirement of the ion trap system on element purity.
In one possible implementation, the ion transfer module includes a Helmholtz coil (Helmholtz coil) or permanent magnet or other magnetic element that can generate a magnetic field. It should be appreciated that the magnetic field generated by the Helmholtz coil or permanent magnet may be varied by varying the magnitude of the current input into the Helmholtz coil or permanent magnet.
The magnetic field may be a uniform magnetic field (i.e., a uniform magnetic field) or a time-varying magnetic field (i.e., an alternating magnetic field).
Based on the situation 1, whether the ion transfer module transfers ions to the ion trapping module can be controlled by controlling the on or off of the magnetic field. When the number of ions trapped by the ion trapping module meets the requirement, the magnetic field can be closed immediately, so that no ions enter the ion trapping module, the number of ions entering the ion trapping module can be effectively controlled, and the phenomenon that redundant ions are deposited on the ion trapping module can be avoided.
Case 2, the ion transfer module changes the moving direction of the particles by an electric field.
In one possible implementation, the direction of the received ions can be changed by the electric field, and the direction of the ions leaving the ion transfer module can be adjusted to point to the second region of the ion trapping module, see fig. 5. After the ions enter the electric field, the ions in the electric field are deflected under the action of the electric field force, so that the movement direction of the ions is changed, and the ions are injected into the second area of the ion trapping module.
It should be noted that the second region can be a central region of the ion trapping module, which is typically used to trap ions; the ion trapping module can also be any region which is at a certain distance from the central region of the ion trapping module, and the application does not limit the distance. The second region may be the same as or different from the first region.
In conjunction with fig. 5, since the direction and speed of the ions generated by the ion generating module are within a range, the direction of the ions leaving the ion transfer module can be directed to the second region of the ion trapping module by adjusting the magnitude of the electric field of the ion transfer module (taking the example of the uniform electric field of the ions).
In one possible implementation, the ion transfer module may include an electrode plate or conductive tube or other device that can generate an electric field. Further, optionally, electricity is applied to the electrode plate or the conductive tube, so that the electrode plate or the conductive tube generates an electric field.
The electric field may be a uniform electric field or an electric field that changes with time (i.e., an alternating electric field). It is understood that for a time varying electric field.
Based on the situation 2, the opening or closing of the electric field can be controlled, so that whether the ion transfer module transfers ions to the ion trapping module or not can be controlled. The number of ions imprisoned by the ion imprisoning module meets the requirement, and the electric field can be closed immediately, so that ions can not enter the ion imprisoning module, the number of ions entering the ion imprisoning module can be effectively controlled, and the ion imprisoning module can be helpful to avoid the deposition of redundant ions.
Case 3, the ion transfer module changes the moving direction of ions by magnetic and electric fields.
In one possible implementation, the ion transfer module may be a small ion trap formed by a magnetic field and an electric field, and is referred to as a first ion trap, wherein the first ion trap may be a Penning ion trap (see the above description of the Penning ion trap, and the description is not repeated here). Fig. 6 is a schematic structural diagram of an ion trap according to the present application. The first ion trap is used for trapping ions from the ion generation module, and the direction of the ions leaving the ion transfer module is adjusted to point to the third region of the ion trapping module by adjusting the magnitude of the electric field of the first ion trap. That is, after the first ion trap traps ions, the magnitude of the electric field forming the first ion trap can be varied such that the electric field urges the ions towards the ion trapping module, and the direction is towards the third region of the ion trapping module.
Based on the situation 3, the amount of ions transferred by the ion transfer module can be accurately controlled by controlling the on or off of the electric field and/or the magnetic field, so that the deposition of redundant ions on the ion trapping module can be avoided.
Case 4, the ion transfer module changes the movement direction of ions by electric field and electric field.
In a possible implementation manner, the ion transfer module may also be a small ion trap formed by an electric field and an electric field, and may also be referred to as a first ion trap, where the first ion trap is a Paul trap (see the related description of the Paul ion trap, and the description is not repeated here). Fig. 7 is a schematic diagram of a structure of another ion trap provided in the present application. The first ion trap is used for trapping ions from the ion generation module, and the direction of the ions leaving the ion transfer module is adjusted to point to the third region of the ion trapping module by adjusting the magnitude of the electric field of the first ion trap. Illustratively, after the first ion trap traps ions, the magnitude of the electric field generated by the ring electrodes forming the first ion trap may be varied such that the electric field urges the ions to be transferred towards the ion trapping module, and the direction is towards the third region of the ion trapping module.
It should be noted that the third region in cases 3 and 4 above can be the central region of the ion trapping module, and the central region is usually used for trapping ions; the ion trapping module can also be any region which is at a certain distance from the central region of the ion trapping module, and the application does not limit the distance. In addition, the third area, the second area and the first area may be the same or different, or any two of them are the same, which is not limited in this application.
Fourth, speed reduction module
The temperature of the ions ejected from the ion generating module is relatively high (e.g., several hundred K), the average velocity is about several hundred m/s, and in order to improve the efficiency of the ion transfer module in transferring ions, the ions generated by the ion generating module may be first decelerated and then emitted to the ion transfer module. That is, the ions from the ion generating module are first decelerated by the deceleration module (for example, to tens of m/s) and then emitted into the ion transfer module.
In one possible implementation, the deceleration module may achieve deceleration of the ions by evaporative cooling of the ions from the ion generation module. Generally, the temperature of the ions can be reduced from 10 μ K to 1 μ K, so that the phase space density of the ions can be increased by two to three orders of magnitude. Even the temperature of the ions can be reduced to the energy level of the phase change of the ions, so that the glass color-Einstein condensate (nK temperature level) is obtained, and the efficiency of the ion transfer module for transferring the ions is improved.
Further, the deceleration module may alternatively be a pure magnetic trap or a pure optical trap. Illustratively, if the deceleration module is a pure magnetic trap, the ions from the ion generation module are subjected to evaporative cooling by the pure magnetic trap to achieve temperature reduction of the ions. Wherein, pure magnetic trap can refer to and close the cooling laser back of magneto-optical trap, improves the magnetic field gradient of Helmholtz coil rapidly, forms the structure that only needs the magnetic field just can imprison ion. It should be understood that, in the process of evaporative cooling, ions with relatively high temperature in the ions are continuously removed, the remaining ions are elastically collided to achieve thermal equilibrium, ions with relatively high temperature are generated, and then the ions are removed, and the process is repeated, so that the effect of cooling the ions in the ions is achieved. The working principle of the magneto-optical trap is that three pairs of cooling lasers (namely 6 cooling lasers in total) with frequencies close to atomic energy level differences are added into a gradient magnetic trap generated by a pair of Helmholtz coils carrying reverse currents, the incidence directions of each pair are opposite, the three pairs of cooling lasers are oppositely emitted from three orthogonal directions (for example, the three directions of XYZ), and the intersection point is located in the center of the magnetic trap.
The pure optical trap is a structure for trapping ions by the optical trap formed by far infrared laser, and the trapping principle is that the difference between the frequency of the far infrared laser and the energy level of the ions is hundreds of terahertz magnitude, namely the frequency of the far infrared laser is far smaller than the energy level difference of the ions. After the far infrared laser irradiates the ions, the ions are attracted to the central position with the strongest light intensity under the action of the dipole force of the far infrared laser, so that the ion clusters are loaded in the far infrared laser, and the purpose of cooling the ions is achieved by continuously reducing the light intensity of the far infrared laser.
It should be noted that, in the process of quantum manipulation, if ions trapped in the ion trapping module are lost, the electric field and/or the magnetic field may be turned on again to trap the ions again through the ion trap system in any of the above embodiments.
Based on the above, a specific implementation of the ion trap system is given below with reference to a specific hardware structure. To facilitate a further understanding of the structure of the ion trap system described above.
Fig. 8 is a schematic structural diagram of another ion trap system provided in the present application. The ion trap system can comprise an ion generation module, a speed reduction module, an ion transfer module and an ion trapping module, wherein the ion generation module comprises a atomic furnace and a laser. For a detailed description of the ion generating module, the deceleration module, the ion transferring module and the ion trapping module, reference may be made to the related description, and the detailed description is not repeated here.
Based on the above and the same concept, fig. 9 schematically illustrates a method flow diagram of an ion trapping method provided in an embodiment of the present application. The method may be applied to the ion trap system in any of the embodiments described above, wherein the ion trap system may comprise a sub-trapping module. The method comprises the following steps:
at step 901, ions are generated.
The step 901 may be executed by the ion generation module in the ion trap system, which may be specifically described in the detailed description of the ion generation module, and is not described herein again.
At step 902, the direction of motion of the ions is changed to transfer the ions to the ion trapping module.
As follows, three possible implementations of changing the direction of motion of the ions are exemplarily shown.
In implementation mode 1, the magnetic field generated by the helmholtz coil or the permanent magnet is used to adjust the moving direction of the ions when the ions leave the magnetic field to point to the first region of the ion trapping module.
In implementation mode 2, the movement direction of the ions leaving the electric field is adjusted to point to the second region of the ion trapping module through the electric field generated by the electrode plate or the conductive tube.
In implementation 3, by adjusting the magnitude of the electric field of the first ion trap, the direction of the movement of the ions when the ions leave the first ion trap is adjusted to point to the third region of the ion trapping module.
This step 902 can be performed by the ion transfer module in the ion trap system, which can be specifically described in the above detailed description of the ion transfer module, and is not described herein again.
And step 903, trapping the transferred ions by an ion trapping module.
This step 903 can be performed by an ion trapping module in the ion trap system, which can be described in detail in the ion trapping module, and is not described herein again.
As can be seen from steps 901 to 903, by changing the moving direction of the ions, the ions are not directly ejected to the ion trapping module, thereby helping to prevent the excessive ions from depositing on the ion trapping module.
In the embodiments of the present application, unless otherwise specified or conflicting with respect to logic, the terms and/or descriptions in different embodiments have consistency and may be mutually cited, and technical features in different embodiments may be combined to form a new embodiment according to their inherent logic relationship.
In the present application, "0 degree, 90 degree" and the like do not mean absolute values, and any engineering errors may be allowed. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. In the description of the text of this application, the character "/" generally indicates that the former and latter associated objects are in an "or" relationship. Also, in the present application, the word "exemplary" is used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Or it may be appreciated that the use of the word exemplary is intended to present concepts in a concrete fashion, and is not intended to limit the scope of the present application.
It is to be understood that the various numerical designations referred to in this application are merely for ease of description and are not intended to limit the scope of the embodiments of the present application. The sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of the processes should be determined by their functions and inherent logic. The terms "first," "second," and the like, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. Furthermore, the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover a non-exclusive inclusion, such as a list of steps or elements. A method, system, article, or apparatus is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such process, system, article, or apparatus.
Although the present application has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations can be made thereto without departing from the spirit and scope of the application. Accordingly, the specification and figures are merely illustrative of the concepts defined by the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to encompass such modifications and variations.
Claims (17)
1. An ion trap system, comprising: the ion trapping device comprises an ion generating module, an ion transferring module and an ion trapping module;
the ion generation module is used for generating ions and emitting the ions to the ion transfer module;
the ion transfer module is used for changing the movement direction of the received ions and transferring the ions to the ion trapping module;
and the ion trapping module is used for trapping the ions transferred by the ion transfer module.
2. The ion trap system of claim 1, wherein the ion transfer module is specifically configured to:
the direction of motion of the ions is changed by an electric and/or magnetic field.
3. The ion trap system of claim 2, wherein the ion transfer module is further to:
stopping transferring the ions to the ion trapping module by turning off the electric field and/or the magnetic field.
4. The ion trap system of claim 2 or 3, wherein the ion transfer module is further configured to:
selecting an isotope of the ion by the magnetic field.
5. The ion trap system of any of claims 2 to 4, wherein the ion transfer module comprises a Helmholtz coil or a permanent magnet;
the ion transfer module is specifically configured to: changing the received movement direction of the ions through a magnetic field generated by the Helmholtz coil or the permanent magnet, and adjusting the direction of the ions when leaving the ion transfer module to point to the first region of the ion trapping module.
6. The ion trap system of claim 2 or 3, wherein the ion transfer module comprises an electrode plate or a conductive tube;
the ion transfer module is specifically configured to: and changing the received motion direction of the ions through an electric field generated by the electrode plate or the conductive tube, and adjusting the direction of the ions when the ions leave the ion transfer module to point to a second region of the ion trapping module.
7. The ion trap system of claim 2 or 3, wherein the ion transfer module is a first ion trap;
the first ion trap is used for trapping the received ions;
the ion transfer module is specifically configured to: and adjusting the direction of the ions leaving the ion transfer module to point to a third region of the ion trapping module by adjusting the electric field of the first ion trap.
8. The ion trap system of any of claims 1 to 7, wherein the ion generation module comprises a laser generation module and an atom generation module;
the atom generation module is used for generating atoms and/or ions;
the laser generation module is used for emitting first laser to the atoms generated by the atom generation module, and the first laser is used for ionizing the atoms into ions.
9. The ion trap system of any of claims 1 to 8, further comprising a deceleration module located between the ion transfer module and the ion generation module;
the speed reduction module is used for reducing the speed of the ions generated by the ion generation module and emitting the reduced ions to the ion transfer module.
10. The ion trapping method is characterized by being applied to an ion trap system, wherein the ion trap system comprises an ion trapping module; the method comprises the following steps:
generating ions;
changing the direction of movement of the ions to transfer the ions to the ion trapping module;
and trapping the transferred ions by the ion trapping module.
11. The method of claim 10, wherein said changing the direction of motion of the ions comprises:
the direction of motion of the ions is changed by an electric and/or magnetic field.
12. The method of claim 11, wherein the method further comprises:
stopping transferring the ions to the ion trapping module by turning off the electric field and/or the magnetic field.
13. The method of claim 11 or 12, wherein the method further comprises:
selecting an isotope of the ion by the magnetic field.
14. The method of any of claims 11 to 13, wherein said changing the direction of movement of said ions comprises:
and adjusting the movement direction of the ions when the ions leave the magnetic field to point to the first region of the ion trapping module through the magnetic field generated by a Helmholtz coil or a permanent magnet.
15. The method of claim 10 or 11, wherein said changing the direction of motion of said ions comprises:
and adjusting the movement direction of the ions when the ions leave the electric field to point to a second region of the ion trapping module through the electric field generated by the electrode plate or the conductive tube.
16. The method of claim 10 or 11, wherein said changing the direction of motion of said ions comprises:
and adjusting the electric field of the first ion trap to enable the direction of the movement of the ions when the ions leave the first ion trap to be directed to the third area of the ion trapping module.
17. The method of any of claims 10 to 16, further comprising:
and decelerating the ions.
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| PCT/CN2021/093869 WO2022022006A1 (en) | 2020-07-30 | 2021-05-14 | Ion trap system and ion capturing method |
| US18/159,859 US20230178355A1 (en) | 2020-07-30 | 2023-01-26 | Ion trap system and ion trapping method |
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| CN114706210A (en) * | 2022-04-06 | 2022-07-05 | 国仪量子(合肥)技术有限公司 | Ion loading system and method of ion loading |
| CN115201172A (en) * | 2022-07-29 | 2022-10-18 | 中国科学技术大学 | Atomic trap trace analysis system and method for measuring calcium-41 isotope abundance |
| CN116047114A (en) * | 2023-01-05 | 2023-05-02 | 北京量子信息科学研究院 | Measuring method and measuring device for surface ion trap trapping electric field distribution |
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| CN115545209B (en) * | 2022-10-19 | 2024-08-27 | 国开启科量子技术(北京)有限公司 | Needle positioning method for ion trap |
| CN118016376B (en) * | 2024-04-08 | 2024-08-13 | 国开启科量子技术(安徽)有限公司 | Method for preparing needle electrode of ion trap |
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| GB2531336B (en) * | 2014-10-17 | 2019-04-10 | Thermo Fisher Scient Bremen Gmbh | Method and apparatus for the analysis of molecules using mass spectrometry and optical spectroscopy |
| US10755913B2 (en) * | 2017-07-18 | 2020-08-25 | Duke University | Package comprising an ion-trap and method of fabrication |
| CN111383870B (en) * | 2018-12-28 | 2021-08-13 | 华为技术有限公司 | Ion trap system |
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| CN109923408A (en) * | 2016-11-18 | 2019-06-21 | 株式会社岛津制作所 | Ion analysis device |
| CN110600360A (en) * | 2019-08-01 | 2019-12-20 | 复旦大学 | Laser sputtering ultrasonic molecular beam source-ion trap mass spectrum device and operation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114706210A (en) * | 2022-04-06 | 2022-07-05 | 国仪量子(合肥)技术有限公司 | Ion loading system and method of ion loading |
| CN115201172A (en) * | 2022-07-29 | 2022-10-18 | 中国科学技术大学 | Atomic trap trace analysis system and method for measuring calcium-41 isotope abundance |
| CN116047114A (en) * | 2023-01-05 | 2023-05-02 | 北京量子信息科学研究院 | Measuring method and measuring device for surface ion trap trapping electric field distribution |
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