CN113777686B - Broadband all-dielectric low-emissivity film - Google Patents
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- CN113777686B CN113777686B CN202110957918.5A CN202110957918A CN113777686B CN 113777686 B CN113777686 B CN 113777686B CN 202110957918 A CN202110957918 A CN 202110957918A CN 113777686 B CN113777686 B CN 113777686B
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- 239000000463 material Substances 0.000 claims abstract description 74
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims abstract description 47
- 239000011521 glass Substances 0.000 claims abstract description 32
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 claims abstract description 14
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 24
- 238000002310 reflectometry Methods 0.000 abstract description 15
- 238000002834 transmittance Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 96
- 230000000737 periodic effect Effects 0.000 description 17
- 239000010410 layer Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012271 agricultural production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000005344 low-emissivity glass Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optical Filters (AREA)
Abstract
The invention relates to a broadband all-dielectric low-emissivity film, which is formed by alternately laminating two profile materials with different refractive indexes on two sides of a base material, wherein the base material is glass; wherein, the two different refractive index profile materials are high light transmittance high refractive index profile material zinc selenide and low refractive index material lithium fluoride with achromatic effect. The broadband all-dielectric low-radiation film has a larger range of infrared high-reflection frequency domain, the reflectivity at 1000nm is 96.6%, the reflectivity at 1400nm is 98.2%, the infrared reflection effects at the central wavelengths of 1000nm and 1400nm are better fitted, and the infrared reflection effect is the best.
Description
Technical Field
The invention relates to the technical field of film manufacturing, in particular to a broadband all-medium low-emissivity film.
Background
The thin films can be divided into two main types, namely, metal films and dielectric films: high loss, cut-off bandwidth, high reflection bandwidth and simple preparation, and is applied to the fields of industrial and agricultural production, astronomy, astronavigation, military and the like; dielectric film: the film has the advantages of less loss, low absorption, selectivity for reflection of visible light and infrared rays, more self-settable parameters and wide application in the aspects of high-reflection low-loss films and various complex film systems.
The function of single layer films is subject to many limitations, requiring lamination of the film system. Typically, high reflection films are designed using quarter-wave periodic film systems. A high refractive index material and a low refractive index material having a film thickness of lambda/4 n (lambda is a center wavelength, and n is a refractive index of a medium) are periodically arranged as basic units of the multilayer film. The larger the difference between the two optical constants, the higher the reflectance of the film system. In addition, the optical path difference of the reflected light on the upper surface and the lower surface of the film meets the requirement of constructive interference, and the interference of the reflected light is enhanced.
Along with the continuous improvement of the living standard of people, the demand for glass with low radiation and high visible light transmittance is outstanding. At present, low-emissivity glass mainly achieves the aim of low emissivity by depositing metal or metal composite films on glass. However, the metal film greatly reduces the visible light transmittance, for example, the Ag film has a reflectivity of 99% in the infrared region, the visible light reflectivity is also about 95%, and the visible light transmittance is very low due to the visible light absorptivity of less than 5%. Therefore, the paper is intended to design a dielectric film with a non-periodic structure to realize the dual purposes of high visible light transmission and high infrared reflection.
Disclosure of Invention
Aiming at the defects of the prior art, a broadband all-medium low-emissivity film is provided.
The technical scheme adopted for solving the technical problems is as follows: a broadband all-dielectric low-radiation film is constructed, glass is used as a base material, two profile materials with different refractive indexes are arranged on two sides of the base material and are alternately laminated; wherein, the two different refractive index profile materials are high light transmittance high refractive index profile material zinc selenide and low refractive index material lithium fluoride with achromatic effect.
The number of layers of the section materials with high and low refractive indexes are alternately laminated to form 27 layers, the middle layer is a glass substrate, the section materials arranged at the two ends from outside to inside are zinc selenide materials, a layer of lithium fluoride material is arranged between every two layers of zinc selenide materials, and lithium fluoride materials are arranged at the two sides of the glass substrate.
The thicknesses of the zinc selenide material and the lithium fluoride material which are arranged on the first side of the glass substrate in the section materials with different refractive indexes on the left side and the right side of the glass substrate are 91mm,170mm,91mm,170mm and 91mm in sequence from the glass substrate; the thicknesses of the zinc selenide material and the lithium fluoride material disposed on the second side of the glass substrate are 143mm,254mm,203mm,314mm, 143mm,314mm,203mm, 254mm,143mm.
Wherein the thickness of the glass substrate is set to 1mm.
Compared with the prior art, the invention provides a broadband all-medium low-emissivity film, which is formed by alternately laminating two profile materials with different refractive indexes on two sides of a base material, wherein the glass is used as the base material; wherein, the two different refractive index profile materials are high light transmittance high refractive index profile material zinc selenide and low refractive index material lithium fluoride with achromatic effect. The broadband all-dielectric low-radiation film has a larger range of infrared high-reflection frequency domain, the reflectivity at 1000nm is 96.6%, the reflectivity at 1400nm is 98.2%, the infrared reflection effects at the center wavelengths of 1000nm and 1400nm are better fitted, and the infrared reflection effect is the best.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
fig. 1 is a schematic structural diagram of an all-dielectric ultraviolet filter film provided by the invention.
Fig. 2 is a schematic diagram of a film optical thickness test in an all-dielectric uv filter provided by the present invention.
Detailed Description
For a clearer understanding of technical features, objects and effects of the present invention, a detailed description of embodiments of the present invention will be made with reference to the accompanying drawings.
Referring to FIG. 1, the invention provides a broadband all-dielectric low-emissivity film, which is formed by alternately laminating two profile materials with different refractive indexes on two sides of a base material, wherein the glass is used as the base material; wherein, the two different refractive index profile materials are high light transmittance high refractive index profile material zinc selenide and low refractive index material lithium fluoride with achromatic effect.
The number of layers of the section materials with high and low refractive indexes are alternately laminated to be 13, the middle layer is a glass substrate, the section materials arranged at two ends from outside to inside are zinc selenide materials, a layer of lithium fluoride material is arranged between every two layers of zinc selenide materials, and lithium fluoride materials are arranged at two sides of the glass substrate.
The thicknesses of the zinc selenide material and the lithium fluoride material which are arranged on the first side of the glass substrate in the section materials with different refractive indexes on the left side and the right side of the glass substrate are 91mm,170mm,91mm,170mm and 91mm in sequence from the glass substrate; the thicknesses of the zinc selenide material and the lithium fluoride material disposed on the second side of the glass substrate are 143mm,254mm,203mm,314mm, 143mm,314mm,203mm, 254mm,143mm.
Wherein the thickness of the glass substrate is set to 1mm.
The metal film is widely applied in life, and can reduce the infrared transmittance to a certain extent, but some physical properties of the metal film can also cause the visible light transmittance to be greatly influenced. Before the change of the reflectivity along with the wavelength under different film system structures is explored, film materials meeting the requirements of the paper are screened out, namely, the basic requirements of high infrared reflectivity and high visible light transmittance are met. According to the invention, light waves with the central wavelengths of 1000nm and 1400nm are selected as references, two full-medium materials with larger refractive index difference are searched, a non-periodic film system with the total film layer number of 13 layers is alternately formed, the non-periodic film system is plated on a glass substrate, and the high-refractive index material forms the outermost film layer of the film system.
TABLE 1 Properties of different materials and applications
Table 1 shows the properties of the different materials and their use in production and life. When LiF is used as an infrared optical material, the reflection loss is very low and is only 4.4 percent; the absorption limit of ZnSe is 480nm, i.e. the material has very low absorption in the infrared band. In addition, the refractive index difference between the two is larger, and the requirements of the target film system on the material properties are basically met. Based on the above discussion, the present invention selected ZnSe and LiF as dielectric materials for further investigation.
The basic description of the mechanism of action of the film structure to enhance reflection after finding out two film materials, znSe and LiF, is shown in FIG. 2. A certain light beam has a refractive index of n 2 Air of phi 0 Is incident on the medium with a thickness d and a refractive index n 1 The optical path difference of the light beams 2,3 can be expressed as:
Δ＝n 1 ×(AB+BC)-n 2 ×AD+λ/2＝2n 1 d×1/cosφ 1 -2n 2 d×tanφ 1 ×sinφ 0 +λ/2
and because of n 2 ×sinφ 0 ＝n 1 ×sinφ 1 Delta=2n 2 dcosφ 1 +λ/2 [7] When it isPhi when the light beam is perpendicularly incident 0 ＝0，Δ＝2n 1 d+λ/2·n 2 ＜n 1 The half-wave loss of the light beam 2 occurs at the point A, so that the condition that the interference phase between the light beam 2 and the light beam 3 is n 1 d=λ/4× (2×k-1), k=1, 2,3 … … is also calculated to make the longer wavelength beam, and k=1 is selected, then the dielectric film is followed by d=λ/(4×n) 1 )。
Half-wave loss occurs when light irradiates from the photophobic medium to the photophobic medium, the thickness of the thin film sheet is one quarter wavelength, one back and forth is one half wavelength, and half-wave loss is added, so that one wavelength is returned, the condition of interference constructive is met, the reflected energy is increased, and the energy loss in the transmission process can be reduced according to the law of conservation of energy. In general, the two layers of lenses have no obvious effect, so that the incident light needs to be transmitted through the multilayer film for generating the same-phase reflected light to enhance the reflected light, and the reflectivity in the case can reach 99% at the highest.
By selecting the central wavelength of the reflection band of 1000nm and 1400nm as reference, the performance of the multilayer film system structure formed by changing the thickness of the medium is researched, and parameters are set by the initial environment of TFcalc software: the reference wavelength is 1000nm or 1400nm; the light source is WHITE; the incident angle is 0; the incident medium is AIR; the thickness of the substrate (glass) is 1mm; the emergent medium is glass; the Detector is IDEAL; first Surface is Front, and the film material is ZnSe and LiF.
At this time, the refractive index of ZnSe was 2.48 (1000 nm), 2.45 (1400 nm), and the refractive index of LiF was 1.39 (1000 nm), 1.38 (1400 nm); the interference constructive condition of optical path difference is used to select the initial dielectric film thickness of high and low refractive index as d 1 =101 nm (1000 nm) or d 1 ＝143nm(1400nm)、d 2 =180 nm (1000 nm) or d 2 =254 nm (1400 nm), and setting h to indicate film thickness d 1 ZnSe, l represents film thickness d 2 Is a single crystal of LiF.
High-low refractive index periodic film systems composed alternately of ZnSe-LiF, in total 13 layers, i.e. (hl) 6 h, the change curve of the reflectivity along with the wavelength is wavy, and the observation shows that the infrared high reflectivity is highest when the central wavelength is 1000 nm; the absolute width of the infrared high reflection band is 245nm and the infraredThe relative width of the external high reflection is 0.245; the infrared high reflectance is highest at a center wavelength of 1400nm, the absolute width of the infrared high reflectance band is 464nm, and the relative width is 0.331.
Table 2 shows the structural condition of adjusting the dielectric film thickness for a center wavelength of 1000 nm:
TABLE 2 different film structure representations
Comparison of the optimized results for different film systems in table 2 is shown in table 3:
| film system structure | High reflectance band range (> 94%) | Reflectivity at 1000nm (%) |
| (hl) 6 h(1000) | 917～1162nm | 99.2 |
| S 1 | 1442～1956nm | 55.3 |
| S 2 | 1376～1840nm | 64.7 |
| S 3 | 919～1200nm | 99.3 |
| S 7 | 1353～1822 | 5.7 |
| S 8 | 1095～1107(＞76％) | 61.2 |
| S 9 | 914～1267 | 99.7 |
| S 10 | 930～1217 | 99.1 |
| S 11 | 920～1207 | 99.4 |
| S 12 | 1240～1631 | 33.9 |
| S 13 | 1224～1258 | 56.2 |
| S 14 | 1018～1161、1217～1434 | 88.2 |
TABLE 3 comparison of optimized results for different Membrane systems structures
Drawing and comparing the data obtained by calculating the TFcalc, and obtaining (hl) 6 h-cycle film system and S 12 When the film thickness was increased by 20nm in the non-periodic film system, it was found that the reflectance was changed with the wavelength, and S was increased by 20nm 12 The maximum difference between adjacent minima of infrared reflectance under an aperiodic film system far exceeds the infrared high reflection band wavelength difference under a periodic film system, with the minimum of the aperiodic film system reflectance being red shifted from the periodic film system. The infrared reflection effect is improved compared with the periodic film system.
Table 4 shows the structure of the adjustment of the dielectric film thickness for a center wavelength of 1400 nm:
TABLE 4 different membrane system structural representations
Comparison of the optimized results for different film systems in table 4 is shown in table 5:
| film system structure | High reflectance band range (> 94%) | Reflectance at 1400nm (%) |
| (hl) 6 h(1400) | 1220～1684nm | 99.8 |
| S 4 | 1044～1144、1202～1488nm | 98.7 |
| S 5 | 1083～1261、1337～1591nm | 98.3 |
| S 6 | 1227～1671nm | 99.8 |
| S 17 | 1232～1669 | 99.8 |
| S 18 | 1231～1722 | 99.8 |
| S 19 | 1243～1689 | 99.7 |
| S 20 | 1336～1850 | 99.3 |
| S 21 | 1321～1833 | 99.5 |
| S 22 | 1469～2002 | 53.1 |
| S 23 | 1593～2099 | 36.6 |
TABLE 5 comparison of optimized results for different Membrane systems structures
In comparison, the infrared high reflection wavelength difference of the dielectric film thickness increased by different values is increased compared with the periodic film system, but the wavelength difference is not gradually increased along with the increase of the film thickness increasing value; s of dielectric film thickness 60nm 22 The non-periodic film system has the best reflection effect.
It can be seen that the dielectric film thickness was increased by 60nm in the aperiodic film system S 22 And the maximum difference between adjacent minimum values of the infrared reflectivity is better than the wavelength difference of the infrared high reflection band under the periodic film system, and the minimum value of the reflectivity of the non-periodic film system is red-shifted compared with the periodic film system, so that the infrared reflection effect is improved.
The non-periodic film systems with different center wavelengths are now plated together to construct a combined film system.
Case 1: non-periodic film system structure S with different dielectric film thickness 1 、S 22 Attached to the left and right sides of the glass substrate, and combined to form a new film;
case 2: non-periodic film system structure S with different dielectric film thickness 22 、S 1 Attached to the right and left sides of the glass substrate, and combined to form a new film;
by analysis, it was found that the combined film reflectance of case 1 was approximately located at S where the dielectric film thickness was reduced by 10nm from the original film thickness along with the wavelength change curve 1 Non-periodic film structure and dielectric film thickness increase by 60nm S 22 Above the aperiodic film structure. The maximum difference between the minima of two adjacent wavelengths is increased, and the maximum wavelength range is 1227-to-ultra2075nm, the maximum wavelength difference is 848nm, and the infrared high reflection frequency domain range is widened.
By analysis, it was found that the combined film reflectance curve according to wavelength in case 2 was approximately located at S having a structure in which the dielectric film thickness was increased by 60nm based on the original film thickness 22 Non-periodic film system reduced S by 10nm 1 Above the aperiodic film structure. And the farthest difference value of the minimum values of two adjacent wavelengths under the combined film system is increased, the maximum frequency domain range is 1455-2114 nm, the maximum wavelength difference is 659nm, and the infrared high-reflection frequency domain range is widened.
Comparing the two superimposed combined film systems, the infrared high reflection frequency domain range of the combined film in the case 1 is larger, the reflectivity at 1000nm is 96.6%, and the reflectivity at 1400nm is 98.2%; the combined film of condition 2 had a reflectance of 78.2% at 1000nm and 97.7% at 1400 nm. The former fits better with the best infrared reflection at the center wavelengths of 1000nm and 1400 nm.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (2)
1. The broadband all-medium low-emissivity film is characterized in that the broadband all-medium low-emissivity film is formed by alternately laminating two profile materials with different refractive indexes on two sides of a base material, wherein the glass is used as the base material; the two kinds of section materials with different refractive indexes are high-light-transmission and high-refractive index section materials zinc selenide and lithium fluoride which is a low-refractive index material and has an achromatic effect, the number of layers of the section materials with the high refractive index and the low refractive index are alternately laminated, wherein the middle layer is a glass substrate, the section materials arranged at the two ends from outside to inside are zinc selenide materials, a layer of lithium fluoride material is arranged between every two layers of zinc selenide materials, lithium fluoride materials are arranged at the two sides of the glass substrate, and the thicknesses of the zinc selenide material and the lithium fluoride material which are arranged at the first side of the glass substrate are 91nm,170nm,91nm and 91nm from the glass substrate in sequence; the thicknesses of the zinc selenide material and the lithium fluoride material disposed on the second side of the glass substrate are 143nm,254nm,203nm,314nm, 143nm,314nm,203nm, 254nm,143nm.
2. The broadband full-dielectric low-emissivity film of claim 1, wherein the glass substrate has a thickness of 1mm.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745317A (en) * | 2003-02-21 | 2006-03-08 | 三井化学株式会社 | Reflector and application thereof |
| CN102736153A (en) * | 2012-07-05 | 2012-10-17 | 美德瑞光电科技（上海）有限公司 | Infrared cut-off filter with low-angle effect |
| CN107315212A (en) * | 2017-06-13 | 2017-11-03 | 杭州科汀光学技术有限公司 | Two channels filter and the method that two channels filter is prepared using spin coating blue dyes |
| CN209400726U (en) * | 2019-03-05 | 2019-09-17 | 浙江水晶光电科技股份有限公司 | Optical filter, fingerprint recognition mould group and electronic equipment |
| CN210015252U (en) * | 2019-06-05 | 2020-02-04 | 信阳舜宇光学有限公司 | Optical filter |
| CN111290066A (en) * | 2018-12-07 | 2020-06-16 | 张家港康得新光电材料有限公司 | Infrared band cut-off filter and application thereof |
| CN111856639A (en) * | 2020-07-15 | 2020-10-30 | 晋中学院 | All-dielectric ultraviolet filter film |
-
2021
- 2021-08-20 CN CN202110957918.5A patent/CN113777686B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745317A (en) * | 2003-02-21 | 2006-03-08 | 三井化学株式会社 | Reflector and application thereof |
| CN102736153A (en) * | 2012-07-05 | 2012-10-17 | 美德瑞光电科技（上海）有限公司 | Infrared cut-off filter with low-angle effect |
| CN107315212A (en) * | 2017-06-13 | 2017-11-03 | 杭州科汀光学技术有限公司 | Two channels filter and the method that two channels filter is prepared using spin coating blue dyes |
| CN111290066A (en) * | 2018-12-07 | 2020-06-16 | 张家港康得新光电材料有限公司 | Infrared band cut-off filter and application thereof |
| CN209400726U (en) * | 2019-03-05 | 2019-09-17 | 浙江水晶光电科技股份有限公司 | Optical filter, fingerprint recognition mould group and electronic equipment |
| CN210015252U (en) * | 2019-06-05 | 2020-02-04 | 信阳舜宇光学有限公司 | Optical filter |
| CN111856639A (en) * | 2020-07-15 | 2020-10-30 | 晋中学院 | All-dielectric ultraviolet filter film |
Non-Patent Citations (1)
| Title |
|---|
| TiO2/Ag/TiO2低辐射薄膜光谱特性的研究;赵亚丽等;晋中学院报;第37卷(第3期);37-40 * |
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