CN113764456B - LED chip light source and preparation method thereof - Google Patents
LED chip light source and preparation method thereof Download PDFInfo
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- CN113764456B CN113764456B CN202111057859.2A CN202111057859A CN113764456B CN 113764456 B CN113764456 B CN 113764456B CN 202111057859 A CN202111057859 A CN 202111057859A CN 113764456 B CN113764456 B CN 113764456B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
After an LED wafer is formed, bonding the LED wafer to a flexible wiring wafer by using a wafer-level bonding process, attaching an LED functional layer of the LED wafer to a second surface of the flexible wiring wafer, removing a substrate of the LED wafer, and forming a scribing groove in the LED functional layer to define a single chip area; the flexible wiring wafer can be cut into a preset shape and size along the scribing groove to form a plurality of LED chip light sources comprising at least one chip area, the cut flexible wiring wafer forms a flexible substrate of the LED chip light sources, each LED chip light source is flexible and easy to bend and fold, the problems of high reject ratio, low efficiency, high repair rate, high cost and the like caused by transferring the prepared LED chips onto a flexible circuit substrate are avoided, and the flexible display manufactured by using the Mini/Micro LED chips has mass production feasibility.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to an LED chip light source and a preparation method thereof.
Background
The current Light sources of flexible display screens that can be used for mass production are only OLED (Organic Light-Emitting Diode) Light sources, which have mainly the following drawbacks: 1) The brightness is low, the power is low, and the screen cannot be quite large; 2) The light attenuation is large, the screen is easy to burn, and the service life is short; 3) The investment cost is high, and the price is high; 4) The technical threshold is high, and the method is only mastered in the hands of a few manufacturers such as samsung.
On the other hand, the concept of using Mini/Micro LED chips to manufacture a display screen (non-flexible display screen) is fire-exploded, but mass production is difficult to realize, and because the chip area is too small, a large amount of time is required to transfer the Mini/Micro LED chips onto a circuit substrate for packaging in order to manufacture a complete display screen. The existing chip mass transfer has very low efficiency, and the transfer position is easy to deviate, so that the problems of high reject ratio, high repair rate, high cost and the like are caused, the equipment machine capability can not reach the required precision, and the feasibility of mass production is basically not provided. If the Mini/Micro LED chip is required to be used for preparing the flexible display screen, the Mini/Micro LED chip needs to be transferred onto the flexible circuit substrate in a huge amount, and the flexible display screen is difficult to manufacture because the flexible circuit substrate is easy to deform and difficult to fix.
Disclosure of Invention
The invention aims to provide an LED chip light source and a preparation method thereof, which are used for solving the problem that a Mini/Micro LED is difficult to produce a flexible display screen in quantity at present.
In order to achieve the above object, the present invention provides a method for manufacturing an LED chip light source, comprising:
providing a substrate, and forming an LED functional layer on the substrate, wherein the substrate and the LED functional layer form an LED wafer;
bonding the LED wafer to a flexible wiring wafer, and attaching the LED functional layer to a second surface of the flexible wiring wafer;
removing the substrate and forming a scribing groove in the LED functional layer to define a single chip area; the method comprises the steps of,
cutting the flexible wiring wafer into a preset shape and size along the scribing groove to form a plurality of LED chip light sources comprising at least one chip area, wherein the cut flexible wiring wafer forms a flexible substrate of the LED chip light sources.
Optionally, the number of the chip areas included in the LED chip light source is the same or different.
Optionally, the shapes of the light sources of the LED chips are the same or different.
Optionally, the sizes of the LED chip light sources are the same or different.
Optionally, the LED functional layer is an LED functional layer with a flip-chip structure, and the LED chip light source is an LED chip light source with a flip-chip structure.
Optionally, the LED functional layer of the flip-chip structure includes an epitaxial layer, a groove, a reflector layer, and a plurality of electrode groups; the step of forming the LED functional layer of the flip-chip structure on the substrate comprises the following steps:
forming the epitaxial layer on the substrate, wherein the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged on the substrate;
etching the epitaxial layer to form the recess extending from the first surface of the second semiconductor layer into the first semiconductor layer;
forming the mirror layer on a portion of the first surface of the second semiconductor layer; the method comprises the steps of,
and forming electrode groups on the reflector layer, wherein each electrode group comprises two mutually insulated electrodes, and the two electrodes are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer.
Optionally, the LED functional layer of the flip-chip structure further includes a first insulating layer and a first opening; after forming the grooves and before forming the reflector layer, the step of forming the LED functional layer of the flip-chip structure further comprises:
Forming a first insulating layer on the second semiconductor layer and on the inner wall of the groove, wherein the first insulating layer is provided with a first opening, one part of the first opening exposes part of the first semiconductor layer at the bottom of the groove, and the other part of the first opening exposes part of the second semiconductor layer; the method comprises the steps of,
the mirror layer is formed in the first opening exposing a portion of the second semiconductor layer when the mirror layer is formed.
Optionally, the LED functional layer of the flip-chip structure further includes a current expansion layer and a connection metal layer; after forming the reflector layer and before forming the electrode group, the step of forming the LED functional layer of the flip-chip structure further includes:
forming the current spreading layer on the reflector layer, wherein the current spreading layer is electrically connected with the second semiconductor layer through the reflector layer;
forming the connection metal layer on the current expansion layer and in the groove, wherein the connection metal layer is electrically connected with the first semiconductor layer, and the connection metal layer and the current expansion layer are electrically isolated from each other; the method comprises the steps of,
one of the two electrodes is electrically connected with the second semiconductor layer through the current expansion layer, and the other electrode is electrically connected with the first semiconductor layer through the connecting metal layer.
Optionally, the LED functional layer of the flip-chip structure further includes a second insulating layer and a second opening; after the current expansion layer is formed and before the connection metal layer is formed, the step of forming the LED functional layer of the flip-chip structure further comprises the following steps:
forming the second insulating layer on the first insulating layer and the current expansion layer, wherein the second insulating layer is provided with the second opening, a part of the second opening is communicated with a part of the first opening to expose a part of the first semiconductor layer, and the other part of the second opening exposes a part of the current expansion layer; the method comprises the steps of,
and when the connecting metal layer is formed, the connecting metal layer is formed on the second insulating layer and fills the communicated first opening and the second opening.
Optionally, the LED functional layer of the flip-chip structure further includes a third insulating layer and a third opening; after forming the connection metal layer and before forming the electrode group, the step of forming the LED functional layer of the flip-chip structure further includes:
and forming a third insulating layer on the second insulating layer and the connecting metal layer, wherein the third insulating layer is provided with a third opening, one part of the third opening is communicated with one part of the second opening to expose part of the current expansion layer, and the other part of the third opening exposes part of the connecting metal layer.
Optionally, two electrodes are formed on the third insulating layer, and one electrode fills the second opening and the third opening which are communicated with each other so as to be electrically connected with the current expansion layer; the other electrode fills the rest of the third opening so as to be electrically connected with the connecting metal layer.
Optionally, etching the first semiconductor layer to form the scribe line penetrating the first semiconductor layer, and bending the flexible wiring wafer before cutting the flexible wiring wafer along the scribe line, so that the first insulating layer, the second insulating layer, and the third insulating layer are broken from the scribe line.
Optionally, the LED functional layer of the flip-chip structure includes an epitaxial layer, a groove, an insulating reflective layer, and a plurality of electrode groups; the step of forming the LED functional layer of the flip-chip structure on the substrate comprises the following steps:
forming the epitaxial layer on the substrate, wherein the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged on the substrate;
etching the epitaxial layer to form the recess extending from the first surface of the second semiconductor layer into the first semiconductor layer;
Forming the insulating reflecting layer on the second semiconductor layer, wherein the insulating reflecting layer fills the concave groove; the method comprises the steps of,
the electrode groups are formed on the insulating reflecting layer, each electrode group comprises two mutually insulated electrodes, and the two electrodes penetrate through the insulating reflecting layer and are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer.
Optionally, the LED functional layer of the flip-chip structure further includes two first metals; the step of forming the LED functional layer of the flip-chip structure before forming the insulating reflective layer on the second semiconductor layer further includes:
forming a first layer of metal on the first semiconductor layer and the second semiconductor layer at the bottom of the groove respectively, wherein the two first layers of metal are electrically connected with the first semiconductor layer and the second semiconductor layer respectively; the method comprises the steps of,
after the electrode group is formed on the insulating reflecting layer, both the electrodes pass through the insulating reflecting layer and are electrically connected with one first layer metal respectively.
Optionally, the LED functional layer of the flip-chip structure further includes a current blocking layer and a current expansion layer; the step of forming the LED functional layer of the flip-chip structure before forming the first layer of metal further comprises:
Forming the current blocking layer on a portion of the first surface of the second semiconductor layer; and
the current spreading layer is formed on at least part of the first surface of the second semiconductor layer and the current blocking layer.
Optionally, etching the first semiconductor layer to form the scribe line penetrating the first semiconductor layer, and bending the flexible wiring wafer before cutting the flexible wiring wafer along the scribe line, so that the insulating reflective layer is broken from the scribe line.
Optionally, the LED functional layer is a LED functional layer with a vertical structure, and the LED chip light source is an LED chip light source with a vertical structure.
Optionally, the LED functional layer of the vertical structure includes an epitaxial layer, a reflector layer, two insulating protective layers and a plurality of electrode groups; the step of forming the LED functional layer of the vertical structure on the substrate comprises the following steps:
forming the epitaxial layer on the substrate, wherein the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged on the substrate;
forming the mirror layer on a portion of the first surface of the second semiconductor layer;
forming a first insulating protection layer on the second semiconductor layer and on the mirror layer;
Forming one electrode of the electrode group on the first insulating protection layer, wherein the one electrode penetrates through the first insulating protection layer and is electrically connected with the second semiconductor layer;
forming a second insulating protection layer on the first semiconductor layer and the second surface of the flexible wiring wafer after forming the scribe line in the LED functional layer; the method comprises the steps of,
and forming another electrode in the electrode group on the second insulating protection layer, wherein one end of the other electrode penetrates through the second insulating protection layer to be electrically connected with the first semiconductor layer, and the other end of the other electrode extends into the scribing groove and penetrates through the second insulating protection layer at the bottom of the scribing groove to be electrically connected with the flexible wiring wafer.
Optionally, the LED functional layer of the vertical structure further includes a metal protective layer; after forming the reflector layer and before forming the first insulating protection layer, the step of forming the LED functional layer of the vertical structure further includes:
the metal protection layer is formed on at least part of the first surface of the second semiconductor layer and the reflector layer.
Optionally, etching the epitaxial layer and the first insulating protection layer to form the scribe line penetrating the epitaxial layer and the first insulating protection layer; or etching the epitaxial layer to form the scribing groove penetrating through the epitaxial layer, and then bending the first insulating protection layer to fracture the first insulating protection layer from the scribing groove; the method comprises the steps of,
And bending the flexible wiring wafer before cutting the flexible wiring wafer along the scribing groove so as to break the second insulating protection layer from the scribing groove.
Optionally, the materials of the electrodes are all bond metal materials, and the LED wafer is bonded to the flexible wiring wafer by using all the electrodes.
Optionally, the bond metal material includes at least two of gold, tin, nickel, silver, and copper.
Optionally, before bonding the LED wafer to the flexible wiring wafer, the method further includes:
fixing the flexible wiring wafer on a supporting wafer; the method comprises the steps of,
the flexible wiring wafer is separated from the support wafer prior to trimming the flexible wiring wafer.
Optionally, the step of fixing the flexible wiring wafer on the supporting wafer includes:
forming an adhesive layer on the supporting wafer, and fixing the flexible wiring wafer on the supporting wafer through the adhesive layer; when the material of the bonding layer is a metal material, removing the supporting wafer and the bonding layer by adopting a grinding process so as to separate the flexible wiring wafer from the supporting wafer; and when the material of the bonding layer is an organic adhesive material, decomposing the bonding layer by adopting an organic cleaning solvent so as to separate the flexible wiring wafer from the supporting wafer.
Optionally, the thickness of the support wafer is greater than or equal to 250 μm.
Optionally, the support wafer is a silicon-containing wafer or a sapphire wafer.
Optionally, the second surface of the flexible wiring wafer has a metal wiring layer, the first surface of the flexible wiring wafer is fixed on the supporting wafer, and the LED functional layer is attached to the second surface of the flexible wiring wafer.
Optionally, the metal wiring layer includes a plurality of wiring areas, each of the wiring areas has at least one metal wire therein, and after the LED wafer is bonded to the flexible wiring wafer, one of the chip areas is aligned to one of the wiring areas, and each electrode corresponding to each of the chip areas is electrically connected to the metal wire of the corresponding wiring area.
Optionally, the material of the flexible wiring wafer is flexible glass, silica gel or epoxy resin or flexible high polymer containing silicon oxide.
Optionally, a laser lift-off process or a grinding process is used to remove the substrate.
Optionally, after removing the substrate, the method further includes:
and roughening the second surface of the first semiconductor layer of the LED functional layer by adopting alkaline solution.
The invention also provides an LED chip light source, comprising:
a flexible substrate having a predetermined shape and size; the method comprises the steps of,
the LED functional layer is provided with an electrode surface, the LED functional layer is positioned on the flexible substrate, the electrode surface is attached to the flexible substrate, and the LED functional layer comprises at least one chip area.
Optionally, the LED chip light source is an LED chip light source with a flip-chip structure, and the LED functional layer is an LED functional layer with a flip-chip structure.
Optionally, the LED functional layer of the flip-chip structure includes:
the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged from top to bottom;
a recess in the epitaxial layer extending from the first surface of the second semiconductor layer into the first semiconductor layer;
a mirror layer formed on the first surface of the second semiconductor layer and covering a portion of the second semiconductor layer; the method comprises the steps of,
the electrode group is formed on the first surface of the reflector layer and comprises two mutually insulated electrodes, the two electrodes are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer, and the first surface of the electrode is the electrode surface.
Optionally, the LED functional layer of the flip-chip structure further includes:
the current expansion layer is formed on the first surface of the reflector layer and is electrically connected with the second semiconductor layer through the reflector layer;
the connecting metal layer is formed on the first surface of the current expansion layer and fills the groove so as to be electrically connected with the first semiconductor layer, and the connecting metal layer and the current expansion layer are electrically isolated from each other; the method comprises the steps of,
one of the two electrodes is electrically connected with the second semiconductor layer through the current expansion layer, and the other electrode is electrically connected with the first semiconductor layer through the connecting metal layer.
Optionally, the LED functional layer of the flip-chip structure further includes:
the first insulating layer is formed on the first surface of the second semiconductor layer and covers the inner wall of the groove, the first insulating layer is provided with a first opening, one part of the first opening exposes part of the first semiconductor layer at the bottom of the groove, the other part of the first opening exposes part of the second semiconductor layer, and the reflector layer is positioned in the first opening exposing part of the second semiconductor layer.
Optionally, the LED functional layer of the flip-chip structure further includes:
the second insulating layer is formed on the first insulating layer and the first surface of the current expansion layer to electrically isolate the current expansion layer from the connecting metal layer, wherein the second insulating layer is provided with a second opening, one part of the second opening is communicated with one part of the first opening to expose part of the first semiconductor layer, and the other part of the second opening exposes part of the current expansion layer.
Optionally, the connection metal layer is formed on the first surface of the second insulating layer and fills the first opening and the second opening which are communicated with each other, so as to be electrically connected with the first semiconductor layer.
Optionally, the LED functional layer of the flip-chip structure further includes:
and a third insulating layer formed on the second insulating layer and the first surface of the connection metal layer to electrically isolate the two electrodes, wherein the third insulating layer is provided with a third opening, a part of the third opening is communicated with a part of the second opening to expose a part of the current expansion layer, and the other part of the third opening exposes a part of the connection metal layer.
Optionally, two electrodes are located on the first surface of the third insulating layer, and one electrode fills the second opening and the third opening which are communicated with each other so as to be electrically connected with the current expansion layer; the other electrode fills the rest of the third opening so as to be electrically connected with the connecting metal layer.
Optionally, the LED functional layer of the flip-chip structure includes:
the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged from top to bottom;
a recess extending from the first surface of the second semiconductor layer into the first semiconductor layer;
an insulating reflection layer formed on the first surface of the second semiconductor layer and filling the groove; the method comprises the steps of,
the electrode groups are formed on the first surface of the insulating reflecting layer, each electrode group comprises two mutually insulated electrodes, the two electrodes penetrate through the insulating reflecting layer and are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer, and the first surface of each electrode is the electrode surface.
Optionally, the LED functional layer of the flip-chip structure further includes:
Two first-layer metals respectively formed on the first surfaces of the first semiconductor layer and the second semiconductor layer at the bottom of the groove, wherein the two first-layer metals are respectively electrically connected with the first semiconductor layer and the second semiconductor layer; the method comprises the steps of,
both the electrodes pass through the insulating reflecting layer and are electrically connected with one first layer metal respectively.
Optionally, the LED functional layer of the flip-chip structure further includes:
a current blocking layer formed on a portion of the first surface of the second semiconductor layer; and
and the current expansion layer is formed on at least part of the first surface of the second semiconductor layer and the first surface of the current blocking layer.
Optionally, the LED chip light source is a LED chip light source with a vertical structure, and the LED functional layer is an LED functional layer with a vertical structure.
Optionally, the LED functional layer of the vertical structure includes:
the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged from top to bottom;
a mirror layer formed on a portion of the first surface of the second semiconductor layer;
two insulating protection layers, wherein a first insulating protection layer is formed on the second semiconductor layer and the first surface of the reflector layer, and a second insulating protection layer is formed on the second surface of the first semiconductor layer and the exposed second surface of the flexible wiring wafer;
The electrode groups are formed on the first surface of the first insulating protection layer, and penetrate through the first insulating protection layer to be electrically connected with the second semiconductor layer, the other electrode in the electrode groups is formed on the second surface of the second insulating protection layer, two ends of the electrode groups penetrate through the second insulating protection layer to be electrically connected with the first semiconductor layer and the flexible wiring wafer respectively, and the first surfaces of the electrode groups are the electrode surfaces.
Optionally, the LED functional layer of the vertical structure further includes:
and the metal protection layer is formed on at least part of the first surface of the second semiconductor layer and the first surface of the reflector layer.
Optionally, the second surface of the flexible substrate is provided with a metal wiring layer, and the electrode surface is attached to the second surface of the flexible substrate.
Optionally, the metal wiring layer includes at least one wiring area, each wiring area has at least one metal wire therein, one of the chip areas is aligned to one of the wiring areas, and the electrode corresponding to each of the chip areas is electrically connected to the metal wire of the corresponding wiring area.
Optionally, the flexible substrate is made of flexible glass, silica gel or epoxy resin or flexible high polymer containing silicon oxide.
In the LED chip light source and the preparation method thereof provided by the invention, after an LED wafer is formed, the LED wafer is bonded to a flexible wiring wafer by utilizing a wafer-level bonding process, an LED functional layer of the LED wafer is attached to a second surface of the flexible wiring wafer, and then a substrate of the LED wafer is removed and a scribing groove is formed in the LED functional layer, so that a single chip area can be defined; the flexible wiring wafer can be cut into preset shapes and sizes along the scribing grooves to form a plurality of LED chip light sources comprising at least one chip area, the LED chip light sources with various shapes and sizes can be prepared, the cut flexible wiring wafer forms a flexible substrate of the LED chip light sources, each LED chip light source is flexible and easy to bend and fold, the problems of high reject ratio, low efficiency, high repair rate, high cost and the like caused by transferring the prepared LED chips onto a flexible circuit substrate are avoided, and the flexible display screen prepared by using Mini/Micro LED chips is feasible in mass production.
Furthermore, the luminance of the unit area of the light source of the flexible LED chip provided by the invention is several times higher than that of the OLED, and the light source can be used as a large-size screen, and has the advantages of small light attenuation, no screen burning, long service life and low cost.
Drawings
Fig. 1 is a flowchart of a method for manufacturing an LED chip light source according to an embodiment of the present invention;
fig. 2 to 18 are schematic structural views of corresponding steps of a method for manufacturing an LED chip light source with a flip-chip structure according to a first embodiment of the present invention;
fig. 19 to 29 are schematic structural views of corresponding steps of a method for manufacturing an LED chip light source with flip-chip structure according to a second embodiment of the present invention;
fig. 30 to 39 are schematic structural views of corresponding steps of a method for manufacturing a vertical structure LED chip light source according to the third embodiment of the present invention;
wherein, the reference numerals are as follows:
100-a substrate; 200-an epitaxial layer; 201-a first semiconductor layer; 202-a light emitting layer; 203-a second semiconductor layer; 200 a-grooves; 300-a current blocking layer; 301-a first insulating layer; 302-a second insulating layer; 303-a third insulating layer; 304-a first insulating protective layer; 305-a second insulating protective layer; 400. 405-a mirror layer; 401-an insulating reflective layer; 403-fourth opening; 404-a fifth opening; 406-a metal protective layer; 500-current spreading layer; 501-a current spreading layer; 502-connecting the metal layers; 503-a first layer of N metal; 504-first layer P-metal; 60-chip area; 600-electrode; 601-a first electrode; 602-a second electrode; 700-scribing grooves; 80-wiring area; 801-a first metal line; 802-second metal lines;
001-supporting a wafer; 002-flexible wiring wafer; 012-flexible substrate; 003-adhesive layer; 004-LED wafer.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are not to scale precisely, but rather are merely intended to facilitate a clear and concise description of embodiments of the present inventions.
Example 1
Fig. 18 is a schematic structural diagram of an LED chip light source according to the present embodiment. As shown in fig. 18, the LED chip light source includes a flexible substrate 012 and an LED functional layer, the flexible substrate 012 has a predetermined shape and size, the LED functional layer is located on the flexible substrate 012, and the LED functional layer includes at least one chip region.
Referring to fig. 15, in the present embodiment, the LED functional layer includes only one chip region 60, but is not limited thereto, and in other embodiments, the LED functional layer may further include a plurality of chip regions 60, so that the LED chip light source may be of any possible shape and size, and the application range is very wide.
Further, the second surface of the flexible substrate 012 has a metal wiring layer, and the LED functional layer is bonded to the second surface of the flexible substrate 012, which corresponds to bonding the LED functional layer to the metal wiring layer. The metal wiring layer includes at least one wiring area 80, each of the wiring areas has at least one metal wire therein, one of the chip areas 60 is aligned to one of the wiring areas 80, and the corresponding electrode of each of the chip areas 60 is electrically connected to the metal wire of the corresponding wiring area 80.
In this embodiment, two metal wires, namely, a first metal wire 801 and a second metal wire 802, are disposed in the wiring area 80, the chip area 60 corresponds to two electrodes, namely, a first electrode 601 and a second electrode 602, the first electrode 601 is electrically connected to the first metal wire 801, and the second electrode 602 is electrically connected to the second metal wire 802.
Further, the flexible substrate 012 is made of flexible glass, silica gel, epoxy resin, or a flexible polymer containing silicon oxide, so that the LED chip light source is flexible and easy to bend and fold.
Specifically, in this embodiment, the LED chip light source is an LED chip light source with a flip-chip structure, and the LED functional layer is an LED functional layer with a flip-chip structure.
Referring to fig. 10, the LED functional layer of the flip-chip structure includes an epitaxial layer 200, a recess 200a, a reflective mirror layer 400, a current spreading layer 501, a connection metal layer 502, a first insulating layer 301, a second insulating layer 301, a third insulating layer 303, a first opening, a second opening, a third opening, and an electrode set.
Specifically, the epitaxial layer 200 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203, which are sequentially disposed from bottom to top. In this embodiment, the first semiconductor layer 201 in the epitaxial layer 200 is an N-type semiconductor layer, and the material of the first semiconductor layer 201 is N-GaN; the light-emitting layer 202 is a multi-period quantum well layer (MQWS), and the material of the quantum well layer is any one or a combination of a plurality of AlN, gaN, alGaN, inGaN, alInGaN; the second semiconductor layer 203 is a P-type semiconductor layer, and the material of the second semiconductor layer 203 is P-GaN.
In this embodiment, the total thickness of the epitaxial layer 200 is 5 μm to 10 μm.
Further, the recess 200a is located in the epitaxial layer 200, the recess 200a penetrates through the light emitting layer 202 from the first surface of the second semiconductor layer 203 and extends into the first semiconductor layer 201, the recess 200a forms a MESA step, an upper step surface of the MESA step is the second semiconductor layer 203, a lower step surface is the first semiconductor layer 201, and a MESA step side is formed by connecting the upper step surface and the lower step surface.
With continued reference to fig. 10, the first insulating layer 301 covers the sidewall and a portion of the bottom surface of the recess 200a, and further extends laterally to cover a portion of the first surface of the second semiconductor layer 203, that is, the first insulating layer 301 covers the MESA step side, a portion of the upper step surface, and a portion of the lower step surface, exposing a portion of the first semiconductor layer 201 and a portion of the second semiconductor layer 203. Alternatively, it may be understood that the first insulating layer 301 covers the second semiconductor layer 203 and the inner wall of the recess 200a, and a plurality of first openings are formed in the first insulating layer 301, where a part of the first openings are located in the recess 200a to expose a part of the first semiconductor layer 201 at the bottom of the recess 200a, and another part of the first openings are located on the second semiconductor layer 203 to expose a part of the second semiconductor layer 203.
In this embodiment, the thickness of the first insulating layer 301 is 10nm to 10 μm. The material of the first insulating layer 301 includes at least one of silicon oxide, silicon nitride, and DBR. The first insulating layer 301 serves to protect the MESA step side from contamination by long-term exposure to air, thereby avoiding failure of the on voltage VFin and/or the leakage current IR.
The mirror layer 400 is formed on the first surface of the second semiconductor layer 203 and is located in the first opening exposing a portion of the second semiconductor layer 203, and the mirror layer 400 covers the first surface of the second semiconductor layer 203 exposed by the first opening, so that the mirror layer 400 can be electrically connected to the second semiconductor layer 203. The reflecting mirror layer 400 has a light reflecting effect, and can reflect the light emitted from the light emitting layer 202 toward the second semiconductor layer 203 back. The reflector layer 400 includes one or more of silver (Ag), aluminum (Al) and ITO, and in this embodiment, the reflector layer 400 is a silver layer.
In this embodiment, the thickness of the mirror layer 400 is 100 nm-2 μm, and the distance between the mirror layer 400 and the side of the MESA step is 0 um-6 um, that is, the lateral distance between the mirror layer 400 and the side of the MESA step is 0 um-6 um, and compared with the large distance between the mirror layer 400 and the side of the MESA step in the prior art, the present embodiment has no need to consider the contamination problem of the MESA step because the first insulating layer 301 is preset, so that the distance between the mirror layer 400 and the side of the MESA step can be greatly reduced, that is, the area of the mirror layer 400 can be made larger, and then the reflection effect is better.
The current spreading layer 501 is formed on the first surface of the mirror layer 400, covers the first surface of the mirror layer 400 and a portion of the first insulating layer 301, and is electrically connected to the second semiconductor layer 203 through the mirror layer 400, and the current spreading layer 501 is used as a P-layer current spreading layer. In this embodiment, the current spreading layer 501 completely covers the mirror layer 400, so as to protect the mirror layer 400 from leakage caused by electron migration. The material of the current spreading layer 501 includes one or more of titanium (Ti), platinum (Pt), aluminum (Al), nickel (Ni), chromium (Cr), and gold (Au). The current spreading layer 501 has a function of spreading the entire current in addition to protecting the mirror layer 400, and thus has a requirement for its thickness, and too thin current spreading is not good, and it is preferable that the thickness of the current spreading layer 501 is 0.5 μm to 3 μm.
As an alternative embodiment, the current spreading layer 501 may be located on the first surface of the mirror layer 400 and cover the first surface of the mirror layer 400, and the first surface of the first insulating layer 301 may be free of the current spreading layer 501.
The second insulating layer 302 is located on the first surface of the first insulating layer 301 and the current spreading layer 501. Alternatively, the second insulating layer 302 covers the current spreading layer 501 and extends into the recess 200a to cover the first surface of the first insulating layer 301. The second insulating layer 302 has a plurality of second openings, a portion of which is located in the recess 200a and is in communication with the first openings in the recess 200a to expose a portion of the first semiconductor layer 201 at the bottom of the recess 200a, and another portion of which is located on the first surface of the current spreading layer 501 to expose the portion of the current spreading layer 501.
In this embodiment, the thickness of the second insulating layer 302 is 10nm to 10 μm. The material of the second insulating layer 302 includes at least one of silicon oxide, silicon nitride, and DBR. Since the first insulating layer 301 protects the MESA step side in advance, the second insulating layer 302 functions as an insulating protection for the current spreading layer 501.
The connection metal layer 502 is located on the first surface of the second insulating layer 302. The connection metal layer 502 covers a portion of the first surface of the second insulating layer 302 and fills the first and second openings that are in communication, and covers a portion of the first semiconductor layer 201 where the first and second openings are exposed. It should be appreciated that the connection metal layer 502 also fills the recess 200a so as to be electrically connected to the first semiconductor layer 201.
In this embodiment, the material of the connection metal layer 502 includes one or more of titanium (Ti), platinum (Pt), aluminum (Al), nickel (Ni), chromium (Cr) and gold (Au). Similarly, the connection metal layer 502 has an effect of expanding the entire current, and thus has a requirement for its thickness, and too thin current expansion is not good, and preferably the connection metal layer 502 has a thickness of 0.5 μm to 3 μm.
The third insulating layer 303 is located on the first surface of the connection metal layer 502 and the second insulating layer 302. The third insulating layer 303 has a plurality of third openings, a part of the third openings are communicated with the second openings exposing a part of the current spreading layer 501, and another part of the third openings expose a part of the connection metal layer 502. The third insulating layer 303 may electrically isolate the connection metal layer 502 from the second electrode 602 formed later, so as to prevent a short circuit between the connection metal layer 502 for expanding N current and the second electrode 602 for inputting P current, and the third insulating layer 303 may also protect a side surface and a part of a surface of the device.
In this embodiment, the thickness of the third insulating layer 303 is 10nm to 10 μm, and the material of the third insulating layer 303 includes at least one of silicon oxide, silicon nitride and DBR.
The electrode group includes a first electrode 601 and a second electrode 602, where the first electrode 601 and the second electrode 602 are both located on the first surface of the third insulating layer 303. The first electrode 601 covers a portion of the first surface of the third insulating layer 303 and fills the third opening exposing the connection metal layer 502, and the second electrode 602 covers a portion of the first surface of the third insulating layer 303 and fills the third opening and the second opening that are in communication. In this way, the first electrode 601 may be electrically connected to the first semiconductor layer 201 through the connection metal layer 502, and the second electrode 602 may be electrically connected to the second semiconductor layer 203 through the current spreading layer 501.
The first electrode 601 and the second electrode 602 are electrically isolated from each other by a certain distance. In this embodiment, the first electrode 601 and the second electrode 602 are spaced apart by a distance of 10 μm to 300 μm.
In this embodiment, the thickness of the first electrode 601 and the second electrode 602 is 0.1 μm to 10 μm. In this embodiment, the materials of the first electrode 601 and the second electrode 602 are all bond metal materials, so as to facilitate the subsequent bonding process, where the bond metal materials may be at least two metals selected from gold (Au), tin (Sn), nickel (Ni), silver (Ag) and copper (Cu), for example, the bond metal materials may be AuSn, niSn or SnAgCu.
As can be seen from fig. 18, the first surfaces of the first electrode 601 and the second electrode 602 are bonded to the second surface of the flexible wiring wafer 002 as electrode surfaces of the LED functional layers.
Fig. 1 is a flowchart of a method for manufacturing an LED chip light source according to this embodiment. As shown in fig. 1, the preparation method of the LED chip light source includes:
step S100: providing a substrate, forming an LED functional layer on the substrate, wherein the substrate and the LED functional layer form an LED wafer;
step S200: bonding the LED wafer to a flexible wiring wafer, and attaching the LED functional layer to a second surface of the flexible wiring wafer;
step S300: removing the substrate and forming a scribing groove in the LED functional layer to define a single chip area; the method comprises the steps of,
step S400: cutting the flexible wiring wafer into a preset shape and size along the scribing groove to form a plurality of LED chip light sources comprising at least one chip area, wherein the cut flexible wiring wafer forms a flexible substrate of the LED chip light sources.
In this embodiment, the LED chip light source is an LED chip light source with a flip-chip structure, and fig. 2 to 18 show schematic structural diagrams of corresponding steps of the method for manufacturing an LED chip light source with a flip-chip structure according to this embodiment. Next, a method for manufacturing the LED chip light source provided in this embodiment will be described in detail with reference to fig. 2 to 18 by taking an LED chip light source of a flip-chip structure as an example.
Referring to fig. 2, step S100 is performed to provide a substrate 100, and an LED functional layer is formed on the substrate 100.
In this embodiment, the substrate 100 is a high-transmittance sapphire substrate (Al 2 O 3 ) As an alternative embodiment, the substrate 100 may also be a substrate such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or zinc oxide (ZnO). Further, the substrate 100 is a patterned substrate (Patterned Sapphire Substrates, PSS), for example a micro/nano patterned sapphire substrate. An LED functional layer of the flip-chip structure is formed on the substrate 100.
First, referring to fig. 2, an epitaxial layer 200 is formed on the substrate 100, where the epitaxial layer 200 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 sequentially disposed from bottom to top.
The epitaxial layer 200 is formed, for example: a pattern is etched on the substrate 100 using a standard photolithography process, and then the substrate 100 is etched using an ICP etching technique to pattern the substrate 100, for improving light emission efficiency. Further, the epitaxial layer 200 may be fabricated on the substrate 100 by any one of epitaxial techniques such as metal chemical vapor deposition, laser-assisted molecular beam epitaxy, hydride vapor phase epitaxy, evaporation, etc., and the epitaxial layer 200 may be a polycrystalline structure or a single crystal structure.
Referring to fig. 3, the epitaxial layer 200 is partially etched at periodic intervals to form periodic grooves 200a, and the grooves 200a penetrate through the second semiconductor layer 203 and the light emitting layer 202 and extend into the first semiconductor layer 201.
Specifically, the step of forming the recess 200a includes: by photolithography, a light emitting region MESA pattern is formed, and the epitaxial layer 200 is etched by ICP (inductively coupled plasma) to form the recess 200a, the depth of etching needs to exceed the light emitting layer 202 and expose the first semiconductor layer 201, and a MESA (MESA) is etched from the side to form a MESA step.
In this embodiment, the number of the grooves 200a is one or more, and the plurality of the grooves 200a may have a periodic interval, for example, 10 μm to 300 μm, the depth of the grooves 200a is 1 μm to 2 μm, and the width of the grooves 200a is 20 μm to 100 μm.
Referring to fig. 4, a first insulating layer 301 is formed on the MESA step side, a part of the upper step surface, and a part of the lower step surface. The specific forming steps of the first insulating layer 301 may be: a first insulating material layer (not shown in fig. 4) is formed by PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma-enhanced chemical vapor deposition), then masked with a positive photoresist, and etched with ICP (inductively coupled plasma) or with BOE solution or HF solution to form a plurality of first openings, one of which exposes a portion of the first semiconductor layer 201 and the other of which exposes a portion of the second semiconductor layer 203, and the remaining first insulating material layer constituting the first insulating layer 301.
Referring to fig. 5, a mirror layer 400 is formed on the second semiconductor layer 203. The step of forming the mirror layer 400 includes: a mask pattern is formed by a negative photoresist lithography process, a mirror film with high reflectivity is grown by processes such as electron beam evaporation, sputtering, ALD (Atomic layer deposition ) and the like, and finally the mask and the mirror film on the mask are removed by lift off and the like, and the remaining mirror film constitutes the mirror layer 400. It should be appreciated that the mirror layer 400 needs to completely expose the recess 200 a.
As an alternative embodiment, the mirror layer 400 may be formed by forming a layer on N 2 And forming good ohmic contact with the second semiconductor layer 203 by high-temperature annealing in atmosphere.
Referring to fig. 6, a current spreading layer 501 is formed on the mirror layer 400. The forming step of the current spreading layer 501 may be: a mask pattern is formed by a negative photoresist lithography process, then a current expansion film is grown by electron beam evaporation, sputtering, ALD, etc., and finally a gold stripping and photoresist stripping process is used to remove the mask and the current expansion film on the mask, and the remaining current expansion film forms the current expansion layer 501.
Referring to fig. 7, a second insulating layer 302 is formed on the first insulating layer 301 and the current spreading layer 501. The forming step of the second insulating layer 302 may be: a second insulating material layer (not shown in fig. 7) is formed by PECVD, and then a mask is made using positive photoresist, and the second insulating material layer is etched using ICP (inductively coupled plasma) or etched using BOE solution or HF solution to form a portion of a second opening, and the second opening formed at this time communicates with the first opening in the recess to expose a portion of the first semiconductor layer 201 at the bottom of the recess 200 a.
Referring to fig. 8, a connection metal layer 502 is formed on the second insulating layer 302. The forming step of the connection metal layer 502 may be: and (3) preparing a mask pattern through a negative photoresist photoetching process, growing a current expansion film through electron beam evaporation, sputtering, ALD and the like, and finally removing the mask and the current expansion film on the mask through a gold tearing and photoresist removing process, wherein the rest of the current expansion film forms the connecting metal layer 502.
Referring to fig. 9, a third insulating layer 303 is formed on the connection metal layer 502. The third insulating layer 303 is preferably formed by PECVD, then a mask is made by using positive photoresist, and the third insulating layer 303 is etched by ICP (inductively coupled plasma) or by etching the material layer of the third insulating layer 303 with BOE solution or HF solution, so as to form third openings, where all the third openings only expose the connection metal layer 502. Next, a portion of the second insulating layer 302 at the bottom of the third opening needs to be etched to form a second opening again in the second insulating layer 302, where the second opening is formed to communicate with the third opening above it. Finally, the remaining third insulating material layer constitutes the third insulating layer 303, and the remaining second insulating material layer constitutes the second insulating layer 302.
Referring to fig. 10, a plurality of electrode groups are formed on the third insulating layer 303, each of the electrode groups including a first electrode 601 and a second electrode 602. The step of forming the first electrode 601 and the second electrode 602 may be: and (3) preparing a mask pattern through a negative photoresist photoetching process, growing a conductive metal film through processes such as electron beam evaporation, sputtering, ALD and the like, removing the mask and the conductive metal film on the mask through gold tearing and photoresist removing processes, and forming the first electrode 601 and the second electrode 602 by the residual conductive metal film.
Referring to fig. 11, after the LED functional layer is formed, the LED functional layer and the substrate 100 together form the LED wafer 004. The LED wafer 004 has a plurality of chip areas 60 distributed in an array, each chip area 60 is used for forming one LED chip, and one chip area 60 corresponds to one electrode group.
Referring to fig. 12, step S200 is performed to provide a flexible wiring wafer 002, where the flexible wiring wafer 002 is designed with a metal wiring layer (not shown) according to the requirement, and in this embodiment, the metal wiring layer is located on the second surface of the flexible wiring wafer 002, but not limited thereto. Further, the metal wiring layer has a plurality of wiring areas 80 distributed in an array, and each of the wiring areas 80 corresponds to one of the chip areas 60.
Further, the flexible wiring wafer 002 is prepared using a flexible substrate, so that the flexible wiring wafer 002 has flexibility, and thus, the material of the flexible substrate may be a flexible material, such as flexible glass, silica gel, epoxy resin, or other flexible high molecular polymer (e.g., flexible high molecular polymer containing silicon oxide). Optionally, the material of the flexible substrate may be a high temperature resistant material, so as to avoid being damaged in a subsequent preparation process, for example, high temperature resistant flexible glass, high temperature resistant silica gel, high temperature resistant epoxy resin or other high temperature resistant flexible high polymer.
Referring to fig. 13, a supporting wafer 001 is provided, and the flexible wiring wafer 002 is fixed on the supporting wafer 001, and since the second surface of the flexible wiring wafer 002 has the metal wiring layer, the first surface of the flexible wiring wafer 002 is fixed to the supporting wafer 001 so that the metal wiring layer of the second surface of the flexible wiring wafer 002 is exposed. Each of the wiring regions 80 of the metal wiring layer has a first metal line 801 and a second metal line 802 thereon for electrically connecting with the first electrode 601 and the second electrode 602 of the corresponding chip region 60, respectively, and transferring charges to the corresponding LED chip.
The supporting wafer 001 provides support for the flexible wiring wafer 002 in the subsequent manufacturing process, and therefore, the supporting wafer 001 may be a wafer such as a silicon wafer or a sapphire wafer that can provide a supporting force.
Further, in this embodiment, the flexible wiring wafer 002 is fixed on the supporting wafer 001 by an adhesive layer 003, and the adhesive layer 003 is used for adhering the flexible wiring wafer 002 to the supporting wafer 001. In this embodiment, the material of the adhesive layer 003 is a metal material, a metal material layer may be formed on the supporting wafer 001, and then the flexible wiring wafer 002 is pressed onto the metal material layer by a pressing manner, so that the flexible wiring wafer 002 is fixed on the supporting wafer 001; alternatively, a metal solution may be spot-coated or coated on the supporting wafer 001, and the flexible wiring wafer 002 is placed on the supporting wafer 001, and the adhesive layer 003 is formed after the metal solution is solidified, so as to fix the flexible wiring wafer 002 and the supporting wafer 001.
As an alternative embodiment, the material of the adhesive layer 003 may be an organic adhesive material such as photoresist, an organic adhesive is coated on the supporting wafer 001, and the flexible wiring wafer 002 is placed on the supporting wafer 001, and the fixing of the flexible wiring wafer 002 and the supporting wafer 001 can be achieved after the organic adhesive is cured.
Optionally, in order to ensure that the supporting wafer 001 has good supporting performance, in this embodiment, the thickness of the supporting wafer 001 is greater than or equal to 250 μm.
Referring to fig. 14, the LED wafer 004 is bonded to the flexible wiring wafer 002, and the electrode surface of the LED functional layer is bonded to the second surface of the flexible wiring wafer 002. That is, the LED wafer 004 is turned over and bonded to the flexible wiring wafer 002, and the first surfaces of the first electrode 601 and the second electrode 602 are bonded to the metal wiring layer of the flexible wiring wafer 002. Since the first electrode 601 and the second electrode 602 are made of bonding metal materials, the LED wafer 004 can be bonded to the flexible wiring wafer 002 by using all the first electrode 601 and the second electrode 602.
Referring to fig. 15, when the LED wafer 004 is bonded to the flexible wiring wafer 002, one of the chip regions 60 is aligned with one of the wiring regions 80, the first electrode 601 and the second electrode 602 in the chip region 60 respectively contact the first metal line 801 and the second metal line 802 of the corresponding wiring region 80, the first electrode 601 is electrically connected to the first metal line 801, and the second electrode 602 is electrically connected to the second metal line 802.
It should be appreciated that the substrate 100 in this embodiment is a transparent substrate, and when the LED wafer 004 is bonded to the flexible wiring wafer 002, the alignment mark on the flexible wiring wafer 002 can be seen through the substrate 100, so that precise alignment of the LED wafer 004 and the flexible wiring wafer 002 can be achieved.
Referring to fig. 16, step S300 is performed to remove the substrate 100 by a laser lift-off process or a polishing process, and coarsen the first semiconductor layer 201 of the LED functional layer by an alkaline solution to increase the light extraction efficiency.
It should be appreciated that the alkaline solution may be a solvent such as sodium hydroxide (NaOH) or potassium hydroxide (KOH).
Referring to fig. 17, the first semiconductor layer 201 is etched to form a scribe line 700 penetrating the first semiconductor layer 201. The scribe line 700 is formed to cross the first semiconductor layer 201 and completely cut off the first semiconductor layer 201, and each rectangular area divided by the scribe line 700 is a single chip area 60, that is, each chip area 60 is separated by the scribe line 700, so that each individual chip area 60 is defined by the scribe line 700.
It should be appreciated that, when etching the first semiconductor layer 201 to form the scribe line 700, an etchant having a relatively large etching selectivity with respect to the first, second and third insulating layers 301, 302 and 303 may be selected, so that the first, second and third insulating layers 301, 302 and 303 are prevented from being etched together when etching the first semiconductor layer 201, thereby damaging the metal wiring layer of the flexible wiring wafer 002, which may result in a reduction in the conductive performance of the chip.
Referring to fig. 18, step S400 is performed to separate the flexible wiring wafer 002 from the supporting wafer 001. In this embodiment, since the material of the adhesion layer 003 is a metal material, the supporting wafer 001 and the adhesion layer 003 are removed by a polishing process, so that the flexible wiring wafer 002 is separated from the supporting wafer 001.
As an alternative embodiment, when the material of the adhesive layer 003 is an organic gel material, an organic cleaning solvent may be used to decompose the adhesive layer 003, thereby separating the flexible wiring wafer 002 from the supporting wafer 001.
Next, the flexible wiring wafer 002 is bent. Since the first insulating layer 301, the second insulating layer 302 and the third insulating layer 301 are all made of insulating materials, the brittleness is high, and when the flexible wiring wafer 002 is bent, the first insulating layer 301, the second insulating layer 302 and the third insulating layer 301 are broken from the scribe line 700, so that the chip area 60 of the LED wafer 004 is thoroughly separated. Next, the flexible wiring wafer 002 is cut into a predetermined shape and size along the scribe line 700 to form a plurality of LED chip light sources including at least one chip region, which corresponds to the LED chip light sources that can be formed into any shape and size, and the applicability is wide; in addition, the flexible wiring wafer 002 after cutting constitutes the flexible substrate 012 of the LED chip light source, so that each LED chip light source has flexibility, is easy to bend and fold, and avoids the problems of high reject ratio, low efficiency, high repair rate, high cost and the like caused by transferring the prepared LED chips onto the flexible circuit substrate, so that the flexible display screen prepared by using the Mini/Micro LED chips has mass production feasibility.
Example two
The difference between the first embodiment and the second embodiment is that in this embodiment, the LED chip light source is another LED chip light source with a flip-chip structure, and meanwhile, the LED functional layer is also another LED functional layer with a flip-chip structure.
Referring to fig. 26, the LED functional layers include an epitaxial layer 200, a recess 200a, a current blocking layer 300, a current spreading layer 500, two first metals, an insulating reflective layer 401, and an electrode set.
Specifically, in this embodiment, the epitaxial layer 200 is formed on the first surface of the substrate 100, and the epitaxial layer 200 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 sequentially disposed from bottom to top.
The recess 200a is located at an edge of the epitaxial layer 200, and the recess 200a extends from the first surface of the second semiconductor layer 203 into the first semiconductor layer 201 after penetrating the light emitting layer 202.
With continued reference to fig. 26, the current blocking layer 300 and the current spreading layer 500 are both formed on the first surface of the second semiconductor layer 203, the current blocking layer 300 covers a portion of the first surface of the second semiconductor layer 203, and the current blocking layer 300 has a good current guiding effect. The current spreading layer 500 has a width in a direction perpendicular to the thickness direction larger than that of the current blocking layer 300, so that the current spreading layer 500 covers not only a portion of the first surface of the second semiconductor layer 203 but also the current blocking layer 300 entirely, thereby facilitating lateral spreading of a current.
In this embodiment, the current blocking layer 300 and the current spreading layer 500 are transparent films, so that the light extraction efficiency and the light extraction intensity are not adversely affected. The material of the current blocking layer 300 may be silicon oxide, silicon nitride, titanium oxide, aluminum oxide, or perovskite type electronic ceramic (ABO) 3 ) Etc.; the current spreading layer 500 is made of ITO or AZO. In this embodiment, the current blocking layer 300 is a single silicon oxide layer, and the material of the current spreading layer 500 is ITO.
With continued reference to fig. 26, the two first metals are a first N metal 503 and a first P metal 504, respectively, and the first N metal 503 and the first P metal 504 are formed in the recess 200a and on the first surface of the current spreading layer 500, respectively. The first layer N metal 503 is located at the bottom of the groove 200a and is electrically connected to the first semiconductor layer 201, and in a direction perpendicular to the thickness direction, the width of the first layer N metal 503 is smaller than the width of the groove 200a, and a gap is formed between the first layer N metal 503 and the sidewall of the groove 200a, so that electrical insulation is achieved between the first layer N metal 503 and the first layer P metal 504; the first layer P-metal 504 is located on the current spreading layer 500 and is electrically connected to the second semiconductor layer 203 through the current spreading layer 500.
Further, the first layer P-metal 504 corresponds to the position of the current blocking layer 300, and the area of the current blocking layer 300 is larger than that of the first layer P-metal 504, the current blocking layer 300 can reduce light loss caused by light absorption/light blocking of the first layer P-metal 504, reduce vertical current transmission, and increase lateral transmission.
Further, the insulating reflective layer 401 covers the first surface of the second semiconductor layer 203 and fills the recess 200a. That is, the entire surface of the insulating reflective layer 401 covers the chip area, and the gap between the first layer N metal 503 and the sidewall of the recess 200a is also filled with the insulating reflective layer 401, so that the first layer N metal 503 and the first layer P metal 504 can be electrically insulated by the insulating reflective layer 401. Meanwhile, the insulating reflective layer 401 has a light reflecting effect, and can act as a reflecting mirror, so that a part of the light emitted from the light emitting layer 202, which is directed to the insulating reflective layer 401, can be reflected back. The material of the insulating reflective layer 401 includes two or more of silicon oxide, titanium oxide, aluminum oxide or silicon nitride, and in this embodiment, the insulating reflective layer 401 is formed by alternately evaporating at least two film layers with high and low refractive indexes, but not limited thereto.
In this embodiment, the insulating reflective layer 401 may not only realize electrical insulation between the first layer N metal 503 and the first layer P metal 504, but also act as a mirror, and since the insulating reflective layer 401 is covered by the entire surface, the area is larger, and the reflective effect is better.
With continued reference to fig. 26, the electrode set includes two electrodes, which are a first electrode 601 and a second electrode 602, respectively. The first electrode 601 penetrates through the insulating reflective layer 401, and the second surface of the first electrode 601 contacts with the first layer N metal 503 to realize electrical connection, so that the first electrode 601 can be electrically connected with the first semiconductor layer 201 through the first layer N metal 503. Similarly, the second electrode 602 penetrates through the insulating reflective layer 401, and the second surface of the second electrode 602 contacts the first P-metal layer 504 to realize electrical connection, so that the second electrode 602 can be electrically connected to the second semiconductor layer 203 through the first P-metal layer 504 and the current spreading layer 500.
In this embodiment, the material of the first electrode 601 and the second electrode 602 may be at least two metals selected from gold (Au), tin (Sn), nickel (Ni), silver (Ag) and copper (Cu).
As can be seen from fig. 30, the first surfaces of the first electrode 601 and the second electrode 602 are bonded to the second surface of the flexible wiring wafer 002 as the electrode surfaces.
Fig. 19 to 29 are schematic structural views showing respective steps of a method for manufacturing an LED chip light source of a flip-chip structure according to the present embodiment. Next, a method of manufacturing the LED chip light source will be described in detail with reference to fig. 19 to 29.
Referring to fig. 19, step S100 is performed to provide a substrate 100, and an LED functional layer of a flip-chip structure is formed on the substrate 100.
Next, how to form the LED functional layer of the flip-chip structure will be described.
With continued reference to fig. 19, an epitaxial layer 200 is formed on the substrate 100, where the epitaxial layer 200 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 sequentially disposed from bottom to top.
The substrate 100 and the epitaxial layer 200 are formed by, for example: a pattern is etched on the substrate 100 using a standard photolithography process, and then the substrate 100 is etched using ICP (inductively coupled plasma) to pattern the substrate 100, for improving luminous efficiency. Further, the epitaxial layer 200 may be fabricated on the substrate 100 by any one of epitaxial techniques such as metal chemical vapor deposition, laser-assisted molecular beam epitaxy, hydride vapor phase epitaxy, evaporation, etc., and the epitaxial layer 200 may be a polycrystalline structure or a single crystal structure.
Referring to fig. 20, the epitaxial layer 200 is partially etched to form a recess 200a, and the recess 200a penetrates the second semiconductor layer 203 and the light emitting layer 202 and extends into the first semiconductor layer 201. Specifically, the step of forming the recess 200a includes: and (3) manufacturing a light-emitting area (MESA) graph through a photoetching process, etching the epitaxial layer 200 by using ICP to form the groove 200a, wherein the etching depth is required to exceed the light-emitting layer 202, and exposing the first semiconductor layer 201, and etching a platform (MESA) from the side to form an MESA step, wherein the MESA step comprises an upper step surface and a lower step surface, the upper step surface is the second semiconductor layer 203, the lower step surface is the first semiconductor layer 201, and the upper step surface and the lower step surface are connected to form the side of the MESA step.
Referring to fig. 21, a current blocking layer 300 is formed on the second semiconductor layer 203. The forming step of the current blocking layer may be: a current blocking material (not shown in fig. 21) is fully deposited by a deposition process, then a mask is made using a photoresist, and then a portion of the current blocking material and the mask are removed by an etching process, a photoresist removing process, and a portion of the current blocking material on the second semiconductor layer 203 is remained, and the remaining current blocking material constitutes the current blocking layer 300.
Referring to fig. 22, a current spreading layer 500 is formed on the second semiconductor layer 203. The step of forming the current spreading layer 500 includes: a current spreading material (not shown in fig. 22) is fully deposited by a deposition process, then a mask is made by using a photoresist, and then a part of the current spreading material and the mask are removed by using an etching process and a photoresist removing process, so that a part of the current spreading material on the second semiconductor layer 203 and all of the current spreading material on the current blocking layer 300 remain, and the remaining current spreading material constitutes the current spreading layer 500.
Referring to fig. 23, two first metals, i.e., a first N metal 503 and a first P metal 504, are formed on the recess 200a and the current spreading layer 500, respectively. The step of forming the first layer N metal 503 and the first layer P metal 504 may be: a patterned photoresist layer is formed on the current spreading layer 500, the patterned photoresist layer defines patterns to be formed of the first layer N metal 503 and the first layer P metal 504, then a first layer of electrode material is formed through a process such as sputtering, finally the patterned photoresist is stripped, and simultaneously the first layer of electrode material on the patterned photoresist is removed, and the remaining first layer of electrode material can form the first layer N metal 503 and the first layer P metal 504.
Referring to fig. 24, an evaporation-plated insulating reflective layer 401 is deposited on the second semiconductor layer 203, and the insulating reflective layer 401 fills the recess 200a and extends to cover the second semiconductor layer 203.
Referring to fig. 25, the insulating reflective layer 401 is etched to form a fourth opening 403 and a fifth opening 404, and the fourth opening 403 and the fifth opening 404 penetrate the insulating reflective layer 401 and expose the first surfaces of the first layer of N metal 503 and the first layer of P metal 504, respectively.
Referring to fig. 26, the fourth opening 403 and the fifth opening 404 are filled with a conductive material, and the conductive material further extends to cover the first surface of the insulating reflective layer 401. Then etching is performed to remove a portion of the conductive material on the first surface of the insulating reflective layer 401, the conductive material in the fourth opening 403 and a portion of the conductive material on the first surface of the insulating reflective layer 401 form the first electrode 601, the conductive material in the fifth opening 404 and the remaining conductive material on the first surface of the insulating reflective layer 401 form the second electrode 602, and the first electrode 601 and the second electrode 602 form an electrode group.
Referring to fig. 27, step S200 is performed to bond the LED wafer 004 composed of the substrate 100 and the LED functional layer of the flip-chip structure to the flexible wiring wafer 002, and the electrode surface of the LED functional layer is attached to the second surface of the flexible wiring wafer 002. That is, after the LED wafer 004 is turned over, the first surfaces of the first electrode 601 and the second electrode 602 are bonded to the metal wiring layer of the flexible wiring wafer 002.
Referring to fig. 28, step S300 is performed to remove the substrate 100 by a laser lift-off process or a polishing process, and coarsen the first semiconductor layer 201 of the LED functional layer by an alkaline solution to increase the light extraction efficiency.
Referring to fig. 29, the first semiconductor layer 201 is etched to form a scribe line 700 penetrating the first semiconductor layer 201.
With continued reference to fig. 29, step S400 is performed to separate the flexible wiring wafer 002 from the supporting wafer 001 and remove the adhesive layer 003.
Referring to fig. 30, the flexible wiring wafer 002 is bent such that the insulating reflective layer 401 is broken from the scribe line 700, so that the chip regions of the LED wafer are thoroughly separated. Next, the flexible wiring wafer 002 is cut into a predetermined shape and size along the scribe line 700 to form a plurality of LED chip light sources including at least one of the chip regions, and the cut flexible wiring wafer 002 constitutes a flexible substrate 012 of the LED chip light sources.
Example III
The difference between the first embodiment and the second embodiment is that in this embodiment, the LED chip light source is a LED chip light source with a vertical structure, and the LED functional layer is an LED functional layer with a vertical structure.
Fig. 39 is a schematic structural diagram of an LED chip light source provided in this embodiment, and fig. 34 is a schematic structural diagram of a portion of LED functional layers with a vertical structure provided in this embodiment. As shown in fig. 34 and 39, in the present embodiment, the LED functional layer of the vertical structure includes an epitaxial layer 200, a reflector layer 405, a metal protection layer 406, a first insulating protection layer 304, a second insulating protection layer 305, and an electrode group.
Referring to fig. 34, specifically, the mirror layer 405 is formed on the first surface of the epitaxial layer 200 and covers a portion of the first surface of the second semiconductor layer 203, and the mirror layer 405 is used to reflect the light emitted from the epitaxial layer 200 and directed to the flexible substrate 012. The mirror layer 405 is a mirror made of silver (Ag), platinum (Pt), tungsten (W), titanium (Ti), aluminum (Al), ITO, or the like, and has a thickness of typically 0.1um to 2um.
With continued reference to fig. 34 and 39, the metal protection layer 406 is disposed on the epitaxial layer 200 and covers a portion of the first surface of the second semiconductor layer 203 and the first surface of the mirror layer 405, and the metal protection layer 406 is used to protect the mirror layer 405 from leakage caused by migration of materials in the mirror layer 405. The material of the metal protection layer 406 is one or more of Ti, pt, au, al, ni, cr and other metals, and the thickness is 0.5um-3 um.
The first insulating protection layer 304 is formed on the first surface of the epitaxial layer 200 and covers the remaining first surface of the second semiconductor layer 203 and a part of the first surface of the metal protection layer 406; the second insulating protection layer 305 is formed on the second surface of the first semiconductor layer 201, and covers the second surface of the first semiconductor layer 201 and the side surface of the epitaxial layer 200, and at the same time, the second insulating protection layer 305 also covers the exposed second surface of the flexible wiring wafer 002.
The first insulating protective layer 304 and the second insulating protective layer 305 are both SiO 2 Layer, siN x Layer, siO 2 /SiN x And the thickness of the first insulating protection layer 304 is 0.01um to 10um.
As shown in connection with fig. 39, the electrode group includes a first electrode 601 and a second electrode 602. The first electrode 601 is located on the second surface of the second insulating protection layer 305, and one end of the first electrode passes through the second insulating protection layer 305 to be electrically connected with the first semiconductor layer 201, and the other end passes through the second insulating protection layer 305 to be electrically connected with the flexible wiring wafer 002; the second electrode 602 is formed on the first surface of the first insulating protection layer 304 and is in contact with the metal protection layer 406 through the first insulating protection layer 304, and the second electrode 602 is electrically connected to the second semiconductor layer 203 through the metal protection layer 406 and the mirror layer 405.
The materials of the first electrode 601 and the second electrode 602 may be AuSn, niSn, snAgCu or other metal materials that can be used for bonding, and the thicknesses of the first electrode 601 and the second electrode 602 are 0.5um to 10um.
As can be seen from fig. 39, the first surfaces of the first electrode 601 and the second electrode 602 are bonded to the second surface of the flexible wiring wafer 002 as the electrode surfaces.
Fig. 31 to 39 are schematic structural diagrams corresponding to the corresponding steps of the method for manufacturing a vertical-structure LED chip light source according to the present embodiment. Next, a method for manufacturing the LED chip light source of the vertical structure provided in this embodiment will be described in detail with reference to fig. 31 to 39.
Referring to fig. 31, step S100 is performed to provide the substrate 100 and form the epitaxial layer 200 on the substrate 100, where the epitaxial layer 200 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 sequentially disposed from bottom to top.
Referring to fig. 32, a mirror layer 405 is formed on the epitaxial layer 200. The method of forming the mirror layer 405 may be: a mask pattern is formed by a negative photoresist lithography process, a mirror film with high reflectivity is grown by processes such as electron beam evaporation, sputtering, ALD (Atomic layer deposition ) and the like, and finally the mask and the mirror film on the mask are removed by lift off and the like, and the remaining mirror film constitutes the mirror layer 405.
With continued reference to fig. 32, the metal protection layer 406 is formed on a portion of the first surface of the epitaxial layer 200 and the mirror layer 405. The method for forming the metal protection layer 406 may be: a mask pattern is formed by a negative photoresist lithography process, a metal film is grown by processes such as electron beam evaporation, sputtering, ALD (Atomic layer deposition ) and the like, and finally the mask and the metal film on the mask are removed by a lift off method and the like, and the remaining metal film forms the metal protection layer 406.
Referring to fig. 33, the first insulating protection layer 304 is formed on the remaining first surface of the epitaxial layer 200 and the metal protection layer 406, and the first insulating protection layer 304 may isolate the epitaxial layer 200 and the metal protection layer 406 from the outside, so as to protect the epitaxial layer 200 and the metal protection layer 406.
Therefore, after forming the first insulating protection layer 304, an etching process may be performed to remove a portion of the first insulating protection layer 304 so as to expose at least a portion of the first surface of the metal protection layer 406.
Referring to fig. 34, the second electrode 602 is formed on the exposed first surface of the metal protection layer 406, and the second electrode 602 is electrically connected to the second semiconductor layer 203 through the metal protection layer 406 and the mirror layer 405. In this embodiment, the second electrode 602 further extends to cover a portion of the first surface of the first insulating protection layer 304. The step of forming the second electrode 602 may be: a metal material is prepared on the exposed first surface of the metal protection layer 406 using photolithography and an electron beam evaporation process, thereby forming the second electrode 602.
Referring to fig. 35, step S200 is performed to bond the LED wafer composed of the substrate 100 and the LED functional layer of the vertical structure to the flexible wiring wafer 002. That is, the LED wafer is bonded to the flexible wiring wafer 002 after being flipped over, and the first surface of the second electrode 602 is bonded to the metal wiring layer of the flexible wiring wafer 002.
Referring to fig. 36, step S300 is performed to remove the substrate 100 by a laser lift-off process or a polishing process, and roughen the first semiconductor layer 201 by an alkaline solution to increase the light extraction efficiency.
With continued reference to fig. 36, the entire epitaxial layer 200 is etched to form through scribe lines 700 in the epitaxial layer 200, and then the flexible wiring wafer 002 is bent such that the first insulating protection layer 304 breaks from the scribe lines 700.
Alternatively, the scribe line 700 may be formed by etching the epitaxial layer 200 and the first insulating protective layer 304 in steps, thereby forming the scribe line 700 penetrating the epitaxial layer 200 and the first insulating protective layer 304.
Referring to fig. 37, a second insulating protection layer 305 is deposited over the entire surface, and the second insulating protection layer 305 covers all exposed surfaces of the epitaxial layer 200, all exposed surfaces of the first insulating protection layer 304, and the second surface of the flexible wiring wafer 002.
Referring to fig. 38, the second insulating protection layer 305 is etched to form an opening exposing a portion of the second surface of the first semiconductor layer 201 and an opening exposing a portion of the second surface of the flexible wiring wafer 002, wherein the opening exposing a portion of the second surface of the first semiconductor layer 201 is located on the first semiconductor layer 201, and the opening exposing a portion of the second surface of the flexible wiring wafer 002 is located in the scribe line 700. Then, a first electrode 601 is formed on a portion of the second surface of the second insulating protection layer 305, and the first electrode 601 further fills the opening exposing a portion of the second surface of the first semiconductor layer 201 and the opening exposing a portion of the second surface of the flexible wiring wafer 002, so that the first electrode 601 can electrically connect the first semiconductor layer 201 and the metal wiring layer of the flexible wiring wafer 002.
Referring to fig. 39, step S400 is performed to separate the flexible wiring wafer 002 from the supporting wafer 001 and remove the adhesive layer 003.
With continued reference to fig. 39, the flexible wiring wafer 002 is bent such that the second insulating protective layer 305 breaks from the scribe line 700, allowing the die area of the LED wafer to be thoroughly separated. Next, the flexible wiring wafer 002 is cut into a predetermined shape and size along the breaking portion of the second insulating protective layer 305, so as to form a plurality of LED chip light sources including at least one of the chip regions, and the cut flexible wiring wafer 002 forms a flexible substrate 012 of the LED chip light sources.
The above embodiments are merely illustrative of several structures of the LED functional layer, and it should be understood that the LED functional layer in the present invention is not limited thereto and is applicable to all LED functional layers of flip-chip structure or vertical structure.
In summary, in the LED chip light source and the method for manufacturing the same provided in the present embodiment, after an LED wafer is formed, the LED wafer is bonded to a flexible wiring wafer by using a wafer level bonding process, so that an LED functional layer of the LED wafer is attached to a second surface of the flexible wiring wafer, and then a single chip area is defined by removing a substrate of the LED wafer and forming a scribe line in the LED functional layer; the flexible wiring wafer can be cut into preset shapes and sizes along the scribing grooves to form a plurality of LED chip light sources comprising at least one chip area, the LED chip light sources with various shapes and sizes can be prepared, the cut flexible wiring wafer forms a flexible substrate of the LED chip light sources, each LED chip light source is flexible and easy to bend and fold, the problems of high reject ratio, low efficiency, high repair rate, high cost and the like caused by transferring the prepared LED chips onto a flexible circuit substrate are avoided, and the flexible display screen is prepared by using Mini/Micro LED chips. Furthermore, the luminance of the unit area of the flexible LED chip light source provided by the invention is several times higher than that of the OLED, and the flexible LED chip light source can be used as a large-size screen, and has the advantages of small light attenuation, no screen burning, long service life and low cost.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art may make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention within the scope of the technical solution without departing from the invention, and the technical solution is not departing from the scope of the invention.
Claims (45)
1. The preparation method of the LED chip light source is characterized by comprising the following steps of:
providing a substrate, forming an LED functional layer on the substrate, wherein the substrate and the LED functional layer form an LED wafer;
bonding the LED wafer to a flexible wiring wafer, and attaching the LED functional layer to a second surface of the flexible wiring wafer;
removing the substrate and forming a scribing groove in the LED functional layer to define a single chip area; the method comprises the steps of,
cutting the flexible wiring wafer into a preset shape and size along the scribing groove to form a plurality of LED chip light sources comprising at least one chip area, wherein the cut flexible wiring wafer forms a flexible substrate of the LED chip light sources;
The second surface of the flexible wiring wafer is provided with a metal wiring layer, the metal wiring layer comprises a plurality of wiring areas, at least one metal wire is arranged in each wiring area, after the LED wafer is bonded to the flexible wiring wafer, one chip area is aligned to one wiring area, and electrodes corresponding to each chip area are respectively and electrically connected with the metal wires of the corresponding wiring area;
the LED functional layer comprises a plurality of electrode groups, each electrode group comprises two mutually insulated electrodes, the two electrodes are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer of the LED functional layer, the materials of the electrodes are all bond metal materials, and all the electrodes are utilized to bond the LED wafer to the flexible wiring wafer.
2. The method of manufacturing an LED chip light source of claim 1, wherein the number of the chip regions included in the LED chip light source is the same or different.
3. The method of manufacturing a LED chip light source of claim 1, wherein the LED chip light sources are identical or different in shape.
4. The method of manufacturing a LED chip light source of claim 1, wherein the LED chip light sources are the same or different in size.
5. The method for manufacturing an LED chip light source according to claim 1, wherein the LED functional layer is an LED functional layer of a flip-chip structure, and the LED chip light source is an LED chip light source of a flip-chip structure.
6. The method of manufacturing a light source of an LED chip of claim 5, wherein the functional layer of the LED in flip-chip configuration comprises an epitaxial layer, a recess, and a reflector layer; the step of forming the LED functional layer of the flip-chip structure on the substrate comprises the following steps:
forming the epitaxial layer on the substrate, wherein the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged on the substrate;
etching the epitaxial layer to form the recess extending from the first surface of the second semiconductor layer into the first semiconductor layer;
forming the mirror layer on a portion of the first surface of the second semiconductor layer; the method comprises the steps of,
the electrode group is formed on the mirror layer.
7. The method of manufacturing a light source of an LED chip of claim 6, wherein the functional layer of an LED in flip-chip configuration further comprises a first insulating layer and a first opening; after forming the grooves and before forming the reflector layer, the step of forming the LED functional layer of the flip-chip structure further comprises:
Forming a first insulating layer on the second semiconductor layer and on the inner wall of the groove, wherein the first insulating layer is provided with a first opening, one part of the first opening exposes part of the first semiconductor layer at the bottom of the groove, and the other part of the first opening exposes part of the second semiconductor layer; the method comprises the steps of,
the mirror layer is formed in the first opening exposing a portion of the second semiconductor layer when the mirror layer is formed.
8. The method of manufacturing a light source of an LED chip of claim 7, wherein the LED functional layer of the flip-chip structure further comprises a current spreading layer and a connection metal layer; after forming the reflector layer and before forming the electrode group, the step of forming the LED functional layer of the flip-chip structure further includes:
forming the current spreading layer on the reflector layer, wherein the current spreading layer is electrically connected with the second semiconductor layer through the reflector layer;
forming the connection metal layer on the current expansion layer and in the groove, wherein the connection metal layer is electrically connected with the first semiconductor layer, and the connection metal layer and the current expansion layer are electrically isolated from each other; the method comprises the steps of,
One of the two electrodes is electrically connected with the second semiconductor layer through the current expansion layer, and the other electrode is electrically connected with the first semiconductor layer through the connecting metal layer.
9. The method of manufacturing a light source of an LED chip of claim 8, wherein the LED functional layer of the flip-chip structure further comprises a second insulating layer and a second opening; after the current expansion layer is formed, before the connection metal layer is formed, the step of forming the LED functional layer of the flip-chip structure further comprises:
forming the second insulating layer on the first insulating layer and the current expansion layer, wherein the second insulating layer is provided with the second opening, a part of the second opening is communicated with a part of the first opening to expose a part of the first semiconductor layer, and the other part of the second opening exposes a part of the current expansion layer; the method comprises the steps of,
and when the connecting metal layer is formed, forming the connecting metal layer on the second insulating layer and filling the communicated first opening and the communicated second opening.
10. The method of manufacturing a light source of an LED chip of claim 9, wherein the functional layer of an LED in flip-chip configuration further comprises a third insulating layer and a third opening; after forming the connection metal layer and before forming the electrode group, the step of forming the LED functional layer of the flip-chip structure further includes:
And forming a third insulating layer on the second insulating layer and the connecting metal layer, wherein the third insulating layer is provided with a third opening, one part of the third opening is communicated with one part of the second opening to expose part of the current expansion layer, and the other part of the third opening exposes part of the connecting metal layer.
11. The method of claim 10, wherein two electrodes are formed on the third insulating layer, and one electrode fills the second opening and the third opening, which are connected to each other, so as to be electrically connected to the current spreading layer; the other electrode fills the rest of the third opening so as to be electrically connected with the connecting metal layer.
12. The method of manufacturing a LED chip light source of claim 11, wherein the first semiconductor layer is etched to form the scribe line penetrating the first semiconductor layer, and the flexible wiring wafer is bent to fracture the first, second and third insulating layers from the scribe line before cutting the flexible wiring wafer along the scribe line.
13. The method of manufacturing a light source of an LED chip of claim 5, wherein the functional layer of the LED in flip-chip configuration comprises an epitaxial layer, a recess, and an insulating reflective layer; the step of forming the LED functional layer of the flip-chip structure on the substrate comprises the following steps:
Forming the epitaxial layer on the substrate, wherein the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged on the substrate;
etching the epitaxial layer to form the recess extending from the first surface of the second semiconductor layer into the first semiconductor layer;
forming the insulating reflection layer on the second semiconductor layer, wherein the groove is filled with the insulating reflection layer; the method comprises the steps of,
the electrode groups are formed on the insulating reflecting layer, and two electrodes of each electrode group penetrate through the insulating reflecting layer and are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer.
14. The method of manufacturing a LED chip light source of claim 13, wherein the flip-chip LED functional layer further comprises two first layers of metal; the step of forming the LED functional layer of the flip-chip structure before forming the insulating reflective layer on the second semiconductor layer further includes:
forming a first layer of metal on the first semiconductor layer and the second semiconductor layer at the bottom of the groove respectively, wherein the two first layers of metal are electrically connected with the first semiconductor layer and the second semiconductor layer respectively; the method comprises the steps of,
After the electrode group is formed on the insulating reflecting layer, both the electrodes pass through the insulating reflecting layer and are electrically connected with one first layer metal respectively.
15. The method of manufacturing a light source of an LED chip of claim 14, wherein the LED functional layer of the flip-chip structure further comprises a current blocking layer and a current spreading layer; the step of forming the LED functional layer of the flip-chip structure further includes, before forming the first metal layer:
forming the current blocking layer on a portion of the first surface of the second semiconductor layer; and
the current spreading layer is formed on at least part of the first surface of the second semiconductor layer and the current blocking layer.
16. The method of manufacturing a LED chip light source of claim 13, wherein the first semiconductor layer is etched to form the scribe line through the first semiconductor layer, and the flexible wiring wafer is bent to fracture the insulating reflective layer from the scribe line before the flexible wiring wafer is cut along the scribe line.
17. The method for manufacturing an LED chip light source according to claim 1, wherein the LED functional layer is a LED functional layer of a vertical structure, and the LED chip light source is an LED chip light source of a vertical structure.
18. The method of manufacturing a LED chip light source of claim 17, wherein the LED functional layer of vertical structure comprises an epitaxial layer, a reflector layer and two insulating protective layers; the step of forming the LED functional layer of the vertical structure on the substrate comprises the following steps:
forming the epitaxial layer on the substrate, wherein the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged on the substrate;
forming the mirror layer on a portion of the first surface of the second semiconductor layer;
forming a first insulating protection layer on the second semiconductor layer and on the mirror layer;
forming one electrode of the electrode group on the first insulating protection layer, wherein the one electrode penetrates through the first insulating protection layer and is electrically connected with the second semiconductor layer;
forming a second insulating protection layer on the first semiconductor layer and the second surface of the flexible wiring wafer after forming the scribe line in the LED functional layer; the method comprises the steps of,
and forming another electrode in the electrode group on the second insulating protection layer, wherein one end of the other electrode penetrates through the second insulating protection layer to be electrically connected with the first semiconductor layer, and the other end of the other electrode extends into the scribing groove and penetrates through the second insulating protection layer at the bottom of the scribing groove to be electrically connected with the flexible wiring wafer.
19. The method of manufacturing a LED chip light source of claim 18, wherein the LED functional layer of vertical structure further comprises a metal protective layer; after forming the reflector layer and before forming the first insulating protection layer, the step of forming the LED functional layer of the vertical structure further includes:
the metal protection layer is formed on at least part of the first surface of the second semiconductor layer and the reflector layer.
20. The method of claim 18, wherein the epitaxial layer and the first insulating protective layer are etched to form the scribe line penetrating the epitaxial layer and the first insulating protective layer; or etching the epitaxial layer to form the scribing groove penetrating through the epitaxial layer, and then bending the first insulating protection layer to fracture the first insulating protection layer from the scribing groove; the method comprises the steps of,
and bending the flexible wiring wafer before cutting the flexible wiring wafer along the scribing groove so as to break the second insulating protection layer from the scribing groove.
21. The method of claim 1, wherein the bonding metal material comprises at least two of gold, tin, nickel, silver, and copper.
22. The method of manufacturing a LED chip light source of claim 1, further comprising, prior to bonding the LED wafer to the flexible wiring wafer:
fixing the flexible wiring wafer on a supporting wafer; the method comprises the steps of,
the flexible wiring wafer is separated from the support wafer prior to trimming the flexible wiring wafer.
23. The method of manufacturing an LED chip light source of claim 22, wherein the step of securing the flexible wiring wafer to the support wafer comprises:
forming an adhesive layer on the supporting wafer, and fixing the flexible wiring wafer on the supporting wafer through the adhesive layer; when the material of the bonding layer is a metal material, removing the supporting wafer and the bonding layer by adopting a grinding process so as to separate the flexible wiring wafer from the supporting wafer; and when the material of the bonding layer is an organic adhesive material, decomposing the bonding layer by adopting an organic cleaning solvent so as to separate the flexible wiring wafer from the supporting wafer.
24. The method of claim 22, wherein the thickness of the support wafer is greater than or equal to 250 μm.
25. The method of claim 22, wherein the support wafer is a silicon-containing wafer or a sapphire wafer.
26. The method of claim 22, wherein the first surface of the flexible wiring wafer is fixed to the support wafer and the LED functional layer is bonded to the second surface of the flexible wiring wafer.
27. The method for manufacturing the LED chip light source according to claim 1, wherein the material of the flexible wiring wafer is flexible glass, silica gel or epoxy resin or flexible high molecular polymer containing silicon oxide.
28. The method of manufacturing a LED chip light source of claim 1, wherein the substrate is removed using a laser lift-off process or a grinding process.
29. The method of manufacturing an LED chip light source of claim 1 or 28, further comprising, after removing the substrate:
and coarsening the second surface of the first semiconductor layer of the LED functional layer by adopting alkaline solution.
30. An LED chip light source produced by the production method of an LED chip light source according to any one of claims 1 to 29, comprising:
The flexible substrate is provided with a preset shape and a preset size, and is formed by cutting a flexible wiring wafer; the method comprises the steps of,
the LED functional layer is provided with an electrode surface, is positioned on the flexible substrate and is attached to the flexible substrate, and comprises at least one chip area;
the second surface of the flexible substrate is provided with a metal wiring layer, the electrode surface is attached to the second surface of the flexible substrate, the metal wiring layer comprises at least one wiring area, at least one metal wire is arranged in each wiring area, one chip area is aligned to one wiring area, and the electrode corresponding to each chip area is electrically connected with the metal wire of the corresponding wiring area.
31. The LED chip light source of claim 30, wherein the LED chip light source is a flip-chip LED chip light source and the LED functional layer is a flip-chip LED functional layer.
32. The LED chip light source of claim 31, wherein the flip-chip structured LED functional layer comprises:
the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged from top to bottom;
A recess in the epitaxial layer extending from the first surface of the second semiconductor layer into the first semiconductor layer;
a mirror layer formed on the first surface of the second semiconductor layer and covering a portion of the second semiconductor layer; the method comprises the steps of,
the electrode group is formed on the first surface of the reflector layer and comprises two mutually insulated electrodes, the two electrodes are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer, and the first surface of the electrode is the electrode surface.
33. The LED chip light source of claim 32, wherein the flip-chip structured LED functional layer further comprises:
the current expansion layer is formed on the first surface of the reflector layer and is electrically connected with the second semiconductor layer through the reflector layer;
the connecting metal layer is formed on the first surface of the current expansion layer and fills the groove so as to be electrically connected with the first semiconductor layer, and the connecting metal layer and the current expansion layer are electrically isolated from each other; the method comprises the steps of,
one of the two electrodes is electrically connected with the second semiconductor layer through the current expansion layer, and the other electrode is electrically connected with the first semiconductor layer through the connecting metal layer.
34. The LED chip light source of claim 33, wherein the flip-chip structured LED functional layer further comprises:
the first insulating layer is formed on the first surface of the second semiconductor layer and covers the inner wall of the groove, the first insulating layer is provided with a first opening, one part of the first opening exposes part of the first semiconductor layer at the bottom of the groove, the other part of the first opening exposes part of the second semiconductor layer, and the reflector layer is positioned in the first opening exposing part of the second semiconductor layer.
35. The LED chip light source of claim 34, wherein the flip-chip structured LED functional layer further comprises:
the second insulating layer is formed on the first insulating layer and the first surface of the current expansion layer to electrically isolate the current expansion layer from the connecting metal layer, wherein the second insulating layer is provided with a second opening, one part of the second opening is communicated with one part of the first opening to expose part of the first semiconductor layer, and the other part of the second opening exposes part of the current expansion layer.
36. The LED chip light source of claim 35, wherein the connection metal layer is formed on the first surface of the second insulating layer and fills the first opening and the second opening that are in communication to electrically connect with the first semiconductor layer.
37. The LED chip light source of claim 35, wherein the flip-chip structured LED functional layer further comprises:
and the third insulating layer is formed on the first surfaces of the second insulating layer and the connecting metal layer so as to electrically isolate the two electrodes, wherein the third insulating layer is provided with a third opening, one part of the third opening is communicated with one part of the second opening to expose part of the current expansion layer, and the other part of the third opening exposes part of the connecting metal layer.
38. The LED chip light source of claim 37, wherein two of the electrodes are located on the first surface of the third insulating layer, and one of the electrodes fills the second opening and the third opening in communication to electrically connect with the current spreading layer; the other electrode fills the rest of the third opening so as to be electrically connected with the connecting metal layer.
39. The LED chip light source of claim 31, wherein the flip-chip structured LED functional layer comprises:
the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged from top to bottom;
A recess extending from the first surface of the second semiconductor layer into the first semiconductor layer;
an insulating reflection layer formed on the first surface of the second semiconductor layer and filling the groove; the method comprises the steps of,
the electrode groups are formed on the first surface of the insulating reflecting layer, each electrode group comprises two mutually insulated electrodes, the two electrodes penetrate through the insulating reflecting layer and are respectively and electrically connected with the first semiconductor layer and the second semiconductor layer, and the first surface of each electrode is the electrode surface.
40. The LED chip light source of claim 39, wherein the flip-chip LED functional layer further comprises:
two first-layer metals respectively formed on the first surfaces of the first semiconductor layer and the second semiconductor layer at the bottom of the groove, wherein the two first-layer metals are respectively electrically connected with the first semiconductor layer and the second semiconductor layer; the method comprises the steps of,
both the electrodes pass through the insulating reflecting layer and are respectively and electrically connected with one first layer metal.
41. The LED chip light source of claim 40, wherein the flip-chip LED functional layer further comprises:
A current blocking layer formed on a portion of the first surface of the second semiconductor layer; and
and the current expansion layer is formed on at least part of the first surface of the second semiconductor layer and the first surface of the current blocking layer.
42. The LED chip light source of claim 30, wherein the LED chip light source is a vertically structured LED chip light source and the LED functional layer is a vertically structured LED functional layer.
43. An LED chip light source as recited in claim 42, wherein the vertically structured LED functional layer comprises:
the epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged from top to bottom;
a mirror layer formed on a portion of the first surface of the second semiconductor layer;
two insulating protection layers, wherein a first insulating protection layer is formed on the second semiconductor layer and the first surface of the reflector layer, and a second insulating protection layer is formed on the second surface of the first semiconductor layer and the exposed second surface of the flexible wiring wafer;
the electrode groups are formed on the first surface of the first insulating protection layer, and penetrate through the first insulating protection layer to be electrically connected with the second semiconductor layer, the other electrode in the electrode groups is formed on the second surface of the second insulating protection layer, two ends of the electrode groups penetrate through the second insulating protection layer to be electrically connected with the first semiconductor layer and the flexible wiring wafer respectively, and the first surfaces of the electrode groups are the electrode surfaces.
44. The LED chip light source of claim 43, wherein the LED functional layer of the vertical structure further comprises:
and the metal protection layer is formed on at least part of the first surface of the second semiconductor layer and the first surface of the reflector layer.
45. The LED chip light source of claim 30, wherein the flexible substrate is made of flexible glass, silicone or epoxy or a flexible high molecular polymer containing silicon oxide.
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| CN114512592A (en) * | 2022-02-17 | 2022-05-17 | 厦门乾照光电股份有限公司 | Flip LED chip and preparation method thereof, LED packaging body and display device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101084583A (en) * | 2004-10-22 | 2007-12-05 | 首尔Opto仪器股份有限公司 | Gan compound semiconductor light emitting element and method of manufacturing the same |
| CN105098048A (en) * | 2015-06-19 | 2015-11-25 | 佛山市国星半导体技术有限公司 | Light-emitting diode (LED) chip and manufacturing method thereof |
| CN109768134A (en) * | 2019-01-28 | 2019-05-17 | 华引芯（武汉）科技有限公司 | A kind of luminous high efficiency reversion vertical structure high-voltage chip and preparation method thereof |
| CN212277221U (en) * | 2020-07-10 | 2021-01-01 | 厦门士兰明镓化合物半导体有限公司 | Flip chip |
| CN112201738A (en) * | 2020-11-03 | 2021-01-08 | 厦门士兰明镓化合物半导体有限公司 | Preparation method of flip LED chip |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102317874B1 (en) * | 2017-02-09 | 2021-10-28 | 삼성디스플레이 주식회사 | Display device and manufacturing method of the same |
| US20210013367A1 (en) * | 2019-04-04 | 2021-01-14 | Bor-Jen Wu | System and Method for Making Micro LED Display |
-
2021
- 2021-09-09 CN CN202111057859.2A patent/CN113764456B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101084583A (en) * | 2004-10-22 | 2007-12-05 | 首尔Opto仪器股份有限公司 | Gan compound semiconductor light emitting element and method of manufacturing the same |
| CN105098048A (en) * | 2015-06-19 | 2015-11-25 | 佛山市国星半导体技术有限公司 | Light-emitting diode (LED) chip and manufacturing method thereof |
| CN109768134A (en) * | 2019-01-28 | 2019-05-17 | 华引芯（武汉）科技有限公司 | A kind of luminous high efficiency reversion vertical structure high-voltage chip and preparation method thereof |
| CN212277221U (en) * | 2020-07-10 | 2021-01-01 | 厦门士兰明镓化合物半导体有限公司 | Flip chip |
| CN112201738A (en) * | 2020-11-03 | 2021-01-08 | 厦门士兰明镓化合物半导体有限公司 | Preparation method of flip LED chip |
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