CN113595047A - Passive clamping circuit for online measurement of conduction voltage drop of power transistor - Google Patents
Passive clamping circuit for online measurement of conduction voltage drop of power transistor Download PDFInfo
- Publication number
- CN113595047A CN113595047A CN202110959310.6A CN202110959310A CN113595047A CN 113595047 A CN113595047 A CN 113595047A CN 202110959310 A CN202110959310 A CN 202110959310A CN 113595047 A CN113595047 A CN 113595047A
- Authority
- CN
- China
- Prior art keywords
- voltage
- diode
- power transistor
- tested
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 title abstract description 22
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 17
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a passive clamping circuit for measuring the conduction voltage drop of a power transistor on line, which comprises a resistor R and a release diode D, wherein the resistor R and the release diode D are used for bearing high voltagefVoltage-dividing diode D1…DnA voltage stabilizing diode Dz. When the transistor to be tested is turned off, the resistor R bears the high turn-off voltage, and the voltage at the two ends of the output A, B is maintained by the voltage stabilizing diode DzThe determined clamping voltage value; when the transistor to be tested is turned on, the voltage at the two ends of the output A, B passes through the release diode D from the clamping voltage valuefAnd reducing the voltage to the conduction voltage drop of the transistor to be tested. Voltage dividing diode R in circuit of the invention1…RnThe equivalent capacitance value in the loop can be reduced, the release time is shortened, and the measurement precision can be improved. The circuit provided by the invention has the advantages of simple structure, good dynamic performance and high measurement precision.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to measurement of conduction voltage drop of a power transistor.
Background
With the development of multi-electric and all-electric airplanes, the electricity consumption of the airplanes is continuously increased, and the number of airborne power electronic equipment is increased, so that higher requirements are provided for the reliability, maintainability and testability of an airborne power electronic conversion device. The conduction voltage drop as an important sign of bond wire breakage inside the power transistor has become an important characteristic parameter for monitoring the degradation of the power transistor. However, with the development of power electronic technology, a power transistor with high voltage resistance and low on-resistance has made higher requirements for on-line testing of on-state voltage drop.
The power transistor works normally, the voltage at two ends of the power transistor is in an alternating state, and when the power transistor to be tested is conducted, the voltage at two ends of the power transistor to be tested is lower (can reach below 1V); when the power transistor to be tested is turned off, the voltage across the power transistor tends to be high (up to hundreds of volts). To measure the voltage waveform across the power transistor, the measurement range of the measurement device (generally referred to as a voltage measurement device) must be designed to be wide enough to measure the voltages of both on and off levels simultaneously, otherwise, the amplifier inside the measurement device may be saturated, and if there is not enough recovery time, the measurement accuracy of the on-state voltage drop may be affected. For example, if the voltage across the transistor ranges from 0.1V to 400V, an eight bit analog to digital conversion provides 28The eight bit analog to digital conversion can provide a resolution of 400/256-1.56V for 256 quantization levels, while measuring a voltage of 0.1V at a resolution of 1.56V, with apparently no confidence. This problem is exacerbated by the lower on-resistance and higher voltage stress that develops with GaN devices. Therefore, measurement of devices with wide bandgap requires higher resolution and faster measurement speed.
Disclosure of Invention
The invention aims to provide a technical support for the reliability research of a power transistor, provides a circuit capable of clamping a higher voltage to a lower voltage when the power transistor to be tested is switched off, and realizes the measurement of the voltages at two ends of the power transistor in a smaller voltage range, thereby ensuring the measurement precision of the conduction voltage drop of the power transistor to be tested.
The technical scheme provided by the invention is as follows:
a passive clamp circuit for on-line measurement of power transistor conduction voltage drop comprises a resistor R and a diode DfDiode D1…DnA voltage stabilizing diode DzWherein, the diode DfThe cathode of the resistor R and one end of the resistor R are simultaneously connected with the drain D of the power transistor to be tested and the diode DfThe anode of (2) is the same as the other end of the resistor RTime-connected diode D1Anode of (2), diode D1Cathode of (D) is connected with a diode2…, diode resistance Dn-1Cathode of (D) is connected with a diodenAnode of (2), diode DnCathode of the diode is connected with a voltage stabilizing diode DzCathode of (2), zener diode DzAnode of the power transistor to be tested is connected with a source S and a diode D of the power transistor to be tested1The anode of the diode is an anode output end A and a voltage stabilizing diode DzThe anode of (2) is a negative output terminal B, and the output terminal A, B is respectively connected with the positive and negative electrodes of the voltage measuring device.
Preferably, a diode DfIs a high voltage diode, diode D1…DnIs a low voltage diode.
The working principle of the circuit is described as follows:
when the power transistor to be tested is conducted, the voltage V of the output end at the momentABComprises the following steps:
VAB＝VDS(on)-RIleak (1)
wherein VDS(on)For the power transistor to be tested to conduct voltage drop, IleakFor this purpose, the magnitude of the current flowing through the resistor R is equal to the magnitude of the current flowing through the diode D1～DnAnd a zener diode DZThe current of the branches is equal. To reduce VABAnd VDS(on)The invention proposes to reduce the error between the two diodes by connecting a plurality of diodes D in series1,…,DnTo reduce Ileak。
Voltage stabilizing diode D to be testedZWhen the switch is turned off, the voltage at two ends of the switch is high voltage of hundreds of volts, and the invention utilizes a voltage stabilizing diode DZClamp the output voltage across A, B to:
wherein VDnIs a diode DnThe conduction voltage drop of (2) is usually about 0.7V, VDZThe voltage stabilizing diode is determined according to the selected voltage stabilizing diode, and 4-5V is generally selected. Thus, the circuit of the present invention canThe off hundreds of volts is clamped from high to low.
The voltage clamping circuit for online measurement of the conduction voltage drop of the transistor has the following outstanding advantages:
1) the circuit of the invention utilizes the resistor R to block the high voltage when the transistor to be tested is switched off, and utilizes the voltage regulator tube to clamp the high voltage when the transistor to be tested is switched off to a specified low voltage level, so that the output voltage range is from zero volt to several volts, thereby ensuring that the measurement of the conduction voltage drop of the transistor to be tested can be realized.
2) The invention utilizes a plurality of diodes D connected in series1,…,DnThe current flowing through the resistor R when the transistor to be measured is switched on is reduced, and the measurement precision is improved.
3) The invention utilizes a plurality of diodes D connected in series1,…,DnTo reduce D1～DZThe equivalent capacitance of the branch circuit improves the dynamic performance of the circuit.
Drawings
FIG. 1 is a schematic diagram of the circuit configuration of the present invention;
d is the drain of the transistor to be tested, S is the source of the transistor to be tested, R is the resistor for cutting off high voltage, DfIs a diode, D, for quick release1…DnIs a diode, D, for improving measurement accuracy and dynamic performancezThe voltage stabilizing diode is used for clamping, A is the anode of the output end, and B is the cathode of the output end.
FIG. 2 is a schematic diagram of a circuit configuration for measuring BUCK circuits using the circuit of the present invention;
d is the drain of the transistor to be tested, S is the source of the transistor to be tested, G is the gate of the transistor to be tested, R is the resistor for cutting off high voltage, DfIs a diode, D, for quick release1And D2Is a diode, D, for improving measurement accuracy and dynamic performancezIs a voltage stabilizing diode for clamping, A is the positive pole of the output end, B is the negative pole of the output end, VinIs the steady state value of the input stream power supply voltage, L, of the BUCK circuitfIs the output filter inductance of BUCK circuit, Dx is the fly-wheel diode of BUCK circuit, RLIs the output DC load resistance, C, of the BUCK circuitfIs the output filter capacitor of the BUCK circuit.
Fig. 3(a), (b) are schematic diagrams showing the measurement results of the on-state voltage drop of the power transistor in the BUCK circuit by using the circuit of the invention.
Detailed Description
The invention is described in further detail below with reference to specific embodiments and with reference to the following figures: the embodiment is implemented on the premise of the technical scheme of the invention, and the implementation mode and the operation process are given, but the protection scope of the invention is not limited to the implementation described below.
FIG. 1 is a schematic diagram of the circuit structure of the present invention, in which the passive clamp circuit includes a resistor R and a diode DfDiode D1-DnA voltage stabilizing diode Dz(ii) a Wherein, the diode DfThe cathode of the resistor R and one end of the resistor R are simultaneously connected with the drain D of the power transistor to be tested and the diode DfThe anode of the resistor R and the other end of the resistor R are simultaneously connected with a diode D1The anode of (1); diode DiCathode of (D) is connected with a diodei+11,2, …, n-1; diode DnCathode of the diode is connected with a voltage stabilizing diode DzCathode of (2), zener diode DzAnode of the power transistor to be tested is connected with a source S and a diode D of the power transistor to be tested1The anode of the diode is an anode output end A and a voltage stabilizing diode DzThe anode of the voltage measuring device is a cathode output end B, the anode output end A is connected with the anode of the voltage measuring device, and the cathode output end B is connected with the cathode of the voltage measuring device.
In order to illustrate the correctness and feasibility of the invention, simulation verification is carried out on one BUCK circuit. The connection of the circuit shown in fig. 1 to the BUCK circuit is shown in fig. 2. The simulation parameters are as follows: BUCK input DC power supply voltage steady state value Vin100V, filter inductance Lf200 muH, output filter capacitance Cf500 muF, DC load resistance RL10 Ω, drive voltage vgThe amplitude of (2) is 15V and the switching frequency is 100 kHz. The invention provides 2k omega, and two voltage dividing diodes D are used1And D2Diode D for voltage regulationZThe voltage stabilization parameter is 4.3V.
FIGS. 3(a) and 3(b) are specific simulation experimental waveforms of this embodiment, showing the drain-source voltage V of the MOSFET in the BUCK circuitDSAnd the output voltage V after passing through the circuit of the inventionABThe waveform of (2). FIG. 3(a) shows VDSAnd VABThe global waveform of the voltage V shows that the voltage V with higher level at the turn-off stage of the MOSFET to be testedDSVoltage V clamped to a lower level by the inventive circuitABAnd the voltage spike does not exist, the RC time delay does not exist, and the dynamic performance is good. Fig. 3(b) shows the local waveform of the conduction voltage drop, and it can be seen that the output of the present invention almost completely matches the actual conduction voltage drop, and the error is very small. Therefore, the circuit can clamp the voltage with higher voltage level to the voltage with lower level, thereby realizing the accurate measurement of the conduction voltage drop.
Claims (2)
1. The passive clamp circuit for measuring the conduction voltage drop of the power transistor on line is characterized by comprising a resistor R and a diode DfDiode D1-DnA voltage stabilizing diode Dz；
Wherein, the diode DfThe cathode of the resistor R and one end of the resistor R are simultaneously connected with the drain D of the power transistor to be tested and the diode DfThe anode of the resistor R and the other end of the resistor R are simultaneously connected with a diode D1The anode of (1); diode DiCathode of (D) is connected with a diodei+11,2, …, n-1; diode DnCathode of the diode is connected with a voltage stabilizing diode DzCathode of (2), zener diode DzAnode of the power transistor to be tested is connected with a source S and a diode D of the power transistor to be tested1The anode of the diode is an anode output end A and a voltage stabilizing diode DzThe anode of the voltage measuring device is a cathode output end B, the anode output end A is connected with the anode of the voltage measuring device, and the cathode output end B is connected with the cathode of the voltage measuring device.
2. The voltage clamping circuit of claim 1, wherein: diode DfIs a high voltage diode, diode D1-DnBeing low-voltage diodes。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110959310.6A CN113595047A (en) | 2021-08-20 | 2021-08-20 | Passive clamping circuit for online measurement of conduction voltage drop of power transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110959310.6A CN113595047A (en) | 2021-08-20 | 2021-08-20 | Passive clamping circuit for online measurement of conduction voltage drop of power transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113595047A true CN113595047A (en) | 2021-11-02 |
Family
ID=78238768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110959310.6A Pending CN113595047A (en) | 2021-08-20 | 2021-08-20 | Passive clamping circuit for online measurement of conduction voltage drop of power transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113595047A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114167252A (en) * | 2021-12-01 | 2022-03-11 | 中南大学 | Conduction voltage drop measuring circuit of semiconductor device |
| CN114729958A (en) * | 2022-03-03 | 2022-07-08 | 英诺赛科(苏州)半导体有限公司 | Apparatus and method for measuring dynamic on-resistance of nitride-based switching device |
| CN115201651A (en) * | 2022-07-13 | 2022-10-18 | 河北工业大学 | On-state voltage drop on-line monitoring circuit and device for power device |
| CN116008769A (en) * | 2023-03-24 | 2023-04-25 | 杭州飞仕得科技股份有限公司 | Self-driven power semiconductor conduction voltage drop detection circuit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500616A (en) * | 1995-01-13 | 1996-03-19 | Ixys Corporation | Overvoltage clamp and desaturation detection circuit |
| CN101277058A (en) * | 2008-02-28 | 2008-10-01 | 艾默生网络能源有限公司 | Secondary time-delay soft start circuit of DC/DC convertor |
| CN101355293A (en) * | 2007-07-24 | 2009-01-28 | 青岛海信电器股份有限公司 | Soft startup circuit for power supply |
| CN105610142A (en) * | 2016-02-04 | 2016-05-25 | 北京康斯特仪表科技股份有限公司 | High voltage-resistant protective circuit for low-voltage measurement circuit |
| CN207150417U (en) * | 2017-08-24 | 2018-03-27 | 厦门玛司特电子工业有限公司 | A kind of Switching Power Supply that protection circuit is absorbed containing MOSFET pipes and its clamper |
| CN111337808A (en) * | 2019-05-13 | 2020-06-26 | 上海交通大学 | Online measuring circuit and system for conduction voltage drop of power semiconductor device |
-
2021
- 2021-08-20 CN CN202110959310.6A patent/CN113595047A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500616A (en) * | 1995-01-13 | 1996-03-19 | Ixys Corporation | Overvoltage clamp and desaturation detection circuit |
| CN101355293A (en) * | 2007-07-24 | 2009-01-28 | 青岛海信电器股份有限公司 | Soft startup circuit for power supply |
| CN101277058A (en) * | 2008-02-28 | 2008-10-01 | 艾默生网络能源有限公司 | Secondary time-delay soft start circuit of DC/DC convertor |
| CN105610142A (en) * | 2016-02-04 | 2016-05-25 | 北京康斯特仪表科技股份有限公司 | High voltage-resistant protective circuit for low-voltage measurement circuit |
| CN207150417U (en) * | 2017-08-24 | 2018-03-27 | 厦门玛司特电子工业有限公司 | A kind of Switching Power Supply that protection circuit is absorbed containing MOSFET pipes and its clamper |
| CN111337808A (en) * | 2019-05-13 | 2020-06-26 | 上海交通大学 | Online measuring circuit and system for conduction voltage drop of power semiconductor device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114167252A (en) * | 2021-12-01 | 2022-03-11 | 中南大学 | Conduction voltage drop measuring circuit of semiconductor device |
| CN114729958A (en) * | 2022-03-03 | 2022-07-08 | 英诺赛科(苏州)半导体有限公司 | Apparatus and method for measuring dynamic on-resistance of nitride-based switching device |
| WO2023164900A1 (en) * | 2022-03-03 | 2023-09-07 | Innoscience (suzhou) Semiconductor Co., Ltd. | Apparatus and method for measuring dynamic on-resistance of nitride-based switching device |
| CN114729958B (en) * | 2022-03-03 | 2024-01-02 | 英诺赛科(苏州)半导体有限公司 | Apparatus and method for measuring dynamic on-resistance of nitride-based switching device |
| CN115201651A (en) * | 2022-07-13 | 2022-10-18 | 河北工业大学 | On-state voltage drop on-line monitoring circuit and device for power device |
| CN116008769A (en) * | 2023-03-24 | 2023-04-25 | 杭州飞仕得科技股份有限公司 | Self-driven power semiconductor conduction voltage drop detection circuit |
| CN116008769B (en) * | 2023-03-24 | 2023-06-27 | 杭州飞仕得科技股份有限公司 | Self-driven power semiconductor conduction voltage drop detection circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113595047A (en) | Passive clamping circuit for online measurement of conduction voltage drop of power transistor | |
| CN111337808B (en) | On-line measuring circuit and system for conduction voltage drop of power semiconductor device | |
| CN105811765B (en) | A kind of voltage clamp circuit for on-line measurement power transistor conduction voltage drop | |
| CN111426928B (en) | Dynamic resistance test circuit for gallium nitride device | |
| CN111337807B (en) | High-frequency high-voltage dynamic on-resistance test circuit and measurement method of switching device | |
| CN114720769A (en) | Dynamic characteristic measuring device and method for wide-bandgap power semiconductor field effect transistor | |
| CN113252987A (en) | Dynamic resistance test circuit of GaN HEMT power device | |
| JP2021032827A (en) | Device and method for testing power semiconductor | |
| Rossetto et al. | A fast on-state voltage measurement circuit for power devices characterization | |
| CN212008817U (en) | Active MOSFET voltage clamping circuit and double-pulse test circuit | |
| US11175332B2 (en) | Method for measurement of current-voltage characteristics | |
| CN109752638B (en) | Device and method for continuously measuring output curve of IGBT (insulated Gate Bipolar transistor) chip | |
| CN116203373B (en) | Multifunctional semiconductor field effect transistor test circuit and method | |
| Meng et al. | A highly precise on-state voltage measurement circuit with dual current sources for online operation of sic mosfets | |
| CN115453305A (en) | Voltage clamping circuit and application thereof | |
| Kozarik et al. | Development of a device for on-die double-pulse testing and measurement of dynamic on-resistance of GaN HEMTs | |
| US12085600B1 (en) | Non-invasive online monitoring circuit for on-state saturation voltage of power semiconductor | |
| CN115389900B (en) | Surge current testing circuit based on SiC MOSFET and charging and discharging method | |
| CN117434410A (en) | Power device conduction voltage drop online measurement circuit easy to expand | |
| Du et al. | Implications of short-circuit degradation on the aging process in accelerated cycling tests of SiC MOSFETs | |
| CN115605769B (en) | Apparatus for measuring dynamic on-resistance of nitride-based semiconductor device | |
| CN116359701B (en) | Testing circuit and method for gallium nitride device | |
| CN218917514U (en) | Test circuit for equivalent output capacitance of power semiconductor device | |
| Schmitz et al. | Robustness Analysis of Temperature-Sensitive Electrical Parameters of IGBTs | |
| US10741546B2 (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211102 |