CN113314515B

CN113314515B - Semiconductor circuit and method for manufacturing semiconductor circuit

Info

Publication number: CN113314515B
Application number: CN202110642252.4A
Authority: CN
Inventors: 王敏; 左安超; 谢荣才
Original assignee: Guangdong Huixin Semiconductor Co Ltd
Current assignee: Guangdong Huixin Semiconductor Co Ltd
Priority date: 2021-06-09
Filing date: 2021-06-09
Publication date: 2024-09-27
Anticipated expiration: 2041-06-09
Also published as: CN113314515A

Abstract

The invention relates to a semiconductor circuit and a preparation method of the semiconductor circuit, wherein an electric connection wire group is bent between a first substrate and a second substrate, a first surface of the second substrate is close to the first substrate, a second surface of the second substrate is exposed out of a sealing body, the MCU chip is integrated outside the semiconductor circuit, and an IC control circuit with low heat dissipation requirement is arranged on the first surface of the second substrate, so that the MCU chip is arranged on the second surface of the second substrate, and the MCU chip and the IC control circuit are separated by only one thickness of the second substrate, thereby greatly shortening the signal transmission distance. Thereby realizing zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, the strong current and weak current are separated in the same semiconductor circuit, so that the anti-interference capability of the whole semiconductor circuit is improved, the electronic control is miniaturized, the wiring is more flexible, the cost is low, the product volume is further reduced, and in addition, the MCU chip is convenient to replace and disassemble.

Description

Semiconductor circuit and method for manufacturing semiconductor circuit

Technical Field

The invention relates to a semiconductor circuit and a preparation method of the semiconductor circuit, and belongs to the technical field of power semiconductor devices.

Background

Semiconductor circuits are a type of power driven product that combine power electronics and integrated circuit technology. The semiconductor circuit integrates the power switch device and the high-voltage driving circuit, and is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat. The semiconductor circuit receives control signals of the CPU or the DSP on one hand, drives the subsequent circuit to work, and sends state detection signals of the system back to the CPU or the DSP for processing on the other hand. Compared with the traditional discrete scheme, the semiconductor circuit gains larger and larger markets with the advantages of high integration level, high reliability and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for frequency conversion speed regulation, metallurgical machinery, electric traction, servo driving and frequency conversion household appliances. The semiconductor circuit is composed of a high-speed low-power-consumption die and an optimized gate-level driving circuit and a fast protection circuit. Even if a load accident or improper use occurs, the semiconductor circuit itself can be kept from being damaged. The semiconductor circuit generally uses an IGBT as a power switching element, and incorporates an integrated structure of a current sensor and a driving circuit. In the face of miniaturization and low cost competition in the market, higher requirements are put on high integration and high heat dissipation technology of semiconductor circuits.

In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the existing semiconductor circuit lays out a strong current module consisting of a low-voltage control circuit and a high-voltage power device on the same substrate, so that the whole semiconductor circuit is easy to cause poor anti-interference capability; in addition, the existing semiconductor circuit separates the strong current module composed of the low-voltage control circuit and the high-voltage power device on different boards, and has the defects of poor anti-interference capability, low integration degree, complex wiring and high cost caused by long transmission distance of control signals.

Disclosure of Invention

Based on the above, in the process of designing and preparing a semiconductor circuit, a strong current module consisting of a low-voltage control circuit and a high-voltage power device is necessarily laid out on the same substrate for the existing semiconductor circuit, which is easy to cause poor anti-interference capability of the whole semiconductor circuit; the high-voltage power device is characterized in that a high-voltage power device is arranged on a low-voltage power device, a low-voltage control circuit is arranged on a high-voltage power device, and a high-voltage power device is arranged on a high-voltage power device. A semiconductor circuit and a method of manufacturing the semiconductor circuit are provided.

Specifically, the present invention discloses a semiconductor circuit comprising:

a first substrate provided with a first insulating layer;

The circuit layer is arranged on the first insulating layer;

The first ends of the pins are respectively and electrically connected with the circuit layer;

the first end of the electric connection wire group is electrically connected with the circuit layer;

The first board surface of the second substrate is provided with an IC control circuit, and the IC control circuit is electrically connected with the second end of the electrical connection wire group; the second board surface of the second substrate is provided with a chip mounting area for mounting the MCU chip, the chip mounting area is provided with a plurality of electric connection pieces, each electric connection piece is used for being connected with each pin of the MCU chip in a one-to-one correspondence manner, each electric connection piece is respectively electrically connected with the second end of the electric connection wire group, and the IC control circuit is electrically connected with the corresponding electric connection piece;

The sealing body wraps the first substrate, the first plate surface of the second substrate provided with the IC control circuit and the circuit layer connected with the electric connection wire group and each pin;

the second ends of the pins are respectively led out from the first side surface of the sealing body; the electric connection wire group is bent and arranged between the first substrate and the second substrate, and the second plate surface of the second substrate is exposed from the sealing body.

Optionally, the IC control circuit includes a first circuit wiring layer, and a first circuit element disposed on the first circuit wiring layer; the first circuit wiring layer is arranged on the first plate surface of the second substrate.

Optionally, the IC control circuitry includes compressor control circuitry and/or fan control circuitry; the compressor control circuit includes a corresponding first circuit wiring and a corresponding first circuit element in the first circuit wiring layer; the fan control circuit includes respective first circuit wirings and respective first circuit elements in the first circuit wiring layer.

Optionally, the electrical connection line group includes a flat cable layer, a second insulating layer and a thin film layer; the second insulating layer is provided with a wire arrangement layer, the film layer covers the wire arrangement layer, the first end of the wire arrangement layer is connected to the circuit layer, and the second end of the wire arrangement layer is respectively connected to the IC control circuit and the corresponding electric connecting piece.

Optionally, a resistive-capacitive element is disposed near the second end of the electrical connection wire set, and the resistive-capacitive element is electrically connected to the bus layer.

Optionally, the circuit layer includes a second circuit wiring layer, and a second circuit element disposed on the second circuit wiring layer; the second circuit wiring layer is arranged on the first insulating layer.

Optionally, the circuit layer further includes a compressor inverter circuit and/or a fan inverter circuit, the compressor inverter circuit including corresponding second circuit wiring and second circuit elements in the second circuit wiring layer; the fan inverter circuit includes respective second circuit wirings and respective second circuit elements in the second circuit wiring layer.

Optionally, the circuit layer further comprises a PFC circuit and/or a rectifying circuit; the PFC circuit comprises corresponding second circuit wiring and second circuit elements in the second circuit wiring layer; the rectifying circuit includes respective second circuit wirings and respective second circuit elements in the second circuit wiring layer.

The invention also discloses a preparation method of the semiconductor circuit, which comprises the following steps:

providing a first substrate and a second substrate;

Preparing a first insulating layer on a first substrate;

Preparing a circuit layer on the first insulating layer;

preparing an IC control circuit on a first plate surface of a second substrate, wherein the second plate surface of the second substrate is provided with a chip mounting area for mounting an MCU chip, each electric connecting piece is prepared in the chip mounting area, the second substrate is provided with a via hole, and the IC control circuit is connected with the corresponding electric connecting piece through a first metal wire penetrating through the via hole;

the circuit layer is provided with an electric connection wire group and a plurality of pins, the first ends of the electric connection wire group are electrically connected with the circuit layer, and the first ends of the pins are respectively connected with the circuit layer through second metal wires;

Bending the electric connection line group, and respectively connecting the IC control circuit and each electric connection piece at the second end of the electric connection line group so that the second substrate is positioned right above the first substrate;

Injection molding is carried out on a first substrate provided with a circuit layer, a plurality of pins and an electric connection wire group and a first panel provided with a second substrate of an IC control circuit through a packaging die to form a sealing body, second ends of the plurality of pins are respectively led out from a first side surface of the sealing body, and a second panel provided with a chip mounting area is exposed from a second side surface of the sealing body;

and placing the MCU chip in the chip mounting area, and welding each pin of the MCU chip and each electric connecting piece in a one-to-one correspondence manner to form a semiconductor circuit.

Optionally, the preparation steps of the electrical connection wire set include:

providing a metal sheet;

preparing a flat cable layer on a metal sheet;

covering a second insulating layer on the first surface of the flat cable layer;

Covering a thin film layer on a second surface of the second insulating layer opposite to the first surface; the first end of the flat cable layer is connected to the circuit layer, and the second end of the flat cable layer is respectively connected to the IC control circuit and the corresponding electrical connector.

One of the above technical solutions has the following advantages and beneficial effects:

In the embodiments of the semiconductor circuit, the first insulating layer is disposed on the first substrate, the circuit layer is disposed on the first insulating layer, the first ends of the plurality of pins are respectively electrically connected to the circuit layer, and the first ends of the electrical connection wire set are electrically connected to the circuit layer; the first board surface of the second substrate is provided with an IC control circuit, and the IC control circuit is electrically connected with the second end of the electrical connection wire group; the second board surface of the second substrate is provided with a chip mounting area for mounting the MCU chip, the chip mounting area is provided with a plurality of electric connection pieces, each electric connection piece is used for being connected with each pin of the MCU chip in a one-to-one correspondence manner, each electric connection piece is respectively electrically connected with the second end of the electric connection wire group, and the IC control circuit is electrically connected with the corresponding electric connection piece; the first substrate, a first plate surface of a second substrate provided with an IC control circuit and a circuit layer connected with an electrical connection wire group and pins are wrapped by the sealing body, and second ends of the pins are led out from the first side surface of the sealing body respectively; the electric connection wire group is bent and arranged between the first substrate and the second substrate, the second plate surface of the second substrate is exposed from the sealing body, the MCU chip is integrated outside the semiconductor circuit (the second side surface), the MCU chip is arranged on the second plate surface of the second substrate through the IC control circuit with low heat dissipation requirement, and the MCU chip is arranged on the second plate surface of the second substrate, so that the MCU chip and the IC control circuit are separated by only one thickness of the second substrate, and the signal transmission distance is greatly shortened. Thereby realizing zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, the strong current and weak current are separated in the same semiconductor circuit, so that the anti-interference capability of the whole semiconductor circuit is improved, the electronic control is miniaturized, the wiring is more flexible, the cost is low, and the product volume is further reduced; in addition, when the semiconductor circuit fails, the MCU chip integrated outside the module can be independently taken out, so that the utilization rate of components is improved, and failure analysis is facilitated; when the MCU chip fails, the MCU chip can be replaced to remove the failure, so that the maintenance cost is reduced, and the reliability of the product is improved.

Drawings

Fig. 1 is a diagram showing the external shape of a conventional semiconductor circuit;

FIG. 2 is a schematic diagram of a first semi-finished product of a semiconductor circuit according to an embodiment of the present invention;

FIG. 3 is a cross-sectional view taken along the X-X' direction of FIG. 1;

FIG. 4 is a schematic diagram of a second semi-finished product of a semiconductor circuit according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of an internal finished product of a semiconductor circuit according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of the external structure of a semiconductor circuit without an MCU chip according to an embodiment of the present invention;

FIG. 7 is a schematic diagram showing the external structure of a semiconductor circuit equipped with an MCU chip according to an embodiment of the present invention;

FIG. 8 is a flowchart illustrating steps for fabricating a semiconductor circuit according to an embodiment of the present invention;

fig. 9 is a flowchart illustrating a process for fabricating an electrical connection line group of a semiconductor circuit according to an embodiment of the present invention.

Reference numerals:

The semiconductor circuit 10, the first substrate 100, the first insulating layer 200, the circuit layer 300, the compressor inverter circuit 310, the fan inverter circuit 320, the pfc circuit 330, the rectifying circuit 340, the ic control circuit 400, the compressor control circuit 410, the fan control circuit 420, the resistor-capacitor 430, the pins 500, the electrical connection wire group 600, the second insulating layer 610, the flat cable layer 620, the thin film layer 630, the second substrate 700, the chip mounting region 710, the sealing body 800, the electrical connection member 900, the mcu chip 910.

Detailed Description

In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.

In addition, in the case where the structure or the function is not conflicting, the embodiments of the present invention and the features in the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.

In a conventional semiconductor circuit, as shown in fig. 1, the semiconductor circuit includes an MCU chip, pins and a package, and the MCU chip is packaged inside the package. When the MCU chip breaks down, the MCU chip is difficult to detach in the package body, and even if the MCU chip is forcibly detached, the whole semiconductor circuit is damaged, so that the whole semiconductor circuit is scrapped, the maintenance cost is increased, and the resource is wasted; in addition, the MCU chip is integrated into the semiconductor circuit, the MCU chip is required to be subjected to secondary packaging, the reliability of the product is affected, wiring is complex, and cost is high. In the conventional semiconductor circuit without the integrated MCU chip, the signal transmission distance between the semiconductor circuit and the MCU chip is longer, so that the anti-interference capability of the whole system is poor, and the integration degree is low. The semiconductor circuit lays out a strong current module consisting of a low-voltage control circuit and a high-voltage power device on the same substrate, so that the whole semiconductor circuit is easy to have poor anti-interference capability; if the strong current modules consisting of the low-voltage control circuit and the high-voltage power device are separated on different boards, the transmission distance of control signals is long, so that the anti-interference capability of the whole system is poor, the integration degree is low, the wiring is complex, and the cost is high.

In order to overcome the above-mentioned problems of the conventional semiconductor circuit, in one embodiment, as shown in fig. 2-7, the present invention proposes a semiconductor circuit 10, wherein the semiconductor circuit 10 comprises a first substrate 100, a circuit layer 300, a plurality of pins 500, an electrical connection wire set 600, a second substrate 700 and a sealing body 800. A first insulating layer 200 is disposed on the first substrate 100; the circuit layer 300 is disposed on the first insulating layer 200; the first ends of the plurality of pins 500 are electrically connected with the circuit layer 300 respectively; the first end of the electrical connection wire set 600 is electrically connected to the circuit layer 300; the first board surface of the second substrate 700 is provided with an IC control circuit 400, and the IC control circuit 400 is electrically connected with the second end of the electrical connection line set 600; the second board surface of the second substrate 700 is provided with a chip mounting area 710 for mounting the MCU chip 910, the chip mounting area 710 is provided with a plurality of electrical connectors 900, each electrical connector 900 is used for being connected with each pin 500 of the MCU chip 910 in a one-to-one correspondence manner, each electrical connector 900 is electrically connected with the second end of the electrical connection wire set 600, and the IC control circuit 400 is electrically connected with the corresponding electrical connector 900; the sealing body 800 wraps the first substrate 100, the first board surface of the second substrate 700 provided with the IC control circuit 400, and the circuit layer 300 connected with the electrical connection wire group 600 and each pin 500; wherein, the second ends of the pins 500 are respectively led out from the first side surface of the sealing body 800; the electrical connection wire set 600 is bent between the first substrate 100 and the second substrate 700, and the second surface of the second substrate 700 is exposed from the sealing body 800.

The first substrate 100 may be used for carrying a high voltage driving circuit and corresponding components of the entire semiconductor circuit 10. The first substrate 100 may be made of a metal material, such as a rectangular plate made of aluminum of 1100, 5052 or the like, and has a thickness substantially greater than that of other layers, typically 0.8mm to 2mm, and a thickness generally 1.5mm, so as to mainly achieve heat conduction and heat dissipation effects on components such as a power device. For another example, the first substrate 100 may be made of other metal materials with good thermal conductivity, for example, rectangular plate material made of copper. The shape of the first substrate 100 of the present application is not limited to a rectangular shape, and may be a circular shape, a trapezoid shape, or the like. The first insulating layer 200 may be used to prevent the circuit layer 300 from conducting electricity with the first substrate 100. The first insulating layer 200 is disposed on the surface of the first substrate 100, and has a thickness thinner than that of the first substrate 100, typically 50um to 150um, and typically 110um. The circuit layer 300 is disposed on the first insulating layer 200 such that the circuit layer 300 is insulated from the first substrate 100, and internal circuits such as a power switching device and a high voltage driving circuit are disposed on the circuit layer 300. The power switch device is electrically connected with the high-voltage driving circuit through a metal wire.

The second substrate 700 may be used for carrying low voltage circuits and corresponding components of the semiconductor circuit 10, for example, the first board surface of the second substrate 700 may be used for carrying the IC control circuit 400, and the second board surface of the second substrate 700 may be used for carrying the MCU chip 910, where the first board surface is opposite to the second board surface, the first board surface is disposed close to the first substrate 100, and the second board surface is disposed far away from the first substrate 100. The second substrate 700 may be made of a non-metallic material, for example, the second substrate 700 may be a rectangular glass fiber board (i.e., a glass fiber board), and the size of the second substrate 700 may be smaller than that of the first substrate 100, and the specific size may be determined according to the sizes of the IC control circuit 400 and the MCU layout. The shape of the second substrate 700 of the present application is not limited to a rectangular shape, and may be a circular shape, a trapezoid shape, or the like. The IC control circuit 400 may be configured to receive a control command of the MCU chip 910, and transmit a control signal to a corresponding high-voltage driving circuit on the first substrate 100 according to the control command; the IC control circuit 400 may also be used to feed back a response signal to the MCU chip 910. The IC control circuit 400 may include components such as an IC control chip and a corresponding peripheral capacitor resistor, and the IC control circuit 400 further includes metal wires for electrically connecting the components such as the IC control chip and the corresponding peripheral capacitor resistor. The second board surface of the second substrate 700 is provided with a chip mounting area 710, and the chip mounting area 710 is provided with a plurality of electrical connectors 900. Each electrical connector 900 may be used as a bonding site for the MCU chip 910, i.e., a pad (pad) for bonding with the MCU chip 910. The second substrate 700 is further provided with a via hole, and the electrical connection piece 900 on the second board surface can be connected with the IC control circuit 400 on the first board surface through the via hole, so as to realize connection between the MCU chip 910 and the IC control circuit 400. The MCU chip is a micro control unit, also called a single chip microcomputer or a single chip microcomputer, is a chip-level computer and is used for controlling different combinations for different application occasions. Its speed is high, and its program can be encrypted, but its processing power is limited, so that it is applicable to the control fields of high-integration, size and power consumption, etc..

The first end of the electrical connection wire set 600 is used for electrically connecting with corresponding circuit elements on the circuit layer 300, the second end of the electrical connection wire set 600 is used for electrically connecting with the IC control circuit 400, the second end of the electrical connection wire set 600 is also used for electrically connecting with each electrical connection piece 900, each electrical connection piece 900 is connected with each pin 500 of the MCU chip 910 in a one-to-one correspondence manner, that is, the connection relationship between the MCU chip 910 and the IC control circuit 400 is established through the electrical connection wire set 600 and the electrical connection piece 900, and the connection relationship between the MCU chip 910 and the IC control circuit 400 are respectively established with corresponding circuit elements on the circuit layer 300. The electrical connection wire set 600 may be a thin film wire assembly; further, the electrical connection wire set 600 is a bendable thin film circuit assembly, by disposing the IC control circuit 400 on the first board surface of the second substrate 700 and disposing the chip mounting region 710 on the second board surface of the second substrate 700, by disposing each electrical connection member 900 on the chip mounting region 710 on the second board surface of the second substrate 700, by bending the electrical connection wire set 600, the electrical connection between the first substrate 100 and the second substrate 700 is realized, and after the MCU chip 910 is soldered on the chip mounting region 710, the electrical connection between the MCU chip 910 and the IC control circuit 400 and the circuit layer 300 can be realized.

The pins 500 may be used to transmit signals to corresponding internal circuits on the first substrate 100 and to transmit signals output from the corresponding internal circuits on the circuit layer 300 to an external module; the pins 500 may also be used to transmit signals to the MCU chip 910 and the IC control circuit 400 on the second substrate 700, and to transmit signals output from the MCU chip 910 and the IC control circuit 400 on the second substrate 700 to an external module. The plurality of pins 500 may be divided into a plurality of low voltage pins 500 and a plurality of high voltage pins 500 according to the voltage level of the transmission signal. The low voltage pins 500 refer to pin 500 terminals for transmitting low voltage logic control signals, and are used for connecting the MCU chip 910 and the IC control circuit 400 on the second substrate 700, and the plurality of low voltage pins 500 are soldered to pads on the second substrate 700 by soldering, such as solder paste, so as to achieve electrical connection with the MCU chip 910 and the IC control circuit 400 on the second substrate 700. For example, the low voltage pin 500 may be electrically connected to the MCU chip 910 and the IC control circuit 400 on the second substrate 700 through a metal wire, wherein the metal wire may be a copper wire. The high voltage pin 500 refers to a pin 500 terminal for transmitting a high voltage power output signal for connecting to the circuit layer 300 on the first substrate 100; the plurality of high voltage pins 500 are soldered to the pads of the circuit layer 300 on the first substrate 100 by soldering, such as solder paste, so as to electrically connect with the circuit layer 300 on the first substrate 100. For example, the high voltage pin 500 may be electrically connected to the power switching device and the high voltage driving circuit on the circuit layer 300 through metal wires, respectively, wherein the metal wires may be copper wires.

The pin 500 can be made of C194 (-1/2H) plate (chemical components: cu (not less than 97.0), fe (2.4), P (0.03), zn (0.12)) or KFC (-1/2H) plate (chemical components: cu (not less than 99.6), fe (0.05-0.15) and P (0.03) (0.025-0.04)), and the C194 or KFC plate with the thickness of 0.5mm is processed by stamping or etching, and then nickel plating thickness is performed on the surface of 0.1-0.5um, and then tin plating thickness is performed on the surface of 2-5um; the extra connecting ribs of the pins 500400 are cut off and shaped into a required shape by a specific device.

After each pin 500 passes through the first side of the sealing body 800, each pin 500 is bent by a bending process to obtain a first bent end, and then the end of the first bent end is bent to obtain a second bent end. Wherein the first bent end may be parallel to the first substrate 100.

The sealing body 800 may be used for plastic packaging the first substrate 100 electrically connected with the plurality of pins 500 and the electrical connection wire groups 600 and the first board surface of the second substrate 700 provided with the IC control circuit 400, so that the first substrate 100, the first board surface of the second substrate 700 provided with the IC control circuit 400 and the circuit layer 300 connected with the electrical connection wire groups 600 and the pins 500 are wrapped in the sealing body 800, thereby protecting the internal circuit and the insulation and voltage resistance. In the process of manufacturing the sealing body 800, the first substrate 100 electrically connected with the plurality of pins 500 and the electrical connection wire set 600 may be encapsulated in the sealing body 800 by using an encapsulation mold through an encapsulation process. The material of the sealing body 800 may be a thermosetting polymer such as epoxy resin, phenolic resin, silica gel, amino, unsaturated resin; to improve heat dissipation, the sealing body 800 may be a composite material containing powder or fiber of metal, ceramic, silicon oxide, graphene, or the like. In one example, the material used for the sealing body 800 may be a molding compound prepared by mixing epoxy resin as a matrix resin, high-performance phenolic resin as a curing agent, silica powder and the like as a filler, and various additives.

The plastic package mold with different shapes can be designed according to different design requirements, and then the sealing body 800 with different shapes and structures can be obtained through plastic package. For example, the sealing body 800 may be a rectangular parallelepiped structure. The first substrate 100, the first board surface of the second substrate 700 provided with the IC control circuit 400, and the circuit layer 300 connected with the electrical connection wire group 600 and the pins 500 are wrapped by injection molding of thermoplastic resin or transfer molding of thermosetting resin to protect the sealing body 800, and the electrical connection pieces 900 on the second board surface of the second substrate 700 are exposed out of the sealing body 800, so that the corresponding pins 500 of the MCU chip 910 and the corresponding electrical connection pieces 900 can be soldered, and the chip mounting area 710 of the MCU chip 910 integrated on the second board surface of the second substrate 700 of the sealing body 800 can be realized, so that the electrical connection between the MCU chip 910 and the IC control circuit 400 and the circuit layer 300 can be realized.

Further, a plastic package mold for accommodating the chip mounting region 710 on the second surface of the second substrate 700 on the surface of the sealing body 800 can be obtained by designing, wherein in the preparation process, the first end of each pin 500 is electrically connected with the circuit layer 300, the IC control circuit 400 and the corresponding electrical connector 900, the first end of the electrical connection wire set 600 is electrically connected with the circuit layer 300, and the second end of the electrical connection wire set 600 is connected with the IC control circuit 400 and the corresponding electrical connector 900; then, the electrical connection wire set 600 is bent, so that the second substrate 700 is located right above the first substrate 100, the first board surface of the second substrate 700 is close to the first substrate 100, and the first substrate 100 electrically connected with the plurality of pins 500 and the electrical connection wire set 600 and the second board surface of the second substrate 700 electrically connected with the IC control circuit 400 are molded in the sealing body 800 by adopting a pre-designed molding die through a molding process, and meanwhile, each electrical connection piece 900 on the second board surface of the second substrate 700 is exposed out of the sealing body 800, so that the MCU chip 910 can be welded with each electrical connection piece 900, and the MCU chip 910 is integrated outside the semiconductor circuit 10.

In the above embodiment, the electrical connection wire set 600 is bent between the first substrate 100 and the second substrate 700, and the second surface of the second substrate 700 is exposed from the sealing body 800, so that the MCU chip 910 is integrated outside (the second side) the semiconductor circuit 10, and the MCU chip 910 is arranged on the second surface of the second substrate 700 by arranging the IC control circuit 400 with low heat dissipation requirement on the first surface of the second substrate 700, so that only one thickness of the second substrate 700 is provided between the MCU chip 910 and the IC control circuit, and the signal transmission distance is greatly shortened. Thereby realizing zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, the strong current and weak current are separated in the same semiconductor circuit 10, so that the anti-interference capability of the whole semiconductor circuit 10 is improved, the electronic control is miniaturized, the wiring is more flexible, the cost is low, and the product volume is further reduced; in addition, when the semiconductor circuit 10 fails, the MCU chip 910 integrated outside the module can be independently taken out, thereby improving the utilization rate of components and devices and facilitating failure analysis; when the MCU chip 910 fails, the MCU chip 910 can be replaced to remove the failure, so that the maintenance cost is reduced and the reliability of the product is improved.

In some embodiments of the present invention, as in fig. 3-5, an IC control circuit 400 includes a first circuit wiring layer, and a first circuit element disposed on the first circuit wiring layer; the first circuit wiring layer is disposed on the first surface of the second substrate 700.

The first circuit wiring layer is made of metal such as copper and insulated from the second substrate 700, and includes circuit lines made of etched copper foil, and the thickness of the circuit lines is also thin, for example, about 70 um. In one example, the first circuit routing layer further includes pads disposed near the side edges of the second substrate 700, which may be formed using 2 ounce copper foil. Finally, a thinner green oil layer can be coated on the first circuit wiring layer to play a role in line isolation and isolate the electric connection between the circuit lines. The first circuit elements are arranged on the first circuit wiring layer, and the first circuit elements or the first circuit elements and the first circuit wiring layer can be electrically connected through metal wires; the first circuit element may be fixed to the first circuit wiring layer by soldering. In one example, the first circuit element may include an IC control chip, and passive elements such as capacitors or resistors.

In some embodiments of the present invention, as in fig. 4-5, IC control circuit 400 includes a compressor control circuit 410 and/or a fan control circuit 420; the compressor control circuit 410 includes respective first circuit wirings and respective first circuit elements in the first circuit wiring layer; the blower control circuit 420 includes respective first circuit wires and respective first circuit elements in the first circuit wire layer.

Wherein the compressor may be, but is not limited to, an air conditioning compressor. The compressor control circuit 410 may be used to control on/off of the compressor, and in particular, the compressor control circuit 410 may control on/off of the compressor by controlling on/off of the compressor inverter circuit 310 on the first substrate 100. The fan may be, but is not limited to, an air conditioning fan. The fan control circuit 420 may be configured to control on/off of the fan, and in particular, the fan control circuit 420 may control on/off of the fan by controlling on/off of the fan inverter circuit 320 on the first substrate 100.

In particular, the compressor control circuit 410 and/or the blower control circuit 420 may be partitioned based on circuit implementation functionality, with first circuit elements and circuit wiring on the first circuit wiring layer. That is, the respective first circuit elements and circuit wiring included in the compressor control circuit 410 are capable of implementing the respective compressor control functions; the fan control circuit 420 includes respective first circuit elements and circuit wiring that enable respective fan control functions.

In one example, the IC control circuit 400 includes a compressor control circuit 410, where an IC control chip corresponding to the compressor control circuit 410 is mounted on a component mounting position corresponding to a first board surface of the second substrate 700 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the compressor control circuit 410 are mounted on a component mounting position corresponding to the first board surface of the second substrate 700 by an automatic SMT device; then, the whole semi-finished product is passed through a reflow oven to weld all components to corresponding installation positions, and the welding quality of the components is detected through visual inspection AOI equipment; the foreign matters such as flux and aluminum scraps remained on the first surface of the second substrate 700 are removed by cleaning means such as spraying and ultrasonic, so that the compressor control circuit 410 is mounted.

In one example, the IC control circuit 400 includes a fan control circuit 420, where an IC control chip corresponding to the fan control circuit 420 is mounted on a component mounting position corresponding to a first board surface of the second substrate 700 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the fan control circuit 420 are mounted on a component mounting position corresponding to the first board surface of the second substrate 700 by an automatic SMT device; then, the whole semi-finished product is passed through a reflow oven to weld all components to corresponding installation positions, and the welding quality of the components is detected through visual inspection AOI equipment; foreign matters such as soldering flux and aluminum scraps remained on the first plate surface of the second substrate 700 are removed by cleaning modes such as spraying and ultrasonic, so that the fan control circuit 420 is mounted.

It should be noted that in some embodiments, the IC control circuit 400 may also include both the compressor control circuit 410 and the fan control circuit 420.

In some embodiments of the present invention, as shown in fig. 3, the electrical connection line set 600 includes a flat cable layer 620, a second insulating layer 610, and a thin film layer 630; the second insulating layer 610 is provided with a wire-arranging layer 620, the film layer 630 covers the wire-arranging layer 620, and a first end of the wire-arranging layer 620 is connected to the circuit layer 300, and a second end of the wire-arranging layer 620 is respectively connected to the IC control circuit 400 and the corresponding electrical connector 900.

The flat cable layer 620 may include a plurality of metal wires arranged in a row, and the manufacturing process of the exclusion layer may be: the metal sheet is processed through a punching or etching process, and thus the flat cable 620 having a plurality of metal wire patterns can be obtained. In one example, the flat cable 620 may be integrally formed with the second circuit wiring layer on the circuit layer 300, i.e., the second circuit wiring layer and the flat cable 620 may be formed on the same copper foil layer. The second insulating layer 610 may be used to insulate individual metal lines on the bus layer 620. The second insulating layer 610 is disposed on the surface of the bus bar layer 620, and has a thickness thinner than that of the bus bar layer 620, for example, the thickness of the second insulating layer 610 may be the same as that of the first insulating layer 200. The thin film layer 630 can be used to prevent accidental short circuit between the metal wires on the flat cable layer 620 due to external environmental pollution, prevent oxidation of the metal wires on the flat cable layer 620, and prevent damage of the surface of the metal wires on the flat cable layer 620, and increase strength of the flat cable layer 620 when bending and folding, so that the flat cable layer 620 can bend a preset radian, the second substrate 700 connected to the second end of the flat cable layer 620 can be located right above the first substrate 100, the first board surface of the second substrate 700 is close to the first substrate 100, and the electrical connectors 900 on the second board surface of the second substrate 700 can expose the package body. Further, the film layer 630 is made of an insulating material, and may be in a paste or liquid form, and an insulating medium layer is formed on the surface of the flat cable layer 620 through a spraying or coating process, and then a film is formed by drying, and the film has a certain toughness and can be bent and folded; or a film-like insulating material is adhered to the flat cable layer 620 by applying an adhesive on the surface of the flat cable layer 620 and then naturally air-drying or heating and drying the same, thereby protecting the flat cable layer 620.

Further, after the flat cable 620 is prepared, the second insulating layer 610 is covered on the first side of the flat cable 620, and the thin film layer 630 is covered on the second side of the flat cable 620, so that the metal wires on the flat cable 620 are insulated from each other, and the bending and folding strength of the flat cable 620 is enhanced. Then, the first end of the flat cable 620 is connected to the circuit layer 300, and the second end of the flat cable 620 is connected to the IC control circuit 400 and the corresponding electrical connector 900, respectively; the flat cable layer 620 covered with the second insulating layer 610 and the thin film layer 630 is bent, so that the second substrate 700 is located right above the first substrate 100, the bent flat cable layer 620 is fixed by a corresponding carrier, and is put into a plastic package mold for packaging, so that each electrical connector 900 on the second board surface of the second substrate 700 is exposed out of the package body, and after the MCU chip 910 is mounted in the chip mounting area 710, the MCU chip 910 can be integrated outside (the second side surface) of the sealing body 800, and meanwhile, only one thickness of the second substrate 700 is separated between the MCU chip 910 and the IC control circuit, thereby greatly shortening the signal transmission distance. Thereby realizing the "zero distance" transmission of the control signal.

In some embodiments of the present invention, as shown in fig. 5, a resistor-capacitor 430 is disposed near the second end of the electrical connection line set 600, and the resistor-capacitor is electrically connected to the flat cable 620.

Wherein the resistive-capacitive element 430 may comprise a resistor and/or a capacitor. By disposing the resistive-capacitive element 430 at a position close to the second end of the electrical connection wire set 600, the volume of the second substrate 700 can be further reduced, and the bending of the electrical connection wire set 600 is not affected.

In some embodiments of the present invention, as in fig. 2-3, the circuit layer 300 includes a second circuit wiring layer (not shown), and a second circuit element disposed on the second circuit wiring layer; the second circuit wiring layer is provided on the first insulating layer 200.

The second circuit wiring layer is made of metal such as copper and insulated from the first substrate 100, and includes a circuit line made of etched copper foil, and the thickness of the circuit layer is also thin, for example, about 70 um. In one example, the second circuit routing layer further includes pads disposed proximate to the side edges of the first substrate 100, which may be formed using 2 ounce copper foil. Finally, a thinner green oil layer can be coated on the second circuit wiring layer to play a role in line isolation and isolate the electric connection between the circuit lines. A plurality of second circuit elements are arranged on the second circuit wiring layer, and the second circuit elements or the second circuit elements and the second circuit wiring layer can be electrically connected through metal wires; the second circuit element may be fixed to the second circuit wiring layer by soldering.

In one example, the second circuit element may employ an active element such as a transistor or diode, or a passive element such as a capacitor or resistor. Further, an element having a large heat generation amount such as a power element may be fixed to the first substrate 100 by a heat sink made of copper or the like. The first insulating layer 200 is formed to cover at least one surface of the first substrate 100. And the fillers such as alumina, silicon carbide and the like can be filled in the resin materials such as epoxy resin and the like for forming the sealing layer in high concentration to improve the heat conductivity, the fillers can be angular in order to improve the heat conductivity, and the fillers can be spherical in order to avoid the risk of damaging the surface of the circuit element.

In some embodiments of the invention, as in fig. 4, the circuit layer 300 further includes a compressor inverter circuit 310 and/or a fan inverter circuit 320, the compressor inverter circuit 310 including respective second circuit wiring and second circuit elements in the second circuit wiring layer; the fan inverter circuit 320 includes respective second circuit wirings and respective second circuit elements in the second circuit wiring layer.

The compressor inverter circuit 310 may convert the direct current into alternating current and supply the alternating current to the compressor according to the control of the compressor control circuit 410. The fan inverter circuit 320 may change the direct current into the alternating current according to the control of the fan control circuit 420 and supply the alternating current to the fan.

In one example, the circuit layer 300 includes a compressor inverter circuit 310, a device chip corresponding to the compressor inverter circuit 310 is mounted on a device mounting position corresponding to the circuit layer 300 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the compressor inverter circuit 310 are mounted on the device mounting position corresponding to the circuit layer 300 by an automatic SMT mounting device; then, the whole semi-finished product is passed through a reflow oven to weld all components to corresponding installation positions, and the welding quality of the components is detected through visual inspection AOI equipment; foreign matters such as soldering flux and aluminum scraps remained on the first substrate 100 are removed by cleaning methods such as spraying and ultrasonic, and the compressor inverter circuit 310 and the circuit wiring are connected by bonding wires, so that the compressor inverter circuit 310 is mounted. It should be noted that, the circuit layer 300 includes the compressor inverter circuit 310, and the corresponding IC control circuit 400 may include the compressor control circuit 410, so as to implement the two-in-one semiconductor circuit 10 integrating the compressor inverter circuit 310, the compressor control circuit 410 and the MCU chip 910.

In one example, the circuit layer 300 includes a fan inverter circuit 320, a device chip corresponding to the fan inverter circuit 320 is mounted on a device mounting position corresponding to the circuit layer 300 through solder paste brushing or silver paste dispensing, and a resistor and a capacitor corresponding to the fan inverter circuit 320 are mounted on the device mounting position corresponding to the circuit layer 300 through an automatic SMT mounting device; then, the whole semi-finished product is passed through a reflow oven to weld all components to corresponding installation positions, and the welding quality of the components is detected through visual inspection AOI equipment; cleaning the first substrate 100 of foreign matters such as flux and aluminum scraps by spraying, ultrasonic and other cleaning methods; the fan inverter circuit 320 is connected to the circuit wiring by bonding wires, so that the fan inverter circuit 320 is mounted. It should be noted that, the circuit layer 300 includes the fan inverter circuit 320, and the corresponding IC control circuit 400 may include the fan control circuit 420, so as to implement the two-in-one semiconductor circuit 10 integrating the fan inverter circuit 320, the fan control circuit 420 and the MCU chip 910.

It should be noted that the circuit layer 300 may also include both the compressor inverter circuit 310 and the fan inverter circuit 320, and the corresponding IC control circuit 400 may include both the compressor control circuit 410 and the fan control circuit 420. Based on the above-mentioned installation and preparation method of the compressor inverter circuit 310 and the installation and preparation method of the fan inverter circuit 320, the installation of the compressor inverter circuit 310 and the fan inverter circuit 320 can be realized, and the three-in-one semiconductor circuit 10 integrating the compressor inverter circuit 310, the fan inverter circuit 320, the compressor control circuit 410, the fan control circuit 420 and the MCU chip 910 is further realized.

In some embodiments of the present invention, as in fig. 4, the circuit layer 300 further includes PFC circuitry 330 and/or rectifying circuitry 340; the PFC circuit 330 includes respective second circuit wirings and second circuit elements in a second circuit wiring layer; the rectifier circuit 340 includes respective second circuit wirings and respective second circuit elements in the second circuit wiring layer.

Among other things, PFC (Power Factor Correction ) circuits may be used to increase the power factor of a device. It should be noted that the power factor refers to a relationship between the effective power and the total power consumption (apparent power), that is, a ratio of the effective power divided by the total power consumption (apparent power). The power factor may measure how effectively power is being utilized, and when the power factor value is greater, it represents a higher power utilization. The rectifier circuit 340 may be used to convert ac power to dc power. The rectifier circuit 340 may be a rectifier bridge circuit, wherein the rectifier bridge circuit may include a rectifier device composed of two or four diodes.

Specifically, the second circuit element and the circuit wiring on the second circuit wiring layer may be divided into the PFC circuit 330 and/or the rectifying circuit 340 based on the circuit implementation function. That is, the respective second circuit elements and circuit wirings included in the PFC circuit 330 can realize respective PFC (power factor correction) functions; the respective second circuit elements and circuit wirings included in the rectifying circuit 340 can realize respective rectifying functions.

In one example, the circuit layer 300 may further include a PFC circuit 330, where a device chip corresponding to the PFC circuit 330 is mounted on a device mounting position corresponding to the circuit layer 300 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the PFC circuit 330 are mounted on the device mounting position corresponding to the circuit layer 300 by an automatic SMT device; then, the whole semi-finished product is passed through a reflow oven to weld all components to corresponding installation positions, and the welding quality of the components is detected through visual inspection AOI equipment; cleaning the first substrate 100 of foreign matters such as flux and aluminum scraps by spraying, ultrasonic and other cleaning methods; the PFC circuit 330 and the circuit wiring are connected through bonding wires, so that the PFC circuit 330 is installed, and the three-in-one semiconductor circuit 10 integrating the PFC circuit 330, the fan IPM (i.e. the fan control circuit 420 and the fan inverter circuit 320) and the MCU chip 910 is further realized; or a three-in-one semiconductor circuit 10 integrating the PFC circuit 330, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), and the MCU chip 910; or a four-in-one semiconductor circuit 10 integrating the PFC circuit 330, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), the blower IPM (i.e., the blower control circuit 420 and the blower inverter circuit 320), and the MCU chip 910.

In one example, the circuit layer 300 may further include a rectifying circuit 340, where a device chip corresponding to the rectifying circuit 340 is mounted on a component mounting position corresponding to the circuit layer 300 by brushing solder paste or dispensing silver paste, and a resistor and a capacitor corresponding to the rectifying circuit 340360 are mounted on a component mounting position corresponding to the circuit layer 300 by an automatic SMT device; then, the whole semi-finished product is passed through a reflow oven to weld all components to corresponding installation positions, and the welding quality of the components is detected through visual inspection AOI equipment; cleaning the first substrate 100 of foreign matters such as flux and aluminum scraps by spraying, ultrasonic and other cleaning methods; the PFC circuit 330 and the circuit wiring are connected through bonding wires, so that the rectifying circuit 340 is installed, and the three-in-one semiconductor circuit 10 integrating the rectifying circuit 340, the fan IPM (i.e. the fan control circuit 420 and the fan inverter circuit 320) and the MCU chip 910 is further realized; or a three-in-one semiconductor circuit 10 integrating the rectifying circuit 340, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), and the MCU chip 910; or a four-in-one semiconductor circuit 10 integrating the rectifier circuit 340, the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), the blower IPM (i.e., the blower control circuit 420 and the blower inverter circuit 320), and the MCU chip 910.

It should be noted that the circuit layer 300 may further include both the PFC circuit 330 and the rectifying circuit 340. Based on the above-mentioned installation and preparation method of the PFC circuit 330 and the installation and preparation method of the rectifying circuit 340, the PFC circuit 330 and the rectifying circuit 340 may be installed, so as to implement the four-in-one semiconductor circuit 10 integrating the compressor IPM (i.e., the compressor control circuit 410 and the compressor inverter circuit 310), the PFC circuit 330, the rectifying circuit 340 and the MCU chip 910; or a four-in-one semiconductor circuit 10 integrating a blower IPM (i.e., a blower control circuit 420 and a blower inverter circuit 320), a PFC circuit 330, a rectifying circuit 340, and an MCU chip 910; or a five-in-one semiconductor circuit 10 integrating a compressor IPM (i.e., a compressor control circuit 410 and a compressor inverter circuit 310), a blower IPM (i.e., a blower control circuit 420 and a blower inverter circuit 320), a PFC circuit 330, a rectifying circuit 340, and an MCU chip 910.

In the above-described embodiments, based on the characteristics of the semiconductor circuit 10 of the present application, such as high integration degree, high flexibility of wiring, good heat dissipation, and small product size, the semiconductor circuit 10 with different functions can be realized by combining different circuit elements and corresponding circuit wirings.

In some embodiments of the present invention, as in fig. 8, there is also provided a method for manufacturing a semiconductor circuit according to the above-mentioned embodiments, the method comprising the steps of:

Step S100, providing a first substrate and a second substrate;

step 200, preparing a first insulating layer on a first substrate;

Step S300, preparing a circuit layer on the first insulating layer;

Step S400, preparing an IC control circuit on a first plate surface of a second substrate, wherein the second plate surface of the second substrate is provided with a chip mounting area for mounting an MCU chip, each electric connection piece is prepared in the chip mounting area, the second substrate is provided with a via hole, and the IC control circuit is connected with the corresponding electric connection piece through a first metal wire passing through the via hole;

Step S500, an electrical connection line group and a plurality of pins are arranged on the circuit layer, the first ends of the electrical connection line group are electrically connected with the circuit layer, and the first ends of the pins are respectively connected with the circuit layer through second metal wires;

step S600, bending the electric connection wire group, and respectively connecting the IC control circuit and each electric connection piece at the second end of the electric connection wire group so that the second substrate is positioned right above the first substrate;

Step S700, performing injection molding on a first substrate provided with a circuit layer, a plurality of pins and an electrical connection wire group and a first panel provided with a second substrate of an IC control circuit through a packaging die to form a sealing body, wherein second ends of the plurality of pins are respectively led out from a first side surface of the sealing body, and a second panel provided with a chip mounting area is exposed from a second side surface of the sealing body;

Step S800, placing the MCU chip in a chip mounting area, and welding each pin of the MCU chip and each electric connection piece in a one-to-one correspondence manner to form a semiconductor circuit.

Specifically, the semiconductor circuit is prepared by the following steps: designing a first substrate and a second substrate with proper sizes according to the required circuit layout, wherein for a general semiconductor circuit, the size of one substrate can be 64mm multiplied by 30mm; placing the prepared first substrate into a special carrier (the carrier can be aluminum, synthetic stone, ceramic, PPS and other materials with high temperature resistance of more than 200 ℃), preparing a first insulating layer on the first substrate, pressing copper foil on the surface of the first insulating layer, and locally taking out the copper foil by etching the copper foil to form a second circuit wiring layer; mounting a power device chip on a component mounting position reserved in a circuit layer through brushing solder paste or dispensing silver paste, mounting a resistor and a capacitor on the component mounting position through automatic die bonding equipment (DA machine), mounting pins on the corresponding mounting position through automatic SMT equipment, and fixing the pins through a carrier by a manipulator or manually; and then, the whole semi-finished product comprises a carrier, all components are welded on corresponding installation positions through a reflow oven, the welding quality of the components is detected through visual inspection AOI equipment, foreign matters such as soldering flux and aluminum scraps remained on the metal aluminum substrate are removed through cleaning modes such as spraying, ultrasonic and the like, and the circuit elements and the circuit wiring are connected through bonding wires, so that a circuit layer is formed on the first substrate.

The second substrate can be a glass fiber board, and the size of the glass fiber board is smaller than that of the first substrate. Pressing copper foil on the first plate surface of the second substrate, and then etching the copper foil to locally take out the copper foil so as to form a first circuit wiring layer; mounting an IC control chip on a component mounting position reserved on a first circuit wiring layer through brushing solder paste or dispensing silver paste, mounting a resistor and a capacitor on the component mounting position through automatic die bonding equipment (DA machine), and placing pins on corresponding mounting positions through a manipulator or a person and fixing the pins through a carrier through automatic SMT equipment; and then, the whole semi-finished product comprises a carrier, all components are welded to corresponding mounting positions through a reflow oven, the welding quality of the components is detected through visual inspection AOI equipment, and foreign matters such as soldering flux and aluminum scraps remained on the second substrate are removed through cleaning modes such as spraying, ultrasonic and the like, so that an IC control circuit is formed on the first plate surface of the second substrate. In addition, copper foil is pressed on the second plate surface of the second substrate, and then the copper foil is etched according to the pin arrangement rule of the MCU chip, so that each electrical connection piece (namely the MCU bonding pad) is formed. Preparing a via hole on the second substrate to electrically connect the corresponding electric connecting piece on the second board surface with the IC control circuit on the first board surface; for example, the IC control circuit is connected to the corresponding electrical connection member through the first metal line passing through the via hole.

All pins (such as low-voltage pins and high-voltage pins) are made of metal base materials such as copper base materials, for example, the length C is 25mm, the width K is 1.5mm, the thickness H is 1mm, a certain radian can be pressed and shaped at one end of each pin for assembly, and then a nickel layer is formed on the surface of each pin by an electroless plating method: the nickel layer is formed on the surface of the copper material with a specific shape by mixing the nickel salt and the sodium hypophosphite and adding a proper complexing agent, the metal nickel has strong passivation capability, and an extremely thin passivation film can be rapidly formed, so that the corrosion of atmosphere, alkali and certain acid can be resisted. The nickel plating crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 mu m; then, through an acidic sulfate process, the copper material with the formed shape and the nickel layer is immersed in a plating solution with positive tin ions at room temperature for electrifying, a nickel-tin alloy layer is formed on the surface of the nickel layer, the thickness of the nickel layer is generally controlled to be 5 mu m, and the formation of the nickel layer greatly improves the protectiveness and the weldability. Thus completing the preparation of the pins. And then the first ends of the pins are prepared on the circuit layer by reflow soldering, and the solder paste or silver paste is solidified.

Then, the metal sheet is processed through a stamping or etching process, so that a plurality of metal wire patterns can be obtained; sequentially covering the second insulating layer and the film layer on the surface of the metal line pattern through spraying or coating and other processes, and then forming a film through drying, wherein the film has certain toughness and can be bent and folded; or a layer of adhesive is coated on the surface of the metal line pattern, and the film-shaped insulating material is adhered by natural air drying or heating and drying, so that a series of protection effects are achieved on the metal line pattern, and an electric connection line group is formed; then, connecting the first ends of the electric connection wire groups to the circuit layer, and connecting the second ends of the electric connection wire groups to the IC control circuit and the corresponding electric connection pieces respectively; bending the electric connection wire group to a preset radian, so that the second substrate can be positioned right above the first substrate, the first plate surface of the second substrate is close to the first substrate, and the electric connection wire group is fixed through a special carrier, so that all electric connection pieces on the second plate surface of the second substrate can be exposed out of the package body. The metal substrate can be processed through a stamping or etching process, and then the MCU bonding pad with each electric connection piece pattern can be obtained.

Adopting a preset and designed plastic packaging mold with a chip mounting area, and in the preparation process, adopting a plastic packaging mold with the chip mounting area through a plastic packaging process, and plastic packaging a first substrate provided with a circuit layer, a plurality of pins and an electrical connection wire group and a first panel provided with a second substrate of an IC control circuit in the plastic packaging mold through plastic packaging materials; finally, demolding is carried out, after demolding, the plastic packaging material forms a sealing body, the first substrate provided with the circuit layer, the plurality of pins and the electrical connection wire group and the first panel of the second substrate provided with the IC control circuit are molded in the sealing body, and each electrical connection piece on the second panel of the second substrate is exposed out of the sealing body, namely, the specific position of the circuit wiring with specific potential exposed out of the sealing body is connected with the MCU chip.

Finally, forming a packaged semi-finished product after the procedures of marking, PMC post-curing, rib cutting, forming and the like; dispensing all the electric connection pieces (namely pin bonding pads) on the second plate surface of the second substrate, and welding the MCU chip to a chip mounting area on the sealing body through high-temperature reflow; and testing the electrical performance of the product by an electrical parameter tester, thereby forming the semiconductor circuit.

In the above embodiment, the electrical connection wire set is bent between the first substrate and the second substrate, and the second surface of the second substrate is exposed from the sealing body, so as to integrate the MCU chip outside (the second side) the semiconductor circuit, the IC control circuit with low heat dissipation requirement is arranged on the first plate surface of the second substrate, and the MCU chip is arranged on the second plate surface of the second substrate, so that the MCU chip and the IC control circuit are separated by only one thickness of the second substrate, and the signal transmission distance is greatly shortened. Thereby realizing zero-distance transmission of control signals and reducing the area of the glass fiber board; meanwhile, the strong current and weak current are separated in the same semiconductor circuit, so that the anti-interference capability of the whole semiconductor circuit is improved, the electronic control is miniaturized, the wiring is more flexible, the cost is low, and the product volume is further reduced; in addition, when the semiconductor circuit fails, the MCU chip integrated outside the module can be independently taken out, so that the utilization rate of components is improved, and failure analysis is facilitated; when the MCU chip fails, the MCU chip can be replaced to remove the failure, so that the maintenance cost is reduced, and the reliability of the product is improved.

In some embodiments of the present invention, as shown in fig. 9, the preparation steps of the electrical connection wire set include:

Step S510, providing a metal sheet;

step S520, preparing a flat cable layer on the metal sheet;

Step S530, covering the first surface of the flat cable layer with a second insulating layer;

step S540, covering a film layer on a second surface of the second insulating layer opposite to the first surface; the first end of the flat cable layer is connected to the circuit layer, and the second end of the flat cable layer is respectively connected to the IC control circuit and the corresponding electrical connector.

Specifically, the metal sheet is processed through a stamping or etching process, so that a flat cable layer with a plurality of metal wire patterns can be obtained; the second insulating layer and the film layer are covered on the first surface and the second surface of the flat cable layer sequentially through spraying or coating and other processes, and then a layer of film is formed through drying, and the film has certain toughness and can be bent and folded; or a layer of adhesive is coated on the surface of the wire-arranging layer, and the film-shaped insulating material is adhered by natural air drying or heating and drying, so that a series of protection effects are realized on the wire-arranging layer, accidental short circuit among the metal wires on the wire-arranging layer due to external environment pollution is prevented, oxidation of the metal wires on the wire-arranging layer is prevented, the surface damage of the metal wires on the wire-arranging layer is prevented, and the strength of the wire-arranging layer is increased when the wire-arranging layer is bent and folded; then, connecting the first end of the wire arrangement layer to the circuit layer, and connecting the second end of the wire arrangement layer to the IC control circuit and the corresponding electric connecting piece respectively; the flat cable layer provided with the second insulating layer and the film layer is bent to a preset radian, so that the second substrate connected with the second end of the flat cable layer can be positioned right above the first substrate, and the flat cable layer is fixed through a special carrier, so that all electric connection pieces on the second plate surface of the second substrate can be exposed out of the packaging body.

In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.

In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.

In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.

Claims

1. A semiconductor circuit is provided, which is a semiconductor circuit, characterized by comprising the following steps:

A first substrate, on which a first insulating layer is provided;

a circuit layer disposed on the first insulating layer;

The first board surface of the second substrate is provided with an IC control circuit, and the IC control circuit is electrically connected with the second end of the electrical connection line group; the second board surface of the second substrate is provided with a chip mounting area for mounting an MCU chip, the chip mounting area is provided with a plurality of electric connection pieces, each electric connection piece is used for being connected with each pin of the MCU chip in a one-to-one correspondence manner, each electric connection piece is respectively and electrically connected with the second end of the electric connection wire group, and the IC control circuit is electrically connected with the corresponding electric connection piece;

The sealing body wraps the first substrate, the first plate surface of the second substrate provided with the IC control circuit and the circuit layer connected with the electric connection wire group and the pins;

The second ends of the pins are respectively led out from the first side face of the sealing body; the electrical connection line group is bent and arranged between the first substrate and the second substrate, and the second plate surface of the second substrate is exposed from the sealing body;

The IC control circuit comprises a first circuit wiring layer and a first circuit element arranged on the first circuit wiring layer; the first circuit wiring layer is arranged on a first plate surface of the second substrate;

The circuit layer includes a second circuit wiring layer, and a second circuit element disposed on the second circuit wiring layer; the second circuit wiring layer is arranged on the first insulating layer.

2. The semiconductor circuit of claim 1, wherein the IC control circuitry comprises compressor control circuitry and/or fan control circuitry; the compressor control circuit includes a respective first circuit wiring and a respective first circuit element in the first circuit wiring layer; the fan control circuit includes respective first circuit wirings and respective first circuit elements in the first circuit wiring layer.

3. The semiconductor circuit of claim 1 or 2, wherein the set of electrical connection lines comprises a flat cable layer, a second insulating layer, and a thin film layer; the second insulating layer is provided with the wire arrangement layer, the film layer covers the wire arrangement layer, the first end of the wire arrangement layer is connected with the circuit layer, and the second end of the wire arrangement layer is respectively connected with the IC control circuit and the corresponding electric connection piece.

4. The semiconductor circuit of claim 3, wherein a resistive-capacitive element is disposed proximate the second end of the set of electrical connection lines, the resistive-capacitive element being electrically connected to the bus layer.

5. The semiconductor circuit of claim 1, wherein the circuit layer further comprises a compressor inverter circuit and/or a blower inverter circuit, the compressor inverter circuit comprising respective second circuit wiring and second circuit elements in the second circuit wiring layer; the fan inverter circuit includes respective second circuit wirings and respective second circuit elements in the second circuit wiring layer.

6. The semiconductor circuit according to claim 1 or 5, wherein the circuit layer further comprises a PFC circuit and/or a rectifying circuit; the PFC circuit comprises corresponding second circuit wiring and second circuit elements in the second circuit wiring layer; the rectifying circuit includes respective second circuit wirings and respective second circuit elements in the second circuit wiring layer.

7. A method for manufacturing a semiconductor circuit according to any one of claims 1 to 6, comprising the steps of:

providing a first substrate and a second substrate;

preparing a first insulating layer on the first substrate;

preparing a circuit layer on the first insulating layer;

Preparing an IC control circuit on a first plate surface of the second substrate, wherein a chip mounting area for mounting an MCU chip is arranged on the second plate surface of the second substrate, each electric connecting piece is prepared in the chip mounting area, a through hole is formed in the second substrate, and the IC control circuit passes through the through hole through a first metal wire and is connected with the corresponding electric connecting piece;

The circuit layer is provided with an electrical connection line group and a plurality of pins, the first ends of the electrical connection line group are electrically connected with the circuit layer, and the first ends of the pins are respectively connected with the circuit layer through second metal wires;

Injection molding the first substrate provided with the circuit layer, the pins and the electrical connection wire groups and the first panel provided with the second substrate of the IC control circuit through a packaging die to form a sealing body, wherein the second ends of the pins are led out from the first side surface of the sealing body respectively, and the second panel provided with the second substrate of the chip mounting area is exposed from the second side surface of the sealing body;

And placing the MCU chip in the chip mounting area, and welding each pin of the MCU chip and each electric connecting piece in one-to-one correspondence to form the semiconductor circuit.

8. The method of manufacturing according to claim 7, wherein the step of manufacturing the electrical connection wire group includes:

providing a metal sheet;

preparing a flat cable layer on the metal sheet;

covering a film layer on a second surface of the second insulating layer opposite to the first surface; and the first end of the wire arrangement layer is connected to the circuit layer, and the second end of the wire arrangement layer is respectively connected with the IC control circuit and the corresponding electrical connection piece.