CN113193326B - W-band multi-channel airtight packaging phased array SIP module - Google Patents
W-band multi-channel airtight packaging phased array SIP module Download PDFInfo
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- CN113193326B CN113193326B CN202110754143.1A CN202110754143A CN113193326B CN 113193326 B CN113193326 B CN 113193326B CN 202110754143 A CN202110754143 A CN 202110754143A CN 113193326 B CN113193326 B CN 113193326B
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- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims description 42
- 239000000523 sample Substances 0.000 claims description 28
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 230000010363 phase shift Effects 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 description 11
- 230000003321 amplification Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
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Abstract
The invention discloses a W-band multichannel airtight packaging phased array SIP module, which comprises: the SIP cavity is provided with a plurality of W-frequency-band waveguide ports; the radio frequency links are positioned in the SIP cavity, are one-to-many links, and are connected with W frequency band waveguide ports; the connection sub-board consists of a radio frequency substrate and an interface board; and the AD control chip is positioned in the SIP cavity, the AD control chip is connected with the radio frequency link through the radio frequency substrate, and the AD control chip is also connected with the interface board. The radio frequency link is a one-to-many link, so that the number of required elements is reduced, and the circuit is convenient to integrate into a small-size structure body.
Description
Technical Field
The invention relates to the technical field of SIP modules, in particular to a W-band multi-channel airtight packaging phased array SIP module.
Background
The W frequency band is used as one of four atmospheric windows with small transmission loss in the millimeter wave frequency band, and has wide application prospect in the field of phased arrays due to the characteristics of high frequency, wide frequency band, small loss and the like. SIP, system in package, refers to a package of two or more different chips assembled together to form a system.
The frequency of the W frequency band is high, the size of a corresponding circuit structure is small, and the requirements on various aspects such as circuit processing, structure processing, assembly processes and the like are very strict. The W-band phased array requires a small channel pitch, and generally, a single channel needs to simultaneously realize functions of channel transmission and reception signal amplification, phase-shift attenuation control, transmission and reception power-up control, and the like, and it is very difficult to integrate chips and circuits for realizing these functions into a small-size structure body which can be realized. Due to the process reasons of all links, the TR design of the W frequency band may involve a large amount of testing, debugging, repairing and replacing, and the integrated TR design brings about a large failure risk and waste of design and production time. In order to ensure the performance of W-band signal transmission, an air waveguide transmission mode is generally adopted, which causes waveguide openings at the input and output parts of the SIP module, and thus, air tightness is difficult to achieve.
Due to the reasons, the existing W-band TR component design has a higher design threshold, the number of SIP small module packaging designs adopted in the TR design is less, and meanwhile, the difficulty in realizing the airtight design of the W-band TR channel is high.
Disclosure of Invention
The invention aims to overcome one or more defects in the prior art and provides a W-band multi-channel hermetically-packaged phased array SIP module.
The purpose of the invention is realized by the following technical scheme: the utility model provides a W frequency channel multichannel airtight encapsulation phased array SIP module which characterized in that includes:
the SIP cavity is provided with a plurality of W-frequency-band waveguide ports;
the radio frequency links are positioned in the SIP cavity, are one-to-many links, and are connected with W frequency band waveguide ports;
the connection sub-board consists of a radio frequency substrate and an interface board;
and the AD control chip is positioned in the SIP cavity, the AD control chip is connected with the radio frequency link through the radio frequency substrate, and the AD control chip is also connected with the interface board.
Preferably, the radio frequency link includes a common link and a plurality of branch links;
the public link comprises a first W-band power amplifier chip, and the first W-band power amplifier chip is connected with a W-band waveguide port;
the branch link comprises a second W-band power amplifier chip, a third W-band power amplifier chip and a W-band phase-shifting attenuation control chip;
the W-band phase-shift attenuation control chip is connected with the first W-band power amplifier chip through a radio frequency transmission circuit;
the second W-band power amplifier chip is connected with the W-band phase-shifting attenuation control chip;
the third W frequency band power amplifier chip is connected with the second W frequency band power amplifier chip and a W frequency band waveguide port;
and the first W frequency band power amplifier chip, the second W frequency band power amplifier chip, the third W frequency band power amplifier chip and the W frequency band phase-shifting attenuation control chip are connected with the AD control chip through the radio frequency substrate.
Preferably, the radio frequency transmission circuit includes:
the first transmission circuit is connected with the first W-band power amplifier chip;
a second transmission circuit connected to the first transmission circuit;
and each third transmission circuit is respectively connected with the corresponding W-band phase-shift attenuation control chip and the second transmission circuit.
Preferably, the radio frequency links are arranged in a chain manner along a horizontal direction or a vertical direction.
Preferably, the periphery of the installation position of the AD control chip and the radio frequency link is provided with an assembly groove.
Preferably, the wall thickness of the SIP cavity is greater than 1 mm.
Preferably, the radio frequency link is connected with the W frequency band waveguide port through a microstrip-waveguide conversion structure; the microstrip-waveguide conversion structure is arranged on a ceramic substrate, the ceramic substrate is arranged on the W-band waveguide port, and the ceramic substrate seals the W-band waveguide port.
Preferably, the microstrip-waveguide conversion structure comprises a probe, two probe coupling pieces and a grounding block, the probe and the probe coupling pieces are respectively arranged on two sides of the grounding block, the two probe coupling pieces are symmetrically arranged by taking the probe as a central line, and the probe is provided with a fine line segment which is formed by inwards sinking
Preferably, the connector sub-board is a high-temperature co-fired ceramic circuit board.
Preferably, the radio frequency substrate and the interface board are embedded with the cavity of the SIP cavity in an alignment manner, and the interface board is welded with the SIP cavity; and/or the presence of a gas in the gas,
the SIP cavity is composed of a lower cavity and a cover plate, and the lower cavity and the cover plate are sealed and welded through laser.
Preferably, the channel spacing of the radio frequency link is 5-7 mm.
The invention has the beneficial effects that:
(1) the radio frequency link is a one-to-many link, so that the number of required elements is reduced, and the circuit is convenient to integrate into a small-size structure body;
(2) the radio frequency transmission circuit adopts a sectional design, so that the difficulty of production and debugging caused by a special-shaped structure is reduced, and the feasibility of design and production is improved;
(3) the whole chain is arranged along the horizontal direction or the vertical direction in a chain manner, so that the space in the vertical direction or the horizontal direction is saved, and the channel spacing is conveniently reduced;
(4) by arranging the assembling groove, the corresponding parts can be conveniently operated by using tools such as tweezers and the like during assembling;
(5) the wall thickness of the SIP cavity is larger than 1mm, so that the structural strength and the channel signal shielding performance are ensured, and the processing precision is convenient to achieve;
(6) the microstrip-waveguide conversion structure is arranged on the ceramic substrate, and the ceramic substrate seals the W-band waveguide port, so that the microwave-waveguide signal conversion is completed, and the W-band waveguide port is sealed in an airtight manner;
(7) the connection sub-board is a high-temperature co-fired ceramic circuit board and has higher structural strength;
(8) the radio frequency substrate and the interface board are embedded with the SIP cavity in an alignment way, and the interface board is welded with the SIP cavity, so that the integration of a signal transmission function and an air sealing and closing function is realized;
(9) the lower cavity and the cover plate are sealed and welded by laser, so that the complete air tightness of the SIP cavity is realized.
Drawings
FIG. 1 is a schematic diagram of a W-band multi-channel hermetically packaged phased array SIP module;
FIG. 2 is a schematic diagram of a microstrip-waveguide transition structure;
in the figure, 1-SIP cavity, 2-W frequency band waveguide port, 3-radio frequency substrate, 4-interface board, 5-AD control chip, 6-first W frequency band power amplifier chip, 7-radio frequency transmission circuit, 8-W frequency band phase shift attenuation control chip, 9-second W frequency band power amplifier chip, 10-third W frequency band power amplifier chip, 11-first transmission circuit, 12-second transmission circuit, 13-third transmission circuit, 14-assembly slot, 15-microstrip-waveguide conversion structure, 16-probe, 17-probe coupling piece, 18-grounding block.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1-2, the present embodiment provides a W-band multi-channel hermetically-packaged phased array SIP module:
as shown in fig. 1, a W-band multichannel hermetically-packaged phased array SIP module includes an SIP cavity 1, a connection daughter board, an AD control chip 5, and a plurality of radio frequency links.
And the SIP cavity 1 is provided with a plurality of W-frequency-band waveguide ports 2. In some embodiments, the SIP cavity 1 is composed of a lower cavity and a cover plate, the W-band waveguide port 2 is disposed on the lower cavity, and the lower cavity and the cover plate are sealed and welded by laser, so that the complete air tightness of the SIP cavity 1 is ensured.
The connection daughter board is composed of a radio frequency substrate 3 and an interface board 4. Generally, the radio frequency substrate 3 is used to correspondingly connect ports of each chip, and the interface board 4 is a circuit board including a low frequency circuit and a power interface. In some embodiments, the connector sub-board is a high temperature co-fired ceramic circuit board (HTCC) having high structural strength. In some embodiments, the radio frequency substrate 3 and the interface board 4 are aligned and embedded with the inner cavity of the SIP cavity 1, and the interface board 4 is welded with the SIP cavity 1, so that the hermetic sealing of the slot at the interface board 4 is achieved after the complete assembly.
The AD control chip 5 is positioned in the SIP cavity 1, the AD control chip 5 is connected with the radio frequency link through the radio frequency substrate 3, and the AD control chip 5 is also connected with the interface board 4
The radio frequency link is positioned in the SIP cavity 1, the radio frequency link is a one-to-many link, and ports of the radio frequency link are connected with the W-band waveguide port 2. The radio frequency link is a one-to-many link which reduces the number of components required to facilitate integration of the circuit into a small-sized structure. For example, the rf link may be a one-to-two link, a one-to-three link, a one-to-four link, and the like.
In some embodiments, the radio frequency links are chain laid out in a horizontal direction or a vertical direction. Specifically, when the radio frequency links are arranged in a chain manner along the vertical direction, the space in the horizontal direction is saved, and the distance between channels in the horizontal direction is conveniently reduced; similarly, when the radio frequency link is arranged along the horizontal direction in a chain manner, the vertical space is saved, and the vertical channel interval is conveniently reduced.
In some embodiments, as shown in fig. 2, the radio frequency link includes a common link and a plurality of branch links, and the common link is connected with the plurality of branch links respectively.
Specifically, the public link comprises a first W-band power amplifier chip 6, and the branch link comprises a second W-band power amplifier chip 9, a third W-band power amplifier chip 10 and a W-band phase-shift attenuation control chip 8.
First W frequency channel power amplifier chip 6 is connected with a W frequency channel waveguide mouth 2, W frequency channel shift the phase attenuation control chip 8 through radio frequency transmission circuit 7 with first W frequency channel power amplifier chip 6 is connected, second W frequency channel power amplifier chip 9 with W frequency channel shift the phase attenuation control chip 8 and connect, third W frequency channel power amplifier chip 10 with second W frequency channel power amplifier chip 9 and a W frequency channel waveguide mouth 2 are connected, first W frequency channel power amplifier chip 6, second W frequency channel power amplifier chip 9, third W frequency channel power amplifier chip 10 and W frequency channel shift the phase attenuation control chip 8 and all be connected with AD control chip 5 through radio frequency base plate 3.
Taking fig. 1 as an example, the working process is as follows: the external control system inputs corresponding signals from a low-frequency circuit and a power interface on the interface board 4 and transmits the signals to the AD control chip 5, the AD control chip 5 generates corresponding control signals, and the control signals are transmitted to the first W frequency band power amplification chip 6, the second W frequency band power amplification chip 9, the third W frequency band power amplification chip 10 and the W frequency band phase-shifting attenuation control chip 8 through the radio frequency substrate 3. When the phased array transmits signals, radio frequency signals are input from a W-band waveguide port 2 at the lower part, transmitted to a first W-band power amplifier chip 6 through a microstrip-waveguide conversion structure 15 (a microstrip-waveguide conversion structure), divided into 2 channels through a radio frequency transmission circuit 7, and subjected to corresponding signal power amplification, amplitude phase adjustment and the like after passing through a W-band phase-shift attenuation control chip 8, a second W-band power amplifier chip 9 and a third W-band power amplifier chip 10 of each channel respectively, and then output from an upper W-band waveguide port 2 through the microstrip-waveguide conversion structure 15; the phased array receiving signal is the inverse process of the transmitting process.
In some embodiments, the radio frequency transmission circuit 7 includes a first transmission circuit 11, a second transmission circuit 12 and a plurality of third transmission circuits 13, and each of the first transmission circuit 11, the second transmission circuit 12 and the third transmission circuits 13 is a microstrip substrate with a regular shape, such as a rectangle. The first transmission circuit 11 is connected with the first W-band power amplifier chip 6; the second transmission circuit 12 is connected to the first transmission circuit 11, when the phased array transmits a signal, the second transmission circuit 12 divides one path of radio frequency signal into multiple paths to be output, and when the phased array receives a signal, the second transmission circuit 12 combines the multiple paths of radio frequency signals into one path to be output; each third transmission circuit 13 is connected with the corresponding W-band phase shift attenuation control chip 8 and the second transmission circuit 12. In these embodiments, the radio frequency transmission circuit 7 is a microstrip substrate which is designed into a regular shape in a sectional manner, so as to avoid the negative influence caused by a special-shaped structure. The number of segments of the radio frequency transmission circuit 7 may be determined according to practical situations.
In some embodiments, the assembly grooves 14 are formed around the mounting positions of the AD control chip 5 and the radio frequency link, so that the corresponding components can be conveniently operated by using tools such as tweezers during assembly, that is, the assembly grooves 14 are formed around the D control chip, the first W-band power amplifier chip 6, the second W-band power amplifier chip 9, the third W-band power amplifier chip 10, the W-band phase-shift attenuation control chip 8, the radio frequency transmission circuit 7, and other elements. Simultaneously, the wall thickness of SIP cavity 1 is greater than 1mm, promptly after setting up assembly groove 14, the wall thickness of SIP cavity 1 is also greater than 1mm to can compromise machine and add realization precision, structural strength and passageway signal shielding performance.
In some embodiments, the radio frequency link is connected to the W-band waveguide port 2 through a microstrip-waveguide transition structure 15. The microstrip-waveguide conversion structure 15 is arranged on a ceramic substrate, the ceramic substrate has high structural strength, the ceramic substrate is arranged on the W-band waveguide port 2, and the ceramic substrate seals the W-band waveguide port 2, so that the microwave-waveguide conversion is completed, and meanwhile, the airtight sealing of the W-band waveguide port 2 is realized.
In some embodiments, as shown in fig. 2, the microstrip-waveguide transition structure 15 includes a probe 16, two probe coupling tabs 17, and a ground bump 18. The probes 16 and the probe coupling pieces 17 are respectively arranged on two sides of the grounding block 18, and the grounding block 18 can efficiently shield the probes 16, so that the loss of the probes 16 is reduced; the two probe coupling pieces 17 are symmetrically arranged by taking the probe 16 as a central line, so that the bandwidth of the probe can be widened, and the broadband design is realized; the probe 16 is provided with a thin line segment which is formed by inwards sinking, so that the high-efficiency impedance transformation of the probe 16 can be realized, the width of the thin line segment is 0.08mm, the length of the thin line segment is 0.2mm, and the distance from the thin line segment to the bottom end of the probe 16 in the graph 2 is 0.21 mm.
In some embodiments, the channel spacing of the radio frequency link is 5-7mm, for example, the channel spacing is 5.3mm, which is suitable for a W-band phased array.
The foregoing is illustrative of the preferred embodiments of this invention, and it is to be understood that the invention is not limited to the precise form disclosed herein and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the concept as disclosed herein, either as described above or as apparent to those skilled in the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. The utility model provides a W frequency channel multichannel airtight encapsulation phased array SIP module which characterized in that includes:
the SIP cavity (1), wherein a plurality of W-band waveguide ports (2) are arranged on the SIP cavity (1);
the radio frequency links are positioned in the SIP cavity (1), are one-to-many links, and are connected with the W-band waveguide port (2) at the ports;
the connection sub-board consists of a radio frequency substrate (3) and an interface board (4);
the AD control chip (5) is positioned in the SIP cavity (1), the AD control chip (5) is connected with the radio frequency link through the radio frequency substrate (3), and the AD control chip (5) is also connected with the interface board (4);
the radio frequency link comprises a common link and a plurality of branch links;
the public link comprises a first W-band power amplifier chip (6), and the first W-band power amplifier chip (6) is connected with a W-band waveguide port (2);
the branch link comprises a second W-band power amplifier chip (9), a third W-band power amplifier chip (10) and a W-band phase-shift attenuation control chip (8);
the W-band phase-shift attenuation control chip (8) is connected with the first W-band power amplifier chip (6) through a radio frequency transmission circuit (7);
the second W frequency band power amplifier chip is connected with (12) the W frequency band phase-shifting attenuation control chip (8);
the third W-band power amplifier chip (10) is connected with the second W-band power amplifier chip (9) and a W-band waveguide port (2);
the first W frequency band power amplifier chip (6), the second W frequency band power amplifier chip (9), the third W frequency band power amplifier chip (10) and the W frequency band phase-shifting attenuation control chip (8) are connected with the AD control chip (5) through the radio frequency substrate (3).
2. A W-band multi-channel hermetically-packaged phased array SIP module according to claim 1, wherein the radio frequency transmission circuit (7) comprises:
the first transmission circuit (11) is connected with the first W frequency band power amplifier chip (6);
a second transmission circuit (12) connected to the first transmission circuit (11);
and each third transmission circuit (13) is respectively connected with the corresponding W-band phase-shift attenuation control chip (8) and the second transmission circuit (12).
3. The SIP module of claim 1, wherein the RF links are arranged in a chain manner along a horizontal direction or a vertical direction.
4. The W-band multi-channel hermetically-packaged phased array SIP module according to claim 1, wherein the AD control chip (5) and the radio frequency link are provided with assembling grooves (14) at the periphery of the installation position.
5. A W-band multichannel hermetically sealed phased array SIP module according to claim 4, characterised in that the wall thickness of the SIP cavity (1) is greater than 1 mm.
6. The W-band multi-channel hermetically-packaged phased array SIP module according to claim 1, wherein the radio frequency link is connected with a W-band waveguide port (2) through a microstrip-waveguide transition structure (15); the microstrip-waveguide conversion structure (15) is arranged on a ceramic substrate, the ceramic substrate is arranged on the W-band waveguide port (2), and the ceramic substrate seals the W-band waveguide port (2).
7. The W-band multi-channel hermetically-packaged phased-array SIP module according to claim 6, wherein the microstrip-waveguide transition structure (15) comprises a probe (16), two probe coupling pieces (17) and a ground block (18), the probe (16) and the probe coupling pieces (17) are respectively disposed on two sides of the ground block (18), the two probe coupling pieces (17) are symmetrically disposed with the probe (16) as a center line, and the probe (16) is provided with a fine line segment formed by inward recess.
8. The W-band multi-channel hermetically packaged phased array SIP module according to claim 1, wherein the connector board is a high temperature co-fired ceramic circuit board.
9. The W-band multichannel hermetically-packaged phased array SIP module according to claim 1, wherein the radio frequency substrate (3) and the interface board (4) are embedded in an inner cavity of the SIP cavity (1) in an alignment manner, and the interface board (4) is welded with the SIP cavity (1); and/or the presence of a gas in the gas,
the SIP cavity (1) is composed of a lower cavity and a cover plate, and the lower cavity and the cover plate are sealed and welded through laser.
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| CN116914447B (en) * | 2023-09-14 | 2023-12-22 | 成都锐芯盛通电子科技有限公司 | Dual-band multichannel SIP module |
| CN116938276B (en) * | 2023-09-14 | 2023-12-22 | 成都锐芯盛通电子科技有限公司 | Dual-polarized multi-channel phased array SIP module |
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