CN113000475B - Cleaning method for plasma processing equipment component - Google Patents

Cleaning method for plasma processing equipment component Download PDF

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CN113000475B
CN113000475B CN201911327939.8A CN201911327939A CN113000475B CN 113000475 B CN113000475 B CN 113000475B CN 201911327939 A CN201911327939 A CN 201911327939A CN 113000475 B CN113000475 B CN 113000475B
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cleaning
cleaning agent
ionic liquid
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contacting
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CN113000475A (en
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孙祥
段蛟
陈星建
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Health & Medical Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

The invention provides a cleaning method for a plasma processing equipment part, which comprises the following steps: contacting the surface of the plasma processing apparatus component with a first cleaning agent for a period of time; contacting the surface of the part contacted with the first cleaning agent with a second cleaning agent to mainly remove the residual first cleaning agent to obtain a cleaned part; the first cleaning agent is one or more of fluorine-containing imine ionic liquid and quaternary amine ionic liquid; the second cleaning agent is a mixture of alcohol and water. The ionic liquid cleaning agent provided by the invention is used for cleaning AlF on the surface of a partxAnd YFxThe cleaning effect is higher, the operation and the use are simple, and the surface of the part can be quickly cleaned (less than 10 min). Meanwhile, the pH of the cleaning agent is closer to neutrality and the acidity is controllable, so that the cleaning agent has less damage to parts in the cleaning process and does not cause huge burden on the environment and the operation safety.

Description

Cleaning method for plasma processing equipment component
Technical Field
The invention relates to the technical field of etching processes, in particular to a cleaning method for a plasma processing equipment component.
Background
Plasma etching techniques are widely used in today's semiconductor industry; the surfaces of chamber liners and other removable components of plasma etching apparatus consist primarily of anodized aluminum and yttrium based ceramic coatings. Fluorine-based plasma etching has a negative effect on such components, fluorine in aluminum components and yttrium-based ceramic coatings (particularly Y)2O3) Will generate AlFxAnd YFxParticles, which are not volatile and can cause the etch process to drift, often affect the stability and product yield of the device E/R.
In order to solve the problems, the cleaning degree of the surfaces of the parts of the semiconductor equipment is particularly emphasized in the industry. Cleaning methods can be divided into two major categories, namely dry methods and wet methods; among the conventional wet chemical cleaning techniques, the conventional wet chemical cleaning technique involves the use of hydrofluoric acid (HF) and sulfuric acid (H)2SO4) By contacting the surface of the semiconductor substrate with the strong acid for a certain time, therebyA clean substrate is obtained. However, this cleaning method imposes a large burden on both the experimental environment and the operational safety.
Disclosure of Invention
In view of the above, the present application provides a cleaning method for plasma processing apparatus components, which has a good cleaning effect on a substrate, and is environmentally friendly and easy to operate.
The invention provides a cleaning method for a plasma processing equipment part, which comprises the following steps:
contacting the surface of the plasma processing apparatus component with a first cleaning agent for a period of time;
contacting the surface of the part contacted with the first cleaning agent with a second cleaning agent to mainly remove the residual first cleaning agent to obtain a cleaned part;
the first cleaning agent is one or more of fluorine-containing imine ionic liquid and quaternary amine ionic liquid; the second cleaning agent is a mixture of alcohol and water.
Preferably, the anion in the fluorine-containing imine ionic liquid is a bis (trifluoromethanesulfonyl) imine anion, and the cation is an imidazole cation, a quaternary amine cation or a pyridine cation.
Preferably, the cation in the fluorine-containing imine ionic liquid is 1-butyl-3-methylimidazole cation, 4-ethyl quaternary amine cation or ethylpyridine cation.
Preferably, the alcohol is isopropanol; the mass concentration of the isopropanol in the second cleaning agent is 50-98%.
Preferably, the contact with the first cleaning agent and the contact with the second cleaning agent are independently performed by means of dipping and/or spraying.
Preferably, the contact is operated in an environment with the temperature of 30-60 ℃; the contact with the first cleaning agent and the contact with the second cleaning agent are alternately carried out more than twice.
Preferably, the contacting with the first cleaning agent is performed under ultrasonic conditions; further, the total time of the wet cleaning method does not exceed 10 min.
Preferably, the plasma processing apparatus component comprises one or more of a gas showerhead, a liner, an electrostatic chuck, and an insulating window; wherein the plasma-resistant coating on the surface of the plasma treatment equipment component is preferably Al2O3、Y2O3YAG, YAM and YAP or their composite forms.
Compared with the prior art, the invention provides a wet cleaning method, which mainly takes fluorine-containing imine ionic liquid and/or quaternary ammonium ionic liquid as a cleaning agent to be in full contact with plasma treatment equipment such as plasma etching equipment parts, and the initial ionic liquid can be in full contact with AlF on the surfaces of the partsxAnd YFxForming new complexation and further forming a new ionic liquid structure; and then cleaning the part cleaned by the ionic liquid by using an alcohol-water solution until the ionic liquid residue is removed to obtain the cleaned part. The ionic liquid cleaning agent provided by the invention is used for cleaning AlF on the surface of a partxAnd YFxThe cleaning effect is higher, the operation and the use are simple, and the surface of the part can be quickly cleaned (less than 10 min). Meanwhile, the pH acid and alkali of the cleaning agent is closer to neutrality and the acidity of the cleaning agent is controllable, so that the cleaning agent has small damage to parts in the cleaning process, does not cause huge burden on the environment and operation safety, and has important economic and social significance.
In addition, the ionic liquid cleaning agent disclosed by the invention can be suitable for cleaning parts made of different materials, can be reused, is long in service cycle and saves cost.
Drawings
FIG. 1 is a graph comparing the cleaning effects of example 1 of the present invention and comparative example 1;
FIG. 2 is a graph showing the cleaning effect in example 2 of the present invention;
FIG. 3 is a graph showing the cleaning effect in example 3 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a cleaning method for a plasma processing equipment component, which comprises the following steps:
contacting the surface of the plasma processing apparatus component with a first cleaning agent for a time;
contacting the surface of the part contacted with the first cleaning agent with a second cleaning agent to mainly remove the residual first cleaning agent to obtain a cleaned part;
the first cleaning agent is one or more of fluorine-containing imine ionic liquid and quaternary amine ionic liquid; the second cleaning agent is a mixture of alcohol and water.
The cleaning method provided by the invention can better clean the parts and the like of the plasma etching equipment, and has the characteristics of environmental friendliness, convenience in operation, low cost, wide applicability and the like.
The cleanable substrate in the embodiment of the invention is mainly equipment related to plasma processing in the semiconductor industry, and comprises parts or components of plasma etching equipment, and particularly related parts and components of semiconductor equipment comprise: one or more of a gas showerhead, a liner, an electrostatic chuck, and an insulating window. Wherein the plasma-resistant coating on the surface of the component of the plasma etching equipment is aluminum oxide (Al)2O3) Yttrium oxide (Y)2O3) Yttrium Aluminum Garnet (YAG), YAM (Y)4Al2O9) And Yttrium Aluminate (YAP) or a composite form thereof. The material of the parts is not particularly limited, and AlF generally exists on the surface of the partsxAnd/or YFxParticulate matter, which may be referred to as corroded parts.
The embodiment of the invention adopts a first cleaning agent to clean the surface of the plasma etching equipment component by contacting with the surface; the first cleaning agent is ionic liquid, can be called as ionic liquid cleaning agent, and specifically is one or more of fluorine-containing imine ionic liquid and quaternary amine ionic liquid.
The ionic liquid is a salt which is in a liquid state at or near room temperature and is composed of anions and cations, and is also called as low-temperature molten salt. Ionic liquids, as ionic compounds, have a low melting point, mainly due to the fact that ions cannot regularly accumulate into crystals due to the asymmetry of certain substituents in the structure. It is generally composed of organic cations, inorganic or organic anions, and common cations are quaternary ammonium cations, imidazolium cations, pyridinium cations, pyrrole cations, and the like.
In the invention, the fluorine-containing imine ionic liquid is an ionic liquid with fluorine-containing imine anions as anions and unlimited cations; the quaternary ammonium ionic liquid is an ionic liquid with the cation being quaternary ammonium cation and the anion being unlimited. The reactions involved in cleaning the substrate for the fluoroanion-containing ionic liquids of the examples of the present invention are shown below. In the formula, [ M+F-]Represents the ionic liquid with AlFxThe complexing reaction is carried out to further form a new ionic liquid MAlF4，MAlF4Is a tetrafluoroaluminate of an organo onium, M represents an organo onium cation. Organic substances containing oxygen, nitrogen or sulfur are called onium salts if they can be dissociated into organic cations in an aqueous solution.
[M+F-]+AlF3→MAlF4。
The embodiment of the invention utilizes the ionic liquid to carry out AlF treatment on the surfaces of the liner of the cavity of the plasma etcher and the coating of other partsxAnd YFxThe advantages of performing a clean abatement over conventional acid cleaning (e.g., HF cleaning) include: 1. initial ionic liquid and AlFx、YFxA new complex is formed to further become a new ionic liquid structure, so that the reuse can be realized; 2. compared with strong acid, the ionic liquid has controllable acidity, and cannot cause huge burden on environment and operation safety; the pH value of the ionic liquid cleaning agent is closer to neutrality, and the damage to parts in the cleaning process is smaller; 3. the ionic liquid is simple and convenient to prepare, has wide selectivity and can be selected according to different experimental environments; 4. the ionic liquid cleaning agent is used for cleaning AlF on the surface of a partxAnd YFxIs more efficient in cleaningThe method is high, and can be rapidly operated at room temperature or an environment slightly higher than room temperature (such as 30-60 ℃), and the cleaning process is short in time consumption.
In a preferred embodiment of the invention, the anion in the fluorine-containing imine ionic liquid is a bis (trifluoromethanesulfonyl) imine anion, and the cation is an imidazole cation, a quaternary amine cation or a pyridine cation. The cation in the fluorine-containing imine ionic liquid comprises but is not limited to: 1-butyl-3-methylimidazole cation, 4-ethylquaternary amine cation or ethylpyridine cation. For the quaternary amine ionic liquids, sources of their quaternary amine cations include, but are not limited to: tetramethylammonium fluoride tetrahydrate, tetraethylammonium fluoride tetrahydrate, tetrapropylammonium fluoride tetrahydrate, tetrabutylammonium fluoride tetrahydrate.
The invention can adopt the ionic liquid products which are sold on the market and can also be prepared. For example, bis (trifluoromethanesulfonyl) imide anion substances and cation substances can be mixed according to a certain proportion and stirred for reaction, and the ionic liquid is obtained. In some embodiments of the invention, the bis (trifluoromethanesulfonyl) imide salt is mixed with an imidazolium salt, optionally a 1-butyl-3-methylimidazolium cation. Wherein the molar ratio of the anion to the cation substances can be 1: 1-1: 3. Then, the mixture of the two is placed in a glass container to be stirred and reacted for 1 to 5 hours at the temperature of between 50 and 200 ℃ for standby.
In some embodiments of the invention, the bis (trifluoromethanesulfonyl) imide salt is mixed with a quaternary ammonium salt, optionally a 4-ethylquaternary ammonium cation. Wherein the molar ratio of the anionic to cationic substances can be 1: 1-1: 5. Then, the mixture of the two is placed in a glass container to be stirred and reacted for 1-5 hours at 50-150 ℃ for later use. In other embodiments of the present invention, the bis (trifluoromethanesulfonyl) imide salt is mixed with a pyridinium salt, optionally an ethylpyridinium cation. Wherein the molar ratio of the anion to the cation substances can be 1: 1-1: 3. Then, the mixture of the two is placed in a glass container to be stirred and reacted for 1-9 hours at 50-300 ℃ for later use.
The inventionEmbodiments may incorporate corroded parts (i.e., AlFxAnd YFxThe component (b) is completely or partially immersed in the first cleaning agent and sufficiently contacted. The contacting with the first cleaning agent is preferably carried out under ultrasonic conditions; the contact can be operated in an environment with the temperature of 30-60 ℃. In addition, the first cleaning agent can be sprayed on the surface of the corroded part through a spray gun for cleaning.
After the first cleaning agent is used for cleaning, the parts can be dried at 40-80 ℃, for example, and then the parts cleaned by the first cleaning agent are contacted with a second cleaning agent to mainly remove ionic liquid and the like remained on the surface of the workpiece, so that the cleaned parts are obtained; the second cleaning agent is a mixture of alcohol and water.
In the second cleaning agent of the present invention, the alcohol is preferably isopropyl alcohol; the water is usually deionized water, and the two are mixed to obtain the second cleaning agent. Specifically, the mass concentration of isopropanol in the second cleaning agent can be 50-98%. In the embodiment of the invention, the parts cleaned by the ionic liquid are cleaned by the second cleaning agent until the residual ionic liquid is washed away. In the embodiment of the invention, the two cleaning agents are used for alternately cleaning N times, wherein N is more than or equal to 1, until the cleaning requirement is met. Preferably, the contact with the first cleaning agent and the contact with the second cleaning agent are alternately performed two or more times. In addition, all cleaning operations can be carried out in an environment of 30-60 ℃.
Compared with the existing wet cleaning method, the pH acid and the alkali of the ionic liquid cleaning agent are closer to neutral, the characteristic of environmental friendliness is shown, and the ionic liquid cleaning agent is suitable for cleaning parts made of different materials; the ionic liquid cleaning agent has good cleaning effect, can be repeatedly used, has long service cycle and is economically advantageous; the technology of the invention can quickly clean the surfaces of the parts (10 min), and is suitable for large-scale popularization and application.
For further understanding of the present application, the wet cleaning method for plasma etching apparatus components provided in the present application is specifically described below with reference to the embodiments. It should be understood, however, that these examples are for the purpose of illustrating the technical solutions of the present invention, and that the detailed embodiments and specific procedures are given for further illustrating the features and advantages of the present invention, but not for limiting the claims of the present invention, and the scope of the present invention is not limited to the following examples.
The chemical raw materials in the embodiment of the invention are all commercially available products.
Example 1
Step S1: providing a semiconductor processing equipment component having a surface with AlF3、YF3One or both of them are common. The parts in this example are liners, and the plasma resistant coating is Al2O3/Y2O3。
Step S2: carrying out first cleaning treatment on the semiconductor processing equipment parts by using a first cleaning agent to remove the AlF3、YF3One or both of the two or a common particle.
The first cleaning agent is ionic liquid, and the preparation process comprises the following steps: mixing bis (trifluoromethanesulfonyl) imide salt with imidazole salt, wherein the imidazole cation is 1-butyl-3-methylimidazole cation. Wherein the molar ratio of the anion and cation substances is 1:1, and the molar concentration is 2 mol/L. Then, the mixture was placed in a 100mL glass vessel and the reaction was stirred at 60 ℃ for 1 hour.
And (3) placing the prepared ionic liquid of the first cleaning agent into a spray can for the lining part, uniformly spraying 20mL of the ionic liquid onto the surface of the lining under the room temperature condition for cleaning, and placing the lining into a drying oven at 60 ℃ for later use after cleaning.
Step S3: removal of AlF3、YF3After one or both of the two or the common particles are washed by using a second washing agent 80 wt% isopropanol water solution;
and after the isopropanol aqueous solution is used for cleaning, the first cleaning agent is used again for carrying out second round cleaning treatment on the semiconductor processing equipment parts, and the parts are cleaned alternately for three times to obtain cleaned parts.
Comparative example 1
Step S1 and step S2 were performed in the same manner as in example 1;
step S3: and repeatedly using the first cleaning agent to perform the 3 rd round cleaning treatment on the parts of the semiconductor processing equipment to obtain cleaned parts.
Comparative example 1 differs from example 1 only in that the parts were not cleaned with the second cleaning agent; the cleaning effect of both is compared with that of fig. 1. Elemental analysis is carried out on the surfaces of the parts before and after cleaning, the cleaning method without using the second cleaning agent still has large fluorine residues, EDS elemental analysis shows that the fluorine-containing atom ratio is about 65%, the cleaning is incomplete, the fluorine content is greatly reduced after the second cleaning agent is used, the fluorine-containing atom ratio is only about 5%, and the cleaning effect is good.
Example 2
Step S1: providing a semiconductor processing equipment component having a surface with AlF3、YF3One or both of them. The parts in this example are insulated windows and the plasma resistant coating is YAG.
Step S2: carrying out first cleaning treatment on the semiconductor processing equipment parts by using a first cleaning agent to remove the AlF3、YF3One or both of the two or a common particle.
The first cleaning agent is ionic liquid, and the preparation process comprises the following steps: mixing bis (trifluoromethanesulfonyl) imide salt with quaternary ammonium salt, wherein the quaternary ammonium cation is 4-ethyl quaternary ammonium cation. Wherein the molar ratio of the anion and cation substances is 1:2, the prepared concentration is 1.2mol/L, and the total concentration is 80 mL. Then, the mixture was placed in a 100mL glass vessel and the reaction was stirred at 100 ℃ for 4 hours.
And (3) placing the prepared ionic liquid of the first cleaning agent into a spraying pot aiming at the insulating window part, uniformly spraying 50mL of the ionic liquid on the surface of the insulating window at room temperature for cleaning, and then placing the insulating window part into a drying oven at 60 ℃ for later use.
Step S3: removal of AlF3、YF3After one or both of the two or the common particles are washed by using a second washing agent 80 wt% isopropanol water solution;
and after the isopropanol aqueous solution is used for cleaning, the first cleaning agent is used again for carrying out second round cleaning treatment on the semiconductor processing equipment parts, and the parts are cleaned alternately for three times to obtain cleaned parts. FIG. 2 is the results of EDS elemental analysis of the fluorine ion content on the surface of the part before and after cleaning with the first and second cleaning agents, and it can be seen from FIG. 2 that the fluorine content on the surface after cleaning with the first and second cleaning agents is significantly reduced.
Example 3
Step S1: providing a semiconductor processing equipment part with AlF on the surface3、YF3One or both of them are common. The parts in this example are liners and the plasma resistant coating is Y2O3/YAG。
Step S2: carrying out first cleaning treatment on the semiconductor processing equipment parts by using a first cleaning agent to remove the AlF3、YF3One or both of the two or a common particle.
The first cleaning agent is ionic liquid, and the preparation process comprises the following steps: the bis (trifluoromethanesulfonyl) imide salt is mixed with a pyridinium salt, the pyridinium cation being selected to be an ethylpyridinium cation. Wherein the molar ratio of the anion and cation substances is 1:1, the concentration is 1.5mol/L, and the total amount is 50 mL. Then, the mixture was placed in a 100mL glass vessel and the reaction was stirred at 100 ℃ for 4 hours.
And (3) placing the prepared ionic liquid of the first cleaning agent into a spray can aiming at the lining part, uniformly spraying 30mL of the ionic liquid onto the surface of the lining for cleaning, and placing the lining into a drying oven at 80 ℃ for later use.
Step S3: AlF removal3、YF3After one or both of the two or the common particles are washed by using a second washing agent 80 wt% isopropanol water solution;
and after the isopropanol aqueous solution is used for cleaning, the first cleaning agent is used again for carrying out second round cleaning treatment on the semiconductor processing equipment parts, and the parts are cleaned alternately for three times to obtain cleaned parts. FIG. 3 shows the results of EDS elemental analysis of the fluorine ion content on the surface of the part before and after the cleaning with the first and second cleaning agents, and it can be seen from FIG. 3 that the fluorine content on the surface after the cleaning with the first and second cleaning agents is significantly reduced.
Example 4
Step S1: providing a semiconductor processing equipment component having a surface with AlF3、YF3One or both of them. The parts in this example are insulating windows and the plasma resistant coating is YAG.
Step S2: carrying out first cleaning treatment on the semiconductor processing equipment parts by using a first cleaning agent to remove the AlF3、YF3One or both of the two or a common particle.
The first cleaning agent is ionic liquid, and the preparation process comprises the following steps: mixing bis (trifluoromethanesulfonyl) imide salt with quaternary ammonium salt, wherein the quaternary ammonium cation is 4-ethyl quaternary ammonium cation. Wherein the molar ratio of the anion and cation substances is 1:2, the prepared concentration is 1.2mol/L, and the total concentration is 80 mL. Then, the mixture was placed in a 100mL glass vessel and the reaction was stirred at 100 ℃ for 4 hours.
And (3) placing the prepared ionic liquid 2L of the first cleaning agent into a container with the volume more than 2 times that of the part to be cleaned aiming at the insulating window part, soaking the part to be cleaned of the insulating window into the container for 1h, and placing the insulating window part into a drying oven at 60 ℃ for later use.
Step S3: AlF removal3、YF3After one or both of the two or the common particles are washed by using a second washing agent 80 wt% isopropanol water solution;
and after the isopropanol aqueous solution is used for cleaning, the first cleaning agent is used again for carrying out second round cleaning treatment on the semiconductor processing equipment parts, and the parts are cleaned alternately for three times to obtain cleaned parts, wherein the fluorine content on the surfaces of the parts is obviously reduced.
The embodiments show that the invention mainly takes the fluorine-containing imine ionic liquid and/or the quaternary ammonium ionic liquid as the cleaning agent to fully contact with the plasma etching equipment part; and then cleaning the part cleaned by the ionic liquid with an alcohol-water solution until the ionic liquid residue is removed to obtain the cleaned part. The ionic liquid cleaning agent provided by the invention is used for cleaning AlF on the surface of a partxAnd YFxHas a high cleaning effect, andthe operation and use are simple, and the surface of the part can be quickly cleaned (less than 10 min). Meanwhile, the pH of the cleaning agent is closer to neutrality and the acidity is controllable, so that the cleaning agent has less damage to parts in the cleaning process and does not cause huge burden on the environment and the operation safety. In addition, the ionic liquid cleaning agent disclosed by the invention can be suitable for cleaning parts made of different materials, can be reused, is long in service cycle and saves cost.
The above description is only a preferred embodiment of the present invention, and it should be noted that various modifications to the embodiments can be implemented by those skilled in the art without departing from the technical principle of the present invention, and these modifications should also be construed as the scope of the present invention to be protected.

Claims (9)

1. A method for cleaning a plasma processing apparatus component, comprising the steps of:
contacting the surface of the plasma processing apparatus component with a first cleaning agent for a time; the plasma resistant coating on the surface of the plasma treatment equipment part is Al2O3、Y2O3YAG, YAM and YAP or their composite forms; presence of AlF on the coating surfacexAnd/or YFxA particulate matter;
contacting the surface of the part contacted with the first cleaning agent with a second cleaning agent to mainly remove the residual first cleaning agent to obtain a cleaned part;
the first cleaning agent is one or more of fluorine-containing imine ionic liquid and quaternary amine ionic liquid; the second cleaning agent is a mixture of alcohol and water; the ionic liquid is used for coating the AlF on the surface of the plasma processing equipment partxAnd YFxCleaning and eliminating to obtain initial ionic liquid and AlFx、YFxNew complexation is formed, and further a new ionic liquid structure is formed.
2. The cleaning method according to claim 1, wherein the fluorine-containing imide ionic liquid is characterized in that the anion is bis (trifluoromethanesulfonyl) imide anion, and the cation is imidazole cation, quaternary amine cation or pyridine cation.
3. The cleaning method as claimed in claim 2, wherein the cation in the fluorine-containing imine ion liquid is 1-butyl-3-methylimidazole cation, 4-ethyl quaternary amine cation or ethyl pyridine cation.
4. The cleaning method of claim 1, wherein the alcohol is isopropyl alcohol; the mass concentration of isopropanol in the second cleaning agent is 50-98%.
5. The cleaning method of claim 1, wherein the contacting with the first cleaning agent and the contacting with the second cleaning agent are independently by dipping and/or spraying.
6. The cleaning method according to claim 1, wherein the contacting is operated in an environment having a temperature of 30 to 60 ℃; the contact with the first cleaning agent and the contact with the second cleaning agent are alternately carried out more than twice.
7. The cleaning method of claim 1, wherein the contacting with the first cleaning agent is performed under ultrasonic conditions.
8. A cleaning method according to any one of claims 1 to 7, wherein the total time of the cleaning method does not exceed 10 min.
9. The cleaning method of any one of claims 1 to 7, wherein the plasma processing apparatus component comprises one or more of a gas showerhead, a liner, an electrostatic chuck, and an insulating window.
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