CN112582252A - Method for forming semiconductor structure and semiconductor structure - Google Patents

Method for forming semiconductor structure and semiconductor structure Download PDF

Info

Publication number
CN112582252A
CN112582252A CN201910922135.6A CN201910922135A CN112582252A CN 112582252 A CN112582252 A CN 112582252A CN 201910922135 A CN201910922135 A CN 201910922135A CN 112582252 A CN112582252 A CN 112582252A
Authority
CN
China
Prior art keywords
semiconductor substrate
plasma
passivation layer
oxygen
radio frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910922135.6A
Other languages
Chinese (zh)
Inventor
洪政源
田伟辰
黄俊凯
叶昌鑫
吴以德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Metal Industries Research and Development Centre
Original Assignee
Metal Industries Research and Development Centre
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metal Industries Research and Development Centre filed Critical Metal Industries Research and Development Centre
Priority to CN201910922135.6A priority Critical patent/CN112582252A/en
Publication of CN112582252A publication Critical patent/CN112582252A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a method for forming a semiconductor structure and the semiconductor structure. The plasma source used in the surface treatment of the semiconductor substrate by the rf plasma apparatus contains an oxygen element gas, and the spectral intensity corresponding to 777 nm in the plasma formed by the rf plasma apparatus is about 0.5 to 2 times the spectral intensity corresponding to 844 nm. The invention can ensure that the formed passivation layer at least has the characteristics of low thickness, high uniformity and the like, thereby improving the product yield of the semiconductor structure.

Description

Method for forming semiconductor structure and semiconductor structure
Technical Field
The present invention relates to a method of forming a semiconductor structure, and more particularly, to a method of forming a semiconductor structure having a passivation layer with low thickness and high uniformity and a semiconductor structure.
Background
Passivation structures and processes are important structures and processes that are essential in the semiconductor industry. Taking the solar cell industry as an example, conventional Back Surface Field (BSF) solar cells, such as a Passivated emitter and back electrode Passivated (PERC) solar cell, a heterojunction with intrinsic thin layer (HIT) solar cell, or a tunnel oxide Passivated (top) solar cell, have passivation layers. For example, the tunneling passivation layer thin film used in the high-efficiency silicon-based solar cell structure is manufactured by a chemical wet process or a high temperature oxidation process, but the control of the thickness and uniformity of the tunneling passivation layer thin film is examined, and the problem of poor yield is easily caused in the mass production process.
Disclosure of Invention
The present invention is directed to a method for forming a semiconductor structure and a semiconductor structure, in which a radio frequency plasma device is used to perform a surface treatment on a semiconductor substrate and a ratio of spectral intensities corresponding to specific wavelengths is controlled, so that a formed passivation layer has at least characteristics of low thickness and high uniformity, thereby improving a product yield.
In accordance with the above objects, a method for forming a semiconductor structure includes providing a semiconductor substrate and surface treating the semiconductor substrate using an rf plasma apparatus to form a passivation layer on one side of the semiconductor substrate. The plasma source used in the surface treatment of the semiconductor substrate by the rf plasma apparatus contains an oxygen element gas, and the spectral intensity corresponding to 777 nm in the plasma formed by the rf plasma apparatus is about 0.5 to 2 times the spectral intensity corresponding to 844 nm.
According to an embodiment of the present invention, in the plasma formed by the RF plasma apparatus, the spectral intensity corresponding to 777 nm is about 0.67 to 1.5 times the spectral intensity corresponding to 844 nm.
According to another embodiment of the present invention, the oxygen element gas is oxygen or ozone.
According to another embodiment of the present invention, the purity of the oxygen gas is at least 99.99%.
According to another embodiment of the present invention, the method for forming a semiconductor structure further comprises: when the semiconductor substrate is subjected to surface treatment, gas which does not generate deposition substances with oxygen or silicon is introduced into the radio frequency plasma equipment.
According to another embodiment of the present invention, the gas that does not generate a deposition substance with oxygen or silicon comprises helium, neon, argon, krypton, xenon, radon, hydrogen or a combination thereof.
According to another embodiment of the present invention, the rf plasma apparatus is configured to perform surface treatment on the semiconductor substrate using microwave frequency of about 13.56MHz, 27.12MHz, or 40.68 MHz.
According to another embodiment of the present invention, the semiconductor substrate is a doped crystalline silicon substrate, and the passivation layer is a silicon oxide film.
According to another embodiment of the present invention, the semiconductor substrate is a P-type, N-type or intrinsic semiconductor substrate.
In accordance with the above objects, the present invention further provides a semiconductor structure comprising a semiconductor structure and a passivation layer. The semiconductor substrate includes a side. A passivation layer formed on the side by radio frequency plasma equipment, having a thickness uniformity of more than 90% and a defect density of less than 1011Per square centimeter. The RF plasma apparatus includes a plasma source, and the plasma source includes an elemental oxygen gas.
The method has the advantages that the surface of the semiconductor substrate is treated by using the radio frequency plasma equipment, and the proportion of the spectral intensity corresponding to the specific wavelength is controlled, so that the formed passivation layer at least has the characteristics of low thickness, high uniformity and the like, and the product yield of the semiconductor structure is further improved.
Drawings
For a more complete understanding of the embodiments and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a solar cell structure according to an embodiment of the invention;
FIG. 2 is an illustration of an RF plasma apparatus for surface treating a semiconductor substrate in accordance with an embodiment of the present invention;
FIG. 3 is a graph of a spectrum of an optical sensing spectrometer used in surface treatment of a semiconductor substrate using an RF plasma apparatus;
FIG. 4 is a schematic view of another semiconductor structure formed in accordance with another embodiment of the present invention; and
fig. 5 is a cross-sectional view of a solar cell structure formed in accordance with an embodiment of the present invention.
Description of the main reference numerals:
100. 400-semiconductor structure, 102, 402, S-semiconductor substrate, 104, 404, 508, 510-passivation layer, 200-rf plasma device, 202-electrostatic chuck, 204-rf signal source, 206-electrode, 208-reaction chamber, 210-vacuum system, 212-optical window, 214-plasma region, 500-solar cell structure, 502-doped crystalline silicon substrate, 502A-first side, 502B-second side, 504-tunnel silicon oxide film, 506-doped crystalline silicon film, 512-anti-reflection layer, 514, 516-electrode layer.
Detailed Description
Embodiments of the invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the invention.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, components, regions and/or sections, these elements, components, regions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region and/or section from another element, component, region and/or section.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the claims. The singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, the spatially relative terms are used to describe various orientations of the elements in use or operation and are not intended to be limited to the orientations shown in the figures. Elements may also be oriented in other ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted in a similar manner.
Referring to fig. 1, fig. 1 is a schematic diagram of a semiconductor structure 100 according to an embodiment of the invention. The semiconductor structure 100 includes a semiconductor substrate 102 and a passivation layer 104, wherein the passivation layer 104 is formed on one side of the semiconductor substrate 102. In the present embodiment, the passivation layer 104 is formed on one side of the semiconductor substrate 102 by performing a surface treatment on the semiconductor substrate 102 using an rf plasma apparatus.
If the semiconductor substrate 102 is a silicon substrate and the plasma source introduced by the rf plasma apparatus is oxygen, ozone or other gas composed of oxygen elements, the oxygen ions in the plasma state combine with silicon atoms broken bonds on the surface of the semiconductor substrate 102 to form silicon oxide, thereby forming a silicon oxide film, i.e., the passivation layer 104 shown in fig. 1. The semiconductor substrate 102 may be a P-type, N-type or intrinsic semiconductor substrate, and the silicon oxide film formed by the RF plasma device may have an average thickness of less than 3 nm, such as 0.5 nm to 2 nm, a uniformity of more than 90%, and a defect density of less than 1011Per square centimeter. The oxygen gas introduced into the rf plasma apparatus has a purity of at least 99.99% to ensure uniformity of the passivation layer 104.
Fig. 2 is a diagram illustrating an example of an rf plasma apparatus 200 for performing a surface treatment on a semiconductor substrate S according to an embodiment of the present invention. The rf plasma apparatus performs a deposition process using a plasma technology, and may be, for example, an electron cyclotron resonance chemical vapor deposition (ECR-CVD) apparatus, a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus, an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatus, an Atmospheric Pressure Chemical Vapor Deposition (APCVD) apparatus, or other suitable apparatuses. In the rf plasma apparatus 200 shown in fig. 2, an electrostatic chuck 202 is used for fixing and carrying a semiconductor substrate S, and an rf signal source 204 is electrically connected to the electrostatic chuck 202 (including an electrode) and an electrode 206 located at the opposite side of the electrostatic chuck 202 for providing an rf voltage to form an ac electric field between the electrostatic chuck 202 and the electrode 206, so that a plasma source introduced into a reaction chamber 208 is subjected to the ac electric field to generate an ionization collision reaction, thereby forming a plasma. The plasma source to the rf plasma device 200 may be oxygen, ozone, or other elemental oxygen gas. The purity of the oxygen gas introduced into the rf plasma apparatus is at least 99.99% to ensure uniformity of the passivation layer generated on the semiconductor substrate S. In some embodiments, a gas that does not generate a deposition species with oxygen or silicon may be introduced into the rf plasma apparatus 200 during the surface treatment of the semiconductor substrate S, including helium, neon, argon, krypton, xenon, radon, hydrogen, combinations thereof, and/or other suitable gases. In addition, the RF plasma apparatus 200 also includes a vacuum system 210 that can evacuate the byproducts generated within the reaction chamber 208.
Referring again to fig. 2, the rf plasma apparatus 200 processes the semiconductor substrate 102 to form the passivation layer 104. In one embodiment, the semiconductor substrate 102 and the passivation layer 104 to be formed are a silicon substrate and a silicon oxide film, respectively, and the Frequency used by the RF plasma apparatus 200 may be about 13.56MHz or an integer multiple thereof, such as about 27.12MHz or about 40.68MHz, or a Very High Frequency (VHF) above 60 MHz. In one embodiment, the internal pressure of the reaction chamber 208 of the rf plasma apparatus 200 may be about 100 torr (torr) to 1000 torr, and the internal temperature of the reaction chamber 208 may be room temperature to 300 degrees celsius. In one embodiment, the rf signal source 204 of the rf plasma apparatus 200 may generate a power density of about 1 mw/cm to about 50 mw/cm, and the distance D between the semiconductor substrate 102 (corresponding to the semiconductor substrate S of fig. 2) and the electrode 206 may be about 5 mm to about 30 mm.
In addition, the RF plasma apparatus 200 of FIG. 2 further has an optical window 212, which allows an Optical Emission Spectrometer (OES) or other apparatus to collect the spectral signal of the plasma light emitted from the plasma region 214 and display the data in real time. In the plasma formed by the RF plasma apparatus 200, O+The ions emit light having a wavelength of about 777 nm, O+The ions emit light at wavelengths of about 844 nm and 518 nm, and O2 +The ions emit light at wavelengths of approximately 525.7 nm and 559.1 nm. In the embodiment of the invention, when the passivation layer is formed on the semiconductor substrate S, the spectral intensity corresponding to 777 nm is about 0.5 to 2 times of the spectral intensity corresponding to 844 nm, and thus, the thickness uniformity of the passivation layer can be improved and the defect density of the passivation layer can be reduced. In one embodiment, the passivation layer may have an average thickness of less than 3 nm, a thickness uniformity of more than 90%, and a defect density of less than 1011Per square centimeter. As used herein, thickness uniformity refers to 100% - (| actual thickness-average thickness |/average thickness). In some embodiments, when the passivation layer is formed on the semiconductor substrate S, the spectral intensity corresponding to 777 nm is about 0.67 to 1.5 times the spectral intensity corresponding to 844 nm, so as to precisely control the thickness of the formed passivation layer.
It should be noted that the rf plasma device 200 shown in fig. 2 is merely an example. In other embodiments, the surface treatment of the semiconductor substrate 102 to form the passivation layer 104 may be performed by other suitable rf plasma equipment according to the above-mentioned environment settings.
FIG. 3 is a view illustrating the surface treatment of a semiconductor substrate S using the RF plasma apparatus 200The optical sensing spectrometer displays a spectrum pattern when processed (i.e., a passivation layer is formed on the semiconductor substrate S). As shown in fig. 3, at second 0, the passivation layer began to form and this time corresponded to 777 nm of O+The spectral intensity of the ion (in arbitrary units) is slightly higher than that of O corresponding to 844 nm2The spectral intensity of the molecule and before the passivation layer formation step is completed, e.g., during the 0 th to 120 th seconds, corresponds to 777 nm of O+Spectral intensity of ion and corresponding 844 nm O2The ratio of the spectral intensities of the molecules was maintained approximately at 0.5 to 2 times. After the surface treatment process for the semiconductor substrate S is completed, the average thickness and uniformity of the resulting passivation layer are about 1.8 nm and 90%, respectively, i.e., the thickness of the passivation layer is 1.8 nm ± 10%.
FIG. 4 is a schematic diagram of a semiconductor structure 400 formed in accordance with another embodiment of the present invention. The semiconductor structure 400 includes a semiconductor substrate 402 and a passivation layer 404, wherein one side of the semiconductor substrate 402 is saw-toothed, and the passivation layer 404 is formed on the side of the semiconductor substrate 402 having saw-toothed shape. Before forming the passivation layer 404, an etching process is performed on the semiconductor substrate 402 to form a saw-tooth structure on one side of the semiconductor substrate 402. The height and bottom width of the saw-tooth like structures formed via the etching process may be about 2 to 8 microns. In addition, the passivation layer 404 of fig. 4 is formed on the side of the semiconductor substrate 402 having the saw-toothed structure by surface-treating the semiconductor substrate 402 using a radio frequency plasma apparatus. When the semiconductor substrate 402 is a silicon substrate and the plasma source introduced by the RF plasma device is oxygen or ozone, the passivation layer 404 is a silicon oxide thin film with an average thickness of less than 3 nm, such as 0.5 nm to 2 nm, a uniformity of more than 90%, and a defect density of less than 1011Per square centimeter.
The semiconductor structures 100, 400 formed by embodiments of the present invention may further be used in many types of products. The following description takes the example of forming a solar cell structure based on the semiconductor structure 400. Referring to fig. 5, fig. 5 is a cross-sectional view of a solar cell structure 500 formed according to an embodiment of the invention. As shown in fig. 5, the solar cell structure 500 is a tunnel oxide passivated contact (topon) solar cell structure. In addition to the doped crystalline silicon substrate 502 and the tunnel oxide silicon film 504 corresponding to the semiconductor substrate 402 and the passivation layer 404, respectively, of fig. 4, the solar cell structure 500 also includes a doped crystalline silicon film 506, passivation layers 508, 510, an anti-reflection layer 512, and electrode layers 514, 516.
The doped crystalline silicon substrate 502 can be a P-type doped crystalline silicon substrate, an N-type doped crystalline silicon substrate, or an intrinsic doped crystalline silicon substrate. The tunnel oxide film 504 is formed on the first side 502A of the doped crystalline silicon substrate 502 by subjecting the first side 502A of the doped crystalline silicon substrate 502 to a surface treatment by a radio frequency plasma device. The tunnel oxide film 504 may have a thickness of less than 3 nm, such as about 0.5 nm to 2 nm, a uniformity of more than 90%, and a defect density of less than 1011Per square centimeter. The doped crystalline silicon film 506 may be formed on the tunneling silicon oxide film 504 by performing a chemical vapor deposition process, and may have a thickness of about 50 nm and a crystallinity of about 50% to 90%. In performing the chemical vapor deposition process to form the doped crystalline silicon film 506, the process pressure may be about 400 torr, the rf power may be about 30 mw/cm, and the substrate temperature may be about 300 ℃. The doped crystalline silicon thin film 506 may comprise a single crystalline material or a polycrystalline material. In addition, the doped crystalline silicon film 506 may be an N-type doped crystalline silicon film or a P-type doped crystalline silicon film corresponding to the type of the doped crystalline silicon substrate 502.
Passivation layers 508, 510 and anti-reflection layer 512 are sequentially formed on the second side 502B of the doped crystalline silicon substrate 502 and conform to the saw-tooth structure of the doped crystalline silicon substrate 502. Each passivation layer 508, 510 may be a silicon nitride film, a silicon oxide film, an aluminum oxide film, or a hafnium oxide film. For example, the passivation layers 508, 510 may be an aluminum oxide film and a silicon oxide film, respectively. In addition, each passivation layer 508, 510 may be formed by performing a chemical vapor deposition (cvd) process, a Physical Vapor Deposition (PVD) process, or an Atomic Layer Deposition (ALD) process. The anti-reflection layer 512 is on the passivation layer 510, which may be formed by performing a deposition process or a coating process, but is not limited thereto.
Electrode layers 514, 516 are located on the doped crystalline silicon thin film 506 and on the second side 502B of the doped crystalline silicon substrate 502, respectively, wherein the electrode layer 516 extends upward and through the passivation layers 508, 510 and the anti-reflection layer 512. Each of the electrode layers 514, 516 can be formed by evaporation, sputtering or electroplating, or by screen printing, but is not limited thereto.
It should be noted that embodiments of the present invention can be applied to the production of many types of semiconductor structures, which are not limited to tunnel oxide passivated contact solar cell structures as described above. In other words, the embodiments of the present invention can also be applied to the fabrication of other types of solar cell structures, such as Back Surface Field (BSF) solar cells, Passivated emitter and back electrode (PERC) solar cells, heterojunction with intrinsic thin layer (HIT) solar cells, and the like, or to the fabrication of other semiconductor structures, such as floating gate memory device structures or other suitable semiconductor structures.
As can be seen from the above description, the embodiment of the invention performs surface treatment on a semiconductor substrate by using the rf plasma apparatus and controls the ratio of the spectral intensities corresponding to specific wavelengths, and thus, the passivation layer formed has at least the characteristics of low thickness and high uniformity, thereby improving the product yield.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.

Claims (10)

1. A method of forming a semiconductor structure, comprising:
providing a semiconductor substrate; and
performing surface treatment on the semiconductor substrate by using radio frequency plasma equipment to form a passivation layer on one side of the semiconductor substrate;
wherein, the plasma source used when the radio frequency plasma device carries out surface treatment on the semiconductor substrate comprises oxygen element gas, and in the plasma formed by the radio frequency plasma device, the spectrum intensity corresponding to 777 nanometers is 0.5 times to 2 times of the spectrum intensity corresponding to 844 nanometers.
2. The method of claim 1, wherein the spectral intensity corresponding to 777 nanometers is between 0.67 and 1.5 times the spectral intensity corresponding to 844 nanometers in the plasma formed by the rf plasma device.
3. The method of claim 1, wherein the elemental oxygen gas is oxygen or ozone.
4. The method of claim 1 or 3, wherein the elemental oxygen gas has a purity of at least 99.99%.
5. The method of claim 1, further comprising:
and when the semiconductor substrate is subjected to surface treatment, introducing gas which does not generate deposition substances with oxygen or silicon into the radio frequency plasma equipment.
6. The method of claim 5, wherein the gas that does not produce a deposition species with oxygen or silicon comprises helium, neon, argon, krypton, xenon, radon, hydrogen, or combinations thereof.
7. The method of claim 1, wherein the rf plasma apparatus surface-treats the semiconductor substrate with microwaves having a frequency of 13.56MHz, 27.12MHz, or 40.68 MHz.
8. The method of claim 1, wherein the semiconductor substrate is a doped crystalline silicon substrate and the passivation layer is a silicon oxide film.
9. The method of claim 1, wherein the semiconductor substrate is a P-type, N-type, or intrinsic type semiconductor substrate.
10. A semiconductor structure, comprising:
a semiconductor substrate comprising a side; and
a passivation layer formed on the one side by a radio frequency plasma apparatus, wherein a thickness uniformity of the passivation layer is above 90%, and a defect density of the passivation layer is below 1011Per square centimeter;
wherein the RF plasma apparatus comprises a plasma source comprising an elemental oxygen gas.
CN201910922135.6A 2019-09-27 2019-09-27 Method for forming semiconductor structure and semiconductor structure Pending CN112582252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910922135.6A CN112582252A (en) 2019-09-27 2019-09-27 Method for forming semiconductor structure and semiconductor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910922135.6A CN112582252A (en) 2019-09-27 2019-09-27 Method for forming semiconductor structure and semiconductor structure

Publications (1)

Publication Number Publication Date
CN112582252A true CN112582252A (en) 2021-03-30

Family

ID=75109698

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910922135.6A Pending CN112582252A (en) 2019-09-27 2019-09-27 Method for forming semiconductor structure and semiconductor structure

Country Status (1)

Country Link
CN (1) CN112582252A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116047859A (en) * 2023-03-02 2023-05-02 广州新锐光掩模科技有限公司 Method for manufacturing photomask passivation layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186586A (en) * 2002-12-05 2004-07-02 Macronix Internatl Co Ltd Method for forming fluorocarbon polymer film on substrate using passivity layer
JP2011243855A (en) * 2010-05-20 2011-12-01 Kyocera Corp Solar cell element and method of manufacturing the same and solar cell module

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186586A (en) * 2002-12-05 2004-07-02 Macronix Internatl Co Ltd Method for forming fluorocarbon polymer film on substrate using passivity layer
JP2011243855A (en) * 2010-05-20 2011-12-01 Kyocera Corp Solar cell element and method of manufacturing the same and solar cell module

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SANNDEEP S.S.: "Novel plasma processes for surface passivation and light trapping in crystalline silicon solar cells", pages 58 - 70 *
Y.SAITO ETAL: "Advantage of radical oxidation for improving reliability of ultra-thin gate oxide", IEEE.XPLORE. RESTRICTIONS APPLY., pages 176 - 177 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116047859A (en) * 2023-03-02 2023-05-02 广州新锐光掩模科技有限公司 Method for manufacturing photomask passivation layer

Similar Documents

Publication Publication Date Title
KR101014858B1 (en) Method and apparatus for growing plasma atomic layer
US6165916A (en) Film-forming method and film-forming apparatus
CN105679665B (en) Non-crystalline silicon A-si seasoning effect for improving sin run-to-run uniformity
JP4557400B2 (en) Method for forming deposited film
US7589002B2 (en) Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
JP2008166366A (en) Semiconductor layer manufacturing method and semiconductor layer manufacturing device and semiconductor device manufactured by using these
JP2012149278A (en) Method for producing silicon-containing film
CN113481487A (en) Solar cell and back surface PECVD method and application thereof
JP2000068227A (en) Method for processing surface and device thereof
CN112582252A (en) Method for forming semiconductor structure and semiconductor structure
US8931433B2 (en) Plasma processing apparatus
TWI706576B (en) Method of forming a semiconductor structure and semiconductor structure
KR20040096380A (en) Method for cleaning of chamber for depositing metal oxide and apparatus for depositing to performing the same
JP2000114257A (en) Manufacture of semiconductor device
JP4194466B2 (en) Plasma process apparatus and electronic device manufacturing method using the same
JP4133490B2 (en) Deposition method
Sumiya et al. Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma
US20020056415A1 (en) Apparatus and method for production of solar cells
JP4470227B2 (en) Film forming method and thin film transistor manufacturing method
JP4515440B2 (en) Method for manufacturing thin film transistor
JPH06330305A (en) Film forming method by sputtering
JP3137532B2 (en) Plasma CVD equipment
JPH0778759A (en) Method and device of manufacturing semiconductor material
JP3272681B2 (en) Solar cell manufacturing method
US20240128089A1 (en) Method to selectively etch silicon nitride to silicon oxide using water crystallization

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20210330

WD01 Invention patent application deemed withdrawn after publication