CN110908239A - Imprint mold, preparation method of nano-imprint film layer and electronic device - Google Patents

Imprint mold, preparation method of nano-imprint film layer and electronic device Download PDF

Info

Publication number
CN110908239A
CN110908239A CN201911273240.8A CN201911273240A CN110908239A CN 110908239 A CN110908239 A CN 110908239A CN 201911273240 A CN201911273240 A CN 201911273240A CN 110908239 A CN110908239 A CN 110908239A
Authority
CN
China
Prior art keywords
imprinting
cavity structure
film layer
cavity
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911273240.8A
Other languages
Chinese (zh)
Inventor
路彦辉
李多辉
周雪原
郭康
谷新
谭伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201911273240.8A priority Critical patent/CN110908239A/en
Publication of CN110908239A publication Critical patent/CN110908239A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

The invention relates to the technical field of electronic equipment, and discloses an imprinting mold, a preparation method of a nano-imprinting film and an electronic device. In the imprinting mould, the volume difference of each cavity structure is very small, when the imprinting mould is used for imprinting, the volume difference of imprinting glue entering each cavity structure of the imprinting mould is small, and the thickness uniformity of residual imprinting glue under the imprinting mould is good.

Description

Imprint mold, preparation method of nano-imprint film layer and electronic device
Technical Field
The invention relates to the technical field of electronic equipment, in particular to an imprinting mold, a preparation method of a nano-imprinting film and an electronic device.
Background
The nano-imprinting technology is used as a novel high-efficiency and high-yield micro-nano structure preparation technology, is widely applied to the fields of photoelectric devices, semiconductors and the like, and at present, for a structure with a non-periodic structure size change, because the sizes of cavities of molds are different, the filling amount of a glue material is different, the difference of residual glue at different positions is large, the defect that the residual glue is not uniform after imprinting is caused, and further, the residual glue is not uniform for a while, so that the imprinted pattern cannot be transferred to a target film layer. However, Metalens devices in the current super-surface technology require different sizes and non-periodic structures to be processed for phase adjustment, which poses a challenge to the existing nano-imprint process. How to make the residual glue after nanoimprint uniform and further obtain variable period structures with the same height becomes a problem which needs to be solved urgently at present.
Disclosure of Invention
The invention discloses an imprinting mould, a preparation method of a nano-imprinting film and an electronic device, wherein the volume difference of each cavity structure in the imprinting mould is very small, and when the imprinting mould is used for imprinting, the volume difference of imprinting glue entering each cavity structure of the imprinting mould is small, so that the uniformity of the thickness of residual imprinting glue under the imprinting mould is favorably improved, the uniformity of the thickness of the residual imprinting glue under the imprinting mould is better, an image is favorably transferred to a target film in subsequent preparation, and the quality of a pattern structure of the target film is improved.
In order to achieve the purpose, the invention provides the following technical scheme:
an imprint mold, comprising: the mould body, one side of mould body is equipped with a plurality of cavity structures, the mould body is equipped with the surface formation coining face of a plurality of cavity structure one sides, along being on a parallel with the direction of coining face, a plurality of cavity structures include two kinds at least cross sectional area mutually different's cavity structures, wherein, among the two kinds of arbitrary cross sectional area inequality cavity structures in a plurality of cavity structures, cross sectional area is big as first cavity structure, and cross sectional area is little as second cavity structure, along the perpendicular to the direction of coining face, the degree of depth size of first cavity structure is less than the degree of depth size of second cavity structure.
In the stamping die, one side of the die body is provided with a plurality of cavity structures for stamping, the surface of one side of the die body, which is provided with the cavity structures, forms a stamping surface, stamping openings of the cavity structures are all positioned on the stamping surface, because the stamping die needs to stamp different patterns, at least two cavity structures with different cross-sectional areas in the cross-sectional areas of the cavity structures are arranged along the direction parallel to the stamping surface, the cavity structures with different cross-sectional areas have different opening diameter sizes, namely, the cavity structures with at least two different cross-sectional areas are arranged on the die body, and in the cavity structures on the stamping die, the depth of the cavity structure with the relatively larger cross-sectional area is smaller than the depth of the cavity structure with the relatively smaller cross-sectional area, in two cavity structures with different cross-sectional areas, the difference of the volumes of the two cavity structures with different cross-sectional areas can be reduced by setting the depths to be different, so that the difference of the volumes of the two cavity structures with different cross-sectional areas is very small, even the two cavity structures with different cross-sectional areas are the same, when the impressing die is applied to carry out impressing operation, because the difference of the volumes of the two cavity structures with different cross-sectional areas is very small, the difference of the volumes of the impressing glue embedded into the cavity structures of the impressing die is not much, the difference of the thicknesses of residual impressing glue layers at all positions under the impressing die is very small, compared with the impressing die in the prior art, the impressing die can effectively improve the uniformity of the thickness of the residual impressing glue under the impressing die, the thickness of the residual glue film layer of the impressing glue under, so that the target film layer obtains a perfect graph structure.
Therefore, in the imprinting mold, the volume difference of each cavity structure is small, when the imprinting mold is used for imprinting, the volume difference of the imprinting glue entering each cavity structure of the imprinting mold is small, the uniformity of the residual imprinting glue thickness under the imprinting mold is improved, the uniformity of the residual imprinting glue thickness under the imprinting mold is good, images are transferred to a target film layer well in subsequent preparation, and the pattern structure quality of the target film layer is improved.
Optionally, the first cavity structure and the second cavity structure have the same volume.
Optionally, the cavity structures adjacent to each other and having the same cross-sectional area are arranged periodically.
Optionally, an arrangement period of the first cavity structure and an arrangement period of the second cavity structure are different from each other.
Optionally, the cavity structure is a bar.
Optionally, the cavity structure is cylindrical.
The invention also provides a preparation method of the nano-imprinting film layer, which comprises the following steps:
sequentially forming a target film layer and an etching barrier layer on a substrate;
forming an imprinting glue layer on the etching barrier layer, and imprinting the imprinting glue layer by using any one of the imprinting molds provided in the above technical scheme to form an imprinting glue pattern with the same cavity structure on the imprinting mold;
etching the etching barrier layer by taking the imprinting glue pattern as a mask plate so as to pattern the etching barrier layer;
etching the target film layer by taking the patterned etching barrier layer as a mask plate so as to pattern the target film layer;
and removing the residual etching barrier layer.
Optionally, a thickness dimension of the target film layer is greater than a depth dimension of each cavity structure on the imprint mold.
Optionally, the target film layer is a conductive film layer.
The invention also provides an electronic device which comprises a substrate base plate and the functional film layer with uniform thickness arranged on the substrate base plate, wherein the functional film layer is prepared by applying any one of the preparation methods of the nano-imprinting film layer provided in the technical scheme.
Drawings
Fig. 1 is a schematic top view of an imprint mold according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the imprint mold of FIG. 1 taken along A-A;
fig. 3-8 are schematic structural changes of each film layer during a process of manufacturing a nanoimprint film layer according to an embodiment of the present invention;
icon: 1-a mould body; 2-a substrate base plate; 3-a target membrane layer; 4-etching the barrier layer; 5-imprinting the adhesive layer; 11-light structure; 12-stamping the surface; 111-a first cavity structure; 112-second cavity structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, an embodiment of the present invention provides an imprint mold including: mold body 1, one side of mold body 1 is equipped with a plurality of cavity structures 11, mold body 1 is equipped with the surface formation impression face 12 of a plurality of cavity structures 11 one side, along the direction that is on a parallel with the impression face, a plurality of cavity structures 11 include two kinds at least different cavity structures of cross sectional area each other, wherein, in the two kinds of arbitrary cross sectional area inequality cavity structures in a plurality of cavity structures 11, cross sectional area is big as first cavity structure 111, cross sectional area is little as second cavity structure 112, along the direction of perpendicular to impression face, the degree of depth dimension H of first cavity structure 1111Is smaller than the depth dimension H of the second cavity structure 1122
In the above-mentioned imprint mold, a plurality of the imprint molds are provided on one side of the mold bodyA cavity structures for impression, the mould body sets up the surface formation impression face of cavity structures one side, each cavity structures's impression opening all is located the impression face, because the impression mould needs the impression to go out different patterns, along the direction that is on a parallel with the impression face, at least two kinds of cavity structures of cross sectional area variation in size are in a plurality of cavity structures's cross sectional area, the cavity structures of cross sectional area difference, cavity structures's opening diameter size is inequality, that is, be provided with on the mould body and have two kinds of cavity structures of different diameter size at least, because in a plurality of cavity structures on the impression mould, in the cavity structures of arbitrary two kinds of different cross sectional area sizes, the degree of depth of cavity structure that cross sectional area is great relatively (as shown in figure 2 "H1") a depth of the cavity structure (shown as" H "in FIG. 2) that is relatively small compared to the cross-sectional area2") is small, the difference of the volumes of the two cavity structures with different cross-sectional areas can be reduced by setting the depths to be different in the two cavity structures with different cross-sectional areas, so that the difference of the volumes of the two cavity structures with different cross-sectional areas is very small, even the two cavity structures with different cross-sectional areas are the same, when the imprinting mold is applied for imprinting operation, as the difference of the volumes of the two cavity structures with different cross-sectional areas is very small, the difference of the thicknesses of the residual imprinting glue layers at various positions under the imprinting mold is very small, compared with the imprinting mold in the prior art, the imprinting mold in the invention can effectively improve the uniformity of the thickness D (shown as 'D' in figures 3 and 4) of the residual imprinting glue under the imprinting mold, so that the residual glue thickness D under the imprinting mold is uniform, the method is favorable for well transferring the image to the target film layer in the subsequent preparation, so that the target film layer can obtain a complete graph structure.
Therefore, in the stamping die, the volume difference of each cavity structure is very small, when the stamping die is used for stamping, the volume difference of stamping glue entering each cavity structure of the stamping die is small, the thickness of residual stamping glue under the stamping die is uniform, images can be favorably transferred to a target film layer in subsequent preparation, and the quality of the graph structure of the target film layer is improved.
Specifically, in the above imprinting mold, the volumes of the first cavity structure 111 and the second cavity structure 112 are the same, that is, the volumes of the cavity structures in the imprinting mold are set to be the same, so that the uniformity of the thickness of the residual imprinting glue below the pressing mold can be further improved, the subsequent preparation is facilitated to transfer an image onto a target film layer well, the quality of the pattern structure of the target film layer is improved, and the target film layer can obtain a complete image structure.
Specifically, as shown in fig. 1, for the distribution of the cavity structures 11 on the imprint mold, the cavity structures 11 that are adjacent to each other and have the same cross-sectional area may be periodically arranged, that is, the imprint mold is divided into at least two regions, each region has a plurality of cavity structures, and the cavity structures in each region are the same and are periodically arranged and distributed, so as to obtain a target pattern that is periodically distributed.
Specifically, with continued reference to fig. 1, in the above-mentioned imprint mold, the arrangement period T of the first cavity structures 1111Different from the arrangement period T2 of the second cavity structures 112, taking any two of the regions divided in the imprint mold as an example for description, if the cross-sectional areas of the cavity structures in the two regions are different, the arrangement periods of the cavity structures in the two regions are set to be different.
It should be noted that the arrangement and distribution manner of the cavity structures on the imprint mold may also have other optional arrangement manners, and the arrangement may be set according to the graphic structure of the target film layer that is actually required to be prepared, which is not limited in this embodiment.
Specifically, according to the pattern structure of the matching target film layer, the cavity structure on the imprint mold may be in a strip shape, and a plurality of cavity structures form a grating structure, or the cavity structure may be in a cylindrical shape, so that a plurality of cavity structures form a predetermined pattern, and the shape of the cavity structure may be in other shapes, which is not limited in this embodiment.
Based on the same inventive concept, as shown in fig. 3 to 8, an embodiment of the present invention further provides a method for preparing a nanoimprint film layer, including:
step S101, sequentially forming a target film layer 3 and an etching barrier layer 4 on a substrate base plate 2;
step S102, as shown in fig. 3 and 4, forming an imprinting glue layer 5 on the etching barrier layer 4, and imprinting the imprinting glue layer 5 by using any one of the imprinting molds provided in the embodiments above to form an imprinting glue pattern having the same cavity structure as that of the imprinting mold;
step S103, combining 5, as shown in FIG. 6, etching the etching barrier layer 4 by using the imprint glue pattern as a mask plate to pattern the etching barrier layer;
step S104, as shown in FIG. 7, etching the target film layer 3 by using the patterned etching barrier layer 4 as a mask plate to pattern the target film layer;
step S105, in combination with step 7, as shown in fig. 8, removes the remaining etching stopper layer 4.
In the preparation method, the volume difference of each cavity structure on the applied imprinting mold is very small, when the imprinting mold is applied for imprinting, the volume difference of the imprinting glue entering each cavity structure of the imprinting mold is small, the thickness of the residual imprinting glue under the imprinting mold is relatively uniform, the image is favorably transferred to the target film layer, and the quality of the graph structure of the target film layer is improved.
Specifically, in the above preparation method, the thickness dimension of the target film layer is greater than the depth dimension of each cavity structure on the imprint mold, that is, the thickness dimension of the target film layer is set to be greater than the maximum depth dimension of the cavity structure on the imprint mold, so that the residual imprint glue under the imprint mold during imprinting is prevented from being too small in thickness, the residual imprint glue under the imprint mold is ensured to have a proper thickness, and the improvement of the uniformity of the residual imprint glue thickness can be facilitated.
Specifically, in the above preparation method, the target film layer is a conductive film layer, wherein the target film layer may also be a non-conductive film layer, and the target film layer is a film layer with a certain function, and a specific pattern structure is required, and the thickness requirements of each part of the pattern structure are consistent, but this embodiment is not limited to a specific type of the target film layer.
Based on the same inventive concept, the embodiment of the invention also provides an electronic device, which comprises a substrate and a functional film layer with uniform thickness arranged on the substrate, wherein the functional film layer is prepared by applying any one of the preparation methods of the nano-imprinting film layer provided in the embodiments.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. An imprint mold, comprising: the mould body, one side of mould body is equipped with a plurality of cavity structures, the mould body is equipped with the surface formation coining face of a plurality of cavity structure one sides, along being on a parallel with the direction of coining face, a plurality of cavity structures include two kinds at least cross sectional area mutually different's cavity structures, wherein, among the two kinds of arbitrary cross sectional area inequality cavity structures in a plurality of cavity structures, cross sectional area is big as first cavity structure, and cross sectional area is little as second cavity structure, along the perpendicular to the direction of coining face, the degree of depth size of first cavity structure is less than the degree of depth size of second cavity structure.
2. The imprint template of claim 1, wherein the first cavity structure is the same volume as the second cavity structure.
3. The imprint template of claim 1, wherein the cavity structures that are adjacent and have the same cross-sectional area are arranged periodically.
4. The imprint mold of claim 3, wherein an arrangement period of the first cavity structure and an arrangement period of the second cavity structure are different from each other.
5. The imprint template of any of claims 1-4, wherein the cavity structure is strip-shaped.
6. The imprint mold of any of claims 1-4, wherein the cavity structure is cylindrical.
7. A method for preparing a nanoimprint film layer, comprising:
sequentially forming a target film layer and an etching barrier layer on a substrate;
forming an imprinting glue layer on the etching barrier layer, and imprinting the imprinting glue layer by using the imprinting mold according to any one of claims 1 to 5 to form an imprinting glue pattern with the same cavity structure on the imprinting mold;
etching the etching barrier layer by taking the imprinting glue pattern as a mask plate so as to pattern the etching barrier layer;
etching the target film layer by taking the patterned etching barrier layer as a mask plate so as to pattern the target film layer;
and removing the residual etching barrier layer.
8. The method of claim 7, wherein a thickness of the target film is greater than a depth of each cavity structure of the imprinting mold.
9. The method of claim 7, wherein the target film layer is a conductive film layer.
10. An electronic device, comprising a substrate and a functional film layer with uniform thickness disposed on the substrate, wherein the functional film layer is prepared by the method of any one of claims 7-9.
CN201911273240.8A 2019-12-12 2019-12-12 Imprint mold, preparation method of nano-imprint film layer and electronic device Pending CN110908239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911273240.8A CN110908239A (en) 2019-12-12 2019-12-12 Imprint mold, preparation method of nano-imprint film layer and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911273240.8A CN110908239A (en) 2019-12-12 2019-12-12 Imprint mold, preparation method of nano-imprint film layer and electronic device

Publications (1)

Publication Number Publication Date
CN110908239A true CN110908239A (en) 2020-03-24

Family

ID=69825226

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911273240.8A Pending CN110908239A (en) 2019-12-12 2019-12-12 Imprint mold, preparation method of nano-imprint film layer and electronic device

Country Status (1)

Country Link
CN (1) CN110908239A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114296168A (en) * 2021-12-08 2022-04-08 中国科学技术大学 Method for manufacturing variable-period narrow grating by using wide-grating nano-imprint template
WO2024046111A1 (en) * 2022-08-31 2024-03-07 上海鲲游科技有限公司 Preparation method for diffractive optical waveguide, diffractive optical waveguide, and imprinting master mold

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095116A (en) * 2005-09-27 2007-04-12 Toshiba Corp Magnetic recording medium stamper, manufacturing method of magnetic recording medium using it, and manufacturing method of magnetic recording medium stamper
CN101013261A (en) * 2006-02-01 2007-08-08 佳能株式会社 Mold for imprint, process for producing minute structure using the mold, and process for producing the mold
JP2010171338A (en) * 2009-01-26 2010-08-05 Toshiba Corp Pattern generation method, and pattern formation method
JP2017199755A (en) * 2016-04-26 2017-11-02 国立研究開発法人産業技術総合研究所 Design method of mold pattern for nanoimprint lithography
JP2017212263A (en) * 2016-05-23 2017-11-30 大日本印刷株式会社 Imprint mold, and pattern forming method using the mold
CN110494804A (en) * 2019-07-11 2019-11-22 京东方科技集团股份有限公司 Metallic mold for nano-imprint and its manufacturing method, the pattern transfer-printing method using metallic mold for nano-imprint

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095116A (en) * 2005-09-27 2007-04-12 Toshiba Corp Magnetic recording medium stamper, manufacturing method of magnetic recording medium using it, and manufacturing method of magnetic recording medium stamper
CN101013261A (en) * 2006-02-01 2007-08-08 佳能株式会社 Mold for imprint, process for producing minute structure using the mold, and process for producing the mold
JP2010171338A (en) * 2009-01-26 2010-08-05 Toshiba Corp Pattern generation method, and pattern formation method
JP2017199755A (en) * 2016-04-26 2017-11-02 国立研究開発法人産業技術総合研究所 Design method of mold pattern for nanoimprint lithography
JP2017212263A (en) * 2016-05-23 2017-11-30 大日本印刷株式会社 Imprint mold, and pattern forming method using the mold
CN110494804A (en) * 2019-07-11 2019-11-22 京东方科技集团股份有限公司 Metallic mold for nano-imprint and its manufacturing method, the pattern transfer-printing method using metallic mold for nano-imprint

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114296168A (en) * 2021-12-08 2022-04-08 中国科学技术大学 Method for manufacturing variable-period narrow grating by using wide-grating nano-imprint template
WO2024046111A1 (en) * 2022-08-31 2024-03-07 上海鲲游科技有限公司 Preparation method for diffractive optical waveguide, diffractive optical waveguide, and imprinting master mold

Similar Documents

Publication Publication Date Title
KR100335070B1 (en) Method for forming micro pattern on substrate by using compression patterning technique
CN101111129B (en) Manufacturing method of printed circuit board
TWI279830B (en) Compliant template for UV imprinting
CN110908239A (en) Imprint mold, preparation method of nano-imprint film layer and electronic device
CN109240041A (en) Spliced impression block and preparation method thereof and caster
CN101112789A (en) Process of production of patterned structure
US20100264560A1 (en) Imprint lithography apparatus and method
CN109188863A (en) The method of film pattern
US8562842B2 (en) Methods of fabricating nanoimprint stamp
US9126260B2 (en) Method of processing a substrate
KR20120129679A (en) Method for manufacturing polymer microfluidic channel, polymer microfluidic channel manufactured by the same and bio-chip comprising the same
KR20060129555A (en) Soft mold and patterning method thereof
US10474028B2 (en) Template, method for fabricating template, and method for manufacturing semiconductor device
KR20090065896A (en) Film substrate formed with fine circuit thereon and manufacturing method thereof
JP4083725B2 (en) Thin film transistor manufacturing method and manufacturing apparatus thereof
TW200922862A (en) Method of fabricating three-dimensional patterned structure using imprinting lithography process and photolithography process
EP2781628A1 (en) Production method for transfer mold, transfer mold produced using same, and component produced using said transfer mold
KR101354972B1 (en) Method for printing conductive circuits using uv rotating molding machine
KR100526053B1 (en) Mold using amorphous fluorine resin and fabrication method thereof
KR100959908B1 (en) Method for dimensional metal thin film
KR20090126461A (en) Process for fabricating the micro mushroom structure
CN106681103B (en) Roller, manufacturing method thereof and stamping equipment
KR20090065899A (en) Film substrate formed with fine circuit thereon and manufacturing method thereof
CN204331287U (en) There is the impressing mould of low surface roughness
KR20090076380A (en) Film substrate formed with fine circuit thereon and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20200324