CN110518440B - Light-emitting device and preparation method thereof - Google Patents

Light-emitting device and preparation method thereof Download PDF

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CN110518440B
CN110518440B CN201810494392.XA CN201810494392A CN110518440B CN 110518440 B CN110518440 B CN 110518440B CN 201810494392 A CN201810494392 A CN 201810494392A CN 110518440 B CN110518440 B CN 110518440B
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resin
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CN110518440A (en
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张红秀
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Shenzhen Appotronics Corp Ltd
Sun Yat Sen University
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Appotronics Corp Ltd
Sun Yat Sen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

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Abstract

The invention discloses a light-emitting device, which comprises a wavelength conversion layer, a metal reflecting layer and a bearing substrate which are sequentially stacked, and also comprises: a first resin layer disposed between the wavelength conversion layer and the metal reflection layer; and the transparent medium layer is arranged between the first resin layer and the metal reflecting layer, the thickness of the transparent medium layer is 20-1000nm, and the surface energy of the transparent medium layer is between the surface energy of the metal reflecting layer and the surface energy of the first resin layer. The metal reflecting layer has better weather resistance, higher bonding force with the wavelength conversion layer and no color cast of output light of the device, and solves the technical problems that the polished surface of the wavelength conversion layer is uneven, the bonding force of the bonding part of the metal reflecting layer and the wavelength conversion layer is weak, the interface sealing performance is poor, the phenomena of oxidation and vulcanization are easy to occur and the reflectivity of visible light in a band is low in the prior art.

Description

Light-emitting device and preparation method thereof
Technical Field
The invention belongs to the technical field of optics, and particularly relates to a light-emitting device and a preparation method thereof.
Background
With the development of display and lighting technologies, light sources with low cost, long life and high efficiency are currently the mainstream research direction. One existing light source solution is to obtain visible light of different wavelengths by using a solid-state light source (e.g., a laser) as excitation light to excite a wavelength conversion material, which combines the advantages of long lifetime of the solid-state light source and low cost, high electro-optic conversion efficiency of the wavelength conversion material. The device that typically carries the wavelength converting material is referred to as a light emitting device, and the above-described effects of the light source can be further enhanced by structural design of the light emitting device.
Fig. 1 shows a prior art reflective light emitting device, in which a metal reflective layer 102 is directly disposed on one side of a wavelength conversion layer 101, and the metal reflective layer 102 is connected to a heat conductive substrate 103. Due to the fact that the compactness of the wavelength conversion layer is poor, the sealing performance of the interface of the combination part of the metal reflection layer and the wavelength conversion layer is poor, the metal reflection layer is easy to contact with oxygen, water vapor, sulfur and the like in the air, and phenomena such as oxidation and vulcanization occur.
In addition, since the wavelength conversion layer is formed by sintering a wavelength conversion material (e.g., phosphor, quantum dot) and glass powder or ceramic powder, it is necessary to bond a reflective layer after polishing one surface thereof. However, the wavelength conversion layer formed by sintering has a complex phase structure, and due to the difference in mohs hardness of different phases (e.g., a phosphor phase and a glass phase), the wear degree of each phase in the subsequent polishing process is different, so that an uneven surface structure is easily formed on the surface of the wavelength conversion layer, and the adhesion force between the reflection layer and the wavelength conversion layer is weak.
Disclosure of Invention
In view of the above background, the present invention is directed to solving the technical problem of the light emitting device reliability degradation caused by the poor interface sealing property and the weak adhesion at the joint of the metal reflective layer and the wavelength conversion layer, and is expected to solve the technical problem by providing a light emitting device according to the following technical solution.
A light emitting device comprises a wavelength conversion layer, a metal reflection layer and a bearing substrate which are sequentially stacked, and further comprises: a first resin layer disposed between the wavelength conversion layer and the metal reflection layer; and the transparent medium layer is arranged between the first resin layer and the metal reflecting layer, the thickness of the transparent medium layer is 20-1000nm, and the surface energy of the transparent medium layer is between the surface energy of the metal reflecting layer and the surface energy of the first resin layer.
Optionally, the refractive index of the first resin layer is smaller than the refractive index of the transparent dielectric layer.
Optionally, a second resin layer is disposed between the metal reflective layer and the carrier substrate.
Optionally, a transition layer is disposed between the metal reflective layer and the second resin layer, and a surface energy of the transition layer is between a surface energy of the metal reflective layer and a surface energy of the second resin layer.
Optionally, the carrier substrate is a ceramic substrate.
Optionally, the roughness of the surface of the first resin layer in contact with the transparent dielectric layer is less than 0.5 μm.
Optionally, the transparent dielectric layer is TiO2Film of said TiO2The film thickness is 18nm, 129nm or 240nm。
Optionally, the visible light transmittance of the first resin layer is greater than 95%.
The invention also provides a preparation method for preparing the light-emitting device, which comprises the following steps:
s10: uniformly mixing a film forming substance, an auxiliary agent, a filler and at least two solvents with different boiling points according to a predetermined proportion to obtain resin slurry;
s20: coating the resin slurry on one side surface of the wavelength conversion layer to form a resin coating, and curing the resin coating to form a resin layer;
s30: depositing a transparent medium layer on the surface of one side of the resin layer, which is far away from the wavelength conversion layer;
s40: and arranging a metal reflecting layer on the transparent medium layer, and arranging a bearing substrate on one side of the metal reflecting layer, which is far away from the wavelength conversion layer.
Optionally, the predetermined ratio is: 17-33 wt% of acrylic resin, 5-15 wt% of silicon oxide, 1-5 wt% of polyethylene, 5-10 wt% of amyl acetate, 5-10 wt% of propylene glycol methyl ether acetate, 10-15 wt% of n-butyl acetate, 10-15 wt% of butyl acetate and 20-25 wt% of poly diisocyanatohexane.
The invention has the following beneficial effects: the first resin layer and the transparent medium layer are arranged between the wavelength conversion layer and the metal reflecting layer, so that the technical problems that the polished surface of the wavelength conversion layer is uneven, the bonding force of the joint of the metal reflecting layer and the wavelength conversion layer is weak, and the interface sealing property is poor, so that the phenomena of oxidation and vulcanization are easy to occur are solved, the weather resistance of the metal reflecting layer is better, and the bonding force with the wavelength conversion layer is higher; the refractive index of the first resin layer and the thickness of the transparent medium layer are designed, so that the light-emitting device has high reflectivity to short-wavelength visible light, and the problem of color cast of output light is solved.
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FIG. 1 is a schematic view of a light-emitting device according to the prior art
FIG. 2 is a schematic view of a light-emitting device according to the present invention
FIG. 3 is a schematic view of a light-emitting device according to another embodiment of the present invention
FIG. 4 is a schematic view of a light-emitting device according to another embodiment of the present invention
Detailed Description
Fig. 2 shows a schematic structural diagram of a light emitting device 200 of the present invention, as shown in fig. 2, the light emitting device includes a wavelength conversion layer 201, a first resin layer 202, a transparent dielectric layer 203, a metal reflective layer 204, and a carrier substrate 205, which are sequentially stacked.
The wavelength conversion layer 201 is formed by sintering a wavelength conversion material such as phosphor powder or quantum dots and glass powder or alumina powder, and can absorb the excitation light and emit the excited light with different wavelengths, for example, the wavelength conversion layer 201 is formed by YAG: Ce3+Phosphor and Al2O3The powder is sintered to absorb blue light with a wavelength of 450nm and emit yellow light with a longer wavelength. It is obvious to those skilled in the art that the light emitting process of the wavelength conversion layer 201 is not limited to absorbing the short wavelength excitation light to emit the long wavelength stimulated light, and the wavelength conversion material may also absorb the long wavelength excitation light to emit the short wavelength stimulated light when the wavelength conversion material is an up-conversion light emitting material.
Since the light emitting device has a multi-layer structure, it is generally necessary to polish one surface of the wavelength conversion layer 201 and then bond the wavelength conversion layer 201 to other layers, and since the wavelength conversion layer 201 is a complex phase material and the polished surface has a convex-concave structure, the first resin layer 202 needs to cover at least one surface of the wavelength conversion layer 201 including the polished surface for filling up the convex-concave structure of the polished surface. Specifically, a coating layer may be formed on the wavelength conversion layer 201 by applying a resin paste, and the flowing property of the paste may well fill up the convex-concave structure and form a resin layer with a flat surface. Since light needs to penetrate the first resin layer 202 and be reflected by the metal reflective layer 204 as much as possible, the transmittance of the first resin layer 202 should be greater than 90%, preferably greater than 95%. In order to avoid the loss caused by the lateral propagation of light in the first resin layer 202 and also to reduce the thermal resistance, the thickness of the first resin layer 202 needs to be as small as possible, but too small a thickness may cause the firmness of other layers bonded to the first resin layer 204 to be reduced. Experiments show that when the thickness of the first resin layer 202 is 0.5-10 μm, the bonding strength with other layers can be ensured, and higher light efficiency can be obtained. It is to be understood that the first resin layer 202 fills the convex-concave surface of the wavelength conversion layer 201, and thus the surface of the first resin layer 202 in contact with the wavelength conversion layer 201 is also of a convex-concave structure, and the flat surface of the first resin layer 202 is spatially opposed to the convex-concave surface thereof.
The inventors found through experiments when the reflective layer is provided that in most cases, the metallic reflective layer 204 directly provided on the first resin layer 202 is easily peeled off, and the problem of weak adhesion of the reflective layer to the wavelength conversion layer cannot be solved because the surface energy of the resin layer is much smaller than that of the metallic layer. In order to solve the problem, the present invention provides a transparent dielectric layer 203 having a surface energy between the resin layer and the metal layer on the first resin layer 202. Transparent dielectric layers include, but are not limited to, Al2O3Dielectric film, SiO2Dielectric film, TiO2Dielectric film and MgF2The dielectric film may be formed on the flat surface of the first resin layer 202 by vacuum deposition, wherein the flat surface having a surface roughness of less than 0.5 μm may greatly reduce the difficulty of the deposition process of the transparent dielectric layer, and the subsequent reflection effect of the transparent dielectric layer is better. The thickness of the transparent dielectric layer 203 is 20nm to 1000 nm.
The metal reflective layer 204 can be a metal material with high reflectivity such as Al, Ag, Au, etc., and is disposed on the transparent dielectric layer 203 by sputtering, vacuum evaporation, etc., wherein the thickness of the metal reflective layer 204 is 50-1000 nm, which has a good reflective effect. The carrier substrate 205 is disposed on the metal reflective layer 204, and functions as a support and a heat conducting. The carrier substrate may be a metal substrate such as an aluminum substrate, a copper substrate, or a copper-aluminum mixed substrate, or may be a ceramic substrate such as an aluminum nitride substrate, an aluminum oxide substrate, or a boron nitride substrate, which is not limited in the present invention. The carrier substrate 205 may be disposed on the metal reflective layer 204 by soldering, gluing, or the like. As shown in fig. 3, in some embodiments, a second resin layer 206 may be further disposed between the carrier substrate 205 and the metal reflective layer 204, the second resin layer 206 is made of the same material and disposed in the same manner as the first resin layer 202, and the second resin layer 206 only has an adhesive effect and does not require an optical effect, so that the thickness of the second resin layer is 50 to 200 μm. In some embodiments, as shown in fig. 4, a transition layer 207 having a surface energy between the second resin layer 206 and the metal reflective layer 204 is further disposed between the second resin layer 206 and the metal reflective layer 204, and the transition layer may only serve to improve the bonding strength between the second resin layer 206 and the metal reflective layer 204, and has a thickness of 5 to 8 μm to ensure the heat conduction effect and the bonding strength between the layers. When the ceramic substrate is selected for the carrier substrate 205, the structure of the transition layer and the second resin layer between the metal reflective layer and the carrier substrate is particularly suitable for use, because the metal reflective layer and the ceramic substrate combined by the welding method have low firmness, and the metal reflective layer and the ceramic substrate combined by the gluing method can cause the reliability reduction of the light-emitting device due to the poor weather resistance of the adhesive. Compared with an adhesive, the resin material has higher weather resistance and stronger firmness when being used for bonding metal and ceramic in a welding mode.
In the invention, the first resin layer 202 and the transparent medium layer 203 are arranged between the wavelength conversion layer 201 and the metal reflection layer 204, so that the technical problems that the polished surface of the wavelength conversion layer 201 is uneven, the bonding force of the joint of the metal reflection layer and the wavelength conversion layer is weak, and the interface sealing property is poor, so that the phenomena of oxidation and vulcanization are easy to occur are solved, the weather resistance of the metal reflection layer is better, and the bonding force with the wavelength conversion layer is higher.
The invention has the advantages that the metal reflecting layer has different reflectivity to visible light. The metal refractive index/extinction coefficient varies with wavelength, and the surface scattering varies with wavelength, so that the reflectivity of the metal reflective layer in a short-wave visible light range is lower than that in a long-wave range, and when a light-emitting device using the metal reflective layer is used in a display field such as projection, the color of a picture is distorted. Taking the silver reflective layer as an example, as shown in fig. 3, the reflectivity of the silver reflective layer in the blue-green band (450nm-550nm) is lower than the reflectivity of the red band (620 nm-760 nm), that is, when the silver reflective layer is used in the display field, the red proportion in the picture is high, the blue-green proportion is low, and the picture is reddish. Therefore, it is preferable that the transparent dielectric layer 203 of the present invention also has other functions, such as realizing high transmittance to visible light in a short wavelength rangeThe reflectivity makes up the defect that the reflectivity of the metal reflecting layer in short-wave-band visible light is low. Specifically, by using the interference principle, the optical path difference of two beams of reflected light formed by reflecting the visible light of the short waveband through two surfaces of the transparent dielectric layer 203 satisfies the constructive interference, so that the reflected light of the waveband is enhanced due to the interference, and the transparent dielectric layer 203 has a higher reflectivity for the specific short waveband visible light. The refractive index n of the first resin layer 202 is required in selection of materials of the first resin layer 202 and the transparent dielectric layer 2032Should be smaller than the refractive index n of the transparent dielectric layer 2033Preferably, the refractive index of the first resin layer 202 is 1, and the thickness t of the transparent dielectric layer 203 is designed to satisfy the equation:
Figure BDA0001668629440000061
then, a high reflectance effect for visible light of a specific wavelength can be achieved, where λ is the wavelength of visible light for which reflectance needs to be improved. Thus, the wavelength band with wavelength λ or centered on λ has increased interference, while the other bands have slight loss of light reflectivity. With TiO2For example, when the thickness of TiO2 is 18nm, 129nm or 240nm, the dielectric film can realize higher reflectivity for 500nm short wave band.
The invention also provides a preparation method of the light-emitting device, which comprises the following steps:
s10: uniformly mixing a film forming substance, an auxiliary agent, a filler and at least two solvents with different boiling points according to a predetermined proportion to obtain resin slurry;
s20: coating the resin slurry on one side surface of the wavelength conversion layer to form a resin coating, and curing the resin coating to form a resin layer;
s30: depositing a transparent medium layer on the surface of one side of the resin layer, which is far away from the wavelength conversion layer;
s40: and arranging a metal reflecting layer on the transparent medium layer, and arranging a bearing substrate on one side of the metal reflecting layer, which is far away from the wavelength conversion layer.
The selection of the components of the resin paste and the determination of the content thereof need to take the reliability of the light emitting device into consideration. Specifically, in component selection, the film forming material is used as a main component which directly influences the reliability of the resin layer, at least one of phenolic resin, acrylic resin, unsaturated polyester resin and epoxy resin is used as the film forming material, the curing process adopts thermosetting, the curing temperature is 125-150 ℃, and the heat resistance of the product is high. The auxiliary agent is polyethylene. The filler is at least one of silicon carbide, silicon oxide, zirconium oxide and aluminum oxide. The solvent comprises amyl acetate, propylene glycol methyl ether acetate, n-butyl acetate, butyl acetate and poly diisocyanatohexane, and at least two solvents with different boiling points are selected to form gradient volatilization, so that the filler cannot be separated out too fast or too slow, and the effect of adjusting the transparency of the resin layer is achieved.
In terms of content determination, since the larger the contact area between the resin slurry and the wavelength conversion layer is when the resin slurry is coated on the polished surface of the wavelength conversion layer, the higher the adhesion after curing, and when the resin slurry fills up the uneven structure of the polished surface of the wavelength conversion layer, the adhesion between the wavelength conversion layer and the resin layer is theoretically the largest, the resin slurry is required to have good fluidity to fill up the uneven structure of the polished surface, and good fluidity also makes it easier to obtain a flat surface. For the curing and molding of the resin paste, the higher the content of the film-forming material, the better the film-forming property, but at the same time, the higher the viscosity, the poorer the fluidity during the resin paste coating process. In summary, it is desirable to combine the properties of curing and adhesion. The inventor finds that when the resin slurry contains 17-33 wt% of film-forming substance, 5-15 wt% of filler, 1-5 wt% of auxiliary agent and 50-75 wt% of solvent mixture, the resin slurry can well level up the convex-concave structure of the polished surface of the wavelength conversion layer 201, and the cured and molded resin layer 202 also can meet the requirement of the invention in weather resistance. It should be understood that the above-mentioned solvent mixture contains at least two solvents having different boiling points, and the content ranges of the at least two solvents having different boiling points should be such that the sum of the lower limit values of the contents is 50 wt%, the sum of the upper limit values of the contents is 75 wt%, the sum of the lower limit value of any one solvent and the upper limit value of the content of the other components of the resin syrup is not less than 100 wt%, and the sum of the upper limit value of any one solvent and the lower limit value of the content of the other components of the resin syrup is not more than 100 wt%. For example, the resin paste contains 17 to 33 wt% of acrylic resin, 5 to 15 wt% of silica, 1 to 5 wt% of polyethylene, 5 to 10 wt% of amyl acetate, 5 to 10 wt% of propylene glycol methyl ether acetate, 10 to 15 wt% of n-butyl acetate, 10 to 15 wt% of butyl acetate, and 20 to 25 wt% of polyisocyanatohexane.
In some embodiments, after the metal reflective layer is disposed on the transparent dielectric layer in step S40, the resin paste in step S10 is further coated on the metal reflective layer, and then the carrier substrate is disposed on the resin paste, and the light emitting device is obtained after curing.
In some embodiments, after the metal reflective layer is disposed on the transparent dielectric layer in step S40, a transition layer is disposed on the metal reflective layer, the resin paste in step S10 is coated on the transition layer, and finally the carrier substrate is disposed on the resin paste, and the light emitting device is obtained after curing. The transition layer provided in step 40 of this embodiment may be the same as or different from the transparent dielectric layer in step 30, provided that the surface energy of the transition layer is between the metal reflective layer and the resin paste.
The present invention will be described with reference to specific examples.
Example one
Taking a sintered and molded wavelength conversion sheet as a wavelength conversion layer, and polishing at least one surface of the wavelength conversion sheet for later use. The polished surface of the wavelength conversion plate may be any shape including, but not limited to, circular, square, or annular, depending on the application. In fact, since the thickness of the wavelength conversion sheet is thin, typically not more than 300 μm, the shape of the polished surface can be roughly regarded as the shape of the wavelength conversion sheet.
Uniformly mixing 17 wt% of acrylic resin, 8 wt% of silicon oxide, 5 wt% of polyethylene, 10 wt% of amyl acetate, 10 wt% of propylene glycol methyl ether acetate, 15 wt% of n-butyl acetate, 15 wt% of butyl acetate and 20 wt% of poly diisocyanatohexane to obtain resin slurry.
The resin slurry is coated on the polished surface of the wavelength conversion sheet to form a resin coating, and the coating mode can be spin coating, spray coating, dip coating, blade coating and the like. And standing for 0.5-2 h, putting into an oven, and curing the resin coating at the temperature of 125 ℃ to obtain the resin layer. Because the resin coating shrinks in a certain proportion after curing, the thickness of the resin coating formed by coating the resin slurry should be adjusted according to the actually required thickness of the resin layer, so that the thickness of the cured resin layer is kept at 0.5-10 μm.
Depositing TiO with the thickness of 20-1000nm on the surface of one side of the resin layer far away from the wavelength conversion sheet2Film of TiO on2The film thickness enhances the reflection of the short wave band with the central wavelength of 500nm, and according to the formula, TiO2The thickness of the film is 18nm, 129nm, 240nm or the like, and a high reflectance is realized in a short wavelength region of 500nm, and 129nm is preferable in the present embodiment. The deposition process can be referred to the prior art and is not described herein.
Then on TiO2Arranging a silver reflecting layer on the film in a magnetron sputtering mode, placing the wavelength conversion sheet with the cured resin layer into a magnetron sputtering device, placing one side of the resin layer facing a target material, and vacuumizing to 10 DEG-4And (3) after Pa, flushing argon, sputtering an Ag target, sputtering at the power of 100w for 5min, and depositing an Ag film with the thickness of 100nm on the surface of the resin layer.
After the silver reflecting layer is prepared, the aluminum substrate and the silver reflecting layer are welded in a soldering mode to obtain the structure which is sequentially provided with the wavelength conversion layer, the resin layer and the TiO2A film dielectric layer, a silver reflecting layer and an aluminum substrate.
Example two
The difference between this example and the first example is that the resin slurry in this example is prepared by uniformly mixing 33 wt% of acrylic resin, 14 wt% of silica, 1 wt% of polyethylene, 5 wt% of amyl acetate, 5 wt% of propylene glycol methyl ether acetate, 10 wt% of n-butyl acetate, 10 wt% of butyl acetate and 22 wt% of poly diisocyanatohexane.
In addition, the carrier substrate of the light emitting device in this embodiment is a ceramic substrate, specifically an aluminum nitride ceramic substrate.
In the preparation method, in TiO2Vacuum sputtering method is adopted on the filmDepositing a 1000nm thick silver reflecting layer, coating resin slurry on the silver reflecting layer after the silver reflecting layer is prepared, and then arranging the aluminum nitride ceramic substrate on the resin slurry and curing. Unlike the first embodiment, the light emitting device of the present embodiment can be manufactured by sequentially disposing the wavelength conversion layer, the resin layer, and the TiO layer2A film dielectric layer, a silver reflecting layer, a resin layer and an aluminum nitride ceramic substrate.
The rest is the same as the first embodiment. In the embodiment, the resin layer between the silver reflecting layer and the aluminum nitride ceramic substrate only plays a role of adhesion, does not need the optical effect, has the thickness of 200 mu m, and has good adhesion performance and low thermal resistance.
EXAMPLE III
The difference between the present embodiment and the first embodiment is that, first, the carrier substrate adopted in the present embodiment is a ceramic substrate, specifically, an alumina ceramic substrate. The components and contents of the resin slurry in the second embodiment are as follows:
25 wt% of acrylic resin, 5 wt% of silicon oxide, 3 wt% of polyethylene, 8 wt% of amyl acetate, 10 wt% of propylene glycol methyl ether acetate, 12 wt% of n-butyl acetate, 15 wt% of butyl acetate and 22 wt% of polyisocyanatohexane.
In the preparation method, after the preparation of the silver reflecting layer is finished, a transition layer with the thickness of 5-8 microns is arranged on the silver reflecting layer. Specifically, the same method as that for depositing the transparent dielectric layer on the resin layer is adopted for arranging the transition layer on the silver reflecting layer, and the same TiO can be deposited2Thin film, it is also possible to deposit different thin films (e.g. Al)2O3Film, MgF2Film, SiO2Film) only by the surface energy of the transition layer between the metal reflecting layer and the resin paste, the transition layer is Al in this embodiment2O3A film.
Then in Al2O3Coating resin slurry on the film, and finally arranging the alumina ceramic substrate on the resin slurry and curing. Light-emitting device and device obtained in this embodimentIn a different embodiment, the method of the present embodiment can provide a structure in which a wavelength conversion layer, a resin layer, and TiO are sequentially disposed2Thin film dielectric layer, silver reflective layer, Al2O3A thin film transition layer, a resin layer, and an alumina ceramic substrate. Al (Al)2O3The thickness of the resin layer between the thin film transition layer and the alumina ceramic substrate is 50 μm, so that the finally obtained light-emitting device has good adhesive property and low thermal resistance. The rest is the same as the first embodiment.

Claims (10)

1. The utility model provides a light emitting device, includes wavelength conversion layer, metal reflecting layer and the load-bearing substrate that stacks gradually the setting, its characterized in that still includes:
a first resin layer disposed between the wavelength conversion layer and the metal reflection layer;
the transparent medium layer is arranged between the first resin layer and the metal reflecting layer, the thickness of the transparent medium layer is 20-1000nm, and the surface energy of the transparent medium layer is between the surface energy of the metal reflecting layer and the surface energy of the first resin layer;
the surface energy of the first resin layer is less than the surface energy of the metal reflective layer.
2. The light-emitting device according to claim 1, wherein a refractive index of the first resin layer is smaller than a refractive index of the transparent dielectric layer.
3. The light-emitting device according to claim 1, wherein a second resin layer is disposed between the metal reflective layer and the carrier substrate.
4. The light-emitting device according to claim 3, wherein a transition layer is disposed between the metal reflective layer and the second resin layer, and a surface energy of the transition layer is between a surface energy of the metal reflective layer and a surface energy of the second resin layer.
5. A light-emitting device according to claim 3 or 4, wherein the carrier substrate is a ceramic substrate.
6. The light-emitting device according to claim 1, wherein a surface of the first resin layer in contact with the transparent dielectric layer has a roughness of less than 0.5 μm.
7. The light-emitting device according to claim 1, wherein the transparent dielectric layer is TiO2Film of said TiO2The film thickness is 18nm, 129nm or 240 nm.
8. The light-emitting device according to claim 1, wherein the first resin layer has a visible light transmittance of more than 95%.
9. A method of making a light emitting device, comprising the steps of:
s10: uniformly mixing a film forming substance, an auxiliary agent, a filler and at least two solvents with different boiling points according to a predetermined proportion to obtain resin slurry;
s20: coating the resin slurry on one side surface of the wavelength conversion layer to form a resin coating, and curing the resin coating to form a resin layer;
s30: depositing a transparent medium layer on the surface of one side of the resin layer, which is far away from the wavelength conversion layer;
s40: arranging a metal reflecting layer on the transparent medium layer, and arranging a bearing substrate on one side of the metal reflecting layer, which is far away from the wavelength conversion layer;
wherein the surface energy of the resin layer is less than the surface energy of the metal reflective layer.
10. The method of claim 9, wherein the predetermined ratio is: 17-33 wt% of acrylic resin, 5-15 wt% of silicon oxide, 1-5 wt% of polyethylene, 5-10 wt% of amyl acetate, 5-10 wt% of propylene glycol methyl ether acetate, 10-15 wt% of n-butyl acetate, 10-15 wt% of butyl acetate and 20-25 wt% of poly diisocyanatohexane.
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