CN110491786A - A method of crystalline silicon is corroded using salting liquid - Google Patents
A method of crystalline silicon is corroded using salting liquid Download PDFInfo
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- CN110491786A CN110491786A CN201910718681.8A CN201910718681A CN110491786A CN 110491786 A CN110491786 A CN 110491786A CN 201910718681 A CN201910718681 A CN 201910718681A CN 110491786 A CN110491786 A CN 110491786A
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- Prior art keywords
- metal film
- crystal silicon
- salting liquid
- crystalline silicon
- silicon chip
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000007788 liquid Substances 0.000 title claims abstract description 63
- 238000009938 salting Methods 0.000 title claims abstract description 53
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 114
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 77
- 239000010703 silicon Substances 0.000 claims abstract description 77
- 239000013078 crystal Substances 0.000 claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 46
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000007797 corrosion Effects 0.000 claims description 38
- 238000005260 corrosion Methods 0.000 claims description 38
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 11
- 238000007650 screen-printing Methods 0.000 claims description 11
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 8
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 8
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 8
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 8
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 8
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 7
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 6
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 238000004377 microelectronic Methods 0.000 claims description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 4
- 239000004323 potassium nitrate Substances 0.000 claims description 4
- 235000010333 potassium nitrate Nutrition 0.000 claims description 4
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 4
- 235000011009 potassium phosphates Nutrition 0.000 claims description 4
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 4
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 4
- 235000011151 potassium sulphates Nutrition 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- 239000004317 sodium nitrate Substances 0.000 claims description 4
- 235000010344 sodium nitrate Nutrition 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 235000011181 potassium carbonates Nutrition 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- 239000001488 sodium phosphate Substances 0.000 claims description 3
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 235000011152 sodium sulphate Nutrition 0.000 claims description 3
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 abstract description 20
- 238000004140 cleaning Methods 0.000 abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 description 50
- 229910052782 aluminium Inorganic materials 0.000 description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 50
- 239000010931 gold Substances 0.000 description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 28
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 24
- 229910052709 silver Inorganic materials 0.000 description 24
- 239000004332 silver Substances 0.000 description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 19
- 229910052737 gold Inorganic materials 0.000 description 19
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 18
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 18
- 239000000243 solution Substances 0.000 description 17
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 235000002639 sodium chloride Nutrition 0.000 description 10
- 239000011780 sodium chloride Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 230000006872 improvement Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 150000005837 radical ions Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000015424 sodium Nutrition 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A method of crystalline silicon is corroded using salting liquid, the first metal film with figure is prepared on crystal silicon chip first, the second metal film with figure is prepared on crystal silicon chip again, it is subsequently placed in salting liquid, it is reacted under conditions of having oxygen participation, to remove remaining first metal film of reaction and the second metal film, cleaning, drying, pit required for corroding on crystal silicon chip out or through-hole after completion of the reaction.Present invention employs environment amenable salting liquids as corrosive liquid, requires according to technique, pit required for corroding on crystal silicon chip out or through-hole.When being corroded using this method, the hydroxide ion number and hot spot controllable precise of generation can corrode pit out or through-hole on crystalline silicon, meet the needs of crystalline silicon devices processing request.
Description
Technical field
The invention belongs to crystal silicon chip manufacture fields, are related to a kind of method using salting liquid corrosion crystalline silicon.
Background technique
Basic material of the crystalline silicon as electronics industry, purposes is very extensive, and it is desirable to rotten on the surface of crystalline silicon
Required out pit or through-hole are lost, the needs of electronic device preparation are met.At present on crystal silicon chip prepare needed for pit and
The method of through-hole has a chemical corrosion method, the methods of laser boring method and plasma etching, chemical corrosion method generally use it is acid or
Alkaline solution carries out isotropism or anisotropic corrosion on crystal silicon chip surface, prepares required pit, plays reduction
The effect of reflection is used to prepare opto-electronic device, or corrodes through-hole required by technique out, the solid for microelectronic component
Encapsulation.Chemical corrosion method is although easy to operate, but the use of a large amount of acid or alkaline solution easily pollutes the environment.Laser
Although cheesing techniques are succinct efficiently, it is be easy to cause crystal silicon chip surface damage, damage location easily causes local carrier surface
The increase of recombination velocity reduces the electrical property of device.Plasma etching is often used for preparing pit of different shapes, plays light
The effect of anti-reflection is learned, but plasma etching speed is slower, low efficiency, equipment is expensive, and preparation cost is high.
It is using corrosion method corrosion crystalline silicon with the main distinction using alkaline solution corrosion crystalline silicon: using alkali
Property solution corrosion when, the surface of crystalline silicon is all exposed in alkaline solution, and use the present invention corrosion crystal silicon chip when, electrochemistry
The hydroxide ion that reaction generates is gathered in the place for needing to etch, and has reached and has pinpointed the effect of corrosion crystalline silicon in microscopic fields
Fruit.
Summary of the invention
It is the shortcomings that in order to overcome the prior art, a kind of using salting liquid corrosion crystalline silicon it is an object of the invention to propose
Method.
To achieve the above object, the present invention adopts the following technical scheme that:
A method of crystalline silicon is corroded using salting liquid, prepares the first gold medal with figure on crystal silicon chip first
Belong to film, then prepare the second metal film with figure on crystal silicon chip, be subsequently placed in salting liquid, there is oxygen to participate in
Under the conditions of reacted, to remove remaining first metal film of reaction and the second metal film, cleaning, drying, In after completion of the reaction
Pit required for corroding on crystal silicon chip out or through-hole.
A further improvement of the present invention lies in that the resistivity of crystal silicon chip is 1-3 Ω cm, with a thickness of 100-450 μm.
A further improvement of the present invention lies in that the metal activity of the metal activity of the first metal film and the second metal film
It is different.
A further improvement of the present invention lies in that the first metal film with figure and the second metal film with figure are adopted
It is made with the following method:
Using being evaporated in vacuo or using sputtering, then formed by the method for anti-carving metal in microelectronic technique；Or
It is once formed by the mechanical mask with corresponding pattern；Or
It is made using screen printing technique.
A further improvement of the present invention lies in that the thickness of the first metal film and the second metal film is 0.01-10 μm.
A further improvement of the present invention lies in that salting liquid is sodium chloride, sodium carbonate, sodium sulphate, sodium nitrate, sodium phosphate, bromine
Change sodium, potassium chloride, potassium carbonate, potassium sulfate, potassium nitrate, potassium phosphate or potassium bromide solution.
A further improvement of the present invention lies in that the mass percent concentration of salting liquid is 1%-90%.
A further improvement of the present invention lies in that reaction carries out under room temperature or heating condition.
Compared with prior art, the invention has the benefit that according to galvanic interaction mechanism, salting liquid is as electrolysis
Liquid, the different metal film of two kinds of metal activities is as electrode on crystal silicon chip, and on cathode, the stronger metal of metal activity is lost
Oxidation reaction occurs for de-electromation, and on anode, oxygen obtains electronics and reduction reaction, generation OH occurs-, OH-It is reacted again with Si, finally
Generate silicate and hydrogen.The present invention uses environment amenable salting liquid as corrosive liquid, presses according to above-mentioned reaction mechanism
According to technique requirement, pit required for corroding on crystal silicon chip out or through-hole.When being corroded using this method, the hydrogen-oxygen of generation
Radical ion number and hot spot controllable precise can corrode pit out or through-hole on crystalline silicon, meet crystalline silicon devices and add
The needs that work requires.This method do not use it is environmentally harmful acid or caustic corrosion liquid, do not use yet laser boring and wait from
The methods of son etching, can require according to technique, corrode required out pit or through-hole using salting liquid, easy to operate, tool
There is good controllability, the pit or through-hole of any shape can be corroded.
Detailed description of the invention
Fig. 1 is the schematic diagram of pit or through-hole needed for the present invention is prepared on crystal silicon chip.
In figure, 1 is crystal silicon chip, and 2 be the first metal film with required figure, and 3 be the second gold medal with required figure
Belong to film, 4 be pit, and 5 be through-hole.
Fig. 2 is flow chart of the invention.
Specific embodiment
It is illustrated with reference to the accompanying drawing by specific embodiment.
Referring to Fig. 1 and Fig. 2, the invention discloses a kind of methods using salting liquid corrosion crystalline silicon, on crystal silicon chip 1
The first metal film 2 with required figure is prepared, then prepares the second metal film with required figure on crystal silicon chip
3, then the crystal silicon chip with certain metal pattern is placed in salting liquid, is reacted under conditions of having oxygen participation,
To react remaining first metal film and the second metal film, cleaning, drying, in crystalline silicon with the removal of corresponding solution after completion of the reaction
Pit 4 required on piece is corroded out or through-hole 5.Wherein, the metal of the metal activity of the first metal film and the second metal film
Activity is different.The required reaction time is related with the concentration of depth, salting liquid and reaction temperature that are etched.
For the diameter of crystal silicon chip about between 100-300mm, resistivity is 1-3 Ω cm in the present invention, and thickness about exists
Between 100-450 μm.
The preparation of figure both can also use sputtering using being evaporated in vacuo on first metal film and the second metal film,
It is formed finally by the method for anti-carving metal in microelectronic technique, the thickness of the first metal film and the second metal film is in 0.01-
Between 10 μm.
The preparation of figure can also pass through the mechanical mask one with respective graphical on first metal film and the second metal film
The thickness of secondary formation, the first metal film and the second metal film is between 0.01-10 μm.
On first metal film and the second metal film the preparation of figure can also use screen printing technique, the first metal film and
The thickness of second metal film is between 0.01-10 μm.Preferably, with a thickness of 1-10 μm, the thickness of specific every layer of metal film can
To be adjusted according to actual needs.
Corrosion is corroded using salting liquid in the present invention, without using acid disagreeableness to environment or aqueous slkali,
Also without the method using plasma etching or laser boring.
Salting liquid used is certain density sodium salt or potassium salt soln, such as certain density sodium chloride, sodium carbonate, sulfuric acid
The salting liquids such as sodium, sodium nitrate, sodium phosphate, sodium bromide, potassium chloride, potassium carbonate, potassium sulfate, potassium nitrate, potassium phosphate or potassium bromide；It is excellent
Choosing is sodium chloride solution.The mass percent concentration of salting liquid used is between 1%-90%, it is preferred that the quality of salting liquid
Percent concentration is 30%-80%.If the mass percent concentration of salting liquid is small, the time president one of corrosion reaction is needed
A bit.
The reaction is in atmosphere or carries out corrosion reaction under conditions of having oxygen to participate in.Reaction both can at room temperature into
Row can also carry out under conditions of assisting heating, specific depending on technique requirement.
The time of the reaction is related with the depth of etching, the concentration of salting liquid and reaction temperature.Etching depth is shallow, salt is molten
Liquid concentration is high, reaction temperature is high, then the time required for the reaction is short.
This method does not use environmentally harmful acid or caustic corrosion liquid, easy to operate, has good controllability, can be with
Corrode the pit or through-hole of any shape.
It is below specific embodiment.
Embodiment 1
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 1 μ m thick, then carries out photoetching, falls unwanted aluminium, then benefit followed by hot phosphoric acid corrosion
The metal Ag films (i.e. the second metal film) of about 1 μ m thick are deposited with metal mask, later, the crystal for having aluminium layer and silver layer will be steamed
Silicon wafer is placed in the sodium chloride solution of mass percent concentration 40%, is placed in 40-60 DEG C and is reacted under conditions of having oxygen to participate in
100 hours, crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver getting rid of and do not reacted to end of reaction, cleans, dry
To the crystal silicon chip of required through-hole.
Embodiment 2
A method of crystalline silicon being corroded using salting liquid, using p type single crystal silicon piece, a diameter of 300mm, resistivity is
1-3 Ω cm, thickness are 180 μm, and mechanical mask and crystal silicon chip are combined closely first, are placed on vacuum evaporation or sputtering is set
In standby deposition station, the aluminium film (i.e. the first metal film) of one layer of about 1 μ m thick is deposited, then opens vacuum chamber, removes and gold
Belong to the corresponding mechanical mask of aluminium film, change another mechanical mask, again the silverskin (i.e. second of about 0.5-1 μm of evaporation or sputtering
Metal film), the crystal silicon chip with certain aluminium and silver-colored pattern is removed after evaporating, and is placed in the chlorine of mass percent concentration 30%
Change in sodium solution, is placed under air atmosphere, by reaction temperature control between 60-80 DEG C, the reaction time is about 5-6 hours, to
Crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver got rid of and do not reacted after completion of the reaction, cleaning, drying obtain required about 3
The crystal silicon chip of μ m-thick pit.
Embodiment 3
A method of using salting liquid corrode crystalline silicon, using the quasi- square piece of p type single crystal silicon, size be 156mm ×
156mm, resistivity are 1-3 Ω cm, and thickness is 180 μm, and the method for silk-screen printing is used first on the p type single crystal silicon silicon wafer
The aluminium film (i.e. the first metal film) for printing one layer of about 10 μ m thick, is then dried, then carries out second of silk-screen printing, is printed
The silverskin (i.e. the second metal film) of one layer of about 10 μ m thick is brushed, drying is placed on the sodium chloride solution of mass percent concentration 60%
In, it is reacted 2-3 hours in logical oxygen and under the conditions of reaction temperature is 50 DEG C, to which crystal silicon chip is placed in chloroazotic acid after completion of the reaction
Remove the metallic aluminium and silver not reacted, the crystal silicon chip of about 2 μ m-thick pits needed for cleaning, drying obtain.
Embodiment 4
A method of using salting liquid corrode crystalline silicon, using p-type polysilicon piece, size be 156.75mm ×
156.75mm, resistivity are 1-3 Ω cm, and thickness is 180 μm, using vacuum evaporation or are splashed in the p-type polysilicon on piece first
The aluminium film (i.e. the first metal film) of one layer of about 1 μ m thick is deposited in the method penetrated, and photoetching is then carried out, followed by hot phosphoric acid corrosion
Fall unwanted aluminium, Au (gold) film (i.e. the second metal film) for recycling metal mask to be deposited about 0.5-1 μm will steam later
There is aluminium film and the crystal silicon chip of Au (gold) film to be placed in the sodium chloride solution of mass percent concentration 40%, be placed in 80-85 DEG C and
It is reacted 60 hours under conditions of thering is oxygen to participate in, crystal silicon chip is placed in chloroazotic acid the gold got rid of and do not reacted to end of reaction
Belong to aluminium and gold, cleaning, drying obtain the crystal silicon chip of required through-hole.
Embodiment 5
A method of crystalline silicon being corroded using salting liquid, using p type single crystal silicon piece, a diameter of 150mm, resistivity is
1-3 Ω cm, thickness are 180 μm, and mechanical mask and crystal silicon chip are combined closely first, are placed on vacuum evaporation or sputtering is set
In standby deposition station, the copper film (i.e. the first metal film) of one layer of about 1 μ m thick is deposited, then opens vacuum chamber, removes and gold
Belong to the corresponding mechanical mask of copper film, change another mechanical mask, evaporates again or sputter about 0.5-1 μm Au (gold) film (i.e.
Second metal film), the crystal silicon chip with certain copper and Au (gold) pattern is removed after evaporating, and is placed in mass percent concentration
In 30% sodium chloride solution, it is placed under air atmosphere and reaction temperature is 40-50 DEG C and reacts 10 hours, to after completion of the reaction will
Crystal silicon chip, which is placed in chloroazotic acid, gets rid of the metallic copper not reacted and Au (gold), about 1 μ m-thick pit needed for cleaning, drying obtain
Crystal silicon chip.
Embodiment 6
A method of using salting liquid corrode crystalline silicon, using the quasi- square piece of p type single crystal silicon, size be 156mm ×
156mm, resistivity are 1-3 Ω cm, and thickness is 150 μm, and the side of silk-screen printing is used first in the quasi- square piece of the p type single crystal silicon
Method prints the copper film (i.e. the first metal film) of one layer of about 10 μ m thick, is then dried, then carries out second of silk-screen printing,
The silverskin (i.e. the second metal film) of one layer of about 10 μ m thick is printed, the sodium chloride that drying is placed on mass percent concentration 80% is molten
In liquid, reacted 8 hours in logical oxygen and under the conditions of reaction temperature is 75 DEG C, to which crystal silicon chip is placed in chloroazotic acid after completion of the reaction
The metallic copper and silver not reacted are removed, cleaning, drying obtain the crystal silicon chip of required through-hole.
Embodiment 7
A method of crystalline silicon is corroded using salting liquid, using n type single crystal silicon silicon wafer, a diameter of 210mm, resistivity
It is 1-3 Ω cm, thickness is 450 μm, is deposited one layer using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The silverskin (i.e. the first metal film) of about 1 μ m thick, then carries out photoetching, falls unwanted silver followed by hot phosphoric acid corrosion, then
About 0.5-1 μm of metal platinum film (i.e. the second metal film) is deposited using metal mask, and then, has silver layer and platinum layer for steaming
Crystal silicon chip is placed in the sodium chloride solution of mass percent concentration 40%, under conditions of being placed in 30-40 DEG C and having oxygen to participate in
Crystal silicon chip is placed in chloroazotic acid the metallic silver and platinum getting rid of and do not reacted, cleaning, drying to end of reaction by reaction 5 hours
The crystal silicon chip of about 1 μ m-thick pit needed for obtaining.
Embodiment 8
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 2 μ m thicks, then carries out photoetching, falls unwanted aluminium, then benefit followed by hot phosphoric acid corrosion
The metal Ag films (i.e. the second metal film) of about 0.1 μ m thick are deposited with metal mask, later, the crystalline substance for having aluminium layer and silver layer will be steamed
Body silicon wafer is placed in the Klorvess Liquid of mass percent concentration 1%, is placed in 40-60 DEG C and is reacted under conditions of having oxygen to participate in
8-9 hours, crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver getting rid of and do not reacted to end of reaction, cleans, dry
To the crystal silicon chip of required about 1 μ m-thick pit.
Embodiment 9
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 0.1 μ m thick, then carries out photoetching, falls unwanted aluminium followed by hot phosphoric acid corrosion, then
Steaming there are into aluminium layer and silver layer later using the metal Ag films (i.e. the second metal film) that about 0.01 μ m thick is deposited in metal mask
Crystal silicon chip be placed in the sodium carbonate liquor of mass percent concentration 90%, be placed in 40-60 DEG C and have oxygen participate in condition
Crystal silicon chip is placed in chloroazotic acid the metallic aluminium and silver getting rid of and do not reacted to end of reaction by lower reaction 10 hours, and cleaning is dried
The dry crystal silicon chip for obtaining required through-hole.
Embodiment 10
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 0.5 μ m thick, then carries out photoetching, falls unwanted aluminium followed by hot phosphoric acid corrosion, then
The metal Ag films (i.e. the second metal film) of about 1 μ m thick are deposited using metal mask, later, the crystalline substance for having aluminium layer and silver layer will be steamed
Body silicon wafer is placed in the solution of potassium carbonate of mass percent concentration 10%, anti-under conditions of being placed in 40-60 DEG C and having oxygen to participate in
It answers 2-3 hours, crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver getting rid of and do not reacted, cleaning, drying to end of reaction
The crystal silicon chip of about 1 μ m-thick pit needed for obtaining.
Embodiment 11
A method of using salting liquid corrode crystalline silicon, using the quasi- square piece of p type single crystal silicon, size be 156mm ×
156mm, resistivity are 1-3 Ω cm, and thickness is 150 μm, and the side of silk-screen printing is used first in the quasi- square piece of the p type single crystal silicon
Method prints the copper film (i.e. the first metal film) of one layer of about 10 μ m thick, is then dried, then carries out second of silk-screen printing,
The silverskin (i.e. the second metal film) of one layer of about 10 μ m thick is printed, the sodium sulphate that drying is placed on mass percent concentration 80% is molten
In liquid, reacted 8 hours in logical oxygen and under the conditions of reaction temperature is 75 DEG C, to which crystal silicon chip is placed in chloroazotic acid after completion of the reaction
The metallic copper and silver not reacted are removed, cleaning, drying obtain the crystal silicon chip of required through-hole.
Embodiment 12
A method of using salting liquid corrode crystalline silicon, using the quasi- square piece of p type single crystal silicon, size be 156mm ×
156mm, resistivity are 1-3 Ω cm, and thickness is 150 μm, and the side of silk-screen printing is used first in the quasi- square piece of the p type single crystal silicon
Method prints the copper film (i.e. the first metal film) of one layer of about 10 μ m thick, is then dried, then carries out second of silk-screen printing,
The silverskin (i.e. the second metal film) of one layer of about 10 μ m thick is printed, the sodium nitrate that drying is placed on mass percent concentration 80% is molten
In liquid, reacted 8 hours in logical oxygen and under the conditions of reaction temperature is 75 DEG C, to which crystal silicon chip is placed in chloroazotic acid after completion of the reaction
The metallic copper and silver not reacted are removed, cleaning, drying obtain the crystal silicon chip of required through-hole.
Embodiment 13
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 0.5 μ m thick, then carries out photoetching, falls unwanted aluminium followed by hot phosphoric acid corrosion, then
The metal Ag films (i.e. the second metal film) of about 1 μ m thick are deposited using metal mask, later, the crystalline substance for having aluminium layer and silver layer will be steamed
Body silicon wafer is placed in the sodium radio-phosphate,P-32 solution of mass percent concentration 10%, anti-under conditions of being placed in 40-60 DEG C and having oxygen to participate in
It answers 2-3 hours, crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver getting rid of and do not reacted, cleaning, drying to end of reaction
The crystal silicon chip of about 1 μ m-thick pit needed for obtaining.
Embodiment 14
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 0.5 μ m thick, then carries out photoetching, falls unwanted aluminium followed by hot phosphoric acid corrosion, then
The metal Ag films (i.e. the second metal film) of about 1 μ m thick are deposited using metal mask, later, the crystalline substance for having aluminium layer and silver layer will be steamed
Body silicon wafer is placed in the sodium bromide solution of mass percent concentration 10%, anti-under conditions of being placed in 40-60 DEG C and having oxygen to participate in
It answers 2-3 hours, crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver getting rid of and do not reacted, cleaning, drying to end of reaction
The crystal silicon chip of about 1 μ m-thick pit needed for obtaining.
Embodiment 15
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 2 μ m thicks, then carries out photoetching, falls unwanted aluminium, then benefit followed by hot phosphoric acid corrosion
The metal Ag films (i.e. the second metal film) of about 0.1 μ m thick are deposited with metal mask, later, the crystalline substance for having aluminium layer and silver layer will be steamed
Body silicon wafer is placed in the potassium nitrate solution of mass percent concentration 1%, is placed in 40-60 DEG C and is reacted under conditions of having oxygen to participate in
8-9 hours, crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver getting rid of and do not reacted to end of reaction, cleans, dry
To the crystal silicon chip of required about 1 μ m-thick pit.
Embodiment 16
A method of crystalline silicon being corroded using salting liquid, using n type single crystal silicon piece, a diameter of 210mm, resistivity is
1-3 Ω cm, thickness are 450 μm, are deposited one layer about using the method for being evaporated in vacuo or sputtering in the n type single crystal silicon on piece first
The aluminium film (i.e. the first metal film) of 2 μ m thicks, then carries out photoetching, falls unwanted aluminium, then benefit followed by hot phosphoric acid corrosion
The metal Ag films (i.e. the second metal film) of about 0.1 μ m thick are deposited with metal mask, later, the crystalline substance for having aluminium layer and silver layer will be steamed
Body silicon wafer is placed in the potassium bromide solution of mass percent concentration 1%, is placed in 40-60 DEG C and is reacted under conditions of having oxygen to participate in
8-9 hours, crystal silicon chip is placed in chloroazotic acid to the metallic aluminium and silver getting rid of and do not reacted to end of reaction, cleans, dry
To the crystal silicon chip of required about 1 μ m-thick pit.
Embodiment 17
A method of using salting liquid corrode crystalline silicon, using p-type polysilicon piece, size be 156.75mm ×
156.75mm, resistivity are 1-3 Ω cm, and thickness is 180 μm, using vacuum evaporation or are splashed in the p-type polysilicon on piece first
The aluminium film (i.e. the first metal film) of one layer of about 1 μ m thick is deposited in the method penetrated, and photoetching is then carried out, followed by hot phosphoric acid corrosion
Fall unwanted aluminium, Au (gold) film (i.e. the second metal film) for recycling metal mask to be deposited about 0.5-1 μm will steam later
There is aluminium film and the crystal silicon chip of Au (gold) film to be placed in the potassium sulfate solution of mass percent concentration 40%, be placed in 80-85 DEG C and
It is reacted 60 hours under conditions of thering is oxygen to participate in, crystal silicon chip is placed in chloroazotic acid the gold got rid of and do not reacted to end of reaction
Belong to aluminium and gold, cleaning, drying obtain the crystal silicon chip of required through-hole.
Embodiment 18
A method of using salting liquid corrode crystalline silicon, using p-type polysilicon piece, size be 156.75mm ×
156.75mm, resistivity are 1-3 Ω cm, and thickness is 180 μm, using vacuum evaporation or are splashed in the p-type polysilicon on piece first
The aluminium film (i.e. the first metal film) of one layer of about 1 μ m thick is deposited in the method penetrated, and photoetching is then carried out, followed by hot phosphoric acid corrosion
Fall unwanted aluminium, Au (gold) film (i.e. the second metal film) for recycling metal mask to be deposited about 0.5-1 μm will steam later
There is aluminium film and the crystal silicon chip of Au (gold) film to be placed in the potassium phosphate solution of mass percent concentration 40%, be placed in 80-85 DEG C and
It is reacted 60 hours under conditions of thering is oxygen to participate in, crystal silicon chip is placed in chloroazotic acid the gold got rid of and do not reacted to end of reaction
Belong to aluminium and gold, cleaning, drying obtain the crystal silicon chip of required through-hole.
Claims (8)
1. a kind of method using salting liquid corrosion crystalline silicon, which is characterized in that prepared on crystal silicon chip first with figure
First metal film of shape, then the second metal film with figure is prepared on crystal silicon chip, it is subsequently placed in salting liquid, is having
Oxygen is reacted under conditions of participating in, to remove remaining first metal film of reaction and the second metal film after completion of the reaction, clearly
It washes, dry, pit required for corroding on crystal silicon chip out or through-hole.
2. a kind of method using salting liquid corrosion crystalline silicon according to claim 1, which is characterized in that crystal silicon chip
Resistivity is 1-3 Ω cm, with a thickness of 100-450 μm.
3. a kind of method using salting liquid corrosion crystalline silicon according to claim 1, which is characterized in that the first metal film
Metal activity it is different from the metal activity of the second metal film.
4. a kind of method using salting liquid corrosion crystalline silicon according to claim 1, which is characterized in that with figure
First metal film and the second metal film with figure are all made of following method and are made:
Using being evaporated in vacuo or using sputtering, then formed by the method for anti-carving metal in microelectronic technique；Or
It is once formed by the mechanical mask with corresponding pattern；Or
It is made using screen printing technique.
5. a kind of method using salting liquid corrosion crystalline silicon according to claim 1, which is characterized in that the first metal film
Thickness with the second metal film is 0.01-10 μm.
6. a kind of method using salting liquid corrosion crystalline silicon according to claim 1, which is characterized in that salting liquid is chlorine
Change sodium, sodium carbonate, sodium sulphate, sodium nitrate, sodium phosphate, sodium bromide, potassium chloride, potassium carbonate, potassium sulfate, potassium nitrate, potassium phosphate or
Potassium bromide solution.
7. a kind of method using salting liquid corrosion crystalline silicon according to claim 1 or 6, which is characterized in that salting liquid
Mass percent concentration be 1%-90%.
8. a kind of method using salting liquid corrosion crystalline silicon according to claim 1, which is characterized in that reaction is in room temperature
Or it is carried out under heating condition.
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