CN110058341A - A kind of color filer and CIS preparation method - Google Patents
A kind of color filer and CIS preparation method Download PDFInfo
- Publication number
- CN110058341A CN110058341A CN201910329347.3A CN201910329347A CN110058341A CN 110058341 A CN110058341 A CN 110058341A CN 201910329347 A CN201910329347 A CN 201910329347A CN 110058341 A CN110058341 A CN 110058341A
- Authority
- CN
- China
- Prior art keywords
- substrate
- color filer
- refractive index
- cis
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010410 layer Substances 0.000 claims description 33
- 239000003989 dielectric material Substances 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 description 21
- 238000000151 deposition Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 101100248200 Arabidopsis thaliana RGGB gene Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- WPPDXAHGCGPUPK-UHFFFAOYSA-N red 2 Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=2C=3C4=CC=C5C6=CC=C7C8=C(C=9C=CC=CC=9)C9=CC=CC=C9C(C=9C=CC=CC=9)=C8C8=CC=C(C6=C87)C(C=35)=CC=2)C4=C1C1=CC=CC=C1 WPPDXAHGCGPUPK-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
It includes: the substrate for being etched at least one cavernous structure array that the embodiment of the present application, which provides a kind of color filer and CIS preparation method, the color filer,；Wherein, each cavernous structure array is using corresponding aperture through one of the corresponding three coloured light of RGB light.
Description
Technical field
This application involves field of image processing more particularly to a kind of color filer and CIS preparation methods.
Background technique
Colored filter (CF, Color Filter) is a kind of optical filter of apparent color, is complementary metal oxidation
Primary clustering in object semiconductor image sensor (CIS, CMOS Image Sensor), it can accurately select to be intended to by
Small range wave band light wave, and penetrate fall other be not intended to by wave band.Colored filter is typically mounted on the front of light source, makes
Human eye can receive some color light of saturation.Currently, the more common preparation method of color filter film mainly has pigment point
Four kinds of arching pushing, decoration method, print process and electrodeposition process etc..As using CF manufactured by pigment dispersion method have high-precision and compared with
Good light resistance and heat resistance, becomes the main stream approach for preparing color filter film in the world.
The technical process of CF is the light shield layer that anti-transmission is made on transparent glass substrate, then sequentially production has translucency
Then the colored light filter membrane layer of Red Green Blue is coated with one layer of smooth protective layer (Over Coat), most on filter layer
ITO conductive film transparent on sputter afterwards.However, existing CF needs point three steps that R, tri- kinds of CF of G, B are processed, caused respectively
The processing technology of CF is complicated, the thickness of CF is thicker.
Summary of the invention
The embodiment of the present application provides a kind of color filer and CIS preparation method, can reduce answering for CF processing technology
The thickness of miscellaneous degree and CF.
The technical solution of the application is achieved in that
The embodiment of the present application provides a kind of color filer, and the color filer includes: that be etched at least one poroid
The substrate of array of structures；Wherein, each cavernous structure array is using corresponding aperture through one in the corresponding three coloured light of RGB
Kind light.
In above-mentioned color filer, the type of substrate include refractive index be greater than default refractive index dielectric material or
Metallic film.
In above-mentioned color filer, the color filer further include: the light shield layer that covers on the substrate, in institute
State the protective layer covered on light shield layer.
In above-mentioned color filer, when the type of substrate is the dielectric material that refractive index is greater than default refractive index,
And the dielectric material it is non-conductive when, the color filer further include: the conductive film covered on the protective layer.
In above-mentioned color filer, the hole type of the cavernous structure is round or regular polygon.
In above-mentioned color filer, the size in the aperture by the refractive index of the substrate, the thickness of the substrate and
The resonant wavelength of the corresponding three coloured light of RGB determines.
In above-mentioned color filer, the cavernous structure in three kinds of apertures of the corresponding three coloured light correspondence of RGB.
The embodiment of the present application provides a kind of cmos image sensor CIS preparation method, the side
Method includes:
The deposition substrate on CIS circuit；
According to default aperture, at least one cavernous structure array, the size in the default aperture are etched on the substrate
Three coloured light corresponding with RGB is corresponding.
In the above-mentioned methods, described on CIS circuit after deposition substrate, the method also includes:
Light shield layer is made on the substrate；
The coat protective layer on the light shield layer.
In the above-mentioned methods, the type of substrate includes the dielectric material or metal foil that refractive index is greater than default refractive index
Film.
In the above-mentioned methods, when the type of substrate is when refractive index is greater than the dielectric material for presetting refractive index and described
It is described on the light shield layer after coat protective layer when dielectric material is non-conductive, the method also includes:
The sputter conductive film on the protective layer.
It includes: to be etched with that the embodiment of the present application, which provides a kind of color filer and CIS preparation method, the color filer,
The substrate of at least one cavernous structure array；Wherein, each cavernous structure array is corresponding through RGB using corresponding aperture
One of three coloured light light.It is various sizes of by being arranged in pseudo-colour filtering on piece using above-mentioned color filer implementation
Cavernous structure array, it is corresponding to penetrate the corresponding three coloured light of RGB, without making the colour of translucency Red Green Blue respectively
Filter membranous layer thereby reduces the complexity of CF processing technology；Reduce colored light filter membrane layer, thereby reduces the thickness of CF.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of color filer provided by the embodiments of the present application；
Fig. 2 is a kind of top view of tetra- color lumps of RGGB of illustrative CF provided by the embodiments of the present application；
Fig. 3 is a kind of flow chart of CIS preparation method provided by the embodiments of the present application；
Fig. 4 is a kind of schematic diagram for illustratively preparing CIS provided by the embodiments of the present application；
Fig. 5 is a kind of section schematic diagram of illustrative CIS structure provided by the embodiments of the present application.
Specific embodiment
It should be appreciated that specific embodiment described herein is only used to explain the application.It is not used to limit the application.
Embodiment one
The embodiment of the present application provides a kind of color filer 1, as shown in Figure 1, the color filer 1 includes: to be etched with
The substrate 10 of at least one cavernous structure array；Wherein, each cavernous structure array is corresponding through RGB using corresponding aperture
One of three coloured light light.
A kind of color filer provided by the embodiments of the present application is suitable for making under the scene of CIS.
In the embodiment of the present application, the aperture of each cavernous structure array is identical, at least one poroid interface array includes
Three kinds of aperture sizes, each middle aperture size correspond to one of the corresponding three coloured light of RGB light；When light source irradiates color filer
When, different aperture size selections is through corresponding feux rouges, blue light or green light (the corresponding three coloured light of RGB).
Optionally, the type of substrate includes the dielectric material or metallic film that refractive index is greater than default refractive index.
In the embodiment of the present application, metallic film can be the noble metal films such as silicon thin film or gold, silver, specific basis
Actual conditions are selected, and the embodiment of the present application does not do specific restriction.
Optionally, the color filer 1 further include: the light shield layer 11 that is covered on the substrate 10, in the shading
The protective layer 12 covered on layer 11.
In the embodiment of the present application, light shield layer and protective layer are successively covered on substrate, are obtained color filer, are specifically covered
The operation of lid light shield layer and protective layer and etch at least one cavernous structure array operation operation order according to the actual situation
It is selected, the embodiment of the present application does not do specific restriction.
Optionally, when the type of substrate is the dielectric material that refractive index is greater than default refractive index, and the medium material
When expecting non-conductive, the color filer further include: the conductive film 13 covered on the protective layer 12.
In the embodiment of the present application, when type of substrate is the dielectric material that refractive index is greater than default refractive index, and the medium
When material is non-conductive, need to cover the conductive film of layer of transparent on the protection layer, the conductive film can for tin indium oxide (ITO,
Indium Tin Oxides), ITO can cut off the electron radiation, ultraviolet light and far infrared being harmful to the human body.
Optionally, the hole type of the cavernous structure is round or regular polygon.
In the embodiment of the present application, regular polygon includes triangle, square, pentagon, hexagon etc., specifically according to reality
Border situation is selected, and the embodiment of the present application does not do specific restriction.Preferably, the hole type of cavernous structure is circular light transmission
Better effect.
Optionally, the size in the aperture passes through the refractive index of the substrate, the thickness of the substrate and RGB corresponding three
The resonant wavelength of coloured light determines.
Optionally, the cavernous structure in the corresponding three kinds of apertures of the corresponding three coloured light of the RGB.
In the embodiment of the present application, for three coloured light corresponding for R, G, B, the corresponding diameter of the light of each color
Array of circular apertures.By taking the color filer of 80nm thickness as an example, for feux rouges, aperture 100nm；For green light, aperture
For 150nm；For blue light, aperture 200nm.
Illustratively, as shown in Fig. 2, processing array of circular apertures on the silicon thin film of 80nm thickness, the pseudo-colour filtering of each color
Piece processes the array of circular apertures of different-diameter respectively, wherein the array of circular apertures in the upper left corner is realized to the selection transmission of feux rouges, the lower left corner
Realize that selection transmission, the array of circular apertures in the lower right corner to green light realize that the selection to blue light penetrates with the array of circular apertures in the upper right corner.
It is understood that by the way that various sizes of cavernous structure array is arranged in pseudo-colour filtering on piece, it is corresponding to penetrate RGB
Corresponding three coloured light thereby reduces CF's without making the colored light filter membrane layer of translucency Red Green Blue respectively
Processing technology；Reduce colored light filter membrane layer, thereby reduces the thickness of CF.
Embodiment two
The embodiment of the present application provides a kind of cmos image sensor CIS preparation method, such as Fig. 3 institute
Show, method includes:
S101, the deposition substrate on CIS circuit.
In the embodiment of the present application, type of substrate includes the dielectric material or metal foil that refractive index is greater than default refractive index
Film.
In the embodiment of the present application, CIS preparation facilities processes the CIS circuit of building CIS on wafer, later, in CIS electricity
Road deposits a laminar substrate of specified thickness.
Illustratively, substrate thickness 80nm can be specifically adjusted according to the actual situation, and the embodiment of the present application is not done
It is specific to limit.
In the embodiment of the present application, type of substrate includes the dielectric material or metal foil that refractive index is greater than default refractive index
Film.
In the embodiment of the present application, metallic film can be the noble metal films such as silicon thin film or gold, silver, specific basis
Actual conditions are selected, and the embodiment of the present application does not do specific restriction.
S102, according to preset aperture, at least one cavernous structure array is etched on substrate, preset aperture size with
The corresponding three coloured light of RGB is corresponding.
After CIS preparation facilities deposited substrate on CIS circuit, CIS preparation facilities is according to default aperture, in substrate
Upper at least one cavernous structure array of etching.
Illustratively, CIS preparation facilities is according to required Bayer array color, using 1 red 2 green 1 it is blue put in order,
Corresponding four cavernous structure arrays are etched on substrate.
Optionally, the hole type of cavernous structure is round or regular polygon, is specifically selected according to the actual situation, this
Application embodiment does not do specific restriction.
In the embodiment of the present application, regular polygon includes triangle, square, pentagon, hexagon etc., specifically according to reality
Border situation is selected, and the embodiment of the present application does not do specific restriction.Preferably, the hole type of cavernous structure is circular light transmission
Better effect.
Optionally, the size in the aperture passes through the refractive index of the substrate, the thickness of the substrate and RGB corresponding three
The resonant wavelength of coloured light determines.
In the embodiment of the present application, on CIS circuit after deposition substrate, CIS preparation facilities makes light shield layer on substrate；
And the coat protective layer on light shield layer.
In the embodiment of the present application, when type of substrate is the dielectric material and dielectric material that refractive index is greater than default refractive index
When non-conductive, CIS preparation facilities sputter conductive film ITO on the protection layer.
Illustratively, as shown in figure 4, CIS preparation facilities deposits the silicon thin film of 80nm thickness on CIS circuit, and it is thin in silicon
The cavernous structure array of different pore size is etched on film.
Illustratively, as shown in figure 5, be CIS structure sectional drawing, wherein top layer be upper lens, successively downwards are as follows:
CF, photodiode and metal line.
It is understood that by the way that various sizes of cavernous structure array is arranged in pseudo-colour filtering on piece, it is corresponding to penetrate RGB
Corresponding three coloured light reduces CF processing work without making the colored light filter membrane layer of translucency Red Green Blue respectively
The complexity of skill thereby reduces the complexity for preparing CIS；Reduce colored light filter membrane layer, reduces the thickness of CF, and then drop
The low thickness of CIS.
Embodiment three
The embodiment of the present application provides a kind of storage medium, is stored thereon with computer program, above-mentioned computer-readable storage
Media storage has one or more program, and said one or multiple programs can be executed by one or more processor, be answered
For in CIS, which to realize the CIS preparation method as described in embodiment two.
Specifically, the corresponding program instruction of one of the present embodiment CIS preparation method read by an electronic equipment or
It is performed, includes the following steps:
The deposition substrate on CIS circuit；
According to default aperture, at least one cavernous structure array, the size in the default aperture are etched on the substrate
Three coloured light corresponding with RGB is corresponding.
In an embodiment of the present invention, further, on CIS circuit after deposition substrate, said one or multiple
Program is executed by said one or multiple processors, is also performed the steps of
Light shield layer is made on the substrate；
The coat protective layer on the light shield layer.
In an embodiment of the present invention, further, type of substrate includes the medium material that refractive index is greater than default refractive index
Material or metallic film.
In an embodiment of the present invention, further, when the type of substrate is Jie that refractive index is greater than default refractive index
It is described on the light shield layer after coat protective layer when material and when the dielectric material is non-conductive, said one or
Multiple programs are executed by said one or multiple processors, are also performed the steps of
The sputter conductive film on the protective layer.
The above, the only preferred embodiment of the application, are not intended to limit the protection scope of the application.
Claims (11)
1. a kind of color filer, which is characterized in that the color filer includes: to be etched at least one cavernous structure array
Substrate；Wherein, each cavernous structure array is using corresponding aperture through one of the corresponding three coloured light of RGB light.
2. color filer according to claim 1, which is characterized in that the type of substrate includes refractive index greater than default
The dielectric material or metallic film of refractive index.
3. color filer according to claim 1, which is characterized in that the color filer further include: in the base
The light shield layer covered on plate, the protective layer covered on the light shield layer.
4. color filer according to claim 3, which is characterized in that when the type of substrate is refractive index greater than default
When the dielectric material of refractive index, and when the dielectric material is non-conductive, the color filer further include: on the protective layer
The conductive film of covering.
5. color filer according to claim 1, which is characterized in that the hole type of the cavernous structure is for circle or just
Polygon.
6. color filer according to claim 1, which is characterized in that the size in the aperture by the substrate refraction
The resonant wavelength of rate, the thickness of the substrate and the corresponding three coloured light of RGB determines.
7. color filer according to claim 1, which is characterized in that three kinds of holes of the corresponding three coloured light correspondence of RGB
The cavernous structure of diameter.
8. a kind of cmos image sensor CIS preparation method, which is characterized in that the described method includes:
The deposition substrate on CIS circuit；
According to default aperture, at least one cavernous structure array, the size and RGB in the default aperture are etched on the substrate
Corresponding three coloured light is corresponding.
9. CIS preparation method according to claim 8, which is characterized in that it is described on CIS circuit after deposition substrate,
The method also includes:
Light shield layer is made on the substrate；
The coat protective layer on the light shield layer.
10. according to the described in any item CIS preparation methods of claim 8 or 9, which is characterized in that the type of substrate includes folding
Penetrate dielectric material or metallic film that rate is greater than default refractive index.
11. CIS preparation method according to claim 10, which is characterized in that when the type of substrate is greater than for refractive index
When the dielectric material of default refractive index and when the dielectric material is non-conductive, the coat protective layer on the light shield layer it
Afterwards, the method also includes:
The sputter conductive film on the protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910329347.3A CN110058341A (en) | 2019-04-23 | 2019-04-23 | A kind of color filer and CIS preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910329347.3A CN110058341A (en) | 2019-04-23 | 2019-04-23 | A kind of color filer and CIS preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110058341A true CN110058341A (en) | 2019-07-26 |
Family
ID=67320174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910329347.3A Pending CN110058341A (en) | 2019-04-23 | 2019-04-23 | A kind of color filer and CIS preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110058341A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794499A (en) * | 2019-10-31 | 2020-02-14 | 歌尔股份有限公司 | Light filter |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0340968A3 (en) * | 1988-04-30 | 1992-05-06 | Seiko Epson Corporation | Thin film device and method of manufacturing the same |
| EP1008870A1 (en) * | 1998-12-09 | 2000-06-14 | Nec Corporation | Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography |
| CN101887900A (en) * | 2009-05-11 | 2010-11-17 | 索尼公司 | Two-dimensional solid-state image capture device and polarization-light data processing method thereof |
| CN102103224A (en) * | 2009-12-18 | 2011-06-22 | 乐金显示有限公司 | Color filter using surface plasmon, liquid crystal display device and method for fabricating the same |
| CN103733340A (en) * | 2011-07-28 | 2014-04-16 | 索尼公司 | Solid-state imaging element and imaging system |
| US20140191113A1 (en) * | 2013-01-04 | 2014-07-10 | California Institute Of Technology | System and method for color imaging with integrated plasmonic color filters |
| CN108028259A (en) * | 2015-10-14 | 2018-05-11 | 索尼半导体解决方案公司 | Image-forming component, the manufacture method of image-forming component, the manufacture method of imaging device and imaging device |
-
2019
- 2019-04-23 CN CN201910329347.3A patent/CN110058341A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0340968A3 (en) * | 1988-04-30 | 1992-05-06 | Seiko Epson Corporation | Thin film device and method of manufacturing the same |
| EP1008870A1 (en) * | 1998-12-09 | 2000-06-14 | Nec Corporation | Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography |
| CN101887900A (en) * | 2009-05-11 | 2010-11-17 | 索尼公司 | Two-dimensional solid-state image capture device and polarization-light data processing method thereof |
| CN102103224A (en) * | 2009-12-18 | 2011-06-22 | 乐金显示有限公司 | Color filter using surface plasmon, liquid crystal display device and method for fabricating the same |
| CN103733340A (en) * | 2011-07-28 | 2014-04-16 | 索尼公司 | Solid-state imaging element and imaging system |
| US20140191113A1 (en) * | 2013-01-04 | 2014-07-10 | California Institute Of Technology | System and method for color imaging with integrated plasmonic color filters |
| CN108028259A (en) * | 2015-10-14 | 2018-05-11 | 索尼半导体解决方案公司 | Image-forming component, the manufacture method of image-forming component, the manufacture method of imaging device and imaging device |
Non-Patent Citations (2)
| Title |
|---|
| HONG-SHIK LEE 等: ""Color filter based on a subwavelength patterned metal grating"", 《OPTICS EXPRESS》 * |
| 王嘉星 等: ""表面等离激元结构色研究进展"", 《光电工程》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794499A (en) * | 2019-10-31 | 2020-02-14 | 歌尔股份有限公司 | Light filter |
| WO2021082053A1 (en) * | 2019-10-31 | 2021-05-06 | 潍坊歌尔微电子有限公司 | Optical filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9658372B2 (en) | Optical filtering structure in the visible and/or infrared domain | |
| CN103913886B (en) | Color film substrate, display device and manufacturing method of color film substrate | |
| CN106354305B (en) | A kind of touch-control display module, its production method and display device | |
| CN104020604B (en) | Two-sided transparent display device | |
| CN107818995A (en) | The method for manufacturing imaging sensor | |
| CN102681067A (en) | Color filter and preparation method thereof | |
| JP6312241B2 (en) | Transparent substrate | |
| CN103033981A (en) | Color filter substrate and manufacturing method thereof as well as liquid crystal panel | |
| WO2018090572A1 (en) | Display substrate and manufacturing method therefor, and display panel | |
| CN100527430C (en) | Cmos image sensor and manufacturing method thereof | |
| CN105242339B (en) | A kind of four colo(u)r filters | |
| CN110058341A (en) | A kind of color filer and CIS preparation method | |
| JP2013207053A5 (en) | ||
| CN110190094A (en) | A kind of display panel and preparation method thereof, intelligent terminal | |
| CN104465688A (en) | Micro lens structure of image sensor and manufacturing method thereof | |
| US20230028949A1 (en) | Filtering structure for an infrared cut filter | |
| CN105974643B (en) | Color membrane substrates and its manufacturing method | |
| CN102654594A (en) | Half-transmitting and half-reflecting type color filter and manufacturing method thereof | |
| CN110764638B (en) | Touch substrate and touch device | |
| CN103376481A (en) | Optical lens and method for manufacturing optical lens | |
| KR20160085132A (en) | Conductive structure, Touch panel and method for manufacturing the same | |
| US20230335652A1 (en) | Optical filter structure for arbitrary combination of rgb and ir wavelength ranges and its manufacturing method | |
| CN105242450B (en) | A kind of colour filtering chip basic board and its manufacturing method | |
| CN105607336B (en) | CF substrate and preparation method thereof | |
| CN203720804U (en) | Touch display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190726 |
|
| RJ01 | Rejection of invention patent application after publication |