CN109735822B - Reaction chamber and semiconductor device - Google Patents
Reaction chamber and semiconductor device Download PDFInfo
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- CN109735822B CN109735822B CN201811354815.4A CN201811354815A CN109735822B CN 109735822 B CN109735822 B CN 109735822B CN 201811354815 A CN201811354815 A CN 201811354815A CN 109735822 B CN109735822 B CN 109735822B
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Abstract
Disclosed are a reaction chamber and a semiconductor apparatus, the reaction chamber including: a chamber body; the base assembly is arranged in the chamber main body and comprises a metal heating plate and a grounding plate for grounding, and the metal heating plate is provided with a bearing surface for bearing the substrate; the processing assembly comprises an outer deposition ring surrounding the bearing surface, the processing assembly is used for forming a process area in a matched mode with the base assembly, the reaction chamber further comprises a grounding ring, the grounding ring is connected between the outer deposition ring and the grounding disc and used for providing a grounding path from the outer deposition ring to the grounding disc when the processing assembly and the base assembly are matched to form the process area, the problem that ignition is caused due to discharge of the outer deposition ring when the heating disc made of metal materials is used can be effectively solved, and the improvement of a film coating effect is facilitated.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor equipment.
Background
Physical Vapor Deposition (PVD) is a technique of vaporizing a material source (solid or liquid) surface into gaseous atoms, molecules or partially ionized ions by a Physical method under vacuum, and depositing a thin film with a specific function on a substrate surface by low-pressure gas (or plasma). The main methods of physical vapor deposition include vacuum evaporation, sputter coating, arc plasma coating, ion coating, and molecular beam epitaxy.
In conventional physical vapor deposition, a substrate is placed on a surface of an electrostatic chuck (electrostatic chuck) located within a reaction chamber, which may provide a vacuum environment. In the reaction chamber, a radio frequency power supply and a direct current power supply provide voltage for the target material, the target material under negative bias voltage is exposed to inert gas (such as Ar), plasma is generated by inert gas discharge, the generated plasma bombards the target material to sputter target material atoms, and the sputtered atoms are accumulated on a substrate to form a deposition film.
The electrostatic chuck in the prior art generally adopts a stainless steel heater, and the use of the stainless steel heater as a heating source easily causes the ignition phenomenon of a processing assembly in the radio frequency sputtering process, thereby influencing the film coating effect.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a reaction chamber and a semiconductor device, which can effectively solve the problem of sparking caused by discharge of a processing assembly when a stainless steel heating plate is used, and improve the film coating effect.
According to an aspect of the present invention, there is provided a reaction chamber comprising: a chamber body; the base assembly is arranged in the chamber main body and comprises a metal heating plate and a grounding plate for grounding, and the metal heating plate is provided with a bearing surface for bearing a substrate; a processing assembly comprising an outer deposition ring surrounding the load-bearing surface, the processing assembly configured to cooperate with the susceptor assembly to form a process zone, wherein the reaction chamber further comprises a grounding ring coupled between the outer deposition ring and the grounding plate to provide a grounding path from the outer deposition ring to the grounding plate when the processing assembly cooperates with the susceptor assembly to form the process zone.
Preferably, the processing assembly further comprises a liner surrounding the process region, wherein the grounding ring is configured to provide a grounding path for the liner to the grounding plate when the processing assembly and the susceptor assembly cooperate to form the process region.
Preferably, the reaction chamber further comprises contacts for providing electrical contact between the grounding ring and the grounding disk.
Preferably, the reaction chamber further comprises a resilient structure for providing electrical contact between the ground ring and the liner.
Preferably, the ground ring includes: a ring structure surrounding the base assembly; a first extension extending radially inward from one end of the annular structure, the first extension comprising a first surface for contacting the outer deposition ring; and a second extension extending radially outward from the other end of the ring structure, the second extension including a second surface for contacting the contact and a third surface for securing the elastic structure.
Preferably, the resilient structure is secured to the third surface by a fastening plate and a plurality of fasteners.
Preferably, the processing assembly further comprises an inner deposition ring surrounding the metallic heating disk to provide electrical isolation between the metallic heating disk and the ground ring.
Preferably, the inner deposition ring is made of an insulating material.
Preferably, the base assembly further comprises a spacer disc located between the grounding disc and the metal heating disc for providing electrical isolation between the metal heating disc and the grounding disc.
Preferably, the spacer disc comprises a ceramic disc.
Preferably, the contact comprises a beryllium copper reed.
Preferably, the elastic structure comprises a bent copper sheet capable of being elastically deformed under the compression of the grounding ring and the lining.
Preferably, the elastic structure has a compression of 1-50 mm.
According to another aspect of the present invention, a semiconductor device is provided, which comprises the reaction chamber.
According to the reaction chamber and the semiconductor device, the grounding path from the outer deposition ring to the grounding plate is provided by the grounding ring made of the high-conductivity material, so that the outer deposition ring is at zero potential in the coating process, the ignition phenomenon caused by the discharge of the outer deposition ring when the heating plate made of the stainless steel is used is effectively avoided, the coating effect can be improved, and the process cost is reduced.
In the preferred embodiment, the grounding ring is connected with the lining to provide a grounding path from the lining to the grounding plate, so that the phenomenon of sparking caused by the discharge of the lining in the coating process is avoided, and the coating effect can be further improved.
In a preferred embodiment, the inner deposition ring is made of a high-temperature-resistant insulating material, and the inner deposition ring realizes electrical isolation between the grounding ring and the heating plate, so that the influence of bias voltage on the heating plate on the grounding ring can be shielded.
In a preferred embodiment, isolation between the heating plate and the ground plate is achieved using an insulating isolation plate, which shields the influence of the bias on the heating plate on the ground plate.
In the preferred embodiment, the grounding ring is connected with the grounding disc through the beryllium copper reed, so that the grounding of the grounding ring can be realized, the radio frequency can be shielded, and the process stability in the reaction cavity is improved.
In the preferred embodiment, the compression amount of the elastic structure is 1-50mm, so that the ascending adjusting space of the base assembly is increased, and the adjusting range of the distance between the target and the substrate in the coating process is enlarged.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
FIG. 1 shows a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the invention;
fig. 2 illustrates an exploded view of the internal structure of a semiconductor reaction chamber according to an embodiment of the present invention;
FIG. 3 shows a schematic cross-sectional view and a close-up view of the inner liner and outer deposition ring in accordance with an embodiment of the invention;
FIG. 4 shows a schematic cross-sectional view of an inner deposition ring according to an embodiment of the invention;
figure 5 shows a schematic cross-sectional view and a close-up view of a base assembly and ground ring according to an embodiment of the invention;
FIG. 6 shows a schematic cross-sectional view of a semiconductor reaction chamber during a coating process according to an embodiment of the invention;
fig. 7 shows an enlarged schematic view according to region a in fig. 6.
The figure includes: a reaction chamber 100; a chamber body 110; a side wall 102; a bottom wall 103; a substrate 105; a cover plate assembly 130; a magnetron 131; a target backing plate 132; a target 133; a feed terminal 135; a seal ring 136; a base member 120; a lifting mechanism 121; a bellows 122; a ground plate 123; a separation disc 124; a heating plate 125; a processing component 150; an inner liner 151; an outer deposition ring 152; a spacer ring 153; an inner deposition ring 154; a ground ring 141; a resilient structure 142; a contact 143; a fastening plate 181; fastener 182 process zone 210; a plasma 201; a DC source 171; an RF source 172; a controller 173; a gas source 174; a pump 175; a first bent portion 213; a second bent portion 212; a U-shaped channel 214; a bearing surface 251; a first edge 252; a second edge 253; an annular wedge 221; the gap 222; the first surface 321; a second surface 322; a third surface 323; ring structures 211, 223, 224, 231, 261, and 272; extensions 232, 233, 262, and 282; the stages 271 and 281; contact points 310 and 320.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.
Fig. 1 and 2 respectively show a cross-sectional view and an enlarged view of an internal structure of a semiconductor reaction chamber according to an embodiment of the present invention, and the structure of the semiconductor reaction chamber according to an embodiment of the present invention will be described below with reference to fig. 1 and 2.
The reaction chamber 100 is, for example, a sputtering chamber, and may deposit metal or semiconductor material by Physical Vapor Deposition (PVD), such as aluminum, copper, tantalum nitride, tantalum carbide, tungsten nitride, lanthanum oxide, titanium, and the like.
As shown in fig. 1, the reaction chamber 100 includes a chamber body 110, a susceptor assembly 120, and a processing assembly 150.
The chamber body 110 has sidewalls 102, a bottom wall 103, and a lid assembly 130 surrounding a process region 210. The chamber body 110 is made, for example, by stainless steel welding or a single piece of aluminum. In a particular embodiment, the sidewall 102 further includes slit valves (not shown) for providing an outlet and an inlet for the substrate 105 in the reaction chamber 100.
The lid assembly 130 includes a magnetron 131 and a target backing plate 132. The target backing plate 132 is used to place the target 133 during the coating process and expose the target 133 to the process region 210 of the reaction chamber 100. The magnetron 131 with the rotating mechanism is used for improving the ionization efficiency of inert gas during the coating process, maintaining the discharge reaction, restraining plasma near the target material, effectively and uniformly bombarding the target material and realizing the uniformity of coating.
The processing assembly 150 includes a plurality of structures that can be replaced, removed from the reaction chamber 100 to clean sputtered deposits from the surfaces of the structures, replace/repair corrosion structures, and adaptively adjust the reaction chamber 100 according to process requirements.
The processing assembly 150 includes an inner liner 151 surrounding the process region 210, an outer deposition ring 152 surrounding the load bearing surface of the pedestal assembly 120, and an inner deposition ring 154.
The inner liner 151 and outer deposition ring 152 are disposed around the process zone 210 to isolate the process zone 210 from the chamber body 110 to reduce deposition of sputtered deposits on the chamber body 110.
The inner deposition ring 154 extends circumferentially around the heating disk 125 of the susceptor assembly 120 for insulating the heating disk 125.
The processing assembly further comprises an isolation ring 153, the isolation ring 153 being disposed between the target 133, the target backing plate 132 and the chamber body 110 for electrically isolating the target 133 from the target backing plate 132 and the chamber body 110.
In addition, in order to prevent the vacuum inside the reaction chamber 100 from leaking, the reaction chamber 100 further includes a sealing ring 136, and the sealing ring 136 is disposed between the sidewall 102, the cover plate assembly 130, and the isolation ring 153.
The susceptor assembly 120 has a carrying surface for carrying the substrate 105, and the susceptor assembly 120 is adapted to cooperate with the processing assembly 150 during a coating process to form a process zone 210 over the substrate 105.
The susceptor assembly 120 is connected to the bottom wall 103 by a lifting mechanism 121, and the lifting mechanism 121 is used to drive the susceptor assembly 120 to move in a vertical direction during a coating process so that the susceptor assembly 120 is far from the outer deposition ring 152 (as shown in fig. 1) or close to the outer deposition ring 152 (as shown in fig. 6). When the susceptor assembly 120 is in the position shown in fig. 1, lift pins (not shown) are moved through the susceptor assembly 120 to separate the substrate 105 from the susceptor assembly 120 so that a wafer transfer mechanism (e.g., a single-arm robot) disposed outside the reaction chamber 100 can successfully exchange substrates.
The reaction chamber 100 further includes a bellows 122 disposed between the susceptor assembly 120 and the bottom wall 103 for providing internal and external isolation of the reaction chamber within the chamber body 110. The bellows 122 is electrically conductive and may provide an electrical connection between the base assembly 120 and the chamber body 110.
FIG. 3 illustrates a cross-sectional view and a partial enlarged view of the inner liner and outer deposition ring in accordance with an embodiment of the present invention. As shown in fig. 3, the inner liner 151 and the outer deposition ring 152 are staggered with respect to each other.
The liner 151 includes a ring structure 211 surrounding the process region 210, an upper end of the ring structure 211 for coupling to an isolation ring, the ring structure 211 for covering the sidewall 102 of the chamber body to protect the sidewall 102 of the chamber body from deposition of sputtered deposits.
The liner 151 further includes a first bent portion 213 extending radially inward from the bottom end of the annular structure 211 and a second bent portion 212 bent upward from the first bent portion 213. The loop 211, the first bent portion 213 and the second bent portion 212 form a U-shaped channel 214. In one embodiment, the height of the second bending portion 212 is smaller than the height of the ring structure 211.
The outer deposition ring 152 and the liner 151 cooperate to reduce the deposition of sputtered deposits on the bottom wall of the chamber body. The outer deposition ring 152 is made of a material that is resistant to plasma erosion, such as a metallic material (e.g., stainless steel, titanium, or aluminum) or a ceramic material (e.g., alumina).
The outer deposition ring 152 includes an annular wedge 221, the annular wedge 221 extending circumferentially around the edge of the substrate 105. The annular wedge 221 includes a radially inwardly extending ramp structure that partially overlies the base assembly.
The outer deposition ring 152 also includes a ring structure 223 and a ring structure 224. The annular structure 223 extends vertically radially downward from an end of the annular wedge 221 remote from the base assembly 120 to the U-shaped channel 214 of the liner 151. An annular structure 224 extends radially vertically downward from an end of the annular wedge 221 proximate the base assembly 120. The annular structure 223, the annular wedge 221, and the annular structure 224 form a gap 222, and the second bent portion 212 of the liner 151 is partially located in the gap 222.
The space or gap between the inner liner 151 and the outer deposition ring 152 forms an S-shaped path for the plasma to travel, which shape may impede the passage of the plasma to confine the plasma to the region above the substrate during the coating process operation.
Fig. 4 shows a schematic cross-sectional view of the inner deposition ring 154 according to an embodiment of the present invention, and the structure of the inner deposition ring 154 according to an embodiment of the present invention will be described below with reference to fig. 1 and 4.
As shown in FIG. 4, the inner deposition ring 154 includes an annular structure 261 and an extension 262. The ring structure 261 extends circumferentially around the heating plate 125 in fig. 1. An extension 262 extends radially outwardly from annular structure 261, with the edge of extension 262 extending to the depending edge of spacer disk 124. And the upper surface of the extension 262 is lower than the upper surface of the ring structure 261. In one embodiment, the inner deposition ring 126 is made of a high temperature resistant insulating material (quartz or ceramic) to insulate the heater plate 125.
Figure 5 illustrates a cross-sectional view and a partial enlarged view of a base assembly and ground ring according to an embodiment of the present invention.
As shown in fig. 5, the susceptor assembly 120 includes a ground plate 123, a spacer plate 124, and a heating plate 125, which are sequentially stacked.
The heating plate 125 has a stepped structure, and includes a carrying surface 251 for carrying the substrate 105, wherein the carrying surface 251 is used for receiving and supporting the substrate during the coating process, and the surface is parallel to the sputtering surface of the target.
The heating disk 125 also includes a first edge 252 and a second edge 253, the first edge 252 terminating before the overhanging edge of the substrate and the second edge 253 terminating after the overhanging edge of the substrate 105.
The isolation plate 124 is a concave structure, and includes a bearing platform 271 for bearing the heating plate 125, and a ring structure 272 extending upward along the edge of the bearing platform 271, the ring structure 272 forms a receiving cavity with an upper opening in the isolation plate 124, the heating plate 125 is located in the receiving cavity, and the ring structure 272 extends circumferentially around the second edge 253 of the heating plate 125.
The ground plate 123 has a stepped structure, and includes a support 281 for supporting the spacer 124, and an extension part 282 extending radially outward along an edge of the support 281, wherein an upper surface of the extension part 282 is lower than an upper surface of the support 281.
In the present embodiment, the heating plate 125 is an electrostatic chuck, a heater, or a combination thereof. The heater plate 125 includes a dielectric body having an electrode embedded therein. During the coating process, the heating plate 125 is in a biased state and the grounding plate 123 is in a zero potential state, and the isolation plate 124 is used to provide electrical isolation between the heating plate 125 and the grounding plate 123. In one embodiment, the ground plate 123 and the heating plate 125 are generally made of a metallic material (e.g., stainless steel or aluminum) and the isolation plate 124 is generally made of a ceramic material.
In this embodiment, the heating plate 125 is made of a metal material (e.g., stainless steel or aluminum), which is likely to cause an outer deposition ring or an inner liner to discharge during the rf sputtering process, thereby causing a sparking phenomenon and affecting the coating effect.
To address sparking due to outer deposition ring or liner discharge, the reaction chamber 100 further includes a grounding ring 141, the grounding ring 141 being used to provide a grounding path for the liner and outer deposition ring to the grounding plate 123 during the plating process operation.
As shown in fig. 5, the ground ring 141 includes an annular structure 231 that extends circumferentially around the edge of the base assembly 120.
The ground ring 141 also includes an extension 232 extending radially inward from the upper end of the annular structure 231. The extension 232 includes a first surface 321 for contacting the outer deposition ring. The extension 232 at least partially covers the inner deposition ring 154, and the inner deposition ring 154 can provide electrical isolation between the ground ring 141 and the heating plate 125.
The ground ring 141 further includes an extension 233 extending radially outward from a lower end of the annular structure 231. The extension 233 includes a second surface 323 for contacting the contact 143 and a third surface 324 for securing the elastic structure 142.
The contact 143 is fixed to the extension 282 of the ground plate 123 for providing a ground path from the ground ring 141 to the ground plate 123. the contact 143 is made of a highly resilient and conductive material (e.g., beryllium copper or stainless steel) and can be compressed when the ground ring 141 contacts the ground plate 123, ensuring good electrical contact between the ground ring 141 and the ground plate 123. In one embodiment, the contact 143 is made of beryllium copper, which not only ensures good electrical contact between the ground ring 141 and the ground plate 123, but also shields rf radiation, which is beneficial to improve the stability of the process environment in the process area.
The elastic structure 142 is fixed on the third surface 324 of the extension 233 by a fastening plate 181 and a plurality of fasteners (e.g., two fasteners) 182 for providing a grounding path between the liner to the grounding ring 141. The fastener 182 is, for example, one of a bolt, screw, rivet, weld, or other attachment.
In the present embodiment, the elastic structure 142 is made of a highly elastic and conductive material (e.g., beryllium copper or stainless steel). In one embodiment, the elastic structure 142 is a bent copper sheet, when the base assembly 120 is located at the position shown in fig. 6, the elastic structure 142 is in contact with the lining 151, and the elastic structure 142 is compressed to generate an elastic force, which ensures good electrical contact between the elastic structure 142 and the lining 151.
The height, width, and amount of compression of the elastic structure 142 may be adaptively adjusted according to the amount of contact between the elastic structure 142 and the inner liner 151. In one embodiment, the compression of the elastic structure 142 is 1-50mm, which can increase the adjustment space for the base assembly 120 to ascend, and is beneficial to increasing the adjustment range of the distance between the target and the substrate in the coating process.
In this embodiment, the ground ring 141 is fabricated from a highly conductive material (e.g., stainless steel or aluminum) and provides a ground path for the inner liner 151 and outer deposition ring 152 to the ground pad 123. The inner liner 151 and the outer deposition ring 152 are always at zero potential in the coating process, so that the ignition phenomenon caused by the discharge of the outer deposition ring 152 or the inner liner 151 when the heating plate made of stainless steel is used is effectively avoided, and the coating effect is favorably improved.
Fig. 6 is a schematic structural view illustrating a semiconductor reaction chamber during a coating process according to an embodiment of the present invention. As shown in fig. 6, the reaction chamber 100 further includes a DC source 171, an RF (Radio Frequency) source 172, a controller 173, a gas source 174, and a vacuum pump 175 connected to the chamber body 110. A DC source 171 and an RF source 172 are connected to the target 133 for providing a radio frequency bias and/or a direct current bias to the target 133 during a coating process stage. In one embodiment, the RF source 172 is connected to the target 133 through a feed end 135, the feed end 135 being located to the left or right of the centerline of the target 133.
The controller 173 is used to control the process of the coating process of the reaction chamber 100. In one embodiment, the controller 173 includes multiple instruction sets for controlling the DC source 171, the RF source 172, the gas source 174, and the vacuum pump 175, respectively. In one embodiment, the controller 173 further includes an operation monitoring program for monitoring the reaction process inside the reaction chamber 100 in real time.
The gas source 174 is used to provide an inert gas (e.g., Ar) to the reaction chamber 100, which is supplied from the gas source 174 via a conduit to a process zone 210 inside the reaction chamber 100. The inert gas discharge generates a plasma 201, and the generated plasma 201 bombards the target 133 to sputter target atoms, which are deposited as a deposition film on the substrate 105. In one embodiment, the gas source 174 may also provide a reactive gas (e.g., oxygen, nitrogen, etc.) to the interior of the reaction chamber 100, which may react with the sputtered material and deposit a deposited film on the substrate 105.
The gas after the reaction and the by-products are exhausted through an exhaust line having a throttle valve therein to control the pressure of the gas inside the reaction chamber 100. The exhaust line is connected to at least one vacuum pump 175, and the vacuum pump 175 serves to set the atmosphere inside the reaction chamber 100 to a vacuum atmosphere.
During the coating process, a floating potential is provided to the substrate 105 by the base assembly 120. At the same time, the lifting mechanism 121 drives the susceptor assembly 120 to the position shown in fig. 6, the grounding ring 141 contacts the outer deposition ring 152 at the contact point 310 shown in fig. 7, and the grounding ring 141 and the contact member 143 form a grounding path from the outer deposition ring 152 to the grounding plate 123.
At the same time, the elastic structure 142 fixed on the grounding ring 141 rises, the elastic structure 142 contacts the liner 151 at the contact point 320 shown in fig. 7, and the elastic structure 142, the grounding ring 141 and the contact 143 form a grounding path from the liner 151 to the grounding plate 123.
As the liner 151 and outer deposition ring 152 rise, the liner 151, outer deposition ring 152, and substrate 105 form a closed space that confines the plasma 201 formed in the process region 210 to a region above the substrate 105, thereby preventing leakage of the plasma in the process region 210.
According to another aspect of the present invention, there is provided a semiconductor apparatus including the above reaction chamber, which may deposit a metal or a semiconductor material by Physical Vapor Deposition (PVD), such as aluminum, copper, tantalum nitride, tantalum carbide, tungsten nitride, lanthanum oxide, titanium, and the like.
In summary, in the reaction chamber and the semiconductor device of the embodiment of the invention, the grounding ring made of the highly conductive material is used for providing a grounding path from the outer deposition ring to the grounding plate, so that the outer deposition ring is at zero potential in the film coating process, the ignition phenomenon caused by the discharge of the outer deposition ring when the heating plate made of the stainless steel material is used is effectively solved, the film coating effect can be improved, and the process cost can be reduced.
In the preferred embodiment, the grounding ring is connected with the lining to provide a grounding path from the lining to the grounding plate, so that the phenomenon of sparking caused by the discharge of the lining in the coating process is avoided, and the coating effect can be further improved.
In a preferred embodiment, the inner deposition ring is made of a high-temperature-resistant insulating material, and the inner deposition ring realizes electrical isolation between the grounding ring and the heating plate, so that the influence of bias voltage on the heating plate on the grounding ring can be shielded.
In a preferred embodiment, isolation between the heating plate and the ground plate is achieved using an insulating isolation plate, which shields the influence of the bias on the heating plate on the ground plate.
In the preferred embodiment, the grounding ring is connected with the grounding disc through the beryllium copper reed, so that the grounding of the grounding ring can be realized, the radio frequency can be shielded, and the process stability in the reaction cavity is improved.
In the preferred embodiment, the compression amount of the elastic structure is 1-50mm, so that the ascending adjusting space of the base assembly is increased, and the adjusting range of the distance between the target and the substrate in the coating process is enlarged.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (14)
1. A reaction chamber, comprising:
a chamber body;
the base assembly is arranged in the chamber main body and comprises a metal heating plate and a grounding plate for grounding, and the metal heating plate is provided with a bearing surface for bearing a substrate;
a processing assembly comprising an outer deposition ring surrounding the load-bearing surface, the processing assembly for cooperating with the susceptor assembly to form a process zone,
wherein the reaction chamber further comprises a grounding ring coupled between the outer deposition ring and the grounding plate to provide a grounding path for the outer deposition ring to the grounding plate when the processing assembly and the susceptor assembly cooperate to form the process zone.
2. The reaction chamber of claim 1, wherein the processing assembly further comprises a liner surrounding the process region,
wherein the grounding ring is configured to provide a grounding path for the liner to the grounding plate when the processing assembly and the susceptor assembly cooperate to form the process zone.
3. The reaction chamber of claim 2, further comprising contacts for providing electrical contact between the ground ring and the ground plate.
4. The reaction chamber of claim 3, further comprising a resilient structure for providing electrical contact between the ground ring and the liner.
5. The reaction chamber of claim 4, wherein the ground ring comprises:
a ring structure surrounding the base assembly;
a first extension extending radially inward from one end of the annular structure, the first extension comprising a first surface for contacting the outer deposition ring; and
a second extension extending radially outward from another end of the ring structure, the second extension including a second surface for contacting the contact and a third surface for securing the resilient structure.
6. The reaction chamber of claim 5 wherein the resilient structure is secured to the third surface by a securing plate and a plurality of fasteners.
7. The reaction chamber of claim 1, wherein the processing assembly further comprises an inner deposition ring surrounding the metallic heating disk to provide electrical isolation between the metallic heating disk and the ground ring.
8. The reaction chamber of claim 7, wherein the inner deposition ring is made of an insulating material.
9. The reaction chamber of claim 1, wherein the base assembly further comprises a spacer disk positioned between the ground disk and the metallic heating disk for providing electrical isolation between the metallic heating disk and the ground disk.
10. The reaction chamber of claim 9, wherein the isolation disk comprises a ceramic disk.
11. The reaction chamber of claim 3 wherein the contact comprises a beryllium copper reed.
12. The reaction chamber of claim 4 wherein the resilient structure comprises a bent copper sheet that is resiliently deformable under compression by the grounding ring and the liner.
13. The reaction chamber as claimed in claim 4 wherein the resilient structure is compressed by an amount of 1-50 mm.
14. A semiconductor device, comprising: the reaction chamber of any one of claims 1-13.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112017933B (en) * | 2019-05-31 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
| CN112185786B (en) * | 2019-07-03 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and ground ring assembly for the same |
| CN110923644B (en) * | 2020-02-12 | 2020-06-19 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for reactive sputtering |
| CN114959620A (en) * | 2021-02-26 | 2022-08-30 | 鑫天虹(厦门)科技有限公司 | Thin film deposition equipment and wafer bearing disc thereof |
| CN115074679A (en) * | 2021-03-11 | 2022-09-20 | 台湾积体电路制造股份有限公司 | Method for forming semiconductor structure and physical vapor deposition device and method |
| CN113308681B (en) * | 2021-05-21 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Bearing device in semiconductor process equipment and semiconductor process equipment |
| CN114023620B (en) * | 2021-10-29 | 2023-07-14 | 德鸿半导体设备(浙江)有限公司 | Processing station for processing substrates |
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