CN109524304A - The processing method and silicon carbide power device of carbonization silicon oxide gate dielectric fluoro plasma - Google Patents
The processing method and silicon carbide power device of carbonization silicon oxide gate dielectric fluoro plasma Download PDFInfo
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- CN109524304A CN109524304A CN201811392399.7A CN201811392399A CN109524304A CN 109524304 A CN109524304 A CN 109524304A CN 201811392399 A CN201811392399 A CN 201811392399A CN 109524304 A CN109524304 A CN 109524304A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 51
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 125000001153 fluoro group Chemical group F* 0.000 title claims abstract description 28
- 238000003672 processing method Methods 0.000 title claims abstract description 28
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 26
- 238000003763 carbonization Methods 0.000 title claims abstract description 25
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 50
- 230000003647 oxidation Effects 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000012545 processing Methods 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 230000001590 oxidative effect Effects 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052731 fluorine Inorganic materials 0.000 abstract description 11
- 239000011737 fluorine Substances 0.000 abstract description 11
- 238000000137 annealing Methods 0.000 abstract description 7
- 238000003851 corona treatment Methods 0.000 abstract description 6
- 239000002341 toxic gas Substances 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention provides the processing methods and silicon carbide power device of a kind of silicon oxide gate dielectric fluoro plasma that is carbonized, include the following steps, clean to disk；Electron cyclotron resonace-fluoro plasma processing is carried out to cleaned disk surfaces；Oxidation furnace is put into be aoxidized.The processing method of carbonization silicon oxide gate dielectric fluoro plasma provided by the invention, fluorine-containing corona treatment is carried out before silicon carbide carries out dry-oxygen oxidation, treated, and Oxidation of SiC can be achieved in silicon carbide in low-temperature oxidation equipment, on the one hand it avoids using the toxic gas in conventional anneal process, on the other hand it avoids using specific high-temperature oxydation annealing device, while guaranteeing gate medium reliability, technique and equipment cost are reduced, the heat budget of technique is also reduced.
Description
Technical field
The invention belongs to technical field of semiconductor device, more specifically, be related to a kind of carbonization silicon oxide gate dielectric fluorine etc. from
The processing method and silicon carbide power device of daughter.
Background technique
With silicon carbide (SiC) be representative third generation semiconductor material have forbidden bandwidth is big, critical field strength is high, thermal conductivity
High superior function is to prepare one of high pressure, high-power, the ideal material of Flouride-resistani acid phesphatase device.It can be directly raw by thermal oxide
Long SiO2The advantage of medium accelerates the development of SiC MOSFET element, and (MOSFET is Metal-Oxide-Semiconductor
The abbreviation of Field-Effect Transistor, Metal-Oxide Semiconductor field effect transistor, abbreviation OH are brilliant
Body pipe), but the simple SiO obtained using dry-oxygen oxidation2The interface quality of gate medium is very poor, SiC/SiO2High interface state density is led
The problems such as device channel carrier mobility is low, electric leakage of the grid is big, device reliability is poor is caused, SiC MOSFET element is constrained
Development.How to prepare the SiC gate medium of high quality is current one of research hotspot.
In order to improve SiC/SiO2Interface quality reduces interface state density, improves the reliability of gate medium, mainly grind at present
Study carefully and concentrate on annealing process, including NO or N2O gas annealing, POCl3Gas annealing, Cl2Annealing etc..Wherein nitrogen or phosphorus can be with
SiC/SiO2The dangling bonds or carbon clusters at interface combine, to be passivated SiC/SiO2Interface interfacial state.Conventional anneal process uses
Gas be mostly toxic gas, and need carried out in specific oxidation furnace, oxidizing temperature is up to 1300 DEG C or more, increases
Technique preparation cost and difficulty.
Summary of the invention
The purpose of the present invention is to provide a kind of processing methods of silicon oxide gate dielectric fluoro plasma that is carbonized, and can be avoided toxic
The problems such as gas and high-temperature technology.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of carbonization silicon oxide gate dielectric fluoro plasma is provided
Processing method, comprising the following steps:
Disk is cleaned；
Electron cyclotron resonace-fluoro plasma processing is carried out to cleaned disk surfaces；
It is put into oxidation furnace to be aoxidized, oxidizing temperature is no more than 1200 DEG C.
It is further, described that electron cyclotron resonace-fluoro plasma processing is carried out to cleaned disk surfaces, comprising:
The processing time be 8min-10min, fluoro-gas flow be 50ml/min-70ml/min, treatment temperature be 400 DEG C-
600 DEG C, chamber vacuum degree is 10-4Pa, microwave power 500W-700W.
Further, the processing time is 9min-10min, and fluoro-gas flow is 55ml/min-65ml/min, place
Managing temperature is 450 DEG C -550 DEG C, and chamber vacuum degree is 10-4Pa, microwave power 550W-650W.
Further, the processing time is 9min, and fluoro-gas flow is 60ml/min, and treatment temperature is 500 DEG C, chamber
Body vacuum degree is 10-4Pa, microwave power 600W.
Further, the oxidation furnace that is put into is aoxidized, comprising:
Oxidizing temperature is no more than 1200 DEG C, oxidization time 100min-150min.
Further, the oxidizing temperature is no more than 1100 DEG C, oxidization time 110min-130min.
Further, the oxidizing temperature is 1000 DEG C, oxidization time 120min.
Further, the disk includes silicon carbide N from bottom to top+Substrate and silicon carbide N-Epitaxial layer.
Further, described that disk is cleaned, it is cleaned using RCA ablution, the RCA ablution mainly wraps
It includes:
First acidic oxidation is carried out with the acid hydrogen peroxide of sulfur acid to clean；
Alkaline oxygenated cleaning is carried out with amine-containing alkalescent hydrogen peroxide again；
Then it is cleaned with dilute hydrofluoric acid solution；
Finally acidic oxidation is carried out with hydrochloric acid hydrogen peroxide to clean；
It will be rinsed with ultrapure water among each cleaning, be finally dried again with low boiling point organic solvent.
The beneficial effect of the processing method of carbonization silicon oxide gate dielectric fluoro plasma provided by the invention is: with the prior art
It compares, the processing method of present invention carbonization silicon oxide gate dielectric fluoro plasma carries out fluorine-containing etc. before silicon carbide carries out dry-oxygen oxidation
Gas ions processing, treated, and Oxidation of SiC can be achieved in silicon carbide in low-temperature oxidation equipment, effectively prevents toxic gas
And high-temperature technology, since there is no pyroprocess, SiC/SiO2Surface dielectric pattern is preferable, and grid leakage current is lower, drops significantly
Low process costs, promote the reliability of gate medium.
Another object of the present invention is to provide a kind of silicon carbide power device, including silicon carbide N+Substrate, silicon carbide N-Extension
Layer and silicon dioxide layer.The device is adopted to be prepared with the aforedescribed process, has preferable pattern, grid leakage current is lower, gate medium
Reliable operation.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the structural schematic diagram of disk used in processing method provided in an embodiment of the present invention；
Fig. 2 is containing fluoro plasma to silicon carbide wafers surface treatment process schematic diagram；
Fig. 3 is that Oxidation of SiC grows SiO2Medium process schematic.
Wherein, in figure:
1- silicon carbide N+Substrate；2- silicon carbide N-Epitaxial layer；3- silicon dioxide layer.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
Also referring to Fig. 1 to Fig. 3, now to the processing method processed of carbonization silicon oxide gate dielectric fluoro plasma provided by the invention
It is illustrated.The processing method of the carbonization silicon oxide gate dielectric fluoro plasma, comprising the following steps:
Step 1: disk is cleaned；
Step 2: electron cyclotron resonace-fluoro plasma processing namely electron cyclotron are carried out to cleaned disk surfaces
Resonance-plasma enhances metal-organic chemical vapor deposition equipment (ECR-PEMOCVD), referring to fig. 2；
Step 3: being put into oxidation furnace and aoxidized, oxidizing temperature is no more than 1200 DEG C, forms silicon dioxide layer 3 as protection
Layer, referring to Fig. 3.
The processing method of carbonization silicon oxide gate dielectric fluoro plasma provided by the invention uses one compared with prior art
The fluorine-containing plasma treatment technique of kind carries out fluorine-containing corona treatment before SiC carries out dry-oxygen oxidation, and treated, and SiC exists
SiC oxidation can be achieved in common oxidation furnaces, oxidizing temperature is no more than 1200 DEG C, effectively prevents toxic gas and high temperature work
Skill, since there is no pyroprocess, SiC/SiO2Surface dielectric pattern is preferable, and grid leakage current is lower, and promote gate medium can
By property.
As it can be seen that proposed by the present invention is a kind of processing method of low temperature SiC gate medium, dry-oxygen oxidation advance is carried out in SiC
The fluorine-containing corona treatment of row, treated, and SiC oxidation can be achieved in SiC in low-temperature oxidation equipment, on the one hand purpose is
It avoids on the other hand avoiding using specific high-temperature oxydation annealing device, protecting using the toxic gas in conventional anneal process
Demonstrate,prove the reliability of gate medium.It is mainly used for production, the SiC MOSFET device of the SiC MOSFET element gate medium of microelectronic field
The preparation of part and the preparation of similar type device.
The present invention has the advantages that substitute the annealing process of toxic gas by fluorine-containing corona treatment, fluorine can be with
With SiC/SiO2The interfacial state at interface combines, and achievees the effect that reduce interface state density.In addition, fluoro-gas treated SiC
Surface can complete to aoxidize in regular oxidation furnace, avoid high-temperature oxidation process, greatly reduce production cost.
Referring to Fig. 2, one kind of the processing method as carbonization silicon oxide gate dielectric fluoro plasma provided by the invention is specific
Embodiment, it is described that electron cyclotron resonace-fluoro plasma processing is carried out to cleaned disk surfaces, comprising: the processing time
For 8min-10min, fluoro-gas flow is 50ml/min-70ml/min, and treatment temperature is 400 DEG C -600 DEG C, chamber vacuum degree
It is 10-4Pa, microwave power 500W-700W.
Optionally, the processing time is 9min-10min, and fluoro-gas flow is 55ml/min-65ml/min, processing
Temperature is 450 DEG C -550 DEG C, and chamber vacuum degree is 10-4Pa, microwave power 550W-650W.
Optionally, the processing time is 9min, and fluoro-gas flow is 60ml/min, and treatment temperature is 500 DEG C, cavity
Vacuum degree is 10-4Pa, microwave power 600W.
Referring to Fig. 3, one kind of the processing method as carbonization silicon oxide gate dielectric fluoro plasma provided by the invention is specific
Embodiment is put into oxidation furnace and carries out oxidation process, and oxidizing temperature is no more than 1200 DEG C, oxidization time 100min-150min.
Optionally, the oxidizing temperature is no more than 1100 DEG C, oxidization time 110min-130min.
Optionally, the oxidizing temperature is 1000 DEG C, oxidization time 120min.
Refering to fig. 1, a kind of specific reality as the processing method of carbonization silicon oxide gate dielectric fluoro plasma provided by the invention
Mode is applied, disk includes silicon carbide N from bottom to top+Substrate 1 and silicon carbide N-Epitaxial layer 2.
Referring to Fig. 1, a kind of specific reality of the processing method as carbonization silicon oxide gate dielectric fluoro plasma provided by the invention
Mode is applied, disk is cleaned using RCA ablution, RCA ablution specifically includes that
First acidic oxidation is carried out with the acid hydrogen peroxide of sulfur acid to clean；
Alkaline oxygenated cleaning is carried out with amine-containing alkalescent hydrogen peroxide again；
Then it is cleaned with dilute hydrofluoric acid solution；
Finally acidic oxidation is carried out with hydrochloric acid hydrogen peroxide to clean；
It will be rinsed with ultrapure water among each cleaning, be finally dried again with low boiling point organic solvent.
The present invention is cleaned in the RCA of the enterprising rower standard of silicon carbide epitaxy material, is carried out later in SiC epitaxial material surface
Fluorine-containing corona treatment is put into progress oxidation growth SiO in oxidation furnace after processed2Medium.
A kind of specific embodiment of the processing method of carbonization silicon oxide gate dielectric fluoro plasma provided by the invention, including with
Lower step:
Step 1: the RCA that disk carries out standard being cleaned, attached drawing 1 is carbofrax material structural schematic diagram, wherein 1 is carbonization
Silicon N+Substrate, 2 be silicon carbide N-Epitaxial material.
Step 2: the disk cleaned being put into ECR fluoro plasma surface treatment 8min-10min, wherein fluorine-containing gas
Body flow is 60ml/min, and treatment temperature is 500 DEG C, and chamber vacuum degree is 10-4Pa, microwave power 600W.Attached drawing 2 is carbonization
Silicon materials fluoro plasma treated structural schematic diagram.
Step 3: the disk after fluorine-containing corona treatment being put into oxidation furnace and carries out oxidation processes, oxidizing temperature does not surpass
1200 DEG C, oxidization time 120min are crossed, attached drawing 3 is the structural schematic diagram after carbofrax material oxidation, wherein 3 be oxidation growth
SiO2Medium.
Wherein, it is the standard cleaning method of semicon industry silicon wafer that silicon wafer cleaning process, which uses RCA method, no longer superfluous herein
It states.
Referring to Fig. 3, it is to provide a kind of silicon carbide power device the present invention also provides one kind, which uses above-mentioned side
Method preparation, including silicon carbide N+Substrate 1, silicon carbide N-Epitaxial layer 2 and silicon dioxide layer 3 have preferable pattern, electric leakage of the grid
Flow lower, the reliable operation of gate medium.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. the processing method for the silicon oxide gate dielectric fluoro plasma that is carbonized, which comprises the following steps:
Disk is cleaned；
Electron cyclotron resonace-fluoro plasma processing is carried out to cleaned disk surfaces；
It is put into oxidation furnace to be aoxidized, oxidizing temperature is no more than 1200 DEG C.
2. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as described in claim 1, which is characterized in that described pair through clear
The disk surfaces washed carry out electron cyclotron resonace-fluoro plasma processing, comprising:
The processing time is 8min-10min, and fluoro-gas flow is 50ml/min-70ml/min, and treatment temperature is 400 DEG C -600
DEG C, chamber vacuum degree is 10-4Pa, microwave power 500W-700W.
3. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as claimed in claim 2, which is characterized in that when the processing
Between be 9min-10min, fluoro-gas flow be 55ml/min-65ml/min, treatment temperature be 450 DEG C -550 DEG C, chamber vacuum
Degree is 10-4Pa, microwave power 550W-650W.
4. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as claimed in claim 3, which is characterized in that when the processing
Between be 9min, fluoro-gas flow be 60ml/min, treatment temperature be 500 DEG C, chamber vacuum degree be 10-4Pa, microwave power are
600W。
5. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as described in claim 1, which is characterized in that described to be put into oxygen
Change furnace to be aoxidized, comprising:
Oxidizing temperature is no more than 1200 DEG C, oxidization time 100min-150min.
6. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as claimed in claim 5, which is characterized in that the oxidation temperature
Degree is no more than 1100 DEG C, oxidization time 110min-130min.
7. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as claimed in claim 6, which is characterized in that the oxidation temperature
Degree is 1000 DEG C, oxidization time 120min.
8. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as described in claim 1, which is characterized in that the disk is certainly
Under it is supreme include silicon carbide N+Substrate and silicon carbide N-Epitaxial layer.
9. the processing method of carbonization silicon oxide gate dielectric fluoro plasma as described in claim 1, which is characterized in that described to disk
It is cleaned, is cleaned using RCA ablution, the RCA ablution specifically includes that
First acidic oxidation is carried out with the acid hydrogen peroxide of sulfur acid to clean；
Alkaline oxygenated cleaning is carried out with amine-containing alkalescent hydrogen peroxide again；
Then it is cleaned with dilute hydrofluoric acid solution；
Finally acidic oxidation is carried out with hydrochloric acid hydrogen peroxide to clean；
It will be rinsed with ultrapure water among each cleaning, be finally dried again with low boiling point organic solvent.
10. silicon carbide power device, which is characterized in that using such as the described in any item method preparations of claim 1-9, including carbon
SiClx N+Substrate, silicon carbide N-Epitaxial layer and silicon dioxide layer.
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| CN112820639A (en) * | 2021-01-02 | 2021-05-18 | 大连理工大学 | Improved preparation process of silicon carbide MOSFET device |
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| CN112820639A (en) * | 2021-01-02 | 2021-05-18 | 大连理工大学 | Improved preparation process of silicon carbide MOSFET device |
| CN112820639B (en) * | 2021-01-02 | 2024-05-31 | 大连理工大学 | Improved silicon carbide MOSFET device preparation process |
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