CN108987283A - A kind of gallium tin oxide semiconductor thin film transistor (TFT) and its preparation method and application - Google Patents
A kind of gallium tin oxide semiconductor thin film transistor (TFT) and its preparation method and application Download PDFInfo
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- CN108987283A CN108987283A CN201810654056.7A CN201810654056A CN108987283A CN 108987283 A CN108987283 A CN 108987283A CN 201810654056 A CN201810654056 A CN 201810654056A CN 108987283 A CN108987283 A CN 108987283A
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- oxide semiconductor
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- thin film
- tin oxide
- film transistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 239000010409 thin film Substances 0.000 title claims abstract description 55
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910001887 tin oxide Inorganic materials 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- 239000010408 film Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000006193 liquid solution Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052725 zinc Inorganic materials 0.000 abstract description 4
- 239000011701 zinc Substances 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 2
- 238000009938 salting Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 25
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 24
- 238000004528 spin coating Methods 0.000 description 20
- 239000000243 solution Substances 0.000 description 19
- 229910044991 metal oxide Inorganic materials 0.000 description 11
- 150000004706 metal oxides Chemical class 0.000 description 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 8
- ABFQGXBZQWZNKI-UHFFFAOYSA-N 1,1-dimethoxyethanol Chemical compound COC(C)(O)OC ABFQGXBZQWZNKI-UHFFFAOYSA-N 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000013019 agitation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229940044658 gallium nitrate Drugs 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000012702 metal oxide precursor Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- YJBKVPRVZAQTPY-UHFFFAOYSA-J tetrachlorostannane;dihydrate Chemical compound O.O.Cl[Sn](Cl)(Cl)Cl YJBKVPRVZAQTPY-UHFFFAOYSA-J 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910013504 M-O-M Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- KKKAMDZVMJEEHQ-UHFFFAOYSA-N [Sn].[N+](=O)(O)[O-] Chemical compound [Sn].[N+](=O)(O)[O-] KKKAMDZVMJEEHQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical compound ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 description 1
- 125000001891 dimethoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- ATYZRBBOXUWECY-UHFFFAOYSA-N zirconium;hydrate Chemical compound O.[Zr] ATYZRBBOXUWECY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to a kind of gallium tin oxide semiconductor thin film transistor (TFT)s and its preparation method and application, including prepare grid, gate insulation layer, active layer and source-drain electrode on substrate, and the active layer is gallium tin oxide semiconductor film.Gallium tin oxide semiconductor thin film transistor (TFT) of the invention has abandoned the rare metals such as common zinc, indium in current mainstream oxide semiconductor, prepares high-performance, low cost, stable oxide semiconductor thin-film transistor only with gallium tin metal salting liquid.Gallium tin oxide semiconductor thin film transistor (TFT) electron mobility with higher provided by the invention, electron mobility is up to 8cm2/ (Vs) or more；And carrier mobility can be adjusted by adjusting the content of Ga element and Sn element, and change threshold voltage in the range of -20V to 20V.
Description
Technical field
The present invention relates to field of transistors, and in particular, to a kind of gallium tin oxide semiconductor thin film transistor (TFT) and its system
Preparation Method and application.
Background technique
Currently, flat panel display development is very rapid.Driving of the thin film transistor (TFT) as flat-panel monitor active matrix,
Have many advantages, such as at low cost, performance is high, is widely used in field of display technology.In thin-film transistor technologies, metal oxide
Thin film transistor (TFT) has attracted the concern of lot of domestic and foreign panel manufacturers, be widely studied in recent years one kind it is novel
Thin-film transistor technologies.
Compared with traditional amorphous silicon film transistor, metal oxide thin-film transistor have carrier mobility it is high,
The performance advantages such as subthreshold swing is good, are more suitable for applying in high-resolution, large scale display panel.Meanwhile traditional film
Transistor is prepared using vacuum technology, including rf magnetron sputtering, plasma reinforced chemical vapour deposition, vacuum evaporation
Contour vacuum deposition mode.Although the thin film transistor (TFT) of vacuum preparation has preferable electric property and stability, it is high at
This vacuum equipment and running maintenance cost and size, has become a bottleneck for limiting its large-scale application.Phase
Instead, metal oxide thin-film transistor is with vacuum technology other than it can be prepared, there are also another big advantage be can
It is made with solwution method technique.
Different from silicon-based film transistor, metal oxide thin-film transistor can utilize sol-gel method, will be some
Metal salt solution reacts under particular surroundings atmosphere, ultimately generates metal oxide semiconductor films.Currently, solution legal system
The active layer material used in standby metal oxide thin-film transistor mainly have indium gallium zinc (IGZO), zinc oxide (ZnO),
Indium oxide (In2O3), zinc-tin oxide (ZTO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) etc..These materials are substantially
Using zinc oxide or indium oxide as matrix, still, since the application cost of indium, zinc is higher.Therefore, it is necessary to research and develop a kind of high
The semiconductor thin-film transistor of performance, low cost.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of gallium tin oxide semiconductor thin film transistor (TFT)s
Preparation method.
The gallium tin oxide semiconductor film being prepared another object of the present invention is to provide above-mentioned preparation method is brilliant
Body pipe.
It is active in display panel that another object of the present invention is to provide above-mentioned gallium tin oxide semiconductor thin film transistor (TFT)s
Application in matrix driving, logic circuit or photodetection.
To achieve the above object, the present invention adopts the following technical scheme:
A kind of preparation method of gallium tin oxide semiconductor thin film transistor (TFT), including prepare grid on substrate, gate insulation layer, have
Active layer and source-drain electrode, the active layer are gallium tin oxide semiconductor film；The preparation of the gallium tin oxide semiconductor film
Method is as follows:
S1: it by gallium metal salt and tin metal salt mixed dissolution in solvent, is heated under stirring condition, before then room temperature curing obtains
It is spare to drive liquid solution；
S2: precursor solution described in S1 is deposited on hydrophilic pretreated substrate and obtains semiconductive thin film, to semiconductive thin film
Make annealing treatment up to the gallium tin oxide semiconductor film；
Wherein, in S1, the molar ratio of the gallium element and tin element is 0.5~1.5:1, metallic element in the precursor solution
Concentration be 0.05~0.5mol/L；
In S2, the annealing includes two steps:
S21: the semiconductive thin film that deposition is obtained preheats 10~20min in atmosphere, and heating temperature is 60~250
℃；
S22: by S21, treated that semiconductive thin film heats 100~150min under the conditions of 300~600 DEG C.
In the present invention, the main purpose for making annealing treatment the first step is to toast the solvent on surface, forms oxide semiconductor
Film；The purpose of second step is mainly dry out solvent, and sufficiently reacts under high temperature, makes oxide semiconductor bonding.
Preferably, in S1, the molar ratio of the gallium element and tin element is 0.7 ~ 1.2:1, gold in the precursor solution
The concentration for belonging to element is 0.1 ~ 0.15mol/L.
Preferably, in S21, heating temperature is 150 ~ 180 DEG C, and heating time is 10 ~ 15 min.
Preferably, in S22, heating temperature is 350 ~ 450 DEG C, and heating time is 120 ~ 150 min.
Preferably, in S1, the temperature of the heating is 60~80 DEG C, and the time of stirring is 2~5h；The time of the curing
For 12h or more.
Preferably, in S2, the hydrophilic pretreatment is with oxygen gas plasma cleaning treatment, UV ozone processing or dense sulphur
Acid soak processing.It is further preferable that the hydrophilic pretreated water contact angle of substrate is less than 20 degree.
Preferably, the preparation method further includes preparing passivation layer on substrate；The preparation method of the passivation layer be etc.
Plasma enhanced chemical vapor deposition or atomic layer deposition method.It is further preferable that the material of the passivation layer includes but is not limited to
One of silica, silicon nitride, aluminium oxide or hafnium oxide are a variety of.
Preferably, the gallium tin oxide semiconductor thin film transistor (TFT) is that bottom gate top, bottom gate bottom, top-gated top or top-gated bottom connect
Touch structure.
Preferably, in S2, the method for the deposition is spin coating, drop coating, blade coating, dip coated or inkjet printing.It is more excellent
The method of selection of land, the deposition is spin-coating method, and the spin-coating method, which refers to, uniformly drips precursor solution after substrate, and spin coater is first low
Speed rotates 5~10s with the speed of 500~1000rpm, then high speed rotates 30~60s with the speed of 3000~5000rpm, obtains
Semiconductive thin film.
Preferably, in S1, the gallium metal salt is one or more of gallium nitrate, gallium chloride or acetic acid gallium；The tin
Metal salt is one or more of nitric acid tin, nitric acid stannous, stannic chloride or stannous chloride；The solvent is dimethoxy second
One or more of alcohol, ethylene glycol, acetylacetone,2,4-pentanedione, ammonium hydroxide, hydrogen peroxide or water.
In the present invention, the annealing refer to containing one of oxygen, nitrogen, ozone, laughing gas or air or
It anneals under a variety of environment.
Preferably, in S21, the atmosphere is the gaseous environment containing oxygen, oxygen element, ozone or oxonium ion.
Preferably, the substrate be rigid substrate or flexible substrate, rigid substrate include but is not limited to glass, silicon wafer,
Mica etc.；Flexible substrate includes but is not limited to high molecular polymer, metal foil etc..
Preferably, the grid and source-drain electrode material are that aluminium, molybdenum, chromium, platinum, gold, silver, copper, indium tin oxide or nanometer are led
One of electric material is a variety of；Preparation method includes vapor deposition, sputtering, silk-screen printing or inkjet printing, and thickness range exists
40~300nm.
Preferably, the gate insulation layer includes but is not limited to: silica, silicon nitride, aluminium oxide, hafnium oxide, zirconium oxide
Or one of yttrium oxide or a variety of；Preparation method is that plasma reinforced chemical vapour deposition, atomic layer deposition or colloidal sol are solidifying
Glue method.
The gallium tin oxide semiconductor thin film transistor (TFT) that the present invention protects above-mentioned preparation method to be prepared simultaneously.
Above-mentioned gallium tin oxide semiconductor thin film transistor (TFT) is visited in display panel active matrix drive, logic circuit or photoelectricity
Application in survey is also within protection scope of the present invention.
Compared with prior art, the invention has the following beneficial effects:
Gallium tin oxide semiconductor thin film transistor (TFT) of the invention, abandoned common zinc in current mainstream oxide semiconductor,
It is brilliant to prepare high-performance, low cost, stable oxide semiconductor thin-film only with gallium tin metal salting liquid for the rare metals such as indium
Body pipe.Gallium tin oxide semiconductor thin film transistor (TFT) electron mobility with higher provided by the invention, electron mobility can
Up to 8cm2/ (Vs) or more；And carrier mobility can be adjusted by adjusting the content of Ga element and Sn element, and made
Threshold voltage changes in the range of -20V to 20V.
Detailed description of the invention
Fig. 1 is the schematic diagram of grid and insulating layer used in the embodiment of the present invention 1；
Fig. 2 is gallium tin oxide semiconductor film schematic diagram prepared by the embodiment of the present invention 1；
Fig. 3 is graphical gallium tin oxide semiconductor film schematic diagram prepared by the embodiment of the present invention 1；
Fig. 4 is the signal of gallium tin oxide semiconductor thin film transistor (TFT) (bottom gate top contact structure) prepared by the embodiment of the present invention 1
Figure；
Fig. 5 is that gallium tin oxide semiconductor thin film transistor (TFT) prepared by the embodiment of the present invention 1 applies passivation layer schematic diagram；
Fig. 6 is the process flow chart for the gallium tin oxide semiconductor thin film transistor (TFT) that the embodiment of the present invention 1 prepares bottom grating structure；
Fig. 7 is gallium tin oxide film transistor (bottom gate bottom contact structures) schematic diagram prepared by the embodiment of the present invention 1；
Fig. 8 is gallium tin oxide film transistor (top-gated top contact structure) schematic diagram prepared by the embodiment of the present invention 1；
Fig. 9 is gallium tin oxide film transistor (top-gated bottom contact structures) schematic diagram prepared by the embodiment of the present invention 1.
Specific embodiment
Further illustrate the present invention below in conjunction with specific embodiments and the drawings, but embodiment the present invention is not done it is any
The restriction of form.Unless stated otherwise, the present invention uses reagent, method and apparatus is the art conventional reagents, method
And equipment.
Unless stated otherwise, agents useful for same and material of the present invention are commercially available.
The preparation of 1 gallium tin oxide semiconductor thin film transistor (TFT) of embodiment
The preparation method process flow chart of gallium tin oxide semiconductor thin film transistor (TFT) provided in this embodiment, should be partly referring to Fig. 6
Conductor thin film transistor is bottom gate top contact structure.The preparation method of the gallium tin oxide semiconductor thin film transistor (TFT) is specifically such as
Under:
(1) as shown in Figure 1, the substrate chosen in the present embodiment is that surface has SiO2N-shaped heavy doping Si substrate, wherein N-shaped weight
Si substrate is adulterated as grid 1, the SiO of surface thermal oxide2As gate insulation layer 2.Successively use acetone, ethyl alcohol, deionization pure water
Substrate 20min is cleaned, for removing substrate surface organic remains and impurity particle；After drying up substrate using nitrogen gun, it is put into
Plasma equipment plasma or UV ozone cleaning treatment substrate surface 5min, for the hydrophilic treated of substrate surface, side
Continue film after an action of the bowels.
(2) preparation of gallium tin oxide semiconductor film, mainly there is following steps:
A) prepared by precursor solution
56.3mg gallium nitrate hydrate and 58.7mg tin chloride dihydrate are dissolved in 4mL dimethoxy-ethanol, and 49uL is added
Acetylacetone,2,4-pentanedione is made into 0.12 M(mol/L as stabilizer) metal oxide precursor solution, wherein Ga/Sn=0.85；And it will
Precursor solution is placed in heating magnetic agitation 2 hours of 60 DEG C of hot plate, is finally placed in and cures 12 hours at room temperature, to guarantee presoma
Between sufficiently constitute corresponding complex compound.
B) gallium tin oxide semiconductor film 3 is prepared using spin-coating method
Prepared precursor solution is dripped by the syringe with 0.22 um filter tip in the substrate surface to spin coating, and is opened
Beginning spin coating, spin coating proceeding are 4000rpm spin coating 30s, and being formed by film 3 is about 20nm；Sample after spin coating is quickly put into 180
DEG C hot plate on heat 10min, for evaporating solvent dimethoxy-ethanol and acetylacetone,2,4-pentanedione；It is put on 350 DEG C of hot plates later high
Temperature annealing 2h, so that fully reacting between solute, and metallic atom-oxygen atom-metallic atom (M-O-M) framework is formed, device shows
It is intended to as shown in Figure 2.
C) the graphical gallium tin oxide semiconductor film 3 of lithography and etching is utilized
The film spin coating positive photoresist that will be prepared, spin coating proceeding first with 500rpm spin coating 12s after, then with 2000rpm spin coating
40s, obtaining photoresist film thickness is 3 ~ 5um；It is placed in 120 DEG C of hot plate heating 2min again later, the purpose is to evaporate having in glue
Solvent ingredient makes the adhesive curing of sample surfaces；Then mask plate is covered, 21s is exposed and is developed, required pattern is obtained；
Using 36% concentrated hydrochloric acid as etching liquid, and 10min is etched under the conditions of 70 DEG C, removes photoresist to obtain graphical gallium tin-oxide later
Film 3, schematic diagram is as shown in Figure 3.
(3) as shown in figure 4, using the method preparation one of vapor deposition on graphical good gallium tin oxide semiconductor film 3
Layer metal 4 is used as source-drain electrode, in the present embodiment, covers metal mask plate in graphical film surface, and one layer of aluminium electricity is deposited
Pole, thickness is in 40nm~100nm.
(4) passivation layer 5 is prepared on metal 4, as shown in Figure 5.In the present embodiment, by the way of PECVD, SiH is utilized4
And N2O reaction generates SiO2As passivation layer 5, thickness range is 100~500nm, and it is brilliant to complete gallium tin oxide semiconductor film
Body control is standby.
The preparation of 2 gallium tin oxide semiconductor thin film transistor (TFT) of embodiment
Metal oxide thin-film transistor manufactured in the present embodiment is bottom gate top contact structure, in production method and embodiment 1
Disclosed method is similar, and difference is as follows:
In step (1), highly doped n-type silicon wafer substrate is chosen as grid 1.Then it is thin zirconium oxide to be prepared using sol-gel method
Film is as gate insulation layer 2.Mainly include the following steps:
A) prepared by precursor solution
0.32g oxychloride zirconium hydrate is dissolved in 5mL dimethoxy-ethanol, 0.2 M(mol/L is made into) before metal oxide
Liquid solution is driven, and precursor solution is placed in magnetic agitation 3.5 hours in room temperature, is finally placed in that cure at least 12 at room temperature small
When, to guarantee sufficiently to be constituted corresponding complex compound between presoma.
B) zirconium oxide dielectric layer film is prepared using spin-coating method
Prepared precursor solution is dripped by the syringe with 0.45 um filter tip in the substrate surface to spin coating, and is opened
Beginning spin coating, spin coating proceeding are 4000rpm spin coating 30s, and the sample after spin coating is put to 15min is heated on 150 DEG C of hot plate, for steaming
Dimethoxy-ethanol solvent is sent out, spin coating 4 times is repeated and obtains sufficiently thick dielectric layer film, being formed by film 3 is about 90nm；It
After be put into 350 DEG C of hot plates or annealing furnace high temperature annealing 1-2h so that fully reacting between solute, and it is former to form metallic atom-oxygen
Son-metallic atom (M-O-M) framework.
In above-mentioned preparation method, zirconium oxide dielectric layer film obtained in the step b) further includes annealing, mainly
Include two-step pretreatment:
The first step, the zirconium oxide dielectric layer film that step b) is obtained preheat 5 ~ 30 minutes in air atmosphere, heating temperature
Spending range is 50 ~ 250 DEG C.Main purpose is to toast the solvent on surface, removes remaining organic solvent in film.
Second step is heated at high temperature 60 ~ 150 minutes, and heating temperature range is 300 ~ 500 DEG C.Mainly dry out solvent, and it is high
The lower sufficiently reaction of temperature, makes oxide semiconductor bonding.
Embodiment 3
Fig. 7 discloses the semiconductor thin-film transistor with bottom gate bottom contact structures, the transistor the preparation method is as follows:
The production method of the metal oxide thin-film transistor of the present embodiment is similar with method disclosed in embodiment 1, different
Place is as follows:
Step (2), the method on gate insulation layer 2 using vapor deposition prepare one layer of metal 4 and are used as source-drain electrode, in the present embodiment,
Metal mask plate is covered in gate insulation layer, and one layer of aluminium electrode is deposited, thickness is in 40nm~100nm.
Step (3), in the preparation of gallium tin oxide semiconductor film:
A) prepared by precursor solution
61.4mg gallium nitrate hydrate and 54.2mg tin chloride dihydrate are dissolved in 4mL dimethoxy-ethanol, and 50uL is added
Acetylacetone,2,4-pentanedione is made into 0.12 M(mol/L as stabilizer) metal oxide precursor solution, wherein Ga/Sn=1.0；And will before
It drives liquid solution and is placed in heating magnetic agitation 2 hours of 80 DEG C of hot plate, be finally placed in curing 18 hours at room temperature, to guarantee between presoma
Sufficiently constitute corresponding complex compound.
Embodiment 4
Fig. 8 discloses the semiconductor thin-film transistor with top-gated top contact structure, the transistor the preparation method is as follows:
The production method of the metal oxide thin-film transistor of the present embodiment is similar with method disclosed in embodiment 1, different
Place is as follows:
In step (1), N-shaped heavy doping Si piece is chosen as substrate 6.
In step (2), in the preparation of gallium tin oxide semiconductor film:
A) prepared by precursor solution
51.1mg gallium nitrate hydrate and 63.2mg tin chloride dihydrate are dissolved in 4mL dimethoxy-ethanol, and 50uL is added
Acetylacetone,2,4-pentanedione is made into 0.12 M(mol/L as stabilizer) metal oxide precursor solution, wherein Ga/Sn=0.71；And it will
Precursor solution is placed in heating magnetic agitation 1 hour of 60 DEG C of hot plate, is finally placed in and cures 12 hours at room temperature, to guarantee presoma
Between sufficiently constitute corresponding complex compound.
In step (3), one layer of metal is prepared using the method for vapor deposition on graphical good gallium tin oxide semiconductor film 3
4 are used as source-drain electrode.
In step (4), insulating layer 2 is prepared on metal 4, as shown in Figure 8.In the present embodiment, by the way of PECVD,
Utilize SiH4And N2O reaction generates SiO2As insulating layer 2, thickness range is 300~500nm.
Step (5), adopts vapor deposition method one layer of metal of preparation as grid 1 on insulating layer 2, in the present embodiment, institute
Evaporation metal is aluminium, and thickness range is 40 ~ 100nm.
Embodiment 5
Fig. 9 discloses the semiconductor thin-film transistor with top-gated bottom contact structures, the transistor the preparation method is as follows:
The production method of the metal oxide thin-film transistor of the present embodiment is similar with method disclosed in embodiment 3, different
Place is as follows:
In step (1), N-shaped heavy doping Si piece is chosen as substrate 6.
Step (3), in the preparation of gallium tin oxide semiconductor film:
B) gallium tin oxide semiconductor film 3 is prepared using knife coating
Prepared precursor solution is dripped by the syringe with 0.22 um filter tip in pretreated one side of substrate, is used in combination
Clean glass bar contacts solution, is at the uniform velocity scratched with the speed of 1cm per second, and being formed by film 3 is about 20nm；Sample after blade coating
Product are quickly put on 180 DEG C of hot plate and heat 10min, for evaporating solvent dimethoxy-ethanol and acetylacetone,2,4-pentanedione；It is put into later
High annealing 2h on 350 DEG C of hot plates, so that fully reacting between solute, and form metallic atom-oxygen atom-metallic atom (M-O-
M) framework.
In step (4), insulating layer 2 is prepared on metal 4, as shown in Figure 9.In the present embodiment, by the way of PECVD,
Utilize SiH4And N2O reaction generates SiO2As insulating layer 2, thickness range is 300~500nm.
Step (5), adopts vapor deposition method one layer of metal of preparation as grid 1 on insulating layer 2, in the present embodiment, institute
Evaporation metal is aluminium, and thickness range is 40 ~ 100nm.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of gallium tin oxide semiconductor thin film transistor (TFT), which is characterized in that including preparing grid on substrate
Pole, gate insulation layer, active layer and source-drain electrode, the active layer are gallium tin oxide semiconductor film；The gallium tin-oxide half
Conductor thin film the preparation method is as follows:
S1: it by gallium metal salt and tin metal salt mixed dissolution in solvent, is heated under stirring condition, before then room temperature curing obtains
It is spare to drive liquid solution；
S2: precursor solution described in S1 is deposited on hydrophilic pretreated substrate and obtains semiconductive thin film, to semiconductive thin film
Make annealing treatment up to the gallium tin oxide semiconductor film；
Wherein, in S1, the molar ratio of the gallium element and tin element is 0.5~1.5:1, metallic element in the precursor solution
Concentration be 0.05~0.5mol/L；
In S2, the annealing includes two steps:
S21: the semiconductive thin film that deposition is obtained preheats 10~20min in atmosphere, and heating temperature is 60~250
℃；
S22: by S21, treated that semiconductive thin film heats 100~150min under the conditions of 300~600 DEG C.
2. preparation method according to claim 1, which is characterized in that in S1, the molar ratio of the gallium element and tin element is
0.7 ~ 1.2:1, the concentration of metallic element is 0.1 ~ 0.15mol/L in the precursor solution.
3. preparation method according to claim 1, which is characterized in that in S21, heating temperature is 150 ~ 180 DEG C, when heating
Between be 10 ~ 15 min.
4. preparation method according to claim 1, which is characterized in that in S22, heating temperature is 350 ~ 450 DEG C, when heating
Between be 120 ~ 150 min.
5. preparation method according to claim 1, which is characterized in that in S1, the temperature of the heating is 60~80 DEG C, stirring
Time be 2~5h；The time of the curing is 12h or more.
6. preparation method according to claim 1, which is characterized in that in S2, the hydrophilic pretreatment is to use oxygen plasma
Body cleaning treatment, UV ozone processing or concentrated sulfuric acid immersion treatment.
7. preparation method according to claim 1, which is characterized in that the preparation method further includes preparing passivation on substrate
Layer.
8. preparation method according to claim 1, which is characterized in that the gallium tin oxide semiconductor thin film transistor (TFT) is bottom
Grid top, bottom gate bottom, top-gated top or top-gated bottom contact structures.
9. the gallium tin oxide semiconductor thin film transistor (TFT) that any preparation method of claim 1~8 is prepared.
10. gallium tin oxide semiconductor thin film transistor (TFT) is in display panel active matrix drive, logic circuit described in claim 9
Or the application in photodetection.
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