CN108598036B - Method for manufacturing diamond-based gallium nitride device - Google Patents
Method for manufacturing diamond-based gallium nitride device Download PDFInfo
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- CN108598036B CN108598036B CN201810667077.2A CN201810667077A CN108598036B CN 108598036 B CN108598036 B CN 108598036B CN 201810667077 A CN201810667077 A CN 201810667077A CN 108598036 B CN108598036 B CN 108598036B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 96
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 93
- 239000010432 diamond Substances 0.000 title claims abstract description 93
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 24
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- 238000010899 nucleation Methods 0.000 claims abstract description 23
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- 239000011521 glass Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 14
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- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
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- 239000010931 gold Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
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- 238000001312 dry etching Methods 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
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- 238000005452 bending Methods 0.000 description 1
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- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
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- 238000000992 sputter etching Methods 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Abstract
The invention relates to a manufacturing method of a diamond-based gallium nitride device, which comprises the following steps: growing a gallium nitride buffer layer on a substrate; adhering a temporary slide on the gallium nitride buffer layer; removing the substrate, and inverting the formed temporary slide-gallium nitride buffer layer structure; forming a dielectric layer on the inverted gallium nitride buffer layer; selectively growing a diamond nucleation layer on the dielectric layer according to a preset pattern; growing the diamond nucleation layer to form a patterned diamond layer; and removing the temporary slide glass, and inverting the structure of the formed gallium nitride buffer layer-dielectric layer-diamond layer. In summary, the method for manufacturing the diamond-based gallium nitride device provided by the application greatly reduces the stress between diamond and gallium nitride by forming the patterned diamond layer, thereby reducing the manufacturing difficulty of the large-wafer-size diamond-based gallium nitride device and facilitating the industrialization of the large-wafer-size diamond-based gallium nitride device.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a diamond-based gallium nitride device.
Background
As a representative of the third generation semiconductor materials, gallium nitride (gan) has many excellent characteristics, such as high critical breakdown electric field, high electron mobility, high two-dimensional electron gas concentration, and good high-temperature operation capability. Third generation semiconductor devices based on gallium nitride, such as High Electron Mobility Transistors (HEMTs), Heterojunction Field Effect Transistors (HFETs), etc., have been used, and have significant advantages especially in the fields of radio frequency, microwave, etc. where high power and high frequency are required.
In the manufacturing process of the existing diamond-based gallium nitride radio frequency device, due to the fact that lattice mismatch and thermal mismatch exist between diamond and gallium nitride, huge wafer bending can be formed along with the increase of the size of a wafer, and the difficulty of the subsequent process is increased.
Disclosure of Invention
In view of the above, it is necessary to provide a method for manufacturing a diamond-based gallium nitride device.
The invention provides a manufacturing method of a diamond-based gallium nitride device, which comprises the following steps:
growing a gallium nitride buffer layer on a substrate;
adhering a temporary slide on the gallium nitride buffer layer;
removing the substrate, and inverting the formed temporary slide-gallium nitride buffer layer structure;
forming a dielectric layer on the inverted gallium nitride buffer layer;
selectively growing a diamond nucleation layer on the dielectric layer according to a preset pattern;
growing the diamond nucleation layer to form a patterned diamond layer;
and removing the temporary slide glass, and inverting the structure of the formed gallium nitride buffer layer-dielectric layer-diamond layer.
In one embodiment, the step of forming the diamond nucleation layer comprises:
sequentially forming a mask layer on the dielectric layer;
etching a pattern part to be etched on the mask layer;
etching the pattern part to expose part of the dielectric layer;
growing a diamond nucleation layer on the exposed part of the dielectric layer;
and removing the residual mask layer.
In one embodiment, the step of forming the diamond nucleation layer comprises the step of adhering a temporary carrier sheet to the gallium nitride buffer layer comprising:
spin coating an adhesive on the front side of the temporary carrier;
baking the temporary slide glass with the right side facing upwards;
and after the temporary slide is cooled, the gallium nitride buffer layer is oppositely bonded with the front surface of the temporary slide.
In one embodiment, after inverting the structure of the gallium nitride buffer layer-dielectric layer-diamond layer, the method further comprises: and sequentially growing a barrier layer and a channel layer on the gallium nitride buffer layer.
In one embodiment, a source, a drain, and a gate are disposed on the channel layer.
In one embodiment, after inverting the structure of the gallium nitride buffer layer-dielectric layer-diamond layer, the method further comprises: and growing a channel layer and a barrier layer on the exposed gallium nitride buffer layer in sequence.
In one embodiment, a source, a drain, and a gate are disposed on the barrier layer.
According to the manufacturing method of the diamond-based gallium nitride device, the patterned diamond layer is formed, so that the stress between diamond and gallium nitride is greatly reduced, the manufacturing difficulty of the diamond-based gallium nitride device with the large wafer size (50mm or above) is reduced, and the industrialization of the diamond-based gallium nitride device with the large wafer size is facilitated.
Drawings
Fig. 1-10 are schematic diagrams of diamond-based gallium nitride devices according to some embodiments of the invention.
Reference numbers in the figures:
1-a substrate; 2-a gallium nitride buffer layer; 3-a dielectric layer; 4-diamond nucleation layer; 5-a diamond layer; 6-barrier layer; 7-a channel layer; an 8-source electrode; 9-a drain electrode; 10-a gate; 11-temporary slide.
Detailed Description
The following describes the manufacturing method of the diamond-based gallium nitride device according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 1 to 8, a method for manufacturing a diamond-based gallium nitride device according to an embodiment of the present invention includes:
s1: a gallium nitride buffer layer 2 is grown in sequence on the substrate 1.
The substrate 1 material includes, but is not limited to, sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride, and the like. In order to grow the gallium nitride buffer layer 2, the surface of the substrate 1 may be cleaned with a chemical reagent such as acetone and methanol, then dried with nitrogen, and then heated to a certain temperature (which may be 100 ℃ to 120 ℃) in a gas environment (hydrogen or nitrogen or a mixed gas of hydrogen and nitrogen) or vacuum by a metal organic chemical vapor deposition method or a molecular beam epitaxy method or a direct current sputtering method, so that gallium nitride is grown on the substrate 1, thereby forming the gallium nitride buffer layer 2 (shown in fig. 1). The specific process conditions for forming the gallium nitride buffer layer 2 can be selected according to actual conditions.
S2: a temporary carrier 11 is adhered on the gallium nitride buffer layer 2.
Wherein the temporary carrier 11 may be a silicon wafer. In order to bond the temporary slide 11 and the gallium nitride buffer layer 2, an adhesive is firstly coated on the front surface of the temporary slide 11 in a spin mode, then the temporary slide 11 is placed on a hot plate with the front surface facing upwards for baking, the temporary slide 11 is placed at room temperature for natural cooling after baking is finished, and after the temporary slide 11 is cooled, the gallium nitride buffer layer 2 and the front surface of the temporary slide 11 are bonded oppositely, so that the temporary slide 11 and the gallium nitride buffer layer 2 are bonded into a whole, and the structure shown in fig. 2 is formed.
S3: and removing the substrate 1, and inverting the formed temporary slide 11-gallium nitride buffer layer 2 structure.
The substrate 1 is removed by any one or a plurality of methods of laser lift-off, substrate polishing, dry etching or wet etching, and the specific method can be selected according to the actual substrate material. After removal of the substrate 1, only the temporary carrier 11 remains, the structure of the gallium nitride buffer layer 2. The structure of the temporary carrier 11-the gallium nitride buffer layer 2 is then inverted to form the structure shown in fig. 3.
S4: forming a dielectric layer 3 on the inverted gallium nitride buffer layer 2;
the inverted gallium nitride buffer layer 2 is located above the temporary slide 11, and in order to help the diamond layer which grows subsequently grow to grow on the gallium nitride buffer layer 2, a dielectric layer 3 needs to be formed on the gallium nitride buffer layer 2, wherein the material of the dielectric layer 3 includes but is not limited to SiN, AlN or SiO 2. One of the primary functions of the dielectric layer 3 is to prevent hydrogen ion etching used in diamond growth from damaging the underlying gallium nitride layer 2. The structures of the formed dielectric layer 3, the gallium nitride buffer layer 2 and the temporary carrier 11 are shown in fig. 4.
S5: selectively growing a diamond nucleation layer 4 on the dielectric layer 3 according to a preset pattern;
a mask layer may be grown on the dielectric layer 3, a pattern portion may be formed on the mask layer by photolithography according to a preset pattern, the pattern portion may be etched to expose the dielectric layer 3 at a corresponding position, a diamond nucleation layer 4 may be grown on the exposed dielectric layer 3, and after the growth of the diamond nucleation layer 4 is completed, the remaining mask layer may be removed to form the structure shown in fig. 5. Specifically, the mask layer may be a photoresist. The etching may be dry etching or wet etching. The diamond nucleation layer 4 can be grown by a method of grinding a patterned medium layer by diamond micropowder or pretreating diamond powder suspension, the diamond nucleation layer 4 can be in different shapes and sizes, and the process conditions for forming the diamond nucleation layer 4 need to be selected according to the shapes and sizes of the diamond nucleation layer.
S6: the diamond nucleation layer 4 is grown to form a patterned diamond layer 5.
Since the diamond nucleation layer 4 is selectively formed in the previous step, the growth conditions of diamond (including but not limited to methane concentration, growth pressure) can be controlled such that the diamond layer 5 will only grow on the diamond nucleation layer 4, thereby changing the diamond nucleation layer 4 into a patterned diamond layer 5, resulting in the structure shown in fig. 6. The diamond layer 5 may be formed by means of CVD (chemical vapour deposition) growth, the specific process of which is related to the thickness of the diamond. The thickness of diamond layer 5 is 25um-100 um. The patterned diamond layer 5 may substantially reduce the stress generated by the thermal and lattice mismatch between diamond and gallium nitride on large size wafers, reducing the risk of wafer bowing compared to a complete diamond layer.
Fig. 7 shows a pattern of diamond layers, in this example the diamond layer 5 is composed of a pattern of hatched areas, the boxes representing areas not covered by diamond layers. The diamond layer 5 can only cover the part (the position of a high-power amplifier and/or other devices with large heat productivity) with large heat productivity of the device in the gallium nitride microwave integrated circuit, and can play a good heat dissipation effect. In other embodiments, the diamond layer 5 may be composed of other patterns. It will be appreciated that the shape and size of the pattern of the diamond layer 5 may be selected according to the actual circumstances. It should be noted that the diamond layer covered area is only schematically shown in fig. 4, and in actual production, the pattern of the diamond layer covered area is more complicated, which is understood not to hinder the understanding of the solution by the skilled person.
S7: and removing the temporary slide 11, and inverting the formed gallium nitride buffer layer 2-dielectric layer 3-diamond layer structure 5.
The adhesive between the temporary slide 11 and the gallium nitride buffer layer 2 can be removed by adding or dissolving, so that the temporary slide 11 and the gallium nitride buffer layer 2 are peeled off, and the crystal structure of the gallium nitride buffer layer 2, the dielectric layer 3 and the diamond layer 5 is left. The crystal structure can be turned over by the manipulator, so that the crystal structure is inverted, that is, the structure of the gallium nitride buffer layer 2, the dielectric layer 3 and the diamond layer 5 from bottom to top is changed into the structure of the diamond layer 5, the dielectric layer 3 and the gallium nitride buffer layer 2 from bottom to top, and the structure shown in fig. 8 is formed.
After the crystal structure is inverted, which material is grown is selected according to the polarity of the gallium nitride buffer layer 2. If the buffer layer is a gallium nitride buffer layer 2 with nitrogen surface polarity, a barrier layer 6 and a channel layer 7 are sequentially grown on the gallium nitride buffer layer 2. The surface of the gallium nitride buffer layer 2 in contact with the barrier layer 6 has a nitrogen face polarity. Then, a source electrode 8, a drain electrode 9, and a gate electrode 10 are formed on the channel layer 7, respectively, wherein the gate electrode 10 is located between the source electrode 8 and the drain electrode 9. Finally, the nitrogen-face polar gallium nitride device shown in fig. 9 is formed.
If the buffer layer is a gallium nitride buffer layer 2 with gallium face polarity, a channel layer 7 and a barrier layer 6 are sequentially grown on the gallium nitride buffer layer 2. The surface of the gallium nitride buffer layer 2 in contact with the channel layer 7 has a gallium face polarity. Then, a source electrode 8, a drain electrode 9, and a gate electrode 10 are formed on the barrier layer 6, respectively, wherein the gate electrode 10 is located between the source electrode 8 and the drain electrode 9. Finally, the gallium nitride device with gallium face polarity shown in fig. 10 is formed.
The barrier layer 6 material includes but is not limited to AlGaN or InAlN, and the thickness of the barrier layer 6 is 3nm-100 nm. The barrier layer 6 can be formed by metal organic chemical vapor deposition or molecular beam epitaxy or direct current sputtering.
The channel layer 7 material includes, but is not limited to, GaN or InGaN. A two-dimensional electron gas (shown by a dotted line in fig. 7 and 8) having a high electron density and a high electron mobility exists on the surface of the channel layer 7 in contact with the barrier layer 6. The channel layer 7 may be formed by metal organic chemical vapor deposition, molecular beam epitaxy, or dc sputtering.
The source electrode 8 and the drain electrode 9 can be made of any alloy of titanium, aluminum, nickel and gold; the gate 10 may be a metal stack of nickel/gold or platinum/gold. The processes for forming the source electrode 8, the drain electrode 9 and the gate electrode 10 are prior art and will not be described herein.
In summary, the method for manufacturing a diamond-based gallium nitride device provided by the present application greatly reduces the stress between diamond and gallium nitride by forming the patterned diamond layer, thereby reducing the manufacturing difficulty of the diamond-based gallium nitride device with a large wafer size (50mm or larger), and facilitating the industrialization of the diamond-based gallium nitride device with a large wafer size.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. A method for manufacturing a diamond-based gallium nitride device, comprising:
growing a gallium nitride buffer layer on a substrate;
adhering a temporary slide on the gallium nitride buffer layer;
removing the substrate, and inverting the formed temporary slide-gallium nitride buffer layer structure;
forming a dielectric layer on the inverted gallium nitride buffer layer;
selectively growing a diamond nucleation layer on the dielectric layer according to a preset pattern;
growing the diamond nucleation layer to form a patterned diamond layer;
and removing the temporary slide glass, and inverting the structure of the formed gallium nitride buffer layer-dielectric layer-diamond layer.
2. The method of fabricating a diamond based gallium nitride device according to claim 1, wherein the step of forming the diamond nucleation layer comprises:
sequentially forming a mask layer on the dielectric layer;
etching a pattern part to be etched on the mask layer;
etching the pattern part to expose part of the dielectric layer;
growing a diamond nucleation layer on the exposed part of the dielectric layer;
and removing the residual mask layer.
3. The method for manufacturing a diamond-based gallium nitride device according to claim 1, wherein the step of adhering a temporary carrier on the gallium nitride buffer layer comprises:
spin coating an adhesive on the front side of the temporary carrier;
baking the temporary slide glass with the right side facing upwards;
and after the temporary slide is cooled, the gallium nitride buffer layer is oppositely bonded with the front surface of the temporary slide.
4. The method for manufacturing a diamond-based gallium nitride device according to claim 1, wherein after inverting the structure of the gallium nitride buffer layer-dielectric layer-diamond layer, further comprising: and sequentially growing a barrier layer and a channel layer on the gallium nitride buffer layer.
5. The method for manufacturing a diamond-based gallium nitride device according to claim 4, wherein a source, a drain and a gate are provided on the channel layer.
6. The method for manufacturing a diamond-based gallium nitride device according to claim 1, wherein after inverting the structure of the gallium nitride buffer layer-dielectric layer-diamond layer, further comprising: and sequentially growing a channel layer and a barrier layer on the exposed gallium nitride buffer layer.
7. The method of manufacturing a diamond-based gallium nitride device according to claim 6, wherein a source electrode, a drain electrode and a gate electrode are provided on the barrier layer.
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| CN110517950B (en) * | 2019-07-29 | 2021-06-18 | 太原理工大学 | Method for preparing sphalerite GaN film on diamond substrate |
| CN112786449A (en) * | 2019-11-07 | 2021-05-11 | 上海华为技术有限公司 | HEMT device manufacturing method, HEMT device and radio frequency power amplifier |
| CN111865220A (en) * | 2020-07-27 | 2020-10-30 | 北京国联万众半导体科技有限公司 | Quartz circuit for improving heat dissipation of terahertz frequency multiplier |
| CN112992675B (en) * | 2021-02-05 | 2022-12-27 | 中国电子科技集团公司第十三研究所 | Preparation method of porous diamond substrate for terahertz Schottky diode |
| CN112992678B (en) * | 2021-02-05 | 2022-09-13 | 中国电子科技集团公司第十三研究所 | Preparation method of GaN field effect transistor based on diamond substrate |
| CN113571410B (en) * | 2021-07-19 | 2024-02-02 | 太原理工大学 | Preparation method of low-interface thermal resistance diamond-based gallium nitride wafer material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006113539A2 (en) * | 2005-04-13 | 2006-10-26 | Group4 Labs, Llc | Semiconductor devices having gallium nitride epilayers on diamond substrates |
| WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6815241B2 (en) * | 2002-09-25 | 2004-11-09 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| US8058802B2 (en) * | 2007-09-28 | 2011-11-15 | General Electric Company | Thermal management article and method |
| CN101661876B (en) * | 2009-10-19 | 2011-10-26 | 中国电子科技集团公司第四十六研究所 | Method for preparing nitride self-supported substrate |
| US8575657B2 (en) * | 2012-03-20 | 2013-11-05 | Northrop Grumman Systems Corporation | Direct growth of diamond in backside vias for GaN HEMT devices |
| CN104218132A (en) * | 2013-05-29 | 2014-12-17 | 苏州新纳晶光电有限公司 | Fabrication method of GaN patterned substrate |
| CN105185824A (en) * | 2015-09-02 | 2015-12-23 | 成都嘉石科技有限公司 | Manufacturing method of semiconductor device |
| JP6679022B2 (en) * | 2016-02-29 | 2020-04-15 | 信越化学工業株式会社 | Diamond substrate manufacturing method |
| CN106783998A (en) * | 2016-12-16 | 2017-05-31 | 中国电子科技集团公司第五十五研究所 | A kind of GaN high electron mobility transistor based on diamond substrate and preparation method thereof |
| CN207134352U (en) * | 2017-05-31 | 2018-03-23 | 母凤文 | Gallium nitride device structure |
-
2018
- 2018-06-26 CN CN201810667077.2A patent/CN108598036B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006113539A2 (en) * | 2005-04-13 | 2006-10-26 | Group4 Labs, Llc | Semiconductor devices having gallium nitride epilayers on diamond substrates |
| WO2009073866A1 (en) * | 2007-12-07 | 2009-06-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Gate after diamond transistor |
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