CN108551714B - High-frequency signal control circuit and X-ray machine for X-ray emitter - Google Patents

High-frequency signal control circuit and X-ray machine for X-ray emitter Download PDF

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Publication number
CN108551714B
CN108551714B CN201810416027.7A CN201810416027A CN108551714B CN 108551714 B CN108551714 B CN 108551714B CN 201810416027 A CN201810416027 A CN 201810416027A CN 108551714 B CN108551714 B CN 108551714B
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signal
circuit
current
voltage
control circuit
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CN108551714A (en
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穆希华
冯锐
黄学庆
黄庆文
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Rui Ying Science And Technology Ltd Of Zhuhai City
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Rui Ying Science And Technology Ltd Of Zhuhai City
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G1/00X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/08Electrical details
    • H05G1/26Measuring, controlling or protecting
    • H05G1/30Controlling

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  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inverter Devices (AREA)

Abstract

The present invention discloses a kind of high-frequency signal control circuit and X-ray machine for X-ray emitter, and high frequency signal control circuit includes: frequency amplifying circuit, the frequency of the resonance current for amplifying input;Triangular signal generative circuit, at least based on by the resonance current generation triangular signal after frequency amplifying circuit amplification;Drive signal generation circuit, for based on by the resonance current and the triangular signal the first driving signal of generation and the second driving signal after frequency amplifying circuit amplification;Inversion drive signal generation circuit, for generating inversion driving signal based on first driving signal and the second driving signal, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal.Through the invention the inverter signal of higher frequency is capable of providing for the high-frequency signal control circuit and X-ray machine of X-ray emitter, to ensure that the quality of X-ray, can be used in the quality for promoting existing Medical Devices.

Description

High-frequency signal control circuit and X-ray machine for X-ray emitter
Technical field
The present invention relates to electronic circuit technology field more particularly to a kind of high-frequency signal controls for X-ray emitter Circuit and X-ray machine.
Background technique
Currently, domestic traditional its high frequency section of high pressure generator is all the IGBT control technology used, using this skill The reverse frequency of art only has 20KHZ or so, and the continuous popularization applied in Medical Devices with high pressure generator, especially exists (the too low quality that will affect X-ray of reverse frequency, actually required inverse in X-ray machine for the continuous improvement of the demand of application in X-ray machine Frequency is even as high as 400KHZ), the reverse frequency of provided 20KH is no longer satisfied existing requirement in the prior art ?.Therefore, it is badly in need of a kind of control circuit for being capable of providing higher reverse frequency, and guarantees that the circuit continual and steady can mention For required higher reverse frequency.
Summary of the invention
The embodiment of the present invention provides a kind of high-frequency signal control circuit and X-ray machine for X-ray emitter, at least Solve one of above-mentioned technical problem.
On the one hand, the present invention provides a kind of high-frequency signal control circuit for X-ray emitter, comprising:
Frequency amplifying circuit, the frequency of the resonance current for amplifying input;
Triangular signal generative circuit, at least based on raw by the resonance current after frequency amplifying circuit amplification At triangular signal;
Drive signal generation circuit, for based on by the resonance current and described three after frequency amplifying circuit amplification Angle wave signal generates the first driving signal and the second driving signal;
Inversion drive signal generation circuit drives for generating inversion based on first driving signal and the second driving signal Dynamic signal, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal.
In some embodiments, high-frequency signal control circuit further include:
Feedback of voltage and current control circuit, for voltage signal and electric current based on the metal-oxide-semiconductor inversion plate detected Signal generates feedback control signal, and is sent to the triangular signal generative circuit;
It is described at least to include: based on the resonance current generation triangular signal after being amplified by the frequency amplifying circuit
Based on by the resonance current and feedback control signal generation triangular wave after frequency amplifying circuit amplification Signal.
In some embodiments, high-frequency signal control circuit further include:
Voltage detecting circuit, for detecting the voltage signal of the metal-oxide-semiconductor inversion plate and to be transmitted to the voltage and current anti- Present control circuit;
Voltage protection circuit, for voltage signal detected by the voltage detecting circuit and voltage reference value, And voltage comparison result is sent to error information storage reset circuit;
Error information stores reset circuit, for receiving and storing the voltage comparison result, and works as the voltage ratio Compared with the result shows that when electric voltage exception generate reset signal, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further include:
Current detection circuit, for detecting the current signal of the metal-oxide-semiconductor inversion plate and to be transmitted to the voltage and current anti- Present control circuit;
Current protecting circuit, for current signal detected by the current detection circuit and current reference value, And electric current comparison result is sent to error information storage reset circuit;
The error information storage reset circuit is also used to receive and store the electric current comparison result, and works as the electricity Stream comparison result shows to generate reset signal when current anomaly, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further include:
Resonance current feed circuit is rectified for the resonance current to the metal-oxide-semiconductor inversion plate to obtain conversion electricity Pressure, and it is transmitted to the feedback of voltage and current control circuit;
Resonance current protects circuit, for the conversion voltage with reference to resonance potential, and by resonance comparison result It is sent to error information storage reset circuit;
The error information storage reset circuit is also used to receive and store the resonance and compares as a result, and when described humorous Vibration comparison result shows to generate reset signal when resonance current exception, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further include:
Inverter current feed circuit compares institute for converting inverter voltage for the inverter current of the metal-oxide-semiconductor inversion plate It states inverter voltage and is sent to the error information storage reset circuit with reference to inverter voltage, and by inversion comparison result;
The error information storage reset circuit is also used to receive and store the inversion comparison result, and when described inverse No-load voltage ratio compared with the result shows that when inverter current exception generate reset signal, to reset the control circuit.
In some embodiments, high-frequency signal control circuit further include:
Inversion plate temperature protects circuit, and the temperature inversion for the metal-oxide-semiconductor inversion plate that will test is temperature telecommunications Number, and it is sent to the error information storage reset circuit;
The error information storage reset circuit is also used to receive and store the temperature signal, and works as the temperature Electric signal shows to generate reset signal when temperature anomaly, to reset the control circuit.
In some embodiments, metal-oxide-semiconductor inversion plate described in high-frequency signal control circuit is constituted using metal-oxide-semiconductor.
On the other hand, the present invention also provides a kind of X-ray machines comprising height described in any one of the above embodiment of the present invention Frequency signal control circuit.
The beneficial effects of the present invention are the high-frequency signal control circuits and X for X-ray emitter through the invention Ray machine is capable of providing the inverter signal of higher frequency, to ensure that the quality of X-ray, can be used in promoting existing Medical Devices Quality.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment Attached drawing be briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, for ability For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached Figure.
Fig. 1 is the functional block diagram of an embodiment of the high-frequency signal control circuit for X-ray emitter of the invention;
Fig. 2 is the circuit theory of one embodiment of the high-frequency signal control circuit for X-ray emitter of the invention Figure;
Fig. 3 is the circuit diagram of an embodiment of the inversion drive signal generation circuit in the present invention;
Fig. 4 is the functional block diagram of one embodiment of the high-frequency signal control circuit for X-ray emitter of the invention;
Fig. 5 is sampling and the protection circuit diagram of the KV feedback signal of the embodiment of the present invention;
Fig. 6 is detection and the protection circuit diagram of the MA feedback signal of the embodiment of the present invention;
Fig. 7 is the resonance current feedback of the embodiment of the present invention and the schematic diagram of the excessively high protection circuit of resonance current;
Fig. 8 is the inverter current current foldback circuit schematic diagram of the embodiment of the present invention;
Fig. 9 is the overheating protection circuit schematic diagram of the inversion plate MOSFET of the embodiment of the present invention;
Figure 10 A and Figure 10 B are that the error information in the embodiment of the present invention stores reset circuit schematic diagram.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase Mutually combination.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation Between there are any actual relationship or orders.Moreover, the terms "include", "comprise", not only include those elements, and And further include other elements that are not explicitly listed, or further include for this process, method, article or equipment institute it is intrinsic Element.In the absence of more restrictions, the element limited by sentence " including ... ", it is not excluded that including described want There is also other identical elements in the process, method, article or equipment of element.
High-frequency signal control circuit of the invention is particularly suitable for X-ray emitter, but is not limited to X-ray emitter, For driving metal-oxide-semiconductor inversion plate to generate high-frequency signal, as shown in Figure 1, being the high-frequency signal for X-ray emitter of the invention The functional block diagram of one embodiment of control circuit is used for the high-frequency signal control circuit of X-ray emitter, packet in the embodiment It includes:
Frequency amplifying circuit 11, the frequency of the resonance current for amplifying input;
Triangular signal generative circuit 12, at least based on by the resonance electricity after the frequency amplifying circuit 11 amplification Stream generates triangular signal;
Drive signal generation circuit 13, for based on by the frequency amplifying circuit 11 amplification after resonance current and institute It states triangular signal and generates the first driving signal and the second driving signal;
Inversion drive signal generation circuit 14, for generating inversion based on first driving signal and the second driving signal Driving signal, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal.
Inversion plate is one piece of wiring board, and if there is complete original part can complete the function of inversion, but it does not include outside Other accessories such as shell;Inversion plate includes inverter, and inverter is a complete product, and buying can use, and not need Any processing is done again.Inverter is direct current energy (battery, battery) to be transformed into alternating current (generally 220V, 50Hz sine Wave), it is made of inverter bridge, control logic and filter circuit.
The high-frequency signal control circuit that the embodiment of the present invention provides can drive inversion plate to generate high-frequency signal, inversion plate The reverse frequency of output is up to 400KH, while also meeting X-ray emitter to the quality requirement of high-frequency signal.The present invention is real It applies example and two-way driving signal is generated using triangular signal generative circuit, controlled with resonance current and drive enabled output, one Denier resonance current overshoot, driving enable signal will end, play a protective role;In the premise for considering machine space and size Under, it is necessary to two-way driving signal is come while two blocks of inversion plates being driven to generate sufficiently large power;;The embodiment of the present invention uses MOSFET pipe inverter, input impedance is high, and switching frequency is high, ensure that we generate the hardware circuit of high-frequency signal.
As shown in Fig. 2, the electricity of one embodiment for the high-frequency signal control circuit for X-ray emitter of the invention Road schematic diagram generates high-frequency driving signal by the design circuit to drive metal-oxide-semiconductor (that is, inversion plate).Wherein, frequency amplification electricity Road 11 includes current transformer T1, inductance (L1, L2 and L11), resistance R122, resistance R123, amplifier U17, amplifier U18 and three NAND gate (U20A, U20B, U20C);Triangular signal generative circuit 12 includes triode Q2, capacitor C52, capacitor C53, amplifier U19;Drive signal generation circuit 13 includes d type flip flop U22A, NAND gate (U21A, U21B) and driving chip (U23) UC3709; TP23-TP27 and TP30 and TP31 is signal acquisition point;Specifically,
Resonance current by current transformer T1 sample, the secondary side of current transformer T1 be connected to inductance (L1, L2, L11) and the series circuit of resistance (R122, R123), according to the difference of resonance current frequency, the voltage at inductance and resistance both ends is just There are phase difference, the frequency of resonance current is bigger, and the advanced resistive voltage of the voltage at inductance both ends is more, amplifier U17 and amplifier U18 For the zero-crossing comparator of high speed, high or low level is obtained in its output end.Three NAND gates are passed through in two amplifier outputs (U20A, U20B and U20C) 74LS132 obtains the driving signal of 2 times of resonance current frequencies, what is exported in NAND gate U20B Under the action of driving signal, the on-off of high speed triode Q2 is controlled, and then control the charge and discharge of capacitor C52 and C53, generate frequency The triangular signal of modulation is compared, high ratio by the output signal VSET of high-speed comparator U19 and feedback control system Clock signal of the output signal as d type flip flop U22A compared with device U19, and the reversed-phase output phase of the D input terminal of U22A and U18 Even, two output signals of U22A and driving enable signal DRIVEEN are exported by two NAND gate U21A and U21B controls, then It exports to obtain control signal DRIVE1, DRIVE2 of driving circuit by driving chip (U23) UC3709.
The embodiment of the present invention generates two-way driving signal using triangular signal generative circuit, and drive is controlled with resonance current Enabled output is moved, once resonance current overshoots, driving enable signal will end, and U21 level changes, and U23 no longer exports drive Dynamic signal, plays a protective role;Generate sufficiently large power (50KW), it is necessary to which two blocks of inversion plates are completed.With regard to needing two Road driving signal is come while driving two blocks of inversion plates;Under the premise of considering machine space and size, this is best scheme.This Invention uses MOSFET pipe inverter, and input impedance is high, and switching frequency is high, ensure that we generate the hardware electricity of high-frequency signal Road, and can be with real-time guard inverter circuit.
As shown in figure 3, the circuit diagram of the embodiment for the inversion drive signal generation circuit 14 in the present invention, packet Include resistance R117-R120, resistance R136-R139, diode V25-28, diode V33-V36, P-channel power metal-oxide (semiconductor) field effect transistor (IRF9540) Q3, Q5, Q7, Q9 and field-effect tube (IRF530N) Q4, Q6, Q8, Q10, electricity Hold C65 and C66;TP32-TP34 and TP28 is signal acquisition point.Specifically, by control signal DRIVE1, DRIVE2 go control by The driving circuit that IRF530N and IRF9540 is constituted, and then obtain the original driving signal of control inversion plate.
As shown in figure 4, the original of one embodiment for the high-frequency signal control circuit for X-ray emitter of the invention Block diagram is managed, which includes: frequency amplifying circuit 11, and triangular signal generative circuit 12 drives Dynamic signal generating circuit 13, inversion drive signal generation circuit 14, the feedback control circuit 2 being connect with frequency amplifying circuit 11, The voltage detecting circuit 31 and inverter current feed circuit 51 being connect respectively with the feedback control circuit, with the voltage detecting The voltage protection circuit 32 that circuit 31 connects and the resonance current protection circuit 52 being connect with inverter current feed circuit 51, In, feedback control circuit 2 is connect by CPU with frequency amplifying circuit 11, and voltage detecting circuit 31 is used to detect the electricity of inversion plate Pressure signal is simultaneously sent to CPU by feedback control circuit 2, and voltage protection circuit 32 is used for voltage detecting circuit 31 is detected Voltage signal sends error information storage reset circuit 8, resonance electricity for comparison result later compared with setting reference voltage value Current feedback circuit 51 is used to detect the resonance current of inversion plate and feeds back to CPU, resonance current protection by feedback control circuit Circuit 52 is used to convert the resonance current detected of resonance current feed circuit 51 to corresponding voltage signal, and joins with setting Comparison result feedback is stored into reset circuit 8 to error information after examining voltage value relatively;
High-frequency signal control circuit further includes;
Current detection circuit 41, current protecting circuit 42, inverter current feed circuit 6 and inversion plate temperature protect circuit 7; Wherein, current detection circuit 41 is used to detect the current value of inversion plate, and current protecting circuit 42 is used for current detection circuit 41 Detected current value is converted into corresponding voltage value, and is compared with setting reference voltage value, then by comparison result Feed back to error information storage reset circuit 8;Inverter current feed circuit 6 is used to detect the inverter current of inversion plate and by its turn Corresponding voltage signal is turned to, is then compared operation with preset voltage reference value, operation result is fed back into report Wrong information stores reset circuit 8;The temperature that inversion plate temperature protection circuit 7 is used to implement to monitor inversion plate, and when monitoring knot When fruit shows that inversion plate temperature is higher than set temperature threshold value, generates error information and feed back to error information storage reset circuit 8; Error information storage reset circuit 8, which is used to store the error information that each detection circuit is fed back and controls inversion plate, to be resetted, To realize that the protection to inversion plate controls.
As shown in figure 5, sampling and protection circuit diagram for the KV feedback signal of the embodiment of the present invention comprising, electricity Press detection circuit 31 and voltage protection circuit 32, wherein voltage detecting circuit includes at least resistance R1-R8, resistance R16, R19, R21, R22, R24, R25, R27, capacitor C171, C172, C1-C3, C9, op-amp U1A, U1B and U2B, diode V1-V3 And V6;Voltage protection circuit 32 includes resistance R9-R15, R28, R29, R32-R36, capacitor C6, C6, C15-C17, diode IC1, op-amp U2A and U3, wire jumper JP1 and JP2;TP1, TP 2, TP 4, TP 5, TP 7 and TP 8 are signal acquisition point. Specifically, the circuit design drawing originally implemented is related to KV feedback, negative KV feedback, the sampling of KV setting and operation and protection part: The real-time sampling of positive KV, negative KV are realized by the circuit of design, and sampled signal is carried out by amplifier and KV setting signal Operation to reach real time monitoring KV value, and is protected overvoltage.
KV+, KV- feedback signal inputted from high voltage output module (high voltage output module of inversion plate) is by capacitance-resistance point What the mode of pressure obtained.The input terminal of circuit is the voltage feedback signal taken out from the anode and cathode of pressure-oil tank, and upper end is cathode The voltage feedback signal of taking-up, lower end are the voltage feedback signals that anode takes out, and first pass around a filter circuit, then pass through again It crosses a medical amplifying circuit and finally passes through a follower (U2B), the feedback voltage of output is that 1V corresponds to 20KV, as voltage The feedback input signal of feedback element error amplifier;The protection circuit of KV is detected using the comparator of LM311 composition, Protect reference voltage optional by two ways, one is using fixed reference voltage, another kind be by CPU through digital-to-analogue conversion and The KV deviation Reference signal KV_SET come selects one way in which using wire jumper JP1.Wherein, the output of operational amplifier U2B Signal KVFBK is exported to feedback control circuit 2, and the output signal KVOVER of operational amplifier U3 exports multiple to error information storage Position circuit 8.
In the embodiment of the present invention, the effect of wire jumper JP2: when jumper connection 1,2, maximum output voltage is 150KV;When jumper connection 2,3 When maximum output voltage be 125KV;For realizing the switching of different output voltages, to meet different practical application requests.Fortune The effect for calculating amplifier U2A is exactly on the one hand quick tracking sampling exports sampled voltage KV_FD to single-chip microcontroller (CPU), another party Face is output to test point TP7, can pass through oscillograph tested K V_FD voltage waveform.KV_FD signal is exactly the sampled voltage of KV. , to realize constantly showing for collection voltages waveform, in addition it can will be believed with external oscillograph test waveform by this partial circuit It number is output to single-chip microcontroller and carries out further operation.
As shown in fig. 6, detection and protection circuit diagram for the MA feedback signal of the embodiment of the present invention.It include: resistance (R17, R 18, R 20, R 23, R 26, R 30, R 31, R 37-R 69), capacitor (C7, C 8, C 10-C 12, C 18-C 35), diode (V4, V 5, V 7-V 15), rheostat RW2-RW5, op-amp U4A, U4B, U5-U8.
Circuit design in the present embodiment is related to positive MA feedback, the sampling of negative MA feedback, operation and protection part, by setting The circuit of meter realizes the real-time sampling of positive MA, negative MA, and sampled signal is carried out operation by amplifier and MA setting signal, from And reach real time monitoring MA value, and protect to overcurrent situations.
MA+, MA- feedback signal inputted from pressure-oil tank by filtering, diode clamp, again through amplifier adjust times magnification After number, the photography MA feedback signal and perspective MA feedback signal of standard are obtained.The proportionate relationship of MA feedback signal and MA value is 1V: 100MA, adjusting RW4 can change this proportionate relationship.The protection circuit of positive and negative MA is examined using the comparator of LM311 composition It surveys.There are two types of the reference levels of protection, and mode is optional, and one is the mode with electric resistance partial pressure, another kind is to be turned by CPU through digital-to-analogue The MA deviation Reference signal MA_SET changed selects one way in which using wire jumper JP3.The output of operational amplifier U5 is believed The output signal MA-OVER of number MA+OVER and operational amplifier U6 is exported to error information and is stored reset circuit 8.
It is mainly to track the sampling feedback of fluoroscopy current and can be measured by TP13, TP14 that U7, which forms circuit,;Output is adopted Sample signal is further calculated to single-chip microcontroller;U8 forms the sampling feedback of circuit tracing photography tube current and can by TP12, TP16 With measurement;Output sampled signal is further calculated to single-chip microcontroller.FMA_FAD and RMA_FAD has respectively represented the perspective after sampling Photography tube current digital quantity after current digital quantity and sampling, the two signals are directly output to single chip circuit, single-chip microcontroller meeting Exposure real output value is adjusted according to the two values.
As shown in fig. 7, the schematic diagram of the excessively high protection circuit of resonance current feedback and resonance current for the embodiment of the present invention, It includes current transformer T2, capacitor C60, C61, C68, C69, C169 and C170, diode V29-V32, resistance R126-R130 And R133, rheostat RW8, comparator U25, signal output node CURRENT BACK are connected with feedback control circuit 2, compare The signal CURRENT OVER that publishes books of device U25 is connected with error information storage reset circuit 8.
This part corresponds to resonance current feedback, resonance overcurrent protection, and the circuit designed through this embodiment realizes resonance electricity The sampling of stream, amplifier calculates and overcurrent protection.By current transformer T2 (no-load voltage ratio 1:30), obtain with resonance current at just The low current of ratio obtains and resonance current phase after diode V29, V30, D31, D32 full-bridge rectification on resistance R126 Corresponding voltage signal, the current feedback signal as current control link.
Important parameter when resonance current is inverter work, its size directly reflect the working condition of major loop, If resonance current is excessive, increase the electric current for flowing through switching tube, on-state loss and switching loss increase, and jeopardize switching tube Safety, when resonance current exceeds allowed band, stops the work of major loop so needing to be monitored it.This error detection Circuit theory is comparatively fairly simple, and the resonance current in main circuit is transformed to low current by current transformer T2, passes through One full bridge rectifier is converted into after voltage signal compared with the voltage of setting, if feedback voltage is greater than the set value, is compared Device LM311 exports high level, the error signal output of generation.
As shown in figure 8, being the inverter current current foldback circuit schematic diagram of the embodiment of the present invention comprising current transformer T3-T5, resistance R148-R153, R156-R162, R168-R171, capacitor C72-C74, C77, C78, C82, C86, C89, C92, Diode V38, V41, V46, rheostat RW9 and comparator U11, U14, U15 (operational amplifier LM311).
This part corresponds to sampling, operation and the protection of inverter current feedback, and the circuit designed through the embodiment of the present invention is real The real-time sampling of existing inverter current overcurrent, and sampled signal is subjected to operation by amplifier and setting signal, to reach real When monitor inverter current value, and overcurrent situations are protected.And (output signal is deposited and is resetted in error signal progress INV CURRENT OVER1, INV CURRENT OVER2, INV CURRENT OVER3, which export to error information to store, resets electricity Road 8).
Current transformer on inversion plate is connected with one of energy storage filter capacitor, when inverter current is more than limit value When, the protection signal of high level is generated, the work of major loop is stopped.The current signal to come from the sampling of inversion plate is mutual through overcurrent Sensor T3 obtains voltage signal on resistance R148, using after rectifies compared with the voltage of setting, if instead Feedthrough voltage is greater than the set value, and comparator LM311 exports high level, the error signal output of generation.
As shown in figure 9, the overheating protection circuit schematic diagram of the inversion plate MOSFET for the embodiment of the present invention, including luminous two Pole pipe LD8, resistance R176 and R179, optocoupler E1, temperature switch S and shorting stub T.
This part corresponds to the protection of inversion plate temperature, and design temperature sensor through the embodiment of the present invention is to inversion plate temperature It is excessively high to be protected.Temperature signal THSW is brought by optocoupler E1 from inversion plate temperature detect switch (TDS), exports a temperature control protection letter Number.When temperature has been more than the range allowed to inversion plate MOSFET in the process of work, temperature detect switch (TDS) is disconnected, and TOVER becomes High level (output to error signal stores reset circuit 8), cuts off the work of main inversion circuit, reaches the work of protection MOSFET With.
As shown in Figure 10 A-10B, error information stores reset circuit schematic diagram comprising the storage of the first error information resets Circuit (such as Figure 10 A) and the second error information storage reset circuit (such as Figure 10 B), wherein the storage of the first error information resets electricity Road includes tri-state RS latched flip flop U16 (model CD4043), resistance R153-R155, light emitting diode LD1-LD3, reverse phase Device U24A, U24B and U24C, diode V39, V40, V44, V45, capacitor C70 and C76;Second error information stores reset circuit Including tri-state RS latched flip flop U12 (model CD4043), resistance R163-R167, R177 and R178, phase inverter U13A- U13F, light emitting diode LD4-LD7, diode V42, V43, V49, V50, capacitor C83-C85.
The latch of fault message realizes that output terminates to reverser using tri-state RS latched flip flop CD4043 TC4584BP indicates corresponding fault message to drive LED, and convenient judgement and maintenance to phenomenon of the failure, CD4043's answers It is realized by the way of RC electrification reset position.
SAM FAULT signal and/SAM FAULT signal are interrupt signal, when U11, U12 input terminal detect any one Or when multiple signals will export SAM FAULT signal to Schmidt trigger U13E, it will after reaching trigger threshold value Output/SAM FAULT signal, the signal are output to single chip circuit, and single-chip microcontroller will issue the code that reports an error, and terminate exposure, Protect inversion circuit, fuel tank and bulb.
The embodiment of the present invention also provides a kind of X-ray machine comprising is used for X-ray described in any of the above-described embodiment of the present invention The high-frequency signal control circuit of generator.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member It is physically separated with being or may not be, component shown as a unit may or may not be physics list Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs In some or all of the modules achieve the purpose of the solution of this embodiment.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the application, rather than its limitations;Although The application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it still may be used To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features; And these are modified or replaceed, each embodiment technical solution of the application that it does not separate the essence of the corresponding technical solution spirit and Range.

Claims (7)

1. a kind of high-frequency signal control circuit for X-ray emitter, comprising:
Frequency amplifying circuit, the frequency of the resonance current for amplifying input;
Triangular signal generative circuit, at least based on by the resonance current generation three after frequency amplifying circuit amplification Angle wave signal;
Drive signal generation circuit, for based on by the resonance current and the triangular wave after frequency amplifying circuit amplification Signal generates the first driving signal and the second driving signal;
Inversion drive signal generation circuit, for generating inversion driving letter based on first driving signal and the second driving signal Number, to drive metal-oxide-semiconductor inversion plate to generate high-frequency signal;
Feedback of voltage and current control circuit, for voltage signal and current signal based on the metal-oxide-semiconductor inversion plate detected Feedback control signal is generated, and is sent to the triangular signal generative circuit;
It is described at least to include: based on the resonance current generation triangular signal after being amplified by the frequency amplifying circuit
Based on by the resonance current and feedback control signal generation triangular signal after frequency amplifying circuit amplification.
2. control circuit according to claim 1, which is characterized in that further include:
Voltage detecting circuit, for detecting the voltage signal of the metal-oxide-semiconductor inversion plate and being transmitted to the feedback of voltage and current control Circuit processed;
Voltage protection circuit, for voltage signal detected by the voltage detecting circuit and voltage reference value, and will Voltage comparison result is sent to error information storage reset circuit;
Error information stores reset circuit, for receiving and storing the voltage comparison result, and when the voltage compares knot Fruit shows to generate reset signal when electric voltage exception, to reset the control circuit.
3. control circuit according to claim 2, which is characterized in that further include:
Current detection circuit, for detecting the current signal of the metal-oxide-semiconductor inversion plate and being transmitted to the feedback of voltage and current control Circuit processed;
Current protecting circuit, for current signal detected by the current detection circuit and current reference value, and will Electric current comparison result is sent to error information storage reset circuit;
The error information storage reset circuit is also used to receive and store the electric current comparison result, and works as the electric current ratio Compared with the result shows that when current anomaly generate reset signal, to reset the control circuit.
4. control circuit according to claim 2, which is characterized in that further include:
Resonance current feed circuit is rectified for the resonance current to the metal-oxide-semiconductor inversion plate to obtain conversion voltage, and It is transmitted to the feedback of voltage and current control circuit;
Resonance current protects circuit, for the conversion voltage and refers to resonance potential, and resonance comparison result is sent Reset circuit is stored to error information;
The error information storage reset circuit is also used to receive and store the resonance and compares as a result, and when the response ratio Compared with the result shows that when resonance current exception generate reset signal, to reset the control circuit.
5. control circuit according to claim 2, which is characterized in that further include:
Inverter current feed circuit, it is more described inverse for converting inverter voltage for the inverter current of the metal-oxide-semiconductor inversion plate Time variant voltage is sent to the error information storage reset circuit with reference to inverter voltage, and by inversion comparison result;
The error information storage reset circuit is also used to receive and store the inversion comparison result, and works as the inversion ratio Compared with the result shows that when inverter current exception generate reset signal, to reset the control circuit.
6. control circuit according to claim 2, which is characterized in that further include:
Inversion plate temperature protects circuit, and the temperature inversion for the metal-oxide-semiconductor inversion plate that will test is temperature signal, and It is sent to the error information storage reset circuit;
The error information storage reset circuit is also used to receive and store the temperature signal, and works as the temperature telecommunications Number show to generate reset signal when temperature anomaly, to reset the control circuit.
7. a kind of X-ray machine, which is characterized in that including control circuit described in any one of claims 1-6.
CN201810416027.7A 2018-05-03 2018-05-03 High-frequency signal control circuit and X-ray machine for X-ray emitter Active CN108551714B (en)

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Application publication date: 20180918

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Denomination of invention: High frequency signal control circuit for X-ray generator and X-ray machine

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