CN108508383B - Hall piece with threshold value adjusting function, hall sensor and threshold value adjusting method - Google Patents
Hall piece with threshold value adjusting function, hall sensor and threshold value adjusting method Download PDFInfo
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- CN108508383B CN108508383B CN201810264891.XA CN201810264891A CN108508383B CN 108508383 B CN108508383 B CN 108508383B CN 201810264891 A CN201810264891 A CN 201810264891A CN 108508383 B CN108508383 B CN 108508383B
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- 239000002184 metal Substances 0.000 claims description 13
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009191 jumping Effects 0.000 description 2
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- 230000010365 information processing Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N52/00—Hall-effect devices
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Abstract
The invention provides a Hall plate with a threshold value adjusting function, a Hall sensor and a threshold value adjusting method, which solve the problems that in the prior art, the design cost of a new product is too high, the matching of a comparator and the Hall plate is difficult, the error of a switching point of the Hall sensor is large, and the like. The Hall plate with the threshold value adjusting function comprises a driving electrode with a driving voltage added on one diagonal and an output electrode with an output voltage added on the other diagonal, control electrodes V H1 and V H2 are arranged on the connecting line of the output electrodes, and the control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting line of the driving electrodes; the control electrodes V H1 and V H2 are respectively connected with external current sources I D1 and I D2 through resistor arrays; the sum of I D1 and I D2 is a constant C. The Hall sensor adopting the Hall plate has the advantages that the comparator for the Bop and Brp in the circuit adopts the zero-crossing comparator, the design can simplify the circuit design, and the accuracy of the switching point of the Hall sensor and the signal-to-noise ratio of the Hall plate are obviously improved on the premise of not improving the cost.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and relates to a Hall plate with a threshold value adjusting function, a Hall sensor and a threshold value adjusting method.
Background
The Hall plate is a sensitive device of the Hall sensor, is a silicon-based semiconductor device, and is integrated with a subsequent processing circuit on the same silicon wafer to form the Hall sensor. Hall sensors are widely used in aspects of industrial automation technology, detection technology, information processing and the like. The circuit block diagrams of the conventional hall chip structure and the conventional hall sensor are shown in fig. 1 and 2, driving voltages are applied to electrodes on one diagonal, output voltages are obtained on electrodes on the other diagonal, when a magnetic field passes through the hall chip vertically, the output voltages change, the strength of a measured magnetic field can be reflected, and after the signals are amplified, switching points Bon (magnetic on point, sensor output low level) and Boff (magnetic Guan Duandian, sensor output high level) are set through a subsequent comparator. However, the above-described method has the following drawbacks: when a Hall sensor switch with different switch points is needed, a subsequent comparator circuit needs to be redesigned, so that the design cost of a new product is overhigh; and because the comparator circuit is far away from the signal sensitive device (Hall piece), the matching of the comparator and the Hall piece is difficult, and therefore, the error of the switching point of the Hall sensor is large, and the use is influenced.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a Hall plate with a threshold value adjusting function, a Hall sensor and a threshold value adjusting method, which can simplify the design of a circuit and improve the accuracy of a switching point of the Hall sensor on the premise of not improving the cost.
In order to achieve the above purpose, the technical solution provided by the present invention is:
The Hall plate with the threshold value adjusting function comprises a driving electrode with a driving voltage added on one diagonal and an output electrode with an output voltage on the other diagonal, and is characterized in that:
Control electrodes V H1 and V H2 are arranged on the connecting line of the output electrodes, and control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting line of the driving electrodes;
The control electrodes V H1 and V H2 are respectively connected with external current sources I D1 and I D2 through resistor arrays; the sum of I D1 and I D2 is a constant C.
Further, the control current levels of the control electrodes V H1 and V H2 are adjusted by the resistance values of the resistor array.
Further, it is noted that the distance between the centers of the two output electrodes is L, the distance between the centers of the two control electrodes is N, and when N is closer to L (i.e., the greater the distance between the control electrodes V H1 and V H2), the greater the change of the control current to the output voltage, the lower the power consumption of the entire system. However, since the output electrode and the control electrode have certain dimensions, in order to ensure that the output electrode and the control electrode do not have a short circuit, the value of N/L is in the range of 0.60 to 0.85, and preferably about N/l=0.82, for example, N/l=0.83.
Further, the magnitude of the constant C is related to the power consumption and control precision of the Hall piece, and the constant C is selected in a compromise; the larger the value of C, the higher the control accuracy, but the larger the power consumption of the entire system. Conversely, the lower the power consumption, the lower the control accuracy, resulting in a larger error in the threshold point. Thus, preferably, C takes 10uA.
The invention also provides a Hall sensor with a threshold value adjusting function, which is characterized in that: the device comprises a Hall piece and a comparator for comparing a turn-on threshold value Bop with a turn-off threshold value Brp; the Hall plate is provided with the threshold value adjusting function; the comparator for comparing the on threshold Bop and the off threshold Brp adopts a zero-crossing comparator.
Meanwhile, the invention also provides a threshold value adjusting method of the Hall piece, which is characterized in that: the method comprises the following steps:
1) Control electrodes V H1 and V H2 are arranged on the connecting line of the Hall plate output electrode, and control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting line of the driving electrode; the control electrodes V H1 and V H2 are respectively connected with external current sources I D1 and I D2 through a resistor array, and the sum of I D1 and I D2 is a constant C;
2) The metal layer is used for connecting different resistors in the resistor array to obtain different control currents, so that the threshold value is adjusted, namely, the metal layer is used as an interconnection line between the resistors, and when corresponding products are manufactured according to the required threshold value, the metal layer is used for connecting proper resistors in the resistor array to control the currents, so that the design requirement is met;
when I D1＝ID2, the control value of the control electrodes V H1 and V H2 to the threshold value is zero; the control electrode does not control the threshold point at this time, and the threshold value is zero; however, in practical situations, to prevent the hall chip from jumping back and forth at the zero point, the threshold value is not taken to be zero.
When I D1-ID2 >0, V H1>VH2 has a threshold size determined by the size of I D1-ID2, and therefore, the turn-on threshold Bop is determined by I D1-ID2;
When I D2-ID1 >0, V H2>VH1 has a threshold size determined by the size of I D2-ID1, and thus the cutoff threshold Brp is determined by I D2-ID1.
The principle of the invention is as follows:
In order to control the output voltage, the threshold value is adjusted to obtain Hall plates with different switching points, control electrodes V H1 and V H2 are arranged on the connecting lines of the output electrodes, and the control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting lines between the driving electrodes. The control electrodes V H1 and V H2 are respectively connected with external current sources I D1 and I D2 through resistor arrays; and the current difference I D1-ID2 poured into the control electrode meets the specific requirement: i D1+ID2＝C,ID1-ID2 = n, where C is a constant, e.g. C takes an optimal value of 10uA; n is a series of differential values, such as 0.5,1,1.5,2,2.5,3,3.5 (uA) … …, to represent different thresholds (of course, n may also take any value between 0 and 10 to obtain any non-integer threshold, but in the design of the hall sensor, for systemization and ease of application, the threshold generally takes discrete finite points, similar to a resistor series), and the specific n represents how much gauss depends on the hall sheet material, the doping concentration, the structure (thickness and shape) of the hall sheet, and so on.
For example, in the structure shown in FIG. 3, the length of the diagonal line of the Hall plate is 100um, the distance between the control electrode and the output electrode is 2um, the widths of the two electrodes are 6um, the material is silicon, the N-type epitaxial layer resistor forms the Hall plate, the thickness is 10um, the doping concentration is 2.3X10-16 electrons/cm 3, at this time, the corresponding threshold value of the 0.5uA differential driving current is 10 gauss through test, that is, when no magnetic field exists, the output voltage of the Hall plate control electrode V H1 is higher than the output voltage of the control electrode V H2, and the output voltage is higher than the Hall voltage which is partially equivalent to the generation of the magnetic field of 10 gauss; the threshold represented by the other differential currents is then the corresponding threshold proportional to the control current of 0.5uA (representing different thresholds for different hall plate structures and doping concentrations, but all available through testing); to zero-cross the hall output signal, a magnetic field needs to be applied so that V H2＝VH1 causes the subsequent zero-crossing comparator to detect the point, and the magnetic field is considered to reach the Bop switching point to cause the chip output to flip (by controlling the current and the specific magnetic field, the zero-crossing comparator can detect that the magnetic field reaches the threshold value and then cause the chip output to flip). The control electrode is connected with an external current source through the resistor array, the requirement of the I D1-ID2 array can be met, when different thresholds are required to be changed so as to obtain Hall plates with different switching points, only one metal layer is required to be changed, and different resistors in the resistor array are connected through the metal layer, so that products with different switching points can be obtained.
The invention has the advantages that:
The Hall sensor adopting the Hall plate has the advantages that the comparator used for the Bop and Brp in the circuit can adopt the zero-crossing comparator, and when the Hall sensor with different switching points is required to be switched, the subsequent comparator circuit is not required to be redesigned; the design can simplify the circuit design, and can obviously improve the accuracy of the switching point of the Hall sensor and the signal-to-noise ratio of the Hall piece on the premise of not improving the cost.
Drawings
Fig. 1 is a structural diagram of a conventional hall chip;
FIG. 2 is a circuit block diagram of a conventional Hall sensor;
FIG. 3 is a block diagram of a Hall plate of the present invention;
FIG. 4 is a schematic diagram of a resistor array on a Hall plate according to the present invention;
Fig. 5 is a circuit block diagram of the hall sensor of the present invention.
The reference numerals are as follows:
1-resistance; 2-metal layer.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings and examples:
As shown in fig. 3 to 5, the hall chip includes a driving electrode to which a driving voltage is applied at one diagonal and an output electrode to which an output voltage is applied at the other diagonal; in order to enable the Hall plate to have a threshold value adjusting function, control electrodes V H1 and V H2 are arranged on the connecting line of the output electrodes, and control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting line of the driving electrode; the control electrodes V H1 and V H2 are connected to external current sources I D1 and I D2, respectively, through a resistor array, and the sum of I D1 and I D2 is made constant C. When the Hall pieces with different switching points are obtained by changing different thresholds, the Hall pieces with different switching points can be obtained by only changing one metal layer 2 and connecting different resistors 1 in the resistor array by using the metal layer 2. As shown in fig. 4, each resistor in the resistor array is connected through the metal layer 2, if the connection relation of each resistor 1 needs to be changed, the resistor can be adjusted according to the required resistance, the corresponding metal layer 2 is jumped to the position of a broken line in the figure, and conduction is continued through other devices (such as MOS transistors) so as to obtain a proper control current.
By adopting the Hall sensor with the Hall plate with the threshold value adjusting function, a comparator used for comparing the on threshold value Bop and the off threshold value Brp in the circuit can adopt a zero-crossing comparator.
The threshold value adjusting method of the Hall plate comprises the following steps:
1) Control electrodes V H1 and V H2 are arranged on the connecting line of the output electrodes, and control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting line of the driving electrodes; the control electrodes V H1 and V H2 are respectively connected with external current sources I D1 and I D2 through a resistor array, and the sum of I D1 and I D2 is a constant C;
the larger the distance between the control electrodes V H1 and V H2 is, the larger the change of the control current to the output voltage is, and the lower the power consumption of the whole system is;
For example: the length of the diagonal line of the Hall plate output electrode is 100um, the two output electrodes are respectively positioned at the end points of the diagonal line, the width of the output electrode is 6um, the control electrode is positioned on the connecting line of the output electrodes, the distance between the control electrode and the adjacent output electrode is 2um, the width of the control electrode is 6um, thus the distance N between the centers of the two electrodes in the control electrode is 78um, the distance L between the centers of the two electrodes in the output electrode is 94um, and N/L=78/94=0.83; in this case, the control current changes the output voltage more and the power consumption less.
2) According to different switching points of a follow-up circuit of the Hall sensor, different resistors in the resistor array are connected by using a metal layer, so that different control currents can be obtained, and then the control currents are adjusted to a required threshold value;
when I D1＝ID2, the control value of the control electrodes V H1 and V H2 to the threshold is zero, i.e. the control electrode does not control the threshold point at this time, and the threshold is zero; however, in practical situations, to prevent the hall chip from jumping back and forth at the zero point, the threshold value is not taken to be zero.
When I D1-ID2 >0, V H1>VH2 has a threshold size determined by the size of I D1-ID2, and therefore, the turn-on threshold Bop is determined by I D1-ID2;
When I D2-ID1 >0, V H2>VH1 has a threshold size determined by the size of I D2-ID1, and thus the cutoff threshold Brp is determined by I D2-ID1.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made without departing from the spirit and scope of the invention.
Claims (6)
1. The Hall plate with the threshold value adjusting function is applied to a Hall switch, and comprises a driving electrode with a driving voltage added to one diagonal and an output electrode with an output voltage added to the other diagonal, and is characterized in that:
Control electrodes V H1 and V H2 are arranged on the connecting line of the output electrodes, and control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting line of the driving electrodes;
The control electrodes V H1 and V H2 are respectively connected with external current sources I D1 and I D2 through resistor arrays; the sum of I D1 and I D2 is a constant C; the difference between I D1 and I D2 is n, n represents different thresholds, and any value between 0 and 10uA is taken; when different thresholds need to be changed, only a metal layer is used for connecting different resistors in the resistor array;
the control current magnitude of the control electrodes V H1 and V H2 is adjusted by the resistance value of the resistor array.
2. The hall chip with threshold adjustment function applied to a hall switch according to claim 1, wherein: the value range of N/L is 0.60-0.85, wherein L is the distance between the centers of the two output electrodes, and N is the distance between the centers of the two control electrodes.
3. The hall chip with threshold adjustment function applied to a hall switch according to claim 1 or 2, wherein: the constant C of the sum of I D1 and I D2 is 10uA.
4. The hall chip with threshold adjustment function applied to a hall switch according to claim 3, wherein: n/l=0.83.
5. Be applied to hall sensor that hall switch has threshold value adjustment function, be applied to hall switch, its characterized in that: the device comprises a Hall piece and a comparator for comparing a turn-on threshold value Bop and a turn-off threshold value Brp of a Hall switch;
The Hall plate with the threshold value adjusting function is adopted by the Hall plate according to any one of claims 1 to 4;
the comparator for comparing the on threshold value Bop and the off threshold value Brp of the hall switch adopts a zero-crossing comparator.
6. A method for adjusting a threshold value of a hall plate applied to a hall switch, based on the hall plate with a threshold value adjusting function applied to the hall switch according to any one of claims 1 to 4, characterized by comprising the following steps:
1) Control electrodes V H1 and V H2 are arranged on the connecting line of the Hall plate output electrode, and control electrodes V H1 and V H2 are symmetrically arranged relative to the connecting line of the driving electrode; the control electrodes V H1 and V H2 are respectively connected with external current sources I D1 and I D2 through a resistor array, and the sum of I D1 and I D2 is a constant C;
2) Different resistors in the resistor array are connected by adopting a metal layer to obtain different control currents, so that the threshold value is adjusted;
When I D1＝ID2, the control value of the control electrodes V H1 and V H2 to the threshold value is zero;
When I D1-ID2 >0, V H1>VH2 has a threshold size determined by the size of I D1-ID2, and therefore, the turn-on threshold Bop is determined by I D1-ID2;
When I D2-ID1 >0, V H2>VH1 has a threshold size determined by the size of I D2-ID1, and thus the cutoff threshold Brp is determined by I D2-ID1.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102636761A (en) * | 2011-02-08 | 2012-08-15 | 英飞凌科技股份有限公司 | Low offset spinning current hall plate and method to operate it |
| CN208000371U (en) * | 2018-03-28 | 2018-10-23 | 中国科学院西安光学精密机械研究所 | Hall piece with threshold value adjusting function and Hall sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2237373B1 (en) * | 1973-07-09 | 1976-04-30 | Radiotechnique Compelec | |
| JPH0769407B2 (en) * | 1990-03-02 | 1995-07-31 | 株式会社東芝 | Magnetic detection device |
| US7372119B2 (en) * | 2001-10-01 | 2008-05-13 | Asahi Kasei Microsystems Co., Ltd. | Cross-shaped Hall device having extensions with slits |
| CN101548158B (en) * | 2007-09-28 | 2011-07-27 | 旭化成电子材料元件株式会社 | Sensor threshold value circuit |
| JP2013130543A (en) * | 2011-12-22 | 2013-07-04 | Asahi Kasei Electronics Co Ltd | Magnetic hall sensor |
| US10338642B2 (en) * | 2016-05-20 | 2019-07-02 | Honeywell International Inc. | Hall switch with adaptive threshold |
| CN107390761B (en) * | 2017-07-31 | 2019-02-19 | 南京邮电大学 | A kind of CMOS integrated hall sensors temperature-compensation circuit |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102636761A (en) * | 2011-02-08 | 2012-08-15 | 英飞凌科技股份有限公司 | Low offset spinning current hall plate and method to operate it |
| CN208000371U (en) * | 2018-03-28 | 2018-10-23 | 中国科学院西安光学精密机械研究所 | Hall piece with threshold value adjusting function and Hall sensor |
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