CN108461615A - A kind of chip diode - Google Patents
A kind of chip diode Download PDFInfo
- Publication number
- CN108461615A CN108461615A CN201810508863.8A CN201810508863A CN108461615A CN 108461615 A CN108461615 A CN 108461615A CN 201810508863 A CN201810508863 A CN 201810508863A CN 108461615 A CN108461615 A CN 108461615A
- Authority
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- China
- Prior art keywords
- metal lead
- chip
- lead frame
- plastic casing
- chip diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 102
- 239000002184 metal Substances 0.000 claims abstract description 102
- 239000004033 plastic Substances 0.000 claims abstract description 33
- 239000000084 colloidal system Substances 0.000 claims abstract description 26
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000012856 packing Methods 0.000 claims abstract description 23
- 238000001746 injection moulding Methods 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004425 Makrolon Substances 0.000 claims description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 239000005543 nano-size silicon particle Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000006004 Quartz sand Substances 0.000 claims description 2
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- 239000003365 glass fiber Substances 0.000 claims description 2
- 230000008595 infiltration Effects 0.000 claims description 2
- 238000001764 infiltration Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000001727 in vivo Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 16
- 238000000605 extraction Methods 0.000 abstract description 5
- 230000005622 photoelectricity Effects 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000007788 roughening Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000004568 cement Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 102000000584 Calmodulin Human genes 0.000 description 1
- 108010041952 Calmodulin Proteins 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000012945 sealing adhesive Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of chip diodes, more particularly to it is a kind of for visible light/infrared/ultraviolet emission pipe, the chip diode of photoelectric receiving tube product, it includes plastic casing, chip, packing colloid, metal lead wire and at least one metal lead frame, injection molding forms the reflection groove of indent inside the plastic casing, and the chip is set to the reflection trench bottom；The packing colloid is set to above reflection groove and seals the reflection groove；The chip diode of the present invention improves light extraction efficiency and photoelectricity dress changes efficiency, solves the problems, such as to be packaged using planar configuration in the prior art and lead to poor optical properties, while can substantially reduce energy consumption.
Description
Technical field
The present invention relates to a kind of chip diodes, more particularly to one kind being used for visible light/infrared/ultraviolet emission pipe, light
The chip diode of electric reception pipe product.
Background technology
Encapsulation is to carry chip using lead frame, and the electrical connection of inside and outside is carried out using elargol or metal contact wires,
It is external to carry out protection and optical lens application using colloid.Encapsulation is necessary for semiconductor devices, plays protection and increases
The effect of photoelectric properties.
Most LED semiconductor devices is using the encapsulation of pin plug-in type and surface stuck encapsulation on the market.Pin is inserted into
Formula encapsulates：Chip is fixed on metallic support using crystal-bonding adhesive, and uses metal wire connection electrode, realizes electric function connection
Afterwards, be inserted in shaping mold cavity, inject liquid-state epoxy resin, allow after epoxy resin cure, by LED from die cavity stripping forming.
Surface stuck encapsulates：Chip is fixed on lead plate using crystal-bonding adhesive, and uses metal wire connection electrode, realizes electric breathing exercise
Can connection after, using Molding Shooting Techniques, by LED from die cavity stripping forming.Other than above-mentioned sealing adhesive process classification,
It can be divided into top light emitting form and lateral emitting form again by luminous situation.
Electronic device it is increasingly integrated, in the prior art, capsulation body of semiconductor ship product it is larger, be electrically connected effect
Difference, the pin on lead plate is in the form of a single, cannot achieve semiconductor top and shines and the two-way demand of lateral emitting, practicability
Difference.In general, encapsulation is to carry chip using holder (also known as metal lead frame), is carried out using elargol or metal contact wires
The electrical connection of inside and outside, it is external to carry out protection and optical perspective application using colloid.Encapsulate is for semiconductor product
It is necessary, play the role of protection and increases photoelectric properties.But it is all made of planar configuration in the structure of holder at present,
The effect of optical property can not further be increased.
Invention content
For overcome the deficiencies in the prior art, the purpose of the present invention is to provide a kind of chip diodes, can solve
The problem of certainly encapsulating structure of the semiconductor product of the prior art leads to poor optical properties using planar configuration.
The purpose of the present invention adopts the following technical scheme that realization：
A kind of chip diode, for the transmitting and reception of visible light/infrared/ultraviolet, including：Including plastic casing,
Chip, packing colloid, metal lead wire and at least one metal lead frame, plastic casing inside injection molding form the reflection of indent
Slot, the chip are set to the reflection trench bottom；One end of the metal lead wire is fixed on by the first metal ball on chip, separately
One end is fixed on by the second metal ball on corresponding metal lead frame；The metal lead wire and chip and metal lead frame are equal
Pass through electric connection；
The packing colloid is set to above reflection groove and seals the reflection groove；Packing colloid is by cure package in plastic casing
In body reflection groove, and the plane for protruding reflection groove forms optical lens effect from face.
The plastic casing is equipped with back-shaped groove, and each metal lead frame is installed in corresponding back-shaped groove；
At least one location hole is additionally provided on the metal lead frame, metal lead frame is fixedly mounted on plastic casing by location hole
It is interior；The moisture-proof slot of steam infiltration is additionally provided on the metal lead frame；
The chip is fixed on by the first conducting resinl on metal lead frame；
The faying face of first conducting resinl and chip and metal lead frame is set as rough surface.
Preferably, the reflection groove shape is bowl-shape, cup-shaped, ellipticity, semicircle shape, inverted trapezoidal shape, and reflection groove is set as
Bowl-shape, cup-shaped, ellipticity, semicircle shape are in favor of optical reflection.
Preferably, the metal lead frame number is 2-6.
Preferably, the metal lead frame be in " ㄈ " shape, the other end of the metal lead frame outside plastic casing,
Electric appliance is formed with application circuit to connect；By bending technique by metal lead frame in " ㄈ " shape, to be applicable in different application circuit.
Preferably, the shape of the packing colloid is that spherical, oval, trapezoidal, square, rectangle or turriform are any one
Kind.
Preferably, the packing colloid shape is including but not limited to spherical, oval, trapezoidal, square, rectangle or tower
Shape, can limit allow by optical band (may be set to 0nm~1100nm, 400nm~800nm, 760nm~1100nm,
The different-wavebands such as 850nm~1100nm), be applicable in Different Red outside/ultraviolet emission and receive apply.
The packing colloid is composed of the following components：30 parts of epoxy resin, 22 parts of makrolon, glass fibre 5 part, nanometer
6 parts of silicon carbide, 5 parts of barium sulfate, 4 parts of quartz sand, 3 parts of nano silicon dioxide, 2 parts of nano-titanium dioxide, 1-2 parts of antioxidant.
The grain size of the nano silicon dioxide is in 20nm；
The grain size of the nano-titanium dioxide is 15nm；
The grain size of the nanometer silicon carbide is 90nm；
It is raw materials used in packing colloid used in the present invention to form according to a certain percentage, under this ratio, light extraction efficiency and
It is best that photoelectricity dress changes efficiency effect；Meanwhile by introducing nano-titanium dioxide to realize that plastic casing is self-cleaning in raw material
Function, it is possible to reduce the cleaning to packing colloid surface, what silicon carbide of the present invention was selected is nanometer silicon carbide, is received by addition
The meter level SiC reinforcement wearability of packing colloid, and then extend the service life of packing colloid；
The spies such as epoxy resin used in the present invention not only has closely knit, water resistant as anticorrosion material, anti-leakage is good, intensity is high
Point, while the good craftsmanship such as there is strong adhesive force, normal-temperature operation, easy construction, and it is moderate.
Makrolon used in the present invention has good and constant electrical insulating property within the scope of wider epidemic disaster, is excellent
Good insulating materials.Meanwhile good flame retardancy and dimensional stability, makrolon are rolled over its unique high transparency, height
The features such as rate, impact, dimensional stability and easy processing are molded is penetrated, packing colloid material is highly suitable as.
Preferably, the second conducting resinl for fixing metal lead wire is coated with outside second metal ball；Described second
The face that conducting resinl is bonded with the second metal ball, metal lead wire and metal lead frame is set as rough surface.
Preferably, the plastic casing inner wall in reflection groove and the second conducting resinl junction are set as rough surface.
Preferably, the one side that the metal lead frame is bonded with plastic casing is rough surface.
Preferably, plasma cleaning is used in the link position of metal lead wire and chip, metal lead frame, makes link position
Achieve the effect that surface cleaning, surface active, keeps the connection of metal lead wire and chip, metal lead frame more secured；
Preferably, in link position in addition to the combination of metal lead wire and chip/lead frame, also increase wire and burn ball work
Metal ball dress is pressed on binding site, respectively obtains the first metal ball and the second metal ball by skill, to increase the combination of the two
Power；
Preferably, also increase spraying in addition to the combination of metal lead wire and lead frame in link position or dispensing conduction is fixed
The technique of glue, the i.e. calmodulin binding domain CaM in metal lead wire and lead frame, using injection or mode for dispensing glue, in the second metal ball surface
The second conducting resinl is coated, increases metal lead wire and is electrically connected area with lead frame, reach the binding force for increasing the two, improve electrical
The sure effect of connection.
Compared with prior art, the beneficial effects of the present invention are：
1, the groove knot of the invention by being molded by indent on the position of the fixed chip of original plane formula encapsulating structure
Chip is placed in the groove structure by structure, and it is anti-that the light that chip sends out/receives can carry out optically focused by smooth inner wall
Penetrate, efficiency changed to improve light extraction efficiency and photoelectricity dress, solve be packaged in the prior art using planar configuration and
The problem of leading to poor optical properties, while energy consumption can be substantially reduced.
2, the present invention is formed by packing colloid in the top of plastic casing reflection groove spherical, oval, trapezoidal, square
The optical lens of shape, rectangle or turriform enhances light extraction efficiency and photoelectricity on specific direction dress and changes efficiency, solves difference
Using the optical demands of design.
3, the present invention is by the way that in the metal lead frame inside plastic casing, metal lead frame is bonded with plastic casing
It is set as rough surface on one side, reinforces the binding force of the two by location hole, moisture-proof slot and back-shaped profile slot, improves this structure
Stability.By the design of " ㄈ " shape bending metal lead frame and multiple metal lead frame quantity, solves different application circuit
Connection requirement.
Description of the drawings
Fig. 1 is the overall structure figure of chip diode provided by the invention；
Fig. 2 is the left view sectional view of chip diode provided by the invention；
Fig. 3 is the vertical view of chip diode provided by the invention；
Fig. 4 is the main view sectional view of chip diode provided by the invention；
Fig. 5 is the upward view of chip diode provided by the invention；
Fig. 6 is the structural schematic diagram of chip diode encapsulating structure chips of the present invention；
Fig. 7 is another structural schematic diagram of chip diode encapsulating structure chips of the present invention；
Fig. 8 is that the second conducting resinl of chip diode of the present invention is roughened structural schematic diagram；
Fig. 9 is the plastic casing inner wall atomization roughening structural schematic diagram of chip diode of the present invention；
Figure 10 is the top light emitting and lateral emitting design sketch of chip diode of the present invention.
In figure：1, reflection groove；2, plastic casing；3, metal lead frame；4, location hole；5, chip；6, moisture-proof slot；7, it encapsulates
Colloid, the first metal ball 8, metal lead wire 9, the second metal ball 10, the first conducting resinl 11, the second conducting resinl 12, back-shaped groove 13.
Specific implementation mode
In the following, in conjunction with attached drawing 1-10 and specific implementation mode, the present invention is described further, it should be noted that
Under the premise of not colliding, it can be formed in any combination between various embodiments described below or between each technical characteristic new
Embodiment.
Embodiment
If Fig. 1-6 is the plane formula envelope in existing semiconductor product the present invention provides a kind of chip diode
It is improved on assembling structure.In other words, on the position that original plane formula encapsulating structure-encapsulating housing 2 fixes light emitting source
It is molded the reflection groove 1 of indent, chip is placed on 1 bottom of reflection groove, the light that such chip sends out/receives can be by smooth
Reflection groove 1 inner wall carry out light gathering reflector reduce energy consumption to improve light extraction efficiency and photoelectric conversion efficiency.Namely
It is to say, in the reflection groove 1 of an indent of plastic casing 2, is used for chip placement 5.Here chip 5 can be visible light/red
The devices such as outside/ultraviolet emission chip, photoelectric receiving diode, IC.In addition, the reflection groove 1 be such as bowl-shape, cup-shaped, ellipticity,
Semicircle shape, in other words, as long as the inner wall of the reflection groove 1, which is smooth structure, realizes light gathering reflector, to improve out
Light efficiency and photoelectric conversion efficiency, and then improve optical characteristics.Wherein plastic casing 2 is generally using plastic cement materials such as PLCC or PCB
Matter.
In addition, in actual process, after reflection groove 1 is processed by precision equipment, the position of light emitting source is fixed
Can be more accurate than the design of primary plane formula, it can be improved 15% with 7 optical centre consistency of packing colloid.
In addition, the invention also includes at least one metal lead frames 3 and corresponding metal lead wire 9.The metal lead wire 9
One end is fixed on by the first metal ball 8 on chip 5, and the other end is fixed on corresponding metal lead wire by the second metal ball 10
On frame 3；The metal lead wire 9 passes through electric connection with chip 5 and metal lead frame 3；
Back-shaped groove 13 is equipped in plastic casing 2, each metal lead frame 3 is each attached in corresponding back-shaped groove 13,
In other words metal lead frame 3 uses back-shaped profile, can increase the binding force between metal lead frame 3 and encapsulating housing 2.
In addition, the one side that is bonded with plastic casing 2 of metal lead frame 3 of the present invention is rough surface, by will be with plastic cement
The one side (back side) for the metal lead frame 3 that shell 2 is bonded does roughening treatment, if figure is roughened, rough surface is obtained, to increase metal
Heat-resisting/cold ability and binding force of lead frame 3 and plastic casing 2.Roughening treatment in the present invention refers in process
Metal lead frame 3 is set as rough surface on one side, rather than shiny surface.
In addition, being additionally provided at least one location hole 4 on metal lead frame 3, by metal lead frame 3 and moulded by location hole 4
Glue shell 2 is fixedly connected.Moisture-proof slot 6 is additionally provided on metal lead frame 3, when thering is steam to ooze on metal lead frame 3 or plastic casing 2
When saturating, steam can be blocked by the moisture-proof slot 6, prevent metal lead frame 3 from making moist with reflection groove 1.
As shown in figure 8, chip 5 of the present invention is fixed on by the first conducting resinl 11 on metal lead frame 3, in point first
Conducting resinl 11 position (such as：3 position of fixed chip 5 and metal lead frame) on do roughening treatment, to increase by the first conducting resinl
11 and chip 5 and metal lead frame 3 binding ability；It is coated with outside second metal ball 10 for fixing metal lead wire 9
The second conducting resinl 12；Put the second conducting resinl 12 position (such as：The second metal ball and metal are fixed in fixed chip position
Wire locations) on do roughening treatment, with increase the second conducting resinl 12 and metal lead frame 3 binding ability.Meanwhile such as Fig. 9 institutes
Show, roughening treatment is done in the surface of 12 junction of 2 inner wall of plastic casing and the second conducting resinl in reflection groove 1 by the present invention, to increase
Add the binding force between 2 inner wall of the second conductive rubber 12 and plastic casing.
In addition, packing colloid 7 of the present invention is set to 1 top of reflection groove and seals the reflection groove 1；Packing colloid 7 passes through solidification
It is packaged in 2 reflection groove 1 of plastic casing, and the plane for protruding reflection groove 1 forms optical lens effect from face；The packing colloid
7 be epoxy resin/silicones class light-transmitting materials, and packing colloid 7 plays optical lens using epoxy resin/silicones class light-transmitting materials
Mirror acts on；Including but not limited to spherical, oval, trapezoidal, square, rectangle or turriform, can limit allows to lead to its shape
It crosses optical band and (may be set to the different waves such as 0nm~1100nm, 400nm~800nm, 760nm~1100nm, 850nm~1100nm
Section), be applicable in Different Red outside/ultraviolet emission and receive apply.
In addition, the metal lead frame 3 employed in the present invention is at least one, attachable electrical pin increases, and optimizes
The compatibility of this holder improves the reliability that user uses pcb board to weld, significantly facilitates the compatibility of subscriber's line circuit design.
By bending technique by metal lead frame 3 in " ㄈ " shape, to meet the connection requirement of different application circuit.In actual use
In the process, by the way that the pin of the metal lead frame 3 of each stamp-mounting-paper diode to be welded on pcb board.
The volume of volume vs' pin plug-in type packaging of device of the present invention, about reduces 3 times to 14 times relatively.With
Family can integrate more devices on identical circuit, and the finished-product volume smaller of terminal user, experience sense is more preferably；
Comparison surface stuck encapsulation uses pcb board as support, and the reflective material that the present invention uses has physics
Chemical characteristic is stablized, and price has a clear superiority, and has good protective effect to semiconductor chip；
Compare it is traditional encapsulation be only capable of single side shine, the bilateral lead foot of reasonable employment of the present invention efficiently uses the structure of device,
The application effect for reaching compatible top light emitting and lateral emitting from face, as shown in 10.
The above embodiment is only the preferred embodiment of the present invention, and the scope of protection of the present invention is not limited thereto,
The variation and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed range.
Claims (10)
1. a kind of chip diode, transmitting and reception for visible light/infrared/ultraviolet, which is characterized in that including：Including
Plastic casing, chip, packing colloid, metal lead wire and at least one metal lead frame,
Injection molding forms the reflection groove of indent inside the plastic casing, and the chip is set to the reflection trench bottom；
One end of the metal lead wire is fixed on by the first metal ball on chip, and the other end is fixed on by the second metal ball
On corresponding metal lead frame；The metal lead wire passes through electric connection with chip and metal lead frame；
The packing colloid is set to above reflection groove and seals the reflection groove；
The plastic casing is equipped with back-shaped groove, and each metal lead frame is installed in corresponding back-shaped groove；
At least one location hole is additionally provided on the metal lead frame, metal lead frame is fixedly mounted on plastic casing by location hole
In vivo；The moisture-proof slot of steam infiltration is additionally provided on the metal lead frame；
The chip is fixed on by the first conducting resinl on metal lead frame；
The faying face of first conducting resinl and chip and metal lead frame is set as rough surface.
2. chip diode as described in claim 1, it is characterised in that：The reflection groove shape is bowl-shape, cup-shaped, ellipse
Shape, semicircle shape, inverted trapezoidal shape.
3. chip diode as described in claim 1, it is characterised in that：The metal lead frame number is 2-6.
4. chip diode as described in claim 1, it is characterised in that：The metal lead frame is in " ㄈ " shape, described
The other end of metal lead frame forms electric appliance outside plastic casing, with application circuit and connect.
5. chip diode as described in claim 1, it is characterised in that：The shape of the packing colloid is spherical, oval
Shape, trapezoidal, square, rectangle or turriform any one.
6. chip diode as described in any one in claim 1-5, it is characterised in that：The chip passes through the first conducting resinl
It is fixed on metal lead frame.
7. chip diode as described in any one in claim 1-5, it is characterised in that：It is also coated outside second gold goal
It is useful for the second conducting resinl of fixed metal lead wire.
8. chip diode as described in any one in claim 1-5, it is characterised in that：The metal lead frame and plastic casing
It is rough surface to show consideration for the one side closed.
9. chip diode as described in claim 1, it is characterised in that：The packing colloid is composed of the following components：Ring
30 parts of oxygen resin, 22 parts of makrolon, 5 parts of glass fibre, 6 parts of nanometer silicon carbide, 5 parts of barium sulfate, 4 part, nanometer two of quartz sand
3 parts of silica, 2 parts of nano-titanium dioxide, 1-2 parts of antioxidant.
10. chip diode as claimed in claim 9, it is characterised in that：The grain size of the nano silicon dioxide is in 20nm；
The grain size of the nano-titanium dioxide is 15nm；The grain size of the nanometer silicon carbide is 90nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810508863.8A CN108461615B (en) | 2018-05-24 | 2018-05-24 | Patch type diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810508863.8A CN108461615B (en) | 2018-05-24 | 2018-05-24 | Patch type diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108461615A true CN108461615A (en) | 2018-08-28 |
| CN108461615B CN108461615B (en) | 2024-01-26 |
Family
ID=63215543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810508863.8A Active CN108461615B (en) | 2018-05-24 | 2018-05-24 | Patch type diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108461615B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390457A (en) * | 2018-09-10 | 2019-02-26 | 天津大学 | Automatically cleaning LED encapsulation coating and preparation method thereof |
| CN109535612A (en) * | 2018-12-06 | 2019-03-29 | 南阳医学高等专科学校 | A kind of computer chip encapsulation material and preparation method thereof |
| CN110931623A (en) * | 2019-12-19 | 2020-03-27 | 福建省信达光电科技有限公司 | Surface mount type infrared transmitting tube and manufacturing process thereof |
| CN111106220A (en) * | 2018-10-25 | 2020-05-05 | 一诠精密电子工业(中国)有限公司 | Optical module bearing seat |
| CN112467010A (en) * | 2020-11-13 | 2021-03-09 | 中山市聚明星电子有限公司 | Diode packaging process and packaged diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390457A (en) * | 2018-09-10 | 2019-02-26 | 天津大学 | Automatically cleaning LED encapsulation coating and preparation method thereof |
| CN111106220A (en) * | 2018-10-25 | 2020-05-05 | 一诠精密电子工业(中国)有限公司 | Optical module bearing seat |
| CN109535612A (en) * | 2018-12-06 | 2019-03-29 | 南阳医学高等专科学校 | A kind of computer chip encapsulation material and preparation method thereof |
| CN110931623A (en) * | 2019-12-19 | 2020-03-27 | 福建省信达光电科技有限公司 | Surface mount type infrared transmitting tube and manufacturing process thereof |
| CN112467010A (en) * | 2020-11-13 | 2021-03-09 | 中山市聚明星电子有限公司 | Diode packaging process and packaged diode |
| CN112467010B (en) * | 2020-11-13 | 2022-03-22 | 中山市聚明星电子有限公司 | Diode packaging process and packaged diode |
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