CN108231877B - Method for preparing ohmic contact of gallium nitride electronic device - Google Patents
Method for preparing ohmic contact of gallium nitride electronic device Download PDFInfo
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- CN108231877B CN108231877B CN201711287917.4A CN201711287917A CN108231877B CN 108231877 B CN108231877 B CN 108231877B CN 201711287917 A CN201711287917 A CN 201711287917A CN 108231877 B CN108231877 B CN 108231877B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000010936 titanium Substances 0.000 claims abstract description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000035484 reaction time Effects 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 3
- 230000000977 initiatory effect Effects 0.000 claims abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
- H01L29/454—Ohmic electrodes on AIII-BV compounds on thin film AIII-BV compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a preparation method of ohmic contact of a gallium nitride electronic device, which comprises the steps of scanning a titanium-containing metal electrode by laser in a nitrogen atmosphere, and initiating a chemical reaction between the titanium-containing metal electrode and nitrogen by the laser to form titanium nitride ohmic contact; the total chemical reaction time per unit area of the titanium-containing metal electrode is less than 0.01 s. The ohmic contact obtained by the invention has small contact resistance and short reaction time, and the electrical property of the GaN film material is not influenced. The invention is a rapid ohmic contact preparation method of a gallium nitride device, and has important significance for realizing a high-performance gallium nitride electronic device and simultaneously improving the production efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of ohmic contact of a gallium nitride electronic device.
Background
Gallium nitride (GaN) materials have a larger forbidden bandwidth than silicon (Si). Meanwhile, the GaN heterojunction has high electron mobility and electron gas density. Therefore, GaN materials are widely used in the field of electronic devices or optoelectronic devices such as High Electron Mobility Transistors (HEMTs), LEDs, and photo-detectors.
The ohmic contact technology is one of the key technologies for realizing high-performance GaN devices. The method for preparing the ohmic contact, the shape and the performance of the material directly influence the total conductance and the total output power of the device. An ideal ohmic contact preparation method should meet the following requirement 1. negligible contact resistance. 2. The preparation process does not affect the electrical property of the film. Meanwhile, the rapid preparation process is beneficial to improving the production efficiency in large-area production.
Taking GaN HEMT as an example, the standard preparation method widely adopted is rapid high temperature annealing. A Ti/Al/Ni/Au multilayer metal structure is adopted, metal is deposited on the surface of a semiconductor in an evaporation or sputtering mode, and then high-temperature annealing is carried out for 30-180 s in a rapid annealing furnace at 800-900 ℃, so that ohmic contact is formed. The GaN HEMT ohmic contact formed by the method has the contact resistance reaching 1 omega mm or even lower. However, the method has the following defects: the GaN HEMT rises in sheet resistance after annealing. Studies have shown that annealing at high temperatures of 800 ℃ causes irreversible damage to AlGaN/GaN heterojunctions, (K.Shiojima et al. the Japanese Society of Applied Physics, Vol.43, pp.100-105,2004).
In addition to the rapid high temperature annealing method, the methods of ohmic contact of GaN HEMT have been reported to include microwave heating and laser activation of doping ions.
The microwave heating method realizes high-temperature annealing through a mechanism that the metal electrode and the AlGaN/GaN heterojunction absorb microwave energy. Although the GaN HEMT ohmic contact formed by the method has low contact resistance, the sheet resistance of the film still rises obviously after microwave heating.
The laser activation doping ion method mainly utilizes a mechanism that ultraviolet laser pulses irradiate GaN materials so as to activate Si ions injected into GaN to realize ohmic contact. Compared with the standard rapid high-temperature annealing, the method not only increases two steps of Si ion implantation and laser activation, but also needs a plurality of steps of photoetching, photoresist removal and the like, thereby obviously increasing the number of the steps of the overall process. In addition, the ultraviolet laser pulse can damage the GaN material which is not implanted with Si ions, thereby generating negative influence on the sheet resistance of the film.
In summary, in view of the shortcomings of the existing methods for preparing ohmic contact of GaN devices, which reduces the performance of the devices, it is necessary to invent a method for making the electrode material have not only lower contact resistance but also no reduction in the electrical performance of the GaN thin film after forming ohmic contact. Meanwhile, the method has simple steps and short preparation time.
Disclosure of Invention
In order to overcome the above disadvantages and shortcomings of the prior art, the present invention is directed to a method for preparing an ohmic contact of a gallium nitride electronic device, which can realize an ohmic contact with good performance in a very short time.
The purpose of the invention is realized by the following technical scheme:
in the preparation method of ohmic contact of the gallium nitride electronic device, a titanium-containing metal electrode is scanned by laser under the nitrogen atmosphere, and the titanium nitride ohmic contact is formed by the chemical reaction of the titanium-containing metal electrode and nitrogen initiated by the laser; the total chemical reaction time per unit area of the titanium-containing metal electrode is less than 0.01 s.
The laser power density is 1 × 108～1×1011W/m2The scanning speed of the light beam is 1-1000 mm/s.
The scan is a single scan.
The titanium-containing metal electrode comprises a titanium metal layer and an anti-oxidation layer.
The thickness of the titanium metal layer is 1 nm-100 nm.
The anti-oxidation layer is a gold layer or a platinum layer.
The thickness of the anti-oxidation layer is 5 nm-100 nm.
The principle of the invention is as follows:
the invention is a high-precision selective preparation method, and laser can be focused to 1 micron or even smaller, and only irradiates on a metal electrode, but not on a GaN film. Therefore, the invention does not affect the electrical properties of the GaN thin film. Secondly, the invention is a method for rapidly forming low contact resistance. The laser leads to a local high-temperature environment in a very short time, on one hand, a large number of vacancies are formed on the surface of the GaN to improve the carrier concentration, and on the other hand, the chemical reaction of titanium and nitrogen is initiated to form a low-resistance titanium nitride layer. In this fabrication, the titanium-containing metal layer swept by the laser chemically reacts to convert it into a titanium nitride electrode of low contact resistance.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the preparation method of the invention does not affect the electrical property of the GaN film, has lower contact resistance, and has simple steps and shorter preparation time. The invention can improve the total conductance and the total output power of the GaN electronic device and the photoelectric device, and has important significance for realizing the high-performance GaN device and improving the production efficiency.
Drawings
FIG. 1 is a graph of current-voltage measurements between two metal electrodes prior to a laser-induced chemical reaction in accordance with an embodiment of the present invention.
Fig. 2 is a schematic diagram of a method for forming an ohmic contact by laser induced chemical reaction according to an embodiment of the present invention.
Fig. 3 is an electron microscope photograph of the surface of a metal electrode after a laser induced chemical reaction in accordance with an embodiment of the present invention.
FIG. 4 is a graph of current-voltage measurements between two metal electrodes after a laser-induced chemical reaction in accordance with an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Examples
The method for preparing the ohmic contact of the gallium nitride electronic device of the embodiment comprises the following steps:
(1) defining the structural shape of a metal electrode on the GaN HEMT heterojunction material by adopting a photoetching method;
(2) depositing a metal electrode material, namely depositing a Ti metal layer with the thickness of 20nm and an Au metal layer with the thickness of 20nm in sequence by adopting an electron beam evaporation method;
(3) the device sample with the metal electrode was placed in acetone for sonication to form the metal electrode. The current-voltage test curve between the two metal electrodes after this step is shown in fig. 1, the current value is in the μ a scale, and the curve shows that the metal electrodes are schottky-contacts before the laser-induced chemical reaction.
(4) Laser induced chemical reaction: as shown in fig. 2, a device sample with a metal electrode (comprising a substrate material 5, a GaN HEMT heterojunction 4, a titanium-containing metal electrode 3, nitrogen gas 2 and laser 1 in sequence from bottom to top) is placed on a sample table made of copper, and a continuous laser with a wavelength of 532nm is aligned with the metal electrode to initiate a chemical reaction, wherein the reaction gas is nitrogen. The laser power was 3W, the beam diameter was 5 μm, the scanning speed was 2mm/s, and the number of passes was 1. Under such conditions, the total chemical reaction time per unit area of the metal electrode is less than 0.01 s. Fig. 3 is an electron microscope photograph of the surface of the metal electrode after the laser induced chemical reaction. The effect of the visible laser is limited to about 5 μm wide of the electrode material, i.e. it does not affect the sheet resistance of the GaN film outside the electrode. The current-voltage test curve between the two metal electrodes is shown in fig. 4. The current values are in the mA level, and the curves show that the metal electrode is in ohmic contact after laser-induced chemical reaction. The contact resistance is less than 1 omega mm after being measured and calculated by a TLM method.
The above-mentioned embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above-mentioned embodiments, for example, the oxidation preventing layer may be a platinum layer, and any other changes, modifications, substitutions, combinations, simplifications which do not depart from the spirit and principle of the present invention should be regarded as equivalent substitutions, which are included in the protection scope of the present invention.
Claims (4)
1. The preparation method of ohmic contact of gallium nitride electronic device is characterized in that the ohmic contact obtained by the preparation method has small contact resistance and short reaction time, and can not affect the electrical property of GaN film, and comprises the following steps:
under the nitrogen atmosphere, the continuous wavelength is 532nm, and the laser power density is 1 multiplied by 108～1×1011W/m2Scanning a titanium-containing metal electrode by laser with the beam scanning speed of 1-1000 mm/s, initiating a chemical reaction between the titanium-containing metal electrode and nitrogen by the laser to form titanium nitride ohmic contact, and converting the titanium-containing metal layer scanned by the laser into a titanium nitride electrode with low contact resistance by the chemical reaction; the total chemical reaction time of the titanium-containing metal electrode in unit area is less than 0.01 s; the titanium-containing metal electrode comprises a titanium metal layer and an anti-oxidation layer, wherein the anti-oxidation layer is a gold layer or a platinum layer;
the laser is only irradiated on the metal electrode and does not irradiate on the GaN film;
the formation of a large number of vacancies at the GaN surface increases the carrier concentration.
2. The method of claim 1, wherein the scanning is a single scan.
3. The method according to claim 1, wherein the titanium metal layer has a thickness of 1nm to 100 nm.
4. The method of claim 1, wherein the oxidation protection layer has a thickness of 5nm to 100 nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711287917.4A CN108231877B (en) | 2017-12-07 | 2017-12-07 | Method for preparing ohmic contact of gallium nitride electronic device |
| PCT/CN2018/111613 WO2019109747A1 (en) | 2017-12-07 | 2018-10-24 | Ohmic contact preparation method for gallium nitride electronic device |
| SG11202004639YA SG11202004639YA (en) | 2017-12-07 | 2018-10-24 | Method for Preparing an Ohmic Contact of a Gallium Nitride Electronic Device |
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| CN101303978A (en) * | 2008-07-04 | 2008-11-12 | 西安电子科技大学 | Preparation method for gallium nitride device N type Ohm contact |
| CN101908591A (en) * | 2010-06-23 | 2010-12-08 | 山东华光光电子有限公司 | Preparation method for ohmic contact electrode for LED with SiC substrate |
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| US6204560B1 (en) * | 1998-04-20 | 2001-03-20 | Uniphase Laser Enterprise Ag | Titanium nitride diffusion barrier for use in non-silicon technologies and method |
| JP5305658B2 (en) * | 2004-11-24 | 2013-10-02 | ナノシス・インク． | Method for activating dopant ions implanted in nanowires |
| US8049104B2 (en) * | 2009-09-30 | 2011-11-01 | Twin Creek Technologies, Inc. | Intermetal stack for use in a photovoltaic cell |
| CN101937952A (en) * | 2010-09-06 | 2011-01-05 | 厦门市三安光电科技有限公司 | Manufacturing method for film gallium nitride-based light-emitting diode |
| US8975615B2 (en) * | 2010-11-09 | 2015-03-10 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material |
| TWI441303B (en) * | 2011-06-10 | 2014-06-11 | Univ Nat Chiao Tung | Semiconductor device apply to copper plating process |
| US8896066B2 (en) * | 2011-12-20 | 2014-11-25 | Intel Corporation | Tin doped III-V material contacts |
| CN102832238A (en) * | 2012-09-17 | 2012-12-19 | 东莞市天域半导体科技有限公司 | Silicon carbide device with ohmic contact protection layer and production method of silicon carbide device |
| JP2014063948A (en) * | 2012-09-24 | 2014-04-10 | Sumitomo Electric Ind Ltd | Silicon carbide semiconductor device manufacturing method |
| CN107393962A (en) * | 2017-06-23 | 2017-11-24 | 深圳市晶相技术有限公司 | Gallium nitride semiconductor device and preparation method thereof |
| CN108231877B (en) * | 2017-12-07 | 2022-05-24 | 华南理工大学 | Method for preparing ohmic contact of gallium nitride electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101303978A (en) * | 2008-07-04 | 2008-11-12 | 西安电子科技大学 | Preparation method for gallium nitride device N type Ohm contact |
| CN101908591A (en) * | 2010-06-23 | 2010-12-08 | 山东华光光电子有限公司 | Preparation method for ohmic contact electrode for LED with SiC substrate |
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| SG11202004639YA (en) | 2020-06-29 |
| CN108231877A (en) | 2018-06-29 |
| WO2019109747A1 (en) | 2019-06-13 |
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