CN107731435A - A kind of preparation method of zinc oxide varistor - Google Patents
A kind of preparation method of zinc oxide varistor Download PDFInfo
- Publication number
- CN107731435A CN107731435A CN201710880831.6A CN201710880831A CN107731435A CN 107731435 A CN107731435 A CN 107731435A CN 201710880831 A CN201710880831 A CN 201710880831A CN 107731435 A CN107731435 A CN 107731435A
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- Prior art keywords
- ceramic substrate
- blue film
- ceramic
- based varistor
- chip
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of preparation method of zinc oxide varistor, and ceramic substrate is made using press ceramic sintering process；One layer of mask plate is covered on the surface of ceramic substrate, metalized is carried out to ceramic substrate, the electrode district on ceramic substrate two sides forms metal electrode；The ceramic substrate for having sputtered metal electrode is adhered on blue film, cut using cutting area of the emery wheel dicing technique on ceramic substrate, by ceramic substrate cutting into many independent based varistor chips, based varistor chip proper alignment is adhered on blue film, by with based varistor chip blue film assemble in automatic die Bonder carry out automatically dropping glue, on core, sintering；Plastic packaging, solidification, rib cutting are carried out to the based varistor chip assembled, ultimately form many piezoresistors.Be integrally formed, metallized using big ceramic substrate, blue film is pasted, cutting technique, overcome the problem of small size based varistor chip production difficulty is big, efficiency is low；Using automatic bonding die technique, encapsulation production efficiency improves.
Description
Technical field
The present invention relates to a kind of preparation method of zinc oxide varistor.
Background technology
The preparation method of traditional piezoresistor：1. on powder press using one-shot or it is much more continuous rush by the way of by
Mould suppresses many independent based varistor chips；2. many independent based varistor chips are shaken by hand
Dynamic lay flat on one's back is fitted into shaking tray positioning hole, then shaking tray lid is covered above shaking tray；3. the shaking tray assembled is put into sputtering equipment
In sputtered, sputter layer of metal electrodes in many independent based varistor chip surfaces；4. using dispensing, on
Core, sintering stepped process carry out based varistor chip and assembled；6. the based varistor chip assembled is carried out
Plastic packaging, solidification, rib cutting, ultimately form many piezoresistors.
This method has the disadvantage that：
1）One-shot or the process efficiency comparison of continuous more punchings are low；
2）Chip is fitted into the operating process of shaking tray, acted better than using shake, between chip and chip and chip is with shaking
Shock, friction etc. can be produced between disk, chip can be caused damaged；
3）When chip size is smaller, the phenomenon that chip can not position is occurred using shaking tray fixed chip, segment chip is shaking
Upright state occurs in disk positioning hole, it is necessary to manually adjust, the difficulty of realization is very big, and efficiency is extremely low；
4）When needing independent sale based varistor chip to the processing of encapsulation factory, it is necessary to which chip is taken out from shaking tray, by
Chip is assembled in shaking tray by encapsulation process factory again, is increased the duplication of labour, low production efficiency, secondary damage can be produced to chip.
Accordingly, it is desirable to provide a kind of new technical scheme solves the above problems.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of preparation method of zinc oxide varistor.
In order to solve the above technical problems, a kind of preparation method of zinc oxide varistor of the present invention, including following step
Suddenly：
（1）Ceramic substrate is made with press ceramic sintering process first；
（2）One layer of mask plate is covered in ceramic substrate one side, mask plate is hollow type structure, hollow type structure size and ceramic base
Plate surface metallized area fits like a glove；
（3）The ceramic substrate of mask film covering plate is put into sputtering unit or evaporator and treats metallized area and carries out at metallization
Reason, the electrode district on ceramic substrate two sides form metal electrode；
（4）According to step 2）、3）Same technological process carries out metalized to the another side of ceramic substrate；
（5）Ceramic substrate after metallization is adhered on blue film；
（6）The ceramic substrate pasted on blue film is used into emery wheel cutting-up technique, cut into according to line of cut neat regularly arranged
Many be adhered on blue film independent based varistor chips；
（7）By with based varistor chip blue film assemble in automatic die Bonder carry out automatically dropping glue, on core, sintering；
（8）Plastic packaging, solidification, rib cutting are carried out to the based varistor chip assembled, ultimately form many piezoresistors.
The region to metalization of the ceramic substrate is flat shape, projection shape or groove shapes.
Above-mentioned ceramic substrate is circular or square.
Beneficial effects of the present invention：1）Realize the high-volume life that large substrates ceramics cut to based varistor chip
Production, it is more efficient；2）Be integrally formed, metallized using big ceramic substrate, blue film is pasted, cutting technique, overcome small size pressure
The problem of quick resistor ceramic chip production difficulty is big, efficiency is low, while also solve damage of the shaking tray operation to chip；3）Using
Automatic bonding die technique, encapsulation production efficiency improve.
Brief description of the drawings
Fig. 1 a are that ceramic substrate when ceramic substrate of the present invention region to metalization is groove shapes or projection shape is overlooked
Figure.
Fig. 1 b are ceramic substrate top view when ceramic substrate of the present invention region to metalization is flat shape.
Fig. 1 c are ceramic substrate of the present invention region to metalization when being groove shapes, projection shape or flat shape, mask
Plate is covered in the top view on ceramic substrate.
Fig. 1 d are ceramics when ceramic substrate of the present invention region to metalization is groove shapes, projection shape or flat shape
The top view of substrate metal.
Fig. 1 e are the top view of mask plate of the present invention.
Fig. 2 a are ceramic substrate sectional drawing when ceramic substrate of the present invention region to metalization is groove shapes.
Fig. 2 b are ceramic substrate of the present invention region to metalization when being groove shapes, and mask plate is covered on ceramic substrate
Structural representation.
Fig. 2 c are the signal after ceramic substrate metallization when ceramic substrate of the present invention region to metalization is groove shapes
Figure.
Fig. 2 d are ceramic substrate of the present invention region to metalization when being groove shapes, the based varistor core being finally molded
Chip architecture schematic diagram.
Fig. 3 a are ceramic substrate sectional drawing when ceramic substrate of the present invention region to metalization is projection shape.
Fig. 3 b are ceramic substrate of the present invention region to metalization when being projection shape, and mask plate is covered on ceramic substrate
Structural representation.
Fig. 3 c are the signal after ceramic substrate metallization when ceramic substrate of the present invention region to metalization is projection shape
Figure.
Fig. 3 d are ceramic substrate of the present invention region to metalization when being projection shape, the based varistor core being finally molded
Chip architecture schematic diagram.
Fig. 4 a are ceramic substrate structure schematic diagram when ceramic substrate of the present invention region to metalization is flat shape.
Fig. 4 b are ceramic substrate of the present invention region to metalization when being flat shape, and mask plate is covered on ceramic substrate
Structural representation.
Fig. 4 c are ceramic substrate metallization structure signal when ceramic substrate of the present invention region to metalization is flat shape
Figure.
Fig. 4 d are ceramic substrate of the present invention region to metalization when being flat shape, the based varistor core being finally molded
Chip architecture schematic diagram.
Wherein：1st, ceramic substrate, 2, mask plate, 3, metal level, 4, based varistor chip.Dotted line is cutting in figure
Line.
Embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment and accompanying drawing, the invention will be further described, should
Embodiment is only used for explaining the present invention, does not form the restriction to protection scope of the present invention.
As shown in Fig. 1 a, Fig. 1 b, Fig. 1 c, Fig. 1 d, Fig. 1 e, a kind of making side of zinc oxide varistor of the invention
Method,
（1）Ceramic substrate 1 is made with press ceramic sintering process first；
（2）One layer of mask plate 2 is covered in ceramic substrate one side, mask plate 2 is hollow type structure, hollow type structure size and ceramics
Substrate surface metallized area fits like a glove；
（3）The ceramic substrate of mask film covering plate is put into sputtering unit or evaporator and treats metallized area and carries out at metallization
Reason, the electrode district on ceramic substrate two sides form metal electrode；
（4）According to step 2）、3）Same technological process carries out metalized to the another side of ceramic substrate；
（5）Ceramic substrate after metallization is adhered on blue film；
（6）The ceramic substrate pasted on blue film is used into emery wheel cutting-up technique, cut into according to line of cut neat regularly arranged
Many be adhered on blue film independent based varistor chips；
（7）By with based varistor chip blue film assemble in automatic die Bonder carry out automatically dropping glue, on core, sintering；
（8）Plastic packaging, solidification, rib cutting are carried out to the based varistor chip assembled, ultimately form many piezoresistors.
Shown in Fig. 2 a, 1 region to metalization of ceramic substrate is groove shapes, Fig. 2 b, mask plate 2 then is covered in into ceramics
On substrate 1, Fig. 2 c, ceramic substrate region to metalization being subjected to metallization process, diagonal line hatches position is metal level 3, Fig. 2 d,
It is last to cut into many independent based varistor chips 4 according to line of cut.
Shown in Fig. 3 a, 1 region to metalization of ceramic substrate is projection shape, Fig. 3 b, mask plate 2 then is covered in into ceramics
On substrate 1, Fig. 3 c, ceramic substrate region to metalization being subjected to metallization process, diagonal line hatches position is metal level 3, Fig. 3 d,
It is last to cut into many independent based varistor chips 4 according to line of cut.
Shown in Fig. 4 a, 1 region to metalization of ceramic substrate is flat shape, Fig. 4 b, mask plate 2 then is covered in into ceramics
On substrate 1, Fig. 4 c, ceramic substrate region to metalization being subjected to metallization process, diagonal line hatches position is metal level 3, Fig. 4 d,
It is last to cut into many independent based varistor chips 4 according to line of cut.
Ceramic substrate 1 is circular piece or square.This piezo-resistance made of semiconductor precision processing technology
Device ceramic chip dimensional accuracy is high.
Chip of pressure sensitive resistor and silicon semiconductor device epoxy resin plastics injection molding packaging manufacturing process are utilized simultaneously,
Surface installing type piezoresistor is encapsulated into, high-volume, automatic continuous production can be achieved.The surface of encapsulation is installed by pressure-sensitive electricity
Hinder with small volume, the response time is fast, 125 DEG C high temperature is exhausted without drop volume, high surge and multiple-pulse disposal ability, high-air-tightness, height
The advantages such as edge.
Claims (3)
1. a kind of preparation method of zinc oxide varistor, it is characterised in that comprise the following steps：
（1）Ceramic substrate is made with press ceramic sintering process first；
（2）One layer of mask plate is covered in ceramic substrate one side, mask plate is hollow type structure, hollow type structure size and ceramic base
Plate surface metallized area fits like a glove；
（3）The ceramic substrate of mask film covering plate is put into sputtering unit or evaporator and treats metallized area and carries out at metallization
Reason, the electrode district on ceramic substrate two sides form metal electrode；
（4）According to step 2）、3）Same technological process carries out metalized to the another side of ceramic substrate；
（5）Ceramic substrate after metallization is adhered on blue film；
（6）The ceramic substrate pasted on blue film is used into emery wheel cutting-up technique, cut into according to line of cut neat regularly arranged
Many be adhered on blue film independent based varistor chips；
（7）By with based varistor chip blue film assemble in automatic die Bonder carry out automatically dropping glue, on core, sintering；
（8）Plastic packaging, solidification, rib cutting are carried out to the based varistor chip assembled, ultimately form many piezoresistors.
A kind of 2. preparation method of zinc oxide varistor according to claim 1, it is characterised in that：The ceramic base
The region to metalization of plate is flat shape, projection shape or groove shapes.
A kind of 3. preparation method of zinc oxide varistor according to claim 1, it is characterised in that：The ceramic base
Plate is circular or square.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710880831.6A CN107731435A (en) | 2017-09-26 | 2017-09-26 | A kind of preparation method of zinc oxide varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710880831.6A CN107731435A (en) | 2017-09-26 | 2017-09-26 | A kind of preparation method of zinc oxide varistor |
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| Publication Number | Publication Date |
|---|---|
| CN107731435A true CN107731435A (en) | 2018-02-23 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710880831.6A Pending CN107731435A (en) | 2017-09-26 | 2017-09-26 | A kind of preparation method of zinc oxide varistor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109674094A (en) * | 2019-01-26 | 2019-04-26 | 深圳市合元科技有限公司 | Electronic smoke atomizer and electronic cigarette, atomizing component preparation method |
| CN111755186A (en) * | 2020-07-06 | 2020-10-09 | 太仓毅峰电子有限公司 | Production method of chip resistor granules |
| CN112071542A (en) * | 2020-08-20 | 2020-12-11 | 苏州达晶半导体有限公司 | Manufacturing method of PPTC surface electrode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5896081A (en) * | 1997-06-10 | 1999-04-20 | Cyntec Company | Resistance temperature detector (RTD) formed with a surface-mount-device (SMD) structure |
| CN105185724A (en) * | 2014-05-30 | 2015-12-23 | 无锡华润安盛科技有限公司 | Cushion block and machine for mounting technology of flip chip, and method for upside-down mounting of chip |
| CN106782953A (en) * | 2017-02-09 | 2017-05-31 | 昆山万丰电子有限公司 | A kind of piezoresistor and manufacturing process |
| CN106935397A (en) * | 2015-12-31 | 2017-07-07 | 昆山萬豐電子有限公司 | A kind of manufacture method of single-layer ceramic capacitor or individual layer piezoresistor |
-
2017
- 2017-09-26 CN CN201710880831.6A patent/CN107731435A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5896081A (en) * | 1997-06-10 | 1999-04-20 | Cyntec Company | Resistance temperature detector (RTD) formed with a surface-mount-device (SMD) structure |
| CN105185724A (en) * | 2014-05-30 | 2015-12-23 | 无锡华润安盛科技有限公司 | Cushion block and machine for mounting technology of flip chip, and method for upside-down mounting of chip |
| CN106935397A (en) * | 2015-12-31 | 2017-07-07 | 昆山萬豐電子有限公司 | A kind of manufacture method of single-layer ceramic capacitor or individual layer piezoresistor |
| CN106782953A (en) * | 2017-02-09 | 2017-05-31 | 昆山万丰电子有限公司 | A kind of piezoresistor and manufacturing process |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109674094A (en) * | 2019-01-26 | 2019-04-26 | 深圳市合元科技有限公司 | Electronic smoke atomizer and electronic cigarette, atomizing component preparation method |
| CN111755186A (en) * | 2020-07-06 | 2020-10-09 | 太仓毅峰电子有限公司 | Production method of chip resistor granules |
| CN112071542A (en) * | 2020-08-20 | 2020-12-11 | 苏州达晶半导体有限公司 | Manufacturing method of PPTC surface electrode |
| CN112071542B (en) * | 2020-08-20 | 2022-03-29 | 苏州达晶半导体有限公司 | Manufacturing method of PPTC surface electrode |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 226200 Jinggangshan Road, Jinggangshan Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province, No. 6 Applicant after: Agile Semiconductor Ltd Address before: 226200 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Park Building 3, room 2159, R & D Applicant before: Agile Semiconductor Ltd |
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| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180223 |