CN107479334B - A kind of method of line width measurement and problem assessment - Google Patents
A kind of method of line width measurement and problem assessment Download PDFInfo
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- CN107479334B CN107479334B CN201710797215.4A CN201710797215A CN107479334B CN 107479334 B CN107479334 B CN 107479334B CN 201710797215 A CN201710797215 A CN 201710797215A CN 107479334 B CN107479334 B CN 107479334B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention proposes a kind of method that intelligent line width measures and problem is assessed, it include: that input line width measures scheme, it inputs whole amount and surveys identification information, input corresponding line width target bound and anomaly assessment standard, complete data collection, a measuring value is often obtained in measurement, automatically it is compared with target bound, the data point exceeded is marked as problem, according to evaluation criteria, judge whether that data collection plan need to be increased, if problem proportion is more than setting value, then generate line width exception reporting, if ratio is in range of set value, which measurement mark new data collection plan need to be included according to evaluation criteria judgement to measure, if there are also problems in the metric data newly obtained, it is marked, until metric data is all fallen in target upper and lower limits, generate line width problem and influence degree report.The present invention can reduce the time of determining line width problem scope, disposably obtain line width problem and influence degree, judge convenient for engineer and take next step processing scheme.
Description
Technical field
The present invention relates to microelectronics photoetching process fields, and in particular to a kind of intelligent line width measures and problem assessment
Method.
Background technique
Continuing to optimize and reforming with integrated circuit fabrication process, the integrated level of modern integrated circuits is from last generation
Every of the sixties upper tens device of recording, which improves, can integrate billions of a devices on one by now.The feature ruler of chip
The very little development also with Moore's Law is constantly reduced, and the continuous reduction of key graphic line width proposes photoetching process huge
Challenge.Photoetching is exposed to the photoresist on medium, barrier layer of the part left by development as subsequent etching,
The figure that we want is left on medium, and the line width of the figure left has very important shadow to the performance of device
It rings.In the process of IC manufacturing, there is the line width of key graphic on special device measuring wafer, it is detection photoetching work
One key index of skill quality, the most ideal situation is that the line width of each figure is identical with target value, with target value
Difference be zero.
About the measurement of line width, the general method of industry is to carry out according to pre-determined measurement scheme, this measurement
Scheme includes which exposing unit is measured on wafer, measures which kind figure in an exposing unit, a kind of graphical measurement which
Several positions respectively measure a kind of figure of nine fixed each exposing units of exposing unit as illustrated in figs. 1A and ib
Totally 9 line width marks of one position, measure four kinds of figures, two positions of 13 fixed each exposing units of exposing unit
The totally 104 line width marks set.Data that the measurement scheme that engineer is fixed based on this obtains judge whether line width meets
Design requirement needs to additionally set up measurement scheme and goes to decision problem area when the line width of some or multiple measuring points has abnormal
The range in domain, to take next step processing method.The problem of this general method be go to establish again after finding the problem it is new
Measurement scheme processing mode the time required to it is long, add additional loading and unload the time of wafer, influence production capacity, Er Qieyi
Often point is likely to occur at an arbitrary position, and artificial goes to decision problem region to be easy to cause omission.Present production of the industry to semiconductor
It can require higher and higher, the measurement of photoetching process also faces huge challenge, how not to lose again while improving and measuring speed
Leakage problem is the problem of we will face.
Summary of the invention
The method with problem assessment is measured the invention proposes a kind of intelligent line width, it is possible to reduce determine line width problem model
The time enclosed, line width problem and problem influence degree are disposably obtained, judge convenient for engineer and takes next step processing scheme.
In order to achieve the above object, the present invention proposes a kind of method that line width measures and problem is assessed, including the following steps:
The line width that input is normally fixed measures scheme；
Input the information that all available line width measurement identifies on wafer；
Input the target bound and line width anomaly assessment standard of corresponding line width；
Normally fixed line width data collection is completed, during measurement, the measuring value for measuring mark is often obtained, is
System automatically compares it with target bound, if measuring value in target upper and lower limits, directly generates line width report,
If there is exceeding the data point of target bound, then beginning next step is marked；
The problem of for being marked, system judge automatically according to evaluation criteria and whether need to increase new data receipts
Collection scheme directly generates line width exception reporting, if ratio is in setting value model if problem proportion is more than setting value
In enclosing, then start next step；
System, which judges automatically to need to measure which to identify further according to evaluation criteria, is included in new data collection plan progress
It measures, if the metric data newly obtained starts next step in target upper and lower limits, if the measurement newly obtained
Still there is the problem of beyond target bound in data, be then marked again, repeat this step；
And so on, until the metric data of line width is all fallen in target upper and lower limits, generate line width problem and problem
Influence degree report.
Further, it includes the device in the edge and exposing unit of exposing unit that the available line width of the whole, which measures mark,
All marks and component graphics for being exclusively used in line width measurement near part.
Further, line width anomaly assessment standard setting problem proportion, the ratio is based on different lines
Wide required precision and different types of figure are set.
Further, the line width anomaly assessment standard sets a distance problem point from wafer general level
Distance, in the distance range with problem identical type measurement mark can be included into new data collection plan, should
Distance is set based on different measurement mark distribution densities.
Further, the line width anomaly assessment standard sets a distance problem point from exposing unit level
The distance at place exposing unit center, the amount identical with problem relative position coordinates in the exposing unit in the distance range
Mark knowledge can be included into new data collection plan, which is set based on different exposing unit distribution densities.
Further, the measurement mark adjusted the distance within the scope of the problem of being marked predetermined distance is measured
When, the point measured can be skipped.
Intelligence line width proposed by the present invention measures and the method for problem assessment, firstly, inputting normally fixed line width
Measurement scheme then inputs the information that all available line width measurement identifies on wafer, then inputs in the target of corresponding line width
Lower limit and line width anomaly assessment standard, then complete the line width data collection normally fixed, during measurement, often obtain one
A measuring value for measuring mark, system automatically compare it with target bound, and the data point beyond target bound is labeled
Whether out, for being marked the problem of, system judge automatically according to evaluation criteria and need to increase new data collection side
Case directly generates line width exception reporting, if ratio is in range of set value if problem proportion is more than setting value
Interior, system is judged automatically to need which measurement mark being included in new data collection plan further according to evaluation criteria and be measured,
If still there is the problem of beyond target bound in the metric data newly obtained, then it is marked, and so on,
Until the metric data of line width is all fallen in target upper and lower limits, generation line width problem and problem influence degree are reported.This hair
The intelligent line width of bright offer measures and the method for problem assessment, it is possible to reduce determines the time of line width problem scope, disposably
Line width problem and problem influence degree are obtained, judge convenient for engineer and takes next step processing scheme.
Detailed description of the invention
Fig. 1 a show one position view of a kind of figure for measuring nine fixed each exposing units of exposing unit.
Fig. 1 b show four kinds of figures, the two position signals for measuring 13 fixed each exposing units of exposing unit
Figure.
Fig. 1 c, which is shown, measures whole available line widths measurement mark schematic diagrames on wafer.
The intelligent line width that Fig. 2 show present pre-ferred embodiments measures and the method flow diagram of problem assessment.
Specific embodiment
A specific embodiment of the invention is provided below in conjunction with attached drawing, but the present invention is not limited to the following embodiments and the accompanying drawings.Root
According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted that attached drawing be all made of it is very simple
The form of change and use non-accurate ratio, be only used for conveniently, lucidly aid in illustrating the embodiment of the present invention purpose.
Referring to FIG. 2, the intelligent line width that Fig. 2 show present pre-ferred embodiments measures and the method stream of problem assessment
Cheng Tu.The present invention proposes a kind of method that line width measures and problem is assessed, including the following steps:
SO1: the line width that input is normally fixed measures scheme；In preferred embodiment, nine exposures as shown in Figure 1a are single
A kind of information of one position of figure of each exposing unit of member；
SO2: all available line width measures the information of mark on input wafer；All exposures on wafer as illustrated in figure 1 c
A kind of information of all positions of figure on unit；
SO3: the target bound and line width anomaly assessment standard of corresponding line width are inputted；It is input in preferred embodiment
67 ± the 2nm of target bound and line width anomaly assessment standard: problem proportion threshold of a kind of line width of the figure measured
Value 25%, wafer general level distance 7mm, exposing unit level distance 21mm；
SO4: completing normally fixed line width data collection, during measurement, often obtains the measurement for measuring mark
Value, system automatically compares it with target bound, if measuring value directly generates line width in target upper and lower limits
Report is then marked beginning next step if there is exceeding the data point of target bound；In the present embodiment, have
Body is to complete normally fixed line width data collection, during measurement, often obtains the measuring value for measuring mark, system is certainly
It is dynamic to compare it with 67 ± 2nm of target bound, it is directly raw if measuring value is within the scope of 67 ± 2nm of target bound
It is reported at line width, if there is exceeding the data point of 67 ± 2nm of target bound, is then marked and starts SO5；
SO5: the problem of for being marked, whether system judges automatically according to evaluation criteria and needs to increase new number
Line width exception reporting is directly generated, if ratio is being set if problem proportion is more than setting value according to collection scheme
It is worth in range, then starts next step；In the present embodiment, concrete operations be for being marked the problem of, system according to
Whether evaluation criteria judges automatically and needs to increase new data collection plan, if the problem of being marked quantity is 3,
Proportion is 33.33% greater than threshold value 25%, and it is larger to illustrate that the line width of wafer there is a problem of, it is different to directly generate linewidth error
Often report, if the problem of being marked quantity is 1, proportion is 11.11% less than threshold value 25%, then starts SO6；
SO6: system, which judges automatically to need which measuring mark further according to evaluation criteria, is included in new data collection plan
It is measured, if the metric data newly obtained starts next step in target upper and lower limits, if newly obtain
Still there is the problem of beyond target bound in metric data, be then marked again, repeat this step；According to the present invention
Preferred embodiment, specially system, which judge automatically to need which measuring mark further according to evaluation criteria, is included in new data collection
Scheme is measured, and the measurement of the identical type within the scope of this 1 problem 7mm is identified, and apart from this 1 problem
In exposing unit where point within the scope of exposing unit center 21mm with problem (in exposing unit) relative position coordinates phase
Same measurement mark is included in new data collection plan, if the metric data newly obtained is in target bound 67 ± 2nm model
In enclosing, then start SO7, if still there is the problem of beyond target 67 ± 2nm of bound in the metric data newly obtained, then
It is marked, repeats SO6
SO7: and so on, until the metric data of line width is all fallen in target upper and lower limits, generate line width problem and
The report of problem influence degree.
Further, it includes the device in the edge and exposing unit of exposing unit that the available line width of the whole, which measures mark,
All marks and component graphics for being exclusively used in line width measurement near part.
Further, line width anomaly assessment standard setting problem proportion, the ratio is based on different lines
Wide required precision and different types of figure are set.
Further, the line width anomaly assessment standard sets a distance problem point from wafer general level
Distance, in the distance range with problem identical type measurement mark can be included into new data collection plan, should
Distance is set based on different measurement mark distribution densities.
Further, the line width anomaly assessment standard sets a distance problem point from exposing unit level
The distance at place exposing unit center, the amount identical with problem relative position coordinates in the exposing unit in the distance range
Mark knowledge can be included into new data collection plan, which is set based on different exposing unit distribution densities.
Further, the measurement mark adjusted the distance within the scope of the problem of being marked predetermined distance is measured
When, the point measured can be skipped.
In conclusion intelligence line width proposed by the present invention measures and the method for problem assessment, firstly, input is normal solid
Fixed line width measures scheme, then inputs the information that all available line width measurement identifies on wafer, then input corresponding line width
Target bound and line width anomaly assessment standard, then complete the line width data collection normally fixed, during measurement,
The measuring value for measuring mark is often obtained, system automatically compares it with target bound, the data beyond target bound
Point is labeled to be come out, and the problem of for being marked, whether system judges automatically according to evaluation criteria and need to increase new number
Line width exception reporting is directly generated, if ratio is being set if problem proportion is more than setting value according to collection scheme
It is worth in range, system, which judges automatically to need to measure which to identify further according to evaluation criteria, is included in new data collection plan progress
It measures, if still there is the problem of beyond target bound in the metric data newly obtained, then is marked, with this
Analogize, until the metric data of line width is all fallen in target upper and lower limits, generation line width problem and problem influence degree are reported.
Intelligence line width provided by the invention measures and the method for problem assessment, it is possible to reduce determine the time of line width problem scope, one
Secondary property obtains line width problem and problem influence degree, judges convenient for engineer and takes next step processing scheme.
Although the present invention has been disclosed as a preferred embodiment, however, it is not to limit the invention.Skill belonging to the present invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, the scope of protection of the present invention is defined by those of the claims.
Claims (5)
1. a kind of line width measures and the method for problem assessment, characterized in that it comprises the following steps:
The line width that input is normally fixed measures scheme；
Input the information that all available line width measurement identifies on wafer；
Input the target bound and line width anomaly assessment standard of corresponding line width；
Normally fixed line width data collection is completed, during measurement, often obtains the measuring value for measuring mark, system is certainly
It is dynamic to compare it with target bound, if measuring value in target upper and lower limits, directly generates line width report, if
There is the data point beyond target bound, is then marked beginning next step；
Whether the problem of for being marked, system judge automatically according to evaluation criteria and need to increase new data collection side
Case directly generates line width exception reporting, if ratio is in range of set value if problem proportion is more than setting value
It is interior, then start next step；
System is judged automatically to need which measurement mark being included in new data collection plan further according to evaluation criteria and be measured,
If the metric data newly obtained in target upper and lower limits, starts next step, if the metric data newly obtained
In still have the problem of beyond target bound, then be marked again, repeat this step；
The line width anomaly assessment standard sets the distance of a distance problem point from wafer general level, this away from
It can be included into new data collection plan from the measurement mark with problem identical type in range, the distance is based on different
Mark distribution density is measured to be set；
And so on, until the metric data of line width is all fallen in target upper and lower limits, generating line width problem and problem influences
Degree report.
2. line width according to claim 1 measures and the method for problem assessment, which is characterized in that the available line of whole
It includes all marks for being exclusively used in line width measurement in the edge and exposing unit of exposing unit near device that width, which measures mark,
And component graphics.
3. line width according to claim 1 measures and the method for problem assessment, which is characterized in that the line width anomaly assessment
Standard setting problem proportion, which is required based on different Line-width precisions and different types of figure is set
It is fixed.
4. line width according to claim 1 measures and the method for problem assessment, which is characterized in that the line width anomaly assessment
Standard is from exposing unit level, the distance at exposing unit center where setting a distance problem point, this apart from model
Measurement mark identical with problem relative position coordinates can be included into new data collection plan in exposing unit in enclosing, should
Distance is set based on different exposing unit distribution densities.
5. line width according to claim 1 measures and the method for problem assessment, which is characterized in that adjusting the distance is marked
When measurement mark within the scope of problem predetermined distance is measured, the point measured can be skipped.
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| JPH02253484A (en) * | 1989-03-28 | 1990-10-12 | Toppan Printing Co Ltd | Method and device for automatically setting threshold value for binarization |
| JP2005301156A (en) * | 2004-04-15 | 2005-10-27 | Sony Corp | Inspection method and apparatus for mask defect, and method for creating reference for mask inspection |
| CN1699916A (en) * | 2004-03-25 | 2005-11-23 | 株式会社三丰 | System and method for excluding extraneous features from image inspection operations |
| CN102683238A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Method for improving line width measurement accuracy alignment of picture |
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- 2017-09-06 CN CN201710797215.4A patent/CN107479334B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02253484A (en) * | 1989-03-28 | 1990-10-12 | Toppan Printing Co Ltd | Method and device for automatically setting threshold value for binarization |
| CN1699916A (en) * | 2004-03-25 | 2005-11-23 | 株式会社三丰 | System and method for excluding extraneous features from image inspection operations |
| JP2005301156A (en) * | 2004-04-15 | 2005-10-27 | Sony Corp | Inspection method and apparatus for mask defect, and method for creating reference for mask inspection |
| CN102683238A (en) * | 2012-05-04 | 2012-09-19 | 上海华力微电子有限公司 | Method for improving line width measurement accuracy alignment of picture |
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