CN107369604B - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN107369604B CN107369604B CN201610318302.2A CN201610318302A CN107369604B CN 107369604 B CN107369604 B CN 107369604B CN 201610318302 A CN201610318302 A CN 201610318302A CN 107369604 B CN107369604 B CN 107369604B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims description 32
- 239000012495 reaction gas Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 10
- 230000005672 electromagnetic field Effects 0.000 claims description 7
- 230000005284 excitation Effects 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 230000005684 electric field Effects 0.000 abstract description 25
- 238000009826 distribution Methods 0.000 abstract description 18
- 238000000034 method Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 24
- 238000009616 inductively coupled plasma Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000001939 inductive effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
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- Plasma Technology (AREA)
Abstract
The present invention provides a kind of reaction chamber and semiconductor processing equipment, including Top electrode device and lower electrode device, which is arranged in reaction chamber, is used for bearing wafer.Top electrode device includes medium cylinder, coil, upper power power-supply and top electrode assembly, wherein the top of reaction chamber is arranged in medium cylinder；The periphery of medium cylinder is arranged in coil encircling；Top electrode assembly includes electric pole plate, which is arranged in the top of medium cylinder；Upper power power-supply is for loading exciting power to electric pole plate and coil simultaneously or respectively.Reaction chamber provided by the invention not only can reduce the voltage differences between the output end of coil and input terminal, but also can weaken the influence unevenly generated by the electric field of coil, so as to improve the density distribution uniformity of plasma.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor processing equipment.
Background
In the semiconductor field, for a dry etching process and a thin film deposition process, commonly used Plasma sources include an Inductively Coupled Plasma (ICP) source and a Capacitively Coupled Plasma (CCP) source. The ICP source excites the reaction gas to generate plasma by an electromagnetic field generated by current passing through the coil, and has the characteristics of high plasma density, small damage to a workpiece and the like. The CCP source excites the reaction gas by the voltage applied between the electrode plates to generate plasma, and has the characteristics of good large-area uniformity, high ion energy and the like.
Fig. 1 is a sectional view of a reaction chamber of a conventional ICP source. As shown in fig. 1, the reaction chamber 10 is defined by a top cover 11, a dielectric window 12 and a cavity 19, specifically, the dielectric window 12 is of a cylindrical structure and is arranged at the top of the cavity 19, and the lower opening of the dielectric window 12 is communicated with the upper opening of the cavity 19; the top cover 11 is provided on top of the dielectric window 12 to close the upper opening of the dielectric window 12. Also, a gas inlet through which a gas source 15 delivers reaction gas into the reaction chamber 10 is provided at a central position of the top cover 11. In addition, a coil 13 is disposed around the outer side of the dielectric window 12, an input end (a left end of the coil 13 shown in fig. 1) of the coil 13 is electrically connected to a radio frequency power supply 14, an output end (a right end of the coil 13 shown in fig. 1) of the coil 13 is grounded, and a susceptor 16 for carrying a wafer 17 is further disposed in the reaction chamber 10, the susceptor 16 being electrically connected to a radio frequency power supply 18.
The above reaction chamber inevitably has the following problems in practical use:
first, due to the influence of the coil structure, the high-frequency electric field generated by the coil tends to be M-shaped, and the distribution causes the density of the plasma generated in the reaction chamber to be M-shaped, so that the plasma density distribution on the wafer surface is uneven, and the process uniformity is further affected.
Secondly, because the output end of the coil is grounded, the voltage difference between the output end and the input end of the coil is large, so that the voltage is unevenly distributed along the surface of the coil, and the electromagnetic field generated by the coil is unevenly distributed. Although a method of connecting a capacitor in series between the output terminal and the ground terminal of the coil may be used to make the voltage between the output terminal and the input terminal of the coil uniform, in fact, this method cannot really make the voltage between the output terminal and the input terminal of the coil uniform because: when the process is carried out, capacitive coupling exists between the coil and the plasma, and the capacitive coupling has the effect that the capacitance value of the capacitor connected in series between the output end and the grounding end of the coil changes along with the change of the discharge condition, so that the actual capacitance value of the capacitor connected in series between the output end and the grounding end of the coil has larger deviation with the required capacitance value, the voltage difference between the output end and the input end of the coil is larger, and the problem that the electromagnetic field generated by the coil is not distributed uniformly still exists.
Disclosure of Invention
The present invention is directed to solve at least one of the problems of the prior art, and provides a reaction chamber and a semiconductor processing apparatus, which can reduce the voltage difference between the output terminal and the input terminal of a coil, and can weaken the influence caused by the non-uniformity of the electric field of the coil, thereby improving the uniformity of the density distribution of plasma.
The reaction chamber comprises an upper electrode device and a lower electrode device, wherein the lower electrode device is arranged in the reaction chamber and used for bearing a wafer, the upper electrode device comprises a dielectric cylinder, a coil, an upper power supply and an upper electrode assembly, and the dielectric cylinder is arranged at the top of the reaction chamber; the coil is arranged around the periphery of the medium cylinder; the upper electrode assembly comprises an upper electrode plate disposed at the top of the dielectric cartridge; the upper power supply is used for loading excitation power to the upper electrode plate and the coil simultaneously or respectively.
Preferably, the number of the upper power supply is one; the input end of the coil is electrically connected with the upper power supply, and the output end of the coil is electrically connected with the upper electrode assembly.
Preferably, the number of the upper power supply is one; an input end of the coil is electrically connected to the upper electrode assembly, an output end of the coil is grounded, and the upper electrode assembly is electrically connected to the upper power supply.
Preferably, the number of the upper power supplies is two; the input end of the coil is electrically connected with one of the upper power supplies, and the output end of the coil is grounded; the upper electrode assembly is electrically connected to the other of the upper power sources.
Preferably, the reaction chamber further comprises a grounded shield cover disposed at the periphery of the dielectric window and the upper electrode assembly to shield an electromagnetic field generated by the coil.
Preferably, the reaction chamber further comprises an adjustable capacitor, and the adjustable capacitor is connected in series between the shielding case and the upper electrode assembly.
Preferably, at least one gas inlet is disposed on the upper electrode plate for introducing a reaction gas into the reaction chamber.
Preferably, the upper electrode plate has a cavity serving as a uniform flow cavity; the top of the uniform flow cavity is provided with an air inlet used for conveying reaction gas into the uniform flow cavity; the bottom of the uniform flow cavity is provided with a plurality of air outlets, and the air outlets are uniformly distributed on the bottom surface of the uniform flow cavity and are used for uniformly conveying the reaction gas in the uniform flow cavity into the reaction cavity.
Preferably, the lower electrode device comprises a pedestal and a lower power supply, wherein the pedestal is arranged in the reaction chamber and is used for bearing a wafer; the lower power supply is used for loading radio frequency power to the pedestal.
Preferably, the upper power supply comprises a low frequency power supply or a radio frequency power supply.
As another technical solution, the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber, wherein the reaction chamber provided by the present invention is adopted.
The invention has the following beneficial effects:
the reaction chamber provided by the invention can generate a flat plate type electric field between the reaction chamber and the lower electrode device during the process by virtue of the upper electrode plate, and the flat plate type electric field plays a main role relative to the electric field generated by the coil, so that the influence generated by the non-uniform electric field of the coil can be weakened, the density distribution of the formed plasma is more uniform, and the density distribution uniformity of the plasma can be improved. Meanwhile, the upper power supply loads excitation power to the upper electrode plate and the coil simultaneously or respectively, so that the ICP source formed by the coil and the CCP source formed by the upper electrode plate can discharge simultaneously, the two advantages of electric field uniformity of the CCP source and high plasma density of the ICP source can be compatible, the sheath capacitance formed between the upper electrode plate and the plasma sheath can be adjusted in real time by controlling process conditions such as plasma starting parameters, the phase difference between two ends of the coil can be reduced, the uniformity of an electric field generated by the coil can be improved, and the density distribution uniformity of plasma can be further improved.
According to the semiconductor processing equipment provided by the invention, by adopting the reaction chamber provided by the invention, the voltage difference between the output end and the input end of the coil can be reduced, the influence caused by the non-uniform electric field of the coil can be weakened, and the density distribution uniformity of plasma can be improved.
Drawings
FIG. 1 is a cross-sectional view of a reaction chamber of a prior art ICP source;
FIG. 2A is a cross-sectional view of a reaction chamber provided in a first embodiment of the present invention;
FIG. 2B is an equivalent circuit diagram of the reaction chamber of FIG. 2A during processing;
FIG. 3 is a cross-sectional view of an upper electrode employed in a modified embodiment of the first embodiment of the present invention; and
FIG. 4A is a cross-sectional view of a reaction chamber provided in a second embodiment of the present invention;
FIG. 4B is an equivalent circuit diagram of the reaction chamber of FIG. 4A during processing;
FIG. 5A is a cross-sectional view of a reaction chamber provided in a third embodiment of the present invention;
FIG. 5B is an equivalent circuit diagram of the reaction chamber of FIG. 5A during processing;
FIG. 6A is a cross-sectional view of a reaction chamber provided in a fourth embodiment of the present invention;
FIG. 6B is an equivalent circuit diagram of the reaction chamber of FIG. 6A during processing.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 2A is a cross-sectional view of a reaction chamber according to a first embodiment of the present invention. Referring to FIG. 2A, the reaction chamber includes an upper electrode assembly and a lower electrode assembly. The upper electrode device comprises a medium cylinder 22, a coil 23, an upper power supply 24, a first matcher 25 and an upper electrode assembly. The lower electrode device includes a base 27, a lower power supply 28, and a second matching unit 29.
Wherein, the chamber wall 21 of the reaction chamber is grounded, and the chamber wall 21 surrounds and forms a cavity structure with an opening at the top; the medium cartridge 22 is disposed on the top of the chamber wall 21 and closes the top opening of the chamber wall 21, and the space included in the medium cartridge 22 communicates with the cavity of the chamber wall 21. Also, the upper electrode assembly includes an upper electrode plate 26 having a flat plate shape, which is disposed on the top of the dielectric cylinder 22 and closes the top opening of the dielectric cylinder 22.
The coil 23 is disposed around the outer periphery of the dielectric cylinder 22, an input end 231 of the coil 23 is electrically connected to the upper power supply 24 through the first matching unit 25, and an output end 232 of the coil 23 is electrically connected to the upper electrode plate 26. In performing the process, the upper power supply 24 includes a low frequency power supply or a radio frequency power supply or the like for applying an excitation power of a low frequency or a radio frequency or the like to the coil 23 to excite the reaction gas with the electromagnetic field generated by the coil 23 to generate plasma. Meanwhile, the output end 232 of the coil 23 is electrically connected to the upper electrode plate 26, so that the upper power source 24 can load excitation power to the upper electrode plate 26, and thus, the ICP source formed by the coil and the CCP source formed by the upper electrode plate can discharge simultaneously, and thus, the two advantages of the electric field uniformity of the CCP source and the high plasma density of the ICP source can be compatible.
By electrically connecting the output end 232 of the coil 23 to the upper electrode plate 26, a plate capacitor structure can be formed between the upper electrode plate 26 and the grounded chamber wall 21, and an equivalent circuit diagram of the reaction chamber during the process is shown in fig. 2B. In fig. 2B, the dashed box represents the plasma equivalent model. The plasma is composed of a sheath layer and a plasma area, wherein the sheath layer can be equivalent to a capacitor and diode structure; the plasma region may be equivalent to resistive and inductive structures. L is the equivalent inductance formed by the current of the plasma. R is the plasma equivalent resistance. C1 is the first sheath capacitance formed between the upper electrode plate 26 and the plasma sheath. C2 is the distributed capacitance formed between the upper electrode plate 26 and ground. C3 is the second sheath capacitance formed between pedestal 27 and the plasma sheath.
As can be seen from fig. 2B, during the process, the plate capacitor structure formed between the upper electrode plate 26 and the grounded chamber wall 21 forms the collecting and distributing capacitor C2 and the first sheath capacitor C1, wherein the first sheath capacitor C1 can play a role of modulating the radio frequency current phase of the coil 23, so that the first sheath capacitor C1 can be adjusted in real time by controlling the process conditions such as plasma ignition parameters, etc., to reduce the phase difference between the output end 231 and the input end 232 of the coil 23, thereby improving the uniformity of the electric field generated by the coil, and further improving the density distribution uniformity of the plasma.
For the lower electrode assembly, a susceptor 27 is disposed in the reaction chamber and below the upper electrode plate 26 for carrying the wafer. The susceptor 27 is electrically connected to a lower power supply 28 through a second matching unit 29, and the lower power supply 28 is used for applying a negative bias to the susceptor 27 during a process to attract ions in the plasma to move toward the surface of the wafer. The lower power supply 28 may be a dc power supply, a low frequency power supply, or a radio frequency power supply.
The susceptor 27 and the upper electrode plate 26 can generate a flat plate type electric field during the process, and since the intensity of the electric field generated by the coil 23 is weakened by the dielectric cylinder 22, which is much higher than the intensity of the electric field generated by the coil 23, the flat plate type electric field plays a major role in the electric field generated by the coil 23, thereby weakening the influence due to the non-uniformity of the electric field of the coil 23, further making the density distribution of the formed plasma more uniform, and thus improving the density distribution uniformity of the plasma.
In this embodiment, a shielding cover 30 is further covered on the periphery of the dielectric cylinder 22 and the upper electrode plate 26, as shown in fig. 2A, the shielding cover 30 forms a closed space with the dielectric cylinder 22 and the upper electrode plate 26, and the coil 23 is located in the closed space. And, the shielding cover 30 is grounded, and the shielding cover 30 can shield the electromagnetic field generated by the coil 23 when the process is performed, so as to prevent the process from being affected by the radio frequency radiation generated by the radio frequency power supply when power is fed.
In this embodiment, the reaction chamber further includes an air inlet pipeline 31 and an air source 33, wherein an air outlet end of the air inlet pipeline 31 penetrates through the upper electrode plate 26 and is communicated with the inside of the reaction chamber; the air inlet end of the air inlet pipeline 31 is connected with an air source 33 through an insulating pipe 32. During the process, the reaction gas supplied from the gas source 33 enters the reaction chamber through the insulating tube 32 and the gas inlet line 31 in this order.
In practical applications, other means may be used to deliver the reactant gases into the reaction chamber. For example, the upper electrode plate is provided with a gas inlet through which a reaction gas is introduced into the reaction chamber. The number of the air inlets can be one, and the air inlets are arranged at the central position of the upper electrode plate, or the number of the air inlets can also be multiple, and the air inlets are uniformly distributed along the plane of the upper electrode plate.
As another example, as shown in FIG. 3, the upper electrode plate has a cavity that serves as a plenum 40. Furthermore, an air inlet 41 is provided at the top of the uniform flow cavity 40 (i.e., the top chamber wall of the uniform flow cavity 40), and a plurality of air outlets 42 are provided at the bottom of the uniform flow cavity 40 (i.e., the bottom chamber wall of the uniform flow cavity 40), and are uniformly distributed with respect to the bottom surface of the uniform flow cavity 40 (i.e., the plane of the bottom chamber wall). In the process, the reaction gas firstly enters the flow equalizing cavity 40 through the gas inlet 41, and diffuses to the periphery until the whole flow equalizing cavity 40 is filled, so as to homogenize the reaction gas, and then the reaction gas uniformly flows into the reaction cavity through the gas outlet holes 42. The flow direction of the reaction gas is shown by the arrows in fig. 3.
Fig. 4A is a cross-sectional view of a reaction chamber according to a second embodiment of the present invention. Referring to fig. 4A, the reaction chamber provided in this embodiment is different from the first embodiment only in that: an adjustable capacitor 50 is also connected in series between the shield 30 and the upper electrode plate 26.
FIG. 4B is an equivalent circuit diagram of the reaction chamber of FIG. 4A during processing. As shown in fig. 4B, C4 is an adjustable capacitor 50, and the voltage at the output end 232 of the coil 23 can be distributed to the first sheath capacitor C1 and the adjustable capacitor 50, that is, the adjustable capacitor 50 can perform a function of dividing the voltage across the coil 23, and since the capacitance value thereof is adjustable, by adjusting the capacitance value of the adjustable capacitor 50 connected to the circuit, the distribution of the voltage across the coil 23 can be adjusted to reduce the voltage difference between the output end 231 and the input end 232 of the coil 23, so that not only the uniformity of the electric field generated by the coil can be further improved, but also the flexibility of capacitance adjustment can be improved.
The structure and function of other devices or components in this embodiment are similar to those in the first embodiment, and are not described again since they have been described in detail in the first embodiment.
Fig. 5A is a cross-sectional view of a reaction chamber according to a third embodiment of the present invention. FIG. 5B is an equivalent circuit diagram of the reaction chamber of FIG. 5A during processing. Referring to fig. 5A and 5B, the reaction chamber provided in this embodiment is different from the first embodiment only in that: the input terminal 231 of the coil 23 is electrically connected to the upper electrode plate 26, the output terminal 232 of the coil 23 is grounded through a ground line, and the upper electrode plate 26 is electrically connected to the upper power supply 24 through the first matching unit 25. This also makes it possible for the upper power source 24 to simultaneously apply excitation power to the coil 23 and the upper electrode plate 26.
The equivalent circuit diagram of the reaction chamber during the process is shown in fig. 5B. In fig. 5B, a dashed box represents a plasma equivalent model. The plasma is composed of a sheath layer and a plasma area, wherein the sheath layer can be equivalent to a capacitor and diode structure; the plasma region may be equivalent to resistive and inductive structures. L is the equivalent inductance formed by the current of the plasma. R is the plasma equivalent resistance. C1 is the first sheath capacitance formed between the upper electrode plate 26 and the plasma sheath. C2 is the distributed capacitance formed between the upper electrode plate 26 and ground. C3 is the second sheath capacitance formed between pedestal 27 and the plasma sheath.
As can be seen from fig. 5B, during the process, a plate capacitor structure is formed between the upper electrode plate 26 and the grounded chamber wall 21, and the structure forms a distributed capacitor C2 and a first sheath capacitor C1, wherein the first sheath capacitor C1 can play a role of modulating the radio frequency current phase of the coil 23, so that by controlling the process conditions such as plasma ignition parameters, the first sheath capacitor C1 can be adjusted in real time to reduce the relative difference between the output end 231 and the input end 232 of the coil 23, and further improve the uniformity of the electric field generated by the coil, thereby further improving the density distribution uniformity of the plasma.
The structure and function of other devices or components in this embodiment are similar to those in the first embodiment, and are not described again since they have been described in detail in the first embodiment.
Fig. 6A is a cross-sectional view of a reaction chamber according to a fourth embodiment of the present invention. FIG. 6B is an equivalent circuit diagram of the reaction chamber of FIG. 6A during processing. Referring to fig. 6A and fig. 6B, the reaction chamber provided in this embodiment is different from the first embodiment only in that: the upper power supplies are two, a first upper power supply 24 and a second upper power supply 34. An input end 231 of the coil 23 is electrically connected to the first upper power supply 24 through the first matching unit 25, and an output end 232 of the coil 23 is grounded through a ground line; the upper electrode plate 26 is electrically connected to a second upper power source 34 through a third matching unit 35. That is, the upper power source loads the coil 23 and the upper electrode plate 26 with excitation power by the first upper power source 24 and the second upper power source 34, respectively.
The equivalent circuit diagram of the reaction chamber during the process is shown in fig. 6B. In fig. 6B, a dashed box represents a plasma equivalent model. The plasma is composed of a sheath layer and a plasma area, wherein the sheath layer can be equivalent to a capacitor and diode structure; the plasma region may be equivalent to resistive and inductive structures. L is the equivalent inductance formed by the current of the plasma. R is the plasma equivalent resistance. C1 is the first sheath capacitance formed between the upper electrode plate 26 and the plasma sheath. C2 is the distributed capacitance formed between the upper electrode plate 26 and ground. C3 is the second sheath capacitance formed between pedestal 27 and the plasma sheath.
As can be seen from fig. 6B, during the process, a plate capacitor structure is formed between the upper electrode plate 26 and the grounded chamber wall 21, and the distributed capacitor C2 and the first sheath capacitor C1 are formed, wherein the first sheath capacitor C1 can act to modulate the radio frequency current phase of the coil 23, so that the first sheath capacitor C1 is adjusted in real time by controlling the process conditions such as the plasma ignition parameter, etc., to reduce the phase difference between the output 231 and input 232 of the coil 23, and further improve the uniformity of the electric field generated by the coil, thereby further improving the density distribution uniformity of the plasma.
Also, the plasma generated by the coil 23 and the plasma generated by the upper electrode plate 26 can be independently controlled by the first upper power supply 24 and the second upper power supply 34, respectively. Therefore, the ICP source can be independently operated, the CCP source can be independently operated or the ICP source and the CCP source can be simultaneously operated according to actual process requirements, and the selectivity of plasma generation can be improved. That is, it is selected to turn on only the first upper power supply 24, or to turn on only the second upper power supply 34, or to turn on both the first upper power supply 24 and the second upper power supply 34.
In addition, by means of the first upper power supply 24 and the second upper power supply 34, the upper electrode plate 26, the base 27 and the coil 23 can be formed into a "three-electrode" structure, which not only can increase the density of plasma, but also can enlarge the adjustable window of plasma discharge.
In summary, the reaction chamber provided in the above embodiments of the present invention can weaken the influence caused by the non-uniform electric field of the coil, so as to make the density distribution of the formed plasma more uniform, and further improve the density distribution uniformity of the plasma. Meanwhile, the ICP source formed by the coil and the CCP source formed by the upper electrode plate can discharge simultaneously, so that the two advantages of the electric field uniformity of the CCP source and the high plasma density of the ICP source can be compatible, the sheath capacitance formed between the upper electrode plate and the plasma sheath can be adjusted in real time by controlling the process conditions such as plasma starting parameters and the like, the phase difference between the two ends of the coil can be reduced, the uniformity of the electric field generated by the coil can be improved, and the density distribution uniformity of the plasma can be further improved.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber, where the reaction chamber provided in each of the above embodiments of the present invention is used.
According to the semiconductor processing equipment provided by the embodiment of the invention, by adopting the reaction chamber provided by each embodiment of the invention, the voltage difference between the output end and the input end of the coil can be reduced, the influence caused by the non-uniform electric field of the coil can be weakened, and the density distribution uniformity of the plasma can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (6)
1. A reaction chamber comprises an upper electrode device and a lower electrode device, wherein the lower electrode device is arranged in the reaction chamber and is used for bearing a wafer, the reaction chamber is characterized in that the upper electrode device comprises a medium cylinder, a coil, an upper power supply and an upper electrode assembly, wherein,
the medium barrel is arranged at the top of the reaction chamber;
the coil is arranged around the periphery of the medium cylinder;
the upper electrode assembly comprises an upper electrode plate, and the upper electrode plate is arranged at the top of the medium cylinder;
the upper power supply is used for loading excitation power to the upper electrode plate and the coil simultaneously or respectively; wherein,
the number of the upper power supply is one;
the input end of the coil is electrically connected with the upper power supply, and the output end of the coil is electrically connected with the upper electrode assembly;
the reaction chamber also comprises a grounded shielding cover which is covered on the periphery of the dielectric window and the upper electrode assembly and is used for shielding an electromagnetic field generated by the coil;
the reaction chamber further comprises an adjustable capacitor, and the adjustable capacitor is connected in series between the shielding case and the upper electrode assembly.
2. The reaction chamber of claim 1, wherein at least one gas inlet is disposed on the upper electrode plate for introducing a reaction gas into the reaction chamber.
3. The reaction chamber of claim 1, wherein the upper electrode plate has a cavity serving as a flow-homogenizing chamber;
the top of the uniform flow cavity is provided with an air inlet used for conveying reaction gas into the uniform flow cavity;
the bottom of the uniform flow cavity is provided with a plurality of air outlets, and the air outlets are uniformly distributed on the bottom surface of the uniform flow cavity and used for uniformly conveying the reaction gas in the uniform flow cavity into the reaction cavity.
4. The reaction chamber of claim 1 wherein the lower electrode assembly comprises a susceptor and a lower power supply, wherein,
the base is arranged in the reaction chamber and used for bearing a wafer;
the lower power supply is used for loading radio frequency power to the pedestal.
5. The reaction chamber of claim 1, wherein the upper power supply comprises a low frequency power supply or a radio frequency power supply.
6. A semiconductor processing apparatus comprising a reaction chamber, wherein the reaction chamber is the reaction chamber of any one of claims 1 to 5.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318302.2A CN107369604B (en) | 2016-05-12 | 2016-05-12 | Reaction chamber and semiconductor processing equipment |
| TW105129849A TWI641044B (en) | 2016-05-12 | 2016-09-13 | Reaction chamber and semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318302.2A CN107369604B (en) | 2016-05-12 | 2016-05-12 | Reaction chamber and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107369604A CN107369604A (en) | 2017-11-21 |
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| CN110660635B (en) * | 2018-06-29 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN111069192A (en) * | 2018-10-22 | 2020-04-28 | 北京北方华创微电子装备有限公司 | In-situ cleaning device and semiconductor processing equipment |
| CN112768333A (en) * | 2019-11-05 | 2021-05-07 | 聚昌科技股份有限公司 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
| CN114121581B (en) * | 2020-08-27 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| CN112376029B (en) * | 2020-11-11 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN113533308A (en) * | 2021-06-15 | 2021-10-22 | 杭州谱育科技发展有限公司 | Device and method for detecting elements in radioactive sample |
| KR102654487B1 (en) * | 2021-12-29 | 2024-04-05 | 피에스케이 주식회사 | Plasma generation unit, and apparatus for treating substrate with the same |
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| EP0520519A1 (en) * | 1991-06-27 | 1992-12-30 | Applied Materials, Inc. | Plasma processing reactor and process for plasma etching |
| CN1284209C (en) * | 2002-02-06 | 2006-11-08 | 松下电器产业株式会社 | Plasma processing method and apparatus |
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| US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
| US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
| US9779916B2 (en) * | 2009-08-31 | 2017-10-03 | Lam Research Corporation | Radio frequency (RF) ground return arrangements |
| US8604697B2 (en) * | 2009-12-09 | 2013-12-10 | Jehara Corporation | Apparatus for generating plasma |
| JP5808697B2 (en) * | 2012-03-01 | 2015-11-10 | 株式会社日立ハイテクノロジーズ | Dry etching apparatus and dry etching method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP0520519A1 (en) * | 1991-06-27 | 1992-12-30 | Applied Materials, Inc. | Plasma processing reactor and process for plasma etching |
| CN1284209C (en) * | 2002-02-06 | 2006-11-08 | 松下电器产业株式会社 | Plasma processing method and apparatus |
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| CN107369604A (en) | 2017-11-21 |
| TW201740456A (en) | 2017-11-16 |
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