CN107219671A - Array base palte and preparation method thereof, liquid crystal display panel and preparation method thereof, LCDs and application - Google Patents
Array base palte and preparation method thereof, liquid crystal display panel and preparation method thereof, LCDs and application Download PDFInfo
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- CN107219671A CN107219671A CN201710607247.3A CN201710607247A CN107219671A CN 107219671 A CN107219671 A CN 107219671A CN 201710607247 A CN201710607247 A CN 201710607247A CN 107219671 A CN107219671 A CN 107219671A
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- base palte
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- Nonlinear Science (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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Abstract
Field is manufactured the present invention relates to liquid crystal display, array base palte and preparation method thereof, liquid crystal display panel and preparation method thereof, LCDs and application is disclosed.A kind of array base palte that the present invention is provided, including transparent substrates, the accumulation horizon set in the side of the transparent substrates, and at least one data wire, scan line and the pixel electrode being connected with the accumulation horizon, wherein, reflector layer is set at least part outer surface of the opposite side of the transparent substrates.The array base palte can prevent the polysilicon in the polysilicon layer because of the big phenomenon of electric leakage rheology that illumination is produced, and in accumulation horizon to have the uniform advantage of crystallization, meanwhile, reflector layer can strengthen the utilization ratio of backlight, and reduction shows energy consumption.
Description
Technical field
Field is manufactured the present invention relates to liquid crystal display, and in particular to array base palte and preparation method thereof, LCD
Plate and preparation method thereof, LCDs and application.
Background technology
At present, due to using low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) thin film transistor (TFT)
(TFT) display panel of manufacture has the advantages that high resolution, reaction speed be fast, high brightness, high aperture, and LTPS-TFT is shown
The application of panel is more and more extensive.
As shown in Fig. 2 existing LTPS array base paltes generally comprise transparent substrates, and build on a transparent substrate
TFT components.Because of polysilicon (P-si) mobility (50-200cm2/ vs) it is higher, it is easily caused leakage current if it is by illumination
Become big, influence the display effect of display panel.
In order to solve the above problems, in the prior art generally by the setting screening between transparent substrates and the first insulating barrier
Photosphere (as shown in Figure 2 20, Line shied layer, LS) prevents influence of the backlight to P-Si at TFT channel.Shading
Layer absorbs light, so as to avoid electric leakage rheology big, but is due to that first insulating barrier edge of the place mat on light shield layer is inevitable
There is ladder, cause ladder to be in when non-crystalline silicon is converted into polysilicon and crystallization non-uniform phenomenon, Jin Erying are produced because of out-of-flatness
Semiconductor devices uniformity is rung, causes the problem of display effect is not good, such as picture, which is shown, to turn white, patch, has irregular colour even
Phenomenon.
The content of the invention
The invention aims to the above mentioned problem for overcoming prior art presence, there is provided a kind of array base palte and its preparation
Method, liquid crystal display panel and preparation method thereof, LCDs and application, the array base palte can prevent what is produced by illumination
Polysilicon in the big phenomenon of rheology, and polysilicon layer in accumulation horizon of leaking electricity has the uniform advantage of crystallization, meanwhile, reflector layer energy
Enough strengthen the utilization ratio of backlight, reduction shows energy consumption.
To achieve these goals, one aspect of the present invention provides a kind of array base palte, including transparent substrates, described
The accumulation horizon that the side of bright substrate is set, and at least one data wire, scan line and the pixel electrode being connected with the accumulation horizon,
Wherein, reflector layer is set at least part outer surface of the opposite side of the transparent substrates.
Preferably, the reflector layer is arranged on the outer surface relative with the accumulation horizon of the transparent substrates.
Preferably, the polysilicon layer in the accumulation horizon is covered in the orthographic projection of the reflector layer on the transparent substrate.
Preferably, the reflector layer is that aluminium lamination, aluminium lamination and indium tin oxide layer composite bed or silver layer and indium tin oxide layer are compound
Layer.
Preferably, the reflector layer is silver layer and indium tin oxide layer composite bed.
Second aspect of the present invention provides the preparation method of above-mentioned array base palte, and this method comprises the following steps：
(1) it is formed with a side external surface in the transparent substrates of accumulation horizon and forms reflector layer, the reflector layer is described
On the outer surface relative with the accumulation horizon of transparent substrates；
(2) pattern is formed on the reflector layer, the heap is covered in the orthographic projection of the pattern on the transparent substrate
Polysilicon layer in lamination.
Preferably, in step (1), the method for forming reflector layer is physically splash plating method.
Preferably, in step (2), the process for forming pattern includes：The reflector layer is subjected to gold-tinted system successively
Journey technique and etching technics.
Third aspect present invention provides a kind of liquid crystal display panel, including：Color membrane substrates, array base palte, and set
Liquid crystal layer in the middle of the color membrane substrates and the array base palte；Wherein, the array base palte is above-mentioned array base palte.
Fourth aspect present invention provide a kind of preparation method of liquid crystal display panel, this method include by color membrane substrates,
Above-mentioned array base palte, and the liquid crystal layer being arranged in the middle of the color membrane substrates and the array base palte are assembled, wherein,
The accumulation horizon of the array base palte is between the transparent substrates of the liquid crystal layer and the array base palte.
Fifth aspect present invention additionally provides a kind of preparation method of liquid crystal display panel, and this method comprises the following steps：
(1) color membrane substrates, no-reflection layer array base palte and liquid crystal layer are assembled, wherein, the no-reflection layer array
Substrate includes transparent substrates, the accumulation horizon set in the side of the transparent substrates, and at least one be connected with the accumulation horizon
Individual data wire, scan line and pixel electrode；
(2) reflector layer is formed on the transparent substrate, and the reflector layer is in the transparent substrates and the accumulation horizon
On relative outer surface；
(3) pattern is formed on the reflector layer, the heap is covered in the orthographic projection of the pattern on the transparent substrate
Polysilicon layer in lamination.
Sixth aspect present invention provides a kind of LCDs, and the LCDs includes above-mentioned array base palte.
Seventh aspect present invention provides above-mentioned LCDs as the application of the display screen of display device.
In the inventive solutions, by the way that light shield layer is changed into reflector layer, and reflector layer is arranged on array base palte
Transparent substrates the outer surface relative with the accumulation horizon on, and cause the orthographic projection shelter of reflector layer on a transparent substrate
The polysilicon layer in accumulation horizon is stated, polysilicon layer can be covered, can be prevented because of the big phenomenon of electric leakage rheology that illumination is produced.And
Reflector layer is arranged on the outer surface of transparent substrates by the inventive method, it is to avoid " ladder " that traditional window layer is present, so that
In the crystallization process of polysilicon, crystallization is uniform, it is ensured that the uniformity of semiconductor devices so that display effect is improved.
In the present invention, the material of reflector layer is that can carry out reflective material, such as aluminium lamination, aluminium lamination and indium tin oxide layer
Composite bed or silver layer and indium tin oxide layer composite bed etc..Because silver layer there may be oxidation, the reflector layer after oxidation, for anti-
Penetrating the effect of light will substantially reduce, and in order to ensure reflective effect, silver layer and indium tin oxide layer composite bed can be used, in silver layer
Outer surface form indium tin oxide layer, can effectively prevent the oxidation of silver layer, so as to ensure the effect of reflector layer, and then ensure half
The uniformity of conductor device, and display effect.
In addition, by the method for the present invention, as shown in figure 3, reflector layer faces backlight, the light of backlight transmitting, big portion
Light splitting passes through transparent substrates from reflector layer both sides, and fraction illumination is mapped to reflector layer surface, and light is reflected in reflective layer surface,
Reflex to backlight reflecting plate, light is reflected again at backlight reflecting plate, reflex to array base palte direction, part light from
Reflector layer both sides pass through transparent substrates, and part illumination is mapped to reflector layer surface secondary reflection again, light final quilt after multiple reflections
Make full use of.And in the prior art, light shield layer absorbs backlight, without backlight is reflected.Thus, by this hair
Bright method, can also strengthen the utilization ratio of backlight, the display consumption of reduction backlight.
Brief description of the drawings
Fig. 1 is the schematic cross-section of the array base palte of the present invention；
Fig. 2 is the schematic cross-section of the array base palte of prior art；
Fig. 3 is the position view of liquid crystal display panel and backlight.
Description of reference numerals
I, reflector layer 1a, the first reflector layer 1b, the second reflector layer
2nd, transparent substrates 3, cushion 4, dielectric layer
5th, polysilicon layer 6a, source electrode 6b, drain electrode
7th, the first insulating barrier 8, grid 9, dielectric layer
10th, the second insulating barrier 11, drain electrode 12, source electrode
II, accumulation horizon
Embodiment
The end points and any value of disclosed scope are not limited to the accurate scope or value herein, these scopes or
Value should be understood to comprising the value close to these scopes or value.For number range, between the endpoint value of each scope, respectively
It can be combined with each other between the endpoint value of individual scope and single point value, and individually between point value and obtain one or more
New number range, these number ranges should be considered as specific open herein.
First aspect present invention provides a kind of array base palte, as shown in figure 1, the array base palte includes transparent substrates 2,
The accumulation horizon II that the sides of the transparent substrates 2 is set, and be connected with the accumulation horizon II at least one data wire, scan line
With pixel electrode (not shown), wherein, set reflective at least part outer surface of the opposite side of the transparent substrates 2
Layer I.
In the present invention, the accumulation horizon II and transparent substrates 2 constitute the conventional thin film transistor (TFT) in this area.This area
Conventional accumulation horizon II includes：Insulating barrier, polysilicon layer, grid, source electrode and drain electrode.
In the preferred embodiment of the present invention, the accumulation horizon II includes：The buffering sequentially formed in transparent substrates 2
Layer 3, dielectric layer 4, certain media layer 4 surface on polysilicon layer 5, the surface of polysilicon layer 5 and certain media layer 4 surface
On the first insulating barrier 7, in the grid 8 on the surface of the first insulating barrier of part 7, on the surface of grid 8 and the table of the first insulating barrier of part 7
The insulating barrier 10 of dielectric layer 9 and second sequentially formed on face, the source electrode 6a and drain electrode 6b that are respectively arranged at the both sides of polysilicon layer 5,
And through the second insulating barrier 10, the insulating barrier 7 of dielectric layer 9 and first and source electrode 6a and drain electrode the 6b source electrode 12 being connected respectively and
Drain electrode 11.
In the present invention, the array base palte (does not show at least including a data wire, scan line and pixel electrode in figure
Go out).
In the present invention, the data wire is connected with source electrode 12, for by data signal transmission to source electrode 12.
In the present invention, the scan line is connected with grid 8, for scanning signal to be transferred into grid 8.
In the present invention, the pixel electrode is connected with drain electrode 6b, according to scanning signal, for the transmission of control data signal
To pixel electrode.
In the present invention, the reflector layer I is arranged on the outer surface relative with the accumulation horizon II of the transparent substrates 2
On.
In the present invention, the polysilicon in the accumulation horizon II is covered in orthographic projections of the reflector layer I in transparent substrates 2
Layer 5.Specifically, orthographic projections of the reflector layer I in transparent substrates 2 is can prevent polysilicon at backlight array substrate raceway groove
For the purpose of the influence of layer.
In the present invention, reflector layer I can be single or multiple lift, and it is anti-that such as reflector layer includes the first reflector layer 1a and second
Photosphere 1b, or reflector layer only contain the first reflector layer 1a.Preferably, reflector layer I is reflective including the first reflector layer 1a and second
Layer 1b.
In the present invention, the material of reflector layer by can it is reflective for the purpose of, without special restriction.In situations where it is preferred,
The reflector layer is aluminium lamination, aluminium lamination and indium tin oxide layer composite bed or silver layer and indium tin oxide layer composite bed.Indium tin oxide layer can
To protect aluminium lamination and/or silver layer.In situations where it is preferred, the reflector layer I is silver layer and indium tin oxide layer composite bed, such as：
First reflector layer 1a is silver layer, and the second reflector layer 1b is indium tin oxide layer.
In the present invention, reflector layer I thickness by can realize it is reflective for the purpose of, be not particularly limited.
Second aspect of the present invention provides the preparation method of above-mentioned array base palte, and this method comprises the following steps：
(1) formation reflector layer I in accumulation horizon II transparent substrates 2 is formed with a side external surface, the reflector layer I exists
On the outer surface relative with the accumulation horizon of the transparent substrates；
(2) pattern is formed on the reflector layer I, orthographic projection masking of the pattern in the transparent substrates 2 is described
Polysilicon layer 5 in accumulation horizon II.
In the present invention, in step (1), the method for forming reflector layer I is physically splash plating method.Embodiment
It can be but be not limited to：Silver is formed by physically splash plating on the outer surface relative with the accumulation horizon of the transparent substrates
Layer, then indium tin oxide layer formed by physically splash plating on the surface of silver layer.The physically splash plating is the conventional method in this area,
This is repeated no more.
In the present invention, in step (2), the process for forming pattern includes：The reflector layer is subjected to Huang successively
Light making technology and etching technics.
The gold-tinted making technology is the conventional coating in this area, is exposed, the technique such as development.Photoresist is coated on reflective
Layer surface, the mask plate of pattern, is then exposed and develops to reflector layer needed for placing.The gold-tinted making technology is ability
Domain conventional method, is not particularly limited, and will not be repeated here.
The etching technics is the conventional Wet-type etching or dry-etching in this area.Carrying out completing gold-tinted making technology
Reflective layer surface perform etching, so as to form pattern on the reflector layer I.Preferably, reflector layer I is silver layer and indium oxide
During tin layers composite bed, Wet-type etching mode, the mixed liquor of etching decoction selection phosphoric acid, nitric acid and acetic acid are selected.
In the present invention, depending on forming reflector layer I thickness as the case may be.
Third aspect present invention provides a kind of liquid crystal display panel, wherein, the liquid crystal display panel includes：Color film base
Plate, array base palte, and it is arranged on the liquid crystal layer in the middle of the color membrane substrates and the array base palte；Wherein, the array base
Plate is above-mentioned array base palte.
Fourth aspect present invention provide a kind of preparation method of liquid crystal display panel, this method include by color membrane substrates,
Above-mentioned array base palte, and the liquid crystal layer being arranged in the middle of the color membrane substrates and the array base palte are assembled, wherein,
The accumulation horizon of the array base palte is between the transparent substrates of the liquid crystal layer and the array base palte.
Liquid crystal display panel prepared by this method, after array base palte configured reflector layer I, then carry out liquid crystal layer and
The assembling of color membrane substrates, may destroy reflector layer I., can be by one where reflector layer I and reflector layer in order to avoid destruction reflector layer
The surface of the transparent substrates 2 of side forms diaphragm, again removes protective layer after the assembling of liquid crystal layer and color membrane substrates is completed, but
It is that the method is not easy enough, adds additional process.
Therefore, fifth aspect present invention additionally provides a kind of preparation method of liquid crystal display panel, this method includes following
Step：
(1) color membrane substrates, no-reflection layer array base palte and liquid crystal layer are assembled, wherein, the no-reflection layer array
Substrate includes transparent substrates 2, the accumulation horizon II set in the side of the transparent substrates 2, and be connected with the accumulation horizon II
At least one data wire, scan line and pixel electrode；
(2) reflector layer I is formed in the transparent substrates 2 of the array base palte, the reflector layer I is in the transparent substrates 2
The outer surface relative with the accumulation horizon II on；
(3) pattern is formed on the reflector layer I, orthographic projection masking of the pattern in the transparent substrates 2 is described
Polysilicon layer 5 in accumulation horizon II.
In the present invention, in step (1), the method for the assembling is molding process.Molding process is that this area is conventional
Method, will not be repeated here.
In the present invention, in step (2) and step (3), the method and preceding method for forming reflector layer and pattern
It is identical.
By the method described in fifth aspect present invention, reflector layer I can be both protected, but it is simple and easy to do.
Sixth aspect present invention provides a kind of LCDs, wherein, the LCDs includes above-mentioned array base palte.
Specifically, the LCDs includes backlight module apparatus for lighting up, master board, the back of the body stacked gradually from top to bottom
Plate, backlight, glue frame, diffuser plate, diffusion sheet, driving IC and printed circuit board (PCB), vertical polaroid, above-mentioned array base palte, liquid
Crystalline substance, color membrane substrates, horizontal polaroid and front frame etc..
Seventh aspect present invention provides above-mentioned LCDs as the application of the display screen of display device.
In the present invention, the application can be mobile phone, computer and TV etc..
The present invention will be described in detail by way of examples below.
Embodiment 1-5 is used for the method for illustrating the present invention.
Embodiment 1
(1) no-reflection layer array base palte is prepared
Cushion 3, dielectric layer 4 are sequentially formed by chemical vapor deposition in transparent substrates 2, on the surface of dielectric layer 4
Amorphous silicon layer is formed, amorphous silicon layer is converted into by polysilicon layer 5 using excitation state laser annealing, then pass through gold-tinted and etching technics
Partial polysilicon layer is removed, in the disposed thereon of polysilicon layer 5 the first insulating barrier 7 of formation, is deposited simultaneously on the surface of the first insulating barrier 7
Etching forms grid 8, using grid 8 as physical mask plate, and ion implanting is carried out to polysilicon layer 5 using ion injection method,
Form source electrode 6a and drain electrode 6b.The insulation of dielectric layer 9 and second is sequentially depositing on the surface of grid 8 and the first insulating barrier of part 7 again
Layer 10, penetratingly forms through respectively by photoetching and etch process in the second insulating barrier 10, the insulating barrier 7 of dielectric layer 9 and first
Source electrode 6a and drain electrode 6b contact hole, finally the disposed thereon of the second insulating barrier 10 and pass through photoetching and etch process formation electric leakage
Pole 11 and source electrode 12.The accumulation horizon II is connected with least one data wire, scan line and pixel electrode and (not shown in figure
Show).
Preferably, the material of the insulating barrier 10 of cushion 3 and second is silicon nitride, the first insulating barrier 7, dielectric layer 9 and medium
The material of layer 4 is silica.
(2) liquid crystal display panel is assembled
By molding process, no-reflection layer array base palte that color membrane substrates, step (1) are obtained and the color film is arranged on
Liquid crystal layer in the middle of substrate and the array base palte is assembled into liquid crystal display panel, wherein, the no-reflection layer array base palte bag
Transparent substrates 2 are included, the accumulation horizon II set in the side of the transparent substrates 2, and at least one be connected with the accumulation horizon II
Individual data wire, scan line and pixel electrode.
The molding process is the conventional method in this area, be will not be repeated here.
(3) reflector layer is formed
It is formed with a side external surface in accumulation horizon II transparent substrates 2 by the first reflector layer 1a of physically splash plating formation
Silver layer, then on the surface of silver layer by physically splash plating the second reflector layer 1b indium tin oxide layers of formation, 1a and 1b composite beds constitute anti-
Photosphere I, the reflector layer I is on the outer surface relative with the accumulation horizon of the transparent substrates.
Gold-tinted making technology is carried out on the reflector layer I, photoresist is coated on reflective layer surface, is placed and polysilicon
5 orthographic projection in transparent substrates 2 of layer has the mask plate of identical patterns, and then reflector layer is exposed and developed, then
Wet etch process is carried out, the mixed liquor of etching decoction selection phosphoric acid, nitric acid and acetic acid forms pattern on the reflector layer I,
The polysilicon layer 5 of II in the accumulation horizon is covered in orthographic projection of the pattern in the transparent substrates 2.
(4) LCDs is formed
Backlight module apparatus for lighting up, master board, backboard, backlight, glue frame, diffuser plate, diffusion are stacked gradually from top to bottom
Piece, the liquid crystal display panels with reflector layer that are obtained with printed circuit board (PCB), vertical polaroid, step (3) of driving IC, level are inclined
Mating plate and front frame.
Using LCDs as the display screen of TV, the picture of view screen imaging, picture is clear, without blushing,
Without patch, uniform in color.
Embodiment 2
According to the method for embodiment 1, unlike, the first reflector layer 1a is aluminium lamination, and the second reflector layer 1b is tin indium oxide
Layer.
According to the method formation LCDs of embodiment 1.
Using LCDs as the display screen of TV, the picture of view screen imaging, picture is clear, without blushing,
Without patch, achromatization non-uniform phenomenon.
Embodiment 3
According to the method for embodiment 1, unlike, reflector layer I is only aluminium lamination.
According to the method formation LCDs of embodiment 1.
Using LCDs as the display screen of TV, the picture of view screen imaging, picture is clear, without blushing,
It is uneven without patch, achromatization.
Embodiment 4
(1) array base palte for having reflector layer of the present invention is prepared
Cushion 3, dielectric layer 4 are sequentially formed by chemical vapor deposition in transparent substrates 2, on the surface of dielectric layer 4
Amorphous silicon layer is formed, amorphous silicon layer is converted into by polysilicon layer 5 using excitation state laser annealing, then pass through gold-tinted and etching technics
Partial polysilicon layer is removed, in the disposed thereon of polysilicon layer 5 the first insulating barrier 7 of formation, is deposited simultaneously on the surface of the first insulating barrier 7
Etching forms grid 8, using grid 8 as physical mask plate, and ion implanting is carried out to polysilicon layer 5 using ion injection method,
Form source electrode 6a and drain electrode 6b.The insulation of dielectric layer 9 and second is sequentially depositing on the surface of grid 8 and the first insulating barrier of part 7 again
Layer 10, penetratingly forms through respectively by photoetching and etch process in the second insulating barrier 10, the insulating barrier 7 of dielectric layer 9 and first
Source electrode 6a and drain electrode 6b contact hole, finally the disposed thereon of the second insulating barrier 10 and pass through photoetching and etch process formation electric leakage
Pole 11 and source electrode 12.The accumulation horizon II is connected with least one data wire, scan line and pixel electrode.
Preferably, the material of the insulating barrier 10 of cushion 3 and second is silicon nitride, the first insulating barrier 7, dielectric layer 9 and medium
The material of layer 4 is silica.
It is formed with a side external surface in accumulation horizon II transparent substrates 2 by the first reflector layer 1a of physically splash plating formation
Silver layer, then on the surface of silver layer by physically splash plating the second reflector layer 1b indium tin oxide layers of formation, 1a and 1b composite beds constitute anti-
Photosphere I, the reflector layer I is on the outer surface relative with the accumulation horizon of the transparent substrates.
Gold-tinted making technology is carried out on the reflector layer I, photoresist is coated on reflective layer surface, is placed and polysilicon
5 orthographic projection in transparent substrates 2 of layer has the mask plate of identical patterns, and then reflector layer is exposed and developed, then
Wet etch process is carried out, the mixed liquor of etching decoction selection phosphoric acid, nitric acid and acetic acid forms pattern on the reflector layer I,
The polysilicon layer 5 of II in the accumulation horizon is covered in orthographic projection of the pattern in the transparent substrates 2.
(2) it is armor coated in reflective layer surface
On reflector layer I surface, photoresist is coated by coating machine and (is purchased from Suzhou Rui Hong companies, model RZJ-
306 positive photoresist).
(3) liquid crystal display panel is assembled
By molding process, the array base palte with reflector layer and protective layer that color membrane substrates, step (2) are obtained, with
And the liquid crystal layer being arranged in the middle of the color membrane substrates and the array base palte is assembled, and is assembled into liquid crystal display panel.
The molding process is the conventional method in this area, be will not be repeated here.
(4) protective layer of reflective layer surface is removed
The protective layer on reflector layer I surfaces is subjected to sprinkling and peels off decoction (purchased from Suzhou Rui Hong companies, model RBL-3316
Stripper) remove surface protection photoresist.
(5) LCDs is formed
Backlight module apparatus for lighting up, master board, backboard, backlight, glue frame, diffuser plate, diffusion are stacked gradually from top to bottom
Liquid crystal display panel, horizontal polaroid and front frame that piece, driving IC are obtained with printed circuit board (PCB), vertical polaroid, step (4).
Using LCDs as the display screen of TV, the picture of view screen imaging, picture is clear, without blushing,
Without patch, uniform in color.
Embodiment 5
According to the method for embodiment 4, unlike, without step (2) and (4).
According to the method formation LCDs of embodiment 4.
Using LCDs as the display screen of mobile phone, the picture of view screen imaging, picture is clear, without blushing,
Without patch, uniform in color.
Comparative example 1
(1) array base palte is prepared
According to the method for implementing 1, unlike, reflector layer is not formed, light shield layer is formed, as shown in Fig. 2 in transparent substrates
Part surface carry out heavy film formation light shield layer 20, and pass through gold-tinted and etching method so that light shield layer 20 is in transparent substrates 2
Orthographic projection covers orthographic projection of the polysilicon layer 5 in transparent substrates 2, then sequentially forms cushion by chemical vapor deposition again
3rd, dielectric layer 4, form amorphous silicon layer on the surface of dielectric layer 4, amorphous silicon layer are converted into polycrystalline using excitation state laser annealing
Silicon layer 5, then partial polysilicon layer is removed by gold-tinted and etching technics, in the disposed thereon of polysilicon layer 5 the first insulating barrier of formation
7, deposit and etch to form grid 8 on the surface of the first insulating barrier 7, using grid 8 as physical mask plate, using ion implanting side
Method carries out ion implanting to polysilicon layer 5, forms source electrode 6a and drain electrode 6b.Again on the surface of grid 8 and the first insulating barrier of part 7
The insulating barrier 10 of dielectric layer 9 and second is sequentially depositing, by photoetching and etch process in the second insulating barrier 10, dielectric layer 9 and first
Insulating barrier 7 penetratingly forms through source electrode 6a and drain electrode 6b contact hole respectively, finally disposed thereon in the second insulating barrier 10 simultaneously
Pass through photoetching and etch process formation drain electrode 11 and source electrode 12.By the accumulation horizon II and at least one data wire, scanning
Line and pixel electrode connection.
(2) liquid crystal display panel is assembled
According to the method for embodiment 1.
(3) LCDs is formed
According to the method for embodiment 1, unlike, use the liquid crystal display panel with light shield layer 20.
Using LCDs as the display screen of TV, the picture of view screen imaging, picture has blushing, has spot
Block, display effect be not good.
By comparative example 1-5 and comparative example 1 as can be seen that can be made using the reflector layer of the present invention in polysilicon layer
Polysilicon have crystallization uniform, no patch, the advantage of achromatization non-uniform phenomenon.
The preferred embodiment of the present invention described in detail above, still, the present invention is not limited thereto.In the skill of the present invention
In art concept, technical scheme can be carried out a variety of simple variants, including each technical characteristic with it is any its
Its suitable method is combined, and these simple variants and combination should equally be considered as content disclosed in this invention, belong to
Protection scope of the present invention.
Claims (12)
1. a kind of array base palte, including transparent substrates, the accumulation horizon set in the side of the transparent substrates, and with the accumulation
Layer connection at least one data wire, scan line and pixel electrode, it is characterised in that the transparent substrates opposite side extremely
Small part sets reflector layer on outer surface.
2. array base palte according to claim 1, it is characterised in that the reflector layer be arranged on the transparent substrates with
On the relative outer surface of the accumulation horizon.
3. array base palte according to claim 2, it is characterised in that the positive throwing of the reflector layer on the transparent substrate
Shadow covers the polysilicon layer in the accumulation horizon.
4. the array base palte according to any one in claim 1-3, it is characterised in that the reflector layer is aluminium lamination, aluminium
Layer and indium tin oxide layer composite bed or silver layer and indium tin oxide layer composite bed；
Preferably, the reflector layer is silver layer and indium tin oxide layer composite bed.
5. the preparation method of the array base palte in claim 1-4 described in any one, this method comprises the following steps：
(1) it is formed with a side external surface in the transparent substrates of accumulation horizon and forms reflector layer, the reflector layer is described transparent
On the outer surface relative with the accumulation horizon of substrate；
(2) pattern is formed on the reflector layer, the accumulation horizon is covered in the orthographic projection of the pattern on the transparent substrate
Interior polysilicon layer.
6. method according to claim 5, it is characterised in that in step (1), the method for forming reflector layer is thing
Manage sputtering method.
7. method according to claim 5, it is characterised in that in step (2), the process for forming pattern includes：
The reflector layer is subjected to gold-tinted making technology and etching technics successively.
8. a kind of liquid crystal display panel, including：Color membrane substrates, array base palte, and it is arranged on the color membrane substrates and the battle array
Liquid crystal layer in the middle of row substrate；Wherein, the array base palte is the array base palte described in any one in claim 1-4.
9. a kind of preparation method of liquid crystal display panel, this method is included any one institute in color membrane substrates, claim 1-4
The array base palte stated, and the liquid crystal layer being arranged in the middle of the color membrane substrates and the array base palte are assembled, wherein, institute
The accumulation horizon of array base palte is stated between the transparent substrates of the liquid crystal layer and the array base palte.
10. a kind of preparation method of liquid crystal display panel, this method comprises the following steps：
(1) color membrane substrates, no-reflection layer array base palte and liquid crystal layer are assembled, wherein, the no-reflection layer array base palte
Including transparent substrates, the accumulation horizon set in the side of the transparent substrates, and at least one number being connected with the accumulation horizon
According to line, scan line and pixel electrode；
(2) reflector layer is formed on the transparent substrate, and the reflector layer is relative with the accumulation horizon in the transparent substrates
Outer surface on；
(3) pattern is formed on the reflector layer, the accumulation horizon is covered in the orthographic projection of the pattern on the transparent substrate
Interior polysilicon layer.
11. a kind of LCDs, the LCDs includes the array base palte described in any one in claim 1-4.
12. LCDs described in claim 11 is used as the application of the display screen of display device.
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| CN201710607247.3A CN107219671A (en) | 2017-07-24 | 2017-07-24 | Array base palte and preparation method thereof, liquid crystal display panel and preparation method thereof, LCDs and application |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710607247.3A CN107219671A (en) | 2017-07-24 | 2017-07-24 | Array base palte and preparation method thereof, liquid crystal display panel and preparation method thereof, LCDs and application |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171602A (en) * | 2021-12-07 | 2022-03-11 | Tcl华星光电技术有限公司 | TFT substrate and preparation method thereof, display panel and display device |
| WO2022174611A1 (en) * | 2021-02-19 | 2022-08-25 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| CN115857215A (en) * | 2022-12-14 | 2023-03-28 | 维沃移动通信有限公司 | Display screen and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030189205A1 (en) * | 2001-08-28 | 2003-10-09 | Kazuhiko Horikoshi | Method of manufacturing thin film transistor |
| CN102768424A (en) * | 2012-07-02 | 2012-11-07 | 京东方科技集团股份有限公司 | Double-viewing angle display panel and manufacturing method thereof |
| CN103760716A (en) * | 2014-01-22 | 2014-04-30 | 北京京东方显示技术有限公司 | Array substrate and display device |
| CN105093659A (en) * | 2015-09-07 | 2015-11-25 | 武汉华星光电技术有限公司 | Liquid crystal display panel and manufacturing method thereof |
-
2017
- 2017-07-24 CN CN201710607247.3A patent/CN107219671A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030189205A1 (en) * | 2001-08-28 | 2003-10-09 | Kazuhiko Horikoshi | Method of manufacturing thin film transistor |
| CN102768424A (en) * | 2012-07-02 | 2012-11-07 | 京东方科技集团股份有限公司 | Double-viewing angle display panel and manufacturing method thereof |
| CN103760716A (en) * | 2014-01-22 | 2014-04-30 | 北京京东方显示技术有限公司 | Array substrate and display device |
| CN105093659A (en) * | 2015-09-07 | 2015-11-25 | 武汉华星光电技术有限公司 | Liquid crystal display panel and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022174611A1 (en) * | 2021-02-19 | 2022-08-25 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| CN114171602A (en) * | 2021-12-07 | 2022-03-11 | Tcl华星光电技术有限公司 | TFT substrate and preparation method thereof, display panel and display device |
| CN114171602B (en) * | 2021-12-07 | 2024-08-23 | Tcl华星光电技术有限公司 | TFT substrate, preparation method thereof, display panel and display device |
| CN115857215A (en) * | 2022-12-14 | 2023-03-28 | 维沃移动通信有限公司 | Display screen and electronic equipment |
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Application publication date: 20170929 |